Green Sheets Patents (Class 148/DIG69)
  • Patent number: 5614043
    Abstract: The present invention relates to electronic components and in particular relates to ceramic-based electronic components wherein a portion of the component comprises a metal-infiltrated ceramic. In a preferred embodiment, the metal-infiltrated ceramic comprises copper metal.
    Type: Grant
    Filed: March 31, 1994
    Date of Patent: March 25, 1997
    Assignee: Coors Ceramics Company
    Inventors: Marcus A. Ritland, Dennis W. Readey, Jack D. Sibold, James E. Stephan
  • Patent number: 5494836
    Abstract: The invention provides a heterojunction bipolar transistor which has a low reistance SiGe base and is high in current gain and cutoff frequency even at low temperatures near the liquid nitrogen temperature. The transistor fabrication process comprises forming an n-type collector layer on a silicon substrate and a dielectric film on the collector layer, forming a base electrode of p.sup.+ -type polysilicon having an opening on the dielectric film, isotropically etching the dielectric film on the collector layer by using the opening of the base electrode to form a window, forming an external base layer of p.sup.+ -type silicon on the collector layer exposed by the window, selectively etching the external base layer to form an aperture in a central region, forming a p-type SiGe intrinsic base layer in the aperture of the external base layer and then forming an n.sup.+ -type emitter on the intrinsic base layer.
    Type: Grant
    Filed: June 2, 1995
    Date of Patent: February 27, 1996
    Assignee: NEC Corporation
    Inventor: Kiyotaka Imai
  • Patent number: 5294567
    Abstract: The invention is directed to a method for rapidly forming a dense pattern of via holes in multilayer electronic circuits in which via holes in the dielectric layers are formed by drilling with an excimer laser under controlled operating conditions.
    Type: Grant
    Filed: October 8, 1993
    Date of Patent: March 15, 1994
    Assignee: E. I. Du Pont de Nemours and Company
    Inventors: Jay R. Dorfman, Richard R. Draudt, Thomas D. Lantzer, Arthur H. Mones, David L. Sutton
  • Patent number: 5252499
    Abstract: A wide band-gap semiconductor, such as a II-VI semiconductor having low bipolar resistivity and a method for producing such a semiconductor. To form this semiconductor, atomic hydrogen is used to neutralize compensating contaminants. Alternatively, the semiconductor dopant and hydrogen are introduced into the undoped semiconductor together, and later, the hydrogen is removed leaving an acceptably compensation free wide band-gap semiconductor.
    Type: Grant
    Filed: August 15, 1988
    Date of Patent: October 12, 1993
    Inventor: G. F. Neumark Rothschild
  • Patent number: 4948751
    Abstract: A method of selective epitaxial growth includes a step of selectively forming an insulator film on a predetermined region of a semiconductor substrate and a step of evaporating a starting material containing a Group III element in vacuum in the presence of a Group V element to grow epitaxially a III-V compound semiconductor selectively on the semiconductor substrate under the condition where the partial pressure of the Group III element just above the semiconductor substrate is greater than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the semiconductor substrate and is smaller than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the insulator film.When InAs is grown epitaxially and selectively on a GaAs substrate, the GaAs substrate is kept at to C.
    Type: Grant
    Filed: May 19, 1988
    Date of Patent: August 14, 1990
    Assignee: NEC Corporation
    Inventors: Akihiko Okamoto, Keiichi Ohata