Abstract: The present invention provides an electronic or electrical device or component thereof comprising a cross-linked polymeric coating on a surface of the electronic or electrical device or component thereof; wherein the cross-linked polymeric coating is obtainable by exposing the electronic or electrical device or component thereof to a plasma comprising a monomer compound and a crosslinking reagent for a period of time sufficient to allow formation of the cross-linked polymeric coating on a surface thereof, wherein the monomer compound has the following formula: where R1, R2 and R4 are each independently selected from hydrogen, optionally substituted branched or straight chain C1-C6 alkyl or halo alkyl or aryl optionally substituted by halo, and R3 is selected from: where each X is independently selected from hydrogen, a halogen, optionally substituted branched or straight chain C1-C6 alkyl, halo alkyl or aryl optionally substituted by halo; and n1 is an integer from 1 to 27; and wherein the crosslinki

Abstract: A method for reducing the optical loss of the multilayer coating below a predetermined value in a zone by producing coating on a displaceable substrate in a vacuum chamber with the aid of a residual gas using a sputtering device. Reactive depositing a coating on the substrate by adding a reactive component with a predetermined stoichiometric deficit in a zone of the sputtering device. Displacing the substrate with the deposited coating into the vicinity of a plasma source, which is located in the vacuum chamber at a predetermined distance from the sputtering device. The plasma action of the plasma source modifying the structure and/or stoichiometry of the coating, preferably by adding a predetermined quantity of the reactive component to reduce the optical loss of the coating.

Abstract: A method of producing a modification of pigments using atomic layer deposition (ALD) in varying electrical resistivity. More specifically, ALD may be used to encapsulate pigment particles with controlled thicknesses of a conductive layer, such as indium tin oxide (ITO). ALD may allow films to be theoretically grown one atom at a time, providing angstrom-level thickness control.

Abstract: Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap exists therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=a?n+b(cos ?)m+c(tan ?)k+d, 0<=n<=2, 0<=m<=2, c=0 or k=0. Because the gap between the inner magnetic pole and the outer magnetic pole has the different widths in a spiral discrete direction, width sizes of the gap in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness.

Abstract: Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.

Abstract: A magnet unit Mu is disposed inside a target of a cylindrical shape and generates a magnetic field that leaks from a surface of the target such that a line passing through a position in which a vertical component of the magnetic field becomes zero extends along a generating line of the target so as to close like a racetrack shape. The magnet unit is constituted into separate parts of: a first part which respectively forms a corner portion of the racetrack shape at both ends, in the direction of the generating line, of the target; a second part which is respectively disposed on the inside, as seen in the direction of the generating line, of the target, adjacent to the first part; and a third part which is positioned between the second parts.

Abstract: A method for manufacturing a magnetic random access memory element that allows for improved magnetic element pillar formation in a high density magnetic memory element array. The method allows a magnetic memory element pillar to be formed by ion milling with a lower pillar height for reduced shadowing effect. A memory element seed layer and under-layer are first formed on a substrate and layer of electrically insulating material such as silicon oxide is deposited. A chemical mechanical polishing process is performed, leaving the seed layer and under-layer surrounded by a layer of electrically insulating material having an upper surface that is coplanar with an upper surface of the under-layer. A magnetic memory element pillar is formed over the seed layer and under-layer by depositing the magnetic memory element material, forming a mask over the magnetic memory element material and performing an ion milling process to form a magnetic memory element pillar.

Abstract: Certain embodiments described herein are directed to devices, systems and methods that comprise asymmetric induction devices. In some instances, the device can include a plurality of plate electrodes which can be spaced asymmetrically or a plurality of coils which can be spaced asymmetrically.

Abstract: An implantable medical device that is fabricated from materials that present a blood or body fluid or tissue contact surface that has controlled heterogeneities in material constitution. An endoluminal stent-graft and web-stent that is made of a monolithic material formed into differentiated regions defining structural members and web regions extending across interstitial spaces between the structural members. The endoluminal stent-graft is characterized by having controlled heterogeneities at the blood flow surface of the stent.

Abstract: A sputtering cathode includes a magnet having a body of length L1 defining a north magnetic pole at a first end of the body and a south magnetic pole at a second, opposite end of the body. A sputtering target of length L2 surrounds the body of the magnet, but not ends of the magnet.

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

Abstract: Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.

