Abstract: The present disclosure, in some embodiments, relates to a silicon on insulator (SOI) substrate. The SOI substrate includes a dielectric layer disposed over a first substrate. The dielectric layer has an outside edge aligned with an outside edge of the first substrate. An active layer covers a first annular portion of an upper surface of the dielectric layer. The upper surface of the dielectric layer has a second annular portion that surrounds the first annular portion and extends to the outside edge of the dielectric layer. The second annular portion is uncovered by the active layer.

Abstract: Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11.

Abstract: The invention relates to microfabrication technology for producing sensing cells, for use, for example, in molecular electronic transducer (MET) based seismometers devices. In some aspects, a method for fabricating a sensing element is provided. The method includes providing a first wafer including a first substrate, a second substrate, and a first insulating layer between therebetween, etching a first fluid throughhole through the first substrate, the first insulating layer, and the second substrate, and coating the first substrate and second substrate with a first and second conductive coating, respectively. The method also includes providing a second wafer including a third substrate, a fourth substrate, and a second insulating layer therebetween, etching a second fluid throughhole through the third substrate, the second insulating layer, and the fourth substrate, and coating the third substrate with a third conductive coating from top and the fourth substrate with a fourth conductive coating from back.

Abstract: A method of fabricating a semiconductor assembly can include providing a semiconductor element having a front surface, a rear surface, and a plurality of conductive pads, forming at least one hole extending at least through a respective one of the conductive pads by processing applied to the respective conductive pad from above the front surface, forming an opening extending from the rear surface at least partially through a thickness of the semiconductor element, such that the at least one hole and the opening meet at a location between the front and rear surfaces, and forming at least one conductive element exposed at the rear surface for electrical connection to an external device, the at least one conductive element extending within the at least one hole and at least into the opening, the conductive element being electrically connected with the respective conductive pad.

Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract: A method of fabricating a semiconductor assembly can include providing a semiconductor element having a front surface, a rear surface, and a plurality of conductive pads, forming at least one hole extending at least through a respective one of the conductive pads by processing applied to the respective conductive pad from above the front surface, forming an opening extending from the rear surface at least partially through a thickness of the semiconductor element, such that the at least one hole and the opening meet at a location between the front and rear surfaces, and forming at least one conductive element exposed at the rear surface for electrical connection to an external device, the at least one conductive element extending within the at least one hole and at least into the opening, the conductive element being electrically connected with the respective conductive pad.

Abstract: A differential capacitive pressure sensor of an embodiment of the present invention has first and second diaphragms positioned on opposing sides of a single substrate. Each diaphragm of the pressure transducer is configured to be exposed to a transient fluid, with the first and second pressure transducers being arranged with their respective deflection surfaces directed outwardly from each other. The differential capacitive pressure sensor may be configured to output representations of differential and common mode pressure of the transient fluids, where a representation of a common mode is cancelled in generating the representation of the differential pressure. The transient fluids may be the same fluid at different locations within a flow path. The diaphragms may be constructed from a ceramic material to be able to withstand exposure to corrosive or caustic fluids.

Abstract: A method of fabricating a semiconductor assembly can include providing a semiconductor element having a front surface, a rear surface, and a plurality of conductive pads, forming at least one hole extending at least through a respective one of the conductive pads by processing applied to the respective conductive pad from above the front surface, forming an opening extending from the rear surface at least partially through a thickness of the semiconductor element, such that the at least one hole and the opening meet at a location between the front and rear surfaces, and forming at least one conductive element exposed at the rear surface for electrical connection to an external device, the at least one conductive element extending within the at least one hole and at least into the opening, the conductive element being electrically connected with the respective conductive pad.

Abstract: The invention relates to a method for connecting a precious metal surface to a polymer, wherein a layer made of 20% to 40% gold and 60% to 80% silver is deposited on a substrate and the silver is subsequently selectively removed in order to produce a nanoporous gold layer. A fluid polymer is applied to the gold layer and cured.

Abstract: Forming a porous layer on a silicon substrate is disclosed. Forming the porous layer can include placing a silicon substrate in a first solution and conducting a first current through the silicon substrate. It can further include conducting a second current through the silicon substrate resulting in a porous layer on the silicon substrate.

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract: A wafer contacting device may include: a receiving region configured to receive a wafer; and an elastically deformable carrier disposed in the receiving region and including an electrically conductive surface region.

