Abstract: The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, using an indirect external influence, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion, thus causing greater plating of the cavity portion relative to the top portion.

Abstract: A cobalt-iron alloy film having saturation magnetization of at least about 2.30 Telsa. The film alloy includes about 55 wt % to about 75 wt. % iron and the remainder cobalt. The film is made by a process in which the film is electrodeposited from an aqueous medium which includes one or more ferrous salts, one or more cobaltous salts, a buffer having a pKa of about 6 to about 8, at least one carboxylic acid having a pKa of between about 3.5 and about 5.5, an aromatic sulfinic acid or its salt and optionally, a halide salt and/or a surfactant. The alloy film is useful as a write head in magnetic recording.

Abstract: In a method for manufacture of prosthetic moulded parts for the dental sector with the aid of galvanic metal deposition, deposition at least partly takes place by pulse current. Deposition is preferably ended in a period of less than 5 hours, particularly within 1 to 2 hours. Deposition preferably takes place in the method of a precious metal or precious metal alloy, particularly gold or a gold alloy. Aqueous gold sulphite baths are more particularly used.

Abstract: Methods for the preparation of long, dimensionally uniform, metallic nanowires that are removable from the surface on which they are synthesized. The methods include the selective electrodeposition of metal nanowires at step edges present on a stepped surface, such as graphite, from an aqueous solution containing a metal or metal oxide. Where a metal oxide is first deposited, the metal oxide nanowires are reduced via a gas phase reduction at elevated temperatures to metal nanowires. Alternatively, beaded or hybrid nanowires comprising a metal A into which nanoparticles of a metal B have been inserted may be prepared by first electrodepositing nanoparticles of metal B selectively along step edges of a stepped surface, capping these nanoparticles with a molecular layer of an organic ligand, selectivley electrodepositing nanowire segments of metal A between nanoparticles of metal B and then heating the surface of the hybrid nanowire under reducing conditions to remove the ligand layer.

Abstract: A method of electrochemically filling features on a wafer surface to form a substantially planar copper layer is provided. The features to be filled includes a first feature that is an unfilled feature with the smallest width and a second feature having the next larger width after the smallest feature. The first and the second features are less than 10 micrometers in width. The method comprises applying a first cathodic current to form a first copper layer on the wafer surface. The first copper layer has a planar portion over a first feature and a non-planar portion over a second feature. After a surface of the first copper layer is treated by applying a first pulsed current, a second cathodic current is applied to form a second copper layer on the first copper layer. The second copper layer has a planar portion over both the first and second features.

Abstract: This invention relates to a method of anodising magnesium material which includes anodising the magnesium while it is immersed in an aqueous electrolyte solution having a pH above 7, and in the presence of a phosphate, the electrolyte solution also containing a sequestering agent. The method may further include the provision of a plasma suppressing substance within the electrolyte solution. Furthermore, the electrolyte solution may also preferably include a tertiary amine such a TEA, and the current passed through the electrolyte solution may preferably be a straight DC current.

Abstract: Disclosed is a method of electroplating a Ni—Fe—P alloy using a sulfamate solution and, in particular, a method of electroplating a Ni—Fe—P alloy using a plating solution containing nickel sulfamate, iron sulfamate, phosphorous acid, and a buffer agent. The method is advantageous in that a residual stress of a deposited layer is very low and has stable mechanical properties, and excellent thermal and corrosion resistance because the deposited layer is obtained by electroplating the Ni—Fe—P alloy using the sulfamate solution useful in a high rate plating process. Furthermore, the method can be applied to various parent metals such as stainless steel, Inconel and iron alloys, and to various fields because the chemical compositions of the deposited layer are readily controlled by varying the concentration of the plating solution.

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A method and apparatus for electrochemically depositing a metal into a high aspect ratio structure on a substrate are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a first conductive material disposed thereon in a processing chamber containing an electrochemical bath, depositing a second conductive material on the first conductive material as the conductive material is contacted with the electrochemical bath by applying a plating bias to the substrate while immersing the substrate into the electrochemical bath, and depositing a third conductive material in situ on the second conductive material by an electrochemical deposition technique to fill the feature. The bias may include a charge density between about 20 mA*sec/cm2 and about 160 mA*sec/cm2. The electrochemical deposition technique may include a pulse modulation technique.

