Electrical Contact Material Patents (Class 204/192.17)
  • Publication number: 20110180130
    Abstract: Certain example embodiments incorporate a “hybrid” design for the front electrode of solar cells, which advantageously combines naturally textured pyrolytic tin oxide and highly-conductive sputtered indium tin oxide (ITO). In certain example embodiments of this invention, a method of making a front electrode superstrate for a solar cell is provided. A glass substrate is provided. A layer of tin oxide is pyrolytically deposited on the glass substrate, with the layer of tin oxide being textured as a result of the pyrolytic deposition and with the layer of tin oxide being haze producing. A layer of indium tin oxide (ITO) is sputter-deposited on the layer of tin oxide, with the layer of ITO being generally conformal with respect to the layer of tin oxide. An amorphous silicon (a-Si) thin film layer stack is formed on the layer of ITO in making the front electrode superstrate.
    Type: Application
    Filed: January 22, 2010
    Publication date: July 28, 2011
    Applicant: Guardian Industries Corp.
    Inventors: Alexey Krasnov, Willem den Boer
  • Publication number: 20110126875
    Abstract: Methods for sputter depositing a transparent conductive layer and a conductive contact layer are provided in the present invention. In one embodiment, the method includes forming a transparent conductive layer on a substrate by materials sputtered from a first target disposed in a reactive sputter chamber, and forming a conductive contact layer on the transparent conductive layer by materials sputtered from a second target disposed in the reactive sputter chamber.
    Type: Application
    Filed: December 1, 2009
    Publication date: June 2, 2011
    Inventors: Hien-Minh Huu Le, Valery V. Komin, David Tanner, Mohd Fadzli Anwar Hassan, Tzay-Fa Su, Dapeng Wang
  • Publication number: 20110094884
    Abstract: A filter includes a membrane having a plurality of nanochannels formed therein. A first surface charge material is deposited on an end portion of the nanochannels. The first surface charge material includes a surface charge to electrostatically influence ions in an electrolytic solution such that the nanochannels reflect ions back into the electrolytic solution while passing a fluid of the electrolytic solution. Methods for making and using the filter are also provided.
    Type: Application
    Filed: October 28, 2009
    Publication date: April 28, 2011
    Inventors: John M. Cotte, Christopher V. Jahnes, Hongbo Peng, Stephen M. Rossnagel
  • Publication number: 20110089559
    Abstract: A method of producing a semiconductor device is provided, the semiconductor device including a substrate, a semiconductor layer and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.
    Type: Application
    Filed: October 21, 2009
    Publication date: April 21, 2011
    Inventors: Evelyn SCHEER, Fabio PIERALISI, Marcus BENDER
  • Publication number: 20110081503
    Abstract: A method of integrating a fluorine-based dielectric with a metallization scheme is described. The method includes forming a fluorine-based dielectric layer on a substrate, forming a metal-containing layer on the substrate, and adding a buffer layer or modifying a composition of the fluorine-based dielectric layer proximate an interface between the fluorine-based dielectric layer and the metal-containing layer.
    Type: Application
    Filed: October 6, 2009
    Publication date: April 7, 2011
    Inventors: Jianping ZHAO, Lee CHEN
  • Patent number: 7901545
    Abstract: An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure >50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.
    Type: Grant
    Filed: March 26, 2004
    Date of Patent: March 8, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Frank M. Cerio, Jr., Jacques Faguet, Bruce D. Gittleman, Rodney L. Robison
  • Publication number: 20110053045
    Abstract: Disclosed is a solid oxide fuel cell, including a polygonal tubular support an outer surface of which has a plurality of planes, a plurality of unit cells respectively formed on the plurality of planes of the tubular support, inner connectors for connecting the plurality of unit cells in series, and a pair of outer connectors for connecting the plurality of unit cells connected in series to a current collector, so that respective unit cells are connected in series on the planes of the tubular support, thus exhibiting excellent cell performance and high power density per unit volume, and maintaining high voltage upon collection of current to thereby reduce power loss due to electrical resistance. A method of manufacturing the solid oxide fuel cell is also provided.
