With Mechanical Polishing (i.e., Cmp-chemical Mechanical Polishing) Patents (Class 156/345.12)
  • Patent number: 10875146
    Abstract: The invention provides a polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix, a thickness and a polishing track representing a working region of the polishing layer for polishing or planarizing. Radial drainage grooves extend through the polishing track facilitate polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: December 29, 2020
    Assignee: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS
    Inventors: Lee Melbourne Cook, Yuhua Tong, Joseph So, Jeffrey James Hendron, Patricia Connell
  • Patent number: 10804370
    Abstract: In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.
    Type: Grant
    Filed: January 19, 2018
    Date of Patent: October 13, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih Hung Chen, Kei-Wei Chen, Ying-Lang Wang
  • Patent number: 10665487
    Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: May 26, 2020
    Assignee: EBARA CORPORATION
    Inventors: Itsuki Kobata, Keita Yagi, Katsuhide Watanabe, Yoichi Shiokawa, Toru Maruyama, Nobuyuki Takahashi
  • Patent number: 10665449
    Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: May 26, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
  • Patent number: 10557201
    Abstract: The present invention provides a gas-phase growth apparatus in which an upper part of a circular susceptor 13 on the upper surface of which a substrate 17 is arranged is provided into a circular opening 12a formed at a bottom wall of the flow channel 12, while rotating the susceptor, the substrate is heated by a heater 14 provided under the susceptor through the susceptor, a reaction gas is supplied into the flow channel, and a thin film is produced on the substrate, wherein a rotation driving device 18 for rotating the susceptor is arranged in a state of surrounding the heater, and includes a cylindrical rotation member 19 for supporting the circumferential edge of the susceptor by the top end.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: February 11, 2020
    Assignee: TAIYO NIPPON SANSO CORPORATION
    Inventor: Kazutada Ikenaga
  • Patent number: 10513008
    Abstract: Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) of substrates. In one embodiment, a carrier head for a CMP apparatus is disclosed herein. The carrier head includes a body, a retaining ring, and a sensor assembly. The retaining ring is coupled to the body. The sensor assembly is positioned at least partially in the body. The sensor assembly includes a transmitter, an antenna, and a vibrational sensor. The transmitter has a first end and a second end. The antenna is coupled to the first end of the transmitter. The vibrational sensor is coupled to the second end. The vibrational sensor is configured to detect vibration during chemical mechanical processes with respect to radial, azimuthal, and angular axes of the carrier head.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: December 24, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zubin Huang, Stephen A. Wells, Ramesh Gopalan, Gangadhar Sheelavant, Simon Yavelberg
  • Patent number: 10350726
    Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) system, and an associated method to perform a CMP process. In some embodiments, the CMP system has a rotatable wafer carrier configured to hold a wafer face down to be processed. The CMP system also has a polishing layer attached to a polishing platen and having a front surface configured to interact with the wafer to be processed, and a CMP dispenser configured to dispense a slurry between an interface of the polishing layer and the wafer. The slurry contains charged abrasive particles therein. The CMP system also has a film electrode attached to a back surface of the polishing layer opposite to the front surface. The film electrode is configured to affect movements of the charged abrasive particles through applying an electrical field during the operation of the CMP system.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: July 16, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Wei Liang, Hsun-Chung Kuang, Yen-Chang Chu
  • Patent number: 10354903
    Abstract: Provided is a load port capable of loading and unloading a substrate by a transfer robot in a state where a purge gas atmosphere is maintained inside a substrate storage space. After the lid of the substrate storage container is opened, an opening portion of the substrate storage container is closed by a frame sealing a peripheral edge of the opening portion of the substrate storage container and a shutter portion where a plurality of shielding plates are disposed in a vertical direction at a third position which is further moved forward from a release position. The shutter portion can locally move all or a portion of the shielding plates to form a narrow opening portion (third opening portion), and transferring of the substrate in the state where an atmosphere of the substrate storage space is replaced is performed through the narrow opening portion (third opening portion).
