Silicon Or Germanium Containing Patents (Class 136/261)
  • Patent number: 8941005
    Abstract: It is an object of the present invention to provide a photoelectric conversion device having a passivation layer suitable for a structure provided with a heat dissipation mechanism. A photoelectric conversion device 1 of the present invention has a first electrode layer 20, a single power generation laminate 22 having a nip structure formed of a-Si (amorphous silicon), and a second electrode layer 26 of Al formed on the power generation laminate 22 through a nickel layer 24. On the second electrode layer 26, a passivation layer 28 constructed of a material containing SiCN is formed. On the passivation layer 28, a heat sink 30 (for example, formed of Al) is mounted through an adhesive layer 29.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: January 27, 2015
    Assignee: National University Corporation Tohoku University
    Inventor: Tadahiro Ohmi
  • Publication number: 20150020876
    Abstract: Disclosed are a solar cell and a method for fabricating the same. The solar cell according to the embodiment includes a back electrode layer on a support substrate; a light absorbing layer including a glass frit having sodium on the back electrode layer; and a front electrode layer on the light absorbing layer.
    Type: Application
    Filed: July 6, 2012
    Publication date: January 22, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Gi Gon Park
  • Patent number: 8933327
    Abstract: A conventional thin-film photoelectric converter using amorphous germanium or crystalline silicon as a photoelectric conversion layer is problematic in that light having a long wavelength of 1100 nm or more cannot be used for photoelectric conversion, and is inefficient. The problem is solved by a thin-film photoelectric converter including one or more photoelectric conversion units each having a photoelectric conversion layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer, wherein the photoelectric conversion layer of at least one photoelectric conversion unit includes an intrinsic or weak n-type crystalline germanium semiconductor, and the absorption coefficient of infrared-absorption peak at wave number of 935±5 cm?1 of the crystalline germanium semiconductor is less than 6000 cm?1.
    Type: Grant
    Filed: August 24, 2009
    Date of Patent: January 13, 2015
    Assignee: Kaneka Corporation
    Inventors: Toshiaki Sasaki, Naoki Kadota
  • Publication number: 20150007875
    Abstract: A PIN photovoltaic (PIN PV) device is composed of a first electrode layer, a p-type semiconductor layer, an intrinsic semiconductor layer, an n-type semiconductor substrate, and a back surface electrode. Also described is a method for manufacturing a PIN PV device. In a first embodiment, the method includes cleaning an n-type semiconductor substrate; introducing an inert gas under vacuum and a high temperature to form a high resistivity layer on the top surface of the substrate; forming or depositing a p-type semiconductor layer on the high resistivity layer; forming a transparent electrode layer on the p-type semiconductor layer; and forming a metal electrode on the bottom surface of the substrate. In a second embodiment, an SiC or SiO2 isolation layer is formed on the bottom surface of the substrate after initial cleaning of the wafer before the high resistivity layer is formed on the top of the substrate.
    Type: Application
    Filed: March 16, 2014
    Publication date: January 8, 2015
    Inventors: Jose Briceno, Koji MATSUMARU
  • Patent number: 8927852
    Abstract: A photovoltaic apparatus includes an absorber including a first quantum dot layer having a first plurality of quantum dots of a first quantum dot material in a first matrix material, and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a second quantum dot layer having a second plurality of quantum dots of a second quantum dot material and a second matrix material.
    Type: Grant
    Filed: August 21, 2008
    Date of Patent: January 6, 2015
    Assignee: Seagate Technology LLC
    Inventors: Hans Jürgen Richter, Samuel Dacke Harkness, IV
  • Patent number: 8927854
    Abstract: A solar cell includes a first conductivity type substrate; an emitter unit having a second conductivity type opposite to the first conductivity type, and forming a p-n junction with the substrate; an anti-reflective film positioned on the emitter unit; a plurality of first electrodes positioned on the anti-reflective film and connected with the emitter unit; and a second electrode connected with the substrate, wherein the emitter unit includes a first region and a second region that are positioned between an outermost first electrode among the plurality of first electrodes and the edge of the substrate, and a thickness of the first region gradually increases in going from the edge of the substrate to the outermost first electrode, and a thickness of the second region is uniform.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: January 6, 2015
    Assignee: LG Electronics Inc.