Abstract: An electrode for an electrochemical machining process is provided. The electrode includes an electrically conductive member defining at least one passage and an insulating coating partially covering a side surface of the electrically conductive member. The insulating coating does not cover at least one of first and second exposed sections of the electrically conductive member, where the first and second exposed sections are separated by approximately 180 degrees and extend substantially along a longitudinal axis of the electrically conductive member. The insulating coating also does not cover an exposed front end of the electrically conductive member. An electrochemical machining method is also provided, for forming a non-circular hole in a workpiece using the electrode.

Abstract: An electrochemical machining process for forming a non-circular hole from a substantially circular hole within a workpiece using an electrode. The electrode is made of an electrically conductive material and has insulated areas in which the electrically conductive material is coated with an insulating material, and exposed areas of metal or conductive material. The insulated areas and exposed areas extending in rows substantially along a longitudinal axis of the electrode. The electrode is first positioned in a substantially circular hole. An electric current is then applied to the electrode to electrochemically remove a predetermined amount of material from the substantially circular hole to form a non-circular hole. A variety of different non-circular shapes are achievable using the process.

Abstract: A method for manufacturing an all solid-state lithium-ion rechargeable battery includes forming a first active material layer on a base, forming a solid electrolyte layer connected to the first active material layer, forming a second active material layer connected to the solid electrolyte layer, and repairing a short-circuit defect produced between the first active material layer and the second active material layer by supplying a repair current between the first active material layer and the second active material layer.

Abstract: This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

Abstract: Electrochemical etching tailors topography of a nanocrystalline or amorphous metal or alloy, which may be produced by any method including, by electrochemical deposition. Common etching methods can be used. Topography can be controlled by varying parameters that produce the item or the etching parameters or both. The nanocrystalline article has a surface comprising at least two elements, at least one of which is metal, and one of which is more electrochemically active than the others. The active element has a definite spatial distribution in the workpiece, which bears a predecessor spatial relationship to the specified topography. Etching removes a portion of the active element preferentially, to achieve the specified topography. Control is possible regarding: roughness, color, particularly along a spectrum from silver through grey to black, reflectivity and the presence, distribution and number density of pits and channels, as well as their depth, width, size.

Abstract: A method of manufacture for optical spectral filters with omnidirectional properties in the visible, near IR, mid IR and/or far IR (infrared) spectral ranges is based on the formation of large arrays of coherently modulated waveguides by electrochemical etching of a semiconductor wafer to form a pore array. Further processing of said porous semiconductor wafer optimizes the filtering properties of such a material. The method of filter manufacturing is large scale compatible and economically favorable. The resulting exemplary non-limiting illustrative filters are stable, do not degrade over time, do not exhibit material delamination problems and offer superior transmittance for use as bandpass, band blocking and narrow-bandpass filters. Such filters are useful for a wide variety of applications including but not limited to spectroscopy, optical communications, astronomy and sensing.

Abstract: An electrolytic polishing method of a substrate having a barrier film and an interconnect metal layer on a surface to be processed under the presence of an electrolytic solution, including a barrier film electrolytic polishing process which removes the barrier film by applying a voltage between a cathode and an anode, with the surface to be processed serving as the cathode, and causing relative motion between the surface to be processed and a polishing pad which faces and makes contact with the surface to be processed.

Abstract: A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in solutions that do not contain hydrofluoric acid (HF-free solutions). The method includes immersing an as-cut semiconductor material in an etching solution, and positive biasing at atypically highly positive (anodic) potentials, thereby significantly increasing the value of the anodic current density (measured as A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination on the semiconductor material surface contacted and wetted by the etching solution. This is done for a necessary and sufficient period of time to enable a positive synergistic effect on the rate and extent of etching of the semiconductor material therefrom.

Abstract: A method of removing unwanted material from a substrate includes providing a system (600) having an etchant solution (610) with an electrode (620) therein and a current supply (630) connected to the electrode, placing the substrate in the solution and connecting it to the current supply, providing an electric current to the electrode, and altering a polarity of the electric current such that the substrate experiences an anodic polarity for a first time period and a cathodic polarity for a shorter time period. An alternative method includes providing a solution delivery system (1100) having a second etchant solution (1110) with an eductor jet (1140) therein and a recirculation pump connected to the eductor jet, placing the substrate in the second solution, and using the eductor jet to spray the substrate with the second solution. If desired, both methods may be used.

