Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: This invention provides an electrochemical analysis method for accurately detecting a harmful substance such as arsenic contained in a solution. In the electrochemical analysis method, a working electrode and a counter electrode are disposed in an object electrolytic solution. A negative potential is applied to the working electrode to electrodeposit the electrolyte onto the surface of the working electrode and thus to form an electrodeposit. Next, the potential of the working electrode is sweeped in a positive potential direction to allow the electrodeposit to elute into the solution and, at the same time, to detect a current change upon a potential change and thus to analyze an object substance dissolved as an electrolyte in the object electrolytic solution. A boron-doped electroconductive diamond electrode or an electrode with gold deposited on its surface is used as the working electrode.

Abstract: Metal-polymer hybrid nanomaterials are provided. The hybrid nanomaterials comprise nanotubes or nanowires and metal layers formed on the inner or outer surfaces of the nanotubes or the outer surfaces of the nanowires. The nanotubes or nanowires include a light-emitting ?-conjugated polymer and the metal layers are composed of a metal whose surface plasmon energy level is close to the energy band gap of the nanotubes or nanowires. Further provided are a method for preparing the hybrid nanomaterials, a method for controlling the optical properties of the hybrid nanomaterials, and an optoelectronic device using the hybrid nanomaterials. Energy transfer and electron transfer based on surface plasmon resonance increases the number of excitons in the conduction band of the nanotubes or nanowires including the light- emitting polymer, resulting in a remarkable increase in the luminescence intensity of the metal-polymer hybrid nanomaterials.

Abstract: Methods and apparatus for controlling a catalytic layer deposition process are provided. A feed stream comprising a carbon source is provided to a catalyst layer. An asymmetrical alternating current is applied to the catalyst layer. A polarization impedance of the catalyst layer is monitored. The polarization impedance can be controlled by varying the asymmetrical alternating current. The controlling of the polarization impedance provides control over the structure and amount of carbon particles deposited on the catalyst layer. The carbon particles may be in the form of nanotubes, fullerenes, and/or nanoparticles.

Abstract: The invention provides a method of controlling the rate of noncovalent silica deposition onto at least one carbon nanotube. The method comprises (a) providing a one chamber electrochemical cell comprising a working electrode comprising at least one carbon nanotube; a reference electrode; a counter electrode; supporting electrolytes; and a reagent solution, wherein the reagent solution comprises a precursor of silica; and (b) applying a selected negative potential to the working electrode, wherein the rate of silica deposition onto the at least one carbon nanotube increases as the potential becomes more negative.

Abstract: Disclosed are embodiments of a method that both monitors patterning integrity of etched openings (i.e., ensures that lithographically patterned and etched openings are complete) and forms on-chip conductive structures (e.g., contacts, interconnects, fuses, anti-fuses, capacitors, etc.) within such openings. The method embodiments incorporate an electro-deposition process to provide both the means by which pattern integrity of etched openings can be monitored and also the metallization required for the formation of conductive structures within the openings. Specifically, during the electro-deposition process, electron flow is established by applying a current to the back side of the semiconductor wafer, thus, eliminating the need for a seed layer. Electron flow through the wafer and into the electroplating solution is then monitored and used as an indicator of electroplating in the etched openings and, thereby, as an indicator that the openings are completely etched.

Abstract: A plating film is formed by the steps of applying a direct current between a cathode and an anode (S10); superimposing an alternating current component on the direct current between the cathode and the anode and detecting a displacement current flowing between the cathode and the anode (S12 to S16); calculating a variation of a surface area of the plating film based on the displacement current (S18 and S20); and controlling the value of the direct current based on the variation of the surface area of the plating film so that the local area current density for the surface area does not change (S22 and S24). Consequently favorable film properties are provided to the plating film.

Abstract: An anodizing method in which a workpiece made of aluminum or aluminum alloy is immersed in an electrolytic solution, and treatment is performed in which the application of positive voltage for a very short period of time and the removal of charges are repeated alternately between the workpiece and a cathode arranged in the electrolytic solution includes a step of performing treatment in which the positive voltage application and the charge removal are repeated in a tentative cycle, measuring the control point arrival time of a current waveform at the positive voltage application period, and determining normal positive voltage application time based on the control point arrival time; and a step of performing treatment in which the application of positive voltage and the removal of charges are repeated in a cycle corresponding to the normal positive voltage application time, and forming an anodized film on the surface of the workpiece.

