Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer having perovskite material and copper-oxide or other metal-oxide charge transport material. Such charge transport material may be disposed adjacent to the perovskite material such that the two are adjacent and/or in contact. Inclusion of both materials in an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: one or more interfacial layers, one or more mesoporous layers, and one or more dyes.

Abstract: Methods of forming a photovoltaic structures including nanoparticles are disclosed. The method includes electrospray deposition of nanoparticles. The nanoparticles can include TiO2 nanoparticles and quantum dots. In an example, the nanoparticles are formed on a flexible substrate. In various examples, the flexible substrate is light transparent. Photovoltaic structures and apparatus for forming photovoltaic structures are disclosed.

Abstract: The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device.

Abstract: Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

Abstract: A compound semiconductor solar battery according to the present invention includes a substrate; a back electrode disposed on the substrate; a p-type compound semiconductor light absorbing layer disposed on the back electrode; an n-type compound semiconductor buffer layer disposed on the p-type compound semiconductor light absorbing layer; and a transparent electrode disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorbing layer has a cross sectional structure including, in a thickness direction, a portion only of a single particle and a portion of a plurality of piled particles. In the portion of a plurality of piled particles, the particles in contact with the back electrode have a ratio y1 of Ga/(In+Ga), and the particles in contact with the n-type compound semiconductor buffer layer have a ratio y2 of Ga/(In+Ga), where y1>y2.

Abstract: In one aspect, optoelectronic devices are described herein. In some embodiments, an optoelectronic device comprises a fiber core, a radiation transmissive first electrode surrounding the fiber core, at least one photosensitive inorganic layer surrounding the first electrode and electrically connected to the first electrode, and a second electrode surrounding the inorganic layer and electrically connected to the inorganic layer. In some embodiments, the device comprises a photovoltaic cell.

Abstract: A photovoltaic (PV) device having a quantum dot sensitized interface includes a first conductor layer and a second conductor layer. At least one of the conductor layers is transparent to solar radiation. A quantum dot (nanoparticle) sensitized photo-harvesting interface comprises a photo-absorber layer, a quantum dot layer and a buffer layer, placed between the two conductors. The absorber layer is a p-type material and the buffer layer is an n-type material. The quantum dot layer has a tunable bandgap to cover infrared (IR), visible light and ultraviolet (UV) bands of solar spectrum.

Abstract: The disclosure provides a method for fabricating a solar cell, including: providing a first substrate; forming a light absorption precursor layer on the first substrate; conducting a thermal process to the light absorption precursor layer to form a light absorption layer, wherein the light absorption layer includes a first light absorption layer and a second light absorption layer, and the first absorption layer is formed on the first substrate; forming a second substrate on the second light absorption layer; removing the first substrate to expose a surface of the first light absorption layer; forming a zinc sulfide (ZnS) layer on the surface of the first light absorption layer; and forming a transparent conducting oxide (TCO) layer on the zinc sulfide (ZnS) layer.

Abstract: Methods of forming absorber layers in a TFPV device are provided. Methods are described to provide the formation of metal oxide films and heating the metal oxide films in the presence of a chalcogen to form a metal-oxygen-chalcogen alloy. Methods are described to provide the formation of metal oxide films, forming a layer of elemental chalcogen on the metal oxide film, and heating the stack to form a metal-oxygen-chalcogen alloy. In some embodiments, the metal oxide film includes zinc oxide and the chalcogen includes selenium.

Abstract: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.

Abstract: A photovoltaic device includes a substrate, a back contact layer disposed above the substrate, an absorber layer comprising an absorber material disposed above the back contact layer, and a buffer layer disposed above the absorber layer. The buffer layer includes a first layer comprising the absorber material doped with zinc, and a second layer comprising a zinc-containing compound and a cadmium-containing compound.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

Abstract: A method of forming an ohmic contact and electron reflector on a surface of a CdTe containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Cd-deficient, Te-rich surface region at a surface of the CdTe containing compound film; exposing the Cd-deficient surface region to an electron reflector forming material; forming the electron reflector; and laying down a contact layer over the electron reflector layer. The solar cell so produced has a Cd-deficient region which is converted to an electron reflector layer on the surface of a CdTe absorber layer, and an ohmic contact. A Cd/Te molar ratio within the Cd-deficient region decreases from 1 at an interface with the CdTe absorber layer to a value less than 1 towards the ohmic contact.

Abstract: This invention describes a semiconductor material of general formula (I) Me12Me21-xMe3xMe4(C11-yC2y)4, in which x stands for a numeric value from 0 to 1, and y stands for a numeric value of 0 to 1, as well as its use as an absorber material in a solar cell. The metal Mel is a metal which is selected from the metals in group 11 of the periodic table of the elements (Cu, Ag or Au). The metals Me2 and Me3 are selected from the elements of the 12th group of the periodic table of elements (Zn, Cd & Hg). The metal Me4 is a metal which is selected from the 4th main group of the periodic table of elements (C, Si, Ge, Sn and Pb). The non-metals C1 and C2 are selected from the group of chalcogenides (S, Se and Te).

