Focusing Target (e.g., Conical Target, Plural Inclined Targets, Etc.) Patents (Class 204/298.18)
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Patent number: 12205805Abstract: A sputtering apparatus includes a placement portion where a target having a first opening is placed, an anode, and a metal member. The anode and the metal member are disposed at positions corresponding to the first opening of the target in the placement portion. The anode and the metal member are electrically insulated from each other. The metal member is set to a ground potential or a floating potential.Type: GrantFiled: July 18, 2022Date of Patent: January 21, 2025Assignee: CANON KABUSHIKI KAISHAInventor: Kazuya Demura
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Patent number: 12195843Abstract: Apparatus and methods for multi-cathode barrier seed deposition for high aspect ratio features in a physical vapor deposition (PVD) process are provided herein. In some embodiments, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber. The pedestal rotates with a workpiece on it. The PVD chamber includes a lid assembly includes a first target and a second target of a same target material, where a first surface of the first target defines a first zone of the processing region a first distance from the upper surface of the pedestal, and a second surface of the second target defines a second zone of the processing region a second distance from the plane of the upper surface of the pedestal. A system controller is configured to simultaneously control a first voltage bias for the first target and a second voltage bias for the second target.Type: GrantFiled: January 19, 2023Date of Patent: January 14, 2025Assignee: Applied Materials, Inc.Inventors: Harish V. Penmethsa, Ming-Jui Li
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Patent number: 12142478Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.Type: GrantFiled: September 2, 2022Date of Patent: November 12, 2024Assignee: Applied Materials, Inc.Inventors: Chunming Zhou, Jothilingam Ramalingam, Yong Cao, Kevin Vincent Moraes, Shane Lavan
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Patent number: 12043898Abstract: According to one embodiment, a film formation apparatus and a moisture removing method thereof that can facilitate the removement of moisture in the chamber without the complication of the apparatus are provided.Type: GrantFiled: February 12, 2021Date of Patent: July 23, 2024Assignee: SHIBAURA MECHATRONICS CORPORATIONInventors: Shohei Tanabe, Koji Yoshimura
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Patent number: 12014911Abstract: An example of a sputtering apparatus comprises a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, a shielding plate disposed between the first and the second target and the substrate and having a through-hole through which the sputter particles pass, and an obstructing mechanism. The through-hole has a first opening region through which the sputter particles emitted from the fit target pass and a second opening region through which the sputter particles emitted from the second target pass, and the obstructing mechanism is configured to obstruct the sputter particles emitted from the first target in passing through the second opening region and the sputter particles emitted in the second target from passing through the first opening region.Type: GrantFiled: March 19, 2021Date of Patent: June 18, 2024Assignee: Tokyo Electron LimitedInventors: Shota Ishibashi, Tatsuo Hirasawa, Hiroyuki Toshima, Hiroyuki Iwashita
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Patent number: 12014912Abstract: An apparatus and method for physical vapor deposition includes a magnetron having a plurality of electromagnets disposed between a base and a magnetic conductive plate. The magnetron includes a plurality of individually controlled electromagnets between a base and an electromagnetic plate. The magnetron controls the polarity and strength of current supplied to the respective electromagnets to generate magnetic fields that confine electrons to areas near a target material within the deposition chamber.Type: GrantFiled: May 5, 2021Date of Patent: June 18, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Yu-Young Wang, Wen-Cheng Yang, Chyi-Tsong Ni
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Patent number: 12002667Abstract: There is provided a sputtering apparatus comprising: a target from which sputtered particles are emitted; a substrate support configured to support a substrate; a substrate moving mechanism configured to move the substrate in one direction; and a shielding member disposed between the target and the substrate support and having an opening through which the sputtered particles pass. The shielding member includes a first shielding member and a second shielding member disposed in a vertical direction.Type: GrantFiled: December 20, 2021Date of Patent: June 4, 2024Assignee: Tokyo Electron LimitedInventors: Masato Shinada, Tetsuya Miyashita, Einstein Noel Abarra
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Patent number: 11984300Abstract: A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.Type: GrantFiled: May 19, 2020Date of Patent: May 14, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Takehiro Tanikawa, Shuhei Yamabe, Yohei Uchida, Yasuharu Sasaki
