Progressive Patents (Class 139/240)
  • Patent number: 8716589
    Abstract: A p- or n-conductive semiconductor material comprises a compound of the general formula (I) Pb1?(x1+x2+ . . . +xn)A1x1A2x2 . . . AnxnTe1+z??(I) where: in each case independently n is the number of chemical elements different from Pb and Te 1 ppm?x1 . . . xn?0.05 ?0.05?z?0.05 and n?2 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or n=1 A1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.
    Type: Grant
    Filed: January 29, 2007
    Date of Patent: May 6, 2014
    Assignee: BASF Aktiengesellschaft
    Inventor: Frank Haass