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: July 16, 2019
    Assignee: RORZE CORPORATION
    Inventors: Katsunori Sakata, Hidekazu Okutsu
  • Patent number: 10293463
    Abstract: A CMP pad conditioner for conditioning a polishing pad. Various embodiments of the disclosure include a plurality of elongated protrusions which work a conditioned surface of a polishing pad at a variety of attack angles as the CMP pad conditioner engages the polishing pad. Because of the elongated geometry of the protrusions, the variety of attack angles will tend to flex the conditioned face of the polishing pad in a multifaceted manner. Such multifaceted manipulation of the conditioned face enhances the cut rate of the conditioner assembly and the removal of debris in the pores of the polishing pad that are residual from the CMP process, to better open the pores of the polishing pad and to better maintain the removal rate in the CMP process.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: May 21, 2019
    Assignee: Entegris, Inc.
    Inventors: Andrew Galpin, Daniel Wells
  • Patent number: 10293454
    Abstract: In one embodiment, a polishing head includes an elastic film configured to form pressure rooms to which a pressure fluid is fed, and configured to press a substrate onto a polishing surface with a fluid pressure of the pressure fluid. The head further includes a first magnetic generator provided above a partition wall that separates the pressure rooms. The head further includes a second magnetic generator configured to form at least a portion of the partition wall or provided below the partition wall.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: May 21, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Takayuki Nakayama, Takashi Watanabe
  • Patent number: 10286524
    Abstract: Disclosed is an ultrafine abrasive biopolymer soft polishing film having a base material, the base material including a high polymer base material formed by crosslinking, solidifying and drying a uniform mixture that include from 0.1-10 wt % of an ultrafine abrasive that is chemically coated with a coupling agent to provide a surface-modified ultrafine abrasive; from 5-15 wt % of a chemical additive for controlling dryness; and from 1-10 wt % of a biopolymer sol, wherein the coupling agent improves dispersion and holding of the surface-modified ultrafine abrasive in the high polymer base material, and a method of making the same.
    Type: Grant
    Filed: May 19, 2015
    Date of Patent: May 14, 2019
    Assignee: HUAQIAO UNIVERSITY
    Inventors: Jing Lu, Xipeng Xu, Hui Huang, Yunyun Song
  • Patent number: 10290516
    Abstract: Provided is a substrate processing apparatus which may update an accumulated film thickness of each dummy substrate when a dummy substrate carrier is reloaded. The substrate processing apparatus includes: a process chamber where a plurality of substrates including a dummy substrate are processed; a substrate receiving unit whereon a dummy substrate carrier accommodating at least the dummy substrate is placed; a memory unit configured to store a film thickness of the dummy substrate in the dummy substrate carrier when the dummy substrate carrier is unloaded from the substrate receiving unit; and a management unit configured to update the film thickness of the dummy substrate in the dummy substrate carrier based on the film thickness stored in the memory unit when the dummy substrate carrier is reloaded onto the substrate receiving unit.
    Type: Grant
    Filed: March 19, 2013
    Date of Patent: May 14, 2019
    Assignee: KOKUSAI ELECTRIC CORPOATION
    Inventors: Akihiko Yoneda, Hiroshi Kotani, Yasuhiro Mizuguchi
  • Patent number: 10153185
    Abstract: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: December 11, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Dale R. Du Bois, Bozhi Yang, Jianhua Zhou, Sanjeev Baluja, Amit Kumar Bansal, Juan Carlos Rocha-Alvarez
  • Patent number: 10106886
    Abstract: An object of the invention is to provide a coating apparatus for a resin container capable of improving mass-production efficiency of coating-treated resin containers. A plurality of container holding members, which are installed on a rotating table and can hold a resin container, are sequentially moved to a container supply position in which the resin container is supplied, a coating treatment position in which coating treatment of forming a thin film on an inner surface of the resin container is performed in a state of being combined with a chamber lid part, and a container detachment position in which the resin container to which the thin film is formed by the coating treatment can be detached according to the rotation of the rotating table, so that the treatments in the respective positions are performed in parallel.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: October 23, 2018
    Assignee: NISSEI ASB MACHINE CO., LTD.
