Target Composition Patents (Class 204/298.13)
  • Patent number: 11125708
    Abstract: The present invention relates to a sputtering target, comprising a silver alloy comprising a first element, selected from indium, tin, antimony and bismuth, in an amount of 0.01 to 2 wt. %, based on the total weight of the silver alloy, and 0.01 to 2 wt. % titanium, based on the total weight of the silver alloy, and having an average grain size of no more than 55 ?m.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: September 21, 2021
    Assignee: Materion Advanced Materials Germany GmbH
    Inventors: Martin Schlott, Christoph Simons, Albert Kastner, Jens Wagner, Uwe Konietzka
  • Patent number: 11069780
    Abstract: A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: July 20, 2021
    Assignee: Ricoh Company, Ltd.
    Inventors: Ryoichi Saotome, Naoyuki Ueda, Yuichi Ando, Yuki Nakamura, Yukiko Abe, Shinji Matsumoto, Yuji Sone, Sadanori Arae, Minehide Kusayanagi
  • Patent number: 11046616
    Abstract: A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 ?m or more per 80000 mm2 on the sputtering surface.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: June 29, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Kunihiro Oda, Takayuki Asano
  • Patent number: 10971695
    Abstract: A multilayer reflection electrode film includes a Ag film that is formed of Ag or an Ag alloy; and a transparent conductive oxide film that is disposed on the Ag film, in which the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two or more elements selected from the group consisting of Sn, Y, and Ti.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: April 6, 2021
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Hiromi Nakazawa, Hiroshi Ishii, Yuto Toshimori, Atsushi Saito, Yujiro Hayashi
  • Patent number: 10971181
    Abstract: A sputtering target for magnetic recording media capable of producing a magnetic thin film in which the magnetic crystal grains are micronized and the distance between the centers of the grains is reduced while good magnetic properties are maintained. The target including metallic Pt and an oxide, with the balance being metallic Co and inevitable impurities, wherein the Co is contained in a range of 70 at % to 90 at % and the Pt is contained in a range of 10 at % to 30 at % relative to a total of metallic components in the sputtering target for magnetic recording media, the oxide is contained in a range of 26 vol % to 40 vol % relative to a total volume of the sputtering target for magnetic recording media, and the oxide is composed of B2O3 and one or more high-melting-point oxides having a melting point of 1470° C. or higher and 2800° C. or lower.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: April 6, 2021
    Assignees: TANAKA KIKINZOKU KOGYO K.K., TOHOKU UNIVERSITY
    Inventors: Kim Kong Tham, Ryousuke Kushibiki, Toshiya Yamamoto, Shin Saito, Shintaro Hinata
  • Patent number: 10889887
    Abstract: In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.
    Type: Grant
    Filed: August 7, 2017
    Date of Patent: January 12, 2021
    Assignee: Honeywell International Inc.
    Inventor: Michael R. Pinter
  • Patent number: 10889504
    Abstract: An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: January 12, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wenlin Zhang, Ce Ning, Hehe Hu, Zhengliang Li
  • Patent number: 10861684
    Abstract: A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: December 8, 2020
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Toshiaki Kuroda, Mikio Takigawa
  • Patent number: 10854435
    Abstract: Sb—Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at %, a Te content of 20 to 60 at %, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 ?m or less. An object of this invention is to improve the texture of the Sb—Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: December 1, 2020
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventor: Yoshimasa Koido
  • Patent number: 10837101
    Abstract: Provided is an oxide grain-dispersed ferromagnetic material sputtering target having a fine structure which can effectively reduce abnormal discharge and generation of particles caused by oxide grains. A sintered sputtering target contains, as metal or an alloy, 0 mol % or more and 45 mol % or less of Pt, 55 mol % or more and 95 mol % or less of Co, and 0 mol % or more and 40 mol % or less of Cr; and further contains at least two kinds of oxides. The oxides are present in the metal or alloy, and the standard deviation of the number density of oxides is 2.5 or less.
