Abstract: A plasma processing system and method provide an internal coil in a vacuum chamber for maintaining a high density plasma therein in a manner that may have a less restrictive requirement on metal flux shielding than when the shield protects a dielectric window. The shield also shields the coil from plasma heat load. The coil need not be actively cooled. Some metal is allowed to pass through the shield and deposit on the coil. This leads to a thinner shield with less complicated slots than for shields in external coil configurations. Good RF transparency of the shield is a result of the much simpler shield shape. The coil is not sputtered and is thus not consumable. The coil is enclosed in a small conductive space, reducing its inductance, resulting in reduced coil current and voltage, in turn simplifying the design and construction of the tuning network and RF connectors. Stiffeners support the coil and are profiled to avoid formation of conductive paths forming from metal deposits.

Abstract: A vacuum chamber has multiple wafer positions, and the wafers are positioned by a rotating pallet. Above a wafer position in the chamber there may be a sputtering target, a flat inductively coupled plasma (ICP) coil for etching the wafer and/or promoting sputtering, and a TEOS vapor outlet for forming an oxide film on the wafer. As the pallet rotates, a wafer may first have deposited a thin layer of oxide on walls of a via hole at the TEOS position. A metal layer may then be sputtered in the via hole at the sputtering position, and any pinch-off material may be etched away at an etching position. A magnet behind each target scans back and forth behind the target. Vertical magnet walls substantially surround a sputtering target for confining the sputtered material to an angle that is more normal to the wafer than prior art trajectories to fill narrower vias.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. Preferably, the coater includes at least one coating apparatus (e.g., which is adapted for delivering coating material) on each of two sides of the path of substrate travel.

Abstract: A method of fabricating a process chamber component having a textured surface with raised features. The method comprises providing a process chamber component having a surface, and forming a patterned resist layer on the process chamber component, the patterned resist layer having apertures that expose portions of the surface of the process chamber component therethrough. A textured surface having raised features is formed on the process chamber component by propelling grit particles with a gas that is pressurized to a pressure sufficiently high to cause the grit particles to erode and remove material from the surface.

Abstract: A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi1.02-2.00. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film. A method of manufacturing the above referenced hafnium silicide target is also provided.

Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

Abstract: Metal seed layers are deposited on a semiconductor substrate having recessed features by a method that involves depositing a first portion of seed layer material, subsequently selectively resputtering the deposited seed layer material in the presence of exposed diffusion barrier material, and, depositing a second portion of the seed layer material. Resputtering operation improves seed layer coverage on the recessed feature sidewalls by redistributing seed layer material within the feature. Resputtering, however, sometimes exposes an underlying diffusion barrier material at the feature bottom and at the top corners of the feature. In order to prevent inadvertent removal of diffusion barrier layer, resputtering is performed under conditions that allow etching of the seed layer material at a rate which is at least five times greater than the etching rate of a diffusion barrier material. Selective resputtering is performed by impinging on the wafer substrate with low-energy argon and/or copper ions.

Abstract: In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.

Abstract: The present invention generally provides an apparatus and method for processing a surface of a substrate in a PVD chamber that has a magnetron assembly whose shape can be distorted to adjust the magnetic field strength in the processing region of the deposition chamber to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more magnetron regions and magnetron actuators that are used to increase and more evenly distribute the magnetic field strength throughout the processing region of the processing chamber during processing.

Abstract: The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed.