    Inventors: Jinhyung Lee, Junyong Ahn, Younghyun Lee
  • Patent number: 8921686
    Abstract: A method to fabricate a photovoltaic device includes forming first and second contact regions at the first surface of a semiconductor donor body. A cleave plane may be formed by implanting ions into the donor body, and a lamina that includes the contact regions is cleaved from the donor body at the cleave plane. The first surface of the lamina may be contacted with a temporary support and fabricated into a photovoltaic device, wherein the lamina comprises the base of the photovoltaic device.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: December 30, 2014
    Assignee: GTAT Corporation
    Inventors: Steven M. Zuniga, Christopher J. Petti, Gopal Prabhu
  • Patent number: 8916772
    Abstract: A three-dimensional thin-film semiconductor substrate with selective through-holes is provided. The substrate having an inverted pyramidal structure comprising selectively formed through-holes positioned between the front and back lateral surface planes of the semiconductor substrate to form a partially transparent three-dimensional thin-film semiconductor substrate.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: December 23, 2014
    Assignee: Solexel, Inc.
    Inventors: Mehrdad M. Moslehi, David Xuan-Qi Wang
  • Patent number: 8912431
    Abstract: A semiconductor substrate comprises a semiconductor region of one conductivity type and a layer of another conductivity type with first, second and side surfaces. Over surfaces on the first surface side, the side surface side and an outer peripheral portion on the second surface side of the semiconductor region, the layer is formed. An electrode of the one conductivity type is located on the second surface adjacent to the layer. The semiconductor substrate includes a trench located between the outer periphery of the second surface and an end of the electrode with a spacing from the electrode and configured to isolate the layer along the outer periphery of the second surface. When viewed from the second surface side, a shortest distance between the end of the electrode and the trench is smaller than a shortest distance between a junction of the layer of the side surface side and the trench.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: December 16, 2014
    Assignee: KYOCERA Corporation
    Inventors: Ken-ichi Okada, Norikazu Nakatani, Naoya Kobamoto, Hiroshi Ueda
  • Publication number: 20140360584
    Abstract: A manufacturing method of a solar cell includes the following steps, providing a substrate, which includes a first conductivity type semi-conductor layer and a second conductivity type semi-conductor layer. The conductivity type of the first conductivity type semi-conductor layer is opposite to the conductivity type of the second conductivity type semi-conductor layer. A graphene oxide layer is formed on the substrate and the graphene oxide layer contacts with the second conductivity type semi-conductor layer. A first electrode and a second electrode are formed on the substrate. The first electrode contacts with the first conductivity type semi-conductor layer, and the second electrode contacts with the second conductivity type semi-conductor layer.
    Type: Application
    Filed: June 7, 2013
    Publication date: December 11, 2014
    Inventors: CHU-HSUAN LIN, WEN-TZU HSU, ZONG-SIAN TSAI, CHUN-TIEN YU
  • Patent number: 8906269
    Abstract: The present invention relates to a paste and a solar cell using the paste. The paste according to an embodiment of the present invention comprises three and more than aluminum powders having different shape, size, and type, a glass frit, and an organic vehicle, wherein the aluminum powers includes a first powder of 40 to 50 wt %, a second powder of 20 to 30 wt %, and a third powder of 0.1 to 2 wt %, and the first to third powders have one or more than different shapes of a globular shape, a flat shape, a nano shape, and combinations thereof.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: December 9, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: In Jae Lee, Jin Gyeong Park, Jun Phil Eom, Soon Gil Kim
  • Patent number: 8907210
    Abstract: This invention describes a semiconductor material of general formula (I) Me12Me21-xMe3xMe4(C11-yC2y)4, in which x stands for a numeric value from 0 to 1, and y stands for a numeric value of 0 to 1, as well as its use as an absorber material in a solar cell. The metal Mel is a metal which is selected from the metals in group 11 of the periodic table of the elements (Cu, Ag or Au). The metals Me2 and Me3 are selected from the elements of the 12th group of the periodic table of elements (Zn, Cd & Hg). The metal Me4 is a metal which is selected from the 4th main group of the periodic table of elements (C, Si, Ge, Sn and Pb). The non-metals C1 and C2 are selected from the group of chalcogenides (S, Se and Te).