    Type: Grant
    Filed: March 23, 2017
    Date of Patent: November 17, 2020
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventor: Yuki Furuya
  • Patent number: 10833201
    Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
    Type: Grant
    Filed: March 21, 2016
    Date of Patent: November 10, 2020
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue
  • Patent number: 10822691
    Abstract: A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 ?m or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 ?m or more is 1% to 30%.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: November 3, 2020
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuki Yoshida, Toshiaki Ueda, Satoru Mori
  • Patent number: 10811237
    Abstract: Provided is a Mn—Zn—O sputtering target which can be used in DC sputtering, and a production method for the target. The Mn—Zn—O sputtering target comprises a chemical composition containing Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo. The target has a relative density of 90% or more and a specific resistance of 1×10?3 ?·cm or less.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: October 20, 2020
    Assignee: Dexerials Corporation
    Inventors: Junichi Sugawara, Yuichi Kamori
  • Patent number: 10685692
    Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer including a CoFeBAl alloy and having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the CoFeBAl alloy may have an Al content less than 10 at %.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: June 16, 2020
    Assignee: SK hynix Inc.
    Inventors: Jong-Koo Lim, Yang-Kon Kim, Ku-Youl Jung, Guk-Cheon Kim, Jeong-Myeong Kim
  • Patent number: 10679833
    Abstract: A cylindrical sputtering target includes a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material. Where the joining material has a thickness of d (?m), the joining material has a coefficient of thermal expansion of ?1 (?m/?mK), and a melting point of the joining material and room temperature have a difference of ?T (K), a surface of the cylindrical sputtering target member on the side of the joining material has a value of ten-point average roughness (Rz) fulfilling: d (?m)×?1 (?m/?mK)×?T (K)?Rz (?m).
    Type: Grant
    Filed: March 19, 2016
    Date of Patent: June 9, 2020
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventor: Yoshitaka Tsuruta
  • Patent number: 10669208
    Abstract: An oxide sintered body is provided which does not splash from the target surface even at the time of high power film formation, has a high film formation rate, and is used in a sputtering target capable of providing a high-refractive-index film. An oxide sintered body is used which contains zinc, niobium, aluminum and oxygen as constituent elements and in which Nb/(Zn+Nb+Al)=0.076 to 0.289 and Al/(Zn+Nb+Al)=0.006 to 0.031, where Zn, Nb and Al denote contents of zinc, niobium and aluminum, respectively.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: June 2, 2020
    Assignee: TOSOH CORPORATION
    Inventors: Kenichi Itoh, Hiroyuki Hara, Shinichi Hara
  • Patent number: 10600440
    Abstract: An FePt-based sintered sputtering target containing C and/or BN, wherein an area ratio of AgCu alloy grains on a polished surface of a cross section that is perpendicular to a sputtered surface of the sputtering target is 0.5% or more and 15% or less. An object of this invention is to provide a sputtering target capable of reducing particles generation during sputtering and efficiently depositing a magnetic thin film of a magnetic recording medium.
