Abstract: A substrate processing apparatus includes a radio-frequency power supply part configured to supply radio-frequency power for plasma generation to a processing container, and a monitoring part configured to detect an abnormality in the supply of the radio-frequency power to the processing container, wherein the monitoring part is configured to detect the abnormality in the supply of the radio-frequency power to the processing container based on a signal data obtained by sampling a signal propagating between the radio-frequency power supply part and the processing container at a sampling frequency higher than a frequency of the radio-frequency power.

Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition comprising a solvent; an abrasive agent; and a dendritic poly(amidoamine) containing a terminal functional group that has a pKa of about 6 or less.

Abstract: A substrate processing apparatus configured to process a substrate includes a functional component constituting a part of the substrate processing apparatus; a nozzle, provided on a surface of the functional component, allowing a gas to pass therethrough; a nozzle flow path which is connected to the nozzle of the functional component and through which the gas flows; a flow rate sensor configured to measure a flow rate of the gas flowing through the nozzle flow path; and a controller configured to make a determination upon a state of a distance between an interfering object and the functional component based on a measurement result obtained by the flow rate sensor.

Abstract: A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.

Abstract: A cleaning method capable of removing abrasive grains adhering to a light passage provided in a polishing table is disclosed. The cleaning method includes: while supplying slurry containing abrasive grains onto a polishing pad supported by a polishing table, placing a substrate in sliding contact with the polishing pad to polish the substrate; during polishing of the substrate, directing light to the substrate through a light passage provided in the polishing table, and causing reflected light from the substrate to pass through the light passage; removing the polished substrate from the polishing pad; and supplying a chemical liquid into the light passage when the substrate is not present on the polishing pad to remove the abrasive grains adhering to the light passage by the chemical liquid.

Abstract: Provided are a membrane and carrier head using the membrane for polishing apparatus. The membrane comprises a first fixing flap extending inwards from the upper part of a side portion, a second fixing flap extending upwards from the upper part of the side portion, wherein the second fixing flap has a first inclined part, a second inclined part and a third extending part of extending upwards whereby a compensation force generated by the inclined parts realize the constant pressing force to the edge of a substrate during a polishing process.

Abstract: A substrate processing apparatus includes a substrate rotator that holds and rotates a substrate including a film of a metal formed on a surface thereof, a first supply that supplies a first processing liquid containing a chelating agent and a solvent toward the substrate, a second supply that supplies a second processing liquid containing water toward the substrate, and a controller that controls the substrate rotator, the first supply, and the second supply. While rotating the substrate by the substrate rotator, the controller supplies the first processing liquid toward the substrate by the first supply to generate a complex containing the metal and the chelating agent, and after the generation of the complex, supplies the second processing liquid toward the substrate by the second supply to dissolve the complex in the second processing liquid.

Abstract: The agitation of the plating solution may result in spattering of the plating solution. It have been found that the spattered plating solution can be attached even to portions that are not originally brought into contact with the plating solution in the plating apparatus. There is provided an electroplating apparatus for plating a substrate using a substrate holder, the electroplating apparatus comprising at least one bath for storing the substrate, the substrate holder being provided with a hanger shoulder, and a holder contact, and wherein the electroplating apparatus being provided with a cleaning/drying part provided on at least one side of the bath, the cleaning/drying part being provided for cleaning and/or drying at least one of the hanger shoulder, the holder contact and a contact provided to the bath.

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract: Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; a upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and an heating element disposed inside the annular member.

Abstract: The invention provides a polishing pad suitable for polishing integrated circuit wafers. It includes an upper polishing layer that having a polishing surface and at least one groove in the upper polishing layer. At least one transparent window is located within the upper layer. The at least one transparent window has a thickness greater than a desired wear depth of the at least one groove. The at least one transparent window includes a non-fluorescent transparent polymer; and a fluorescent transparent polymer. The transparent window allows measuring groove depth by activating the fluorescent transparent polymer with an activation source at a wavelength sufficient to excite the fluorescent transparent polymer and allow endpoint detection by sending light through the fluorescent transparent polymer and the non-fluorescent transparent polymer.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

Abstract: The invention provides a polishing pad suitable for polishing integrated circuit wafers. A polyurethane polishing layer has a top surface and at least one groove in the polyurethane polishing layer. At least one copolymer wear detector located within the polyurethane polishing layer detects wear of the polishing layer adjacent the at least one groove. The at least one wear detector includes two regions, a first region being a fluorescent acrylate/urethane copolymer linked with a UV curable linking group and a second non-fluorescent region, The wear detector allows detecting wear of the polishing layer.