Abstract: Apparatus for treating products with plasma generated from a source gas. The apparatus includes a vacuum chamber, a plurality of juxtaposed electrodes arranged in adjacent pairs inside the vacuum chamber, and a plasma excitation source electrically coupled with the electrodes. The apparatus may include conductive members extending into the interior of each electrode to establish a respective electrical connection with the plasma excitation source. The apparatus may include a gas distribution manifold and multiple gas delivery tubes coupled with the gas distribution manifold. Each gas delivery tube has an injection port configured to inject the source gas between each adjacent pair of electrodes. The apparatus may further include flow restricting members that operate to partially obstruct a peripheral gap between each adjacent pair of electrodes, which restricts the escape of the source gas from the process chamber between each adjacent pair of electrodes.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: An electron bombardment heating apparatus, in which thermions emitted from filaments are accelerated and impinge upon a heating plate, so as to heat the heating plate, wherein a peripheral wall of a heated material supporting member having a heating plate as a ceiling thereof is made of multi-staged peripheral wall portions, positioned vertically and having a different radius, and those peripheral wall portions are connected with each other by means of a ring-like horizontal wall. With this, thermal stress can be mitigated, which is caused due to a difference in temperature between the lower end portion of the heated material supporting member and the heating plate when heating up the heating plate, thereby causing no breakage in the heated material supporting member when conducting heating and cooling upon the heating plate, repetitively.

Abstract: There are provided a method and an apparatus for forming a fluoride thin film having a desired refractive index and no absorption throughout a range including the ultraviolet region and the visible region, using a sputtering method. The method of forming a fluoride thin film according to the present invention is a method of forming a metal fluoride thin film on a substrate by performing reactive sputtering with a gas comprising fluorine by use of a metal target, which comprises irradiating a gas comprising fluorine with electrons having an energy less than the ionization energy of the gas comprising fluorine to activate the gas and introducing the activated gas into a reaction apace, thereby performing sputtering.

Abstract: An improved wafer holder design is described which has manufacturing and performance advantages over present state-of-the-art holders used in various wafer processing applications. The new wafer holder design incorporates a series of short radial grooves. The grooves extend from the base of a circular channel, which runs along the outside diameter of the substrate wafer recess, to a fixed radial location which varies based on wafer size and thickness. The grooves provide a slight overlap with the wafer to facilitate the free exchange of gases beneath the wafer necessary for wafer loading and unloading operations. The short length of the radial grooves make the wafer holder easier to manufacture and offer more robust performance compared to the present state-of-the-art holders.

Abstract: A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers. The first coating layer is formed over the underlying structure, and has a first surface with an average surface roughness of less than about 25 micrometers. The second coating layer is formed over the first coating layer, and has a second surface with an average surface roughness of at least about 50 micrometers. Process residues can adhere to the surface of the second coating layer to reduce the contamination of processed substrates.

Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion of the electrode plate.

Abstract: This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source. A deposition process step is performed in which metal vapor is produced from a target of a PVD source. Location and sputter efficiency at the target surface is enhanced by moving a magnet pack to create a traveling or sweeping magnetic field envelope. The target is energized from a DC power supply and pressures effective for an efficient thermalization of the sputtered atoms (30<p<100 mTorr) are maintained in the chamber during deposition. A uniform thickness of the metal on the wafer is produced within each magnet sweeping cycle.

Abstract: A module for supporting a substrate includes a frame, a substrate holding unit and a guide mask. The frame receives the substrate including a deposition surface, a rear surface corresponding to the deposition surface, and a side surface connecting the deposition surface with the rear surface. The rear surface is supported by the frame. The substrate holding unit faces the side surface and is combined with a side of the frame. The guide mask includes a guide member and a deposition prevention member. The guide member is combined with the substrate holding unit to cover a portion of the deposition surface. The guide member guides the substrate. The deposition prevention member is combined with the substrate holding unit. The deposition prevention member has greater length than the guiding member to cover the guiding member.

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract: A sputtering apparatus according to the present invention includes a substrate holding means for holding substrates and gas introducing routes having a plurality of gas jetting ports arranged at a plurality of places surrounding the substrates, and characterized in that at least one of the gas introducing routes is provided with a gas introduction connecting port, and the number of gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than the number of gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports, or an aperture of each of the gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than an aperture of each of the gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports.

Abstract: A generally rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron includes a closed plasma loop formed in a convolute shape, for example, serpentine or rectangularized helix with an inner pole of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole having the opposed polarity.