    Type: Grant
    Filed: July 7, 2015
    Date of Patent: March 24, 2020
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventor: Shin-ichi Ogino
  • Patent number: 10550000
    Abstract: A secondary battery includes: a cathode; an anode including a carbon material; and non-aqueous electrolytic solution. A photoelectron spectrum of oxygen 1s is obtained from an analysis of the anode by X-ray photoelectron spectroscopy. A first peak positioned in vicinity of 1360 reciprocal centimeters and a second peak positioned in vicinity of 1580 reciprocal centimeters are obtained from an analysis of the carbon material by Raman spectroscopy. A half band width ?W1 of the photoelectron spectrum is about 3 electron volts or more. A half band width ?W2 of the second peak is about 19 reciprocal centimeters or more. A ratio I1/I2 of intensity I1 of the first peak to intensity I2 of the second peak is from about 0.15 to about 0.3 both inclusive.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: February 4, 2020
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Toshio Nishi, Masayuki Ihara, Hideki Nakai, Akinori Kita
  • Patent number: 10490393
    Abstract: A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less. By controlling the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: November 26, 2019
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shinichiro Senda, Kotaro Nagatsu
  • Patent number: 10354846
    Abstract: The present invention is a sputtering target-backing plate assembly in which the sputtering target is made from Ta having a 02% proof stress of 150 to 200 MPa, and the backing plate is made from a Cu alloy having a 0.2% proof stress of 60 to 200 MPa. The present invention aims to increase the uniformity of the film thickness as well as increase the deposition rate and improve the productivity by reducing, as much as possible, the plastic deformation of the sputtering target caused by the repeated thermal expansion and contraction of the sputtering target-backing plate assembly as a bimetal.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: July 16, 2019
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Kotaro Nagatsu, Shinichiro Senda
  • Patent number: 10287175
    Abstract: Disclosed are methods for purification of a crude TiI4 for deposition of Ti-containing films including evaporating volatile impurities in the crude TiI4 under vacuum at room temperature in a sublimator and removing the volatile impurities, placing the sublimator in a hot oil bath under vacuum at a temperature to evaporate TiI4 and form powders or a solid, and sublimating the powers or the solid under vacuum at the temperature to obtain the purified TiI4. Disclosed are methods for storage of a pure TiI4 including drying a stainless-steel canister, instantaneously moving the dried stainless steel canister into a glove box under inert atmosphere at room temperature, moving the pure TiI4 into the glove box, filling the pure TiI4 into the dried stainless-steel canister, and sealing the dried stainless steel canister containing the pure TiI4 with metallic sealing.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: May 14, 2019
    Assignee: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Satoko Gatineau, Grigory Nikiforov
  • Patent number: 10283332
    Abstract: A Cu—Ga binary alloy sputtering target having excellent mechanical workability, high density, and high bending strength, and a method of producing the sputtering target are provided. The sputtering target has a composition including 28 to 35 atomic % of Ga and the balance made of Cu and inevitable impurities. In addition, the sputtering target has a coexistence microstructure in which a low-Ga-containing Cu—Ga binary alloy phase is surrounded by a high-Ga-containing Cu—Ga binary alloy phase. The low-Ga-containing Cu—Ga binary alloy phase includes 26 atomic % or less of Ga and a balance made of Cu. The high-Ga-containing Cu—Ga binary alloy phase includes 28 atomic % or more of Ga.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: May 7, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Keita Umemoto, Shoubin Zhang
  • Patent number: 10266924
    Abstract: Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).
    Type: Grant
    Filed: April 23, 2010
    Date of Patent: April 23, 2019
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Atsushi Fukushima, Kunihiro Oda
  • Patent number: 10202681
    Abstract: A Ga-containing and Cu-containing sputtering target has a Ga content of from 30 to 68 at %. The sputtering target contains only CuGa2 as Ga-containing and Cu-containing intermetallic phase or the proportion by volume of CuGa2 is greater than the proportion by volume of Cu9Ga4. The sputtering target is advantageously produced by spark plasma sintering or cold gas spraying. Compared to Cu9Ga4, CuGa2 is very soft, which aids the production of defect-free sputtering targets having homogeneous sputtering behavior.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: February 12, 2019
    Assignee: Plansee SE
    Inventors: Christian Linke, Thomas Scherer
  • Patent number: 10196536
    Abstract: A thermal spray slurry of the present invention contains ceramic particles in a content of 10% by mass or more and 85% by mass or less, and has a viscosity of 3,000 mPa·s or less. The ceramic particles have an average particle size of, for example, 1 nm or more and 5 ?m or less. The thermal spray slurry may further contain a dispersant. The thermal spray slurry may further contain a viscosity modifier. The thermal spray slurry may further contain a flocculant.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: February 5, 2019
    Assignee: FUJIMI INCORPORATED
    Inventors: Junya Kitamura, Hiroaki Mizuno, Kazuto Sato, Kazuyuki Tsuzuki
  • Patent number: 10186404
    Abstract: An FePt—C-based sputtering target containing Fe, Pt, and C, wherein the FePt—C-based sputtering target has a structure in which primary particles of C that contain unavoidable impurities are dispersed in an FePt-based alloy phase containing 33 at % or more and 60 at % or less of Pt with the balance being Fe and unavoidable impurities, the primary particles of C being dispersed so as not to be in contact with each other.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: January 22, 2019
    Assignee: TANAKA KIKINZOKU KOGYO K.K.
