Electrical Contact Material Patents (Class 204/192.17)
  • Publication number: 20090266599
    Abstract: A circuit board having high thermal conductivity comprises a substrate, a plurality of thermal conductive insulating layers, a patterned electrical conductive layer, a plurality of through-holes and a soldering layer. The substrate has an upper surface and a lower surface; the thermal conductive insulating layers are respectively formed on the upper surface and the lower surface of the substrate. The patterned electrical conductive layer is disposed on the surfaces of the thermal conductive insulating layers. The plurality of through-holes are extended through the substrate and electrically connected to the patterned electrical conductive layer, and the soldering layer is partially formed on the patterned electric conductive layer. The present invention also discloses a method for manufacturing the circuit board as above-mentioned.
    Type: Application
    Filed: August 5, 2008
    Publication date: October 29, 2009
    Applicant: Kinik Company
    Inventors: Ming-Chi Kan, Shao-Chung Hu
  • Publication number: 20090263966
    Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).
    Type: Application
    Filed: April 3, 2009
    Publication date: October 22, 2009
    Inventors: Juergen Weichart, Mohamed Elghazzali, Stefan Bammesberger, Dennis Minkoley
  • Publication number: 20090246385
    Abstract: A two step thin film deposition process is disclosed to provide for the simultaneous achievement of controlled stress and the achievement of preferred crystalline orientation in sputter-deposited thin films. In a preferred embodiment, a first relatively short deposition step is performed without substrate bias to establish the crystalline orientation of the deposited film followed by a second, typically relatively longer deposition step with an applied rf bias to provide for low or no stress conditions in the growing film. Sputter deposition without substrate bias has been found to provide good crystal orientation and can be influenced through the crystalline orientation of the underlying layers and through the introduction of intentionally oriented seed layers to promote preferred crystalline orientation. Conversely, sputter deposition with substrate bias has been found to provide a means for producing stress control in growing films.
    Type: Application
    Filed: March 25, 2009
    Publication date: October 1, 2009
    Inventors: Valery FELMETSGER, Pavel N. LAPTEV
  • Patent number: 7588667
    Abstract: An iPVD system is programmed to deposit a barrier and/or seed layer using a Ru-containing material into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within an IPVD processing chamber. In the preferred embodiment, an IPVD apparatus having a frusto-conical ruthenium target equipped with a high density ICP source is provided.
    Type: Grant
    Filed: April 7, 2006
    Date of Patent: September 15, 2009
    Assignee: Tokyo Electron Limited
    Inventor: Frank M. Cerio, Jr.
  • Publication number: 20090218311
    Abstract: A method of fabricating a layer-structured catalysts at the electrode/electrolyte interface of a fuel cell is provided. The method includes providing a substrate, depositing an electrolyte layer on the substrate, depositing a catalyst bonding layer to the electrolyte layer, depositing a catalyst layer to the catalyst bonding layer, and depositing a microstructure stabilizing layer to the catalyst layer, where the bonding layer improves adhesion of the catalyst onto the electrolyte. The catalyst and a current collector is a porous catalyst and a fully dense current collector, or a fully dense catalyst and a fully dense current collector structure layer. A nano-island catalyst and current collector structure layer is deposited over the catalyst and current collector or over the bonding layer, which is deposited over the electrolyte layer. The fuel cell can be hydrogen-fueled solid oxide, solid oxide with hydrocarbons, solid sensor, solid acid, polymer electrolyte or direct methanol.