Abstract: A relatively simple and inexpensive process for plating precious alloyed metals, such as AuSn, AuSnIn, AgSn, AuIn and AgIn. Anodes are formed from each of the metal components in the alloy and disposed in a conducting solution. The mass of each metal components is determined by Faraday's law. The target is also disposed in the conducting solution. Plating current is independently applied to each anode. The plating is conducted under an ultraviolet light sources to optimize the process. The plating alloys can be used for various purposes including attaching a semiconductor die to a substrate. Since the process does not involve exposure of the semiconductor die to a relatively high temperature for a relatively long time, the process does not pose a risk of contamination of the semiconductor by the adhesive or wax used to hold the die in place on the carrier during processing.

Abstract: Disclosed herein are a biaxially textured pure metal or alloy layer deposited by electroplating process on the surface of a single-crystalline or quasi-single-crystalline metal substrate, and a method for manufacturing the biaxially textured pure metal or alloy layer. Specifically, the biaxially textured pure metal or alloy layer is deposited by electroplating process on the surface of a pure metal or alloy substrate having single-crystalline or quasi-single-crystalline orientation. The biaxially textured pure metal or alloy layer has a misorientation on the c-axis of 4° or less and a misorientation on the plane formed by the a-axis and b-axis of 5.2° or less in which the misorientation on the c-axis is determined by a Full Width at Half Maximum of peaks on the &thgr;-rocking curve and the misorientation on the plane formed by the a-axis and b-axis is determined by a Full Width at Half Maximum of peaks on the &PHgr;-scan.

Abstract: The present invention relates to a method and an apparatus for depositing a metal layer on a semiconductor structure. A semiconductor structure comprising at least one recess and at least one elevation is provided. The semiconductor structure is electroplated for depositing a layer of metal and for filling at least one recess with metal. The semiconductor structure is electropolished for preferentially removing the metal from at least one elevation, and chemical mechanical polishing is performed to remove a surplus of the metal from at least one elevation and for planarizing a surface of the semiconductor structure. The present invention advantageously allows the reduction of the demands on the chemical mechanical polishing process.

Abstract: An electrochemical processing method is provided for forming a current carrying device for semiconductor chip packaging and similar applications. The method comprises selecting sections of a substrate to carry current wherein a selected section is at least partly covered with a voltage switchable dielectric material, rendering the voltage switchable dielectric material conductive, and electrochemically forming a current carrying material directly on the voltage switchable dielectric material. The voltage switchable dielectric material can have a characteristic voltage, such that when a voltage having a magnitude exceeding the characteristic voltage is applied to the voltage switchable dielectric material, the voltage switchable dielectric material switches from a dielectric material to a conductive material. When conductive, the voltage switchable dielectric material is amenable to electrochemical processing such as electroplating.

Abstract: A method is disclosed for electrolytically forming conductor structures from highly pure copper on surfaces of semiconductor substrates, which surfaces are provided with recesses, when producing integrated circuits. The method includes the steps of coating the surfaces of the semiconductor substrates with a full-surface basic metal layer in order to achieve sufficient conductance for the electrolytic depositions, depositing full-surface deposition of copper layers of uniform layer thickness on the basic metal layer by an electrolytic metal deposition method, and structuring the copper layer.

Abstract: Electroplating methods using an electroplating bath containing metal ions and a suppressor additive, an accelerator additive, and a leveler additive, together with controlling the current density applied to a substrate, avoid defects in plated films on substrates having features with a range of aspect ratios, while providing good filling and thickness distribution. The methods include, in succession, applying DC cathodic current densities optimized to form a conformal thin film on a seed layer, to provide bottom-up filling, preferentially on features having the largest aspect ratios, and to provide conformal plating of all features and adjacent field regions. Including a leveling agent in the electroplating bath produces films with better quality after subsequent processing.

