Abstract: A magnet target comprising a fixing plate, a plurality of shafts arranged in an array, a plurality of connecting rods pivotably provided onto a plate surface of the fixing plate at one end and capable of rotating about corresponding one of the shafts, and a plurality of magnets that are each attached to the other fee end of one connecting rod. The magnets comprise magnets having external S poles and magnets having external N poles, and the magnets having external S poles and magnets having external N poles are arranged alternatively in an array.

Abstract: There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.

Abstract: A physical vapor deposition (PVD) system includes a chamber and a plurality of electromagnetic coils arranged around the chamber. First and second annular bands of permanent magnets are arranged around the chamber with poles oriented perpendicular to a magnetic field imposed by the electromagnetic coils. Each of the permanent magnets in the first annular band is arranged with poles having a first polarity closest to a central axis of the chamber. Each of the permanent magnets in the second annular band is arranged anti-parallel with respect to the permanent magnets in the first annular band.

Abstract: A film-forming device includes: a shield part placed so as to surround the sides of the target; a rod-shaped magnetic field generation unit for generating a magnetic field, the magnetic field generation unit being placed toward the back surface of the target; and a drive unit for reciprocatingly driving the magnetic field generation unit in a linear manner along a drive direction, which is a direction perpendicular to the length direction of the magnetic field generation unit, in a horizontal plane, which is a plane perpendicular to the front/back direction of the target. When the magnetic field generation unit is located at the end of the range within which it is driven by the drive unit, the distance in the drive direction between the magnetic field generation unit and the projection when the shield part is projected perpendicularly to the horizontal plane is 10 mm or more.

Abstract: An apparatus and method are provided for improved utilization of a sputter target in the longitudinal end regions. The focus of erosion in the end regions is widened, thereby extending the useful life of the target. This provides improved efficiency and reduces waste because a greater proportion of the target material in the more expansive central region can be harvested, because the target is utilized for a longer period of time.

Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

Abstract: The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.

Abstract: A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.

Abstract: In a magnetron sputtering apparatus an arrangement is made such that the peripheral portion of a target is uniformly eroded to attain a high efficiency in target utilization and, in addition, that an abnormal discharging hardly occurs to thereby enable satisfactory thin film forming. A magnet assembly is provided behind a target that is disposed opposite to the process substrate. This magnet assembly has a central magnet that is disposed linearly along the longitudinal direction, and a peripheral magnet that is disposed so as to enclose the periphery of the central magnet, while changing the polarity on the side of the target. At this time, among the respective magnetic fluxes generated between the central magnet and the peripheral magnet at the longitudinally end portions of the magnet assembly, the position at which the vertical component of the magnetic field becomes zero is locally shifted to the central magnet within a certain range.

Abstract: A magnetron sputtering cathode includes: a yoke; a magnetic circuit having a central magnet portion, a peripheral edge magnet portion, an auxiliary magnet portion, and a parallel area; and a backing plate. The central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are disposed so that polarities of tip portions of the central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are different from each other at portions between adjacent magnet portions. The magnetic field profile observed from above of the backing plate and the magnetic flux density in a horizontal direction are determined so that the magnetic flux density in a first area is a positive value and the magnetic flux density in a second area is a negative value with respect to a position corresponding to the central magnet portion as a boundary.

Abstract: A method and apparatus for sputter deposition. The method including: providing a sputter target having a back surface and an exposed front surface; providing a source of magnetic field lines, the magnetic field lines extending through the sputter target from the back surface to the exposed front surface of the sputter target; providing one or more pole extenders between magnetic poles of the source of the magnetic field lines and the exposed front surface of the sputter target.

Abstract: A target assembly for material deposition includes a first target piece having a first sputtering surface and comprising a first target material that is to be sputtered off the first sputtering surface and to deposit on a substrate. The target assembly also includes a second target piece juxtaposed to the first target piece. The second target piece comprises a second sputtering surface and a second target material that can be sputtered off the second sputtering surface and to deposit on the substrate. The first target piece and the second target piece are configured to be switched in positions and/or orientations after a period of sputtering operations.

