Abstract: Systems and methods are disclosed for face target sputtering to fabricate semiconductors by providing one or more materials with differential coefficients of expansion in the FTS chamber; and generating a controlled pressure and size with the one or more materials during sintering.

Abstract: A physical vapor deposition device includes a chamber; a cathode and an opposite anode, a target material, and supporting device arranged in the chamber. The target material and the supporting device are positioned between the cathode and the anode. The supporting device includes a rotatable device and a hollow supporting plate. The hollow supporting plate is configured for securing the workpiece and exposing part of the workpiece where is needed to be coated. The hollow supporting plate is movably fastened to the rotatable device. A distance from the hollow supporting plate to the rotatable device can be adjusted when the hollow supporting plate is rotated together with the rotatable device in order to align workpiece with the target material.

Abstract: According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber.

Abstract: A sputter-coating apparatus for coating a plurality of workpieces includes a deposition case defining a cavity, a supporting assembly received in the cavity, and a target assembly received in the cavity and extending through the supporting assembly to face the workpieces. The supporting assembly includes a plurality of supporting members. Each supporting member includes a body and a plurality of adjusting units extending through the body. Each adjusting unit includes a supporting pole fixed to the body, a first fixing pole and a second fixing pole fixedly connected to the supporting pole and radially extending from the supporting pole, a first threaded pole and a second threaded pole retractably connected to the supporting pole and radially extending from the supporting pole, and a driving member received in the supporting pole for driving the first threaded pole and the second threaded pole to retract relative to the supporting pole.

Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

Abstract: An apparatus includes a chamber configured to form a reduced-pressure space, a carrier which holds a substrate, and a conveyer which conveys the carrier in the chamber. The chamber includes a side wall including an opening portion, and a partition wall arranged in the opening portion, the conveyer includes a permanent magnet provided on the carrier, and a driving magnet arranged outside the partition wall so as to drive the carrier, and the partition wall includes a first portion arranged between the driving magnet and a path through which the carrier passes, and a second portion arranged to connect the first portion to the side wall, the first portion having a smooth surface in a portion in which the first portion faces the path, and the first portion including a plurality of ribs arranged on a surface thereof on a side on which the driving magnet is arranged.

Abstract: A sputtering apparatus of a continuous system that a first target 17a and a second target 17b are arranged to obliquely face a substrate 6 and other targets to form a film while conveying the substrate 6 along a conveying path 15, wherein shields 19a, 19b facing the conveying direction of at least the substrate 6 are provided between the conveying path 15 and the first and second targets 17a, 17b to have therebetween an extended region toward the conveying path 15 in the space between the first target 17a and the second target 17b to enable to obtain a high quality film and to enable to prevent particles from diffusing in a chamber 3.

Abstract: The present invention provides a sputtering cathode whereby it is possible to increase the degree of freedom to adjust a distance between a target and a magnet unit. A sputtering cathode in accordance with one embodiment of the present invention includes a plurality of magnet units arranged at positions opposite to the rear surface of the target and a distance adjusting mechanism for separately adjusting a distance between the target and a magnet unit for each magnet unit. In addition, the sputtering cathode includes a reciprocating movement mechanism for reciprocating a plurality of magnet units in parallel to the rear surface of the target. The plurality of magnet units, the distance adjusting mechanism and the reciprocating movement mechanism may be housed in a magnet chamber that can be evacuated.

Abstract: An apparatus includes an arc chamber housing defining an arc chamber, and a feed system configured to feed a sputter target into the arc chamber. A method includes feeding a sputter target into an arc chamber defined by an arc chamber housing, and ionizing a portion of the sputter target.

Abstract: An apparatus for depositing seed layers over a substrate, which substrate includes a patterned insulating layer with at least one opening surrounded by a field, and which opening has sidewalls, bottom surfaces and top corners, includes: a CVD chamber adapted to deposit one or more CVD seed layers over the substrate; a PVD chamber adapted to deposit one or more PVD seed layers over the substrate; and a controller which includes recipe information. The recipe information includes deposition sequence and process parameters for operation of the deposition chambers.

Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

Abstract: Disclosed is a method for the low cost manufacturing a plurality of rigid sputtered magnetic media disks of one or more sizes from a rigid sheet, in which one or more initial steps of preparing the media are performed while the media is in sheet form. The individual disks are then removed from the sheet, and final processing is performed individually on the disks.