    Inventors: Yasuyuki Goto, Takamichi Yamamoto, Masahiro Nishiura, Ryousuke Kushibiki
  • Patent number: 10138541
    Abstract: A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688×Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3×10?4 ?cm.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: November 27, 2018
    Assignee: Kaneka Corporation
    Inventors: Hironori Hayakawa, Takashi Kuchiyama, Hiroaki Ueda
  • Patent number: 10037830
    Abstract: An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 m?·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: July 31, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Hideo Takami, Masakatsu Ikisawa
  • Patent number: 10030302
    Abstract: Provided is a sintered body comprising LiCoO2 used for a sputtering target. The area A of a surface of the sintered body that corresponds to a sputtering surface is 200-1500 cm2 and the relative density of the entire sintered body is 75% or higher. When B1 represents the area of a region in which the area ratio that is occupied by pores is 10% or higher in the surface that corresponds to a sputtering surface, the ratio of B1 to the area A is 50% or higher, and the area B2 of a region having a specific resistance of 1.0×102 ?-cm or smaller in the surface that corresponds to a sputtering surface occupies 25% or more of the area A.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: July 24, 2018
    Assignee: KOBELCO RESEARCH INSTITUTE, INC.
    Inventors: Yuichi Taketomi, Moriyoshi Kanamaru
  • Patent number: 10008220
    Abstract: A magnetic recording medium includes a substrate; a lower base layer formed on the substrate; and a (001) oriented L10 magnetic layer formed on the lower base layer and including a first magnetic layer formed on the lower base layer and having a granular structure of magnetic grains and a grain boundary portion, the grain boundary portion containing C, and a second magnetic layer formed on the first magnetic layer and having a granular structure of magnetic grains and a grain boundary portion, the grain boundary portion containing oxide or nitride, the second magnetic layer further containing one or more elements selected from a group consisting of Mg, Ni, Zn, Ge, Pd, Sn, Ag, Re, Au and Pb as an additive.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: June 26, 2018
    Assignee: SHOWA DENKO K.K.
    Inventors: Takayuki Fukushima, Yuji Murakami, Tetsuya Kanbe, Lei Zhang, Kazuya Niwa, Hisato Shibata
  • Patent number: 9960190
    Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: May 1, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka, Kenichi Okazaki, Yukinori Shima, Shinpei Matsuda, Haruyuki Baba, Ryunosuke Honda
  • Patent number: 9960023
    Abstract: Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: May 1, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Junqi Wei, Zhitao Cao, Yueh Sheng Ow, Ananthkrishna Jupudi, Kirankumar Savandaiah, Xin Wang, Sriskantharajah Thirunavukarasu
  • Patent number: 9941415
    Abstract: Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550° C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.0×1018 cm?3, and a carrier mobility of 10 cm2V?1 sec?1 or higher.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: April 10, 2018
    Assignee: SUMITOMO METAL MINING CO., LTD.
    Inventors: Tokuyuki Nakayama, Eiichiro Nishimura, Fumihiko Matsumura, Masashi Iwara
  • Patent number: 9926236
    Abstract: The present invention provides: an oxide sintered body having superior manufacturing stability, film stability, discharge stability, and mechanical strength; a process for manufacturing the same; and an oxide film obtained by using the oxide sintered body and having an intermediate refractive index. The oxide sintered body comprising In and Si, wherein a Si content is 0.65 to 1.75 in Si/In atomic ratio, a relative density is 90% or more, and a bending strength is 90 N/mm2 or more, is manufactured, and the oxide film with refractive index of 1.70 to 1.90 by a sputtering process using the oxide sintered body is manufactured.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: March 27, 2018
    Assignee: SUMITOMO METAL MINING CO., LTD.