Abstract: A method for coating substrates with multiple coating layers can comprise: establishing a sub-atmospheric pressure within a coating system; transferring each substrate from outside the coating system to inside the coating system though a transfer lock; heating each substrate in a heating zone before entering a coating zone; traversing the coating zone in a first direction of movement and applying a first coating layer to each substrate in the coating zone using expanding thermal plasma type of plasma enhanced chemical vapor deposition; traversing the coating zone a second time and applying a second coating layer to each substrate in the coating zone using expanding thermal plasma type of plasma enhanced chemical vapor deposition; determining if the coating zone is occupied or vacant; if the coating zone is vacant, purging a heater zone module with inert gas; and pumping the inert gas out of the coating zone through ports located in the coating zone.

Abstract: A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.

Abstract: An apparatus and a method for coating an inner wall of a metal tube are provided. The apparatus for coating an inner wall of a metal tube includes mounting posts on which both end openings of a metal tube are mounted and configured to block the inside of the metal tube from the ambient air so that a pressure in the metal tube is adjustable by the vacuum exhaust and inflow of process gases, a sputtering target metal tube installed inside the metal tube coaxially with the metal tube, a pulse electromagnet installed around an outside perimeter of the metal tube coaxially with the metal tube to apply a pulse magnetic field in an axial direction of the metal tube, an electromagnetic pulse power supply unit configured to apply pulse power to the pulse electromagnet, and a sputtering pulse power supply unit configured to synchronize a negative high-voltage pulse with the pulse power applied to the pulse electromagnet and apply to the sputtering target metal tube.

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Abstract: A method, apparatus and system for controlling the processing of a substrate within a process chamber are described herein. In some embodiments, a method of controlling a substrate process within a process chamber includes determining a position of a moveable magnetron in the process chamber relative to a reference location on a surface of the substrate and modulating a power parameter of at least one power supply affecting substrate processing based on the determined position of the magnetron to control, for example, at least one of a deposition rate or an etching rate of the substrate processing. In one embodiment, the modulated power parameter is a power set point of at least one of a direct current (DC) source power, a radio frequency (RF) bias power, a DC shield bias voltage, or an electromagnetic coil current of the at least one power supply.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, a drain electrode, a first protective layer, and a second protective layer. The gate electrode is disposed on a substrate. The metal oxide semiconductor layer is disposed on a gate insulating layer and electrically connects the source electrode and the drain electrode. The first protective layer disposed on the metal oxide semiconductor layer has a first oxygen vacancy concentration. The second protective layer disposed on the first protective layer has a second oxygen vacancy concentration. A boundary area located between the first and second protective layers has a third oxygen vacancy concentration. The third oxygen vacancy concentration is respectively greater than the first oxygen vacancy concentration and the second oxygen vacancy concentration.

Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one yttrium (Y) inclusive high index nitrided dielectric layer. In certain example embodiments, the yttrium inclusive high index nitrided dielectric layer(s) may be of or include one or more of YZrSiAlN, YZrSiN, YSiN, and/or YSiAlN. The high index layer may be a transparent dielectric high index layer, with a high refractive index (n) and low k value, in preferred embodiments and may be provided for antireflection purposes and/or visible transmission purposes, and/or for improving thermal stability. In certain example embodiments, the low-E coating may be used in applications such as monolithic or insulating glass (IG) window units, vehicle windows, or the like.

Abstract: Apparatus for providing a magnetic field within a process chamber are provided herein. In some embodiments, an apparatus for providing a magnetic field within a process chamber includes: an inner rotating mechanism including a first plate having a central axis, wherein the first plate includes and a first plurality of magnets and is rotatable about the central axis; and an outer lifting mechanism including a ring disposed proximate the first plate, the ring having a second plurality of magnets coupled to a bottom surface of the ring proximate the peripheral edge of the ring, wherein the ring is movable in a direction perpendicular to the first plate.

Abstract: A racetrack-shaped apparatus for generating a magnetic field on a target surface for magnetron sputtering, comprising on a magnetic base (a) a vertically magnetized center permanent magnet arranged straight; (b) vertically magnetized peripheral permanent magnets surrounding the center permanent magnet; (c) vertically magnetized first intermediate permanent magnets, horizontally magnetized second intermediate permanent magnets and vertically magnetized third intermediate permanent magnets arranged on both sides of the center permanent magnet; and (d) vertically magnetized fourth intermediate permanent magnets arranged separately from both longitudinal ends of the center permanent magnet; each second intermediate permanent magnet being arranged with one magnetic pole opposing a near-target side surface portion of each first intermediate permanent magnet.

Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.

