Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

Abstract: A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.

Abstract: A HIT solar cell is provided, including a p-type crystalline silicon substrate having a light-receiving surface, a first intrinsic amorphous silicon thin-film layer formed on the light-receiving surface of the p-type crystalline silicon substrate, an n-type amorphous oxide layer formed on the first intrinsic amorphous silicon thin-film layer, and a first transparent conductive layer formed on the n-type amorphous oxide layer. In the HIT solar cell, the n-type amorphous oxide layer can be directly formed, without forming the first intrinsic amorphous silicon thin-film layer, and the n-type amorphous oxide layer can be divided into an n?-type amorphous oxide layer and an n+-type amorphous oxide layer that are formed sequentially.

Abstract: The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device.

Abstract: A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material is non-crystalline and has a thickness that is no greater than 50 nm.

Abstract: The Modular Multifunctional Solar Structure is an innovative design in the field of Renewable Energy. This system, the schematic diagram of which is shown in FIG. 2, will collect the energy from the sunlight by using lightweight rotary thermal or bivalent photovoltaic solar receivers (A), sandwiched between Support Columns (B) which house the technical services. Because of its modular concept, this structure allows: an easy and progressive assembly in places exposed to the sun, with negative angles of down to 90°; and a microprocessor controlled solar tracking device, with alternative fixed or manually adjustable settings. These features solve the traditional problems associated with solar energy collectors, which include: a fixed position which is confined to specific angles, or a vertical layout, both of which are inefficient in terms of energy recovery; large dimensions and heavyweight collectors, which may need ungainly support structures; and wasted space.

Abstract: Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer, a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the other conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, and a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type.

Abstract: Disclosed is a solar cell having a silicon monocrystal substrate surface with a textured structure and, near the surface of said substrate, a damage layer reflecting the slice processing history from the time of manufacture of the silicon monocrystal substrate. The damage layer near the surface of the silicon monocrystal substrate is derived from the slice processing history at the time of manufacture of the substrate and functions as a gettering site, contributing to a longer lifetime of the substrate minority carriers. Thanks to this effect, the solar cell characteristics are dramatically increased. Further, new damage need be inflicted, and no additional work is required because damage from the slicing is used.

Abstract: Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided to extend from another region of the substrate over onto the first amorphous semiconductor layer, a second amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of another conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type, and a third amorphous semiconductor layer placed between the second crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of

Abstract: Electrically conductive polymeric compositions adapted for use in forming electronic devices are disclosed. The compositions are thermally curable at temperatures less than about 250° C. Compositions are provided which may be solvent-free and so can be used in processing or manufacturing operations without solvent recovery concerns. The compositions utilize (i) fatty acid modified epoxy acrylate and/or methacrylate monomer(s) and/or oligomer(s), (ii) fatty acid modified polyester acrylate and/or methacrylate monomer(s) and/or oligomer(s), or combinations of (i) and (ii). Also described are electronic assemblies such as solar cells using the various compositions and related methods.

Abstract: Provided is a photoelectric conversion device characterized by a lattice-shaped current-collection metal electrode and a depressed portion provided in opening regions of a lattice structured by the lattice-shaped current collection electrode. This structure results in the reduction in the area of a heterojunction containing a highly-doped semiconductor layer, which decreases the influence of carrier recombination promoted by the high concentration of an impurity and leads to the improved electric characteristic of the photoelectric conversion device. The lattice shape of the current collection electrode also makes it possible to exclude the use of a light-transmitting current collection electrode and allows a protective insulating layer having a high light-transmitting property to be formed over the current collection electrode, which contributes to the reduction of the light absorption loss.

Abstract: Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

Abstract: A method for manufacturing a solar cell (100) includes the steps of removing a resist film (50) and removing a part of an n-type amorphous semiconductor layer (12n).

