Treatment In A Magnetic Field Patents (Class 148/108)
  • Patent number: 7089648
    Abstract: There is provided a magnetoresistive head which can realize high sensitivity and low noise even when the reading track is being reduced. Longitudinal biasing is performed to a ferromagnetic free layer whose magnetization is rotated according to an external magnetic field by providing unidirectional magnetic anisotropy by exchange coupling to an antiferromagnetic layer. A hard magnetic film is arranged at the edge of a magnetoresistive film to reduce an effective reading track width.
    Type: Grant
    Filed: July 23, 2004
    Date of Patent: August 15, 2006
    Assignee: Hitachi, Ltd.
    Inventors: Kenichi Meguro, Hisashi Kimura, Katsuro Watanabe
  • Patent number: 7068478
    Abstract: Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to an overall improvement in the device performance. Another key advantage of this structure is that the magnetic annealing requirements (to establish antiparallelism between AP1 and AP2) can be significantly relaxed.
    Type: Grant
    Filed: July 31, 2003
    Date of Patent: June 27, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Min Li, Kunliang Zhang, Rachid Sbiaa, Cheng T. Horng, Simon Liao, Kochan Ju
  • Patent number: 7063753
    Abstract: Present invention provides enabling techniques of integrating novel nanotube elements into semiconductor devices, particularly in transistors, as gate channels or/and as interconnects. This is done in a series of process steps, which consist of fabricating magnetic-core-containing nanotubes of selected size (diameter and length), filtration of nanotube powders, preparing nanotube precursor in aqueous chemicals to form colloidal solutions of proper concentration, dispersing nanotube-containing solutions onto wafer surface, and finally positioning nanotubes at desired locations by magnetic means to complete nanotube device structure. The key to this invention is to provide miniature nanotubes with tangible physical properties, in this case, magnetic properties, so that they can be aligned, filtered, and precisely directed to desired locations for device application. Such processes enable nanotubes to be compatible with typical semiconductor wafer processing technologies.
    Type: Grant
    Filed: July 1, 2003
    Date of Patent: June 20, 2006
    Inventors: Yingjian Chen, Xiaozhong Dang
  • Patent number: 7063752
    Abstract: A method for refining the grain size of alloys which undergo ferromagnetic to paramagnetic phase transformation and an alloy produced therefrom. By subjecting the alloy to a timed application of a strong magnetic field, the temperature of phase boundaries can be shifted enabling phase transformations at lower temperatures.
    Type: Grant
    Filed: December 9, 2002
    Date of Patent: June 20, 2006
    Assignee: ExxonMobil Research and Engineering Co.
    Inventors: Jayoung Koo, Shiun Ling, Michael John Luton, Hans Thomann, Narasimha-Rao Venkata Bangaru
  • Patent number: 7045092
    Abstract: A perpendicular pressing/compacting method for a rare-earth alloy powder is provided to produce a sintered magnet with excellent magnetic properties. A method for pressing a rare-earth alloy powder by using a die is provided. The die is made of a non-magnetic material and has a die hole to define a cavity and a pair of yoke members provided on both sides of the cavity. The method includes the steps of: providing the rare-earth alloy powder; filling the cavity of the die with the rare-earth alloy powder; and compressing the rare-earth alloy powder, loaded in the cavity, between a pair of opposed press surfaces. A pulse magnetic field substantially perpendicular to a compressing direction is not applied until the apparent density of the rare-earth alloy powder in the cavity reaches a predetermined value, at least equal to 47% of the true density thereof, while the compressing step is being carried out.
    Type: Grant
    Filed: April 4, 2003
    Date of Patent: May 16, 2006
    Assignee: Neomax Co., Ltd.
    Inventors: Atsushi Ogawa, Shuhei Okumura
  • Patent number: 6918965
    Abstract: A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a NĂ©el temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.
    Type: Grant
    Filed: August 28, 2002
    Date of Patent: July 19, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Mark E. Tuttle, Ronald A. Weimer
  • Patent number: 6901652
    Abstract: A method for manufacturing magnetic sensing elements for use in magnetic sensors and hard disks. A ferromagnetic layer and a second antiferromagnetic layer are deposited on a nonmagnetic layer having a uniform thickness. The second antiferromagnetic layer is milled to form an indent. The resulting magnetic sensing element has a free magnetic layer reliably set in a single-magnetic-domain state in the track width direction.