    Type: Application
    Filed: October 31, 2008
    Publication date: September 3, 2009
    Inventors: Xirong Jiang, Xu Tian, Friedrich B. Prinz, Stacey F. Bent, Joon Hyung Shim, Masayuki Sugawara, Hong Huang
  • Patent number: 7572658
    Abstract: A liquid crystal display panel manufacturing method includes forming at least one thin film on a flexible plastic substrate by sputtering at a temperature of about 80° C. to about 150° C. Sputtering can be in a chamber evacuated to about 1×10?6 Torr to about 9×10?6 Torr. Sputtering targets and films sputtered on substrates include materials that are conductive or insulating, organic or inorganic, metal or metal alloy, reflective metal or transparent conductive, or combinations thereof. Thin film and pattern formation employ photolithography with laminated or liquid films. Films may be sputtered on opposing sides of a substrate and may be multilayered.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: August 11, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sung-Jin Kim
  • Publication number: 20090195151
    Abstract: An organic electroluminescence type display apparatus according to an aspect of the present invention includes: a thin film transistor formed on an insulating substrate; and an organic EL device connected to the thin film transistor and including at least an anode, an electroluminescence layer, and a cathode stacked on each other in this order. The anode includes: an Al alloy film having conductivity and including at least one kind of Group 8 3d transition metals, and oxygen, the at least one kind of the Group 8 3d transition metals and the oxygen being added to aluminum; and an amorphous ITO film formed on the Al alloy film.
    Type: Application
    Filed: January 23, 2009
    Publication date: August 6, 2009
    Inventors: Kensuke Nagayama, Kazunori Inoue, Nobuaki Ishiga
  • Patent number: 7556719
    Abstract: A method of producing a wired circuit board that can prevent the electrostatic damage of the components mounted on the wired circuit board effectively, while preventing operation errors of the device caused by the static electricity. After a thin metal film is formed over an entire area of a front side of an insulating cover layer and an entire surface of a conductor layer at a terminal portion thereof by sputtering, a metal oxide layer is formed on the thin metal layer by an oxidation-by-heating method or by the sputtering. According to this method, since the semi-conductor layer comprising the thin metal film and the metal oxide layer is formed on the surface of the insulating cover layer, the electrostatic damage of the components mounted on the wired circuit board can be prevented effectively. Also, the operation errors of the device caused by the construction wherein only the thin metal film is formed can also be prevented effectively.
    Type: Grant
    Filed: April 28, 2004
    Date of Patent: July 7, 2009
    Assignee: Nitto Denko Corporation
    Inventors: Jun Ishii, Takeshi Yoshimi
  • Publication number: 20090166187
    Abstract: Proposed are a lithium-containing transition metal oxide target formed from a sintered compact of lithium-containing transition metal oxides showing a hexagonal crystalline system in which the sintered compact has a relative density of 90% or higher and an average grain size of 1 ?m or greater and 50 ?m or less, and a lithium-containing transition metal oxide target formed from a sintered compact of lithium-containing transition metal oxides showing a hexagonal crystalline system in which the intensity ratio of the (003) face, (101) face and (104) face based on X-ray diffraction using CuK? ray satisfies the following conditions: (1) Peak intensity ratio of the (101) face in relation to the (003) face is 0.4 or higher and 1.1 or lower; and (2) Peak ratio of the (101) face in relation to the (104) face is 1.0 or higher.
    Type: Application
    Filed: April 27, 2007
    Publication date: July 2, 2009
    Inventors: Ryuichi Nagase, Yoshio Kajiya
  • Publication number: 20090135109
    Abstract: In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB6 film, can be formed uniformly over a wide area on an electron injection layer by a rotary magnet sputtering apparatus.
    Type: Application
    Filed: November 19, 2008
    Publication date: May 28, 2009
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Patent number: 7527713
    Abstract: A quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor, preferably in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the gas sputtering the wafer. The coil array may include a tubular magnetic core, particularly useful for suppressing stray fields. A water cooling coil may be wrapped around the coil array to cool all the coils. The electromagnets can be powered in different relative polarities in a multi-step process.
    Type: Grant
    Filed: September 23, 2004
    Date of Patent: May 5, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Tza-Jing Gung, Mark A. Perrin, Andrew Gillard
  • Publication number: 20090107844
    Abstract: Embodiments of the present invention may provide a microchip applicable to an electrophoresis employing UV detection and a method of manufacturing the same. The microchip of the present invention has a glass channel plate, which is formed on an upper surface thereof with a loading channel and a separation channel and is provided on the upper surface thereof with an optical slit layer made of silicon except the channel region, and a glass reservoir plate, which is formed with sample solution reservoirs and buffer solution reservoirs. The loading channel and the separation channel are formed on the channel plate by deep reactive ion etching. The sample solution reservoirs and the buffer solution reservoirs are formed in the reservoir plate by sand blasting. The channel plate and the reservoir plate are combined by anodic bonding the optical slit layer and the reservoir plate. Electrodes for sample and electrodes for buffer are deposited by sputtering Pt with a shadow mask after anodic bonding.