    Inventor: Kiyonori Shimada
  • Patent number: 10096460
    Abstract: A semiconductor wafer has a base material. The semiconductor wafer may have an edge support ring. A grinding phase of a surface of the semiconductor wafer removes a portion of the base material. The grinder is removed from or lifted off the surface of the semiconductor wafer during a separation phase. The surface of the semiconductor wafer and under the grinder is rinsed during the grinding phase and separation phase to remove particles. A rinsing solution is dispensed from a rinsing solution source to rinse the surface of the semiconductor wafer. The rinsing solution source can move in position while dispensing the rinsing solution to rinse the surface of the semiconductor wafer. The grinding phase and separation phase are repeated during the entire grinding operation, when grinding conductive TSVs, or during the final grinding stages, until the final thickness of the semiconductor wafer is achieved.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: October 9, 2018
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Michael J. Seddon
  • Patent number: 10076826
    Abstract: The invention relates to obtaining an abrasive product comprising a surface with multiple abrasive zones supported by a backing layer. The abrasive zone are surrounded by interconnected channel portions comprising first channel portions with a first transverse dimension td1 and second channel portions with a second transverse dimension td2 larger than the first transverse dimension td1.
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: September 18, 2018
    Assignee: KWH MIRKA LTD
    Inventors: Beatriz Meana-Esteban, Göran Höglund, Hans Hede, Markus Kass, Mats Sundell
  • Patent number: 10037868
    Abstract: The plasma processing apparatus includes: a processing chamber disposed inside a vacuum vessel; a first high-frequency power supply outputting a first high-frequency power for supplying an electric field to generate a plasma for use in processing a sample to be processed inside the processing chamber; a sample stage disposed inside the processing chamber with the sample placed on an upper surface thereof; a second high-frequency power supply intermittently outputting a second high-frequency power for generating a bias potential to an electrode disposed inside the sample stage and capable of variably adjusting the output time; and a function to adjust operation of the plasma processing apparatus using a result of detection of a temporal change in waveform of current or voltage in a transient state of the second high-frequency power in synchronism with start of the intermittent output of the second high-frequency power.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: July 31, 2018
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Koji Toyota, Koichi Yamamoto, Naoki Yasui
  • Patent number: 9837341
    Abstract: Techniques and mechanisms for providing effective connectivity with surface level microbumps on an integrated circuit package substrate. In an embodiment, different metals are variously electroplated to form a microbump which extends through a surface-level dielectric of a substrate to a seed layer including copper. The microbump includes a combination of tin and zinc that mitigates precipitation of residual copper by promoting the formation of miconstituents in the microbump. In another embodiment, the microbump has a mass fraction of zinc, or a mass fraction of tin, that is different in various regions along a height of the microbump.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: December 5, 2017
    Assignee: Intel Corporation
    Inventors: Sri Chaitra J. Chavali, Amanda E. Schuckman, Kyu Oh Lee
  • Patent number: 9770092
    Abstract: A brush for back surface treatment (BST) is provided. The brush includes a base portion and a brushing portion. The brushing portion is connected to the base portion. The brushing portion has a plurality of gutters disposed on a surface away from the base portion, in which at least one of the gutters has at least one open end located at least partially on a perimeter of the surface.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: September 26, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Shu Tseng, Yao-Yuan Shang
  • Patent number: 9616551
    Abstract: The invention relates to obtaining an abrasive product comprising a surface with multiple abrasive zones supported by a backing layer. The abrasive zone are surrounded by interconnected channel portions comprising first channel portions with a first transverse dimension td1 and second channel portions with a second transverse dimension td2 larger than the first transverse dimension td1.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: April 11, 2017
    Assignee: KWH MIRKA LTD
    Inventors: Beatriz Meana-Esteban, Göran Höglund, Hans Hede, Markus Kass, Mats Sundell
  • Patent number: 9613833
    Abstract: Disclosed are pre-wetting apparatus designs and methods for cleaning solid contaminants from substrates prior to through resist deposition of metal. In some embodiments, a pre-wetting apparatus includes a process chamber having a substrate holder, and at least one nozzle located directly above the wafer substrate and configured to deliver pre-wetting liquid (e.g., degassed deionized water) onto the substrate at a grazing angle of between about 5 and 45 degrees. In some embodiments the nozzle is a fan nozzle configured to deliver the liquid to the center of the substrate, such that the liquid first impacts the substrate in the vicinity of the center and then flows over the center of the substrate. In some embodiments the substrate is rotated unidirectionally or bidirectionally during pre-wetting with multiple accelerations and decelerations, which facilitate removal of contaminants.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: April 4, 2017
    Assignee: Novellus Systems, Inc.