Abstract: Apparatus and method for electrolytic coating of a mould, the internal surfaces of which demarcate a mould cavity, with a coating material for the purpose of achieving or re-achieving intended mould cavity dimensions. The mould, as the cathode, and an anode positioned in the mould cavity and an electrolyte containing the coating material are used. The electrolyte serving as the carrier of the coating material flows through the mould cavity in a controlled manner. During the electrolytic coating, only the internal surfaces of the mould cavity come into contact with the electrolyte and the external surfaces of the s mould therefore do not have to be covered. The mechanical properties can be kept largely uniform over the entire region. The coating can be achieved more rapidly than with the conventional processes.

Abstract: The present invention relates to a method and apparatus for determining organic additive concentrations in a sample electrolytic solution, preferably a copper electroplating solution, by measuring the double layer capacitance of a measuring electrode in such sample solution. Specifically, the present invention utilizes the correlation between double layer capacitance and the organic additive concentration for concentration mapping, based on the double layer capacitance measured for the sample electrolytic solution.

Abstract: A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter.

Abstract: A method and system for controlling an electroless deposition process are provided. The system generally includes an electroless plating cell having a work piece to be plated positioned therein, the work piece also being positioned in communication with an electroless plating solution contained by the plating cell, and a voltage measurement device in communication with the work piece and the electroless plating solution, the voltage measurement device being configured to measure the electrical potential difference between the work piece and the plating solution.

Abstract: A method and apparatus are described that use cell voltage and/or current as monitor to prevent electrochemical deposition (e.g., electroplating) tools from deplating wafers with no or poor metal (e.g., Cu) seed coverage. In one embodiment, the voltage of a plating cell including a reference wafer which has substantially complete Cu seed coverage is measured. A reference resistance of the plating cell with the reference wafer is determined. The voltage of the plating cell including a calibration wafer which has no or insufficient seed coverage at its edge is measured. A calibration resistance of the plating cell with the calibration wafer is determined. An error trigger based on a comparison of the reference resistance with the calibration resistance is selected.

Abstract: A method for an electroplating cell which includes providing an anode chamber with at least two concentric anodes including an inner anode and an outer anode; generating a computer generated model with a simulation computer program; and selecting at least one current ratio from the computer generated model, with the computer generated model having a plurality of current ratios from which the at least one current ratio is selected and the one current ratio being a ratio of an inner electrical current to an outer electrical current. The method further includes applying the inner electrical current to the inner anode and the outer electrical current to the outer anode and adjusting the inner and outer electrical currents to incorporate the one current ratio. The generating of the computer generated model with the simulation computer program includes using a first iterative loop to determine a potential field in the anode chamber.

Abstract: A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition.

Abstract: Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: The present invention relates to a method and apparatus for determining organic additive concentrations in a sample electrolytic solution, preferably a copper electroplating solution, by measuring the double layer capacitance of a measuring electrode in such sample solution. Specifically, the present invention utilizes the correlation between double layer capacitance and the organic additive concentration for concentration mapping, based on the double layer capacitance measured for the sample electrolytic solution.

Abstract: An improved electrode and method for manufacturing the improved electrode wherein the electrode having a fractal surface coating of platinum [which the present inventor refers to as “platinum gray”] with a increase in surface area of at least 5 times when compared to shiny platinum of the same geometry and also having improved resistance to physical stress when compared to platinum black having the same surface area. The process of electroplating the surface coating of platinum gray comprising plating at a moderate rate, i.e., at a rate that is faster than the rate necessary to produce shiny platinum and that is less than the rate necessary to produce platinum black.

Abstract: A method of controlling a conductive layer deposition process includes depositing a conductive layer onto a semiconductor wafer based upon a deposition recipe, measuring a thickness of the conductive layer deposited on the semiconductor wafer, determining whether the measured thickness of the conductive layer is within a predetermined tolerance, and revising the deposition recipe if the thickness of the conductive layer is not within the predetermined tolerance.

Abstract: A ceramic coating is formed on a conductive article by immersing a first anodic electrode, including the conductive article, in an electrolyte comprising an aqueous solution of alkali metal hydroxide and an alkali metal silicate, providing a second cathodic electrode in contact with the electrolyte, and passing an alternating current from a resonant power source through the first electrode and to the second electrode while maintaining the angle ? between the current and the voltage at zero degree, while maintaining the voltage within a predetermined range. The resulting ceramic coated article comprises a coating which includes a metal, silicon, and oxygen, wherein the silicon concentration increases in the direction from the article surface toward an outer surface of the ceramic coating surface layer.