Abstract: A method for forming a photovoltaic device includes forming an absorber layer with a granular structure on a conductive layer; conformally depositing an insulating protection layer over the absorber layer to fill in between grains of the absorber layer; and planarizing the protection layer and the absorber layer. A buffer layer is formed on the absorber layer, and a top transparent conductor layer is deposited over the buffer layer.

Abstract: Exemplary embodiments of the present disclosure are directed to improve p-type doping (p-doping) of cadmium telluride (CdTe) for CdTe-based solar cells, such as cadmium Sulfide (Cds)/CdTe solar cells. Embodiments can achieve improved p-doping of CdTe by creating a high density of cadmium (Cd) vacancies (VCd) and subsequently substituting a high density of substitutional defects and/or defect complexes for the Cd vacancies that were created. Formation of a high density of substitutional defects and defect complexes as a p-dopant can improve light-to-electricity conversion efficiency, doping levels or hole concentrations, junction band bending, and/or ohmic contact associated with p-type CdTe (p-CdTe) based solar cells.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Abstract: Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn1-x(R)xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.

Abstract: A thin-film solar battery includes a substrate, a first electrode, a photoelectric conversion layer, and a second electrode. The first electrode, the photoelectric conversion layer, and the second electrode are laminated on the substrate. The photoelectric conversion layer has a laminated layer structure which includes at least a p-type layer and an n-type layer. The p-type layer is formed of Cu, In, Ga, and Se, and a composition ratio of Se of the p-type layer is equal to or higher than 40 atomic % and less than 50 atomic %. The n-type layer is a compound of an element of at least one Group selected from Group 2, Group 7, and Group 12, an element of Group 13, and an element of Group 16, and contains at least In as the element of Group 13 and at least S as the element of Group 16.

Abstract: Photovoltaic (PV) devices and solution-based methods of making the same are described. The PV devices include a CIGS-type absorber layer formed on a molybdenum substrate. The molybdenum substrate includes a layer of low-density molybdenum proximate to the absorber layer. The presence of low-density molybdenum proximate to the absorber layer has been found to promote the growth of large grains of CIGS-type semiconductor material in the absorber layer.

Abstract: Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdSxTe1-x (where 0?x?1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 ?m and about 14 ?m and methods for forming the same.

Abstract: A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.

Abstract: A photovoltaic device is disclosed, the device having a zinc-containing layer, such as a ZnO1-xSx layer, as a window layer, as part of a composite window layer, and/or as a buffer layer. Use of the ZnO1-xSx layer improves an overall efficiency of the photovoltaic device due to improved optical transmission thereof as compared to CdS window layers, and due to a improved quantum efficiency of the photovoltaic device in the blue light spectrum due to the presence of the ZnO1-xSx layer.

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1-x) layer as are methods of forming such a photovoltaic device.

Abstract: Photovoltaic devices with a zinc oxide layer replacing all or part of at least one of a window layer and a buffer layer, and methods of making the devices.

Abstract: A multi-junction photovoltaic cell includes at least two P-N junctions electrically connected to each other in series. Each P-N junction includes a P-type absorber layer and a N-type emitter layer, each P-type absorber layer including a plurality of alternating thin film layers of zinc telluride and lead telluride, wherein zinc telluride and lead telluride have respective bandgaps when in bulk thickness and the effective bandgap of each P-type absorber layer is between the respective bandgaps. The effective bandgap of at least one P-type absorber layer is different from that of at least one other P-type absorber layer.

Abstract: A photovoltaic device is provided which includes a plurality of junction layers. Each junction layer includes a plurality of photovoltaic cells electrically connected to one another. At least one of the junction layers is at least in part optically transmissive. The junction layers are arranged in a stack on top of each other.

Abstract: A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.

Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided.

Abstract: An improved efficiency thin film solar cell is disclosed. Nanoscale indentations or protrusions are formed on the cross sectional surface of a carrier layer, onto which a thin metal film is deposited. Additional layers, including semiconductor absorber and collector layers and a window layer, are disposed on the metal film, thereby completing the solar cell. The nanostructure underlying the metal film serves to reduce the work function of the metal and thereby assists in the absorption of holes created by solar photons. This leads to more efficient electricity generation in the solar cell. In a further embodiment of the present invention the cross sectional surface of the semiconductor absorber layer is also modified by nanoscale indentations or protrusions. These indentations or protrusions have the effect of altering the size of the semiconductor band gap, thereby optimizing the radiation absorption properties of the solar cell.

Abstract: A photovoltaic module may include a transparent conductive layer on a substrate a first submodule including a first plurality of photovoltaic cells connected in series and a second submodule including a second plurality of photovoltaic cells connected in series.

