Abstract: A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive pattern and an outer layer material during manufacturing of a printed circuit board, resulting in the manufacturing being highly simplified. The liquid etchant includes a main component containing an oxo acid such as sulfuric acid and a peroxide such as hydrogen peroxide. Also, the liquid etchant includes an auxiliary component containing a tetrazole such as 5-aminotetrazole or the like, or a 1,2,3-azole. The liquid etchant permits a copper surface to be roughened in an acicular manner.

Abstract: An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H2SO4). These acids can be used in the ratio of 1:3 to 3:1 HF:H2SO4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H2SO4 can be provided as “semiconductor grade” acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H2SO4.

Abstract: A method for treating the surface of a stainless steel product for a fuel cell containing, in wt %, 0.15% or less of C, 17 to 36% of Cr, 0.005 to 3.5% of B, which comprises the first step of forming in advance a passive film with an oxidizing acid on the surface of the stainless steel product, the second step of allowing an aqueous acid solution to corrode the passive film, to thereby project one or more of a M23C6 type carbide, a M23(C, B)6 type borocarbide and M2B type boride, which are inclusions having good electroconductivity, the third step of forming a passive coating film with an oxidizing acid on the surface of the steel product except that of the inclusion above projected, and the fourth step of washing with water and drying.

Abstract: The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base material of purity being 95 wt % or higher. Such ceramic members may be produced by performing the surface of a dense ceramic base material with a corrosion treatment in an acid etchant, the dense ceramic base material having purity of 95 wt % or higher and exceeding 90% of a theoretical density, whereby ceramic grains existing on the surface or its vicinity of the base material are formed on the surface thereof with a plurality of protrusions.

Abstract: A method of spiking a mixed acid liquid in a reactor is performed under three modes of control, a based-on-charge mode control, a based-on-time mode control, and a based-on-time-and-charge mode control. In the based-on-charge mode control, spike timing and spiking amount of an acid liquid are set for each lot of product. In the based-on-time mode control, the spike timing and the spiking amount of the acid liquid are set for each timing point. In the based-on-time-and-charge mode control, the spike timing and the spiking amount of an acid liquid are set for each lot of product and each timing point. Thereby, a concentration of the mixed acid liquid is controlled at a targetlevel.

Abstract: A method and associated structure for increasing the rate at which a chromium volume is etched when the chromium body is contacted by an acid solution such as hydrochloric acid. The etch rate is increased by a metallic or steel body in continuous electrical contact with the chromium volume, both of which are in continuous contact with the acid solution. At a temperature between about 21° C. and about 52° C., and a hydrochloric acid concentration (molarity) between about 1.2 M and about 2.4 M, the etch rate is at least a factor of about two greater than an etch rate that would occur in an absence of the steel body. In one embodiment, the chromium volume is a chromium layer that rests upon a conductive layer that includes a metal such as copper, wherein the acid solution is not in contact with the conductive layer.

Abstract: Substantially transparent electrodes are formed on a substrate by a process including forming on the substrate, in order, a bottom high index layer, a metallic conductive layer, and a top high index layer with a conductivity of at least about 400 ?/square; and chemically etching the bottom high index layer, the top high index layer and the conductive layer to form discrete electrodes in the metallic conductive layer.

Abstract: A plasma-resistant member for a semiconductor manufacturing apparatus, which can reduce the contamination level on a semiconductor wafer. The contents of Fe, Ni, Cr and Cu are made lower than 1.0 ppm respectively within a depth of at least 10 ?m from surface in a plasma-resistant member.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Abstract: A solution comprising potassium hydrogen peroxymonosulfate containing an elevated level of KHSO5 and having a weight ratio of SO5 to SO4 of greater than 1.0:1, and its use in microetching metal substrates is disclosed.

Abstract: Methods of bonding glass and silicon-containing articles are disclosed. Bonding is achieved without use of adhesives or high temperature fusion. A wide variety of glass and silicon-containing articles may be bonded by the methods of the invention.

Abstract: A polishing composition for a substrate for a magnetic disk, which comprises: (a) a polishing accelerator composed of at least one compound selected from the group consisting of malic acid, glycolic acid, succinic acid, citric acid, maleic acid, itaconic acid, malonic acid, iminodiacetic acid, gluconic acid, lactic acid, mandelic acid, crotonic acid, nicotinic acid, aluminum nitrate, aluminum sulfate and iron(III) nitrate, (b) an edge sagging preventive agent composed of at least one compound selected from the group consisting of a polyvinylpyrrolidone, a polyoxyethylene sorbitan fatty acid ester and a polyoxyethylene sorbit fatty acid ester, (c) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide and silicon carbide, and (d) water.