    Inventors: Lee Peng Chua, Bryan L. Buckalew, Thomas Anand Ponnuswamy, Brian Blackman, Chad Michael Hosack, Steven T. Mayer
  • Patent number: 9536761
    Abstract: A substrate liquid processing apparatus includes a cup 50 configured to receive a processing liquid supplied onto a substrate. The cup includes a ring-shaped first exhaust space 530 in contact with a top opening 50A, and a ring-shaped second exhaust space 540 which is in contact with an exhaust port 52 and is disposed adjacent to the first exhaust space, and the first exhaust space and the second exhaust space communicate with each other intermittently or continuously along an entire circumference thereof. Further, the cup has an inner wall that confines an inner periphery of the second exhaust space, and the inner wall includes a first wall portion 581 serving as an upper part of the inner wall, and a second wall portion which serves as a lower part of the inner wall and is located at an inner position than the first wall portion in a radial direction.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: January 3, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshifumi Amano, Yuki Ito, Eiichiro Okamoto
  • Patent number: 9518187
    Abstract: The present invention relates to a process for producing high-gloss surfaces on at least one portion of a substrate area, where the steps comprise (a) applying a layer made of a melt to at least one portion of the substrate area; (b) polishing of the applied layer of melt; (c) applying at least one lacquer layer to the polished layer of melt by means of a curtain-coating process; and (d) hardening the layer structure applied. The invention further relates to articles obtainable by this type of process.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: December 13, 2016
    Assignee: KLEBCHEMIE M. G. BECKER GMBH & CO. KG
    Inventors: Klaus Becker-Weimann, Jens Fandrey
  • Patent number: 9381573
    Abstract: An electronic device comprising a first magnetic powder; a second magnetic powder, wherein the mean particle diameter of the first magnetic powder is larger than the mean particle diameter of the second magnetic powder, wherein the ratio of the mean particle diameter of the first magnetic powder to the mean particle diameter of the second magnetic powder is greater than 2, and the first magnetic powder mixes with the second magnetic powder; and a conducting wire buried in the mixture of the first magnetic powder and the second magnetic powder; wherein the mixture of the first magnetic powder and the second magnetic powder and the conducting wire buried therein are combined to form an integral magnetic body at a temperature lower than the melting point of conducting wire.
    Type: Grant
    Filed: June 3, 2014
    Date of Patent: July 5, 2016
    Assignee: CYNTEC Co., Ltd.
    Inventors: Wen-Hsiung Liao, Roger Hsieh, Hideo Ikuta, Yueh-Lang Chen
  • Patent number: 9352443
    Abstract: A platen assembly includes a platen body, a polishing pad, and a fountain slurry supplier. The platen body has an upper surface. The polishing pad is disposed on the upper surface of the platen body. The fountain slurry supplier is at least partially disposed on the upper surface of the platen body for supplying slurry up onto the polishing pad.
    Type: Grant
    Filed: November 13, 2013
    Date of Patent: May 31, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shich-Chang Suen, Chin-Hsiang Chan, Liang-Guang Chen, Yung-Cheng Lu
  • Patent number: 9259820
    Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: February 16, 2016
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Bainian Qian, Marty W. DeGroot, James Murnane, Angus Repper, Michelle Jensen, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
  • Patent number: 9082715
    Abstract: A substrate polishing apparatus includes a retainer for holding a substrate and substrate rotating device that spins the retainer around a first rotational axis perpendicular to a to-be-polished surface of the substrate. A platen includes an abrasive pad disposed opposite of the to-be-polished surface of the substrate. A platen rotating device spins the platen around a second rotational axis perpendicular to the abrasive pad. A liquid storage chamber includes a wall portion surrounding the outer periphery of the substrate. One end of the wall portion is positionable in a liquid-tight manner with the abrasive pad to define a liquid storage space for retaining a polishing liquid around the outer periphery of the substrate.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: July 14, 2015
    Assignee: TOHO ENGINEERING CO., LTD.