Abstract: A metal is provided on a polymeric component and the component is subjected to a removal process such as plasma or liquid etching in the presence of an electric field. The etchant selectively attacks the polymer at the boundary between the metal and the polymer, thereby forming gaps alongside the metal. A cover metal may be plated onto the metal in the gaps. The cover metal protects the principal metal during subsequent etching procedures.

Abstract: A method of forming an electron emitter includes the steps of: (i) forming a nanostructure-containing material; (ii) forming a mixture of nanostructure-containing material and a matrix material; (iii) depositing a layer of the mixture onto at least a portion of at least one surface of a substrate by electrophoretic deposition; (iv) sintering or melting the layer thereby forming a composite; and (v) electrochemically etching the composite to remove matrix material from a surface thereof, thereby exposing nanostructure-containing material.

Abstract: The UV, deep UV and/or far UV (ultraviolet) filter transmission spectrum of an MPSi spectral filter is optimized by introducing at least one layer of substantially transparent dielectric material on the pore walls. Such a layer will modify strongly the spectral dependences of the leaky waveguide loss coefficients through constructive and/or destructive interference of the leaky waveguide mode inside the layer. Increased blocking of unwanted wavelengths is obtained by applying a metal layer to one or both of the principal surfaces of the filter normal to the pore directions. The resulting filters are stable, do not degrade over time and exposure to UV irradiation, and offer superior transmittance for use as bandpass filters. Such filters are useful for a wide variety of applications including but not limited to spectroscopy and biomedical analysis systems.

Abstract: A method of manufacture for optical spectral filters with omnidirectional properties in the visible, near IR, mid IR and/or far IR (infrared) spectral ranges is based on the formation of large arrays of coherently modulated waveguides by electrochemical etching of a semiconductor wafer to form a pore array. Further processing of said porous semiconductor wafer optimizes the filtering properties of such a material. The method of filter manufacturing is large scale compatible and economically favorable. The resulting exemplary non-limiting illustrative filters are stable, do not degrade over time, do not exhibit material delamination problems and offer superior transmittance for use as bandpass, band blocking and narrow-bandpass filters. Such filters are useful for a wide variety of applications including but not limited to spectroscopy, optical communications, astronomy and sensing.

Abstract: The present invention is directed to nanoporous metal membranes and methods of making nanoporous metal membranes from metal leaf. At least a portion of the metal leaf is freely supported by a de-alloying medium for a time effective to de-alloy the metal leaf. After the porous membrane is formed, the membrane may be re-adhered to a substrate and removed from the de-alloying medium. The de-alloying process may be thermally and electrically influenced.

Abstract: A micromechanical component having a substrate made from a substrate material having a first doping type, a micromechanical functional structure provided in the substrate and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones made from the substrate material having a second doping type, the zones being at least partially surrounded by a cavity, and the cover layer has a porous layer made from the substrate material.

Abstract: An electrochemical etching system has an etching bath for holding an n-type silicon substrate with a first surface of the substrate in contact with hydrofluoric acid, an electrode positioned in the hydrofluoric acid, a power source having a positive pole connected to the silicon substrate and a negative pole connected to the electrode, and an illumination unit having a light source for illumination of a second surface of the silicon substrate. The illumination unit illuminates the second surface of the silicon substrate with an illumination intensity of 10 m W/cm2 or more. A ratio of a maximum illumination to a minimum illumination of the second surface of the silicon substrate is 1.69:1 or less. With the etching system, pores and/or trenches of a certain size and shape can be formed in an entire area of the silicon substrate having a diameter of more than three inches.

Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.

Abstract: An electrochemical etching cell (1) is proposed for etching an etching body (15) made at least superficially of an etching material. The etching cell (1) has at least one chamber filled with an electrolyte, and is provided with a first electrode (13), which at least superficially has a first electrode material, and with a second electrode (13′) which at least superficially has a second electrode material. Furthermore, the etching body (15) is in contact, at least region-wise, with the electrolyte. In this context, the first electrode material and the second electrode material are selected such that, after the etching, the etching body (15) is not contaminated and/or is not impaired in its properties by the electrode materials. In particular, the electrode materials are the same materials as the etching material. Also proposed is a method for etching an etching body (15) using this etching cell (1), the first and/or the second electrode (13, 13′) being used as a sacrificial electrode.