Abstract: Electroplating station S has a head 1 with anode 2, to one side of which there is located an electrically neutral wall 3. The width of anode 2 is provided to accommodate the width of web 6. Serrations 9 are provided on the anode 2, especially in the area of top surface 8. A passageway 4 for electrolyte 5 is between anode 2 and wall 3. Mesh 11 is located at a throat section 12 of passageway 4 shortly before the start of the guide 7. In addition, mesh 13 is located further upstream in passageway 4 as an alternative and/or as an addition to mesh 11. Guide 7 of wall 3, serrations 9, and meshes 11 and 13 enhance and maximize the production of stream-wise vortices. These vortices cause a substantial increase in the ion flow, which overcomes boundary layers and results in additional deposition of copper onto the web 6.

Abstract: A process for forming oxide based dense ceramic composite coatings on reactive metal and allow bodies involves suspension of at least two reactive metal or alloy bodies in a non-metallic, non-conducting, non-reactive chamber in such a way that it causes either partial or full immersion of the bodies in a continuously circulating electrolyte. Thyristor controlled, modified shaped wave multiphase alternating current power supply is applied across the bodies where in each body is connected to an electrode. Electric current supplied to the bodies is slowly increased to a particular value till the required current density is achieved and the maintained at the same level throughout the process. Visible arcing at the surface of the immersed regions of the bodies is identified when the applied electric potential crosses 60V. Electric potential is further increased gradually to compensate the increasing resistance of the coating.

Abstract: The invention relates to the analysis of the performance and properties of electrochemical processes, and specifically, to electrolytic solutions and electrode processes. The invention discloses a device and a method for obtaining qualitative and quantitative information for the kinetics of the electrode reactions, the transport processes, the thermodynamic properties of the electrochemical processes taking place in the cell. When a deposition reaction takes place, the device provides also valuable information about the relationship between the current density and deposit properties including but not limited to the deposit color, luster, and other aspects of its appearance. The device disclosed herein typically is comprised of a multiplicity of cathodic or anodic regions where one or more electrochemical reactions take place simultaneously, but at a different rate.

Abstract: A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.

Abstract: A method of separating and recovering 18F from 18O water at high purity and efficiency while maintaining the purity of the 18O water. By using a solid electrode (1) as an anode and a container (electrodeposition vessel) (2) made of platinum as a cathode, 18F in a solution (4) is electrodeposited on the solid electrode surface by applying a voltage. Then, by using the solid electrode (1) on which 18F is electrodeposited as a cathode and a container (recovery vessel) (5) holding pure water therein as an anode, 18F is recovered in the pure water by applying a voltage of opposite polarity to that of the electrodeposition. In this process, little 18O water is lost. The initial concentration of the 18O water is maintained even after the electrodeposition of 18F, so that the 18O water can be repeatedly used as an irradiation target for production of 18F.

Abstract: The use of an insulating shield for improving the current distribution in an electrochemical plating bath is disclosed. Numerical analysis is used to evaluate the influence of shield shape and position on plating uniformity. Simulation results are compared to experimental data for nickel deposition from a nickel—sulfamate bath. The shield is shown to improve the average current density at a plating surface.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: Methods for electroplating metal can include passing an electrical current through a conductive surface and an electroplating solution adjacent the conductive surface. An electroplating voltage for the conductive surface and the electroplating solution can be determined based on the electrical current through the conductive surface and the electroplating solution adjacent the conductive surface. The determined electroplating voltage can then be maintained while electroplating the metal from the electroplating solution on the conductive surface. Related systems are also discussed.

Abstract: In an electroplating apparatus for semiconductor wafers, the currents to each of a plurality of contact portions contacting the wafer edge are individually adjustable and/or a parameter indicative of the current flow in each contact portion may be determined. Moreover, for precise control of the currents, means are provided for monitoring the currents.

Abstract: The invention relates to the detection of oxidation of carbon-containing fibers or fiber bundles embedded in a nonconductive or semiconducting ceramic matrix in composites wherein use is made of the eddy current method.