Abstract: This invention relates to cells and devices for harvesting light. Specifically the cell comprises at least one electrode which comprises graphene or modified graphene and layer of a transition metal dichalcogenide in a vertical heterostructure. The cell may be part of a light harvesting device. The invention also relates to materials and methods for making such cells and devices.

Abstract: According to one embodiment, an energy conversion device comprises a nuclear battery, a light source coupled to the nuclear battery and operable to receive electric energy from the nuclear battery and radiate electromagnetic energy, and a photocell operable to receive the radiated electromagnetic energy and convert the received electromagnetic energy into electric energy. The nuclear battery comprises a radioactive substance and a collector operable to receive particles emitted by the radioactive substance.

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2˜20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract: A solar cell includes: a crystalline silicon substrate of one conductivity type including a first principal surface, and a second principal surface provided on an opposite side from the first principal surface; a first amorphous silicon layer of the other conductivity type provided on the first principal surface side; a second amorphous silicon layer of the one conductivity type provided on the second principal surface side; a contact layer in contact with the second amorphous silicon layer; a magnesium-doped zinc oxide layer in contact with the contact layer; a first electrode layer provided on the first amorphous silicon layer; and a second electrode layer provided on the magnesium-doped zinc oxide layer. A lattice constant of the contact layer is within a range of plus or minus 30% relative to a lattice constant of the magnesium-doped zinc oxide layer.

Abstract: A method includes the steps of performing a coating or printing of ink for producing a compound semiconductor thin film so as to form a compound semiconductor coating film, the ink including 50% by mass or more of amorphous compound nanoparticles, mechanically applying a pressure to the compound semiconductor coating film, and subjecting the compound semiconductor coating film to a heat-treatment to form a compound semiconductor thin film.

Abstract: An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.

Abstract: A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg?2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg<2.0 eV, in the form of quantum dots (QD's) filling each open space defined by the matrix of WBG semiconductor material and establishing a heterojunction therewith. The active PV layer is preferably fabricated by a co-sputter deposition process, and the QD's constitute from about 40 to about 90 vol. % of the active PV layer.

Abstract: A solar cell including a non-amorphous semiconductor substrate of a first conductive type; at least a first semiconductor layer on the non-amorphous semiconductor substrate, the first semiconductor layer including a portion that is amorphous and a plurality of portions having crystal lumps, so that the plurality of portions having the crystal lumps are distributed in the first semiconductor layer; a first electrode on the semiconductor substrate; and a second electrode on the semiconductor substrate.

Abstract: A solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same provides improved efficiency when converting sunlight to power. The photovoltaic (PV) solar cell includes an intrinsic superlattice material deposited between the p-doped layer and the n-doped layer. The superlattice material is comprised of a plurality of sublayers which effectively create a graded band gap and multi-band gap for the superlattice material. The sublayers can include a nanocrystalline Si:H layer, an amorphous SiGe:H layer and an amorphous SiC:H layer. Varying the thickness of each layer results in an effective energy gap that is graded as desired for improved efficiency. Methods of constructing single junction and parallel configured two junction solar cells include depositing the various layers on a substrate such as stainless steel or glass.

Abstract: In various embodiments, photovoltaic modules include a first glass sheet, a photovoltaic device disposed on the first glass sheet, a second glass sheet, and a layer of melted glass. The second glass sheet is disposed over and in contact with at least a portion of the photovoltaic device. The first glass sheet and the second glass sheet have a gap therebetween spanned, over only a portion of an area of the gap, by the photovoltaic device. The layer of melted glass powder seals the gap between the first and second glass sheets at an edge region proximate an edge of at least one of the first or second glass sheets.

Abstract: An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the butler layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

Abstract: A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described.

Abstract: Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1?x passivated by amorphous SiyGe1?y:H.

Abstract: The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-?, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and ? denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a?b?c, conditions that 0.41727 nm?a, b, c?0.42716 nm and a/c?0.98 are satisfied.