    Type: Application
    Filed: October 30, 2009
    Publication date: March 3, 2011
    Inventors: Sung Han KIM, Jae Hyuk Jang, Jong sik Yoon, Kyong Bok Min, Eon Soo Lee, Han Wool Ryu, Hong Ryul Lee, Jong Ho Chung, Jae Hyoung Gil
  • Publication number: 20110031119
    Abstract: The present invention discloses a plastic potentiometric ion-selective sensor based on field-effect transistors which can be fabricated to form the miniaturized component via sputtering and/or printing method. A plastic potentiometric ion-selective sensor doesn't need an additional bias voltage to convert the signals. The disclosed plastic sensor comprises a plastic substrate, at least one working electrode formed on the plastic substrate, a reference electrode printed on the substrate, and a golden finger printed on the plastic substrate. The golden finger is for electrically coupling with the external world and for outward transmission of signals detected at the working electrode and the reference electrode. The disclosed plastic potentiometric ion-selective sensor is replaceable.
    Type: Application
    Filed: August 6, 2009
    Publication date: February 10, 2011
    Inventors: Hsiung Hsiao, KuoTong Ma, Li Te Yin, Shen Kan Hsiung
  • Publication number: 20110031110
    Abstract: The subject invention provides conductive stripes, suitable for use as electrodes, and methods of making conductive stripes.
    Type: Application
    Filed: October 19, 2010
    Publication date: February 10, 2011
    Inventors: Yi Wang, Timothy P. Henning, Edmund T. Marciniec
  • Publication number: 20110024285
    Abstract: An alkali-containing transition metal sputtering target, the method of making the same, and the method of manufacturing a solar cell using the same.
    Type: Application
    Filed: July 30, 2009
    Publication date: February 3, 2011
    Inventor: Daniel R. Juliano
  • Publication number: 20100326491
    Abstract: A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.
    Type: Application
    Filed: June 3, 2010
    Publication date: December 30, 2010
    Applicant: First Solar, Inc.
    Inventors: Long Cheng, Akhlesh Gupta, Anke Abken, Benyamin Buller
  • Publication number: 20100326818
    Abstract: The invention provides a method of manufacturing a semiconductor device and a sputtering apparatus which improve the composition of a film formed by a metal and a reactive gas without increasing the number of steps. An embodiment includes the steps of: placing a substrate on a substrate holder in a process chamber; and sputtering a target in the process chamber by applying electric power thereto while feeding a first reactive gas and a second reactive gas having higher reactivity than that of the first reactive gas into the process chamber, to form a film containing a target material on the substrate. The step of forming a film is conducted by feeding at least the first reactive gas from a first gas feed opening formed near the target, and by feeding the second reactive gas from a second gas feed opening formed at a position with the distance from the target larger than that of the first gas feed opening.
    Type: Application
    Filed: July 23, 2010
    Publication date: December 30, 2010
    Inventors: Manabu Ikemoto, Nobuo Yamaguchi, Kimiko Mashimo, Kazuaki Matsuo
  • Publication number: 20100294650
    Abstract: A process for producing a liquid crystal display device that includes at least a pair of substrates holding a liquid crystal layer therebetween and a pixel electrode superimposed on the liquid crystal layer side of the pair of substrates, the pixel electrode on at least one of the pair of substrates being formed of a transparent electroconductive film made of zinc oxide as a fundamental constituent material, the process includes: a step of forming a zinc oxide transparent electroconductive film on the substrate by sputtering, using a target of a zinc oxide series material to form the pixel electrode, wherein, in the step of forming the pixel electrode, sputtering is performed in an atmosphere containing two or three materials selected from the group consisting of hydrogen gas, oxygen gas, and water vapor.
    Type: Application
    Filed: January 20, 2009
    Publication date: November 25, 2010
    Applicant: ULVAC, INC.