Abstract: An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

Abstract: A substrate processing system includes a substrate processing set and a substrate holding unit. The substrate processing set includes a substrate supporting part for supporting a vertical substrate. The substrate holding unit includes two cantilevers and two substrate holding parts. Each of the substrate holding parts is respectively located on each of the cantilevers. The two substrate holding parts are used for holding the substrate vertically. When the substrate holding unit moves next to the substrate processing set and the two substrate holding parts touch the substrate, the two substrate holding parts hold the substrate.

Abstract: A polishing slurry according to the present invention contains: abrasive grains made of a metal oxide; a permanganate; and an inorganic compound other than the permanganate. The inorganic compound is such that a solution that is obtained by adding the inorganic compound to a 1.0 mass % aqueous solution of the permanganate so that the inorganic compound accounts for 1.0 mass % of the resultant aqueous solution has an oxidation-reduction potential higher than that of the 1.0 mass % aqueous solution of the permanganate. It is preferable that the inorganic compound be contained in an amount of 0.7 parts by mass or more and 150 parts by mass or less relative to 100 parts by mass of the permanganate. It is also preferable that the abrasive grains made of a metal oxide be manganese oxide particles.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.

Abstract: The invention provides a polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix, a thickness and a polishing track representing a working region of the polishing layer for polishing or planarizing. Radial drainage grooves extend through the polishing track facilitate polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.

Abstract: In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: The present invention provides a gas-phase growth apparatus in which an upper part of a circular susceptor 13 on the upper surface of which a substrate 17 is arranged is provided into a circular opening 12a formed at a bottom wall of the flow channel 12, while rotating the susceptor, the substrate is heated by a heater 14 provided under the susceptor through the susceptor, a reaction gas is supplied into the flow channel, and a thin film is produced on the substrate, wherein a rotation driving device 18 for rotating the susceptor is arranged in a state of surrounding the heater, and includes a cylindrical rotation member 19 for supporting the circumferential edge of the susceptor by the top end.

Abstract: Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) of substrates. In one embodiment, a carrier head for a CMP apparatus is disclosed herein. The carrier head includes a body, a retaining ring, and a sensor assembly. The retaining ring is coupled to the body. The sensor assembly is positioned at least partially in the body. The sensor assembly includes a transmitter, an antenna, and a vibrational sensor. The transmitter has a first end and a second end. The antenna is coupled to the first end of the transmitter. The vibrational sensor is coupled to the second end. The vibrational sensor is configured to detect vibration during chemical mechanical processes with respect to radial, azimuthal, and angular axes of the carrier head.

Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) system, and an associated method to perform a CMP process. In some embodiments, the CMP system has a rotatable wafer carrier configured to hold a wafer face down to be processed. The CMP system also has a polishing layer attached to a polishing platen and having a front surface configured to interact with the wafer to be processed, and a CMP dispenser configured to dispense a slurry between an interface of the polishing layer and the wafer. The slurry contains charged abrasive particles therein. The CMP system also has a film electrode attached to a back surface of the polishing layer opposite to the front surface. The film electrode is configured to affect movements of the charged abrasive particles through applying an electrical field during the operation of the CMP system.

Abstract: Provided is a load port capable of loading and unloading a substrate by a transfer robot in a state where a purge gas atmosphere is maintained inside a substrate storage space. After the lid of the substrate storage container is opened, an opening portion of the substrate storage container is closed by a frame sealing a peripheral edge of the opening portion of the substrate storage container and a shutter portion where a plurality of shielding plates are disposed in a vertical direction at a third position which is further moved forward from a release position. The shutter portion can locally move all or a portion of the shielding plates to form a narrow opening portion (third opening portion), and transferring of the substrate in the state where an atmosphere of the substrate storage space is replaced is performed through the narrow opening portion (third opening portion).

Abstract: In one embodiment, a polishing head includes an elastic film configured to form pressure rooms to which a pressure fluid is fed, and configured to press a substrate onto a polishing surface with a fluid pressure of the pressure fluid. The head further includes a first magnetic generator provided above a partition wall that separates the pressure rooms. The head further includes a second magnetic generator configured to form at least a portion of the partition wall or provided below the partition wall.

Abstract: A CMP pad conditioner for conditioning a polishing pad. Various embodiments of the disclosure include a plurality of elongated protrusions which work a conditioned surface of a polishing pad at a variety of attack angles as the CMP pad conditioner engages the polishing pad. Because of the elongated geometry of the protrusions, the variety of attack angles will tend to flex the conditioned face of the polishing pad in a multifaceted manner. Such multifaceted manipulation of the conditioned face enhances the cut rate of the conditioner assembly and the removal of debris in the pores of the polishing pad that are residual from the CMP process, to better open the pores of the polishing pad and to better maintain the removal rate in the CMP process.