Abstract: Conductive layer(s) in a thin film photovoltaic (TFPV) panel are divided by first scribe curves into photovoltaic cells connected in series. At least one of the layers is scribed to isolate a shunt defect in a cell from parts of that cell away from the defect. The isolation scribes can substantially follow or parallel current-flow lines established by the design of the panel. A TFPV panel can be altered by, using a controller, automatically locating a shunt defect and scribing at least one of the conductive layers along two spaced-apart second scribe curves. Each second scribe curve can intersect the two first scribe curves that bound the cell with the defect. The two second scribe curves can be on opposite sides of the defect.

Abstract: The object of the invention is a substrate for photovoltaic cell comprising at least one sheet of float glass provided on a face of at least one electrode, characterized in that said glass has a chemical composition comprising the following constituents, in a weight content that varies within the limits defined below: SiO2 69-75% Al2O3 ?0-3% CaO + MgO 11-16.2%? MgO ?0-6.5% Na2O 9-12.4%? K2O ?0-1.5%.

Abstract: It is an object of the present invention to provide a photoelectric conversion device having a passivation layer suitable for a structure provided with a heat dissipation mechanism. A photoelectric conversion device 1 of the present invention has a first electrode layer 20, a single power generation laminate 22 having a nip structure formed of a-Si (amorphous silicon), and a second electrode layer 26 of Al formed on the power generation laminate 22 through a nickel layer 24. On the second electrode layer 26, a passivation layer 28 constructed of a material containing SiCN is formed. On the passivation layer 28, a heat sink 30 (for example, formed of Al) is mounted through an adhesive layer 29.

Abstract: A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device.

Abstract: A photovoltaic cell including a semiconductor substrate of a first conductivity type provided with a main surface, a first layer made from amorphous semiconductor material of first conductivity type in contact with the main surface of the substrate, a first electric contact formed on the first amorphous layer, a second layer of amorphous semiconductor material of a second conductivity type in contact with the main surface of the substrate, a second electric contact formed on the second amorphous layer and an electrically insulating layer, a cell wherein the electrically insulating layer is formed completely on the first amorphous layer and the first and second contacts extend on the electrically insulating layer.

Abstract: A three-dimensional thin-film semiconductor substrate with selective through-holes is provided. The substrate having an inverted pyramidal structure comprising selectively formed through-holes positioned between the front and back lateral surface planes of the semiconductor substrate to form a partially transparent three-dimensional thin-film semiconductor substrate.

Abstract: A solar concentrator and photoelectric conversion structure is described. The solar concentrator and photoelectric conversion structure includes a glass concentrator and at least one photoelectric conversion layer. The glass concentrator forms a light incident surface and a plane. The plane includes a plurality of concentrating elements. Each concentrating element includes a hollow taper and a hollow pillar. The hollow taper includes a first opening. The hollow pillar includes a second opening and a third opening on opposite sides, in which the second opening is correspondingly connected to the first opening. The photoelectric conversion layer deposited onto inner side surfaces of the hollow tapers and the hollow pillars of the concentrating elements. The photoelectric conversion layer includes at least one p-type material and at least one n-type material.

Abstract: Flexible optically transparent nano structured polymer material is based on the composition that includes the derivatives of polyurethanes, hardening agent, antistatic additive and modifiers. The structure of polymer includes nano and micro-domains and clusters of various sizes and configurations that are located in a certain order in the volume of the polymer and play the role of micro lenses that provide the concentration of the light and to concentration of light on the optical device and strengthen wave of optical radiation. The transparent polymer laminated, encapsulated or coated of incident light-facing surface of optical devices including the photovoltaic modules and imparts higher conversion efficiencies to photovoltaic modules, a high optical transparency, is resistant to the humidity and destructive effects of UV, has a good adhesion to the surface of the optical devices, and a good stability to deformation.