    Type: Application
    Filed: October 29, 2007
    Publication date: April 30, 2009
    Inventors: Myung-Suk Chun, Tae Ha Kim
  • Publication number: 20090086920
    Abstract: One or more components of an x-ray target assembly are manufactured using an electroforming process. The electroforming is carried out by providing an electroforming apparatus that includes an electrolyte, a metal anode, and an electrically conductive cathode. The cathode includes an intermediate x-ray target assembly upon which the metal is to be deposited and/or an electrically conductive mold for forming a component of an x-ray target assembly. The x-ray target component (e.g., a substrate or focal track) is formed by submersing the cathode in the electrolyte and applying a voltage across the anode and the cathode to cause the metal from the anode to be electroformed on the intermediate target and/or the mold. The electroforming is continued until a desired thickness of metal is achieved. The electroforming process can be used to manufacture an x-ray target substrate, focal track, stem, barrier, or other metal layer of the target assembly.
    Type: Application
    Filed: September 30, 2007
    Publication date: April 2, 2009
    Inventors: David S.K. Lee, John E. Postman, Dennis Runnoe
  • Patent number: 7510634
    Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.
    Type: Grant
    Filed: November 10, 2006
    Date of Patent: March 31, 2009
    Assignee: Novellus Systems, Inc.
    Inventors: Erich R. Klawuhn, Robert Rozbicki, Girish A. Dixit
  • Patent number: 7504006
    Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.
    Type: Grant
    Filed: July 31, 2003
    Date of Patent: March 17, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Praburam Gopalraja, Jianming Fu, Xianmin Tang, John C. Forster, Umesh Kelkar
  • Publication number: 20090065741
    Abstract: The invention relates to a method and apparatus for the application of material to form a layer of an organic electroluminescent device. The material is sputter deposited typically from at least one target of material held in respect to a magnetron in a coating chamber. The magnetrons used can be unbalanced magnetrons and/or are provided with other magnetrons and/or magnet arrays in a closed field configuration. The material is found to be deposited in a manner which prevents or minimises damage to the device and hence reduces or removes the need for a barrier layer to be applied.
    Type: Application
    Filed: February 16, 2006
    Publication date: March 12, 2009
    Inventors: John Michael Walls, Desmond Gibson, William Young, Nalinkumar Patel, Nicoletta Anathassopoulou
  • Publication number: 20090061319
    Abstract: Disclosed are a silicon thin film anode for a lithium secondary battery having enhanced cycle characteristics and capacity and a preparation method thereof. A preparation method for a silicon thin film anode for a lithium secondary battery, comprises: preparing a collector including a metal; forming an anode active material layer including a silicon on the collector; forming one or more interface stabilizing layer, by annealing the collector and the anode active material layer under one of an inert atmosphere, a reduced atmosphere, and a vacuum atmosphere to react a metallic component of at least one of the collector and the anode active material layer with a silicon component of the anode active material layer at an interface therebetween; and forming a carbon coating layer on the anode active material layer by performing an annealing process in a hydrocarbon atmosphere.
    Type: Application
    Filed: August 27, 2008
    Publication date: March 5, 2009
    Inventors: Hyung-Sun Kim, Byung-Won Cho, Kyung-Yoon Chung, Joong-Kee Lee, Taeg-Kwan Kang, Young-Hwan Jung
  • Publication number: 20090011593
    Abstract: A capacitor assembly includes a semiconductor substrate having an interlayer insulation film on a first main surface of the semiconductor substrate, and a conductive barrier layer formed on the interlayer insulation film. The capacitor assembly also includes a contact plug electrically connected to the conductive barrier layer through the interlayer insulation film, and a lower electrode formed on the barrier layer. The capacitor assembly also includes a capacitor insulation film formed on the lower electrode, and an upper electrode formed on the capacitor insulation film. The capacitor insulation film is made from a ferroelectric material. The barrier layer is an amorphous film which includes titanium and aluminum.