    Inventors: Hirohisa Takahashi, Satoru Ishibashi
  • Patent number: 7837837
    Abstract: The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. This increase in electrical lead conductivity is accomplished by fabricating the electrical lead upon an epitaxially matched seed layer, such that the crystalline microstructure of the electrical lead material has fewer grain boundaries, whereby the electrical conductivity of the lead material is increased. In a preferred embodiment, the electrical lead material is comprised of Rh, which has an FCC crystal structure, and the seed layer is comprised of a metal, or metal alloy having a BCC crystal structure with unit cell lattice constant dimensions that satisfy the relationship that abcc is approximately equal to 0.816afcc. In various embodiments, the seed layer is comprised of VMo or VW.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: November 23, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Michael Andrew Parker, Mustafa Pinarbasi, Robert Otto Schwenker
  • Publication number: 20100285391
    Abstract: An electrolyte-electrode assembly (MEA) includes: an electrolyte; an anode side electrode and a cathode side electrode formed so as to sandwich the electrolyte via intermediate layers. The anode side electrode has a thickness set to 1 ?m, for example. A method for manufacturing the electrolyte-electrode assembly, i.e., the MEA includes a step for forming the anode side electrode by sputtering.
    Type: Application
    Filed: December 12, 2008
    Publication date: November 11, 2010
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Yoshikatsu Higuchi, Yuji Saito
  • Publication number: 20100269907
    Abstract: A thin-film solar cell has a rear electrode layer formed of at least 50 atom % of Mo, which in addition to the common contaminants includes 0.1 to 45 atom % of at least one element from the group of Ti, Zr, Hf, V, Nb, Ta, and W, 0 to 7.5 atom % of Na, and 0 to 7.5 atom % of at least one element forming a compound with Na that has a melting point >500 C. The rear electrode layer has good long-term resistance and bonding with the CIGS absorber layer. In addition, the constancy of the alkali metal integration in the absorber layer is improved.
    Type: Application
    Filed: December 16, 2008
    Publication date: October 28, 2010
    Inventors: Harald Lackner, Gerhard Leichtfried, Nikolaus Reinfried, Jörg Winkler
  • Patent number: 7820020
    Abstract: A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.
    Type: Grant
    Filed: May 25, 2005
    Date of Patent: October 26, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Karl M. Brown, John Pipitone, Vineet Mehta, Ralf Hofmann
  • Publication number: 20100258433
    Abstract: A film forming method for a transparent electrically conductive film that forms a zinc oxide-based transparent electrically conductive film on a substrate by sputtering using a target containing a zinc oxide-based material, performing the sputtering in a reactive gas atmosphere that contains two types or three types selected from among a group consisting of hydrogen gas, oxygen gas and water vapor.
    Type: Application
    Filed: December 17, 2008
    Publication date: October 14, 2010
    Applicant: ULVAC, INC.
    Inventors: Hirohisa Takahashi, Satoru Ishibashi
  • Publication number: 20100254067
    Abstract: A method of manufacturing electronic ceramic components, especially multilayer ceramic components, by applying a green ceramic layer through chemical coating methods on a mesh electrode of at least one sheet of conductive mesh to achieve extended ceramic layer thickness range, improved thermal conductivity, and improved mechanical strength of the components. The green ceramic coated mesh electrode can be wound up into a cylindrical format or stacked up into a multilayer format, then sintered into a multilayer component body. A counter electrode of an impregnated conductive substance or a deposited conductive layer is formed on the top of sintered ceramic layer separately with the sintering of the ceramic active layer to eliminate the internal stresses caused by conventional co-firing process.
    Type: Application
    Filed: April 4, 2009
    Publication date: October 7, 2010
    Inventor: Frank Wei
  • Patent number: 7799180
    Abstract: Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C.