Abstract: An inductively coupled plasma processing apparatus according to the present invention prevents debris formed through a sputter etching operation from forming a film on an inner face of a side wall part 14 of a dielectric wall container 11 and a high-frequency power from being hindered to be supplied. All of straight lines which start from any one point on the outermost perimeter of an article to be processed 2 and pass through a plasma introduction port 12 form an intersecting point with the bottom part 13 of the dielectric wall container 11 on the inner face of the bottom part 13, in the inductively coupled plasma processing apparatus.

Abstract: In a first aspect, a method is provided for use during plasma processing. The first method includes the steps of (1) placing a substrate on a substrate holder of a plasma chamber; (2) positioning a cover frame adjacent and below a perimeter of the substrate; and (3) employing the cover frame to reduce arcing during plasma processing within the plasma chamber. Numerous other aspects are provided.

Abstract: A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.

Abstract: A gas-timing control method for depositing metal oxynitride and transition metal oxynitride (Mx(ON)y) films on glass and flexible substrates using reactive radio frequency magnetron sputtering, without substrate heating. A system includes a sputtering chamber, substrates, targets, three mass flow controllers controlled respective flow rates of argon, nitrogen and oxygen gases alternately and intermittently into the sputtering chamber, and a radio frequency generator with 13.56 MHz which irradiated in the sputtering chamber to decompose sputtering gases. The flow rate ratio of oxygen+nitrogen/argon is at least 0.02, the flow rate ratio of oxygen/nitrogen is at least 0.01, and the sequence timing of argon, nitrogen and oxygen gases alternately or mixed into the sputtering chamber at least 1 sec.

Abstract: An apparatus and method to deposit a MgO film on a large substrate area. The method includes applying a voltage to one or more magnesium targets; applying an electric current to the one or more magnesium targets when the voltage stops increasing so that a power with a negative square wave, which does not cause mutual interfere, is applied to the one or more magnesium targets; and forming a MgO film on a substrate using magnesium particles emitted from the one or more magnesium targets by the power applied.

Abstract: A method of processing a semiconductor which includes providing a process gas supply unit for supplying a process gas to a sample stand to hold a sample in a process chamber and to the process chamber, successively supplying a plurality of samples of a lot to the process chamber to conduct an intra-lot successive process, predicting, before a lot process is started and according to sensor data detected by a state sensor to detect a state in the process chamber, intra-lot variation patterns of results of the intra-lot successive process, and changing, according to a result of the prediction by the intra-lot variation pattern prediction unit, a process condition applied to a sample of the lot and conducting the lot process.

Abstract: A plasma processing apparatus includes a platen that supports a substrate for plasma processing. A RF power supply generates a multi-level RF power waveform at an output having at least a first period with a first power level and a second period with a second power level. A RF plasma source having an electrical input that is electrically connected to the output of the RF power supply generates at least a first RF plasma with the first RF power level during the first period and a second RF plasma with the second RF power level during the second period. A bias voltage power supply having an output that is electrically connected to the platen generates a bias voltage waveform that is sufficient to attract ions in the plasma to the substrate for plasma processing.

Abstract: A substrate processing apparatus includes a substrate processing part which processes a substrate and a particle remover which generates an electric field. The particle remover generates the electric field adjacent to a sidewall of a chamber of the substrate processing apparatus, and the electric field guides particles formed during which the substrate is processed, to prevent the particles from being attached onto the sidewall of the chamber. Thus, the substrate processing apparatus prevents defects of the substrate due to the particles, thereby improving product yield and productivity and reducing a manufacturing cost thereof.

Abstract: A gas supply system 200 is a system that supplies a predetermined gas from a gas supply source 210 to a processing part 110 of a semiconductor manufacturing apparatus 100. The gas supply system 200 includes a gas supply passage apparatus 220 that is connected to the gas supply source 210 and the processing part 110. The gas supply passage apparatus 220 is provided with a plurality of fluid controllers (a hand valve 231, a pressure reducing valve 232, a manometer 233, a check valve 234, a first shutoff valve 235, a second shutoff valve 236, a massflow controller 237, and a gas filter 238), and passage structuring members (passage blocks 241 to 249) that are connected to positions between the respective fluid controllers 231 to 238 and form gas passages 221 to 229. The passage structuring members are made of a carbon material. Thus, when a corrosive gas is supplied to the processing part 110, mixture of a metal contaminant into a substrate to be processed W can be prevented as much as possible.

