Patent number: 8716589
Abstract: A p- or n-conductive semiconductor material comprises a compound of the general formula (I) Pb1?(x1+x2+ . . . +xn)A1x1A2x2 . . . AnxnTe1+z??(I) where: in each case independently n is the number of chemical elements different from Pb and Te 1 ppm?x1 . . . xn?0.05 ?0.05?z?0.05 and n?2 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or n=1 A1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.
Type:
Grant
Filed:
January 29, 2007
Date of Patent:
May 6, 2014
Assignee:
BASF Aktiengesellschaft
Inventor:
Frank Haass