    Type: Grant
    Filed: July 11, 2002
    Date of Patent: June 7, 2005
    Assignee: Alps Electric Co., Ltd.
    Inventors: Naoya Hasegawa, Eiji Umetsu
  • Patent number: 6878305
    Abstract: Coupling components to an underlying substrate using a composition of a polymer and magnetic material particles. Upon applying the composition between the component and the printed circuit board, the composition may be subjected to a magnetic field to align the magnetic material particles into a conductive path between the component and the underlying substrate. At the same time the polymer-based material may be cured or otherwise solidified to affix the conductive path formed by the magnetic material particles.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: April 12, 2005
    Assignee: Intel Corporation
    Inventors: George Hsieh, Terrance J. Dishongh, Norman J. Armendariz, David V. Spaulding
  • Patent number: 6873239
    Abstract: A bulk amorphous metal inductive device comprises a magnetic core having at least one low-loss bulk ferromagnetic amorphous metal magnetic component forming a magnetic circuit having an air gap therein. The component comprises a plurality of similarly shaped layers of amorphous metal strips bonded together to form a polyhederally shaped part. The device has one or more electrical windings and is easily customized for specialized magnetic applications, e.g. for use as a transformer or inductor in power conditioning electronic circuitry employing switch-mode circuit topologies and switching frequencies ranging from 1 kHz to 200 kHz or more. The low core losses of the device, e.g. a loss of at most about 12 W/kg when excited at a frequency of 5 kHz to a peak induction level of 0.3 T, make it especially useful at frequencies of 1 kHz or more.
    Type: Grant
    Filed: November 1, 2002
    Date of Patent: March 29, 2005
    Assignee: Metglas Inc.
    Inventors: Nicholas J. Decristofaro, Gordon E. Fish, Ryusuke Hasegawa, Carl E. Kroger, Scott M. Lindquist, Seshu V. Tatikola
  • Publication number: 20040223266
    Abstract: A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
    Type: Application
    Filed: May 28, 2004
    Publication date: November 11, 2004
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventor: Min Li
  • Publication number: 20040194857
    Abstract: A ferromagnetic resonator for use in a marker in a magnetomechanical electronic article surveillance system has improved magnetoresonant properties and/or reduced eddy current losses by virtue of being annealed so that the resonator has a fine domain structure with a domain width less than about 40 ÿm, or less than about 1.5 times the thickness of the resonator. This produces in the resonator an induced magnetic easy axis which is substantially perpendicular to the axis along which the resonator is operated magnetically by a magnetic bias element also contained in the marker.
    Type: Application
    Filed: April 23, 2004
    Publication date: October 7, 2004
    Inventor: Giselher Herzer
  • Publication number: 20040187964
    Abstract: Thus, as shown by an exact electrodynamic computation of EMBF and the estimations described above of the velocity of turbulent flows arising due to their effect, application of amplitude- and frequency-modulated helically traveling (rotating and axially traveling) electromagnetic fields in metallurgical and chemical technologies and foundry can considerably increase the hydraulic efficiency of MHD facilities, intensify the processes of heat and mass transfer in technological plants, significantly increase their productivity, considerably decrease energy consumption for the production of metals, alloys, cast articles, and chemical products, and improve their quality.
    Type: Application
    Filed: December 16, 2003
    Publication date: September 30, 2004
    Inventors: Irving I. Dardik, Arkady K. Kapusta, Boris M. Mikhailovich, Ephim G. Golbraikh, Shaul L. Lesin, Herman D. Branover
  • Publication number: 20040182479
    Abstract: A method is provided for preserving the transverse biasing of a GMR (or MR) read head during back-end processing. In a first preferred embodiment, the method comprises magnetizing the longitudinal biasing layers of the read head in a transverse direction, so that the resulting field at the position of the transverse biasing layer places it in a minimum of potential energy which stabilizes its direction. The field of the longitudinal biasing layer is then reset to the longitudinal direction in a manner which maintains the transverse biasing direction. In a second embodiment, a novel fixture for mounting the read head during processing includes a magnetic portion which stabilizes the transverse bias of the read head. The two methods may be used singly or in combination.