Abstract: A magnet unit, which can realize uniform film thickness distribution of a thin film formed on a substrate without increasing the length and width of a target. The magnet unit includes a peripheral magnet, which is disposed on the yoke on the back side of a cathode electrode so as to follow the outline of a target, and an inner magnet disposed in the peripheral magnet and having a polarity different from the polarity of the peripheral magnet. The magnet unit provides a magnetic track MT that is a set of regions which tangents of magnetic field lines M generated on the target parallels to the target surface. The magnet unit further includes n (n is a positive integer of two or more) extending magnetic pole portions and n?1 projecting magnetic pole portions, which form 2n?1 folded shape portions U at the both ends in the longitudinal direction of the magnetic track.

Abstract: A magnetron sputtering apparatus includes: a target provided in a sputtering chamber; a susceptor opposed to the target; a high-frequency power supply connected to the susceptor; a plate provided outside the sputtering chamber and coaxial with a central axis of the target; a rotary motion mechanism configured to rotate the plate about the central axis; S-pole magnets placed on one side of the plate with their S-pole end directed to the target; and first and second N-pole magnets placed on the one side of the plate with their N-pole end directed to the target. The first N-pole magnets are placed along a circle coaxial with the plate and opposed to an outer peripheral vicinity of the target. The S-pole magnets are placed inside the first N-pole magnets and along a circle coaxial with the plate. The second N-pole magnets are placed inside the S-pole magnets and along a circle coaxial with the plate.

Abstract: A machine for coating a transparent substrate for the production of display screens comprises a coating chamber that has a modular design. Each of the modules 1 features a chamber section 2, a first support 3 that is arranged removably in or at the chamber section 2, and a second support 4 that is arranged removably at the first support 3. Whereas the first support 3 bears the cathodes, the second support 4 is formed as a cover at which are arranged the pumps for producing a vacuum in the coating chamber. Carriers 3 and 4 can be removed laterally from the chamber section 2 to such an extent that areas 11a, 11b accessible to persons can be formed between the module components. In this way, the components of the machine are readily accessible, for example for maintenance purposes. Work can be done simultaneously on the cathodes and in the chamber interior.

Abstract: The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode (802), a rotatable stage (801) and a rotatable shielding plate (805). The sputtering apparatus controls the rotation of at least one of the cathode (802), stage (801) and shielding plate (805) so that sputtered particles impinging at an angle formed with respect to a normal line of the substrate (804) of 0° or more and 50° or less out of sputtered particles generated from the target (803a) during sputtering are made to impinge on the substrate (804).

Abstract: The magnetron sputtering arrangement (2) comprises a target arrangement (3) comprising a target (3a1) having a sputtering surface (4) the shape of which defines a first (A1 and a second axis (A2) being mutually perpendicular and being, at least approximately, axes of mirror-symmetry of the sputtering surface; a magnet arrangement (40) generating a magnetic field above said sputtering surface; and a drive (70) adapted to establishing a substantially transitional relative movement between said magnetron magnetic field and said sputtering surface. Said relative movement describes a path (80) defining a third (A3) and a fourth axis (A4) being mutually perpendicular and being, at least approximately, axes of mirror-symmetry of the path (80). Said third axis is at least approximately parallel to said first axis (A3), and said path (80) has at least two pointed corners (81), each corner located on one of said third axis (A3) and said fourth axis (A4).

Abstract: To provide a sputtering apparatus and method, and a sputtering control program which are configured simply and can secure the uniformity of the film thickness from the beginning to the end of the use of a target. There are provided: a target 15 disposed so as to face an object to be treated 19; a permanent magnet unit M which generates a high-density plasma by means of a magnetic field and deposits a material of the target 15 on the object to be treated, in the form of a film; a rotational mechanism 9 which rotates the permanent magnet unit M; and a rotation number control apparatus 7 which gradually changes the number of rotations of the permanent magnet unit M rotated by the rotational mechanism 9.

