Abstract: The present invention relates to a ceramic heater. The ceramic heater of the present invention comprises: a heater plate in which a heating element is disposed and which is made of a ceramic material; a shaft which has a tubular shape with a through-hole and is coupled to the bottom surface of the heater plate and in which a rod for supplying power to the heating element through the through-hole is received; and a continuous or discontinuous air pocket which is provided in a joint with which the heater plate and the shaft come into contact and by which the heater plate and the shaft are coupled to each other, wherein the air pocket is formed along the joining surface of the joint.

Abstract: A spraying material comprising a rare earth (R), aluminum and oxygen, the spraying material being a powder and comprising a crystalline phase of a rare earth (R) aluminum monoclinic (R4Al2O9) and a crystalline phase of a rare earth oxide (R2O3), with respect to diffraction peaks detected within a diffraction angle 2? range from 10° to 70° by a X-ray diffraction method using the characteristic X-ray of Cu-K?, the spraying material having diffraction peaks attributed to the rare earth oxide (R2O3) and diffraction peaks attributed to the rare earth (R) aluminum monoclinic (R4Al2O9), and an intensity ratio I(R)/I(RAL) of an integral intensity I(R) of the maximum diffraction peak attributed to the rare earth oxide (R2O3) to an integral intensity I(RAL) of the maximum diffraction peak attributed to the rare earth aluminum monoclinic (R4Al2O9) being at least 1.

Abstract: Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).

Abstract: A gas introduction structure for supplying a processing gas into a vertically-elongated processing container, includes a processing gas supply pipe extending along a longitudinal direction of the processing container in the processing container and having a plurality of gas discharge holes formed along the longitudinal direction, the processing gas supply pipe configured so that the processing gas is introduced from one end toward the other end thereof, wherein a dilution gas is supplied to a portion of the processing gas supply pipe that is closer to the other end than the one end of the processing gas supply pipe.

Abstract: Disclosed are a liner assembly for vacuum treatment apparatuses and a vacuum treatment apparatus, wherein the liner assembly for vacuum treatment apparatuses comprises: an annular liner including a sidewall protection ring and a support ring which are interconnected, the outer diameter of the support ring being greater than that of the sidewall protection ring, the annular liner enclosing a treating space; and a gas channel provided in the support ring, the gas channel communicating with the treating space. The liner assembly for vacuum treatment apparatuses offer an improved performance.

Abstract: A component for use in a plasma processing apparatus, which is to be exposed to a plasma, includes a base material, an alumite layer and a thermally sprayed film. The base material has a plurality of through holes and a rough surface at which one end of each of the through holes is opended. The alumite layer is formed on a surface of the base material having the rough surface by an anodic oxidation process. The thermally sprayed film is formed on the rough surface with the alumite layer therebetween.

Abstract: A chemical oxide removal (COR) processing system is presented, wherein the COR processing system includes a first treatment chamber and a second treatment chamber. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber having a protective barrier. The second treatment chamber comprises a heat treatment chamber that provides a temperature-controlled chamber having a protective barrier.

Abstract: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

Abstract: Disclosed is a plasma processing apparatus, in which parasitic plasma is not generated in a transfer chamber. The plasma processing apparatus has a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers.

Abstract: Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.

Abstract: In film-forming devices and plasma-processing devices, filmy matter adheres to the surfaces of the inner parts and it peels to cause dust and particles in the devices. In the devices, the dust and particles contaminate the objects for film formation thereon or the objects to be processed with plasma. For preventing the objects from being contaminated with them, the inner parts of the devices must be frequently exchanged every time when they have received any minor filmy matter thereon, and this lowers the productivity in the devices. When a modified glass part of which the surface is modified with spherical or bell-like island projections having a width and a height of from a few ?m to a few hundreds ?m is used in a film-forming device and in a plasma-processing device, then its ability to hold the filmy substance having adhered thereto is good and its resistance to plasma is also good.

Abstract: Embodiments of the present invention provide a substrate support assembly having a protective layer that enhances plasma resistance. In one embodiment, a substrate support assembly includes an electrostatic chuck having an upper substrate support surface, and a protective layer disposed on the electrostatic chuck, wherein the protective layer is fabricated by a ceramic material containing a rare earth metal.

Abstract: A dielectric-coated electrode having a conductive base material coated with a dielectric on a surface thereof, the dielectric including a first metal atom and a second metal atom. As for an ionic strength of the first metal atom and an ionic strength of the second metal atom according to a dynamic SIMS measurement, the ionic strength of the second metal atom is larger than the ionic strength of the first metal atom from the most surface of the dielectric toward a predetermined depth of the dielectric, and the ionic strength of the first metal atom is larger than the ionic strength of the second metal atom from the predetermined depth toward the surface of the conductive base material.