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Patent number: 11851740Abstract: Embodiments described herein relate to encapsulated nanostructured optical devices and methods of encapsulating gratings of such devices by asymmetric selective physical vapor deposition (PVD). In some embodiments, a method for encapsulating optical device gratings includes a first PVD process and a second PVD process that may be carried out simultaneously or sequentially. The first PVD process may provide a first stream of material at a first angle non-perpendicular to a substrate of the grating. The second PVD process may provide a second stream of material at a second angle non-perpendicular to the substrate of the grating. The combination of the first PVD process and the second PVD process forms an encapsulation layer over the grating and one or more air gaps between adjacent fins of the grating.Type: GrantFiled: December 17, 2019Date of Patent: December 26, 2023Assignee: Applied Materials, Inc.Inventors: Ludovic Godet, Bencherki Mebarki, Jinxin Fu
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Patent number: 11823859Abstract: A method of sputtering a layer on a substrate using a high-energy density plasma (HEDP) magnetron includes positioning the magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying unipolar negative direct current (DC) voltage pulses from a pulse power supply with a pulse forming network (PFN) to a pulse converting network (PCN); and adjusting an amplitude and frequency associated with the plurality of unipolar negative DC voltage pulses causing a resonance mode associated with the PCN. The PCN converts the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates a high-density plasma discharge on the HEDP magnetron.Type: GrantFiled: December 18, 2020Date of Patent: November 21, 2023Assignee: IonQuest Corp.Inventor: Bassam Hanna Abraham
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Patent number: 11823879Abstract: There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.Type: GrantFiled: January 11, 2022Date of Patent: November 21, 2023Assignee: Tokyo Electron LimitedInventors: Masato Shinada, Tetsuya Miyashita, Naoki Watanabe
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Patent number: 11766726Abstract: A method for machining a sputtering target that includes a sputtering surface, an opposing surface opposite to the sputtering surface, and an outer peripheral surface being between the sputtering surface and the opposing surface comprises the steps of: fixing the sputtering target on a fixing table by mounting the sputtering surface or the opposing surface of the sputtering target on the fixing table; and cutting the outer peripheral surface of the sputtering target by a cutting tool while rotating the cutting tool along a circumferential direction of the outer peripheral surface of the sputtering target.Type: GrantFiled: February 9, 2018Date of Patent: September 26, 2023Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Masahiro Fujita, Koji Nishioka
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Patent number: 11692262Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.Type: GrantFiled: July 16, 2020Date of Patent: July 4, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Alexander Jansen, Keith A. Miller, Prashanth Kothnur, Martin Riker, David Gunther, Emily Schooley
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Patent number: 11557473Abstract: A physical vapor deposition chamber comprising a tilting substrate support is described. Methods of processing a substrate are also provided comprising tilting at least one of the substrate and the target to improve the uniformity of the layer on the substrate from the center of the substrate to the edge of the substrate. Process controllers are also described which comprise one or more process configurations causing the physical deposition chamber to perform the operations of rotating a substrate support within the physical deposition chamber and tilting the substrate support at a plurality of angles with respect to a horizontal axis.Type: GrantFiled: April 16, 2020Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Wen Xiao, Vibhu Jindal, Sanjay Bhat
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Patent number: 11515171Abstract: This patent application relates to methods and apparatus for temperature modification and reduction of contamination in bonding stacked microelectronic devices with heat applied from a bond head of a thermocompression bonding tool. The stack is substantially enclosed within a skirt carried by the bond head to reduce heat loss and contaminants from the stack, and heat may be added from the skirt.Type: GrantFiled: June 8, 2020Date of Patent: November 29, 2022Assignee: Micron Technology, Inc.Inventors: Xiaopeng Qu, Hyunsuk Chun, Brandon P. Wirz, Andrew M. Bayless
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Patent number: 11473186Abstract: EC film stacks and different layers within the EC film stacks are disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.Type: GrantFiled: July 24, 2018Date of Patent: October 18, 2022Assignee: e-Vision, LLCInventors: Anita Trajkovska-Broach, Ying Sun, William Kokonaski
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Patent number: 11469096Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.Type: GrantFiled: April 13, 2020Date of Patent: October 11, 2022Assignee: Applied Materials, Inc.Inventors: Chunming Zhou, Jothilingam Ramalingam, Yong Cao, Kevin Vincent Moraes, Shane Lavan