    Inventors: Kentaro Sogabe, Isao Ando, Makoto Ozawa
  • Patent number: 9922808
    Abstract: A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 ?m width (e.g., less than about 50 ?m width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: March 20, 2018
    Assignee: H.C. STARCK INC.
    Inventors: Gary Alan Rozak, Mark E. Gaydos
  • Patent number: 9845528
    Abstract: Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity).
    Type: Grant
    Filed: August 4, 2010
    Date of Patent: December 19, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Atsushi Fukushima, Kunihiro Oda, Shinichiro Senda
  • Patent number: 9824868
    Abstract: A sputtering target which is made of a magnesium oxide sintered body having a purity of not less than 99.99% or not less than 99.995% by mass %, a relative density of not less than 98%, and an average grain size of not more than 8 ?m. The average grain size of the sputtering target is preferably not more than 5 ?m, more preferably not more than 2 ?m. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target.
    Type: Grant
    Filed: October 25, 2012
    Date of Patent: November 21, 2017
    Assignee: Ferrotec Ceramics Corporation
    Inventors: Ken Okamoto, Tadahisa Arahori, Akishige Sato, Sachio Miyashita, Eiji Kusano, Muneaki Sakamoto
  • Patent number: 9803275
    Abstract: The present invention provides a method for manufacturing a graphene composite electrode material, including the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1100° C.; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: October 31, 2017
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventor: Yewen Wang
  • Patent number: 9793099
    Abstract: Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object of the present invention is to provide a magnetic material target, in particular a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: October 17, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shin-ichi Ogino, Yuichiro Nakamura
  • Patent number: 9773653
    Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.
    Type: Grant
    Filed: January 28, 2013
    Date of Patent: September 26, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Hideo Takami, Atsutoshi Arakawa
  • Patent number: 9660127
    Abstract: Provided are a sputtering target that is capable of forming a Cu—Ga film, which has an added Ga concentration of 1 to 40 at % and into which Na is well added, by a sputtering method and a method for producing the sputtering target. The sputtering target has a component composition that contains 1 to 40 at % of Ga, 0.05 to 2 at % of Na as metal element components other than F, S and Se, and the balance composed of Cu and unavoidable impurities. The sputtering target contains Na in at least one form selected from among sodium fluoride, sodium sulfide, and sodium selenide, and has a content of oxygen of from 100 to 1,000 ppm.
    Type: Grant
    Filed: April 24, 2012
    Date of Patent: May 23, 2017
    Assignees: MITSUBISHI MATERIALS CORPORATION, SOLAR FRONTIER K.K.
    Inventors: Shoubin Zhang, Masahiro Shoji
  • Patent number: 9624562
    Abstract: Provided is an Al alloy film for display devices, which has excellent heat resistance under high temperatures, low electric resistance (wiring resistance), and excellent corrosion resistance under alkaline environments. The present invention relates to an Al alloy film containing Ge (0.01-2.0 at. %) and a group X element (Ta, Ti, Zr, Hf, W, Cr, Nb, Mo, Ir, Pt, Re, and/or Os), wherein, with regard to precipitates each containing Al, the group X element and Ge generated when a heat treatment at 450 to 600° C. is carried out, the density of some of the precipitates which have equivalent circle diameters of 50 nm or more is controlled.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: April 18, 2017
    Assignee: Kobe Steel, Ltd.
    Inventors: Hiroyuki Okuno, Toshihiro Kugimiya
  • Patent number: 9607812
    Abstract: Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm2 or higher, and a bulk resistivity of 1 m?·cm or less. The number of 0.05 mm2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm2 area of the target surface is 1 or less on average.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: March 28, 2017
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Shoubin Zhang, Keita Umemoto, Masahiro Shoji
  • Patent number: 9605339
    Abstract: A sputtering target for a magnetic recording film containing SiO2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.