Abstract: Provided is a substrate processing apparatus which may update an accumulated film thickness of each dummy substrate when a dummy substrate carrier is reloaded. The substrate processing apparatus includes: a process chamber where a plurality of substrates including a dummy substrate are processed; a substrate receiving unit whereon a dummy substrate carrier accommodating at least the dummy substrate is placed; a memory unit configured to store a film thickness of the dummy substrate in the dummy substrate carrier when the dummy substrate carrier is unloaded from the substrate receiving unit; and a management unit configured to update the film thickness of the dummy substrate in the dummy substrate carrier based on the film thickness stored in the memory unit when the dummy substrate carrier is reloaded onto the substrate receiving unit.

Abstract: Disclosed is an ultrafine abrasive biopolymer soft polishing film having a base material, the base material including a high polymer base material formed by crosslinking, solidifying and drying a uniform mixture that include from 0.1-10 wt % of an ultrafine abrasive that is chemically coated with a coupling agent to provide a surface-modified ultrafine abrasive; from 5-15 wt % of a chemical additive for controlling dryness; and from 1-10 wt % of a biopolymer sol, wherein the coupling agent improves dispersion and holding of the surface-modified ultrafine abrasive in the high polymer base material, and a method of making the same.

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.

Abstract: An object of the invention is to provide a coating apparatus for a resin container capable of improving mass-production efficiency of coating-treated resin containers. A plurality of container holding members, which are installed on a rotating table and can hold a resin container, are sequentially moved to a container supply position in which the resin container is supplied, a coating treatment position in which coating treatment of forming a thin film on an inner surface of the resin container is performed in a state of being combined with a chamber lid part, and a container detachment position in which the resin container to which the thin film is formed by the coating treatment can be detached according to the rotation of the rotating table, so that the treatments in the respective positions are performed in parallel.

Abstract: A semiconductor wafer has a base material. The semiconductor wafer may have an edge support ring. A grinding phase of a surface of the semiconductor wafer removes a portion of the base material. The grinder is removed from or lifted off the surface of the semiconductor wafer during a separation phase. The surface of the semiconductor wafer and under the grinder is rinsed during the grinding phase and separation phase to remove particles. A rinsing solution is dispensed from a rinsing solution source to rinse the surface of the semiconductor wafer. The rinsing solution source can move in position while dispensing the rinsing solution to rinse the surface of the semiconductor wafer. The grinding phase and separation phase are repeated during the entire grinding operation, when grinding conductive TSVs, or during the final grinding stages, until the final thickness of the semiconductor wafer is achieved.

Abstract: The invention relates to obtaining an abrasive product comprising a surface with multiple abrasive zones supported by a backing layer. The abrasive zone are surrounded by interconnected channel portions comprising first channel portions with a first transverse dimension td1 and second channel portions with a second transverse dimension td2 larger than the first transverse dimension td1.

Abstract: The plasma processing apparatus includes: a processing chamber disposed inside a vacuum vessel; a first high-frequency power supply outputting a first high-frequency power for supplying an electric field to generate a plasma for use in processing a sample to be processed inside the processing chamber; a sample stage disposed inside the processing chamber with the sample placed on an upper surface thereof; a second high-frequency power supply intermittently outputting a second high-frequency power for generating a bias potential to an electrode disposed inside the sample stage and capable of variably adjusting the output time; and a function to adjust operation of the plasma processing apparatus using a result of detection of a temporal change in waveform of current or voltage in a transient state of the second high-frequency power in synchronism with start of the intermittent output of the second high-frequency power.

Abstract: Techniques and mechanisms for providing effective connectivity with surface level microbumps on an integrated circuit package substrate. In an embodiment, different metals are variously electroplated to form a microbump which extends through a surface-level dielectric of a substrate to a seed layer including copper. The microbump includes a combination of tin and zinc that mitigates precipitation of residual copper by promoting the formation of miconstituents in the microbump. In another embodiment, the microbump has a mass fraction of zinc, or a mass fraction of tin, that is different in various regions along a height of the microbump.

Abstract: A brush for back surface treatment (BST) is provided. The brush includes a base portion and a brushing portion. The brushing portion is connected to the base portion. The brushing portion has a plurality of gutters disposed on a surface away from the base portion, in which at least one of the gutters has at least one open end located at least partially on a perimeter of the surface.