Abstract: A dynamic film thickness control system/method and its utilization consisting of a minimum of one mask plate arranged between a substrate and a vapor source. A film thickness control device is utilized for real-time control over deposited film thickness and gradually moves the mask plate according to the film thickness control value acquired by the film thickness control device, enabling the mask plate to mask film zones on the said substrate to achieve the film thickness of a design objective. When the required zones of deposition are masked, the deposition of a particular film layer is completed.

Abstract: According to an aspect of an embodiment, a stacked-film-forming system for forming a stacked film has a first film-forming apparatus including a holder having a frame surrounding the substrate and a holding mechanism for holding the substrate inside the frame so that the major surface of the substrate is vertically oriented, a material emission portion for emitting a material of a first film toward the substrate held in the holder, and a shield being disposed between the holder and the material emission portion and shielding areas except for a portion of the frame from the emitted material. The portion is located at the upper part of the substrate. The stacked-film-forming system has a second film-forming apparatus for forming a second film, on the first film. The second film is made of a material different from the material of the first film.

Abstract: An apparatus for performing a semiconductor process on a target substrate (W) includes a lifting mechanism (48) disposed in a worktable (38) to assist transfer of the target substrate. The lifting mechanism includes a lifter pin (51) configured to support and move up and down the target substrate, and a guide hole (49) configured to guide the lifter pin being moved up and down. The guide hole includes a main hole portion (49a) which extends through the worktable from its upper surface to lower surface, and an extended hole portion (49b) which extends into an extension sleeve (66) which projects downward from the lower surface of the worktable to correspond to the main hole portion.

Abstract: A system for processing a workpiece includes a dry process chamber, such as a plasma etching chamber, and a wet process chamber, such as a spin/spray chamber. Gas supply lines supply gases to the dry process chamber, and to a chemical solution generator. A liquid supply line supplies a liquid, such as de-ionized water, to the chemical solution generator. The chemical solution generator manufactures liquid chemical solutions in situ, for point of use in the wet process chamber. The system allows for both wet and dry processing with few or no separate liquid chemical supply lines.

Abstract: Various exemplary embodiments of the present invention relate to a method for controlling magnetic leakage flux in a sputtering target containing magnetic and non-magnetic elements. The method relates to selecting a particle size of at least one non-magnetic phase in a microstructure, where the particle size of the non-magnetic phase is greater than or equal to one micron. The non-magnetic phase is combined with at least one magnetic phase in the microstructure, where the magnetic phase is greater than or equal to 10 atomic percent and is greater than one micron in size. The selected particle size of the non-magnetic phase decreases the diffusion between the magnetic and non-magnetic phases in the microstructure, and may increase the pass through flux (PTF) of the sputtering target. The magnetic phase and non-magnetic phases may be combined in the microstructure by hot isostatic pressing, sintering, spark plasma sintering, or vacuum hot pressing.

Abstract: A sputtering apparatus includes a target electrode and a bias source electrically coupled to the target electrode. A wafer chuck is spaced from the target electrode. The wafer chuck is partitioned into a plurality of zones, each zone being coupled to receive an AC signal having an amplitude that can vary by zone. At least one RF coil is positioned adjacent a space between the target electrode and the wafer chuck.

Abstract: A plasma processing apparatus characterized by comprising within a sealable chamber: an internal structural body that is disposed to be spaced apart from an inner wall surface of the chamber and that forms an inside space for housing a substrate serving as an object of processing; a substrate holding section that houses the substrate within the inside space; reactive gas supplying means for supplying a reactive gas to the inside space; a cathode and an anode that are supported by the internal structural body and disposed on both sides of the substrate within the inside space and that generate plasma discharge of the reactive gas; a heater that is supported by the internal structural body and that heats the substrate within the inside space; and heat-dissipating means capable of dissipating a Joule heat generated by the plasma discharge to outside of the inside space.

