Abstract: A thermoelectric material includes a filled skutterudite crystal structure having the formula GyM4X12, where i) G includes at least two rare earth elements and an alkaline earth element, ii) M is cobalt, rhodium, or iridium, and iii) X is antimony, phosphorus, or arsenic. The subscript “y” refers to a crystal structure filling fraction ranging from about 0.001 to about 0.5.

Abstract: Disclosed is a thermoelectric material comprising a main phase which is represented by the following composition formula and having an MgAgAs-type crystalline structure: (Ta1Zrb1Hfc1)xCoySb100-x-y wherein 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x ?35, and 30?y?35.

Abstract: A thermoelectric conversion material is provided with stable thermoelectric conversion properties such as power factor in air at high temperature. The thermoelectric conversion material contains a mixed metal oxide comprising M1, M2A and M2B as metal elements at a molar ratio of M1:M2A:M2B of 2:1:1 and has a perovskite crystal structure, wherein M1 represents at least one M1A selected from the group consisting of La, Y and lanthanoid elements, or a combination of M1A and at least one M1B selected from among alkaline earth metal elements, M2A represents at least one selected from the group consisting of metal elements each of which can have an atomic valence of 2, M2B represents at least one selected from the group consisting of metal elements each of which can have an atomic valence of 4, M1, M2A and M2B are different from one another, and each of M2A and M2B may contain a doping element.

Abstract: The present invention provides a thermoelectric element in which a thin film of p-type thermoelectric material and a thin film of n-type thermoelectric material, which are formed on an electrically insulating substrate, are electrically connected, in which the p-type thermoelectric material and the n-type thermoelectric material are selected from specific complex oxides with a positive Seebeck coefficient and specific complex oxides with a negative Seebeck coefficient, respectively. The present invention also provides a thermoelectric module using the thermoelectric element(s) and a thermoelectric conversion method. In the thermoelectric element of the present invention, since a p-type thermoelectric material and an n-type thermoelectric material are formed into a thin film on an electrically insulating substrate, the thermoelectric element of the invention can be formed on substrates having various shapes, thereby providing thermoelectric elements having various shapes.

Abstract: A thermoelectric conversion material wherein at least a part of the insulating material contained in the thermoelectric conversion material has a particle size not larger than a mean free path of the phonons in the insulating material or wherein a dispersion gap of the insulating material is not larger than a mean free path of the phonons in the thermoelectric conversion material, and a method of producing the thermoelectric conversion material comprising the steps of forming composite nano particles by reducing and precipitating starting particles of a thermoelectric conversion material on the nano particles constituted by an insulating material, followed by a heat treatment to coat the nano particles with the thermoelectric conversion material; and packing and sintering the composite nano particles.

Abstract: A thermoelectric generator has a top plate disposed in spaced relation above a bottom plate. A series of foil segments are electrically and mechanically connected end-to-end to generate a foil assembly that is spirally wound and in thermal contact with the bottom and top plates. Each foil segment comprises a substrate having a series of spaced alternating n-type and p-type thermoelectric legs disposed in parallel arrangement on the front substrate surface. Each of the n-type and p-type legs is formed of a bismuth telluride-based thermoelectric material having a thickness of about 10-100 microns, a width of about 10-100 microns and a length of about 100-500 microns. The alternating n-type and p-type thermoelectric legs are electrically connected in series and thermally connected in parallel such that a temperature differential between the bottom and top plates results in the generation of power.

Abstract: One exemplary embodiment includes a materials and devices comprising a multi-element filled skutterudite type body-centered cubic crystal structure including GyM4X12, wherein G is at least two elements. The material may include n-type or p-type doping.

Abstract: A p-type oxide thermoelectric material which has a high output factor and a low environmental load. The thermoelectric material is composed of an oxide represented by the compositional formula (Ni1-xCux) (Mn2-yCuy)O4 and having a structure in which Ni elements occupying the Ni sites and/or Mn elements occupying the Mn sites are partially replaced by Cu elements, wherein 0?x?0.7, 0?y?0.7, and 0.4?x+y. In such a thermoelectric material, preferably, 0.2?x?0.5 and 0.2?y?0.5, and preferably, the output factor at 50° C. to 800° C. is 10×10?6 W/mK2 or more.

Abstract: A thermoelectric material and a method of fabricating a thermoelectric material are provided. The thermoelectric material includes a compound having an elemental formula of A1?xB1+yC2+z and having a coefficient of thermal expansion greater than 20 parts-per-million per degree Celsius in at least one direction at one or more operating temperatures. The A component of the compound includes at least one element selected from the group consisting of: at least one Group Ia element and at least one Group Ib element, the B component of the compound includes at least one element selected from the group consisting of: at least one Group V element and at least one Group VIII element, and the C component of the compound includes at least one Group VI element. In addition, x is between ?0.2 and 0.3, y is between ?0.2 and 0.4, and z is between ?0.2 and 0.8.

Abstract: A light emitting diode (LED) package structure including a first substrate, an LED chip, a second substrate, and a thermoelectric cooling device is provided. The first substrate has a first surface and a corresponding second surface. The LED chip suitable for emitting a light is arranged on the first surface of the first substrate, and is electrically connected to the first substrate. The second substrate is below the first substrate, and has a third surface and a corresponding fourth surface. The third surface faces the second surface. The thermoelectric cooling device is arranged between the second surface of the first substrate and the third surface of the second substrate for conducting heat generated by the LED chip during operation.

Abstract: The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

Abstract: The invention relates to an oxide material of general formula (I) A2?x?yA?XA?yM1?z M?Z04+?, wherein A and A? are independently a metal cation of a group formed by lanthanides and/or alkalis and/or alkaline earths, A? is a cationic gap, i.e. a cation vacancy A and/or A?, M and M? are independently a metal of a group formed by transition metals such as 0<y<0.30, preferably 0<y=0.20; 0<?<0.25, preferably 0<?<0.10; 0=x=1; and 0=z=1. An air electrode containing said material and an electric power producing device in the form of a fuel cell provided with at least one electrochemical cell comprising said electrode are also disclosed.

Abstract: A solid-state energy converter with a semiconductor or semiconductor-metal implementation is provided for conversion of thermal energy to electric energy, or electric energy to refrigeration. In n-type heat-to-electricity embodiments, a highly doped n* emitter region made of a metal or semiconductor injects carriers into an n-type gap region. A p-type layer is positioned between the emitter region and gap region, allowing for discontinuity of corresponding Fermi-levels and forming a potential barrier to sort electrons by energy. Additional p-type layers can optionally be formed on the collector side of the converter. One type of these layers with higher carrier concentration (p*) serves as a blocking layer at the cold side of the converter, and another layer (p**) with carrier concentration close to the gap reduces a thermoelectric back flow component. Ohmic contacts on both sides of the device close the electrical circuit through an external load to convert heat to electricity.

Abstract: A thermoelectric conversion material is provided that has not only a higher thermoelectric performance as compared to conventional ones but also semiconducting temperature dependence, i.e. properties that the electrical resistivity decreases with an increase in temperature. The thermoelectric conversion material contains a substance having a layered bronze structure represented by a formula (Bi2A2O4)0.5(Co1-xRhx)O2, where A is an alkaline-earth metal element and x is a numerical value of 0.4 to 0.8. The thermoelectric conversion material of the present invention exhibits good thermoelectric properties over a wide temperature range.

Abstract: New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

Abstract: The present invention provides a novel complex oxide capable of achieving high performance as a p-type thermoelectric material. The complex oxide comprises a layer-structured oxide represented by the formula BiaPbbM1cCOdM2eOf wherein M1 is one or more elements selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Ca, Sr, Ba, Al, Y, and lanthanoids; M2 is one or more elements selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Mo, W, Nb, Ta, and Ag; 1.8?a?2.5; 0?b?0.5; 1.8?c?2.5; 1.6?d?2.5; 0?e?0.5; and 8?f?10; and at least one interlayer component selected from the group consisting of F, Cl, Br, I, HgF2, HgCl2, HgBr2, HgI2, TlF3, TlCl3, TlBr3, TlI3, BiF3, BiCl3, BiBr3, BiI3, PbF2, PbCl2, PbBr2, and PbI2. The interlayer component being present between layers of the layer-structured oxide.

Abstract: Thermoelectric materials, devices, and systems are presented. One embodiment is a composite material comprising a matrix comprising a thermoelectric material; and an electrically conducting phase disposed within the matrix. The electrically conducting phase has a lower electrical resistivity than the thermoelectric material, and it forms a continuous electrically conducting path through the matrix from a first surface of the material to a second surface of the material. Another embodiment is a device, comprising a thermoelectric element. This element is made of the above composite material. A further embodiment is a thermoelectric system, made of a heat source, a heat sink, and the thermoelectric device disposed in thermal communication with the heat source and heat sink. The system may be configured for power generation or for thermal management.

Abstract: A thermocouple system is disclosed. The thermocouple system includes a thermocouple having a positive lead and a negative lead. A positive wire is connected at a first end to the positive lead at a first junction and at a second end to a second junction. A negative wire is connected at a first end to the negative lead at a third junction and at second end to a fourth junction. The second and fourth junctions constitute a reference junction. At least one of a thermal conductivity and a gauge of at least one of the positive wire and the negative wire are selected to govern the respective flows of heat from the first junction toward the reference junction and the flow of heat from the third junction toward the reference junction to be of such quantities that the difference in the heat flows is less than a predetermined amount.

Abstract: A nitrogen-containing thermoelectric material, which has an element composition represented by: AlzGayInxMuRvOsNt??(A) or AlzGayInxMuRvDwNm??(B) (wherein M represents a transition element; R represents a rare earth element; D represents at least one element selected from elements of the Group IV or II; 0?z?0.7, 0?y?0.7, 0.2?x?1.0, 0?u?0.7, 0?v?0.05, 0.9?s+t?1.7, 0.4?s?1.2, 0?w?0.2, and 0.9?m?1.1; and x+y+z=1), and has an absolute value of a Seebeck coefficient of 40 ?V/K or more at a temperature of 100° C. or more. These thermoelectric materials comprise elements having low toxicity, are excellent in a heat resistance, a chemical resistance and the like, and have a high thermoelectric transforming efficiency.

Abstract: The present invention is related to a temperature differential panel with conductors made of different metals or alloys. With thermoelectric couple effects the panel and device can generate power by temperature difference. The temperature differential panel comprises a sheet-like insulation (3); and a current power generation device (2) consists of a plurality of first conductors (20) and second conductors (21) made of different metals or alloys, the first conductors (20) and second conductors (21) are disposed to a top and a bottom of the sheet-like insulation (3) respectively; each of both ends of the first conductors (20) are connected to each of both ends of the second conductors (21) respectively to form electric charging points (22a, 22b).

Abstract: The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Abstract: The present invention relates to a process for the preparation of thermoelectric compositions of the formula InxCO4Sb12 (0<x<1), with a figure of merit greater than 1.0 and a composition made by that process.

Abstract: The present disclosure describes a improved composite thermoelectric and an accompanying method. In accordance with one embodiment of the invention, the thermoelectric is constructed in layers from a perform of a stack of layers, and then treated or otherwise modified in order to create a thinner thermoelectric structure.

Abstract: The present invention provides an electric power generation method using a thermoelectric power generation element, a thermoelectric power generation element, and a thermoelectric power generation device, each of which has high thermoelectric power generation performance and can be used for more applications. The thermoelectric power generation element includes a first electrode and a second electrode that are disposed to oppose each other, and a laminate that is interposed between the first and second electrodes and that is electrically connected to both the first and second electrodes, where the laminate has a structure in which SrB6 layers and metal layers containing Cu, Ag, Au, or Al are laminated alternately, a thickness ratio between the metal layer and the SrB6 layer is in a range of metal layer: SrB6 layer=20:1 to 2.

Abstract: A thermoelectric conversion device of the present invention includes a first electrode, a second electrode, and a layered oxide arranged between the first electrode and the second electrode. The first electrode, the layered oxide, and the second electrode are arranged in this order so that a multilayer is formed. The layered oxide is formed of electric conductive layers and electric insulating layers being alternately arranged. The C axis of the layered oxide is perpendicular to the interface between the first electrode and the layered oxide. The area of the second electrode is smaller than that of the first electrode.

Abstract: The present invention provides an electric power generation method using a thermoelectric power generation element, a thermoelectric power generation element, and a thermoelectric power generation device, each of which has high thermoelectric power generation performance and can be used for more applications. The thermoelectric power generation element includes a first electrode and a second electrode that are disposed to oppose each other, and a laminate that is interposed between the first and second electrodes and that is electrically connected to both the first and second electrodes, where the laminate has a structure in which SrB6 layers and metal layers containing Cu, Ag, Au, or Al are laminated alternately, a thickness ratio between the metal layer and the SrB6 layer is in a range of metal layer: SrB6 layer=20:1 to 2.

Abstract: A thermoelectric converter including p-type semiconductors and n-type semiconductors alternately provided in corresponding first and second through holes, respectively, in a ceramic honeycomb. The first and second through holes have different cross-sectional shapes and are alternately arranged. The semiconductors have respective first and second ends thereof successively connected to different ones of the semiconductors on first and second sides, respectively, of the corresponding through holes.

Abstract: To provide a thermoelectric conversion material having semiconductor-like temperature dependence, that is, the property that electric resistivity decreases with increasing temperature, and having high thermoelectric performance. The present invention is a thermoelectric conversion material including a semiconductor phase having a layered bronze structure expressed by a formula of Ay(Co1-xRhx)O2, where A is an alkaline-earth metal, y is 0.2 to 0.8, and x is 0.4 to 0.6.

Abstract: The present invention is directed to an electrical device that comprises a first and a second fiber having a core of thermoelectric material embedded in an electrically insulating material, and a conductor. The first fiber is doped with a first type of impurity, while the second fiber is doped with a second type of impurity. A conductor is coupled to the first fiber to induce current flow between the first and second fibers.

Abstract: This invention provides novel thermoelectric compounds comprising: a) atomic percent Ytterbium b) between 50 and 74.999 atomic percent Aluminum c) between 0.001 and 25 atomic percent Manganese and a process for their preparation.

Abstract: It is often the case that a substrate suitable for epitaxial growth does not match a substrate desirable for the use in functional elements such as thermoelectric conversion elements or the like. The present invention makes it possible to separate a predetermined layered structure formed on a substrate therefrom through an action of water vapor. A method of manufacturing a crystalline film of the present invention includes the steps of: epitaxially growing on a substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate; contacting water vapor supplied from a water vapor source with the layered structure in a chamber; and separating the layered structure that has been contacted with the water vapor from the substrate to obtain the crystalline film. The layered structure has a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.

Abstract: A super-lattice thermoelectric device. The device is comprised of p-legs and n-legs, each leg being comprised of a large number of very thin alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of Si and SiC. The p-legs are comprised of alternating layers of B4C and B9C. In preferred embodiments the layers are about 100 angstroms thick. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10×10 egg crate type module about 6 cm×6 cm×0.76 cm designed to produce 70 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module has 98 active thermoelectric legs, with each leg having more than 3 million super-lattice layers.

Abstract: A thermoelectric structure and device including at least first and second material systems having different lattice constants and interposed in contact with each other, and a physical interface at which the at least first and second material systems are joined with a lattice mismatch and at which structural integrity of the first and second material systems is substantially maintained. The at least first and second material systems have a charge carrier transport direction normal to the physical interface and preferably periodically arranged in a superlattice structure.

Abstract: The electric motor is equipped with an electronic control, for example in the form of a frequency converter (2) and comprises at least one Seebeck element (6) whose one side is connected to the motor (1) in a heat-conducting manner and whose other side is in heat-conducting connection with a cooling medium. The electrical output power of the Seebeck element (6) is led to the electronic control (2) of the motor (1).

Abstract: The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide.

Abstract: A thermoelectric material comprises two or more components, at least one of which is a thermoelectric material. The first component is nanostructured, for example as an electrically conducting nanostructured network, and can include nanowires, nanoparticles, or other nanostructures of the first component. The second component may comprise an electrical insulator, such as an inorganic oxide, other electrical insulator, other low thermal conductivity material, voids, air-filled gaps, and the like. Additional components may be included, for example to improve mechanical properties. Quantum size effects within the nanostructured first component can advantageously modify the thermoelectric properties of the first component. In other examples, the second component may be a thermoelectric material, and additional components may be included.

Abstract: The present invention provides a complex oxide having a composition represented by the formula La1?xMxNiO2.7?3.3 or (La1?xMx)2NiO3.6?4.4 (wherein M is at least one element selected from the group consisting of Na, K, Li, Zn, Pb, Ba, Ca, Al, Nd, Bi and Y, and 0.01?×?0.8), the complex oxide having a negative Seebeck coefficient at 100° C. or higher. This complex oxide is a novel material which exhibits excellent properties as an n-type thermoelectric material.

Abstract: The main object of the present invention is to provide thermoelectric conversion materials having a high thermoelectric conversion performance and excellent mass productivity. The thermoelectric conversion materials have a core-shell structure with a plurality of core parts and shell parts for covering the core parts. The plurality of core parts are independent of each other and the shell parts are provided continuously such that the shell part of one core part is continuous with the shell part of a different core part.

Abstract: Preferred electrode devices (10) including a substrate (11) and cathode (13) and anode material (12) coated thereon in discreet locations are described. The cathode materials desirably include multiple layers of thin metal films (14). Preferred cell devices including conductive elements and a solid state source of charged ions for migration into and through the conductive elements are also described.

Abstract: In an exhaust heat recovery system, electric power generation efficiency of a thermoelectric conversion element can be improved, and warming-up of a catalyst can be completed early, without using a complicated device. The exhaust heat recovery system according to the invention includes an exhaust pipe in which exhaust gas discharged from an internal combustion engine flows; a catalyst which purifies the exhaust gas; a heat recovery portion which is fitted to the exhaust pipe, and which recovers heat contained in the exhaust gas; a thermoelectric conversion element which generates electric power using thermoelectric conversion; and a heat pipe which connects the heat recovery portion to the thermoelectric conversion element, and which transfers the heat recovered in the heat recovery portion to the thermoelectric conversion element. An operation starting temperature of the heat pipe is set so as to be higher than an activation temperature of the catalyst.

Abstract: In devices used for the direct conversion of heat into electricity, or vice versa, known in the art as thermoelectric power generators, thermoelectric refrigerators and thermoelectric heat pumps, the efficiency of energy conversion and/or coefficient of performance have been considerably lower than those of conventional reciprocating or rotary, heat engines and/or vapor-compression systems, employing certain refrigerants. The energy conversion efficiency of power generating devices, for example, aside from the hot and cold junction temperatures, also depends on a parameter known in the art as the thermoelectric figure of merit Z=S2?/k, where S is the thermoelectric power, ? is the electrical conductivity and k is the thermal conductivity, of the material that constitutes the p-type, and/or n-type, thermoelements, or branches, of the said devices. In order to achieve a considerable increase in the energy conversion efficiency, a thermoelectric figure of merit of the order of 10?2 K?1, or more, is needed.