    Type: Application
    Filed: March 21, 2003
    Publication date: September 23, 2004
    Applicant: Headway Technologies, Inc.
    Inventors: Yimin Guo, Li-Yan Zhu
  • Publication number: 20040165317
    Abstract: A specified amount of N2O or N2 is employed in a process gas of a DC magnetron for sputter depositing single or laminated films of NiFeCo—O—N or NiFeCo—N with a high uniaxial anisotropy HK after annealing these films along their hard axes. The films can be used for shield layers and/or pole piece layers in a magnetic head.
    Type: Application
    Filed: February 26, 2004
    Publication date: August 26, 2004
    Inventor: John David Westwood
  • Patent number: 6779248
    Abstract: In bottom spin valves of the lead overlay type the longitudinal bias field that stabilizes the device tends to fall off well before the gap is reached. This problem has been overcome by providing a manufacturing process that includes inserting an additional antiferromagnetic layer between the hard bias plugs and the overlaid leads. This additional antiferromagnetic layer and the lead layer are etched in the same operation to define the read gap, eliminating the possibility of misalignment between them. The extra antiferromagnetic layer is also longitudinally biased so there is no falloff in bias strength before the edge of the gap is reached. A process for manufacturing the device is also described.
    Type: Grant
    Filed: March 7, 2002
    Date of Patent: August 24, 2004
    Assignee: Headway Technologies, Inc.
    Inventors: Moris M. Dovek, Tai Min
  • Publication number: 20040160708
    Abstract: A GMR sensor comprising a sensor element having a spin valve configuration with a synthetic antiferromagnetic pinned layer and further comprising a ferromagnetic free layer biased by synthetic exchange biasing in a direction canted relative to the air bearing surface plane of the sensor. The resulting GMR sensor has a stable free layer domain structure, stable bias point and a wide dynamic range.
    Type: Application
    Filed: February 13, 2003
    Publication date: August 19, 2004
    Applicant: Headway Technologies, Inc.
    Inventors: Youfeng Zheng, Kochan Ju, Min Li, Ben Hu
  • Patent number: 6773513
    Abstract: A method using of a magnetic field to affect residual stress relief or phase transformations in a metallic material is disclosed. In a first aspect of the method, residual stress relief of a material is achieved at ambient temperatures by placing the material in a magnetic field. In a second aspect of the method, retained austenite stabilization is reversed in a ferrous alloy by applying a magnetic field to the alloy at ambient temperatures.
    Type: Grant
    Filed: August 13, 2002
    Date of Patent: August 10, 2004
    Assignee: UT-Battelle LLC
    Inventor: Gerard M. Ludtka
  • Patent number: 6770242
    Abstract: Permanent magnet for voice coil actuator motors used to actuate head-arm assemblies in small form disk drives are produced from a dispersion of prealloyed rare earth magnetic particles in a thermoplastic binder. Upon shaping of green parts the magnetic axis of the particles is aligned with the field lines of a magnetic field. Following extraction of the binder the green parts are sintered to net shape. Improved magnetic properties, smaller dimensions, better than tolerances and 100% material utilization are claimed.
    Type: Grant
    Filed: April 26, 2002
    Date of Patent: August 3, 2004
    Inventors: Romain L. Billiet, Hanh T. Nguyen
  • Patent number: 6760966
    Abstract: As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome in a process of manufacturing a device by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: July 13, 2004
    Assignee: Headway Technologies, Inc.
    Inventors: Po Kang Wang, Moris Dovek, Jibin Geng, Tai Min
  • Publication number: 20040112467
    Abstract: To avoid various problems caused by remnant magnetization and produce an anisotropic bonded magnet at a reduced cost, a method for producing an anisotropic bonded magnet by feeding a magnetic powder (such as an HDDR powder) into the cavity of a press machine and compacting it is provided. A weak magnetic field is created as a static magnetic field in a space including the cavity by using a magnetic member that is steadily magnetized. The magnetic powder being transported into the cavity is aligned parallel to the direction of the weak magnetic field. Next, the magnetic powder is compressed in the cavity, thereby obtaining a compact.
