Abstract: A method for manufacturing a perforated substrate includes forming a through-hole extending through a substrate from a first surface to a second surface opposite the first surface; forming a film on the first surface, a sidewall of the through-hole, and the second surface; forming a resist on the first surface; patterning the resist such that the resist closes an opening of the through-hole in the first surface; etching the film on the first surface using the resist as a mask; before the etching step, forming an inspection member on the second surface such that the inspection member closes an opening of the through-hole in the second surface; and determining whether there is a film patterning defect or a flaw that causes a film patterning defect.

Abstract: A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Abstract: An embedded electronics package and method of manufacture includes a support substrate, a power semiconductor component coupled to a first side of the support substrate, and a logic semiconductor component coupled to a second side of the support substrate, opposite the first side. A first insulating material surrounds the logic semiconductor component. A logic interconnect layer is electrically coupled to the logic semiconductor component by at least one conductive micro-via extending through a portion of the first insulating material. A power interconnect layer is electrically coupled to the power semiconductor component by at least one conductive macro-via extending through a thickness of the support substrate. The power interconnect layer is thicker than the logic interconnect layer.

Abstract: A capacitor component includes a body with a plurality of first and second internal electrodes alternately stacked with dielectric layers interposed therebetween. First and second connection electrodes extend in a thickness direction of the body and are respectively connected to the first and second internal electrodes. First and second lower electrodes are on a lower surface of the body and are respectively connected to the first and second connection electrodes.

Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.

Abstract: A conductive paper electrode includes a paper, a carbon powder layer, a graphite layer and a nanostructural layer. The carbon powder layer is positioned over the paper. The graphite layer is positioned over the carbon powder layer. The nanostructural layer is positioned over the graphite layer. An electrochemical capacitor includes two conductive paper electrodes and an electrolyte interposed therebetween.

Abstract: The present invention relates to an electrode having a multilayer nanomesh structure using single-crystalline copper and a method for manufacturing same, the electrode comprising: a substrate; a single-crystalline copper electrode layer formed on the substrate and having a hive-shaped pattern with a nano-sized line width; and a metal oxide layer formed on the single-crystalline copper electrode layer, this providing an electrode having excellent optical transmittance, low electrical sheet resistance, and excellent mechanical stability. The present invention is technically characterized by an electrode having a multilayer nanomesh structure using single-crystalline copper, the electrode comprising: a substrate; a single-crystalline copper electrode layer formed on the substrate and having a hive-shaped pattern with a nano-sized line width; and a metal oxide layer formed on the single-crystalline copper electrode layer.

Abstract: A method for producing a piezoelectric device includes a laminate formation step in which a laminate including a piezoelectric thin film, a support substrate, a metal layer, and a silicon oxide film respectively stacked on both of an upper surface and a lower surface of the metal layer interposed between the piezoelectric thin film and the support substrate is formed, a semi-conducting layer formation step in which a semi-conducting layer is formed by oxidizing the metal layer, and a functional electrode formation step in which a functional electrode that is electro-mechanically coupled to the piezoelectric thin film is formed on a first principal surface of the piezoelectric thin film. The semi-conducting layer is a layer composed of a mixture of a metal constituting the metal layer and an oxide thereof, or a layer composed of a semiconductor which is an oxide of a metal constituting the metal layer.

Abstract: Provided is an anode active material for a secondary battery and a method of fabricating the anode active material. A silicon-based active material composite according to an embodiment of the inventive concept includes silicon and silicon oxide obtained by oxidizing at least a part of the silicon, and an amount of oxygen with respect to a total weight of the silicon and the silicon oxide is restricted to 9 wt % to 20 wt %.

Abstract: A laminated substrate includes: a first substrate; a second substrate having a through-hole; a third substrate; a first adhesive layer bonding a rear surface of the first substrate and a front surface of the second substrate; a second adhesive layer bonding a rear surface of the second substrate and a front surface of the third substrate; a first post penetrating through the first adhesive layer, electrically connecting the first substrate to the second substrate, and made of an alloy of a high melting point metal and a low melting point metal; a second post penetrating through the second adhesive layer, electrically connecting the second substrate to the third substrate, and made of an alloy of the high melting point metal and the low melting point metal; and an electronic component fixed to the front surface of the third substrate and disposed in the through-hole of the second substrate.

Abstract: The invention discloses a package structure with at least one portion of a first conductive element disposed in a through-opening of a first substrate. A conductive structure is disposed on the first substrate and the first conductive element, wherein the conductive structure is electrically connected to the first substrate and said at least one first I/O terminal of the first conductive element. The conductive structure comprises at least one of a second conductive element, a second substrate or a conductive pattern.

Abstract: The present disclosure relates to a Wafer-Level-Packaged (WLP) Bulk Acoustic Wave (BAW) device that includes a BAW resonator, a WLP enclosure, and a surface mount connection structure. The BAW resonator includes a piezoelectric layer with an opening and a bottom electrode lead underneath the piezoelectric layer, such that a portion of the bottom electrode lead is exposed through the opening of the piezoelectric layer. The WLP enclosure includes a cap and an outer wall that extends from the cap toward the piezoelectric layer to form a cavity. The opening of the piezoelectric layer is outside the cavity. The surface mount connection structure covers a portion of a top surface of the cap and extends continuously over a side portion of the WLP enclosure and to the exposed portion of the bottom electrode lead through the opening of the piezoelectric layer.