Abstract: A solid-state energy converter with a semiconductor or semiconductor-metal implementation is provided for conversion of thermal energy to electric energy, or electric energy to refrigeration. In n-type heat-to-electricity embodiments, a highly doped n* emitter region made of a metal or semiconductor injects carriers into an n-type gap region. A p-type layer is positioned between the emitter region and gap region, allowing for discontinuity of corresponding Fermi-levels and forming a potential barrier to sort electrons by energy. Additional p-type layers can optionally be formed on the collector side of the converter. One type of these layers with higher carrier concentration (p*) serves as a blocking layer at the cold side of the converter, and another layer (p**) with carrier concentration close to the gap reduces a thermoelectric back flow component. Ohmic contacts on both sides of the device close the electrical circuit through an external load to convert heat to electricity.

Abstract: A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density.

Abstract: An apparatus and system is presented for partially compensating the cold junction of a thermocouple system using low cost semi-compensated conductors of system components accommodating various thermocouple types. The thermocouple system, comprises a thermocouple portion comprising two thermocouple types, each type composed of two different thermoelectric materials joined to form a hot junction, a semi-compensation portion comprising two substantially similar conductor pairs, each composed of a different material, wherein one conductor of each pair is composed of a material different than the thermoelectric materials of the respective thermocouple type of the thermocouple portion.

Abstract: A thermoelectric component includes a first and a second element which, in the vicinity of a contact point, are in contact with each other, e.g., in the form of a thermal contact. Furthermore, in this connection, first element and/or second element have a ceramic material at least in one vicinity of contact point. The component may be suitable as a thermocouple for measuring temperature based on the Seebeck effect, or for use in a Peltier element as a thermoelectric heating element or cooling element based on the Peltier effect.

Abstract: A thermoelectric conversion material is formed of a polycrystal structure of crystal grains composed of a silicon-rich phase, and an added element-rich phase in which at least one type of added element is deposited at the grain boundary thereof, the result of which is an extremely large Seebeck coefficient and low thermal conductivity, allowing the thermoelectric conversion rate to be raised dramatically, and affording a silicon-based thermoelectric conversion material composed chiefly of silicon, which is an abundant resource, and which causes extremely low environmental pollution.

Abstract: The temperature measuring apparatus according to the present invention is of the high melting point metal carbide—carbon system material thermocouple type. According to this temperature measuring apparatus, it is possible to measure temperatures from a room temperature range to a high temperature range in excess of 2000° C. continuously, stably and with good accuracy. A constitution is preferable wherein a rod-like member formed of high melting point metal carbide is inserted into a pipe-like member with a bottom formed of carbon system material, and connected at the bottom to serve as a temperature measuring portion.

Abstract: Tunneling-effect converters of thermal energy to electricity with an emitter and a collector separated from each other by a distance that is comparable to atomic dimensions and where tunneling effect plays an important role in the charge movement from the emitter to the collector across the gap separating such emitter and collector. At least one of the emitter and collector structures includes a flexible structure. Tunneling-effect converters include devices that convert thermal energy to electrical energy and devices that provide refrigeration when electric power is supplied to such devices.

Abstract: The present invention relates to substituted boron or aluminum spiro compounds and their use in the electronic industry. The compounds of the invention are used as electron transport material, hole blocking material and/or as host material in organic electroluminescence and/or phosphorescence devices, as electron transport material in photocopiers, as electron acceptor or electron transport material in solar cells, as charge transport material in organic ICs (circuits) and in organic solid-state lasers or organic photodetectors.

Abstract: A thermoelectric generator comprising a plurality of semi-conductor elements of type n an type p alternatingly disposed and connected at the ends thereof to form a plurality of thermocouples on two opposite faces of the generator, said elements being thin polycrystalline semi-conductor ceramic layers deposited on a microporous support by means of serigraphy and fixed to said support by sintering.