    Type: Application
    Filed: October 9, 2003
    Publication date: June 17, 2004
    Inventors: Shuji Mino, Noboru Nakamoto, Tsutomu Harada
  • Publication number: 20040095690
    Abstract: Magnetic tunnel junction (MTJ) and charge perpendicular-to-plane (CPP) magnetic sensors are disclosed which have a first antiferromagnetic layer for pinning the magnetization direction in a pinned layer and a second antiferromagnetic layer for providing bias stabilization of a free layer. The two antiferromagnetic layers may be formed from the same material and using a spin-flop effect may be initialized simulataneously. A disk drive using these sensors is disclosed.
    Type: Application
    Filed: October 24, 2003
    Publication date: May 20, 2004
    Inventor: Robert S. Beach
  • Patent number: 6721145
    Abstract: A method of initializing a magnetic sensor having two antiferromagnetic layers is described. The method takes advantage of the spin flop effect such that the two antiferromagnetic layers may be orthogonally initialized. The signal polarity of the sensor is well controlled.
    Type: Grant
    Filed: January 2, 2002
    Date of Patent: April 13, 2004
    Assignee: International Business Machines Corporation
    Inventor: Robert S. Beach
  • Publication number: 20040047089
    Abstract: A transducing head includes a first bias element, a second bias element, and a magnetoresistive sensor positioned between the first bias element and the second bias element. The first bias element and the second bias element are each formed of a permanent magnet material having a remanent magnetic moment in a range of about 200 to about 800 emu/cm3. In a preferred embodiment, the permanent magnet material is an alloy comprising iron, platinum, and at least one material selected from copper, silver, magnesium, lead, zinc, bismuth, and antimony.
    Type: Application
    Filed: June 18, 2003
    Publication date: March 11, 2004
    Applicant: Seagate Technology LLC
    Inventors: Eric W. Singleton, David J. Larson, Christopher L. Platt, Kurt W. Wierman, James K. Howard
  • Publication number: 20040042129
    Abstract: A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal.
    Type: Application
    Filed: June 9, 2003
    Publication date: March 4, 2004
    Inventors: Tetsuya Mizuguchi, Masanori Hosomi, Kazuhiro Ohba, Kazuhiro Beesho, Yutaka Higo, Tetsuya Yamamoto, Takeyuki Sone, Hiroshi Kano
  • Publication number: 20040040628
    Abstract: A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Néel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.
    Type: Application
    Filed: August 28, 2002
    Publication date: March 4, 2004
    Inventors: Mark E. Tuttle, Ronald A. Weimer
  • Publication number: 20040031542
    Abstract: A method using of a magnetic field to affect residual stress relief or phase transformations in a metallic material is disclosed. In a first aspect of the method, residual stress relief of a material is achieved at ambient temperatures by placing the material in a magnetic field. In a second aspect of the method, retained austenite stabilization is reversed in a ferrous alloy by applying a magnetic field to the alloy at ambient temperatures.
    Type: Application
    Filed: August 13, 2002
    Publication date: February 19, 2004
    Inventor: Gerard M. Ludtka
  • Patent number: 6690279
    Abstract: The invention is directed to a security element for the electronic surveillance of articles. This security element is detected by surveillance systems operating in different frequency ranges and it includes at least two materials of high permeability which, when excited by an external alternating magnetic field emit each a characteristic signal. The maximum signal components of the two materials lie in different frequency ranges and the signal components of the one material are negligibly ow in that particular frequency range in which the signal component of the other material is at a maximum level. The invention also relates to surveillance systems that incorporate these security elements.
    Type: Grant
    Filed: January 28, 2000
    Date of Patent: February 10, 2004
    Assignees: Meto International GmbH, Sensormatic Electronics Corp.
    Inventors: Manfred Ruhrig, David Stocks, Hubert A. Patterson, Gregory N. Mears
  • Publication number: 20040016477
    Abstract: A magnetic alloy raw material is heated and melted to create a melt with floating said raw material by means of electromagnetic field from an inductive type heating coil. The melt is located in between a pair of cupper cooling plates driven by a solenoid coil, and then, splat-cooled below the peritectic point of the raw material by the cooling plates.