Abstract: A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap or berline wall between the insert ring and the wafer support. In one embodiment, the convex inner surface is convexly-tapered. In another embodiment, the convex inner surface is convexly-curved. Throughout etching of multiple successive substrates on the wafer support, accumulations of polymer material on the inner surface of the insert ring are prevented or at least substantially reduced. Consequently, polymer peeling is eliminated or reduced and operational intervals for the processing chamber or system between periodic maintenance or cleanings, are prolonged.

Abstract: For driving at least two HF power generators that supply a plasma process with HF power, at least one drive signal is generated and at least one pulse signal is generated. Then, based on the at least one drive signal and the at least one pulse signal, a pulsed HF power signal is generated by each of the at least two HF power generator.

Abstract: A ceramic window in an iPVD module is provided with features that reduce heating of the window as a result of metal film deposits on the window. Dielectric dissipation and resistive heating of the metal film are reduced by the features. Reducing of the window heating is provided by either shaping the window surface on the chamber side of the window or providing structurally floating features to block at least a portion of a conductive path from forming on the chamber side window surface. The shaping can produce contours that prevent current paths from being created in the forming metal film. In addition or in the alternative, texture on the chamber side surface of the window is provided to increase surface area and thereby reduce film thickness.

Abstract: A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.

Abstract: A film deposition device for depositing a film includes a depositing chamber for depositing the film with plasma. A plasma quantity monitoring device is disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time. A calculating device is electrically connected to the plasma quantity monitoring device for calculating a thickness of the film from the plasma quantity so that the thickness is monitored at real time.

Abstract: A method for configuring a plasma cluster tool is disclosed. The method includes generating a key file from option specifications, the key file encapsulating configuration restrictions specifically imposed on the plasma cluster tool. The method also includes generating at least one system-wide configuration file and at least one component-level configuration file using the key file. The method additionally includes generating run-time executable objects from a database of option definition files, the at least one system-wide configuration file and the at least one component-level configuration file. Furthermore, the method includes employing the run-time executable objects to configure the plasma cluster tool.

Abstract: The apparatus and method involve using a gas manifold for introducing gas into a deposition chamber. Certain embodiments involve using a binary manifold for uniform distribution of the gas with good response time. During sputtering operations, provision of an anode using the gas manifold enables such anode to be entirely protected from sputtered dielectric material during the deposition process. As such, conduction paths are initially established and maintained between electrons within the chamber and the anode. This results in improved maintenance of stable plasma and consistent coating in the deposition chamber. The conduction paths are enhanced in comparison to conventional systems due to increased collisions between the electrons and gas flowing out of the manifold outlets. Also, ionization of the gas flowing from the manifold outlets is enhanced, resulting in enhanced deposition output from the system.

Abstract: There is not known a conventional method for predicting the consumed degree of consumable supplies and the thickness of deposited films without opening a processing chamber. A method for predicting the consumed degree of a consumable supply and the thickness of a deposited film according to the present invention is used for a plasma processing system 10 for carrying out a predetermined processing for a wafer W with plasma which is produced from a process gas by applying a high-frequency power, and comprises the steps of: measuring the voltages and currents of a fundamental wave and its integer-times waves of a high-frequency power supply 20, which vary in accordance with the thickness of a focus ring 21 and the thickness of a deposited film, with elapsed time; and using these measured data to carry out a multiple regression analysis to predict the thickness of the focus ring 21 and the thickness of the deposited film.

Abstract: An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.

Abstract: A method for performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit.

Abstract: A sputtering chamber includes at least two sputtering targets, one of the at least two targets disposed on a first side a substrate conveyor extending within the chamber, and another of the at least two targets disposed on a second side of the conveyor. The at least two targets may be independently operable, and at least one of the targets, if inactivated, may be protected by a shielding apparatus. Both of the at least two targets may be mounted to a first wall of a plurality of walls enclosing the sputtering chamber.

Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode.