Abstract: A method for electroplating a strip of foam having two opposite sides and an electrically conductive surface, including: (a) continuously applying the strip of foam onto a moving cathode immersed in an electroplating bath so that the strip travels through the bath in contact with the moving cathode to electroplate metal on the strip of foam, a first side of the strip of foam facing a working surface of the moving cathode, and (b) continuously removing the electroplated strip of foam from the moving cathode when metal has been plated to a desired thickness; A metal foil is continuously formed by electrodeposition on the working surface of the moving cathode in such a way that the strip of foam is applied at step (a) onto the moving cathode over the metal foil; and, after step (b), the metal foil is continuously removed from the moving cathode.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper, that preferentially contacts the top surface of the workpiece, relative movement between the workpiece and the workpiece-surface-influencing device is established so that an additive in the electrolyte solution disposed on the workpiece and which is adsorbed onto the top surface is removed or otherwise its amount or concentration changed with respect to the additive on the cavity surface of the workpiece. Plating of the conductive material can place prior to, during and after usage of the workpiece-surface-influencing device, particularly after the workpiece surface influencing device no longer contacts any portion of the top surface of the workpiece, to achieve desirable semiconductor structures.

Abstract: The present invention relates to a copper electroplating bath composition and method of using it for microelectronic device fabrication. In particular, the present invention relates to copper electroplating in the fabrication of interconnect structures in semiconductor devices. By use of the inventive copper electroplating bath composition, the incidence of voids in the interconnect structures is reduced.

Abstract: A process for forming an interface (106) between a plated and a non-plated area (102, 104) on the surface of a plastic component (100) is disclosed. First, an anti-plating layer (110) is formed over the surface of the plastic component. Thereafter, a low-power laser beam (10) is used to remove a portion of the anti-plating layer and to form an interface between the plated area and the non-plated area. A seeding layer (120) is formed on the plated area so that the plated area is electrically conductive. Finally, a metallic layer (130) is electrically plated over the seeding layer. The metallic layer connects with the anti-plating layer via the interface. The cost of producing the anti-plating layer is low. Moreover, since the laser etching operation is able to produce a high-quality interface boundary between the plated and the non-plated area, yield of the process is improved.

Abstract: The invention is related to a method of plating of a metal layer on a substrate. The method is particularly preferred for the formation of metallization structures for integrated circuits.

Abstract: The invention provides for a back-end metallisation process in which a recess is filled with copper and which includes the step of forming a plating base on the surfaces of the recess for the subsequent galvanic deposition of the said copper, and wherein subsequent to the formation of the plating base, but prior to the galvanic deposition of the copper, a modifying agent is introduced to the recess and which serves to absorb in the surface regions not covered by the plating base and to thereby modify the surface to promote copper growth thereon so as to effectively repair the initial plating base before the copper plating fill commences.

Abstract: A method for forming electroplating cathode contacts around the periphery of a semiconductor wafer including forming an insulating layer over a conductive layer extending at least around the periphery of a semiconductor wafer substrate; etching a plurality of openings around a peripheral portion of the semiconductor wafer substrate through the insulating layer to extend through a thickness of the insulating layer in closed communication with the conductive layer said conductive area in electrical communication with a central portion of the semiconductor wafer substrate; filling the plurality of openings with metal to form electrically conductive pathways; planarizing the electrically conductive pathway surfaces; and, forming a metal layer over the electrically conductive pathway surfaces to form a plurality of contact pads for contacting a cathode for carrying out an electroplating process.

Abstract: A method for creating a material library of surface areas having different properties in which a substrate is coated. The substrate is subjected to a combined pretreatment procedure.

Abstract: The present invention provides a method of improving surface mobility of a metal seed layer on a wafer before electroplating comprising applying a solvent to a surface of the metal seed layer.

Abstract: A combined adhesion promotion method of a metal to a non-conductive substrate and directly metallizing the non-conductive substrate with the metal. The method involves texturing a non-conductive substrate with a cobalt etch followed by applying a sulfide to the textured non-conductive substrate to provide an electrically conductive surface on the non-conductive substrate. After the surface of the non-conductive substrate has been made electrically conductive, the surface of the non-conductive substrate can be directly metallized. The method reduces the number of process steps for direct metallization of a non-conductive substrate. Thus, the method is more efficient in contrast to conventional methods of metallizing a non-conductive substrate.