    Type: Application
    Filed: March 26, 2003
    Publication date: January 29, 2004
    Applicant: The Institute of Space and Astronautical Science
    Inventor: Kazuhiko Kuribayashi
  • Publication number: 20040012898
    Abstract: A spin-valve thin-film magnetic element includes a substrate, a laminate formed on the substrate, biasing layers, and conductive layers. The laminate includes a free magnetic layer; a first nonmagnetic conductive layer, a first pinned magnetic layer and a first antiferromagnetic layer deposited on the upper surface, away from the substrate, of the free magnetic layer; a second nonmagnetic conductive layer, a second pinned magnetic layer and a second antiferromagnetic layer deposited on the lower surface, near the substrate, of the free magnetic layer. The biasing layers orients the magnetization vector of the free magnetic layer in a direction perpendicular to the magnetization vector of the pinned magnetic layers, and the conductive layers supplies a sensing current to the free magnetic layer. The first antiferromagnetic layer adjoining the first pinned magnetic layer fixes the magnetization vector of the first pinned magnetic layer in one direction.
    Type: Application
    Filed: July 10, 2003
    Publication date: January 22, 2004
    Applicant: ALPS Electric Co., Ltd.
    Inventor: Naoya Hasegawa
  • Patent number: 6645314
    Abstract: A ferromagnetic resonator for use in a marker in a magnetomechanical electronic article surveillance system is manufactured at reduced cost by being continuously annealed with a tensile stress applied along the ribbon axis and by providing an amorphous magnetic alloy containing iron, cobalt and nickel and in which the portion of cobalt is less than about 4 at %.
    Type: Grant
    Filed: October 2, 2000
    Date of Patent: November 11, 2003
    Assignees: Vacuumschmelze GmbH, Sensormatic Electronics Corp.
    Inventors: Giselher Herzer, Nen-Chin Liu
  • Publication number: 20030205295
    Abstract: A magnetic powder core comprises a molded article of a mixture of a glassy alloy powder and an insulating material. The glassy alloy comprises Fe and at least one element selected from Al, P, C, Si, and B, and has a texture primarily composed of an amorphous phase. The glassy alloy exhibits a temperature difference &Dgr;Tx, which is represented by the equation &Dgr;Tx=Tx−Tg, of at least 20 K in a supercooled liquid, wherein Tx indicates the crystallization temperature and Tg indicates the glass transition temperature. The magnetic core precursor is produced mixing the glassy alloy powder with the insulating material, compacting the mixture to form a magnetic core precursor, and annealing the magnetic core precursor at a temperature in the range between (Tg−170) K and Tg K to relieve the internal stress of the magnetic core precursor. The glassy alloy exhibits low coercive force and low core loss.
    Type: Application
    Filed: May 20, 2003
    Publication date: November 6, 2003
    Inventors: Shoji Yoshida, Hidetaka Kenmotsu, Takao Mizushima, Kazuaki Ikarashi, Yutaka Naito
  • Publication number: 20030202295
    Abstract: As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.
    Type: Application
    Filed: April 30, 2002
    Publication date: October 30, 2003
    Applicant: Headway Technologies, Inc.
    Inventors: Po Kang Wang, Moris Dovek, Jibin Geng, Tai Min
  • Publication number: 20030201031
    Abstract: Disclosed are methods for producing compositionally modified sintered RE—Fe—B-based rare earth permanent magnets, by the addition of small amounts of Nd, Cu, Ti, Nb, or other transition metals, and mixtures thereof, to maximize fracture toughness with corresponding improved machinability, while maintaining maximum energy product, said method comprising the steps of:
    Type: Application
    Filed: November 13, 2002
    Publication date: October 30, 2003
    Applicants: Electron Energy Corporation, University of Dayton
    Inventors: Shiqiang Liu, Jinfang Liu
  • Publication number: 20030197983
    Abstract: A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
    Type: Application
    Filed: April 17, 2002
    Publication date: October 23, 2003
    Applicant: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Mao-Min Chen, Chen-Jung Chien, Cherng-Chyi Han, Ru-Ying Tong, Chyu-Jiuh Torng, Hui-Chuan Wang
  • Publication number: 20030184918
    Abstract: A dual spin valve (SV) sensor is provided with a longitudinal bias stack sandwiched between a first SV stack and a second SV stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second SV stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second SV stacks.