Abstract: A vacuum chamber system for semiconductor processing includes at least two evacuable vacuum chambers for receiving semiconductor elements to be processed, each including a vacuum chamber opening and a vacuum chamber sealing surface, and transfer aspects by which one of the vacuum chambers can be moved relative to another of the vacuum chambers and can be docked with it in a vacuum-tight manner by producing substantially parallel opposite positions of the vacuum chamber sealing surfaces which are subject to possible misalignments. At least one of the vacuum chambers has support aspects which support one vacuum chamber on the other vacuum chamber in the evacuated, docked state.

Abstract: In a vacuum coating installation to coat planar substrates, comprising a vacuum chamber and a transport device arranged in the vacuum chamber for transporting the substrates along a transportation path through the vacuum chamber, with the transport device comprising a multitude of transport rollers arranged successively along the transportation path, each transport roller is adapted to be mounted at least at two different positions, vertically distanced from each other. A carrier frame has a substrate accepting structure and a guiding rod arranged at the bottom of the carrier frame in the direction of transportation to create a friction connection with the transportation device, connected to the carrier frame at the connection points, with the guiding rod being connected at least at one connection point to the carrier frame such that a relative displacement is possible of the guiding rod relative to the carrier frame in the direction of transportation.

Abstract: A movable ground ring of a movable substrate support assembly is described. The movable ground ring is configured to fit around and provide an RF return path to a fixed ground ring of the movable substrate support assembly in an adjustable gap capacitively-coupled plasma processing chamber wherein a semiconductor substrate supported in the substrate support assembly undergoes plasma processing.

Abstract: A multi-chamber treatment/processing apparatus includes: a means for controlling/regulating operation of the apparatus providing the following operational sequence: performing a treatment/processing of at least one magnetic and/or magneto-optical disk in treatment/processing chambers, while each inlet gate and each outlet gate of each treatment/processing chamber is in a closed position and gas is exhausted from each buffer/isolation chamber; opening each of the inlet and outlet gates of each of the treatment/processing chambers and transporting the at least one magnetic and/or magneto-optical disk therein to the adjacent buffer/isolation chamber; closing the outlet gate of each of the treatment/processing chambers; transporting each of the magnetic and/or magneto-optical disk through a respective buffer/isolation chamber and initiating a flow of a respective gas to each treatment/processing chamber; and closing the inlet gate of each treatment/processing chamber immediately upon completion of entry of the at

Abstract: A chamber for physical vapour deposition is provided. The chamber includes a housing, a door for opening and closing the housing, and a bearing for receiving a target, wherein the bearing is oriented in a first direction. Further, the chamber is adapted so that the target is at least partially removable from the chamber in the first direction. According to an embodiment, a chamber for physical vapour deposition is provided. The chamber is adapted for receiving at least one target and a substrate. The chamber includes a housing, a door, and at least one bearing for mounting the target, wherein the bearing is attached to the door.

Abstract: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

Abstract: To provide a vacuum processing apparatus capable of supporting and conveying a substrate by a method suitable for a processing content in each processing step and capable of suppressing various mechanisms provided within a processing chamber from being adversely affected. More particularly, the CVD chamber of the apparatus is configured to be horizontal, and hence the above-mentioned problem can be solved. Further, by configuring a sputtering apparatus as the vertical type processing apparatus, problems with abnormal electrical discharge can be solved.

Abstract: A sputtering apparatus includes a chamber including a first sidewall and defining a number of evenly spaced first through holes on the first sidewall, a number of slide rails radially extending outwards from the first sidewall corresponding to each first through hole, a number of target holders defining at least two sputtering faces and slidably engaged with the slide rails, and a target material mounting on the sputtering faces. The target holder includes a shaft; the sputtering face capable of rotating about the shaft. The target holders are fastened to the first sidewall with one of the sputtering faces facing the first through hole, the sputtering face capable of being replaced by rotating about the shaft.

Abstract: A sputtering apparatus includes a susceptor having a substrate and a plurality of target devices facing the substrate and substantially parallel to each other, each target device being rotatable.

Abstract: Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

Abstract: The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode (802), a rotatable stage (801) and a rotatable shielding plate (805). The sputtering apparatus controls the rotation of at least one of the cathode (802), stage (801) and shielding plate (805) so that sputtered particles impinging at an angle formed with respect to a normal line of the substrate (804) of 0° or more and 50° or less out of sputtered particles generated from the target (803a) during sputtering are made to impinge on the substrate (804).