    Type: Grant
    Filed: July 15, 2009
    Date of Patent: December 9, 2014
    Assignee: crystalsol OÜ
    Inventors: Dieter Meissner, Mare Altosaar, Enn Mellikov, Jaan Raudoja, Kristi Timmo
  • Patent number: 8900908
    Abstract: The invention relates to a method for local high-doping and contacting of a semiconductor structure which is a solar cell or a precursor of a solar cell and has a silicon semiconductor substrate (1) of a base doping type. The high-doping and contacting is effected by producing a plurality of local high-doping regions of the base doping type in the semiconductor substrate (1) on a contacting side (1a) of the semiconductor substrate and applying a metal contacting layer (7) to the contacting side (1a) or, if applicable, one or more intermediate layers wholly or partially covering the contacting side (1a), to form electrically conductive connections between the metal contacting layer (7) and the semiconductor substrate (1) at the high doping regions.
    Type: Grant
    Filed: January 18, 2011
    Date of Patent: December 2, 2014
    Assignees: Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung E.V., Albert-Ludwigs-Universität Freiburg
    Inventors: Dominik Suwito, Jan Benick, Ulrich Jager
  • Patent number: 8895841
    Abstract: A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: November 25, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
  • Publication number: 20140338749
    Abstract: A material includes a glass or glass-ceramic sheet provided on at least one portion of one of its faces with a photocatalytic coating based on titanium oxide deposited on a silica-based sublayer deposited by combustion chemical vapor deposition, the roughness Ra of which is between 4 and 30 nm, limits included.
    Type: Application
    Filed: September 12, 2012
    Publication date: November 20, 2014
    Applicant: SAINT-GOBAIN GLASS FRANCE
    Inventor: Rosiana Aguiar
  • Publication number: 20140332078
    Abstract: A hybrid organic solar cell (HOSC) with perovskite structure as absorption material and a manufacturing method thereof are provided. The HOSC includes a conductive substrate, a hole transport layer, an active layer, a hole blocking layer and a negative electrode. The active layer has a light absorption layer (LAL) and an electron acceptor layer (EAL). The LAL is made of perovskite material represented by the following equation: CnH2n+1NH3XY3, n is positive integer form 1 to 9; X is Pb, Sn or Ge; and Y is at least one of I, Br or Cl. The EAL is made of at least one type of fullerene or derivatives thereof. A planar heterojunction (PHJ) is formed between the LAL and the EAL. The LAL has simple structure and fabricating process with relatively low cost, so that it is advantageous to carry out the mass production of HOSCs of flexible solid-state form.
    Type: Application
    Filed: July 21, 2013
    Publication date: November 13, 2014
    Applicant: National Cheng Kung University
    Inventors: Tzung-Fang Guo, Jyun-Yuan Jeng, Yi-Fang Chiang, Mu-Huan Lee, Chao-Yu Chen
  • Publication number: 20140326316
    Abstract: Thin films comprising crystalline Fe2XY4, wherein X is Si or Ge and Y is S or Se, are obtained by coating an ink comprised of nanoparticle precursors of Fe2XY4 and/or a non-particulate amorphous substance comprised of Fe, X and Y on a substrate surface and annealing the coating. The coated substrate thereby obtained has utility as a solar absorber material in thin film photovoltaic devices.
    Type: Application
    Filed: May 1, 2014
    Publication date: November 6, 2014
    Applicant: Delaware State University
    Inventors: Daniela Rodica Radu, Cheng-Yu Lai
  • Patent number: 8877100
    Abstract: A paste composition for forming an electrode on a silicon semiconductor substrate, the paste containing aluminum powder; an organic vehicle and a hydroxide. The paste composition finds applicability in a solar cell element wherein the electrode is formed by applying the paste on the silicon semiconductor substrate and thereafter, firing the paste composition.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: November 4, 2014
    Assignee: Toyo Aluminium Kabushiki Kaisha
    Inventors: Gaochao Lai, Takashi Watsuji, Haruzo Katoh
  • Patent number: 8871533
    Abstract: A solar cell making method includes steps of making a round P-N junction preform by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer, wherein the round P-N junction preform defines a first surface and a second surface; forming a first electrode preform on the first surface and forming a second electrode preform on the second surface, thereby forming a round solar cell preform; and forming a photoreceptive surface with the P-N junction exposed on the photoreceptive surface by cutting the round solar cell preform into a plurality of arc shaped solar cells, the photoreceptive surface being on a curved surface of the arc shaped solar cell and being configured to receive incident light beams.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: October 28, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yuan-Hao Jin, Qun-Qing Li, Shou-Shan Fan
  • Publication number: 20140311574
    Abstract: The application is directed to improved dye-sensitized solar cells and methods for making the same. In accordance with certain embodiments, dye-sensitized anodes are exposed to a vapor including at least one chemical that reacts with the catalytically active material of the anode to deposit a silica layer only on regions that are not covered with the dyes. The resulting self-aligned silica layers provide increased efficiency for dye-sensitized solar cells by reducing the leakage current from the anode to the electrolyte.
    Type: Application
    Filed: November 19, 2012
    Publication date: October 23, 2014
    Inventor: Roy Gerald Gordon
  • Publication number: 20140311573
    Abstract: A method of making a coated substrate having a transparent conductive oxide layer with a dopant selectively distributed in the layer includes selectively supplying an oxide precursor material and a dopant precursor material to each coating cell of a multi-cell chemical vapor deposition coater, wherein the amount of dopant material supplied is selected to vary the dopant content versus coating depth in the resultant coating.
    Type: Application
    Filed: March 7, 2014
    Publication date: October 23, 2014
    Applicant: PPG Industries Ohio, Inc.
    Inventors: James W. McCamy, Peter Tausch, Gary J. Nelis, Ashtosh Ganjoo
  • Publication number: 20140311567
    Abstract: A solar cell includes a semiconductor substrate, a tunneling layer on one surface of the semiconductor substrate, a first conductive type area on the tunneling layer, a second conductive type area on the tunneling layer such that the second conductive type area is separated from the first conductive type area, and a barrier area interposed between the first conductive type area and the second conductive type area such that the barrier area separates the first conductive type area from the second conductive type area.
    Type: Application
    Filed: April 22, 2014
    Publication date: October 23, 2014
    Applicant: LG Electronics Inc.
    Inventors: Minho Choi, Hyunjung Park, Junghoon Choi
  • Publication number: 20140305504
    Abstract: A high voltage output solar cell which is small in size and high in power generation efficiency is provided. The solar cell is provided with a p-type or n-type monocrystalline semiconductor substrate (1) forming a power generation layer, a plurality of hole collecting layers (2), electron collecting layers (3), and grooves (7) provided inside of the semiconductor substrate (1) contiguous to a back surface which faces a light receiving surface of the semiconductor substrate (1), hole collecting layers (2) and electron collecting layers (3) being provided between adjoining grooves (7) and hole collecting layers (2) and electron collecting layers (3) being provided sandwiching grooves (7), and interconnect layers (8) which connect hole collecting layers (2) and electron collecting layers (3) sandwiching grooves (7), the grooves (7) being formed from the back surface side toward the inside of semiconductor substrate (1).
    Type: Application
    Filed: April 2, 2014
    Publication date: October 16, 2014
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Taizo Masuda, Kenichi Okumura, Junya Ota
  • Patent number: 8859889
    Abstract: A solar cell element is disclosed. The solar cell element comprises a semiconductor substrate, a first electrode, a second electrode, a first wiring member and a second wiring member. The semiconductor substrate with a first surface and a second surface comprises a plurality of through-holes. The first electrode comprises a plurality of conduction portions and at least one first output extracting portion. The second electrode has a resistivity of less than 2.5×10-8 ?m (ohm-meter). The first wiring member comprises a first end face in a long direction thereof. The second wiring member comprises a second end face in a long direction thereof facing the first end face.
    Type: Grant
    Filed: April 20, 2011
    Date of Patent: October 14, 2014
    Assignee: KYOCERA Corporation
    Inventor: Koutarou Umeda
  • Patent number: 8858841
    Abstract: An aluminum paste composition is provided, which comprises: (a) an aluminum powder, (b) a glass grit, (c) a binder, and (d) a dispersing agent. A solar cell element is further provided, which includes an electrode or wire formed by coating the aluminum paste composition on a silicon semiconductor substrate and drying and sintering it. The dispersing agent contained in the aluminum paste composition of the present invention has good moisture resistance and is capable of effectively addressing the warping problem of a solar cell and improving the adhesion between the backside aluminum paste and the silver paste of the solar cell.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: October 14, 2014
    Assignee: Eternal Chemical Co., Ltd.
    Inventors: Hsun-Jen Chuang, Tsai-Fa Hsu
  • Publication number: 20140299187
    Abstract: Discussed is a solar cell including a semiconductor substrate, a first tunneling layer entirely formed over a surface of the semiconductor substrate, a first conductive type area disposed on the surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive type area.
    Type: Application
    Filed: April 2, 2014
    Publication date: October 9, 2014
    Applicant: LG ELECTRONICS INC.
    Inventors: Jaewon CHANG, Kyungjin SHIM, Hyunjung PARK, Junghoon CHOI
  • Publication number: 20140299189
    Abstract: Provided is the structure of a thin film solar cell. The structure of the thin film solar cell includes a first substrate, a first electrode provided on the first substrate, a p-type semiconductor layer provided on the first electrode, a first buffer layer provided on the p-type semiconductor layer, an optical absorption region provided on the first buffer layer, a second buffer layer provided on the optical absorption region, an n-type semiconductor layer provided on the second buffer layer, a second electrode provided on the n-type semiconductor layer, and a second substrate on the second electrode. The optical absorption region includes a silicon layer, a first layer on the silicon layer, and a second layer having a different energy band gap from the first layer, on the first layer.
    Type: Application
    Filed: March 18, 2014
    Publication date: October 9, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: JungWook LIM, Sun Jin YUN, Da Jung LEE
  • Patent number: 8853527
    Abstract: Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.
    Type: Grant
    Filed: February 15, 2008
    Date of Patent: October 7, 2014
    Assignee: NanoGram Corporation
    Inventor: Henry Hieslmair
  • Patent number: 8853531
    Abstract: Photon Enhanced Thermionic Emission (PETE) is exploited to provide improved efficiency for radiant energy conversion. A hot (greater than 200° C.) semiconductor cathode is illuminated such that it emits electrons. Because the cathode is hot, significantly more electrons are emitted than would be emitted from a room temperature (or colder) cathode under the same illumination conditions. As a result of this increased electron emission, the energy conversion efficiency can be significantly increased relative to a conventional photovoltaic device. In PETE, the cathode electrons can be (and typically are) thermalized with respect to the cathode. As a result, PETE does not rely on emission of non-thermalized electrons, and is significantly easier to implement than hot-carrier emission approaches.
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: October 7, 2014
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Jared Schwede, Nicholas Melosh, Zhixun Shen
  • Publication number: 20140283902
    Abstract: One embodiment of the present invention provides a back junction solar cell. The solar cell includes a base layer, a quantum-tunneling-barrier (QTB) layer situated below the base layer facing away from incident light, an emitter layer situated below the QTB layer, a front surface field (FSF) layer situated above the base layer, a front-side electrode situated above the FSF layer, and a back-side electrode situated below the emitter layer.