    Type: Application
    Filed: September 10, 2008
    Publication date: January 8, 2009
    Inventor: Daisuke Inomata
  • Patent number: 7467447
    Abstract: In a SAW device comprising a piezoelectric single crystal substrate and electrodes on a surface thereof, the substrate is obtained by slicing a LiTaO3 or LiNbO3 material such that a plane containing axis X and perpendicular to a new axis Y obtained by rotating axis Y about axis X by an angle of 33°±9° becomes the substrate surface, and each electrode is a layered film including a titanium nitride layer and an aluminum layer thereon. The aluminum layer containing no grain boundaries ensures high efficiency, long life SAW devices experiencing no increase of electrical resistance.
    Type: Grant
    Filed: March 25, 2005
    Date of Patent: December 23, 2008
    Assignee: TDK Corporation
    Inventors: Masahiro Nakano, Shigeki Ohtsuka
  • Publication number: 20080280206
    Abstract: A process for realizing a positive electrode of a lithium-ion battery utilizes deposition by cathode sputtering in several steps. Two successive deposition steps are separated by a cooling of the electrode during its realization, a first intermediate step of sputtering the target without introducing oxygen, and a second intermediate step of sputtering the target while introducing oxygen. The electrode obtained is of amorphous vanadium oxide and exhibits good capacity and reversibility.
    Type: Application
    Filed: May 9, 2008
    Publication date: November 13, 2008
    Applicant: STMicroelectronics S.A.
    Inventor: Sami Oukassi
  • Publication number: 20080264776
    Abstract: A method of treating a gold film to form gold nitride is proposed, which includes the steps of: generating a nitrogen plasma with a radio frequency field and a power of less than or equal to about 2 kW; and treating said gold film with said nitrogen plasma. The method can be carried out using commercially available apparatus such as an etching machine. The radio frequency field is preferably between 10 and 17 MHz, and the power used to generate the nitrogen plasma is preferably less than or equal to 300 W. The gold film may be biased to achieve directional attack of the plasma. A further method of forming gold nitride is proposed which includes the step of sputtering from a gold target with a nitrogen plasma to form a film of gold nitride on a substrate.
    Type: Application
    Filed: June 3, 2005
    Publication date: October 30, 2008
    Inventors: Lidija Siller, Satheesh Krishnamurthy, Yimin Chao
  • Publication number: 20080253925
    Abstract: Provided are a target material for manufacturing an electrode film of a semiconductor device, methods of manufacturing the target material and manufacturing the electrode film. The target material comprises Al-RE alloy or Al—Ni-RE alloy, in which RE is a mixture of rare earth elements comprising La, Ce, Pr, and Nd.
    Type: Application
    Filed: December 17, 2007
    Publication date: October 16, 2008
    Inventors: Jianshe XUE, Ke LIANG
  • Publication number: 20080248430
    Abstract: A nano-carbon material field emission cathode plate is prepared by an oxidation-reduction reaction, which includes immersing a substrate having a first metal layer thereon in a solution of a second metal salt with a nano-carbon material dispersed therein. A difference between the two standard redox potentials of the first metal and the second metal is so great that ions of the second metal in the solution are reduced to elemental metal while the first metal is oxidized, and thus a layer of the second metal is formed on the first metal layer with the nano-carbon material partially embedded in the second metal layer.
    Type: Application
    Filed: July 18, 2007
    Publication date: October 9, 2008
    Inventors: Yih-Ming Liu, Yuh Sung, Ming-Der Ger, Yun-Chih Fan, Yu-Hsien Chou, Chun-Tin Lin
  • Patent number: 7431811
    Abstract: A ruthenium oxide electrode. The ruthenium oxide electrode includes a substrate, a ruthenium oxide film formed thereon, and a conductive wire connecting to the ruthenium oxide film. The invention also provides a method of fabricating the ruthenium oxide electrode.