Abstract: A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like is suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.

Abstract: An arc deposition apparatus comprises an evacuatable chamber and means for positioning at least two targets in the chamber, wherein a first one of the at least two targets is positionable in an operative position and another of the at least two targets is positionable in a standby position. An electrical power supply is provided for supplying electrical power to the target held in the operative position to form an arc on an emission surface of the operative target. Means are provided for preparing an emission surface of the target positioned in the standby position to have a predetermined morphology. Alternatively, or in conjunction with the surface preparing means, means are provided for inspecting whether the emission surface of the target positioned in the standby position has a predetermined morphology. Preferably, the positioning means is configured to interchange the at least two targets at a predetermined time.

Abstract: A sputtering film forming method. which positions a target 4 and 5 at an incline to a surface of a substrate 10 whereupon a film is to be formed, and forms the film upon the surface of the substrate 10 whereupon the film is to be formed in an incline direction while the substrate 10 is rotated about a normal axis, terminates the forming of the film at a predetermined timing from the commencement of the forming of the film, wherein the forming of the film is terminated, when the substrate has rotated by 360 degrees×n+180 degrees+?, where n is a natural number, including 0, and ?10 degrees<?<10 degrees.

Abstract: The present invention is directed to methods for depositing doped and/or alloyed semiconductor layers, an apparatus suitable for the depositing, and products prepared therefrom.

Abstract: An arrangement for transporting a flat substrate through a coating installation, wherein the coating installation comprises, e.g., several and different sputter cathodes, to which the flat substrate, for example a glass pane, is transported one after the other in vacuo. So that no abrasion is generated between glass pane and contact, the glass pane is kept spaced apart from the contact by means of gas pressure. The gas pressure is herein built up through relatively few and small holes in a gas channel. Since during flooding of the coating installation to atmospheric pressure or during evacuation, due to the small holes, no fast pressure equalization between gas channel and the remaining coating installation is possible, the gas channel is decoupled in terms of gas from the remaining coating installation and provided with a separate gas line, via which gas can be introduced into the gas channel or pumped out of it.

Abstract: A method of forming a uniform thickness layer of a selected material on a surface of a substrate comprises steps of: (a) providing a multi-stage cathode sputtering apparatus comprising a group of spaced-apart cathode/target assemblies and a means for transporting at least one substrate/workpiece past each cathode/target assembly, each cathode/target assembly comprising a sputtering surface oriented substantially parallel to the first surface of the substrate during transport past the group of cathode/target assemblies, the group of cathode/target assemblies adapted for providing different angular sputtered film thickness profiles; and (b) transporting the substrate past each cathode/target assembly while providing different sputtered film thickness profiles from at least some of the cathode/target assemblies, such that a plurality of sub-layers is deposited on the surface of the substrate/workpiece which collectively form a uniform thickness layer of the selected material.

Abstract: An apparatus for manufacturing a magnetic recording disk includes a magnetic-film deposition chamber in which a magnetic film for a recording layer is deposited on a substrate; a lubricant-layer preparation chamber in which a lubricant layer is prepared on the substrate in vacuum; and a cleaning chamber in which the substrate is cleaned in vacuum after the magnetic-film deposition in the magnetic-film chamber and before the lubricant-layer preparation in the lubricant-layer chamber. The apparatus may further include a transfer system that transfers the substrate from the cleaning chamber to the lubricant-layer preparation chamber without exposing the substrate to the atmosphere.

Abstract: The invention relates to a sputtering cathode (1) for coating a substrate (6), which comprises a device (5) for generating an external magnetic field with substantially parallel magnetic field lines (8) substantially in the plane of the substrate. The invention further relates to a device and a method for coating a substrate with several layers, whereby several sputtering cathodes are disposed in a circle with their target effective areas pointing radially outward.

Abstract: The invention relates to a partially disposable substrate holder used in magnetic latches for securing substrates on a planetary rotating platform suspended above a coating source in a vacuum chamber of a vapor deposition system, e.g. a chemical vapor deposition (CVD) system or a physical vapor deposition (PVD) system. The substrate holder includes a reusable base formed, at least partially, from a ferro-magnetic material, which is attracted to the magnetic latch, and a disposable cover formed from a relatively inexpensive, ferromagnetic, easily formable material, which encourages adherence of coating material and has a low vapor pressure at coating temperatures.