Abstract: A linear groove is formed in a glass sheet along a programmed cut line that is set for the glass sheet, and pressure is applied locally to an end of the groove. The pressure is not applied equally uniformly to the whole groove but applied locally to the end of the groove, where an initial crack is induced by the pressure applied thereto. The initial crack is guided by the groove so that the cracking force is propagated inductively along the groove. Distribution of stress in the glass corresponding to the cracking force thus propagated is concentrated locally to a face intersecting orthogonally to the surface of the glass sheet. The face to which the stress is concentrated intersects substantially orthogonally with the surface of the glass sheet. The glass sheet manufactured in this manner can be utilized effectively as a material of a PDP.

Abstract: A method of cleaning damaged layers and polymer residue on semiconductor devices includes mixing HF and ozone water in a vessel to form a solution of HF and ozone water, and dipping a semiconductor device in the vessel containing the solution of HF and ozone water. Preferably, ozone water is subsequently introduced into the vessel to replace the solution of HF and ozone water in the vessel.

Abstract: A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer.

Abstract: The present invention relates to a chemical milling solution and a chemical milling process for removing a desired depth of material from metal parts. The milling solution contains nitric acid, hydrofluoric acid, a wetting agent, such as a surfactant, dissolved titanium, and the balance water. The solution is maintained at a temperature in the range of from about 110° F. to about 130° F. The metal part to be milled is immersed in the milling solution for a time sufficient to remove a desired depth of material from at least one surface of the part.

Abstract: The invention includes semiconductor processing methods, including methods of forming capacitors. In one implementation, a semiconductor processing method includes providing a semiconductor substrate comprising a layer comprising at least one metal in elemental or metal alloy form. The metal comprises an element selected from the group consisting of platinum, ruthenium, rhodium, palladium, iridium, and mixtures thereof. At least a portion of the layer is etched in a halogenide, ozone and H2O comprising ambient.

Abstract: The invention provides a titanium composite material comprising a bonded laminate having a layer of macromolecular material bonded to the modified surface of a titanium sheet or a titanium alloy sheet, and a process for preparing a titanium composite material, the process comprising the step of bonding a macromolecular material to a titanium sheet or a titanium alloy sheet having a modified surface to be bonded.

Abstract: Polyacetal articles are etched to prepare the surface for subsequent treatments, in particular plating and painting, by immersing the articles in a mixed acid bath containing the following four acids and water in the following quantities and proportions:

Abstract: A wear resistance coated bell atomizer (32) and method for making same. The coating applied to the outer surface of a bell cup (36) of the bell atomizer (32) is preferably a silicon-doped amorphous carbon coating. This silicon-doped amorphous carbon coating significantly increases the usable life of a bell cup (36) in a bell atomizer paint system (10) by limiting the effects of abrasive materials on the wearable surfaces of the bell cup (36), including the top serrated edges (46), which may negatively affect the performance of uncoated bell atomizer spray equipment.

Abstract: Metal oxide films are etched with a metal and an etch liquid containing an acid and a metal penetration control agent.

Abstract: A method is provided for cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer exposing the first metal layer. Next, a post-etching cleaning step is carried out to clean the dual damascene opening using a fluorine-based solvent. Then, an argon gas plasma is sputtered to clean the dual damascene opening before a second metal layer fills in the dual damascene opening.

Abstract: A method of removing a portion of a molding compound encapsulant from around an integrated circuit die having copper-technology (CT) does not damage or significantly remove the copper. Fuming nitric acid and fuming sulfuric acid are mixed at a ratio of between 3:1 to 6:1 and heated to a relatively low temperature such as sixty degrees Celsius or less. In one form, a ratio of 4:1 and a temperature of fifty degrees Celsius are time efficient for removing a molding compound used as the encapsulant. The heated mixed acids are applied to the encapsulated integrated circuit in an etch chamber and the encapsulant is removed without significant reduction of the copper.

Abstract: In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before receiving another treatment fluid.

Abstract: A method for producing a Si—SiC member for heat treatment of semiconductor, which is suitable for heat treatment of a semiconductor wafer with a large diameter and capable of reducing the contamination of the semiconductor wafer as much as possible is provided. Further, a method for producing a Si—SiC member for heat treatment of semiconductor capable of reducing the contamination of the semiconductor wafer as much as possible and causing no slip is provided. This method comprises the first step of kneading a SiC powder having a total metal impurity quantity of 0.2 ppm or less with a molding assistant; the second step of forming a compact from the kneaded raw material; the third step of calcining the compact; the fourth step of purifying the calcined body; and the fifth step of impregnating the purified body with silicon within a sealed vessel provided in a heating furnace body.