    Type: Grant
    Filed: October 19, 2011
    Date of Patent: March 28, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shin-ichi Ogino, Atsushi Nara, Hideo Takami
  • Patent number: 9586847
    Abstract: To provide a tin oxide refractory which prevents volatilization of SnO2 in a high temperature zone from an early stage and which also has high erosion resistance to glass. A tin oxide refractory comprising SnO2, SiO2 and ZrO2 as essential components, wherein the total content of SnO2, SiO2 and ZrO2 in the tin oxide refractory is at least 70 mass %, and, based on the total content of SnO2, SiO2 and ZrO2, the content of SnO2 is from 32 to 98 mol %, the content of SiO2 is from 1 to 35 mol % and the content of ZrO2 is from 1 to 35 mol %.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: March 7, 2017
    Assignee: Asahi Glass Company, Limited
    Inventors: Shuhei Ogawa, Yasuo Shinozaki
  • Patent number: 9579723
    Abstract: The processing technology of a molybdenum-niobium alloy plate target shall be implemented as follows: (1) mix: divide a certain amount of molybdenum powder and niobium powder into, at least, three small portions, and mix each portion of them into a mixed powder. After several rounds of mixing and sieving, a mixed alloy powder will be achieved from a plurality of mixed powders; divide the mixed alloy powder into three portions and mix each portion with other materials, a uniform alloy powder will be obtained by mixing the three portions together; (2) shaping: the alloy compact, which is formed after isostatic pressing, shall be sintered in a high-temperature intermediate frequency furnace for at least 3 hours under protection of hydrogen. The sintering temperature includes three zones, i.e. 0° C.˜800° C., 800° C.˜1600° C. and 1600° C.˜2000° C., and the alloy compact shall be sintered in each of the three temperature zones.
    Type: Grant
    Filed: January 8, 2013
    Date of Patent: February 28, 2017
    Assignee: Baoji Kedipu Nonferrous Metals Processing Co., LTD.
    Inventor: Yuzhu Chen
  • Patent number: 9530872
    Abstract: An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.
    Type: Grant
    Filed: January 2, 2014
    Date of Patent: December 27, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Akiharu Miyanaga, Masayuki Sakakura, Junichi Koezuka, Tetsunori Maruyama, Yuki Imoto
  • Patent number: 9528181
    Abstract: Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 20 to 40 at % of Ga, 0.1 to 3 at % of Sb, and the balance composed of Cu and unavoidable impurities. A method for producing the sputtering target includes a step of producing a starting material powder that is obtained by pulverizing at least Cu, Ga and Sb as simple substances or an alloy that contains two or more of these elements; and a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere, wherein Ga is contained in the starting material powder in the form of a Cu—Ga alloy or in the form of a Ga—Sb alloy.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: December 27, 2016
    Assignees: MITSUBISHI MATERIALS CORPORATION, SOLAR FRONTIER K.K.
    Inventors: Shoubin Zhang, Masahiro Shoji
  • Patent number: 9502224
    Abstract: Provided is a magnetron sputtering target having a ferromagnetic metal element. This magnetron sputtering target includes: a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases that each contain the ferromagnetic metal element and that are different in constituent elements or a content ratio of constituent elements; and an oxide phase. At least one of the plurality of non-magnetic phases is more finely interdispersed with the oxide phase than the magnetic phase.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: November 22, 2016
    Assignee: TANAKA KIKINZOKU KOGYO K.K.
    Inventors: Takanobu Miyashita, Yasuyuki Goto
  • Patent number: 9437486
    Abstract: A sputtering target contains high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within ±30% as a whole target. Dispersion of the oxygen content is within ±80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: September 6, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Koichi Watanabe, Yasuo Kohsaka, Takashi Watanabe, Takashi Ishigami, Yukinobu Suzuki, Naomi Fujioka