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Patent number: 10504765Abstract: Embodiments include an electrostatic chuck assembly having an electrostatic chuck mounted on an insulator. The electrostatic chuck and insulator may be within a chamber volume of a process chamber. In an embodiment, a ground shield surrounds the electrostatic chuck and the insulator, and a gap between the ground shield and the electrostatic chuck provides an environment at risk for electric field emission. A dielectric filler can be placed within the gap to reduce a likelihood of electric field emission. The dielectric filler can have a flexible outer surface that covers or attaches to the electrostatic chuck, or an interface between the electrostatic chuck and the insulator Other embodiments are also described and claimed.Type: GrantFiled: April 24, 2017Date of Patent: December 10, 2019Assignee: Applied Materials, Inc.Inventors: Kartik Ramaswamy, Anwar Husain, Haitao Wang, Evans Yip Lee, Jaeyong Cho, Hamid Noorbakhsh, Kenny L. Doan, Sergio Fukuda Shoji, Chunlei Zhang
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Patent number: 10236412Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.Type: GrantFiled: May 15, 2018Date of Patent: March 19, 2019Assignee: Applied Materials, Inc.Inventors: Mingwei Zhu, Nag B. Patibandla, Rongjun Wang, Daniel Lee Diehl, Vivek Agrawal, Anantha Subramani
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Patent number: 9988711Abstract: An apparatus may include an extraction assembly comprising at least a first extraction aperture and second extraction aperture, the extraction assembly configured to extract at least a first ion beam and second ion beam from a plasma; a target assembly disposed adjacent the extraction assembly and including at least a first target portion comprising a first material and a second target portion comprising a second material, the first target portion and second target portion being disposed to intercept the first ion beam and second ion beam, respectively; and a substrate stage disposed adjacent the target assembly and configured to scan a substrate along a scan axis between a first point and a second point, wherein the first target portion and second target portion are separated from the first point by a first distance and second distance, respectively, the first distance being less than the second distance.Type: GrantFiled: May 14, 2015Date of Patent: June 5, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Alexandre Likhanskii, William Davis Lee, Svetlana B. Radovanov
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Patent number: 9934950Abstract: A sputtering apparatus includes a process chamber in which a sputtering process is performed, a substrate holder provided in the process chamber and fixing a horizontal position of a substrate during the sputtering process, and a first sputter gun provided to be vertically spaced apart from the substrate in the process chamber. The first sputter gun is spaced apart from the substrate by a first horizontal distance during the sputtering process. The first sputter gun is fixed during the sputtering process. The first horizontal distance is a horizontal distance between the substrate and the first sputter gun when viewed from a plan view.Type: GrantFiled: July 6, 2016Date of Patent: April 3, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Joonmyoung Lee, Woojin Kim
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Patent number: 9752228Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.Type: GrantFiled: March 12, 2010Date of Patent: September 5, 2017Assignee: Applied Materials, Inc.Inventors: Zhendong Liu, Rongjun Wang, Xianmin Tang, Srinivas Gandikota, Tza-Jing Gung, Muhammad M. Rasheed
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Patent number: 9721771Abstract: A film forming apparatus includes a processing chamber, a gas supply unit, a stage, at least one holder, a power supply, at least one magnet and a magnet rotation unit. The gas supply unit is configured to supply a gas into the processing chamber. The stage is provided in the processing chamber, and has a center coinciding with a central axis which extends in a vertical direction. The stage is configured to cool the object to about ?50° C. or below. Each holder is configured to hold a target, and extends in an annular shape above the stage inside the processing chamber. The power supply is configured to generate a voltage to be applied to the target. Each magnet is provided outside the processing chamber and faces the target. The magnet rotation unit is configured to rotate the magnet about the central axis.Type: GrantFiled: March 3, 2016Date of Patent: August 1, 2017Assignee: TOKYO ELECTRON LIMITEDInventor: Yusuke Suzuki
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Patent number: 9005414Abstract: The disclosure relates to a magnet arrangement for a sputtering system, wherein the magnet arrangement is adapted for a rotatable target of a sputtering system and includes: a first magnet element extending along a first axis; a second magnet element being disposed around the first magnet element symmetrically to a first plane; wherein the second magnet element includes at least one magnet section intersecting the first plane; and wherein a magnetic axis of the at least one magnet section is inclined with respect to a second plane being orthogonal to the first axis. Further, the disclosure relates to a target backing tube for a rotatable target of a sputtering system, a cylindrical rotatable target for a sputtering system, and a sputtering system.Type: GrantFiled: July 20, 2010Date of Patent: April 14, 2015Assignee: Applied Materials, Inc.Inventors: Andreas Lopp, Juergen Grillmayer, Wolfgang Krock