    Type: Grant
    Filed: November 24, 2006
    Date of Patent: October 7, 2008
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung-Chuan Chou, Sheng-Hung Chen
  • Publication number: 20080230357
    Abstract: Provided herein are new methods for the fabrication of gold (Au) alloys and films containing metal or semimetal oxides such as oxides of vanadium (V), for example, Au—V2O5 for use in electrical, mechanical, and microelectromechanical systems (“MEMS”). An example embodiment provides a thin film of an alloy comprising Au—V2O5 in a MEMS for a contact switch. Also described herein are gold-metal oxide thin films for use in, e.g. wear-resistant MEMS. Measurements of contact force and electrical contact resistance between pairs of Au or Au—V films show that increased hardness and resistivity in the alloy films results in higher contact resistance and less adhesion than in pure Au.
    Type: Application
    Filed: March 21, 2008
    Publication date: September 25, 2008
    Inventors: Richard P. Vinci, Walter L. Brown, Thirumalesh Bannuru
  • Publication number: 20080213664
    Abstract: In a method of fabricating a battery, a substrate is annealed to reduce surface contaminants or even water of crystallization from the substrate. A series of battery component films are deposited on a substrate, including an adhesion film, electrode films, and an electrolyte film. An adhesion film is deposited on the substrate and regions of the adhesion film are exposed to oxygen. An overlying stack of cathode films is deposited in successive deposition and annealing steps.
    Type: Application
    Filed: March 2, 2007
    Publication date: September 4, 2008
    Inventors: Victor Krasnov, Kai-Wei Nieh, Jianchao Li
  • Publication number: 20080190760
    Abstract: An integrated copper deposition process, particularly useful for forming a copper seed layer in a narrow via prior to electrochemical plating of copper, including at least one cycle of sputter deposition of copper followed by sputter etching of the deposited copper, preferably performed in a same sputter chamber. The deposition is performed under conditions promoting high copper ionization fractions and strong wafer biasing to draw the copper ions into the via. The etching may be done with argon ions, preferably inductively excited by an RF coil around the chamber, or by copper ions, which may be formed with high target power and intense magnetron or by use of the RF coil. Two or more cycles of deposition/etch may be performed. A final flash deposition may be performed with high copper ionization and low wafer biasing.
    Type: Application
    Filed: August 14, 2007
    Publication date: August 14, 2008
    Applicant: Applied Materials, Inc.
    Inventors: XIANMIN TANG, Arvind Sundarrajan, Daniel Lubben, Qian Luo, Tza-Jing Gung, Anantha Subramani, Hua Chung, Xinyu Fu, Rongjun Wang, Yong Cao, Jick Yu, John Forster, Praburam Gopalraja
  • Patent number: 7407565
    Abstract: A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface.
    Type: Grant
    Filed: August 22, 2003
    Date of Patent: August 5, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Wei Wang, James Van Gogh
  • Publication number: 20080144162
    Abstract: The present invention concerns an electrochromic cell comprising a layer (4) of electrochromic material to which an electrolyte layer (3) is applied, means (7, 8, 9) being designed to establish a potential difference between these layers; said electrolyte comprises at least one compound of general formula: Na1+xZr2SixP3?xO12 ??(1) in which x is chosen to respond to the following conditions: 1, 6?x?2, 4. The present invention also concerns a glass pane or a rear-view mirror including such a cell.
    Type: Application
    Filed: May 30, 2007
    Publication date: June 19, 2008
    Applicant: Schefenacker Vision Systems France S.A.
    Inventors: Bernard Duroux, Allan Billard, David Howart
  • Publication number: 20080124565
    Abstract: A material for forming a conductive structure for a micromechanical current-driven device is described, which is an alloy containing about 0.025% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower and more stable than the sheet resistance of the pure metal. Accordingly, when used for conductive leads in a photonic device, the leads using the NiMn alloy may provide current to heat the photonic device while generating less heat within the leads themselves, and a more stable output.