Abstract: a substrate processing apparatus that enables abnormal electrical discharges and metal contamination to be prevented from occurring. A processing chamber is configured to house and carry out predetermined plasma processing on a substrate. A lower electrode is disposed on a bottom portion of the processing chamber and has the substrate mounted thereon. An upper electrode is disposed in a ceiling portion of the processing chamber. A side wall component covering a side wall of the processing chamber faces onto a processing space between the upper electrode and the lower electrode. The side wall component has at least one electrode layer to which a DC voltage is applied. An insulating portion made of an insulating material is present at least between the electrode layer and the processing space and covers the electrode layer. The insulating portion is formed by thermally spraying the insulating material.

Abstract: A processing apparatus for use in a corrosive operating environment at a temperature range of 25-1500° C. is provided. The apparatus has an NZP or an NZP-type coating, which comprises a first composition, a second composition, and a metal cation. The first composition and the second composition form a crystalline structure with three-dimensional network of octahedra and tetrahedra linked by one or more shared atoms. The first composition comprises one or more of Zr, V, Ta, Nb, Hf, Ti, Al, Cr, or a metal of the Lanthanide series. The second composition comprises at least one of phosphorus, silicon, boron, vanadium or aluminum. The one or more shared atoms comprise at least one of oxygen, nitrogen, or carbon. The first composition and the second composition are related as shown by the formula (first composition)2 (second composition)x (shared atom)12-x. The metal cation is disposed within an interstitial site defined by the crystalline structure.

Abstract: A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.

Abstract: Disclosed is a plasma processing apparatus, in which parasitic plasma is not generated in a transfer chamber. The plasma processing apparatus has a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers.

Abstract: Susceptors are provided that employ layers of CTE-matching materials to reduce the stresses that otherwise lead to cracking and failure. Exemplary CTE-matching materials include metal alloys of aluminum and silicon that can be tailored to specific CTE values by adjusting the ratio of the elements. An exemplary susceptor comprises a CTE-matching material that accommodates the differences in the CTEs of a ceramic material and a thermal barrier layer disposed on opposite sides of the CTE-matching material. Methods are also provided for forming susceptors. These methods comprise assembling the components and bonding the assembly together, such as by diffusion bonding, to produce a susceptor that is a monolithic body.

Abstract: A substrate processing apparatus removes resist films formed on wafers by holding the wafers in a processing vessel and exposing the wafers to a mixed gaseous fluid of steam and an ozone-containing gas into the processing vessel. The inner surfaces, to be exposed to the mixed gaseous fluid, of the processing vessel and the surfaces, to be exposed to the mixed gaseous fluid, of component members placed in the processing vessel are coated with SiO2 film to protect the same from the corrosive action of the mixed gaseous fluid.

Abstract: A component for a substrate processing chamber has a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.

Abstract: A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the dielectric material. The plasma sprayed coating comprises a textured surface having a roughness with an average skewness that is a negative value. When the enclosure wall is used in a plasma processing chamber, sputtered material generated by a plasma formed in a plasma processing chamber has good adherence to the textured surface.

Abstract: The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber 100A in which a sample 500 formed with a carbon thin film 510 on its surface is to be set, a gas feed means 200A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O2 has been mixed from one end to the interior of the reaction chamber 100A, an exhaust means 300A for discharging carbon dioxide gas CO2 from the downstream side of the inert gas Ar fed from the gas feed means 200A, and a heating means 400A for heating the sample 500 to 550° C. or higher are provided.

Abstract: An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

Abstract: There is provided a treatment container which enables to prolong a period of time taken for reaction products, such as a halide generated through reaction with corrosive halide gas, to exfoliate and fall down as particles, and decreases the frequency of periodic maintenance operation, thereby implementing increase of operating time. The treatment container constituting a chamber or a bell jar has a portion of the inner surface to be exposed to corrosive halide gas plasma and is formed with a sintered body mainly composed of a compound of yttrium and aluminum with oxygen, and the portion has a roughened surface of a mean roughness Ra of 1.5 to 10 &mgr;m.

Abstract: An electrode assembly for a plasma reactor, such as a plasma etch or plasma-enhanced chemical vapor deposition reactor, comprises an electrode plate having a support frame attached to one surface thereof. The electrode plate is composed of a substantially pure material which is compatible with a particular reaction being performed in the reactor, while the support frame is composed of a material having desirable thermal, electrical, and structural characteristics. The support frame is bonded to the electrode plate using a bonding layer, usually a ductile metallic bonding layer, which provides effective thermal and electrical coupling while permitting a degree of thermal expansion mismatch between the support frame and the electrode plate.