    Type: Application
    Filed: May 6, 2014
    Publication date: September 25, 2014
    Applicant: Silevo, Inc.
    Inventors: Jiunn Benjamin Heng, Jianming Fu, Zheng Xu, Zhigang Xie
  • Patent number: 8835753
    Abstract: A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: September 16, 2014
    Assignee: AU Optronics Corp.
    Inventors: Yen-Cheng Hu, Hsin-Feng Li, Zhen-Cheng Wu
  • Patent number: 8829339
    Abstract: A method for forming a photovoltaic device includes patterning a dielectric layer on a substrate to form a patterned dielectric having local spacings between shapes and remote spacings between groups of shapes, and depositing a doped epitaxial layer over the patterned dielectric such that selective crystalline growth occurs in portions of the epitaxial layer in contact with the substrate and noncrystalline growth occurs in portions of the epitaxial layer in contact with the patterned dielectric. First metal contacts are formed over the local spacings of the patterned dielectric, and second metal contacts are formed over the remote spacings. Exposed portions of the noncrystalline growth are etched using the first and second metal contacts as an etch mask to form alternating interdigitated emitter and back contact stacks.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: September 9, 2014
    Assignee: International Business Machines Corporation
    Inventors: Keith E. Fogel, Bahman Hekmatshoartabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
  • Publication number: 20140246092
    Abstract: A silicon substrate having a new shape on the opposite surface side of textures can be manufactured at low costs by performing high-quality washing to the silicon substrate with a substrate plane orientation (100) having a texture structure by using a gas etching method, thereby improving use efficiency of light. A silicon substrate is provided having the substrate plane orientation (100) with textures, in which fine rectangular-shaped unevenness is formed in a ripple shape on the opposite side surface of the texture-formed surface, and the depth of concave portions therein is 10 to 200 nm.
    Type: Application
    Filed: February 27, 2014
    Publication date: September 4, 2014
    Applicant: Panasonic Corporation
    Inventors: KOUJI ARAI, NAOSHI YAMAGUCHI, HIROSHI TANABE
  • Publication number: 20140238461
    Abstract: The present invention provides a solar cell unit, which comprises a semiconductor plate of first-type doping or second-type doping; wherein the semiconductor plate has a first surface and a second surface opposite to the first surface; the semiconductor plate comprises a first-type doping region and second-type doping region, both the first-type doping region and the second-type doping region are located on the first surface of the semiconductor plate; a first sheet is provided on the side surface of the semiconductor plate that is adjacent to the first-type doping region, and a second sheet is provided on the side surface of the semiconductor plate that is adjacent to the second type doping region.
    Type: Application
    Filed: July 25, 2013
    Publication date: August 28, 2014
    Inventors: Zhijiong LUO, Huilong ZHU, Haizhou Yin
  • Publication number: 20140238490
    Abstract: A method (100) for decreasing an excess carrier induced degradation in a silicon substrate, includes providing (120, 130) a charged insulation layer capable of retaining charge on the silicon substrate for generating a potential difference between the charged insulation layer and the silicon substrate, and heat treating (140) the silicon substrate for enabling an impurity causing the excess carrier induced degradation and being in the silicon substrate to diffuse due to the potential difference into a boundary of the silicon substrate and the insulation layer.