    Type: Grant
    Filed: November 14, 2003
    Date of Patent: September 21, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Jiutao Li, Allen McTeer
  • Publication number: 20100233496
    Abstract: It is to provide a method for manufacturing a metal electrode having transition metal oxide coating layer and a metal electrode manufactured thereby, which eliminates a contact resistance problem and simultaneously improves electric conductivity of the electrode by using a one body electrode, which is not requiring separate current collector and binder, and further maintains pseudo-capacitance from the redox reaction by coating the metal surface with a transition metal oxide.
    Type: Application
    Filed: July 29, 2009
    Publication date: September 16, 2010
    Inventors: Hak-Kwan Kim, Seung-Hyun Ra, Jun-Hee Bae, Hyun-Chul Jung
  • Publication number: 20100227176
    Abstract: A transparent conductive film containing magnesium, at least one element (A) selected from the group consisting of carbon, silicon and boron, plus oxygen, and hydrogen. For example, this transparent conductive film may be manufactured by forming a film containing magnesium and an element (A) on a substrate and holding the film in an atmosphere containing water, which forming uses a target containing magnesium and a target containing the element (A) being at least one selected from the group consisting of carbon, silicon and boron.
    Type: Application
    Filed: October 10, 2008
    Publication date: September 9, 2010
    Inventors: Toshiro Kuji, Masafumi Chiba, Takamitsu Honjo, Koichiro Kotoda
  • Patent number: 7785449
    Abstract: A magnetron unit includes a plurality of first magnet elements each including first magnets which have the same polarity and are provided on two end portions of a yoke plate made of a magnetic material and a second magnet which has a polarity different from that of the first magnets and is provided on a middle portion of the yoke plate, a base plate on which a moving unit is placed to make each of the plurality of first magnet elements move in one direction, and a second magnet element which includes yoke plates made of a magnetic material and fixed to two end portions respectively, of the base plate, a magnet which has the same polarity as that of the second magnet and is placed on the yoke plate and a magnet which has the same polarity as that of the first magnet and is placed on the magnet.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: August 31, 2010
    Assignee: Canon Anelva Corporation
    Inventors: Tetsuya Endo, Noel Einstein Abarra
  • Publication number: 20100200537
    Abstract: The current invention provides a method of fabricating nano-pore structured dense Pt electrodes using particle masking and LB deposition methods. The pore size and TPB density are easily tunable by changing initial size of the masking silica particles and the spacing between them. Compared to the solid oxide fuel cell MEAs with porous Pt electrode deposited by conventional DC sputtering method, fuel cell MEAs with the nano structured electrodes fabricated according to the current invention showed thermal and microstructural stability and superior I-V performance at 400˜450° C. Also, EIS spectra showed significant improvement in the oxygen reduction kinetics by increasing the density of charge transfer sites at the TPB. A nearly linear scaling relationship between TPB density and fuel cell performance was also demonstrated.
    Type: Application
    Filed: December 17, 2009
    Publication date: August 12, 2010
    Inventors: Young Beom Kim, Yi Cui, Ching-Mei Hsu, Steve T. Connor, Friedrich B. Prinz
  • Publication number: 20100190094
    Abstract: The invention provides an electrode comprising an electrically conductive material having a surface capable of producing surface enhanced Raman scattering of incident light from a complex adsorbed at the surface of the electrode, the complex including the electrically conductive material combined with a second material that is substantially reducible and not substantially oxidizable. The surface of the electrode can be microroughened. The invention also includes a method for making various embodiments of the electrode, and a method of generating electricity using the electrode. In accordance with a further aspect of the invention, a fuel cell is provided including the electrode of the invention.
    Type: Application
    Filed: March 8, 2010
    Publication date: July 29, 2010
    Inventor: John J. McMahon
  • Patent number: 7754056
    Abstract: A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.