    Type: Application
    Filed: November 29, 2006
    Publication date: May 29, 2008
    Applicant: Innovative Micro Technology
    Inventors: Gregory A. Carlson, Alok Paranjpye, Jeffery F. Summers, Douglas L. Thompson
  • Patent number: 7378002
    Abstract: An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.
    Type: Grant
    Filed: August 23, 2005
    Date of Patent: May 27, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Wei Ti Lee, Ted Guo, Sang-Ho Yu
  • Patent number: 7338581
    Abstract: A sputtering apparatus includes paired targets 31 disposed in a vacuum chamber 30, substrate holder 33 disposed at a position nearly perpendicular to the paired target 31 and apart from a space formed by the paired targets 31, a plasma source 37 for generating reaction plasma by after-glow plasma in the vicinity of the substrate holder 33, and a lead-in pipe 38 which connects the plasma source 37 to the vacuum chamber 30. Since reaction plasma of after-glow plasma can be produced in the vicinity of the substrate holder 33, it is possible to form a thin film of compound close to bulk characteristics at a low substrate temperature without the film being damaged by plasma.
    Type: Grant
    Filed: July 14, 2004
    Date of Patent: March 4, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Toshinari Noda
  • Patent number: 7325294
    Abstract: A method of making electromagnetic wave shielded read and write wires is provided. The method includes forming a bottom insulation layer on a bottom shield layer formed on a substrate. Then, forming electrically conductive wire material into openings in a first forming layer to form first and second read wires and first and second write wires. Forming a top insulation layer on the bottom insulation layer and on the wires. Then, forming a second forming layer on the top insulation layer with first, second, third, fourth and fifth openings down to the top insulation layer. Ion milling portions of the top insulation layer exposed by the openings in the second forming layer down to the bottom shield layer, then removing the second forming layer. Then, forming nonmagnetic electrically conductive middle shield layers in the openings in electrical contact with the bottom shield layer and forming a top shield layer on top of the middle shield layer.
    Type: Grant
    Filed: November 17, 2004
    Date of Patent: February 5, 2008
    Assignee: International Business Machines Corporation
    Inventor: Lin Zhou
  • Patent number: 7316867
    Abstract: A thin film for an anode of a lithium secondary battery having a current collector and an anode active material layer formed thereon is provided. The anode active material layer is a multi-layered thin film formed by stacking a silver (Ag) layer and a silicon-metal (Si-M) layer having silicon dispersed in a base made from metal reacting with silicon while not reacting with lithium. The cycle characteristic of the thin film for an anode can be improved by suppressing the volumetric expansion and shrinkage of Si occurring during charging/discharging cycles. Thus, a lithium secondary battery with improved life characteristics by employing the thin film for an anode, which greatly improves the chemical, mechanical stability of the interface between an electrode and an electrolyte.
    Type: Grant
    Filed: November 29, 2004
    Date of Patent: January 8, 2008
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Young-sin Park, Joo-yeal Oh, Hong-koo Baik, Sung-man Lee
  • Patent number: 7294241
    Abstract: A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200° C. Another embodiment has a pre-cooling step at a temperature less than 100° C. prior to Ta layer sputter deposition. In another non-limiting example embodiment, a pre-clean step comprising an inert gas sputter is performed prior to the tantalum sputter. Another non-limiting example embodiment provides a semiconductor structure comprising: a semiconductor structure; a copper layer over the semiconductor structure; a tantalum layer on the copper layer; the tantalum layer comprised alpha phase Ta; a metal layer on the tantalum layer.
    Type: Grant
    Filed: January 3, 2003
    Date of Patent: November 13, 2007
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Chim Seng Seet, Bei Chao Zhang, San Leong Liew, John Sudijono, Lai Lin Clare Yong
  • Patent number: 7291251
    Abstract: A method of making a coated article is provided, where the coated article may be used in a window or the like and may have at least one infrared (IR) reflecting layer in a low-E coating. The IR reflecting layer may be of silver or the like. In certain example embodiments, at least krypton (Kr) gas is used in sputter-depositing a silver inclusive IR reflecting layer. It has been found that the use of Kr gas in sputtering Ag targets results in an IR reflecting layer having improved resistance and emittance properties.