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Patent number: 8968538Abstract: A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power. A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21); and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).Type: GrantFiled: September 29, 2009Date of Patent: March 3, 2015Assignee: Canon Anelva CorporationInventors: Toru Kitada, Naoki Watanabe, Motonobu Nagai, Masahiro Suenaga, Takeo Konno
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Patent number: 8911602Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode.Type: GrantFiled: April 22, 2013Date of Patent: December 16, 2014Inventor: Makoto Nagashima
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Patent number: 8906208Abstract: A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.Type: GrantFiled: May 10, 2011Date of Patent: December 9, 2014Assignee: Canon Anelva CorporationInventors: Toru Kitada, Naoki Watanabe, Motonobu Nagai
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Patent number: 8679306Abstract: A sputtering apparatus with high usage efficiency of a target is provided. A sputtering apparatus of the present invention includes first and second ring magnets, first and second magnet members arranged inside a ring of the first and second ring magnets, wherein in the first and second ring magnets and the first and second magnet members, magnetic poles with the same magnetism are faced toward the rear surface of a first and a second targets. Thus, in the rear surface of the first and second targets, the magnetic poles with the same polarity are adjacently arranged, and the absolute value of the strength of horizontal magnetic field components formed in the surfaces of the first and second targets becomes small and the strength distribution becomes narrow, and the strength of vertical magnetic field components becomes uniform; and consequently, a non-erosion portion is not produced in the first and second targets.Type: GrantFiled: December 6, 2007Date of Patent: March 25, 2014Assignee: Ulvac, Inc.Inventors: Satoru Takasawa, Sadayuki Ukishima, Noriaki Tani, Satoru Ishibashi
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Patent number: 8673123Abstract: A magnetron sputtering device includes a target holder, a substrate holder, and a first driver. The target holder defines a sputtering space therein, and includes at least one target tray arranged at a periphery of the sputtering space. The substrate holder is rotatably positioned in the sputtering space. The first driver is connected to the substrate holder. The first driver is operable to rotate the substrate holder relative to the target holder.Type: GrantFiled: September 29, 2009Date of Patent: March 18, 2014Assignee: Hon Hai Precision Industry Co., Ltd.Inventor: Shao-Kai Pei
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Patent number: 8470145Abstract: There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.Type: GrantFiled: June 23, 2009Date of Patent: June 25, 2013Assignee: Ulvac, Inc.Inventors: Naoki Morimoto, Tomoyasu Kondo, Daisuke Mori, Kyuzo Nakamura
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Patent number: 8454810Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cathode.Type: GrantFiled: July 14, 2006Date of Patent: June 4, 2013Assignee: 4D-S Pty Ltd.Inventor: Makoto Nagashima
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Patent number: 8454804Abstract: Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.Type: GrantFiled: October 28, 2005Date of Patent: June 4, 2013Assignee: Applied Materials Inc.Inventors: Mengqi Ye, Zhendong Liu, Peijun Ding
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Patent number: 8382966Abstract: A sputtering system is disclosed.Type: GrantFiled: June 28, 2010Date of Patent: February 26, 2013Assignee: Samsung Display Co., Ltd.Inventors: Seung-Ho Choi, Suk-Won Jung, Young-Mook Choi, Hyun-Keun Song
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Patent number: 8168049Abstract: A sputtering apparatus of a continuous system that a first target 17a and a second target 17b are arranged to obliquely face a substrate 6 and other targets to form a film while conveying the substrate 6 along a conveying path 15, wherein shields 19a, 19b facing the conveying direction of at least the substrate 6 are provided between the conveying path 15 and the first and second targets 17a, 17b to have therebetween an extended region toward the conveying path 15 in the space between the first target 17a and the second target 17b to enable to obtain a high quality film and to enable to prevent particles from diffusing in a chamber 3.Type: GrantFiled: May 19, 2009Date of Patent: May 1, 2012Assignee: Canon Anelva CorporationInventor: Daisuke Aonuma
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Patent number: 8147657Abstract: A sputtering apparatus according to the present invention is provided with first to fourth targets. The first and the second targets are disposed so that their surfaces face each other. The third and the fourth targets are also disposed so that their surfaces face each other. When a dielectric film is formed, sputtering is alternately performed on the first and the second targets and on the third and the fourth targets. When sputtering is performed on two of the targets having surfaces that face each other, the remaining two targets function as a ground. As a result, abnormal discharges are inhibited.Type: GrantFiled: June 10, 2008Date of Patent: April 3, 2012Assignee: Ulvac, Inc.Inventors: Satoru Takasawa, Sadayuki Ukishima, Noriaki Tani, Satoru Ishibashi