    Type: Grant
    Filed: June 9, 2006
    Date of Patent: July 13, 2010
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Shih-I Liu
  • Patent number: 7749361
    Abstract: A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: July 6, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Jie Chen, Peijun Ding, Suraj Rengarajan, Ling Chen, Tram Vo
  • Publication number: 20100154878
    Abstract: The electrode according to the invention comprises a substrate, an indium tin oxide film and a semiconductor layer and is produced under a processing condition that the substrate is subjected to ITO sputtering in a sputter chamber at a temperature of less than 200° C., preferably without being treated with heat, and then undergoes a high temperature treatment so as to form a stable ITO film. By this way, a semiconductor layer could be also formed on the indium tin oxide film. The electrode structure so produced is resistant to high temperature and has a reduced resistance change ratio. The electrode structure is especially suited for being used in a dye-sensitized solar cell to enhance the photoelectric conversion efficiency thereof.
    Type: Application
    Filed: December 20, 2008
    Publication date: June 24, 2010
  • Patent number: 7736473
    Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.
    Type: Grant
    Filed: September 14, 2005
    Date of Patent: June 15, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Keith A. Miller, Anantha K. Subramani, Maurice E. Ewert, Tza-Jing Gung, Hong S. Yang, Vincent E. Burkhart
  • Publication number: 20100139955
    Abstract: A patterned substrate for a touch screen sensor assembly that includes a plurality of electrodes that are formed from a first transparent conductive layer that has a first surface resistivity. The substrate also has a plurality of traces that may be used to couple the electrodes controller associated with the touch screen sensor assembly. The traces are formed from a second conductive layer that has a second surface resistivity that is less than the surface resistivity of the first conductive layer. The first and second conductive layers may be formed from indium tin oxide (ITO) having different surface resistivities. A second, similarly configured substrate can be provided and may be spaced apart from the first substrate by a dielectric spacer.
    Type: Application
    Filed: December 2, 2009
    Publication date: June 10, 2010
    Inventors: Ding Hua Long, Hai Long Zhang, Ying Yu
  • Publication number: 20100141878
    Abstract: Exfoliation of an etching stopper is prevented. A color filter of the present invention includes an inorganic protection film (etching stopper) composed mainly of SnO2. Since the inorganic protection film as such not only has a high specific resistance but also has a linear expansion coefficient close to the linear expansion coefficient of a transparent electrode, the inorganic protection film is not exfoliated from the transparent electrode or the resin layer even if an object to be processed is heated. Since the inorganic protection film and the transparent electrode can be formed in the same film forming chamber, the time required to produce the color filter can be shortened as compared to in the conventional technique.
    Type: Application
    Filed: February 12, 2010
    Publication date: June 10, 2010
    Applicant: ULVAC, Inc.
    Inventors: Hirohisa TAKAHASHI, Isao SUGIURA, Atsushi OHTA, Satoru ISHIBASHI
  • Publication number: 20100136457
    Abstract: The present invention provides a gas diffusion electrode in which flooding therein is suppressed. The gas diffusion electrode includes: a membrane formed of conductive fibers; a layer formed of conductive fine particles existing while coming into contact with one of surfaces of the membrane; and a catalyst, in which the membrane formed of the conductive fibers includes a region carrying the catalyst and a region free from carrying the catalyst, the region carrying the catalyst including a surface of the membrane formed of the conductive fibers on an opposite side of a surface of the membrane formed of the conductive fibers, which is brought into contact with the layer formed of the conductive fine particles. The catalyst can be formed by a reactive sputtering method.
    Type: Application
    Filed: January 31, 2008
    Publication date: June 3, 2010
    Inventor: Kazuhiro Yamada
  • Patent number: 7725996
    Abstract: A method for producing an actuator device, comprising the steps of: forming a vibration plate on a substrate; and forming a piezoelectric element composed of a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate, wherein in the step of forming the piezoelectric element, the upper electrode is formed on the piezoelectric layer by sputtering, a temperature of 25 to 250 (° C.) and a pressure of 0.4 to 1.5 (Pa) are used during the sputtering, and upon the sputtering, the upper electrode having a thickness of 30 to 100 (nm), stress of 0.3 to 2.0 (GPa), and specific resistance of 2.0 (×10?7 ?·m) or less is formed.