Abstract: The present invention relates to a to-be-mounted electronic component to which functional alloy plating using a bonding material for mounting is applied with a substitute bonding material for solder (tin-lead alloy), and aims at providing alloy plating which has been put to a practical use in such a way that the function of existing alloy plating of this type has been significantly improved to eliminate toxic plating from various kinds of electronic components for use in electronic devices so that it is useful in protecting the environment. Functional alloy plating using substitute bonding material for Pb and electronic component to be mounted to which the functional alloy plating is applied, characterized in that with Sn (tin) as a base, one of Bi (bismuth), Ag (silver) and Cu (copper) is selected, a Bi content to the Sn is set to 1.0% or less, the Bi content to the Sn is set to 2.0 to 10.0%, an Ag content to the Sn is set to 1.0 to 3.0%, the Ag content to the Sn is set to 3.0 to 5.

Abstract: A method for forming a plated magnetic thin film of high saturation magnetization and low coercivity having the general form Co100−a−bFeaMb, where M can be Mo, Cr, W, Ni or Rh, which is suitable for use in magnetic recording heads that write on narrow trackwidth, high coercivity media. The plating method includes four current application processes: direct current, pulsed current, pulse reversed current and conditioned pulse reversed current.

Abstract: Several advantages result from the incorporation of nanoparticulates into the plating bath when electrodepositing metal composite microstructures or metal alloy composite microstructures. Adding even relatively small quantities of nanoparticulates can enhance the rate of alloy deposition, cause the deposition of smoother structures, and produce composites having superior properties as compared to otherwise similar alloys lacking the particulates—for example, composites having greater hardness. These techniques are useful for plating composites into deep recesses of a microstructure.

Abstract: An object of the present invention is to provide a plating method which can form defect-free, completely-embedded interconnects of a conductive material in recesses in the surface of a substrate even when the recesses are of a high aspect ratio, and which can improve the flatness of a plated film on the substrate even when narrow trenches and broad trenches are co-present in the surface of the substrate. A plating method according to the present invention includes: providing a high resistance structure between a surface of a substrate, said surface being connected to a cathode electrode, and an anode electrode; filling the space between the substrate and the anode electrode with a plating solution while applying a voltage between the cathode electrode and the anode electrode; and growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value.

Abstract: A method is described for catalyst-induced growth of carbon nanotubes, nanofibers, and other nanostructures on the tips of nanowires, cantilevers, conductive micro/nanometer structures, wafers and the like. The method can be used for production of carbon nanotube-anchored cantilevers that can significantly improve the performance of scaning probe microscopy (AFM, EFM etc). The invention can also be used in many other processes of micro and/or nanofabrication with carbon nanotubes/fibers. Key elements of this invention include: (1) Proper selection of a metal catalyst and programmable pulsed electrolytic deposition of the desired specific catalyst precisely at the tip of a substrate, (2) Catalyst-induced growth of carbon nanotubes/fibers at the catalyst-deposited tips, (3) Control of carbon nanotube/fiber growth pattern by manipulation of tip shape and growth conditions, and (4) Automation for mass production.

Abstract: A method for producing a catalytic converter includes depositing a layer of catalytically active metallic material by electrochemical deposition on a planar substrate by immersing the substrate in an electrolyte that contains the catalytically active metallic material. A high overvoltage at which a large number of seeds of the metallic material are formed on the substrate is set for a predetermined first time period between the substrate and the opposing electrode. The overvoltage is reduced for a predetermined second time period to a value at which the seeds which are deposited in the first time period grow on the substrate.

Abstract: A method and apparatus for electrochemically depositing a metal onto a substrate. The apparatus generally includes a head assembly having a cathode and a wafer holder disposed above the cathode. The apparatus further includes a process kit disposed below the head assembly, the process kit including an electrolyte container configured to receive and maintain a fluid electrolyte therein, and an anode disposed in the electrolyte container. The apparatus further includes a power supply in electrical communication with the cathode and the anode, the power supply being configured to provide a varying amplitude electrical signal to the anode and cathode.