    Type: Application
    Filed: April 2, 2002
    Publication date: October 2, 2003
    Applicant: International Business Machines Corporation
    Inventors: Tsann Lin, Daniele Mauri
  • Publication number: 20030179517
    Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
    Type: Application
    Filed: March 22, 2002
    Publication date: September 25, 2003
    Applicant: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Min Li, Ru-Ying Tong, Yun-Fei Li, You Feng Zheng, Simon Liao, Kochan Ju, Cherng Chyi Han
  • Publication number: 20030179519
    Abstract: A magnetic sensing element having a reduced electrical resistance and a large exchange anisotropic magnetic field between a free layer and antiferromagnetic layers for exchange biasing is provided. The magnetic sensing element includes second antiferromagnetic layers and a free magnetic layer, and the length of the second antiferromagnetic layers in a height direction in side regions disposed at the lateral sides of a track width region is larger than the length of the free magnetic layer in the height direction in the track width region.
    Type: Application
    Filed: January 16, 2003
    Publication date: September 25, 2003
    Inventor: Naoya Hasegawa
  • Publication number: 20030179512
    Abstract: A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.
    Type: Application
    Filed: March 19, 2002
    Publication date: September 25, 2003
    Applicant: Headway Technologies, Inc.
    Inventors: Kochan Ju, Youfeng Zheng, Mao-Min Chen, Cherng-Chyi Han, Charles Lin
  • Publication number: 20030169541
    Abstract: In bottom spin valves of the lead overlay type the longitudinal bias field that stabilizes the device tends to fall off well before the gap is reached. This problem has been overcome by inserting an additional antiferromagnetic layer between the hard bias plugs and the overlaid leads. This additional antiferromagnetic layer and the lead layer are etched in the same operation to define the read gap, eliminating the possibility of misalignment between them. The extra antiferromagnetic layer is also longitudinally biased so there is no falloff in bias strength before the edge of the gap is reached. A process for manufacturing the device is also described.
    Type: Application
    Filed: March 7, 2002
    Publication date: September 11, 2003
    Applicant: Headway Technologies, Inc.
    Inventors: Moris M. Dovek, Tai Min
  • Publication number: 20030156361
    Abstract: A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagnetic free layer (F1) and the ferromagnetic biasing layer (F2) which enables the optimal thicknesses of those layers to be determined for a wide range of ferromagnetic materials and exchange coupling materials. The relationship to be satisfied is MF2/MF1=(Js+Jex)/Js, where Js is the synthetic coupling energy between F1 and F2 and Jex is the exchange energy between F2 and an overlaying antiferromagnetic pinning layer. An alternative embodiment omits the overlaying antiferromagnetic pinning layer which causes the relationship to become MF2/MF1=1.
    Type: Application
    Filed: February 15, 2002
    Publication date: August 21, 2003
    Inventors: Min Li, You Feng Zheng, Simon Liao, Kochan Ju
  • Publication number: 20030155039
    Abstract: A method for refining the grain size of alloys which undergo ferromagnetic to paramagnetic phase transformation and an alloy produced therefrom. By subjecting the alloy to a timed application of a strong magnetic field, the temperature of phase boundaries can be shifted enabling phase transformations at lower temperatures. 1 Applicants: Jayoung Koo Shiun Ling Michael J. Luton Hans Thomann Narasimha-Rao V.
    Type: Application
    Filed: December 9, 2002
    Publication date: August 21, 2003
    Inventors: Jayoung Koo, Shiun Ling, Michael John Luton, Hans Thomann, Narasimha-Rao Venkata Bangaru
  • Patent number: 6599468
    Abstract: The present invention provides a powder compacting apparatus including: a die having a through hole forming a cavity; a first punch and a second punch for pressing a rare-earth alloy magnetic powder filled in the cavity; and a magnetic field generator for applying an orientation magnetic field parallel to a pressing direction through the rare-earth alloy magnetic powder in the cavity, wherein at least one of the first and second punches and has a curved pressing surface, and the pressing surface is given a shape such as to suppress the movement of particles of the rare-earth alloy magnetic powder along the pressing surface during the pressing step.
    Type: Grant
    Filed: March 28, 2001
    Date of Patent: July 29, 2003
    Assignee: Sumitomo Special Metals Co., Ltd.
    Inventors: Shuichi Okuyama, Tsutomu Harada, Takashi Tajiri
  • Publication number: 20030133232
    Abstract: A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
    Type: Application
    Filed: January 16, 2002
    Publication date: July 17, 2003
    Applicant: Headway Technologies, Inc.