    Type: Grant
    Filed: January 18, 2005
    Date of Patent: November 6, 2007
    Assignee: Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.)
    Inventors: Jochen Butz, Uwe Kriltz, Sebastian Bobrowski
  • Patent number: 7244670
    Abstract: A method and an apparatus for fabricating an integrated circuit entail directing a vapor flux toward a substrate surface from a plurality of directions associated with a plurality of azimuth angles, and selecting a deposition angle of the vapor flux, relative to a normal incidence, to obtain a substantially conformal film. The surface feature can be associated with, for example, one or more vias and/or one or more trenches.
    Type: Grant
    Filed: June 18, 2004
    Date of Patent: July 17, 2007
    Assignee: Rensselaer Polytechnic Institute
    Inventors: Tansel Karabacak, Toh-Ming Lu, John Robert Barthel
  • Patent number: 7156960
    Abstract: A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.
    Type: Grant
    Filed: August 23, 2001
    Date of Patent: January 2, 2007
    Assignee: Cold Plasma Applications, CPA, SPRL
    Inventors: Pierre Vanden Brande, Alain Weymeersch
  • Patent number: 7150810
    Abstract: A sputtering target includes a backing plate, a copper target provided on the backing plate, and a protection layer formed of a corrosion-resistant metal on the surface of the copper target The protection layer depresses oxidation of the copper target and the adhesion of particles to a substrate due to the release of a deposited layer on the surface of the shielding plate.
    Type: Grant
    Filed: February 24, 2003
    Date of Patent: December 19, 2006
    Assignee: Fujitsu Limited
    Inventor: Takashi Hasegawa
  • Patent number: 7111382
    Abstract: Methods are provided for forming current perpendicular to the plane thin film read heads. In one embodiment, the method comprises the steps of forming a lower sensor lead, forming a lower sensor lead cladding of a low sputter yield material on the lower sensor lead, forming a sensor element on the lower sensor lead cladding, and forming an upper sensor lead coupled to the sensor element. The low sputter yield material helps to reduce redeposition of the lower sensor lead material onto side walls of the sensor element as the sensor element is being formed.
    Type: Grant
    Filed: June 18, 2002
    Date of Patent: September 26, 2006
    Assignee: Western Digital (Fremont), Inc.
    Inventors: Kenneth E. Knapp, Ronald A. Barr, Lien-Chang Wang, Benjamin P. Law, James Spallas
  • Patent number: 7041200
    Abstract: In a magnetron sputtering chamber, a substrate is placed in the chamber and a deposition shield is maintained about the substrate to shield internal surfaces in the chamber. The deposition shield has a textured surface that may be formed by a hot pressing process or by a coating process, and that allows the accumulated sputtered residues to stick thereto without flaking off. An electrical power is applied to a high density sputtering target facing the substrate to form a plasma in the chamber while a rotating magnetic field of at least about 300 Gauss is applied about the target to sputter the target. Advantageously, the sputtering process cycle can be repeated for at least about 8,000 substrates without cleaning the internal surfaces in the chamber, and even while still generating an average particle count on each processed substrate of less than 1 particle per 10 cm2 of substrate surface area.
    Type: Grant
    Filed: April 19, 2002
    Date of Patent: May 9, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Hien-Minh Huu Le, Keith A. Miller, Hoa T. Kieu, Kenny King-Tai Ngan
  • Patent number: 7037595
    Abstract: A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm/cm3. The layer is formed by depositing on a substrate without energy input to the substrate.
    Type: Grant
    Filed: November 15, 1999
    Date of Patent: May 2, 2006
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Bernard Andre, Jean Dijon, Brigitte Rafin
  • Patent number: 7018515
    Abstract: A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.
    Type: Grant
    Filed: September 23, 2004
    Date of Patent: March 28, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Tza-Jing Gung, Hong S. Yang, Anantha K. Subramani, Maurice E. Ewert, Keith A. Miller, Vincent E. Burkhart
  • Patent number: 7011733
    Abstract: In a sputtering apparatus, target particles to be deposited onto a substrate are selectively ionized relative to other particles in the deposition chamber. For example, titanium or titanium-containing target particles are selectively ionized, while inert particles, such as argon atoms, remain substantially unaffected. Advantageously, one or more optical ionizers, such as lasers, are used to create one or more ionization zones within the deposition chamber in which such selective ionization takes place.