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Patent number: 8092657Abstract: A module to carry targets in a sputter deposition installation for coating two-sided substrates is described. The module is mountable to the installation through an interface flange that carries at least two targets with their associated magnet systems. When the module is mounted, the targets take positions at opposite sides of the two-sided substrate, while the magnet systems orient the sputter deposition towards the substrate. The module enables coating of both sides of the substrate in one single pass. Different configurations are described with gas distribution systems and additional substrate supports. An enclosure with adjustable blinds in order to reduce gas spreading is also included.Type: GrantFiled: June 14, 2006Date of Patent: January 10, 2012Assignee: Bekaert Advanced CoatingsInventors: Wilmert De Bosscher, Ivan Van De Putte, Koen Staelens
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Publication number: 20110226617Abstract: A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder.Type: ApplicationFiled: March 22, 2011Publication date: September 22, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Ralf Hofmann, Majeed A. Foad
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Patent number: 8012314Abstract: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.Type: GrantFiled: March 20, 2007Date of Patent: September 6, 2011Assignee: Hoya CorporationInventors: Osamu Nozawa, Hideaki Mitsui
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Patent number: 7981263Abstract: A sputtering apparatus includes a susceptor having a substrate and a plurality of target devices facing the substrate and substantially parallel to each other, each target device being rotatable.Type: GrantFiled: May 7, 2007Date of Patent: July 19, 2011Assignee: LG Display Co., Ltd.Inventors: Hyuk Sang Yoon, Hwan Kyu Yoo, Byung Han Yun
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Patent number: 7959775Abstract: A ceramic window in an iPVD module is provided with features that reduce heating of the window as a result of metal film deposits on the window. Dielectric dissipation and resistive heating of the metal film are reduced by the features. Reducing of the window heating is provided by either shaping the window surface on the chamber side of the window or providing structurally floating features to block at least a portion of a conductive path from forming on the chamber side window surface. The shaping can produce contours that prevent current paths from being created in the forming metal film. In addition or in the alternative, texture on the chamber side surface of the window is provided to increase surface area and thereby reduce film thickness.Type: GrantFiled: September 29, 2006Date of Patent: June 14, 2011Assignee: Tokyo Electron LimitedInventors: Mirko Vukovic, Ronald Nasman
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Publication number: 20110100799Abstract: A sputter deposition system adapted for depositing a thin film onto a substrate surface is provided. The system includes a cathode assembly having at least two cathode targets opposing the substrate surface and adapted for providing cathode material for forming the thin film. A plasma source is adapted for generating a plasma for sputtering cathode material off the at least two cathode targets. A magnetic field generator is adapted for providing a magnetic field which is controllable independently of the plasma source such that such that a difference between high deposition rate portions and low deposition rate portions is compensated by the action of the magnetic field on charged particle movements.Type: ApplicationFiled: November 4, 2009Publication date: May 5, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Andreas Lopp, Marcus Bender
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Patent number: 7914654Abstract: This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.Type: GrantFiled: March 20, 2007Date of Patent: March 29, 2011Assignee: Anelva CorporationInventors: David Djulianto Djayaprawira, Koji Tsunekawa, Motonobu Nagai
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Patent number: 7887677Abstract: A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.Type: GrantFiled: September 21, 2006Date of Patent: February 15, 2011Assignee: Nissin Electric Co., Ltd.Inventors: Takashi Mikami, Atsushi Tomyo, Kenji Kato, Eiji Takahashi, Tsukasa Hayashi
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Patent number: 7857946Abstract: A sputtering film forming method. which positions a target 4 and 5 at an incline to a surface of a substrate 10 whereupon a film is to be formed, and forms the film upon the surface of the substrate 10 whereupon the film is to be formed in an incline direction while the substrate 10 is rotated about a normal axis, terminates the forming of the film at a predetermined timing from the commencement of the forming of the film, wherein the forming of the film is terminated, when the substrate has rotated by 360 degrees×n+180 degrees+?, where n is a natural number, including 0, and ?10 degrees<?<10 degrees.Type: GrantFiled: April 16, 2008Date of Patent: December 28, 2010Assignee: Canon Anelva CorporationInventors: Naomu Kitano, Naoki Yamada, Takaaki Tsunoda, Nobuo Yamaguchi, Motomu Kosuda