Abstract: Previous limitations in utilizing energetic vapor deposition means are addressed through the introduction of a novel means of vapor deposition, namely, an Electron-Assisted Deposition (EAD) process and apparatus. The EAD mode of film growth disclosed herein is generally achieved by, first, forming a magnetic field that possesses field lines that intersect electrically non-grounded first and second surfaces, wherein at least one surface is a workpiece, thereby forming a magnetic trap between first and second surfaces; second, introducing a high flux of electrons axially into the magnetic field existing between the first and second surfaces, so that the electrons form an electron-saturated space-charge in the space adjacent to the substrate, wherein plasma interactions with the substrate are substantially avoided, and modification of film growth processes is provided predominantly by electron—rather than plasma—bombardment.

Abstract: An apparatus for coating a substrate with a layer of inhomogeneous but continuous thickness is provided. The apparatus may include a holding device configured to hold a substrate to be coated; a coating device comprising at least one coating source for providing a coating material, which is arranged at a distance from the holding device; and at least one magnetizing device configured to generate a predetermined magnetic field in the region between the substrate to be coated and the coating source. The magnetizing device may be arranged on the opposite side of the holding device to the coating source.

Abstract: A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate comprises a backside surface having a plurality of concentric circular grooves and a plurality of arcuate channels which intersect the circular grooves. The sputtering target can be positioned abutting a heat exchanger housing which holds heat transfer fluid and a plurality of rotatable magnets.

Abstract: In one embodiment, a magnetron sputtering apparatus forms a closed plasma loop and an open plasma loop within the closed plasma loop. The open plasma loop allows for relatively uniform erosion on the face of a target by broadening the sputtered area of the target. The open plasma loop may be formed and swirled using a rotating magnetic array to average the target erosion.

Abstract: A magnetron sputtering cathode for use in a vacuum deposition process is disclosed wherein the cathode is coated on its sides with an electrically insulating material such as alumina to prevent arcing, and wherein the first end surface of the cathode supports a material to be sputtered. The bottom of the cathode may also be coated with an electrically insulating coating or may be resting upon an insulating platform.

Abstract: A method of forming a uniform thickness layer of a selected material on a surface of a substrate comprises steps of: (a) providing a multi-stage cathode sputtering apparatus comprising a group of spaced-apart cathode/target assemblies and a means for transporting at least one substrate/workpiece past each cathode/target assembly, each cathode/target assembly comprising a sputtering surface oriented substantially parallel to the first surface of the substrate during transport past the group of cathode/target assemblies, the group of cathode/target assemblies adapted for providing different angular sputtered film thickness profiles; and (b) transporting the substrate past each cathode/target assembly while providing different sputtered film thickness profiles from at least some of the cathode/target assemblies, such that a plurality of sub-layers is deposited on the surface of the substrate/workpiece which collectively form a uniform thickness layer of the selected material.

Abstract: A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.

Abstract: A magnetron sputtering target comprises a magnetron device and a target positioned in a magnetic field of the magnetron device. The magnetron device comprises a metal plate, a plurality of first magnets and second magnets. A direction of the magnetic lines of the first magnets is opposite to that of the second magnets. The first magnets and the second magnets are embedded in the metal plate and arranged in a number of rows and columns. At least one first magnet is adjacent to a second magnet in one row, and at least one first magnet is adjacent to a second magnet in one column, therefore, there are magnetic lines in row direction and column direction exist in the magnetic field of the magnetron device.

Abstract: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature, where the liquid channel has a wider cross-sectional area around the middle portion of the target backing plate to increase cooling of the middle portion of the target. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process.

Abstract: A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.

Abstract: A processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate back and forth across an arc over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

Abstract: Apparatus for processing a substrate in a physical vapor deposition chamber is provided herein. In one embodiment, apparatus for processing a substrate in a physical vapor deposition chamber having a target disposed in a lid assembly and a grounded chamber wall includes a ground frame and a ground shield. The ground frame is configured to be insulatively coupled to the lid assembly and has an electrically conductive lower surface. The ground shield has an electrically conductive wall that is adjustably and electrically coupled to the conductive lower surface of the ground frame. The ground shield is configured to circumscribe the target and has an upper edge configured to provide a gap between the upper edge and a peripheral edge of the target when installed.