    Type: Grant
    Filed: June 1, 2004
    Date of Patent: March 14, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Gurtej S. Sandhu
  • Patent number: 7005239
    Abstract: A method of forming a metal line includes the steps of forming a metal layer on a substrate in a chamber while maintaining a chamber pressure for a plasma to be equal to or smaller than 0.8 Pa, and coating a photoresist on the metal layer.
    Type: Grant
    Filed: December 16, 2002
    Date of Patent: February 28, 2006
    Assignee: LG.Philips LCD Co., Ltd.
    Inventor: Hu Kag Lee
  • Patent number: 6974984
    Abstract: Methods of depositing various metal layers adjacent to a ferroelectric polymer layer are disclosed. In one embodiment, a collimator may be used during a sputtering process to filter out charged particles from the material that may be deposited as a metal layer. In various embodiments, a metal layer may contain at least one of an intermetallic layer, an amorphous intermetallic layer, and an amorphized intermetallic layer.
    Type: Grant
    Filed: December 31, 2003
    Date of Patent: December 13, 2005
    Assignee: Intel Corporation
    Inventors: Hitesh Windlass, Ebrahim Andideh, Daniel C. Diana, Mark Richards, William C. Hicks
  • Patent number: 6971165
    Abstract: An improved method for manufacturing a matching pair of electrodes comprises the steps of: fabricating a first electrode with a substantially flat surface; depositing islands of an oxidizable material over regions of the surface; depositing a layer of a third material over the surface of the first electrode to form a second electrode; separating the first electrode from the second electrode; oxidizing the islands of oxidizable material, which causes the islands to expand; bringing the upper electrode and the lower electrode into close proximity, whereupon the expanded island of oxidizable material touches the upper surface and creates an insulating gap between the two surfaces, thereby forming a matching pairs of electrodes.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: December 6, 2005
    Assignee: Borealis Technical Limited
    Inventor: Avto Tavkhelidze
  • Patent number: 6969448
    Abstract: A method for fabricating a metallization structure is presented. The method preferably includes ion metal plasma depositing a wetting layer within a cavity defined in a dielectric layer. The wetting layer preferably includes titanium. The method preferably further includes sputter depositing a bulk metal layer within the cavity and upon the wetting layer. Sputter depositing of the bulk metal layer is preferably performed in a single deposition chamber at least until the cavity is substantially filled.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: November 29, 2005
    Assignee: Cypress Semiconductor Corp.
    Inventor: Gorley L. Lau
  • Patent number: 6969472
    Abstract: A method for manufacturing hemi-cylindrical and hemi-spherical micro structures is provided. A pattern is formed onto a substrate, and a layer of material is subsequently grown onto the substrate. Due to growth characteristics, the layer will form radially symmetric features when grown to an appropriate thickness.
    Type: Grant
    Filed: April 25, 2001
    Date of Patent: November 29, 2005
    Assignee: LSI Logic Corporation
    Inventors: Dmitri V. Vezenov, John M. Guerra, Leonard Wan, Paul F. Sullivan
  • Patent number: 6951814
    Abstract: Methods of forming a metal wiring layer on an integrated circuit include forming an insulating pattern including a recess region on an integrated circuit substrate. A metal layer is formed in the recess region and on a top surface of the insulting pattern. The metal layer is removed from the top surface of the insulating pattern adjacent the recess region and from an upper portion of the recess region. An aluminum film is formed on the metal layer at a process temperature less than a reflow temperature of the metal layer to substantially fill the upper portion of the recess region after removing the metal layer. A metal film is formed on the aluminum film at a process temperature less than the reflow temperature of the etched metal layer.
    Type: Grant
    Filed: August 27, 2003
    Date of Patent: October 4, 2005
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-hee Kim, Gil-heyun Choi, Ju-young Yun, Jung-hun Seo