Abstract: A method for plating a titanium-containing metal, comprising the steps of: (a) surface treating the titanium-containing metal in a solution consisting essentially of an aqueous solvent and hydrochloric acid for a period of time sufficient to activate the surface of the titanium-containing metal; (b) plating the surface of the surface treated titanium-containing metal with a metallic coating in an electrolyte bath; and (c) non-oxidatively heat treating the struck titanium-containing metal for a period of time sufficient to cause diffusion bonding between the metallic coating and the titanium-containing metal. The present invention also provides parts made in accordance with the methods disclosed herein.

Abstract: To control peel strength at an organic release interface between a carrier foil and a copper-microparticle layer which constitute an electrodeposited copper foil with carrier. In the present invention, (1) a barrier copper layer is formed on the release interface layer and copper microparticles are formed on the barrier layer; (2) the anti-corrosion treatment is carried out by use of a plating bath containing a single metallic component or a plurality of metallic components for forming an alloy, the plating bath(s) having a deposition potential less negative than −900 mV (vs. AgCl/Ag reference electrode); and (3) methods (1) and (2) are combined.

Abstract: A cooper or copper alloy electrical contact member is treated by electroplating a barrier layer on a contact surface of the member, the barrier layer having a thickness ranging from about 0.00001 inch to about 0.0001 inch, and the barrier layer is selected from the group consisting of cobalt, cobalt-nickel alloys, cobalt-tungsten alloys, cobalt-nickel-tungsten alloys, and rhodium. An outer finish layer is coated over the barrier layer, and the finish layer is selected from the group consisting of tin, gold, palladium, platinum, silver, and alloys thereof, so that the electrical contact resistance of the treated contact member does not exceed about 10 milliohms at 100 grams contact force over a period of at least 1000 hours, and at a temperature of at least 150 degrees C.

Abstract: A method of plating for filling via holes, in which each via hole is formed in an insulation layer covering a substrate so as to expose, at its bottom, part of a conductor layer located on the substrate. A copper film is formed on the top surface of the insulation layer covering the substrate, and the side walls and bottoms of the respective via holes. A strike plating of copper is provided on the copper film, and the substrate is immersed in an aqueous solution containing a plating promoter to thereby deposit the plating promoter on the surface of the copper strike. The plating promoter is removed from the copper strike plating located on the top surface insulation layer while leaving the plating promoter on the side walls and bottoms of the respective via holes. The substrate is subsequently electroplated with copper to fill the via holes.

Abstract: The invention concerns the manufacture of complex metallic or metallized porous structures, wherein the electroplating metal over the entire developed surface is preceded by a specific pre-metallization of the basic structure. The pre-metallization is obtained by depositing a conductive polymer, which is deposited on the entire developed surface of the structure by the steps of an oxidizing pre-treatment of the structure, depositing in the liquid phase, a monomer having a polymerized form that is electrically conductive, and polymerizing by oxidation-doping of the monomer. The structures according to the invention are particularly intended for use as electrodes for the electrolysis of liquid effluents, as electrode supports for electrochemical generators, as catalyst supports, filtration media, phonic insulation, electromagnetic and nuclear protection structures, or for other applications.

Abstract: Disclosed herewithin is an apparatus for fabricating a stent which involves processing a tubular member whereby no connection points to join the edges of a flat pattern are necessary. The process includes the steps of: a) preparing the surface of a tubular member, b) coating the outside surface of the tubular member with a photo-sensitive resist material, c) placing the tubular member in an apparatus designed to simultaneously rotate the tubular member while passing a specially configured photographic frame negative between a light source and the tubular member, d) exposing the tubular member to a photoresist developer, e) rinsing the excess developer and uncured resist from the exposed tubular member, f) sealing the inner lumen of the tubular member, and g) treating the tubular member with a chemical or electro-chemical process to remove uncovered metal. By modifying the photographic negative, this process can be employed to fabricate a virtually unlimited number of stent designs and configurations.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: The present invention provides a plating method and apparatus, which is capable of introducing plating solution into the fine channels and holes formed in a substrate without needing to add a surface active agent to the plating solution, and capable of forming a high-quality plating film having no defects or omissions. The plating method for performing electrolytic or electroless plating of an object using a plating solution comprises: conducting a plating operation after or while deaerating dissolved gas in the plating solution; and/or conducting a preprocessing operation using a preprocessing solution after or while deaerating dissolved gas in the preprocessing solution and subsequently conducting the plating operation.

Abstract: The present invention is directed to methods and compositions for depositing a noble metal alloy onto a microelectronic workpiece. In one particular aspect of the invention, a platinum metal alloy is electrochemically deposited on a surface of the workpiece from an acidic plating composition. The plated compositions when combined with high-k dielectric material are useful in capacitor structures.

Abstract: A method for activating the surface of a base material and an apparatus thereof, which is suited to be utilized for pretreatment in electrochemical treatment such as, for example, electroplating or the like, in which the surface of a base material such as metal can be subjected to degreasing treatment and oxide film removing treatment simultaneously, efficiently and rationally, in which productivity can be enhanced and the equipment cost can be reduced, and in which a waste solution can be rationalized so that the solution can be reutilized and the environmental pollution can be prevented.

Abstract: The parts are produced by two-component injection molding. Those regions that are to be metallized consist of a first plastic and those regions that are not to be metallized consist of a second plastic. After the entire surface of the parts has been seeded, the seeding is selectively removed with the aid of a solvent in the regions which are not to be metallized. The first plastic is insoluble and the second plastic soluble in the solvent. The selective metallization then takes place by electroless metal deposition and, if appropriate, electrodeposition of metal.

Abstract: Disclosed are methods for repairing or enhancing discontinuous metal seed layers prior to subsequent metallization during the manufacture of electronic devices. Such repair methods do not require the use of a second electroplating bath.

Abstract: A copper sulfate plating bath is used which contains

Abstract: A gas turbine blade which has previously been in service is protected by cleaning the gas turbine blade, and then first depositing a platinum first layer on the airfoil and the platform of the gas turbine blade. Thereafter, a platinum second layer is deposited over the platform but not the airfoil. A platinum-aluminide protective coating is formed by depositing an aluminum-containing layer overlying both the platform and the airfoil and interdiffusing the platinum and the aluminum.

Abstract: The present invention relates to a method and apparatus for separating out metal copper according to an electroplating of copper using, for example, a solution of copper sulfate to produce copper interconnections on a surface of a substrate. The substrate is brought into contact, at least once, with a processing solution containing at least one of organic substance and sulfur compound which are contained in a plating solution. Thereafter, the substrate is brought into contact with the plating solution to plate the substrate.

Abstract: The invention consists of a method for producing an adherent copper coating on a zinc or zinc alloy article without the use of cyanide as a component of the process. The zinc or zinc alloy article is first immersed in an aqueous nickel pyrophosphate solution and is then electroplated with a copper pyrophosphate solution. The method produces an adherent copper coating on the zinc or zinc alloy, which can be deformed without any loss of the copper coating.

Abstract: A method for forming electroplating cathode contacts around the periphery of a semiconductor wafer including forming an insulating layer over a conductive layer extending at least around the periphery of a semiconductor wafer substrate; etching a plurality of openings around a peripheral portion of the semiconductor wafer substrate through the insulating layer to extend through a thickness of the insulating layer in closed communication with the conductive layer said conductive area in electrical communication with a central portion of the semiconductor wafer substrate; filling the plurality of openings with metal to form electrically conductive pathways; planarizing the electrically conductive pathway surfaces; and, forming a metal layer over the electrically conductive pathway surfaces to form a plurality of contact pads for contacting a cathode for carrying out an electroplating process.

Abstract: In filling fine via holes or trenches of the wiring (LSI) pattern formed on a semiconductor wafer, a copper electroplating is carried out by using a copper electroplating solution. containing an azole or a silane coupling agent, or a copper electroplating is carried out after the immersion into a pretreatment solution containing an azole or a silane coupling agent. As illustratively shown above, the addition of a component having the action to inhibit the dissolution of copper to an electroplating solution or the pretreatment by a solution containing a component having the action to inhibit the dissolution of copper can inhibit the dissolution of a copper seed layer covering poorly, and thus can prevent the occurrence of defects such as voids and seams.

Abstract: A method for coating a light metal alloy component to form a protective layer comprising Sn. First, a surface of the light metal alloy component is cleaned and passivated. A layer comprising Zn is formed on the surface, and a layer comprising Sn is deposited. An intermediate layer is preferably deposited between the Zn-containing layer and the Sn containing layer. The Sn-containing layer may additionally be varnished.