Abstract: A method for improving an electrodeposited metal film uniformity and preventing metal deposition and peeling of deposited metal from an electrode during an electrodeposition and electropolishing process including providing a first anode electrode assembly and a semiconductor wafer plating surface disposed in an electrolyte bath including a plating metal for deposition onto the semiconductor wafer plating surface; providing at least one additional anode electrode assembly including the plating metal disposed peripheral to the first anode electrode assembly for selectively applying the cathodic electrical potential during an electropolishing process; and, periodically alternating between an electrodeposition process and electropolishing process with respect to the semiconductor wafer plating surface such that the plating metal is preferentially plated onto the at least one additional electrode assembly.

Abstract: A method for selectively removing a layer of electrolytically dissoluble metal from a substrate comprising providing a substrate bearing' on a major surface thereof a layer of electrolytically dissoluble metal, said metal layer serving; as a dissoluble electrode; providing at least a first counterelectrode and a second counterelectrode; positioning said counterelectrodes opposite said metal layer and spaced from said metal layer; in a first electrolytic step, interposing an electrolyte between said metal and said first counterelectrode and in electrical contact with said metal layer and said electrode and passing an electric current between said first counterelectrode and said metal layer, wherein said first counterelectrode is maintained cathodic to said metal layer, for a period of time until said metal layer has been removed from a first central region of said surface of said substrate opposite said first counterelectrode; in a second electrolytic step, interposing an electrolyte between said metal and sai

Abstract: A method and apparatus for the electrochemical machining of grooves for a hydrodynamic bearing is provided. Grooves and a relief cut are simultaneously electrochemically etched into a surface of a workpiece.

Abstract: An electrode assembly arrangement for improving an electrodeposition process and method for using the same the electrode assembly arrangement including a first electrode assembly and a second electrode assembly positioned to carry a metal containing electrolyte from the first electrode assembly to the second electrode assembly for deposition of the metal upon applying an electrical potential therebetween; at least one additional electrode assembly including a means for selectively applying an electrical potential thereto the at least one additional electrode assembly positioned to attract an electrolyte flow upon applying an electrical potential between the at least one additional electrode assembly and the second electrode assembly.

Abstract: A method for the production of filters in which a blank of n- or p-doped etchable semiconductor material is connected as an anode or a cathode according to doping. The method includes contacting a first side of the blank with an etching solution in which a counterelectrode is arranged to electrochemically etch the first side, and supplying activation energy to generate minority charge carriers to the blank during the etching process. The activation energy supplied per unit time is reduced with increasing etching progress.

Abstract: A method for producing the silicon nanoparticle of the invention is a gradual advancing electrochemical etch of bulk silicon. Separation of nanoparticles from the surface of the silicon may also be conducted. Once separated, various methods may be employed to form nanoparticles into colloids, crystals, films and other desirable forms. The particles may also be coated or doped.

Abstract: The present invention discloses an apparatus having a platen; a polishing pad disposed over the platen; a slurry dispenser disposed over the polishing pad; a cathode connected electrically to the polishing pad; a wafer carrier disposed over the polishing pad;

Abstract: There is provided a process for etching a semiconductor material, comprising the steps of: providing an electrochemical cell containing an etching electrolyte, the etching electrolyte being selected from the group of acidic electrolyte solutions, alkaline solutions, neutral solutions, and molten electrolytes; immersing the semiconductor material in the etching electrolyte, whereby at least one surface of the semiconductor material contacts the etching electrolyte; thereafter negatively biasing the semiconductor material; and while continuing to negatively bias the semiconductor material, illuminating at least part of the at least one surface of the semiconductor material which contacts the etching electrolyte with light selected from the group of ultraviolet, visible, and infrared light. There is also provided an apparatus for effecting the process of the invention, as well as semiconductor materials so etched.

Abstract: A method for producing water containing ozone by electrolysis, using an apparatus comprising,

Abstract: An electropolishing apparatus for polishing a metal layer formed on a wafer (31) includes an electrolyte (34), a polishing receptacle (100), a wafer chuck (29), a fluid inlet (5, 7, 9), and at least one cathode (1, 2, 3). The wafer chuck (29) holds and positions the wafer (31) within the polishing receptacle (100). The electrolyte (34) is delivered through the fluid inlet (5, 7, 9) into the polishing receptacle (100). The cathode (1, 2, 3) then applies an electropolishing current to the electrolyte to electropolish the wafer (31). In accordance with one aspect of the present invention, discrete portions of the wafer (31) can be electropolished to enhance the uniformity of the electropolished wafer.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: An interference filter having a layer with an area consisting of a porous material extending from the surface of the layer to the interior, the dimensions of the porous layer area in a direction normal to the layer surface have different values to provide for varying reflection or, respectively, transmission characteristics.