Abstract: The invention relates to a magnetic latch for securing substrates on a planetary rotating platform suspended above a coating source in a vacuum chamber of a vapor deposition system, e.g. a chemical vapor deposition (CVD) system or a physical vapor deposition (PVD) system. The magnetic latch includes a permanent magnetic, which is moveable between a latching position, in which the permanent magnet magnetizes the latch for attracting a substrate holder, and an unlatching position, in which the permanent magnet is connected in a bypass circuit, thereby demagnetizing the latch for releasing the substrate holder.

Abstract: A method for treating/processing substrates/workpieces in a multi-chamber treatment/processing apparatus, comprising: providing a multi-chamber treatment/processing apparatus comprising at least a pair of operatively interconnected upstream and downstream treatment/processing chambers; providing each of the chambers with at least one substrate/workpiece; treating/processing the at least one substrate/workpiece positioned in each of the chambers; evacuating process gas from each of the chambers during or upon completion of the treating/processing of the at least one substrate/workpiece positioned therein; removing the at least one substrate/workpiece from the downstream treatment/processing chamber and initiating transport of the at least one substrate/workpiece from the upstream treatment/processing chamber to the downstream treatment/processing chamber, comprising initiating a flow of the process gas to the evacuated downstream treatment/processing chamber prior to completion of transport of the substrate

Abstract: An elongate vacuum system for coating one or both sides of a flat substrate which can be displaced by the system, comprises at least one magnetron provided with a magnetron surrounding area and is subdivided into successive compartments in the direction of transportation of the substrate by separating walls having closeable suction openings. The compartments can be evacuated either directly by a vacuum connection provided on the compartment or indirectly via a suction opening in the separating wall. At least one compartment comprises an upper partial compartment which is arranged above the substrate. The partial compartment comprises a closeable upper opening in at least one of the outer walls thereof. The aim is to produce an elongate coating system which is flexible to use according to the requirements of various one and two-sided coating processes and ensures a stable, differential and process-optimized sputter atmosphere.

Abstract: A method and device for magnetron sputtering are provided. A magnetron coating system includes a first coating source and an auxiliary substrate arranged between the first coating source and an area into which a substrate to be coated is to be received. The system also includes a magnetron having a cathode composed of the auxiliary substrate. Additionally, the system includes a device structured and arranged to determine an area density of the auxiliary substrate.

Abstract: In-line metallizer assemblies can include an external rotating actuator exchange that can be operable to exchange one or more parts between a conveyor system and a vacuum chamber, and an internal rotating actuator exchange within the vacuum chamber that can be operable to receive the one or more parts from the external rotating actuator exchange, transition the one or more parts to a sputter coater integrated with the vacuum chamber for metallizing, and return metallized one or more parts to the external rotating actuator exchange such that the external rotating actuator exchange can return the metallized one or more parts to the conveyor system.

Abstract: Methods and coaters for applying films onto a substrate (e.g., a large-area glass substrate) are disclosed. Certain embodiments involve a coater for applying thin films onto a sheet-like substrate. The coater in some embodiments has a transport system adapted for conveying the substrate along a path of substrate travel extending through the coater. The substrate transport system in certain embodiments includes an upward coating deposition gap. The coater preferably has a source of coating material adapted for delivering coating material upwardly through such gap and onto a bottom major surface of the substrate as the substrate is conveyed along a desired portion of the path of substrate travel, which portion of the path of substrate travel extends over the upward coating deposition gap.

Abstract: An apparatus for sputter depositing a transparent conductive oxide (TCO) layer are provided in the present invention. The transparent conductive oxide layer may be utilized as a contact layer on a substrate or a back reflector in a photovoltaic device. In one embodiment, the apparatus includes a processing chamber having an interior processing region, a substrate carrier system disposed in the interior processing region, the substrate carrier system having a plurality of rollers for conveying a substrate through the interior processing region, and an insulating member electrically isolating the rollers from the processing chamber.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. Preferably, the coater includes at least one coating apparatus (e.g., which is adapted for delivering coating material) on each of two sides of the path of substrate travel.

Abstract: The present invention refers to a method of operating a coating chamber as well as a coating chamber comprising a coating source, a transport device for moving a substrate carrier adapted to be able to carry a substrate to be coated into at least one coating position with respect to the coating source, so that the substrate may be coated, and at least one first shield being arranged in an area between the coating position of the substrate and the coating source to prevent coating of areas other than the surface of the substrate to be coated, wherein the first shield comprises a moving apparatus and a coupling device for coupling the first shield and the substrate carrier, so that first shield and substrate carrier are movable together.