Abstract: The present invention provides a method for cleaning a carbon coating film, which can clean the carbon coating film that is formed on each portion of a plasma CVD device, and provides the plasma CVD device. The plasma CVD device 1 includes: first and second sealing members 2a and 2b which are formed of insulators and seal both ends of a workpiece W or a dummy workpiece W?, respectively; an anode 3; decompression units 26 which decompress the inside of the workpiece W or the dummy workpiece W?; a source-gas supply unit 6 which supplies a source gas to the inside of the workpiece W; a power source 27; and an oxygen-gas supply unit 8 which supplies oxygen gas to the inside of the dummy workpiece W?.

Abstract: In one aspect, a system of depositing a film on a substrate is disclosed, which includes at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive ionic species. The system further includes a pair of inner and outer concentric cylinders, where the outer cylinder has first and second openings positioned relative to the metallization source and the reactive source to allow entry of the metal atoms and the reactive ionic species into a metallization region and a reaction region, respectively, between the two cylinders. At least one mount is coupled to the inner cylinder for mounting the substrate thereto such that said substrate is in radiative thermal communication with the inner surface of the outer cylinder, said inner cylinder being rotatable for moving the substrate between the two regions so as to expose the substrate alternatingly to said metal atoms and said reactive ionic species.

Abstract: A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD).

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: A photovoltaic (PV) module can include a plurality of solar cells and circuitry configured to switch between a first state in which output voltage from the PV module includes voltage from the plurality of solar cells and a second state in which the output voltage includes voltage from fewer that all the plurality of solar cells.

Abstract: So as to control the operation of a sputter target during the lifetime of the target and under HIPIMS operation, part of a magnet arrangement associated to the target is retracted from the target whereas a second part II of the magnet arrangement is, if at all, retracted less from the addressed backside during the lifetime of the target. Thereby, part I is closer to the periphery of target than part II, as both are eccentrically rotated about a rotational axis.

Abstract: A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.

Abstract: Systems and methods for improving doping and/or deposition uniformity using a tunable electromagnetic field generation device are provided. In an exemplary embodiment, the system includes a chamber configured to contain a semiconductor wafer, a plasma generator, and a gas inlet, and an exhaust gas outlet. The gas inlet permits a controlled flow of a gas into the chamber through a wall of the chamber and the exhaust gas outlet permits exhausting of gas from the chamber. The system further includes a wafer support structure configured to support the semiconductor wafer during a doping or deposition process and an electromagnetic structure positioned within the chamber and at least partially surrounding an upper surface of the wafer support structure.

Abstract: An end-block for rotatably carrying a sputtering target tube and for rotatably restraining a magnet bar inside the sputtering target tube includes a receptacle for receiving a magnet bar fitting. The receptacle comprises a first part of a signal connector arranged to receive a second part of a signal connector from the magnet bar fitting, and allow a signal connector between the end-block and the magnet bar to be formed. The end-block is adapted for providing protection means to the signal connector for protecting it from degradation, destruction or interference of a power and/or data signal transmitted between the end-block and the magnet bar, due to surrounding cooling fluid and/or surrounding high energy fields. The disclosure provides a corresponding magnet bar, and a method for adjusting a magnetic configuration of a magnet bar in a cylindrical sputtering apparatus.

Abstract: Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.

Abstract: Provided is a method for manufacturing an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration by a sputtering method. The method comprises the steps of cleaving pellets and aggregates of atoms from a sputtering target containing indium, an element M (aluminum, gallium, yttrium, or tin), and zinc, depositing the pellets and the aggregates of atoms on a substrate, and then filling a gap between the pellets by the aggregates of atoms with lateral growths.

Abstract: A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

Abstract: According to an embodiment, a processing apparatus includes a generator mount, a first-object mount, and a first collimator. A particle generator capable of emitting particles is placed on the generator mount. A first object is placed on the first-object mount. The first collimator is placed between the generator mount and the first-object mount, and has first walls and second walls. In the first collimator, the first walls and the second walls form first through holes extending in a first direction from the generator mount to the first-object mount. Each of the second walls is provided with at least one first passage.

Abstract: A method for casting a reactive material PVD target, as well as targets thus obtained and a mold for casting. The method includes providing a mold defining an opening, placing a reactive material ingot in to a reservoir (140) proximate the mold, forming a vacuum and melting the reactive material in the reservoir, heating the mold to above a casting temperature and forming a vacuum therein, introducing molten reactive material from the reservoir into the opening and cooling the mold to form the PVD target.

Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.

Abstract: The present invention discloses a process for the manufacture of a thin-film multilayered coating used in treating biomedical substrates and a coating in multilayered thin-film form (S/TiN/Ti/TiZr) to treat biomedical substrates used in surgical implants.