    Type: Application
    Filed: October 1, 2012
    Publication date: August 28, 2014
    Applicant: AALTO-KORKEAKOULUSAATIO
    Inventors: Antti Haarahiltunen, Hele Savin, Marko Veli Yli-Koski
  • Patent number: 8816035
    Abstract: Photoactive polymers comprising first and second co-monomer repeat units, the first co-monomer repeat unit comprising a moiety selected from the group consisting of an alkylthieno[3,4-c]pyrrole-4,6-dione moiety and a 1,3-dithiophene-5-alkylthieno[3,4-c]pyrrole-4,6-dione moiety, and the second co-monomer repeat unit comprising a moiety selected from the group consisting of a 4,4?-dialkyl-dithieno[3,2-b:2?3?-d]silole moiety, an ethylene moiety, a thiophene moiety, an N-alkylcarbazole moiety, an N-(1-alkyl)dithieno[3,2-b:2?3?-d]pyrrole moiety and a 4,8-dialkyloxylbenzo[1,2-b:3,4-b]dithiophene moiety are described herein. These polymers are suitable for use in photovoltaic cells and field effect transistors.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: August 26, 2014
    Assignee: Universite Laval
    Inventors: Mario Leclerc, Ahmed Najari, Yingping Zou
  • Patent number: 8816192
    Abstract: An improved efficiency thin film solar cell is disclosed. Nanoscale indentations or protrusions are formed on the cross sectional surface of a carrier layer, onto which a thin metal film is deposited. Additional layers, including semiconductor absorber and collector layers and a window layer, are disposed on the metal film, thereby completing the solar cell. The nanostructure underlying the metal film serves to reduce the work function of the metal and thereby assists in the absorption of holes created by solar photons. This leads to more efficient electricity generation in the solar cell. In a further embodiment of the present invention the cross sectional surface of the semiconductor absorber layer is also modified by nanoscale indentations or protrusions. These indentations or protrusions have the effect of altering the size of the semiconductor band gap, thereby optimizing the radiation absorption properties of the solar cell.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: August 26, 2014
    Assignee: Borealis Technical Limited
    Inventor: Hans Juergen Walitzki
  • Patent number: 8816193
    Abstract: A composition for manufacturing an electrode of a solar cell, comprising metal nanoparticles dispersed in a dispersive medium, wherein the metal nanoparticles contain silver nanoparticles of 75 weight % or more, the metal nanoparticles are chemically modified by a protective agent having a main chain of organic molecule comprising a carbon backbone of carbon number of 1 to 3, and the metal nanoparticles contains 70% or more in number-average of metal nanoparticles having a primary grain size within a range of 10 to 50 nm.
    Type: Grant
    Filed: March 20, 2007
    Date of Patent: August 26, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventors: Toshiharu Hayashi, Yoshiaki Takata, Kazuhiko Yamasaki
  • Patent number: 8815631
    Abstract: A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.
    Type: Grant
    Filed: May 25, 2010
    Date of Patent: August 26, 2014
    Assignee: SunPower Corporation
    Inventor: Peter John Cousins
  • Patent number: 8809670
    Abstract: A solar energy module is provided and includes a substrate comprising at least one light diffusion layer and a plurality of light guiding layers adjacent to the light diffusion layer, and solar chips disposed on the lateral surfaces of the substrate. Solar light enters the substrate and is diffused by the light diffusion layer, and the diffused solar light is reflected by an interface of the light diffusion layer and the light guiding layer and is collected by the solar chips. A part of the solar light enters the light guiding layers and is reflected by the interface of the light guiding layers, and the reflected light is collected by the solar chips.
    Type: Grant
    Filed: November 28, 2009
    Date of Patent: August 19, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Ruei-Tang Chen, Gan-Lin Hwang, Ping-Yuan Tsai, Joseph Lik-Hang Chau
  • Patent number: 8809675
    Abstract: A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode, a second collecting electrode and a reflector. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along the straight line. The P-N junction cells are arranged in series along a straight line. The number of the inner electrodes is M?1. At least one inner electrode includes a carbon nanotube array. A photoreceptive surface is parallel to the straight line. A reflector is located on an emitting surface opposite to the photoreceptive surface.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: August 19, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yuan-Hao Jin, Qun-Qing Li, Shou-Shan Fan
  • Publication number: 20140224323
    Abstract: Provided are a solar cell sheet and a heat treatment process thereof The heat treatment process includes: a) sifting from solar cell sheets after printed and sintered cell sheets with conversion efficiency lower than 18% and filling factor thereof higher than 70%; h) performing low temperature annealing on the sifted cell sheets; c) sifting from the cell sheets after low temperature annealing cell sheets with lowered filling factor; d) re-sintering the sifted cell sheets; and e) sifting from the re-sintered cell sheets cell sheets with conversion efficiency lower than 18% and returning back to b) until most or all of the sifted meet demands.