Abstract: The invention relates in general to a method of electroplating substrates where at least a portion of the substrate is coated with a solution containing a film forming amine and sufficient acid to produce a pH of less than 6.5. The acid helps to clean the surface of the substrate, and the film forming amine forms a film on the surface of the substrate. Electroplating proceeds with greatly improved speed and efficiency, especially in low current areas.

Abstract: An electrode consisting of a substrate and a diamond layer applied to the substrate, in which the applied diamond layer is pore-free, and a process for producing a diamond-coated electrode, in which the process comprises at least the following steps: a) cleaning the surface of the substrate; b) seeding the surface of the substrate with a high diamond nucleation density; c) coating the surface of the substrate with diamond.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion and causing greater plating of the cavity portion relative to the top portion.

Abstract: A method for applying a metal layer onto at least one surface of an aluminium or aluminium alloy workpiece, including the steps of pretreating the surface and applying the metal layer by plating, wherein the pretreating step includes a non-electrolytic treatment by immersion of the workpiece in a single acidic solution, preferably a sulphuric acid solution, having a temperature of at most 100° C. A brazed assembly comprising at least one component of an aluminium workpiece made by this method is also disclosed.

Abstract: An electroplating apparatus, in accordance with the present invention, includes a plurality of chambers. A first chamber includes an anode therein. The first chamber has an opening for delivering an electrolytic solution containing metal ions onto a surface to be electroplated. The surface to be electroplated is preferably a cathode. A second chamber is formed adjacent to the first chamber and has a second opening in proximity of the first opening for removing electrolytic solution containing metal ions from the surface to be electroplated. The plurality of chambers are adapted for movement in a first direction along the surface to be electroplated.

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.

Abstract: A method of processing wafers or other articles within a processing cell, entailing transporting a carrier supporting a vertically-oriented wafer horizontally through an inlet opening of a process cell, processing the vertically-oriented wafer within the process cell, and then transporting the carrier out of the process cell horizontally through an outlet opening of the process cell. In one exemplary implementation, the process performed within the cell is a pre-or post-treatment where the wafer is subjected to an acid solution treatment and/or a rinsing with de-ionized water treatment. In another exemplary implementation, the process performed within the process cell is an electroplating of the plating surface of the wafer. Additionally, a method of processing an empty carrier entailing transporting the carrier horizontally through an inlet opening of a process cell, processing the carrier within the process cell, and transporting the carrier out of the process cell horizontally through an outlet opening.

Abstract: A method for creating a material library of surface areas having different properties in which a substrate is coated. The substrate is subjected to a combined pretreatment procedure.

Abstract: A method for manufacturing a lead frame including the steps of electrocleaning the surface of a thin plate material, electropolishing the electrocleaned thin plate material, removing inclusions on the surface of the electropolished thin plate material, rinsing the inclusion-removed thin plate material with an acidic solution, and forming multi-plated layers on the rinsed material. The lead frame manufactured by the method has 5 or less inclusions each having approximately 1 &mgr;m, on the surface area of 1600 &mgr;m2, which impede a wire bonding property or solder wettability of the lead frame.

Abstract: A method of depositing a metal coating (28) on the interconnect (26) of a tubular, hollow fuel cell (10) contains the steps of providing the fuel cell (10) having an exposed interconnect surface (26); contacting the inside of the fuel cell (10) with a cathode (45) without use of any liquid materials; passing electrical current through a contacting applicator (46) which contains a metal electrolyte solution; passing the current from the applicator (46) to the cathode (45) and contacting the interconnect (26) with the applicator (46) and coating all of the exposed interconnect surface.

Abstract: A microneedle array is manufactured using a mold preparation procedure that begins by placing an optical mask over a layer of PMMA material, exposing the PMMA material to x-rays, then developing using a photoresist process. The remaining PMMA material is then electroplated with metal. Once the metal has reached an appropriate thickness, it is detached to become a metal mold that is used in a microembossing procedure, in which the metal mold is pressed against a heated layer of plastic material. Once the mold is pressed down to its proper distance, the plastic material is cooled until solidified, and the mold is then detached, thereby leaving behind an array of microneedles.

Abstract: Magnetic disk substrates are produced by subjecting glass substrates to at least steps of degreasing, etching, sensitization with tin chloride, activation and sensitivity-enhancing treatment in that order, then plating the pretreated substrates with a nickel/phosphorus film, and thereafter polishing the plated substrates. In the process, the substrates being processed are washed with hot pure water at a temperature of not lower than 50° C. for a period of from 20 to 90 seconds, after the sensitization step but before the activation step, and heated at a temperature of not lower than 70° C. for a period of from 5 to 100 minutes, after the sensitization step but before the nickel/phosphorus-plating step.