Abstract: A sputtering cathode includes a magnet array having an outer, ring magnet surrounding an inner, disk magnet. A sputtering target is positioned on one side of the magnet array covering a side of the ring magnet and a side of the disk magnet, and a magnetic keeper disk is positioned between the sputtering target and the disk magnet. A cooling well positioned between the ring magnet and the disk magnet is in contact with part of the sputtering target. One or more cooling tubes is/are coupled to the cooling well. An outer body flange surrounds the one or more cooling tubes and contacts a side of the ring magnet opposite the sputtering target. An inner body flange, surrounded by the outer body flange, contacts a side of the disk magnet opposite the sputtering target.

Abstract: The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof.

Abstract: A nanosynthesis apparatus includes an outer tube and an inner tube with surfaces that oppose each other across a gap as part of a reaction chamber. A deposition fluid flows along the reaction chamber to grow nanostructures such as graphene or carbon nanotubes on a substrate in the reaction chamber. The reaction chamber may have an annular cross-section, and the growth substrate may wrap around the inner tube in a helical manner. This configuration can allow a flexible film substrate to travel through the reaction chamber along a path that is significantly longer than the length of the reaction chamber while maintaining a uniform gap between the substrate and the reaction chamber wall, which can facilitate a uniform temperature distribution and fluid composition across the width of the substrate.

Abstract: According to one embodiment, in a method for manufacturing a semiconductor device, a semiconductor chip is provided on a first surface of a substrate having the first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. A resin that seals the first surface of the semiconductor chip is formed on the semiconductor chip. A conductive film electrically connectable to a ground potential source is formed on an upper surface of the resin and a side surface of the resin. A metal oxide film or a metal nitride film is formed on the conductive film by depositing metal on the conductive film in an environment containing oxygen or nitrogen.

Abstract: An electronic device able to identify fingerprints ultrasonically includes a substrate, a fingerprint identification structure, and an adhesive layer. The fingerprint identification structure includes a thin film transistor (TFT) substrate and a flexible printed circuit (FPC). The FPC includes a first portion and a second portion. The first portion is located on a surface of the TFT substrate facing away from the substrate. The second portion is extended from an end of the first portion to be electrically connected to a surface of the TFT substrate facing the substrate. The second portion is separated from the adhesive layer. A space is defined between the second portion and the substrate. The adhesive layer is susceptible to deformation and decomposition from environmental conditions.

Abstract: A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behind the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. In certain embodiments, the movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone. In certain embodiments, magnet power and/or speed varies as function of direction of magnet travel.

Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield configured for use in a processing chamber for processing a substrate having a given diameter includes: a cylindrical body having an upper portion and a lower portion; an annular heat transfer channel disposed within the upper portion; and a cover ring section extending radially inward from the lower portion and having an annular leg extending from a bottom surface of the cover ring section, wherein the annular leg is configured to interface with a deposition ring to form a tortuous path between the bottom surface and the deposition ring.

Abstract: Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 1:2 to about 1:1.6.

Abstract: An implantable medical device that is fabricated from materials that present a blood or body fluid or tissue contact surface that has controlled heterogeneities in material constitution. An endoluminal stent-graft and web-stent that is made of a monolithic material formed into differentiated regions defining structural members and web regions extending across interstitial spaces between the structural members. The endoluminal stent-graft is characterized by having controlled heterogeneities at the blood flow surface of the stent.

Abstract: An evaporation apparatus includes: a substrate holding section configured to hold a substrate; an evaporation mask having an opening part at a position which is opposite to one surface of the substrate; an evaporation source configured to supply the one surface with evaporated particles via the opening part and to form a film of the evaporated particles on the one surface exposed from the opening part; and a film thickness correction means configured to block a portion of an ejection path of the evaporated particles from the evaporation source toward the opening part and configured to correct a thickness of the film by changing a position at which the ejection path is blocked over time.

Abstract: A shield mask mounting fitting includes a shied mask to be mounted on a chamber wall of a sputtering apparatus, the shield mask including a fixing hole, a fixing bolt connecting the shield mask to the chamber wall through the fixing hole, a cap hook surrounding a top of the fixing bolt, a bushing extending between a surface of the shield mask and the cap hook, and a shield cap engaged with the cap hook and covering the top of the fixing bolt, the shield cap extending beyond the cap hook to omnidirectionally cover a periphery of the fixing hole, wherein one of the cap hook and the shield cap has an asymmetric structure with respect to an axis extending through a center of the fixing bolt.