Abstract: A method of forming a copper layer with increased electromigration resistance. A doped copper layer is formed by controlling the incorporation of a non-metallic dopant during copper electroplating.

Abstract: The invention aims to achieve effective recovery of metals from process solutions and effluents by means of pulsating cathode currents, preferably with coupled anodic processes.

Abstract: A method and apparatus for electro-chemically depositing a metal onto a substrate. The apparatus generally includes a head assembly having a cathode and a wafer holder disposed above the cathode. The apparatus further includes a process kit disposed below the head assembly, the process kit including an electrolyte container configured to receive and maintain a fluid electrolyte therein, and an anode disposed in the electrolyte container. The apparatus further includes a power supply in electrical communication with the cathode and the anode, the power supply being configured to provide a varying amplitude electrical signal to the anode and cathode.

Abstract: The present invention provides methods and systems for the electrolytic removal of platinum and/or other of the Group 8-11 metals from substrates.

Abstract: A process for electrodepositing a low stress nickel-manganese multilayer alloy on an electrically conductive substrate is provided. The process includes the steps of immersing the substrate in an electrodeposition solution containing a nickel salt and a manganese salt and repeatedly passing an electric current through an immersed surface of the substrate. The electric current is alternately pulsed for predetermined durations between a first electrical current that is effective to electrodeposit nickel and a second electrical current that is effective to electrodeposit nickel and manganese. A multilayered alloy having adjacent layers of nickel and a nickel-manganese alloy on the immersed surface of the substrate is thereby produced. The resulting multilayered alloy exhibits low internal stress, high strength and ductility, and high strength retention upon exposure to heat.

Abstract: A tin-silver alloy plating film improved in solderability and flex cracking characteristics is provided by producing it by an electroplating process which uses a current having a pulse waveform of a current passing period of not less than 3 ms and not more than 500 ms and a stopping period of not less than 1 ms and not more than 500 ms with a proviso that the stopping period is equal to or shorter than the passing period.

Abstract: To provide a method of metal plating to give a metal plating coating with excellent luster and high corrosion resistance and wear resistance. This metal plating method includes pulse plating by pulsed electrolysis by periodically applying electric current. The pulsed electrolysis is carried out in condition that the pulse frequency and the current density are controlled so that the ratio of the quantity of deposited lattice per pulse to the height of the lattice is 0.28 or lower, that the duty ratio of the pulse frequency is controlled to be 0.5 or lower, and that the duration of complete pause caused by distortion of pulse waveform is controlled to be one half or longer of the duration of current interruption. The foregoing plating is carried out while fluidizing plating solution to be brought into contact with the object body 5 at a flow rate of 0.04 (m/s) or higher and making the solution evenly flow along the face to be plated.

Abstract: Embodiments of the invention generally provide a waveform to be applied to a seed layer prior to initiating plating operations, wherein the waveform is configured to remove organic contaminants from the seed layer. The application of the waveform generally includes applying a plurality of anodic pulses to the seed layer prior to an electrochemical deposition process and subsequent to the seed layer contacting a plating solution, and applying a cathodic pulse to the seed layer immediately following each of the plurality of anodic pulses. The waveform is generally provided by a power supply in electrical communication with a system controller configured to supply controlling signals to the power supply.

Abstract: It is known to apply a pulse current during electrodeposition of nickel. In the invention, pulse current waveforms have ramp-down spikes leading to improvements in surface finishes of electroforms created by the process.

Abstract: Object The present invention relates to a to-be-mounted electronic component to which functional alloy plating using a bonding material for mounting is applied with a substitute bonding material for solder (tin-lead alloy), and aims at providing alloy plating which has been put to a practical use in such a way that the function of existing alloy plating of this type has been significantly improved to eliminate toxic plating from various kinds of electronic components for use in electronic devices so that it is useful in protecting the environment.