Abstract: The invention provides a method for effecting a photocatalytic or photoelectrocatalytic reaction of a reactant comprising contacting a metallic material having an electrical conductivity of 105 to 106 S/m with the reactant and exposing the metallic material and the reactant to visible light so as to catalyse the reaction of the reactant.

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

Abstract: A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.

Abstract: Novel structures of photovoltaic cells (also called as solar cells) are provided. The cells are based on nanoparticles or nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators, and may be metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications such as in space, commercial, residential and industrial applications.

Abstract: The disclosure relates to apparatus and methods of photovoltaic or solar module design and fabrication. A photovoltaic (PV) module includes one or more photovoltaic cells mounted to a support, a first terminal connected to at least one of the one or more PV cells, a second terminal connected to at least one of the one or more PV cells, and a bypass line mounted to the support for bypassing the one or more PV cells. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.

Abstract: Methods for improving the efficiency of solar cells are disclosed. A solar cell consistent with the present disclosure includes a back contact metal layer disposed on a substrate. The solar cell also includes an electron reflector material(s) layer formed on the back contact metal layer and an absorber material(s) layer disposed on the electron reflector material(s) layer. In addition, the solar cell includes a buffer material(s) layer formed on the absorber material(s) layer wherein the electron reflector material(s) layer, absorber material(s) layer, and buffer material(s) layer form a pn junction within the solar cell. Furthermore, a TCO material(s) layer is formed on the buffer material(s) layer. In addition, the front contact layer is formed on the TCO material(s) layer.

Abstract: An article, such as a photovoltaic device, and methods for making such articles, are provided. For example, one embodiment is an article comprising a plurality of layers comprising an absorber layer and a window stack. The window stack comprises antimony.

Abstract: The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Abstract: Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?535° C., for example, ?570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: An ink composition, a thin film solar cell and method for forming the thin film solar cell are disclosed. The ink composition includes a solvent system, a source of Cu, a source of Zn, a source of Sn, a source of S and/or Se, and a source of group III element, wherein the ink composition is adapted in forming a I-II-IV-VI thin film solar cell to increase a fill factor of the I-II-IV-VI thin film solar cell.

Abstract: An inorganic nanocrystal solar cell comprising a substrate, a layer of metal, a layer of CdTe, a layer of CdSe, and a layer of transparent conductor. An inorganic nanocrystal solar cell comprising a transparent conductive substrate, a layer of CdSe, a layer of CdTe, and a Au contact. A method of spray deposition for inorganic nanocrystal solar cells comprising subjecting a first solution of CdTe or CdSe nanocrystals to ligand exchange with a small coordinating molecule, diluting the first solution in solvent to form a second solution, applying the second solution to a substrate, drying the substrate, dipping the substrate in a solution in MeOH of a compound that promotes sintering, washing the substrate with iPrOH, drying the substrate with N2, and heating and forming a film on the substrate.

Abstract: A method of spray deposition for inorganic nanocrystal solar cells comprising subjecting a first solution of CdTe or CdSe nanocrystals to ligand exchange with a small coordinating molecule, diluting the first solution in solvent to form a second solution, applying the second solution to a substrate, drying the substrate, dipping the substrate in a solution in MeOH of a compound that promotes sintering, washing the substrate with iPrOH, drying the substrate with N2, and heating and forming a film on the substrate. An inorganic nanocrystal solar cell comprising a substrate, a layer of metal, a layer of CdTe, a layer of CdSe, and a layer of transparent conductor. An inorganic nanocrystal solar cell comprising a transparent conductive substrate, a layer of CdSe, a layer of CdTe, and a Au contact.

Abstract: The textured transparent conductive layer according to the invention is deposited on a substrate intended for a photoelectric device and exhibiting a surface morphology formed from a sequence of humps and hollows. It is characterized in that its hollows have a rounded base with a radius of more than 25 nm; the said hollows are virtually smooth, which is to say that, where they exhibit microroughnesses, these microroughnesses have a height on average of less than 5 nm; and its flanks form an angle with the plane of the substrate whose median of the absolute value is between 30° and 75°.

Abstract: A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.

Abstract: Volume compensation in photovoltaic device is provided. The photovoltaic device has an outer transparent casing and a substrate that, together, define an inner volume. At least one solar cell is on the substrate. A filler layer seals the at least one solar cell within the inner volume. A container within the inner volume has an opening in fluid communication with the filler layer. A diaphragm is affixed to the opening thereby sealing the interior of the container from the filler layer. The diaphragm is configured to decrease the volume within the container when the filler layer thermally expands and to increase the volume within the container when the filler layer thermally contracts. In some instances, the substrate is hollowed and the container is formed within this hollow. The container can have multiple openings, each sealed with a diaphragm. There can be multiple containers within the photovoltaic device.