    Inventors: Tatsutoshi Suzuki, Eisuke Suzuki, Daisuke Suzuki
  • Publication number: 20150144593
    Abstract: An apparatus and method for polishing and strengthening a substrate are disclosed. In one aspect, the apparatus includes a table on which a substrate is placed, a powder supply portion for polishing a surface of the substrate, a substance supply portion, and an injector. The powder supply portion is placed over the table. The substance supply portion is configured to supply a substance onto the polished surface of the substrate. The injector is configured to inject the powder from the powder supply portion onto the surface of the substrate and the substance from the substance supply portion onto the polished surface of the substrate.
    Type: Application
    Filed: June 11, 2014
    Publication date: May 28, 2015
    Inventors: Joo Woan Cho, Seungho Kim
  • Publication number: 20150093905
    Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.
    Type: Application
    Filed: September 16, 2014
    Publication date: April 2, 2015
    Inventors: Tomonori FUJIWARA, Nobuyuki SHIBAYAMA, Yukifumi YOSHIDA, Tetsuya SHIBATA, Akiyoshi NAKANO
  • Patent number: 8991042
    Abstract: A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 31, 2015
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Manabu Sakamoto, Tetsuya Shirasu, Naoki Idani
  • Publication number: 20150087144
    Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate and forming a structure over the semiconductor substrate. The structure includes a sacrificial dielectric on the semiconductor substrate and a dummy gate over the sacrificial dielectric. The method further includes removing the dummy gate and the sacrificial dielectric from the structure thereby forming a trench. The method further includes filling a metal layer into the trench and covering over a top surface of an inter layer dielectric (ILD). The method also includes performing a chemical mechanical polishing (CMP) to expose the top surface of the ILD and heating the top surface of the ILD. Moreover, the method includes forming an etch stop layer on the top surface of the ILD.
    Type: Application
    Filed: September 26, 2013
    Publication date: March 26, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: CHI-JEN LIU, CHIH-CHUNG CHANG, LI-CHIEH WU, SHICH-CHANG SUEN, LIANG-GUANG CHEN
  • Publication number: 20150068680
    Abstract: A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.
    Type: Application
    Filed: November 12, 2014
    Publication date: March 12, 2015
    Inventors: Yasuhisa SANO, Kazuto YAMAUCHI, Junji MURATA, Takeshi OKAMOTO, Shun SADAKUNI, Keita YAGI
  • Publication number: 20140370696
    Abstract: Embodiments of cleaning a surface of a polysilicon layer during a chemical mechanical polishing (CMP) process are provided. The method includes providing a substrate, and forming a gate structure on the substrate, and the gate structure includes a polysilicon layer. The method further includes forming an inter-layer dielectric layer (ILD) over the gate structure. The method also includes performing a CMP process to planarize the inter-layer dielectric layer (ILD) and to expose the polysilicon layer, and the CMP process includes: providing an oxidation solution to a surface of the substrate to perform an oxidation operation to form an oxide layer on the polysilicon layer; and providing a cleaning solution to the surface of the substrate to perform a cleaning operation.
    Type: Application
    Filed: June 13, 2013
    Publication date: December 18, 2014
    Inventors: Che-Hao TU, Chih-Yu CHANG, William Weilun HONG, Ying-Tsung CHEN
  • Publication number: 20140308814
    Abstract: In one aspect, a substrate chemical mechanical polishing (CMP) method for copper-layered substrates is disclosed. The CMP method includes providing a substrate having a surface of copper, and pre-treating the surface containing copper with a first composition containing a carrier liquid, a corrosion inhibitor, and an oxidizer in a pre-treatment phase, and thereafter, polishing the surface with a slurry composition in a main polishing phase. CMP systems and compositions for CMP are provided, as are numerous other aspects.
    Type: Application
    Filed: April 15, 2013
    Publication date: October 16, 2014
    Applicant: Applied Materials, Inc
    Inventors: David Maxwell Gage, You Wang, Zhihong Wang, Wen-chiang Tu
  • Publication number: 20140302676
    Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.
    Type: Application
    Filed: June 19, 2014
    Publication date: October 9, 2014
    Inventors: Mitsuru MIYAZAKI, Seiji KATSUOKA, Naoki MATSUDA, Junji KUNISAWA, Kenichi KOBAYASHI, Hiroshi SOTOZAKI, Hiroyuki SHINOZAKI, Osamu NABEYA, Shinya MORISAWA, Takahiro OGAWA, Natsuki MAKINO
  • Publication number: 20140299271
    Abstract: A system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values.