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Publication number: 20100294658Abstract: A magnetron sputtering device includes a target holder, a substrate holder, and a first driver. The target holder defines a sputtering space therein, and includes at least one target tray arranged at a periphery of the sputtering space. The substrate holder is rotatably positioned in the sputtering space. The first driver is connected to the substrate holder. The first driver is operable to rotate the substrate holder relative to the target holder.Type: ApplicationFiled: September 29, 2009Publication date: November 25, 2010Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventor: SHAO-KAI PEI
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Publication number: 20100258430Abstract: A sputtering apparatus forming a film on a surface of a substrate, including: a table on which the substrate is placed; a plurality of targets disposed so that center axes thereof incline with respect to a normal line of the substrate placed on the table; and a plurality of magnetic field applying devices disposed between the targets and the substrate so as to surround the substrate, wherein the magnetic field applying devices generates a magnetic field, which has a horizontal magnetic field component parallel to the surface of the substrate, above the peripheral edge of the substrate.Type: ApplicationFiled: November 26, 2008Publication date: October 14, 2010Applicant: ULVAC, INC.Inventor: Yukio Kikuchi
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Patent number: 7713390Abstract: Apparatus for processing a substrate in a physical vapor deposition chamber is provided herein. In one embodiment, apparatus for processing a substrate in a physical vapor deposition chamber having a target disposed in a lid assembly and a grounded chamber wall includes a ground frame and a ground shield. The ground frame is configured to be insulatively coupled to the lid assembly and has an electrically conductive lower surface. The ground shield has an electrically conductive wall that is adjustably and electrically coupled to the conductive lower surface of the ground frame. The ground shield is configured to circumscribe the target and has an upper edge configured to provide a gap between the upper edge and a peripheral edge of the target when installed.Type: GrantFiled: May 16, 2005Date of Patent: May 11, 2010Assignee: Applied Materials, Inc.Inventor: Edward Golubovsky
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Publication number: 20100078309Abstract: A sputtering method is for forming, in a vacuum chamber, an initial layer on a film formation target object and then further forming a second layer on the initial layer therein, and the method includes: in the vacuum chamber, arranging surfaces of a pair of targets to face each other while distanced apart from each other at a preset distance and to be inclined toward the film formation target object placed at a lateral position between the targets, and then sputtering the targets by generating a magnetic field space on the facing surfaces of the pair of targets, and thus forming the initial layer on the film formation target object by using particles sputtered by the sputtering; and further forming the second layer on the film formation target object at a higher film forming rate than a film forming rate of the initial layer.Type: ApplicationFiled: January 25, 2008Publication date: April 1, 2010Applicants: OSAKA VACUUM, LTD., TOKYO ELECTRON LIMITEDInventors: Yoshihiko Ueda, Kazuki Moyama, Koji Fukumori
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Publication number: 20100025237Abstract: An embodiment of this document provides a deposition apparatus for an organic electroluminescent display device, comprising a vacuum chamber, a deposition source placed on a bottom within the vacuum chamber, a mask configured to mask a source generated by the deposition source, a target substrate on which the source passing through the mask is deposited, a first plate placed on an upper side within the vacuum chamber, wherein magnets are arranged with them being spaced apart from each other on one side of the first plate, and a second plate placed below the first plate, wherein grooves into which the respective magnets are inserted are formed in the second plate.Type: ApplicationFiled: August 13, 2009Publication date: February 4, 2010Inventors: Jongsung Kim, Minki Kim
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Patent number: 7625472Abstract: A plasma-assisted sputter deposition system includes a reactor 1 into which a process gas is introduced; a doughnut-shaped electrode to be sputtered by plasma, in which a lower surface thereof is angled to a surface of a wafer; a spinning plate that spin on its central axis while moving over a circle above the doughnut-shaped electrode, in which the spinning plate contains magnet arrangement; an electrical power sources connected to the doughnut-shaped electrode, and a wafer holder for placing a wafer for film deposition, which is at rest during the film deposition.Type: GrantFiled: January 11, 2005Date of Patent: December 1, 2009Assignee: Canon Anelva CorporationInventor: Sunil Wickramanayaka