Abstract: The present invention pertains to apparatus and methods for planarization of metal surfaces having both recessed and raised features, over a large range of feature sizes. The invention accomplishes this by increasing the fluid agitation in raised regions with respect to recessed regions. That is, the agitation of the electropolishing bath fluid is agitated or exchanged as a function of elevation on the metal film profile. The higher the elevation, the greater the movement or exchange rate of bath fluid. In preferred methods of the invention, this agitation is achieved through the use of a microporous electropolishing pad that moves over (either near or in contact with) the surface of the wafer during the electropolishing process. Thus, methods of the invention are electropolishing methods, which in some cases include mechanical polishing elements.

Abstract: In an interference filter having a layer with an area consisting of a porous material extending from the surface of the layer to the interior, the dimensions of the porous layer area in a direction normal to the layer surface have different values to provide for varying reflection or, respectively, transmission characteristics.

Abstract: A novel method to fabricate nanoscale pits on Au(111) surfaces in contact with aqueous solution is claimed. The method uses in situ electrochemical scanning tunnelling microscopy with independent electrochemical substrate and tip potential control and very small bias voltages. This is significantly different from other documented methods, which mostly apply high and short voltage pulses. The most important advantages of the present method are that the dimensions and positions of the pits can be controlled with high precision in aqueous environment so that nanopatterns of the pits can be designed, and that the operations are simple and require no instrumental accessories. Parameters, which control the pit formation and size, have been systematically characterized and show that the primary controlling parameter is the bias voltage. A mechanism based on local surface reconstruction induced by electronic contact between tip and substrate is in keeping with the overall patterns for pit formation.

Abstract: An epitaxial layer of silicon is grown on a layer of partially-oxidized porous silicon, then covered by a capping layer which provides structural support and prevents oxidation of the epitaxial layer. A high-temperature anneal allows the partially oxidized silicon layer to separate into distinct layers of silicon and SiO2, producing a buried oxide layer. This method provides a low cost means of producing silicon-on-insulator (SOI) wafers.

Abstract: In the manufacturing of the cold cathode device which has a porous silicon portion as an emitter portion, the silicon layer is given an electric potential, while the gate electrode is given an electric potential lower than that of the silicon layer. And thereby, the predetermined portion of the silicon layer is subjected to anodic etching to be rendered into the porous silicon portion. With such anodic etching, the cold cathode device with the porous silicon portion is obtained.

Abstract: A method for producing a filter includes the steps of providing a blank of etchable semiconductor material having a first side and a second side and affixing a holding element to the blank. The holding element is chemically resistant to an etching solution. A current source is connected to the blank and at least one of the first and second sides of the blank is illuminated with light. The holding element and the blank are immersed in the etching solution until the first side of the blank is wetted so that the first side is etched electrochemically. The holding element is affixed to the blank such that contact areas between the holding element and the blank remain free of the etching solution.

Abstract: An attachment surface for an implantable device has a random irregular pattern formed through a repetitive masking and chemical milling process. Additionally, an attachment surface for an implantable device has a random irregular pattern formed through a repetitive masking and electrochemical milling process. The electrochemical milling process is particularly well suited for use with substrate materials which have high chemical inertness which makes them resistant to chemical etching. Surface material is removed from the implant surface without stress on the adjoining material and the process provides fully dimensional fillet radii at the base of the surface irregularities. This irregular surface is adapted to receive the ingrowth of bone material and to provide a strong anchor for that bone material. The unitary nature of the substrate and surface features provides a strong anchoring surface with is resistant to cracking or breaking.

Abstract: A method for improving the conformity of the conductive layer in a contact hole, thus allowing for the formation of a plug in the resulting contact hole. The aforementioned method includes the following steps. First, immerse the conductive layer of the semiconductor wafer into an electrolyte. The first portion of the conductive layer at the opening of the contact hole contact with the electrolyte, the conductive layer in the contact hole is not in contact with the electrolyte due to the surface tension of the electrolyte. Second, electrically couple the electrolyte to the anode of the source power. Finally, electrically couple the conductive layer to the cathode of the power source until the first portion of the conductive layer at the opening of the contact hole is removed.