Abstract: The invention relates to obtaining an abrasive product comprising a surface with multiple abrasive zones supported by a backing layer. The abrasive zone are surrounded by interconnected channel portions comprising first channel portions with a first transverse dimension td1 and second channel portions with a second transverse dimension td2 larger than the first transverse dimension td1.

Abstract: Disclosed are pre-wetting apparatus designs and methods for cleaning solid contaminants from substrates prior to through resist deposition of metal. In some embodiments, a pre-wetting apparatus includes a process chamber having a substrate holder, and at least one nozzle located directly above the wafer substrate and configured to deliver pre-wetting liquid (e.g., degassed deionized water) onto the substrate at a grazing angle of between about 5 and 45 degrees. In some embodiments the nozzle is a fan nozzle configured to deliver the liquid to the center of the substrate, such that the liquid first impacts the substrate in the vicinity of the center and then flows over the center of the substrate. In some embodiments the substrate is rotated unidirectionally or bidirectionally during pre-wetting with multiple accelerations and decelerations, which facilitate removal of contaminants.

Abstract: A substrate liquid processing apparatus includes a cup 50 configured to receive a processing liquid supplied onto a substrate. The cup includes a ring-shaped first exhaust space 530 in contact with a top opening 50A, and a ring-shaped second exhaust space 540 which is in contact with an exhaust port 52 and is disposed adjacent to the first exhaust space, and the first exhaust space and the second exhaust space communicate with each other intermittently or continuously along an entire circumference thereof. Further, the cup has an inner wall that confines an inner periphery of the second exhaust space, and the inner wall includes a first wall portion 581 serving as an upper part of the inner wall, and a second wall portion which serves as a lower part of the inner wall and is located at an inner position than the first wall portion in a radial direction.

Abstract: The present invention relates to a process for producing high-gloss surfaces on at least one portion of a substrate area, where the steps comprise (a) applying a layer made of a melt to at least one portion of the substrate area; (b) polishing of the applied layer of melt; (c) applying at least one lacquer layer to the polished layer of melt by means of a curtain-coating process; and (d) hardening the layer structure applied. The invention further relates to articles obtainable by this type of process.

Abstract: An electronic device comprising a first magnetic powder; a second magnetic powder, wherein the mean particle diameter of the first magnetic powder is larger than the mean particle diameter of the second magnetic powder, wherein the ratio of the mean particle diameter of the first magnetic powder to the mean particle diameter of the second magnetic powder is greater than 2, and the first magnetic powder mixes with the second magnetic powder; and a conducting wire buried in the mixture of the first magnetic powder and the second magnetic powder; wherein the mixture of the first magnetic powder and the second magnetic powder and the conducting wire buried therein are combined to form an integral magnetic body at a temperature lower than the melting point of conducting wire.

Abstract: A platen assembly includes a platen body, a polishing pad, and a fountain slurry supplier. The platen body has an upper surface. The polishing pad is disposed on the upper surface of the platen body. The fountain slurry supplier is at least partially disposed on the upper surface of the platen body for supplying slurry up onto the polishing pad.

Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.

Abstract: A substrate polishing apparatus includes a retainer for holding a substrate and substrate rotating device that spins the retainer around a first rotational axis perpendicular to a to-be-polished surface of the substrate. A platen includes an abrasive pad disposed opposite of the to-be-polished surface of the substrate. A platen rotating device spins the platen around a second rotational axis perpendicular to the abrasive pad. A liquid storage chamber includes a wall portion surrounding the outer periphery of the substrate. One end of the wall portion is positionable in a liquid-tight manner with the abrasive pad to define a liquid storage space for retaining a polishing liquid around the outer periphery of the substrate.

Abstract: An apparatus and method for polishing and strengthening a substrate are disclosed. In one aspect, the apparatus includes a table on which a substrate is placed, a powder supply portion for polishing a surface of the substrate, a substance supply portion, and an injector. The powder supply portion is placed over the table. The substance supply portion is configured to supply a substance onto the polished surface of the substrate. The injector is configured to inject the powder from the powder supply portion onto the surface of the substrate and the substance from the substance supply portion onto the polished surface of the substrate.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate and forming a structure over the semiconductor substrate. The structure includes a sacrificial dielectric on the semiconductor substrate and a dummy gate over the sacrificial dielectric. The method further includes removing the dummy gate and the sacrificial dielectric from the structure thereby forming a trench. The method further includes filling a metal layer into the trench and covering over a top surface of an inter layer dielectric (ILD). The method also includes performing a chemical mechanical polishing (CMP) to expose the top surface of the ILD and heating the top surface of the ILD. Moreover, the method includes forming an etch stop layer on the top surface of the ILD.

Abstract: A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.