Abstract: A dual magnetron for plasma sputtering in which two distinctly different magnetrons are mounted on a common plate rotating about a central axis in back of a target. At least one of the magnetrons is switched on and off by changes in chamber pressure or target power while the other magnetron, if it does switch, switches in complementary fashion. When the two magnetrons are mounted at different radii, the switching effects a effective movement of the magnetron such that different areas of the target are exposed to a sputtering plasma. In particular, a small unbalanced magnetron may scan the target edge to produce a highly ionized sputter flux and a larger magnetron positioned near the center can be switched on to clean sputter material redeposited on the target center.

Abstract: Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop.

Abstract: Certain example embodiments relate to techniques for reducing the amount of debris being formed on the surface of planar sputtering targets. More particularly, a coating may be applied to the sputtering material in areas where sputtering substantially does not occur (typically inside and outside of a racetrack) in certain example embodiments. The coating optionally may be cured. In certain example embodiments, the coating may be include inorganic materials or materials that resist decomposition in a severely oxidizing environment, and/or are electrically non-conductive materials. For example, the coating may be a cured-form sol-gel comprising, for example, silicon oxide, titanium oxide, and/or the like. The coating substantially encapsulates the target material where sputtering substantially does not occur, thus reducing the amount of debris that is created during sputter coating.

Abstract: A sputtering apparatus allowing thick targets and method of making the same. The apparatus includes a sputtering target with a glow discharge plasma formed thereon during sputtering. The sputtering target is disposed in a plane, with a front of the plane defined as the side on which the glow discharge plasma is located during sputtering and a back of the plane defined as the opposite side. The sputtering apparatus also includes a magnetic circuit with an electrically floating center pole and an electrically floating outside pole. Both the center pole and outside pole are at least partially disposed on the front side of the plane defined by the sputtering target.

Abstract: A method of producing substrates with functional layers which have high optical properties and/or a high surface smoothness, in particular a low turbidity and significantly lower roughness, is provided. The method includes a sputtering process for coating a substrate with at least one functional layer, the sputtering process being interrupted at least once by the application of an intermediate layer with a thickness of less than 20 nm.

Abstract: A sputtering system includes a disk-shaped target concentric with an annular anode in a reaction chamber. A thermally-sensitive sample is arranged in the reaction chamber so as to receive material sputtered from the target. The thermally-sensitive sample can be a soft tissue biological specimen. A magnet is arranged proximal to the sample within the reaction chamber. The magnet can be a U-shaped magnet or one or more bar magnets. During sputtering from the target, the magnetic field of the magnet deflects the trajectory of secondary electrons generated by the sputtering process, thereby protecting the sample from heating and damage.

Abstract: A sputtering cathode assembly attachable to a cathode mounting plate for a thin-film vapor deposition chamber. The cathode assembly includes a magnet module and a cathode body generally coextensive with and sealingly housing the magnet module and defining a water channel between a top plate of the cathode body and a cooling channel plate of the magnet module. An elongated target is releasably connected atop and coextensive with the top plate and secured in place by a unique threaded fastener engagement between a target clamp and an edge portion of the cathode body whereby the target is replaceable without disassembly of the cathode body. Unique replaceable elongated fastener receiving inserts releasably secure said target against the target plate to effect target replacement without disassembly of the cathode body.

Abstract: Methods and apparatus for generating a strongly-ionized plasma are described. An apparatus for generating a strongly-ionized plasma according to the present invention includes an anode and a cathode that is positioned adjacent to the anode to form a gap there between. An ionization source generates a weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in the gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating the strongly-ionized plasma.