Abstract: A method of cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer, exposing the first metal layer. Then, a post-etching cleaning step is carried out to clean the dual damascene opening, and there are two types of cleaning methods. The first method uses a fluorine-based solvent to clean the dual damascene opening. An alternative cleaning method uses a hydrogen peroxide based solvent at a high temperature, followed by a hydrofluoric acid solvent cleaning step. Then, an argon gas plasma is sputtered to clean the dual damascene opening before a second metal layer fills in the dual damascene opening.

Abstract: The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further treatment of the surface substantially in the absence of unreacted oxygen.

Abstract: The object of the present invention is to provide a copper clad laminate with a copper-plated circuit layer, and a method for manufacturing a printed wiring board that excels the conventional ones in the aspect ratio of a circuit pattern when processed to a printed wiring board comprising a fine-pitch circuit. The object of the present invention is achieved by manufacturing a printed wiring board with the use of a copper clad laminate with a copper-plated circuit layer characterized by a copper-plated circuit layer and an outer-layer copper foil layer that satisfied the relationship in a case where a specific etchant is used, the R v value (Vsc/Vsp), which is the ratio of the dissolution rate (Vsp) of deposited copper that constitutes said copper-plated circuit layer to the dissolution rate (Vsc) of copper that constitutes said outer-layer copper foil layer, is 1.0 or more.

Abstract: A method of rinsing an electronic substrate recognizes that adding a buffer to a rinsing fluid eliminates fluctuations in the amount of residues on an electronic substrate, and a buffered rinsing fluid is prepared by (a) providing water from a water source; (b) deionizing the water to produce deionized water; (c) adding a buffer to the deionized water at a concentration effective to eliminate fluctuations in the amount of residues on the electronic substrate. The electronic substrate is rinsed with the buffered rinsing fluid.

Abstract: Methods, compositions, and apparatus are provided for planarizing conductive materials disposed on a substrate surface by an chemical polishing technique. In one aspect, a substrate having conductive material disposed thereon is disposed on a substrate support and exposed to a composition containing an oxidizing agent and an inorganic etchant. The substrate is planarized by the composition without the presence of mechanical abrasion. The substrate may optionally be rotated, agitated, or both during exposure to the composition. The method removes conductive materials forming protuberances on the substrate surface at a higher rate than conductive materials forming recesses on the substrate surface.

Abstract: In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.

Abstract: A method for pattern-etching thick alumina layers in the manufacture of thin film heads (TFH) by using compatible metallic mask layers and a wet chemical etchant. The deep alumina etching facilitates a studless TFH device where the coil and bonding pads are deposited and patterned simultaneously, and vias are later etched through the alumina overcoat layer to expose the bonding pads. The method also enables the etching of scribe-line grooves of street and alleys across the wafer for sawing and machining of sliders. These grooves eliminate most alumina chipping due to stress and damage introduced by the sawing and machining operations. Similarly, pattern-etching of the alumina undercoat facilitates the formation of precise craters for recessed structures. These can improve planarity and alleviate problems related to adverse topography and elevated features of TFH devices.

Abstract: A U-shaped groove is formed in a glass sheet along a cutting line and the sheet is cut by breaking along the groove. The groove is formed by heating a sheet portion including the cutting line by a laser beam, cooling it to lower its density, and etching that portion to dissolve it. Every surface exposed by cutting the sheet has a pair of edges which are properly beveled and rounded.

Abstract: A method for etching a nickel-vanadium alloy is described. The etching of the nickel-vanadium alloy is conducted using an etchant that comprises sulfuric acid. Further, the etching rate of the nickel-vanadium alloy is controlled based on the electrolytic reaction between the etchant and the nickel-vanadium alloy thin film.

Abstract: A processing solution preparation and supply apparatus includes a dissolving preparation bath to which a material powder and ultrapure water are supplied. This dissolving preparation bath is connected to a substrate processing apparatus via a pipe, and a processing solution prepared from the material powder on-site is supplied to the processing apparatus. To reduce an increase in the microorganism concentration in the ultrapure water, this ultrapure water is circulated substantially constantly. This suppresses deterioration and concentration fluctuations of a processing solution for use in processing of a semiconductor substrate, when this processing solution is supplied to the use side. This also reduces particles and improves the economical efficiency.

Abstract: The invention includes a method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising NO3−, F− and one or more organic acid anions having carboxylate groups. The invention also includes a semiconductor processing method of forming an opening to a copper-containing material. A mass is formed over a copper-containing material within an opening in a substrate. The mass contains at least one of an oxide barrier material and a dielectric material. A second opening is etched through the mass into the copper-containing material to form a base surface of the copper-containing material that is at least partially covered by particles comprising at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a solution comprising nitric acid, hydrofluoric acid and one or more organic acids to remove at least some of the particles.

Abstract: A polishing composition comprising: (a) colloidal silica having a positively charged surface, (b) colloidal silica having a negatively charged surface, (c) at least one acid selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid and malonic acid, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole, tolyltriazole and their derivatives, and (e) water.