Abstract: A continuous coating installation is disclosed. The installation includes a vacuum chamber having a supply opening for supplying a substrate to be coated and a discharge opening for discharging the coated substrate. The installation also includes a physical vapour deposition device for coating a surface of the substrate, and a laser crystallization system for simultaneously illuminating at least one sub-partial area of a currently coated partial area of the surface of the substrate with at least one laser beam. The installation further includes a transport device for transporting the substrate in a feedthrough direction from the supply opening to the discharge opening and for continuously or discontinuously moving the substrate during the coating thereof in the feedthrough direction.

Abstract: Disclosed is an apparatus and process within a pass-by sputtering chamber, in which standard cathodes and two or more specially-sized cathodes within the sputtering chamber, mounted colinear with the direction of travel of substrates within the sputtering chamber, enabling performance of rapid adjustment of material deposited on a substrate.

Abstract: Deposition apparatus for uniformly forming material on a substrate in accordance with an exemplary embodiment is provided. The deposition apparatus includes an energy source, an electrode in a facing, spaced relationship with respect to the substrate, and interface structure joined to the electrode. The interface structure is configured to electrically couple energy from the energy source through and about the interface structure to the electrode for formation of a substantially uniform electric field between the electrode and a predetermined area of the substrate when the interface structure is supplied with energy from the energy source.

Abstract: A method of producing substrates with functional layers which have high optical properties and/or a high surface smoothness, in particular a low turbidity and significantly lower roughness, is provided. The method includes a sputtering process for coating a substrate with at least one functional layer, the sputtering process being interrupted at least once by the application of an intermediate layer with a thickness of less than 20 nm.

Abstract: Embodiments of the present invention relate to apparatuses and methods for fabricating electrochemical cells. One embodiment of the present invention comprises a single chamber configurable to deposit different materials on a substrate spooled between two reels. In one embodiment, the substrate is moved in the same direction around the reels, with conditions within the chamber periodically changed to result in the continuous build-up of deposited material over time. Another embodiment employs alternating a direction of movement of the substrate around the reels, with conditions in the chamber differing with each change in direction to result in the sequential build-up of deposited material over time. The chamber is equipped with different sources of energy and materials to allow the deposition of the different layers of the electrochemical cell.

Abstract: A deposition system includes a process chamber, a workpiece holder for holding the workpiece within the process chamber, a first target comprising a first material, a second target comprising a second material, a single magnet assembly disposed that can scan across the first target and the second target to deposit the first material and the second material on the workpiece, and a transport mechanism that can cause relative movement between the magnet assembly and the first target or the second target.

Abstract: An operating method is disclosed for a processing system that comprises multiple process modules each adapted to perform substantially the same process upon a substrate. During process module conditioning as a preparatory step for executing a required process recipe, each time one process module completes conditioning, successive transfer of unprocessed substrates from a cassette to the process module is started on an associated substrate transfer route, and successive processes that use the process module are started for the unprocessed substrates. The processing system can be operated efficiently, even if the nonuniformity of the conditioning time required exists between process modules of the same specifications.

Abstract: A highly reflective layer system for coating substrates with reflection-enhancing layers, a method for producing the layer system and a device for carrying out the method are provided. On the surface of the substrate, a first functional reflection layer is applied. The first functional reflection layer may be reflective or partially reflective and comprise of metal or a metal alloy which contains one of more constituents from the group comprising copper, nickel, aluminum, titanium, molybdenum and tin. Provided there over is a second functional reflection layer. The second functional reflection later may comprise metal or a metal alloy, for example silver or a silver alloy. Over the second functional reflective layer there follows a first transparent dielectric layer. The first transparent dielectric layer may comprise, for example, silicon oxide. Arranged over the first transparent dielectric layer is a second transparent dielectric layer. This may consist, for example, of titanium oxide.

Abstract: A sputter coating system comprises a vacuum chamber, means for generating a vacuum in the vacuum chamber, a gas feed system attached to the vacuum chamber, a gas plasma forming system attached to the vacuum chamber, a system for confining and guiding a gas plasma within the vacuum chamber, and a prism-shaped sputter target assembly, with the material to be sputtered forming at least the outer surface of the target assembly and positioned such that the outer surface is surrounded by the plasma within the vacuum chamber. A negative polarity voltage is applied to the surface of the material such that sputtering occurs.