    Type: Application
    Filed: March 6, 2012
    Publication date: August 14, 2014
    Applicants: YINGLI ENERGY (CHINA) COMPANY LIMITED, BAODING JIASHENG PHOTOVOLTAIC TECHNOLOGY CO., LTD., YINGLI GROUP COMPANY LIMITED
    Inventors: Hongfang Wang, Jingfeng Xiong, Zhiyan Hu, Gaofei Li, Haijiao An, Quanqing Yu, Wei Liu, Hao Lei
  • Patent number: 8802972
    Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: August 12, 2014
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Min-Seok Oh, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
  • Publication number: 20140216524
    Abstract: Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 ?m and, for example, is made from low grade Si.
    Type: Application
    Filed: February 5, 2014
    Publication date: August 7, 2014
    Inventors: John A. ROGERS, Angus A. ROCKETT, Ralph NUZZO, Jongseung YOON, Alfred BACA
  • Publication number: 20140216551
    Abstract: Provided is a polymer solar cell. The polymer solar cell includes a photoactive layer having a network-structured electron donor layer and a silica thin film layer surrounding the electron donor layer. By mixing of electron donor polymers, electron acceptor polymers, and block copolymers, the electron donor polymers form polymer grains through a self-assembly process. In addition, during a heat treatment process, silica precursors included in the block copolymers cross-link to each other to form the silica thin film. Electrons generated in the electron donor layer tunnel through the silica thin film, and holes are blocked by the silica thin film. Accordingly, electron-hole recombination in the electron acceptor layer is prevented.
    Type: Application
    Filed: September 13, 2013
    Publication date: August 7, 2014
    Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji Woong PARK, Min Gu Han, Hyung Soo Kim
  • Patent number: 8796542
    Abstract: An encapsulant material with enhanced light reflectivity, a crystalline silicon photovoltaic module and a thin film photovoltaic module are provided. The encapsulant material has a porous structure therein, and an average pore diameter of the porous structure is between several hundreds of nanometers and several hundreds of micrometers, so that the light reflectance of the encapsulant material is improved. Moreover, the encapsulant material is crosslinked by a physical or chemical crosslinking method, so heat resistance thereof is improved. Therefore, the encapsulant material is suitable for the crystalline silicon photovoltaic module and the thin film photovoltaic module, so as to increase power conversion efficiency of these modules.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: August 5, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Lee-May Huang, Cheng-Yu Peng, Wen-Chung Liang, Chun-Heng Chen
  • Patent number: 8796537
    Abstract: A solar cell includes a back electrode, a silicon substrate, a doped silicon layer and an upper electrode. The back electrode is located on and electrically connected to a lower surface of the silicon substrate. A number of cavities are formed on an upper surface of the silicon substrate. The doped silicon layer is located on the inside surface of the cavities. The upper electrode is located on the upper surface of the silicon substrate. The upper electrode includes a carbon nanotube structure.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: August 5, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
  • Patent number: 8790957
    Abstract: Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: July 29, 2014
    Assignee: SunPower Corporation
    Inventors: Bo Li, David Smith, Peter Cousins
  • Patent number: 8785218
    Abstract: A solar cell system making method includes steps of making a round P-N junction preform by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; stacking the plurality of P-N junction preforms along a first direction and forming an electrode layer between each adjacent two of the plurality of P-N junction preforms; and forming a first collection electrode on a first of the plurality of P-N junction preforms and forming a second collection electrode on a last of the plurality of P-N junction preforms to form a cylindrical solar cell system. Further, a step of cutting the cylindrical solar cell system can be performed.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: July 22, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yuan-Hao Jin, Qun-Qing Li, Shou-Shan Fan
  • Patent number: 8785232
    Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: July 22, 2014
    Assignee: First Solar, Inc.
    Inventors: Gang Xiong, Rick C. Powell, Aaron Roggelin, Kuntal Kumar, Arnold Allenic, Kenneth M. Ring, Charles E. Wickersham