    Type: Grant
    Filed: August 9, 2006
    Date of Patent: June 1, 2010
    Assignee: Seiko Epson Corporation
    Inventors: Xin-Shan Li, Tsutomu Nishiwaki
  • Publication number: 20100129693
    Abstract: A method of making a solid oxide fuel cell (SOFC) includes providing a solid oxide electrolyte and depositing at least one electrode on the electrolyte by PVD, such as sputtering. A method of making an interconnect for a fuel cell stack includes providing an electrically conductive interconnect, and depositing a layer on the interconnect by PVD, such as depositing a LSM barrier layer by sputtering. The SOFC and the interconnect may be located in the same fuel cell stack.
    Type: Application
    Filed: November 20, 2009
    Publication date: May 27, 2010
    Inventors: Dien Nguyen, Tad Armstrong, Emad El Bataw, Avinash Verma, Ravi Oswal, K.R. Sridhar, Ujwal Deshpande
  • Patent number: 7722966
    Abstract: Nano-composite materials are disclosed. An exemplary method of producing a nano-composite material may comprise co-sputtering a transition metal and a refractory metal in a reactive atmosphere. The method may also comprise co-depositing a transition metal and a refractory metal composite structure on a substrate. The method may further comprise thermally annealing the deposited transition metal and refractory metal composite structure in a reactive atmosphere.
    Type: Grant
    Filed: May 11, 2005
    Date of Patent: May 25, 2010
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Se-Hee Lee, C. Edwin Tracy, J. Roland Pitts
  • Publication number: 20100123103
    Abstract: A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using ?-Al2O3 as a dopant material.
    Type: Application
    Filed: November 18, 2009
    Publication date: May 20, 2010
    Inventors: Shina Kirita, Toshitaka Kawashima, Takahiro Nagata, Yuichi Kamori
  • Publication number: 20100098970
    Abstract: A diamond substrate having a contact, wherein the contact comprises a diamond-like-carbon (DLC) layer on at least part of a surface of the diamond substrate; and at least one metal layer on at least part of the surface of the DLC layer. Methods for producing the same and devices comprising such a substrate are also described.
    Type: Application
    Filed: October 15, 2009
    Publication date: April 22, 2010
    Inventor: Arnaldo Galbiati
  • Publication number: 20100089444
    Abstract: Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. The front electrode has a transparent conductive oxide (TCO) film having first and second layers (continuous or discontinuous) of the same material (e.g., zinc oxide, zinc aluminum oxide, indium-tin-oxide, or tin oxide), where the first TCO layer is sputter-deposited using a ceramic sputtering target(s) and the second TCO layer of the same material is sputter-deposited using a metallic or substantially metallic sputtering target(s). This allows the better quality TCO of the film, deposited more slowly via the ceramic target(s), to be formed using the ceramic target and the lesser quality TCO of the film to be deposited more quickly and cost effectively via the metallic target(s).
    Type: Application
    Filed: October 15, 2008
    Publication date: April 15, 2010
    Applicant: Guardian Industries Corp.
    Inventors: Scott V. Thomsen, Yiwei Lu, Alexey Krasnov
  • Patent number: 7686926
    Abstract: A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
    Type: Grant
    Filed: April 29, 2005
    Date of Patent: March 30, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Tza-Jing Gung, Xinyu Fu, Arvind Sundarrajan, Edward P. Hammond, IV, Praburam Gopalraja, John C. Forster, Mark A. Perrin, Andrew S. Gillard
  • Patent number: 7678241
    Abstract: The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.
    Type: Grant
    Filed: March 4, 2005
    Date of Patent: March 16, 2010
    Assignees: Seiko Epson Corporation, Youtec Co., Ltd.