Abstract: A method for determining an end point of a planarization process for removing metal from a surface of a substrate submerged in an electrolytic solution or slurry. A first electrode is provided which is operable to contact the surface of the substrate, such as a working electrode of a potentiostat system. A second electrode is provided which is operable to contact the electrolytic solution, such as a reference electrode of the potentiostat system. The first electrode is contacted to the surface of the substrate and an electrochemical property is measured, such as the electrochemical potential between the first and second electrodes, where the electrochemical property is indicative of an electrochemical characteristic of the substrate-slurry system. The planarization process is preferably stopped when a substantial change in the electrochemical potential of the system is measured.

Abstract: The present invention relates to PCGA analytical procedure, in which each PCGA plating/measuring cycle is performed with the stripping and cleaning of test electrode immediately conducted before the equilibrium step, so as to use the metal plate layer formed during a previous plating/measuring cycle as a protective layer for the test electrode. The present invention also relates to PCGA calibration measurement protocol, in which both the calibration measurements and the sample measurement are conducted after a background measurement step.

Abstract: A method of forming a copper layer with increased electromigration resistance. A doped copper layer is formed by controlling the incorporation of a non-metallic dopant during copper electroplating.

Abstract: A method of manufacturing a positive electrode foil of an aluminum electrolytic capacitor is provided in which anodizing conditions are optimally determined and automatically set to minimize the loss of production and to produce a constant quality of the positive electrode foil. The method comprises an etching process and an anodizing process. An etched foil produced in the etching process is subjected to a constant current inspection, and then, the anodizing conditions are determined from the result of the constant current inspection. The anodizing conditions are transferred to a control panel in the anodizing process where they are automatically registered as its settings. Also, an apparatus for manufacturing the positive electrode foil is provided which has a voltage sensor connected between an output running roller and cathode electrodes in an anodizing tank. A voltage measured by the voltage sensor is fed back to a direct-current source for controlling its output voltage.

Abstract: The present invention relates to a method for determining concentration of brightener and leveler contained in an aqueous acid metal electroplating solution, by firstly determining the concentration of the brightener at a first set of measurement conditions, and secondly determining the concentration of the leveler at a second set of measurement conditions, provided that the first set of measurement conditions differ from the second set of measurement conditions on the rotation speed of a rotating disc electrode used for measuring plating potential of said aqueous acid metal electroplating solution, and optionally, the electroplating duration at which the plating potential of said aqueous acid metal electroplating solution is measured, provided that the first rotation speed is lower than the second rotation speed, and that the first electroplating duration is shorter than the second electroplating duration.

Abstract: Methods and apparatus employ the use of arrays of two or more electronically discrete electrodes to facilitate high-throughput preparation and testing of materials with two or more elements. High rates of deposition, synthesis and/or analysis of materials are achieved with the use of arrays of electrodes whereby desired materials are developed. The high rate synthesis and/or analysis of an array of materials uses deposition control techniques in conjunction with the electrode array to develop a meaningful array of materials and to analyze the materials for desired characteristics to develop one or more materials with desired characteristics. The use of an array of electrodes enables high throughput development of materials having scientific and economic advantages.

Abstract: In an electroplating apparatus for semiconductor wafers, the currents to each of a plurality of contact portions contacting the wafer edge are individually adjustable and/or a parameter indicative of the current flow in each contact portion may be determined. Moreover, for precise control of the currents, means are provided for monitoring the currents.

Abstract: The object of the present invention is to provide a plating method capable of planarization process of high quality in comparison with the conventional plating method and also provide a plating device and a plating system adopting the plating method of the invention. In the plating method and device, an object 10 to be processed and an electrode plate 20 are dipped in a solution including objective metal ions and a forward current is supplied between the object and the electrode plate to educe a metal on the surface of the object. After forming a plating film on the object excessively, a backward current is supplied between the object 10 and the electrode 20 to uniformly remove at least part of superfluous plating film.

Abstract: An apparatus and method for the indirect determination of concentrations of additives in metal plating electrolyte solutions, particularly organic additives in Cu-metalization baths for semiconductor manufacturing. Plating potentials between the reference and test electrodes are measured and plotted for each of the solution mixtures, and data are extrapolated to determine the concentration of the additive in the sample. A multi-cycle method determines the concentration of both accelerator and suppressor organic additives in Cu plating solution in a single test suite.

Abstract: A method and system are disclosed for plating objects. At least one aspect associated with the object plating is monitored to determine the amount of at least one byproduct created during the plating and/or the reduction in the amount of at least one plating component. Based on this monitored aspect, an adjustment is made to the flow rate of substances added to a plating cell and/or the flow rate of used plating substances drained from the plating cell. The used plating substances are purified to remove at least some of the byproduct and then the purified plating substances are combined with at least one component before passing back into the plating cell to reuse at least some of the plating substances. The method and system could be used during the plating of semiconductor wafers with copper.