    Type: Application
    Filed: June 19, 2014
    Publication date: October 9, 2014
    Applicant: CLARKSON UNIVERSITY
    Inventors: P.R. Veera Dandu, Naresh K. Penta, Babu V. Suryadevara, Uma Rames Krishna Lagudu
  • Patent number: 8845852
    Abstract: A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.
    Type: Grant
    Filed: November 27, 2003
    Date of Patent: September 30, 2014
    Assignee: Toyo Tire & Rubber Co., Ltd.
    Inventors: Masahiko Nakamori, Tetsuo Shimomura, Takatoshi Yamada, Kazuyuki Ogawa, Atsushi Kazuno, Masahiro Watanabe
  • Publication number: 20140273458
    Abstract: Chemical mechanical polishing (CMP) compositions for polishing tungsten or tungsten-containing substrates comprise an abrasive, at least one solid catalyst, a chemical additive selected from the groups consisting of piperazine derivatives, salts of cyanate, and combinations thereof; and a liquid carrier. Systems and processes use the aqueous formulations for polishing tungsten or tungsten-containing substrates.
    Type: Application
    Filed: December 27, 2013
    Publication date: September 18, 2014
    Applicant: Air Products And Chemicals, Inc.
    Inventors: Xiaobo Shi, Hongjun Zhou, Blake J. Lew, James Allen Schlueter, Jo-Ann Theresa Schwartz
  • Publication number: 20140263174
    Abstract: A method for scoring and, optionally, for applying a pigment solution to a substrate is provided herein. The method includes the steps of: providing a substrate; applying a curable solution to the substrate with a digital ink jet printer; curing the applied curable solution to form a cured region; and applying a fluid for eroding the substrate to at least a portion of the substrate including the cured region. The fluid for eroding the substrate effectively removes portions of the substrate, which are not covered by the cured region, to form an eroded region of the substrate. In certain embodiments, a plurality of pigment solutions are then applied to at least a portion of the eroded region of the substrate with the digital ink-jet printer to form embellishments, decorative features, or designs in the eroded regions of the substrate.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Inventor: Thomas J. McKnight
  • Publication number: 20140231011
    Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.
    Type: Application
    Filed: April 10, 2014
    Publication date: August 21, 2014
    Applicant: Ebara Corporation
    Inventors: Kazuto YAMAUCHI, Yasuhisa SANO, Hideyuki HARA, Junji MURATA, Keita YAGI
  • Publication number: 20140227945
    Abstract: A method and system for planarizing or polishing a semiconductor wafer. The system includes a carrier adaptable to hold a semiconductor wafer, a polishing pad, and a platen having a substantially planar surface in contact with the polishing pad, the planar surface having a distribution of holes. The distributed holes are operatively connected to a vacuum system providing a vacuum pressure to hold the polishing pad against the platen during operation of the system. Relative movement between the carrier and polishing pad acts to planarize a surface of the wafer.
    Type: Application
    Filed: February 8, 2013
    Publication date: August 14, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chang-Sheng LIN, Hsin-Hsien LU
  • Publication number: 20140213056
    Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.
    Type: Application
    Filed: January 29, 2013
    Publication date: July 31, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co., LTD.
    Inventors: Hsin-Hsien LU, Ting-Kui CHANG, Jung-Tsan TSAI
  • Publication number: 20140199840
    Abstract: In one aspect, a substrate polishing apparatus is disclosed. The apparatus has a polishing platform having two or more zones, each zone adapted to contain a different slurry component. In another aspect, a substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.
    Type: Application
    Filed: December 30, 2013
    Publication date: July 17, 2014
    Inventors: Rajeev Bajaj, Thomas H. Osterheld, Hung Chen, Terrance Y. Lee
  • Publication number: 20140199842
    Abstract: In one aspect, a substrate chemical mechanical polishing (CMP) method for substrates is disclosed. The CMP method includes providing a substrate having a surface of silicon and copper such as through silicon via regions containing copper, and polishing the surface with a slurry containing very small silicon nanoparticles (e.g., having an average diameter less than 8 nanometers). CMP systems and slurries for CMP are provided, as are numerous other aspects.