Abstract: Methods for anodizing sintered valve metal anodes for use in wet electrolytic capacitors implemented in implantable medical devices (IMDs). The methods generally include immersing a pressed valve metal anode in an anodizing electrolyte and developing an anode-electrolyte system. Subsequently, subjecting the anode-electrolyte system to a potential that is ramped up to a target voltage in a pulsed fashion and delivering voltage potential pulses to the anode. The pulses are preferably decreased in pulse width as the potential increases. The pulse width of the applied pulses is preferably defined by means of a duty, such that the applied pulse duty cycle is substantially 100% initially and declines over the formation time as the formation voltage increases to the target potential to substantially 1.0% or less. The pulses are preferably applied for a hold time following achievement of the target formation potential, as the pulse current declines toward zero current flow.

Abstract: In the NiFe electroplating method of the present invention, the atomic percent (at. %) composition of Ni and Fe in NiFe electroplated material is controlled by selection of the duty cycle of the electroplating current during the electroplating process. Generally, for a particular electroplating bath, where the electroplating current duty cycle is greatest the NiFe electroplated material has a higher Fe at. %, and where the electroplating current duty cycle is reduced, a lower Fe at. %. Therefore, electroplated NiFe components from a single electroplating bath can have differing NiFe concentrations where the electroplating current duty cycle is altered. Additionally, NiFe components can be electroplated with a graduated or changing Ni and Fe concentration by altering the electroplating current duty cycle during the electroplating process.

Abstract: An electrodeposition process for producing a layered composite material and the layered composite material produced by the process. The layered composite material includes at least one layer of a first alloy species of an alloy and at least one layer of a second alloy species of the alloy. The first alloy species and the second alloy species have distinguishable properties. The process includes the steps of first energizing an electroplating circuit to provide a first electroplating current to deposit a layer of the first alloy species and second energizing the electroplating circuit to provide a second electroplating current to deposit a layer of the second alloy species. The alloy is preferably a gold-tin alloy, the first alloy species is preferably the Au5Sn alloy phase and the second alloy species is preferably the AuSn alloy phase.

Abstract: The invention relates to a method for combinatorially producing a library of materials by means of an electrochemical deposition in an array. The inventive library is made from an array of containers that consist of an electroconductive material, are open to the top and are electroconductively connected to a shared current supply device and is made from a corresponding array of auxiliary electrodes that are electroconductively connected to a shared current supply device and are arranged in such a way that an auxiliary electrode plunges into a container respectively or can be introduced therein without touching said container. The inventive method comprises the following steps: filling the containers with electrolytes having different compositions and containing electrolytically separable elements and applying an electric voltage between the current supply devices of the containers and auxiliary electrodes for obtaining an electrolytic deposition on the surfaces of the containers.

Abstract: A copper plating method for a via hole formed on a multi-layer substrate is provided. The via hole interconnects conductive layers of the multi-layer substrate. The method includes performing chemical copper plating on an inner wall of the via hole and performing electrolytic copper plating on the inner wall of the via hole, on which the chemical copper plating has been performed. The electrolytic copper plating includes a first stage and second stage. The first stage is performed with a current density equal to or less than 1.5 A/dm2 to deposit copper film having a thickness of 1 &mgr;m or more. The second stage is performed at a current density higher than that in the first stage.

Abstract: A composite material includes a structural carrier layer and a relatively thin metal foil layer separated by a release layer. The release layer, that may be an admixture of a metal such as nickel or chromium and a non-metal such as chromium oxide, nickel oxide, chromium phosphate or nickel phosphate, provides a release force for the metal foil layer from the carrier strip that is typically on the order of 0.1 pound per inch to 2 pounds per inch. This provides sufficient adhesion to prevent premature separation of the metal foil layer from the carrier layer, but easy removal of the carrier layer when desired. The metal foil layer may be electrolytically formed copper having a low height profile, on the order of 0.5 micron to 2.7 microns, bond strength enhancing agent coating a side of the metal foil layer. The enhanced surface is subsequently bonded to a dielectric and the carrier layer then removed.

Abstract: A method of coating a metal surface, particularly an inner surface of a gun barrel, with a chromium layer, includes the following steps: electrolytically precipitating on the metal surface a plurality of partial chromium layers in a superposed relationship by electric current pulses equaling the number of the partial chromium layers; and selecting the duration of each pulse such that a crystallite growth of individual partial chromium layers is stopped prior to a natural termination thereof for obtaining a globular polytropic structure of the entire chromium layer.