    Inventors: Min Li, Simon H. Liao, Masashi Sano, Kiyoshi Noguchi, Kochan Ju, Cheng T. Horng
  • Publication number: 20030123198
    Abstract: First and second magneto-resistive effect elements (1) and (2) of a current perpendicular to plane type having magnetic flux sensing films are laminated through a nonmagnetic intermediate gap layer (3) in such a manner that their magnetic flux sensing films are located close to each other. Then, magneto-resistive change characteristics are caused to become opposite to each other so that a differential output between the output of the first and second magneto-resistive effect elements may be generated as a magnetic sensor output or a differential output between the output of the first and second magneto-resistive effect elements may be generated as a differential output in an external circuit configuration. In this manner, a resolution can be improved by a configuration in which a gap length, which decides a resolution, may not be restricted by a thickness of a magneto-resistive effect element. Therefore, restrictions imposed on the resolution in the MR magnetic sensor can be improved.
    Type: Application
    Filed: August 30, 2002
    Publication date: July 3, 2003
    Inventors: Nobuhiro Sugawara, Masatoshi Yoshikawa, Hiroyuki Ohmori
  • Publication number: 20030121565
    Abstract: A method of initializing a magnetic sensor having two antiferromagnetic layers is described. The method takes advantage of the spin flop effect such that the two antiferromagnetic layers may be orthogonally initialized. The signal polarity of the sensor is well controlled.
    Type: Application
    Filed: January 2, 2002
    Publication date: July 3, 2003
    Inventor: Robert S. Beach
  • Patent number: 6551416
    Abstract: A ferromagnetic resonator for use in a marker in a magnetomechanical electronic article surveillance system has improved magnetoresonant properties and/or reduced eddy current losses by virtue of being annealed so that the resonator has a fine domain structure with a domain width less than about 40 &mgr;m, or less than about 1.5 times the thickness of the resonator. This produces in the resonator an induced magnetic easy axis which is substantially perpendicular to the axis along which the resonator is operated magnetically by a magnetic bias element also contained in the marker.
    Type: Grant
    Filed: November 1, 2000
    Date of Patent: April 22, 2003
    Assignee: Vacuumschmelze GmbH
    Inventor: Giselher Herzer
  • Patent number: 6522507
    Abstract: A method for fabricating a single top spin valve head that is capable of reading ultra-high density recordings. Said top spin valve has a CoFe free layer for high GMR ratio, which is grown on a NiCr/Ru layer to provide better magnetic properties and has a ferromagnetically coupled CoFe/NiCr/CoFe laminated pinned layer for thermal stability and robustness.
    Type: Grant
    Filed: May 12, 2000
    Date of Patent: February 18, 2003
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Min Li, Ru-Ying Tong
  • Publication number: 20030029520
    Abstract: In order to dampen magnetization changes in magnetic devices, such as magnetic tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.
    Type: Application
    Filed: July 15, 2002
    Publication date: February 13, 2003
    Applicant: International Business Machines Corporation
    Inventors: Snorri T. Ingvarsson, Roger H. Koch, Stuart S.P. Parkin, Gang Xiao
  • Patent number: 6517744
    Abstract: A heat-conductive sheet comprising a cured or semi-cured binder wherein a carbon fiber is orientated in the direction of the thickness of the heat-conductive sheet. This heat-conductive sheet exhibits a high anisotropic heat conductivity along the direction of the thickness thereof to thereby enable efficiently releasing heat from a heating element such as a semiconductor element or semiconductor package. Moreover, the heat-conductive sheet is excellent in not only heat resistance, durability and mechanical strength but also adherence to the heating element.
    Type: Grant
    Filed: November 14, 2000
    Date of Patent: February 11, 2003
    Assignee: JSR Corporation
    Inventors: Takeo Hara, Shin-ichiro Iwanaga, Hozumi Sato, Ryoji Setaka
  • Publication number: 20030010405
    Abstract: Devices and methods employ FeGa alloys having excellent magnetostriction and good strength. Additionally, methods of producing preferentially oriented FeGa alloys are described.
    Type: Application
    Filed: July 24, 2002
    Publication date: January 16, 2003
    Inventors: Arthur E Clark, Marilyn Wun-Fogle, James B Restorff, Sivaraman Guruswamy