    Type: Application
    Filed: December 30, 2013
    Publication date: July 17, 2014
    Inventors: Vishwas V. Hardikar, Zhihong Wang, David Maxwell Gage, Thomas E. Gartner, III
  • Publication number: 20140190633
    Abstract: A substrate cleaning apparatus capable of efficiently cleaning a substrate, such as a wafer, is provided. The substrate cleaning apparatus includes: a substrate holder for holding and rotating a substrate; a chemical liquid nozzle for supplying a chemical liquid onto the substrate; a two-fluid nozzle for supplying a two-fluid jet onto the substrate; and a moving mechanism for moving the chemical liquid nozzle and the two-fluid nozzle together from a center to a periphery of the substrate. The chemical liquid nozzle and the two-fluid nozzle are adjacent to each other with a predetermined distance therebetween, and the chemical liquid nozzle is located forward of the two-fluid nozzle with respect to a movement direction of the chemical liquid nozzle and the two-fluid nozzle.
    Type: Application
    Filed: October 1, 2013
    Publication date: July 10, 2014
    Applicant: EBARA CORPORATION
    Inventors: Koji Maeda, Hiroshi Shimomoto, Hisajiro Nakano, Masayoshi Imai, Yoichi Shiokawa
  • Publication number: 20140187042
    Abstract: According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.
    Type: Application
    Filed: March 6, 2014
    Publication date: July 3, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yukiteru Matsui, Masako Kodera, Hiroshi Tomita, Gaku Minamihaba, Akifumi Gawase
  • Patent number: 8758090
    Abstract: A polishing method includes: mounting a wafer on a fixed abrasive polishing pad located on a polishing platen; delivering a polishing slurry to the fixed abrasive polishing pad to polish the wafer; and adsorbing abrasive particles generated during the polishing process with an electrode. The electrode has a polarity opposite to a polarity of charges of the abrasive particles. A polishing device includes a polishing platen, a fixed abrasive polishing pad, a slurry pipeline and a polarity changer having an electrode. Therefore, the abrasive particles generated during the polishing process are removed, which prevents the wafer from being scratched, thereby increasing wafer yield and improving efficiency.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: June 24, 2014
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Qun Shao, Li Jiang, Mingqi Li, Qingling Wang
  • Publication number: 20140159243
    Abstract: The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
    Type: Application
    Filed: February 18, 2014
    Publication date: June 12, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Soon-Kang Huang, Han-Hsin Kuo, Chi-Ming Yang, Shwang-Ming Jeng, Chin-Hsiang Lin
  • Patent number: 8747189
    Abstract: A method of controlling polishing includes polishing a substrate of a non-metallic layer undergoing polishing and a metal layer underlying the non-metallic layer; storing a metal reference spectrum, the metal reference spectrum being a spectrum of light reflected from a same metal material as the metal layer; measuring a sequence of raw spectra of light reflected from the substrate during polishing with an in-situ optical monitoring system; normalizing each raw spectrum in the sequence of spectra to generate a sequence of normalized spectra, of which normalizing includes a division operation where the measured spectrum is in the numerator and the metal reference spectrum is in the denominator; and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least one normalized predetermined spectrum from the sequence of normalized spectra.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: June 10, 2014
    Assignee: Applied Materials, Inc.
    Inventor: Jeffrey Drue David
  • Publication number: 20140150974
    Abstract: A flexible membrane for a carrier head of a chemical mechanical polisher includes a main portion, an annular outer portion, and three annular flaps. The main portion has a substrate mounting surface with a radius R. The annular outer portion extends upwardly from an outer edge of the main portion and has a lower edge connected to the main portion and an upper edge. The three annular flaps include a first annular flap joined to an inner surface of the main portion at a radial position between 75% and 95% of R, a second inwardly-extending annular flap joined to the annular outer portion at a position between the lower edge and the upper edge, and a third inwardly-extending annular flap joined to the upper edge of the annular outer portion.
    Type: Application
    Filed: November 12, 2013
    Publication date: June 5, 2014
    Applicant: Applied Materials, Inc.
    Inventors: Jeonghoon Oh, Jamie Leighton