Abstract: Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

Abstract: Microscopic mechanical elements suitable for manufacture of microelectromechanical systems (MEMS) are directly prepared by forming a low-relief base of microscopic dimensions on a substrate surface by any conventional means, and electrodepositing a metal preferentially on the upper surface of the base to produce a vertically-extending 3-dimensional structure. In a first step, the patterned substrate and a counterelectrode are contacted with an electrolyte and an electric current is passed between the substrate and counterelectrode, with the substrate being predominantly cathodic with respect the counterelectrode.

Abstract: A method for forming a nanolaminate structure is provided which comprises plating a substrate with layers of substantially a first metal and substantially a second metal using an electrolytic plating process and controlling the plating current to obtain a desired current density at the cathode, which is maintained within a predefined range.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion and causing greater plating of the cavity portion relative to the top portion.

Abstract: A method for forming a plated magnetic thin film of high saturation magnetization and low coercivity having the general form Co100-a-bFeaMb, where M can be Mo, Cr, W, Ni or Rh, which is suitable for use in magnetic recording heads that write on narrow trackwidth, high coercivity media. The plating method includes four current application processes: direct current, pulsed current, pulse reversed current and conditioned pulse reversed current.

Abstract: An apparatus for producing orthohydrogen and/or parahydrogen. The apparatus includes a container holding water and at least one pair of closely-spaced electrodes arranged within the container and submerged in the water. A first power supply provides a particular first pulsed signal to the electrodes. A coil may also be arranged within the container and submerged in the water if the production of parahydrogen is also required. A second power supply provides a second pulsed signal to the coil through a switch to apply energy to the water. When the second power supply is disconnected from the coil by the switch and only the electrodes receive a pulsed signal, then orthohydrogen can be produced. When the second power supply is connected to the coil and both the electrodes and coil receive pulsed signals, then the first and second pulsed signals can be controlled to produce parahydrogen.

Abstract: It is known to apply pulse current during electrodeposition of nickel. In the processes described herein, pulse current waveforms have ramp-down spikes leading to improvements in surface finishes of electroforms created by the processes.

Abstract: Textured surfaces comprised of peaks which have been electrochemically deposited on a substrate are prepared using a pulsed direct current process. Typical substrates are machine components such as a machine roll. Improved textured surfaces are made according to the invention by controlling the density, uniformity and size of the peaks using a pulsed direct current process. Accordingly, the peak characteristics are predetermined by selecting a pulse wave form having specific current density and pulse interval parameters as well as a total deposition time which will deposit peaks having desired characteristics on the substrate.

Abstract: The present invention relates to a to-be-mounted electronic component to which functional alloy plating using a bonding material for mounting is applied with a substitute bonding material for solder (tin-lead alloy), and aims at providing alloy plating which has been put to a practical use in such a way that the function of existing alloy plating of this type has been significantly improved to eliminate toxic plating from various kinds of electronic components for use in electronic devices so that it is useful in protecting the environment.

Abstract: To avoid the formation of undesirable plating on electric supply rollers, there is provided a continuous plating apparatus in which a planar article to be plated is vertically clamped on both sides by electric supply rollers and the article to be plated is moved horizontally in a plating bath by the rotation of the electric supply rollers to plate both surfaces of the article to be plated. The apparatus is characterized in that the electric supply rollers are divided into conductive segments and non-conductive segments in the circumferential direction, with only the conductive segment which is in contact with the article to be plated being negatively charged, and other conductive segments which are at a distance from the article being positively charged.

Abstract: A method is provided for the preparation of nanoscale particle arrays having highly uniform crystals of metal, semiconductor or insulator materials grown in nanopores in the surface of a substrate, wherein the method uses pulse-reverse electrodeposition of metals with a rectangular or square waveform in order to generate high homogeneity of crystals and high in-plane or out-of-plane anisotropy in a controlled manner, enabling the creation of a variety of devices, including but not limited to high density storage media.