Abstract: In order to improve the photoelectric conversion efficiency of a photoelectric conversion device, this photoelectric conversion device is provided with an electrode layer, a first semiconductor layer that is positioned on the electrode layer and contains a polycrystalline semiconductor, and a second semiconductor layer that is positioned on/above the first semiconductor layer and forms a p-n junction with the first semiconductor layer, and an average grain diameter of crystal grains in the first semiconductor layer is larger near the surface on the electrode layer side of the first semiconductor layer than the center of the first semiconductor layer in a thickness direction of the first semiconductor layer. Furthermore, the average grain diameter of the crystal grains in the first semiconductor layer is larger in a surface portion on the second semiconductor layer side of the first semiconductor layer than in the central portion.

Abstract: A semiconductor substrate comprises a semiconductor region of one conductivity type and a layer of another conductivity type with first, second and side surfaces. Over surfaces on the first surface side, the side surface side and an outer peripheral portion on the second surface side of the semiconductor region, the layer is formed. An electrode of the one conductivity type is located on the second surface adjacent to the layer. The semiconductor substrate includes a trench located between the outer periphery of the second surface and an end of the electrode with a spacing from the electrode and configured to isolate the layer along the outer periphery of the second surface. When viewed from the second surface side, a shortest distance between the end of the electrode and the trench is smaller than a shortest distance between a junction of the layer of the side surface side and the trench.

Abstract: A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers.

Abstract: This photovoltaic device is provided with a crystalline semiconductor substrate, and a first amorphous layer formed on the main surface of the substrate. At the interface between the substrate and the first amorphous layer, electrical conductivity can be improved while suppressing an increase in recombination centers, and power generation efficiency can be improved by having a p-type dopant density profile that decreases stepwise in the film thickness direction from the vicinity of the interface with the substrate.

Abstract: A method for creating a nanostructure according to one embodiment includes depositing material in a template for forming an array of nanocables; removing only a portion of the template such that the template forms an insulating layer between the nanocables; and forming at least one layer over the nanocables. A nanostructure according to one embodiment includes a nanocable having a roughened outer surface and a solid core. A nanostructure according to one embodiment includes an array of nanocables each having a roughened outer surface and a solid core, the roughened outer surface including reflective cavities; and at least one layer formed over the roughened outer surfaces of the nanocables, the at least one layer creating a photovoltaically active p-n junction. Additional systems and methods are also presented.

Abstract: A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.

Abstract: A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.

Abstract: Discussed is a solar cell including a semiconductor substrate including a base area and a doping area, a doping layer formed on the semiconductor substrate, the doping layer having a conductive type different from the doping area, a tunneling layer interposed between the doping layer and the semiconductor substrate, a first electrode connected to the doping area, and a second electrode connected to the doping layer.

Abstract: A method for fabricating a photovoltaic device includes performing a gettering process in a processing chamber which restricts formation of a layer of gettering materials on a substrate and forming a solder layer on the substrate. The solder layer is annealed to form uniformly distributed solder dots which grow on the substrate. The substrate is etched using the solder dots to protect portions of the substrate and form cones in the substrate such that the cones provide a three-dimensional radiation absorbing structure for the photovoltaic device.

Abstract: A solar module having uniform light for assembling on the top of a building to act as a roof is revealed. It comprises a transparent substrate, at least one solar chip, a hot melt adhesive film, a transparent cover plate, and a diffusion film disposed between the transparent substrate and the solar chip.

Abstract: A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Abstract: An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

Abstract: A solar cell includes a semiconductor substrate, a tunneling layer on one surface of the semiconductor substrate, a first conductive type area on the tunneling layer, a second conductive type area on the tunneling layer such that the second conductive type area is separated from the first conductive type area, and a barrier area interposed between the first conductive type area and the second conductive type area such that the barrier area separates the first conductive type area from the second conductive type area.

Abstract: The present disclosure provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of the semiconductor substrate that includes a p/n junction utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate. Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer.

Abstract: Discussed is a solar cell including a semiconductor substrate, a first tunneling layer entirely formed over a surface of the semiconductor substrate, a first conductive type area disposed on the surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive type area.