Abstract: A plating analysis method is disclosed for electroplating in a system in which resistance of an anode and/or a cathode cannot be neglected. This method comprises giving a three-dimensional Laplace's equation, as a dominant equation, to a region containing a plating solution; discretizing the Laplace's equation by the boundary element method; giving a two-dimensional or three-dimensional Poisson's equation dealing with a flat surface or a curved surface, as a dominant equation, to a region within the anode and/or the cathode; discretizing the Poisson's equation by the boundary element method or the finite element method; and formulating a simultaneous equation of the discretized equations to calculate a current density distribution i and a potential distribution &phgr; in the system. The method can obtain the current density and potential distributions efficiently for a plating problem requiring consideration for the resistance of an electrode.

Abstract: A device for detecting an end point of electro-plating comprises a mandrel having a substrate and a patterned conductive layer with a main conductive area and an insulated conductive area on the substrate, an insulation region interposed between the main conductive area and the insulated conductive area, and a sensor electrically connected to the insulated conductive area for detecting a signal which indicates the end point of electro-plating.

Abstract: An electroplating apparatus and method that can detect the film thickness of a plated film, which is being deposited on the surface, to be plated, of a substrate, consecutively in real time, thereby enabling the detection of the end point of plating. The electroplating apparatus for plating a substrate by filling a plating solution between the substrate held by a substrate holding portion and an anode, and applying a voltage between the substrate and the anode, includes at least one of a voltage monitor for monitoring the voltage applied between the substrate and the anode, thereby detecting the end point of the electroplating, and a current monitor for monitoring an electric current that flows through a detection circuit, which is formed by connecting at least two cathode electrodes and to which a constant voltage is applied, thereby detecting the end point of the electroplating.

Abstract: A single delivery channel is formed by, and between, inner wall 2 and baffle 3. Electrolyte 5 is pumped up the interior of channel 1 and is directed onto substrate 4 being a cathode maintained at −10 volts. The upper part of the inner wall 2 of channel 1 forms the anode such that electrote is forced between the substrate and the upper horizontal surface of the anode 6. A second baffle 7 is provided in order to assist in collecting and removing electrolyte 5 after impingement with substrate 4, possible for re-use. Contact between the electrolyte 5 and substrate 4 is optimised by providing the electrolyte with a swirling motion as it passes up channel 1. Anode 6 is a solid conducting bar 10, alternatively it is formed of solid rods 11 nor tubes 12.

Abstract: An electroplating system for plating at least one metal on at least one substrate. At least one plating tank contains a plating solution including the at least one metal to be plated on the at least one substrate. At least one anode is arranged in the at least one plating tank. The at least one anode is at least partially immersed within the plating solution during plating of the at least one metal. At least one cathode includes at least one workpiece portion in contact with the at least one substrate and at least one thief portion arranged in the vicinity of at least one portion of the at least one substrate for controlling plating of the at least one metal on the at least one portion of the at least one substrate. At least one power supply is connected to the at least one cathode. At least one controller separately controls a flow of power to the at least one workpiece portion of the cathode and the at least one thief portion of the cathode.

Abstract: Methods and apparatus are used for triggering and controlling an initial induction period in which a substrate is immersed in an electrochemical bath prior to actual electrochemical processing. This is accomplished by sensing a change in cell potential upon immersion of the substrate or a counter electrode in an electrochemical bath. Appropriate logic then holds the cell potential or current at a fixed value for a defined delay period. After that period ends, the logic allows the cell potential or current to increase to a level where electrochemical processing begins.

Abstract: Methods for electroplating metal can include passing an electrical current through a conductive surface and an electroplating solution adjacent the conductive surface. An electroplating voltage for the conductive surface and the electroplating solution can be determined based on the electrical current through the conductive surface and the electroplating solution adjacent the conductive surface. The determined electroplating voltage can then be maintained while electroplating the metal from the electroplating solution on the conductive surface. Related systems are also discussed.

Abstract: A device for detecting an end point of electro-plating comprises a mandrel having a substrate and a patterned conductive layer with a main conductive area and an insulated conductive area on the substrate, an insulation region interposed between the main conductive area and the insulated conductive area, and a sensor electrically connected to the insulated conductive area for detecting a signal which indicates the end point of electro-plating.