Abstract: In one embodiment, a magnetron sputtering apparatus includes one or more magnet arrays for moving ions or charged particles on at least two plasma discharge paths on a target. Charged particles on one of the plasma discharge paths are moved in one direction, while charged particles on the other plasma discharge path are moved in the opposite direction to reduce rotational shifting of deposition flux on the patterned substrates. The plasma discharge paths may be formed by two symmetric magnet arrays or a single asymmetric magnet array rotated from behind the target.

Abstract: A sputter coating system comprises a vacuum chamber, means for generating a vacuum in the vacuum chamber, a gas feed system attached to the vacuum chamber, a gas plasma forming system attached to the vacuum chamber, a system for confining and guiding a gas plasma within the vacuum chamber, and a prism-shaped sputter target assembly, with the material to be sputtered forming at least the outer surface of the target assembly and positioned such that the outer surface is surrounded by the plasma within the vacuum chamber. A negative polarity voltage is applied to the surface of the material such that sputtering occurs.

Abstract: A magnetic arrangement for a planar magnetron, in which an initial magnetic pole encompasses a second magnetic pole. This magnetic arrangement is moved linear in longitudinal direction to a target by a specific value and then moved back in opposite direction by the same value. In one version, an additional perpendicular motion is effected. The magnet arrangement is designed so that north and south pole interlock and waviform racetracks are generated. This enables constant sputtering from the entire target surface.

Abstract: A generally rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron includes a closed plasma loop formed in a convolute shape, for example, serpentine or rectangularized helix with an inner pole of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole having the opposed polarity.

Abstract: A device for magnetically enhanced sputtering and plasma deposition includes a plasma source unit and a work piece processing unit in which an anode space and a processing chamber are located in direct communication with each other. Sputtering and reactive gases are provided through an inlet of the processing chamber holding the work piece. Pulsed electric discharges are produced between the magnetron sputtering cathode and the anode, including walls of the anode space. A stationary magnetic mirror trap is provided in the combined vessel by an anode coil surrounding the anode space and another coil mounted at the processing chamber remote from the cathode. A plasma can then flow into the processing chamber suitable for reactive deposition on three-dimensional and large work pieces. A chemisorption filter including filter plates is arranged in the anode space for preventing penetration of the reactive gas into the region at the cathode.

Abstract: A method and apparatus for sputter deposition. The method including: providing a sputter target having a back surface and an exposed front surface; providing a source of magnetic field lines, the magnetic field lines extending through the sputter target from the back surface to the exposed front surface of the sputter target; providing one or more pole extenders between magnetic poles of the source of the magnetic field lines and the exposed front surface of the sputter target.

Abstract: A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit the ion beam. The aperture or outlet of the nozzle has a second width, which second width is less than the first width. An ionizable gas is introduced to the discharge cavity. At least one electrode connected to the AC power supply, alternatively serving as an anode or a cathode, is capable of supporting at least one magnetron discharge region within the discharge cavity when serving as a cathode electrode. A plurality of magnets generally facing one another, are disposed adjacent each discharge cavity to create a magnetic field null region within the discharge cavity.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm2 is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

Abstract: A magnetron sputtering apparatus has a controller for selectively releasing the spread of plasma on a substrate on a support. The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target surface during intervals between deposition of target material onto a desired substrate, such as a wafer, and ensures that layers or flakes of back-scattered deposited target material do not build up on the target itself. A platen coil is located between the magnetron and the support to increase both uniformity and density of target material arriving nearly normal to the substrate surface.

Abstract: Method for manufacturing magnetron sputter-coated workpieces includes placing a substrate adjacent a magnetron source having a target cathode, generating above the target cathode, at least one plasma loop by an electron trap established by generating a magnetic field which forms, in top view on the target cathode, a magnet field loop and, viewed in cross-section on the target cathode, a tunnel-shaped arc field and, an electric field which crosses the magnetic field of the magnet field loop. Plasma density distribution above the target cathode is controlled by interacting a control anode with the electron trap in a control segment area of the plasma loop. Magnetron sputter-coating the substrate by the magnetron sputter-source then takes place.

Abstract: A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.