Abstract: An implantable prosthesis, for example a stent, is provided having one or more micropatterned microdepots formed in the stent. Depots are formed in the prosthesis via chemical etching and laser fabrication methods, including combinations thereof. They are formed at preselected locations on the body of the prosthesis and have a preselected depth, size, and shape. The depots can have various shapes including a cylindrical, a conical or an inverted-conical shape. Substances such as therapeutic substances, polymeric materials, polymeric materials containing therapeutic substances, radioactive isotopes, and radiopaque materials can be deposited into the depots.

Abstract: A method of manufacturing a glass substrate for a magnetic disk. The method includes the step of scrub-etching the glass substrate using a pad in the presence of an acid treatment solution. As the acid treatment solution, hydrofluoric acid is used in a range of 0.01 to 1 wt %. The scrub-etching step is performed at temperatures ranging from 5 to 60° C. for 1 second to 300 seconds. The method produces a substrate that is substantially free of asperity.

Abstract: The present invention relates to a chemical milling solution and a chemical milling process for removing a desired depth of material from metal parts. The milling solution contains nitric acid, hydrofluoric acid, a wetting agent, such as a surfactant, dissolved titanium, and the balance water. The solution is maintained at a temperature in the range of from about 110° F. to about 130° F. The metal part to be milled is immersed in the milling solution for a time sufficient to remove a desired depth of material from at least one surface of the part.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: A reaction byproduct which is generated when a ferro-dielectric material film is etched is removed without giving adverse effect on the semiconductor element. After the etching of the ferro-dielectric material film, a wetting process may performed using an aqueous solution of phosphoric acid. After the ferro-dielectric material film is etched using the resist as the mask, the wetting process is also performed using the aqueous solution of phosphoric acid before and after the ashing of resist.

Abstract: A method of forming a nano-supported sponge catalyst (10) on a substrate (12) is comprised of depositing an active catalytic metallic element (16) on the substrate (12) and depositing a structural metallic element (18) with the active catalytic metallic element (16) to form a mixed metal alloy layer (14). The method is further comprised of etching the mixed metal alloy layer (14) with an etchant to oxidize the active catalytic metallic element (16) and the structural metallic element (18) and to remove at least a portion of the structural metallic element (18) from a first sub-layer of the mixed metal alloy layer (14). The first sub-layer of the mixed metal alloy layer (14) is porous and comprised of nano-particles of the active catalytic metallic element (16) that are supported by a metal oxide structure derived from the structural metallic element (18).

Abstract: There is provided an aqueous dispersion for CMP with an excellent balance between chemical etching and mechanical polishing performance. The aqueous dispersion for CMP of the invention is characterized by comprising an abrasive, water and a heteropolyacid. Another aqueous dispersion for CMP according to the invention is characterized by comprising an abrasive, water, a heteropolyacid and an organic acid. Yet another aqueous dispersion for CMP according to the invention is characterized by comprising colloidal silica with a primary particle size of 5-100 nm, water and a heteropolyacid. Preferred for the heteropolyacid is at least one type selected from among silicomolybdic acid, phosphorotungstic acid, silicotungstic acid, phosphoromolybdic acid and silicotungstomolybdic acid. Preferred for the organic acid is at least one selected from among oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, phthalic acid, malic acid, tartaric acid and citric acid.

Abstract: A process and composition for treating a metal surface to increase its surface roughness for subsequent adhesion to a polymer layer are disclosed. The composition includes hydrogen peroxide, inorganic acid, at least two corrosion inhibitors.

Abstract: A simple surface treatment process is provided which offers a high performance surface for a variety of applications at low cost. This novel surface treatment, which is particularly useful for Ti-6Al-4V alloys, is achieved by forming oxides on the surface with a two-step chemical process and without mechanical abrasion. First, after solvent degreasing, sulfuric acid is used to generate a fresh titanium surface. Next, an alkaline perborate solution is used to form an oxide on the surface. This acid-followed-by-base treatment is cost effective and relatively safe to use in commercial applications. In addition, it is chromium-free, and has been successfully used with a sol-gel coating to afford a strong adhesive bond that exhibits excellent durability after the bonded specimens have been subjected to a harsh 72 hour water boil immersion. Phenylethynyl containing adhesives were used to evaluate this surface treatment with a novel coupling agent containing both trialkoxysilane and phenylethynyl groups.

Abstract: The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base material of purity being 95 wt % or higher. Such ceramic members may be produced by performing the surface of a dense ceramic base material with a corrosion treatment in an acid etchant, the dense ceramic base material having purity of 95 wt % or higher and exceeding 90% of a theoretical density, whereby ceramic grains existing on the surface or its vicinity of the base material are formed on the surface thereof with a plurality of protrusions.

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.