    Inventors: Takeshi Kijima, Eiji Natori, Mitsuhiro Suzuki
  • Patent number: 7674707
    Abstract: Devices and methods are presented to fabricate diffusion barrier layers on a substrate. Presently, barrier layers comprising a nitride layer and a pure metal layer are formed using a physical vapor deposition (PVD) process that requires multiple ignition steps, and results in nitride-layer thicknesses of no less than 2 nm. This invention discloses devices and process to produce nitride-layers of less than <1 nm, while allowing for formation of a pure metal layer on the nitride-layer without re-igniting the plasma. To achieve this, the flow of nitrogen gas is cut off either before the plasma is ignited, or before the formation of a continuous-flow plasma. This ensures that a limited number of nitrogen atoms is deposited in conjunction with metal atoms on the substrate, thereby allowing for controlled thickness of the nitride layer.
    Type: Grant
    Filed: December 31, 2007
    Date of Patent: March 9, 2010
    Assignee: Texas Instruments Incorporated
    Inventors: Noel M. Russell, Satyavolu Srinivas Papa Rao, Stephan Grunow
  • Publication number: 20100038234
    Abstract: A multilayer thin film formation method and a multilayer thin film formation apparatus that improve dielectric characteristics and piezoelectric characteristics of a thin film formed from a lead-based perovskite complex oxide. The multilayer thin film formation method includes formation of a lower electrode layer (32b) containing a noble metal above a substrate (S) by sputtering a lower electrode layer target (TG2), and superposing a lead-based complex oxide layer (33) on the lower electrode layer (32b) by sputtering an oxide layer target (TG3) containing lead. The lower electrode layer (32b) has a thickness restricted to 10 to 30 nm, and the lead-based complex oxide layer (33) has a thickness restricted to 0.2 and 5.0 ?m.
    Type: Application
    Filed: December 17, 2007
    Publication date: February 18, 2010
    Applicant: ULVAC, INC.
    Inventors: Isao Kimura, Takehito Jinbo, Shin Kikuchi, Yutaka Nishioka, Koukou Suu
  • Publication number: 20100035152
    Abstract: Electrochemical cells or batteries featuring functional gradations, and having desirable, periodic configurations, and methods for making the same. One or more methods, in alone or in combination, are utilized to fabricate components of such electrochemical cells or batteries, which are designed to achieve certain thermal, mechanical, kinetic and spatial characteristics, and their effects, singly and in all possible combinations, on battery performance. The thermal characteristics relate to temperature distribution during charge and discharge processes. The kinetic characteristics relate to rate performance of the cells or batteries such as the ionic diffusion process and electron conduction. The mechanical characteristics relate to lifetime and efficiency of the cells or batteries such as the strength and moduli of the component materials. Finally, the spatial characteristics relate to the energy and power densities, stress and temperature mitigation mechanisms, and diffusion and conduction enhancements.
    Type: Application
    Filed: August 4, 2009
    Publication date: February 11, 2010
    Applicant: Sakti3, Inc.
    Inventors: Ann Marie Sastry, Fabio Albano, Chia-Wei Wang
  • Publication number: 20100021787
    Abstract: The processes include: a layer superposition step in which the step of sputtering or vapor-depositing a mixture layer including a first pore-forming metal and a catalyst metal on a substrate and the step of forming an interlayer of a second pore-forming metal or a fibrous-carbon interlayer are alternately conducted repeatedly two or more times to thereby form a multilayer structure containing mixture layers and interlayers; and a pore formation step in which after the layer superposition step, the multilayer structure is subjected to a pore formation treatment.
    Type: Application
    Filed: July 24, 2009
    Publication date: January 28, 2010
    Inventors: Mei Wu, Tsuyoshi Kobayashi, Mutsuki Yamazaki, Yoshihiko Nakano
  • Publication number: 20100021659
    Abstract: A sensor utilizing a non-leachable or diffusible redox mediator is described. The sensor includes a sample chamber to hold a sample in electrolytic contact with a working electrode, and in at least some instances, the sensor also contains a non-leachable or a diffusible second electron transfer agent. The sensor and/or the methods used produce a sensor signal in response to the analyte that can be distinguished from a background signal caused by the mediator. The invention can be used to determine the concentration of a biomolecule, such as glucose or lactate, in a biological fluid, such as blood or serum, using techniques such as coulometry, amperometry, and potentiometry. An enzyme capable of catalyzing the electrooxidation or electroreduction of the biomolecule is typically provided as a second electron transfer agent.