Abstract: The present invention relates to a copper electroplating bath composition and method of using it for microelectronic device fabrication. In particular, the present invention relates to copper electroplating in the fabrication of interconnect structures in semiconductor devices. By use of the inventive copper electroplating bath composition, the incidence of voids in the interconnect structures is reduced.

Abstract: The present invention relates to am article plated with boron carabide in a nickel-phosphorus matrix, obtained by a plating process comprising the following steps: a) preparation of an electrolytic bath comprising two or more nickel salts, at least one complexing agent, at least one phosphorus salt, and, in addition, an anti-tensioning agent and boron carbide in the form of powder; b) electroplating of the article in the electrolytic bath at a temperature ranging from 40° C. to 70° C., with a current density ranging from 1 to 10 A/dm2; and c) heat treatment of the product thus plated. The plating is used for any article that requires a type of plating which presents high resistance to wear, and in particular for cylinders for the production of corrugated cardboard.

Abstract: This invention relates, particularly, to a plating method and apparatus for a substrate for uses, such as the filling of a metal, e.g., copper (Cu), into a fine interconnection pattern (recesses) formed in a semiconductor substrate.

Abstract: A method for manufacturing a lead frame including the steps of electrocleaning the surface of a thin plate material, electropolishing the electrocleaned thin plate material, removing inclusions on the surface of the electropolished thin plate material, rinsing the inclusion-removed thin plate material with an acidic solution, and forming multi-plated layers on the rinsed material. The lead frame manufactured by the method has 5 or less inclusions each having approximately 1 &mgr;m, on the surface area of 1600 &mgr;m2, which impede a wire bonding property or solder wettability of the lead frame.

Abstract: A continuous plating system which is horizontal, allows for submersion of the entire article to be plated, and is useful for alloy plating. The invention provides a link/hinge conveyor system, the conveyor acts as the conductor, numerous processes/baths are possible, and difficult to plate alloys, such as a tin/bismuth plate can be produced. Homogeneous alloys are possible with the present invention. Also disclosed are novel dryer, rinse and reflow systems for use with the continuous plating system.

Abstract: The present invention is directed to processes and devices for performing the processes comprising electroplating one or more metallic or non-metallic continuous products with metals or metal alloys in a continuous process from aprotic electrolytes free of water and oxygen, wherein the continuous product is passed through a lock system (1) into an encapsulated coating plant under inert gas atmosphere, and the following steps are performed at temperatures ≦120° C.: activating the continuous product to be coated; rinsing the continuous product to be coated; contacting the continuous product to be coated; electroplating the continuous product to be coated using a metal or metal alloy; drying the coated continuous product; discharge of the coated continuous product from the plant through a lock system.

Abstract: The present invention is directed to an improved electroplating method, chemistry, and production worthy apparatus for depositing noble metals (e.g., platinum) and their alloys onto the surface of the workpiece, such as a semiconductor wafer, pursuant to manufacturing a microelectronic device, circuit, and/or component. The reliability of the noble metal material deposited using the disclosed method, chemistry, and/or apparatus is significantly better than the reliability of noble metal structures deposited using the teachings of the prior art. This is largely attributable to the low stress of films that are deposited using the teachings disclosed herein. The metals, which can be deposited, include gold, silver, platinum, palladium, ruthenium, iridium, rhodium, osmium and alloys containing these metals.

Abstract: The invention is relative to an electrode for gas evolution in electrolytic and electrometallurgical industrial applications, made of a metal substrate having a surface morphology characterized by a combination of micro-roughness and macro-roughness which favors high adherence of a superficial catalytic layer in order to prevent detachment of the same and passivation of the substrate even under critical operating conditions.

Abstract: The invention relates to a palladium colloid solution, which, in addition to a palladium compound, a protective colloid for stabilizing the colloid and a reducing agent, additionally contains noble metals from the group rhodium, iridium and platinum. The solution can be used to treat electrically non-conductive substrate surfaces, particularly in order to metallize the substrate surfaces directly and electrolytically. By means of this method, the nonconductive areas of the holes in printed circuit boards can be directly electrolytically metallized.