    Type: Application
    Filed: September 29, 2009
    Publication date: January 28, 2010
    Inventors: Benjamin J. Feldman, Adam Heller, Ephraim Heller, Fei Mao, Josehp A. Vivolo, Jeffery V. Funderburk, Fredric C. Colman, Rajesh Krishnan
  • Publication number: 20100014145
    Abstract: Disclosed is a method of preparing an electrode, which can lead to uniform electrochromism of a lithium nickel oxide layer by applying a voltage in all directions of the electrode during a formatting process, an electrode prepared by the same, and an electrochromic device including the electrode.
    Type: Application
    Filed: January 22, 2008
    Publication date: January 21, 2010
    Inventors: Ki-Seok Jang, Hyun-Woo Shin, Jae-Hong Kim
  • Publication number: 20100003511
    Abstract: A transparent electrode multilayer film has at least one group III doped ZnO layer and at least one metal layer, where layers of doped ZnO alternate with metal layers. When a plurality of group III doped ZnO layers are present, the doped ZnO layers can have the same or different dopants and one or more dopants can be present in a doped ZnO layer. When a plurality of metal layers is present, the layers can be of the same or different metals, and a metal layer can be a single metal or a combination of two or more metals. The multilayer film can be free standing, but generally includes a substrate. Advantageous substrates are transparent and can be flexible for use as a flexible electrode. A method to form a transparent conductive multilayer film involves depositing at least one layer of a group III doped ZnO and at least one metal layer on a substrate.
    Type: Application
    Filed: July 2, 2009
    Publication date: January 7, 2010
    Applicant: University of Florida Research Foundation, Inc.
    Inventor: Franky So
  • Patent number: 7641998
    Abstract: An electrically conductive separator element and assembly for a fuel cell which comprises an electrically conductive substrate having a monoatomic layer coating overlying the substrate. The monatomic layer coating may comprise an electrically conductive material, for example, a noble metal, desirably Ru, Rh, Pd, Ag, Ir, Os and preferably Au. Methods of making such separator elements and assemblies are also provided.
    Type: Grant
    Filed: September 20, 2006
    Date of Patent: January 5, 2010
    Assignee: GM Global Technology Operations, Inc.
    Inventors: Gayatri Vyas, Mahmoud H. Abd Elhamid, Youssef M. Mikhail
  • Publication number: 20090285978
    Abstract: An improved ion conductor layer for use in electrochromic devices and other applications is disclosed. The improved ion-conductor layer is comprised of at least two ion transport layers and a buffer layer, wherein the at least two ion transport layers and the buffer layer alternate within the ion conductor layer such that the ion transport layers are in communication with a first and a second electrode. Electrochromic devices utilizing such an improved ion conductor layer color more deeply by virtue of the increased voltage developed across the ion conductor layer prior to electronic breakdown while reducing the amount of electronic leakage. Also disclosed are methods of making electrochromic devices incorporating the improved ion conductor layer disclosed herein and methods of making ion conductors for use in other applications.
    Type: Application
    Filed: July 14, 2009
    Publication date: November 19, 2009
    Applicant: SAGE Electrochromics, Inc.
    Inventors: Mark Samuel Burdis, Bryan D. Greer, Douglas Glenn John Weir
  • Publication number: 20090272642
    Abstract: Please amend the Abstract of the Disclosure to read as follows. In accordance with 37 CFR §1.72, the abstract is submitted herewith on a separate sheet of paper, following page 9 of this amendment.
    Type: Application
    Filed: October 10, 2008
    Publication date: November 5, 2009
    Inventors: Ekkehart Reinhold, Steffen Mosshammer, Martin Dimer, Roland Koenig, Joerg Faber, Hans-Christian Hecht