Abstract: The invention provides a manufacturing method for flexible printed circuit board, by liquefying the flexible insulating material and the metal material, coating the liquefied materials and solidifying the coated layers to form respectively the flexible insulating layer and the anti-EMI layer of the anti-EMI structure. As such, an adhesive layer is eliminated to achieve reducing the thickness of the flexible insulating layer and the anti-EMI layer and the material consumption, resulting in reduced production cost, reduced thickness of the flexible printed circuit board with anti-EMI structure, and improved quality.

Abstract: The present invention provides a porous medium with increased hydrophobicity and a method of manufacturing the same, in which a micro-nano dual structure is provided by forming nanoprotrusions with a high aspect ratio by performing plasma etching on the surface of a porous medium with a micrometer-scale surface roughness and a hydrophobic thin film is deposited on the surface of the micro-nano dual structure, thus significantly increasing hydrophobicity. When this highly hydrophobic porous medium is used as a gas diffusion layer of a fuel cell, it is possible to efficiently discharge water produced during electrochemical reaction of the fuel cell, thus preventing flooding in the fuel cell. Moreover, it is possible to sufficiently supply reactant gases such as hydrogen and air (oxygen) to a membrane electrode assembly (MEA), thus improving the performance of the fuel cell.

Abstract: A method for forming gold nanowires on a substrate is provided. The method includes a) attaching noble metal nanoparticles onto the substrate; and b) contacting the noble metal nanoparticles with an aqueous solution comprising a ligand, gold ions and a reducing agent, wherein the ligand is an organic compound having a thiol group. Gold nanowires formed by a method according to the method, and an electronic device comprising the gold nanowires are also provided.

Abstract: A pressure-sensitive touch panel, a method for manufacturing the pressure-sensitive touch panel, and a touch display screen are provided. The pressure-sensitive touch panel includes a substrate and a touch sensor and a pressure sensor arranged on the substrate. The touch sensor includes a first electrode and a second electrode, and the pressure sensor includes an upper electrode, a lower electrode and a dielectric layer arranged between the upper electrode and the lower electrode. The upper electrode and the first electrode are arranged in the same layer and formed of the same material, the lower electrode and the second electrode are arranged in the same layer and formed of the same material, and the dielectric layer is formed of an elastic insulation material.

Abstract: A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.

Abstract: A thin-film capacitor includes electrode layers stacked in a stacking direction; dielectric layers stacked between the electrode layers; an opening portion that includes a side surface penetrating at least a part of the electrode layers and at least a part of the dielectric layers in the stacking direction from a top side and a bottom surface exposing one of the electrode layers; and a wiring portion disposed in the opening portion to be separated from the side surface of the opening portion, and electrically connected to the electrode layer exposed from the bottom surface of the opening portion. The dielectric layer that is stacked immediately on the electrode layer exposed from the bottom surface of the opening portion among the dielectric layers includes an extension portion extending in the opening portion from the side surface of the opening portion to the wiring portion side.

Abstract: A manufacturing method of a substrate structure including vias includes the following steps. A substrate is provided, wherein a material of the substrate includes polyimide. An etching stop layer is formed on the substrate, wherein the etching stop layer covers two opposite surfaces of the substrate. A patterned process is performed on the etching stop layer to form a plurality of openings exposing a part of the substrate. An etching process is performed on the substrate to remove the part of the substrate exposed by the openings and form a plurality of vias.

Abstract: A sensor package includes a sensor, an encapsulation layer, a redistribution layer, a photo-imageable dielectric (PID) layer and via plugs. The encapsulation layer exposes the active surface of the sensor, and the top surface of the encapsulation layer is coplanar with the active surface of the sensor. The redistribution layer covers the top surface of the encapsulation layer and the active surface of the sensor. The PID layer covers the redistribution layer, the encapsulation layer and the active surface of the sensor. The via plugs are disposed around the sensor and through the encapsulation layer. The via plugs are electrically connected to the redistribution layer and the active surface of the sensor. The cross section of the via plug at the top surface of the encapsulation layer has a first hole diameter, and the cross section of the via plug at the bottom surface of the encapsulation layer has a second hole diameter. The first hole diameter is less than the second hole diameter.

Abstract: A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; providing a mixture of phosphoric acid and a silicon-containing material; and delivering the mixture to the surface of the wafer to remove the silicon nitride. Single wafer etching apparatuses of selectively removing silicon nitride are also provided.

Abstract: A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

Abstract: [Problem] To provide a composition capable of improving surface roughness of resist patterns, and also to provide a pattern formation method employing the composition. [Solution] The present invention provides a composition containing a particular nitrogen-containing compound, an anionic surfactant having a sulfo group, and water; and also provides a pattern formation method containing a step of applying the composition to a resist pattern beforehand developed and dried.

Abstract: A variable capacitor device that includes a dielectric layer comprising a shape-memory polymer, a first metal plate and a second metal plate, wherein the dielectric layer is sandwiched between the first and the second metal plates. The shape-memory polymer has a first thickness at a first temperature under a first external compressive load, a second thickness at a second temperature under a second external compressive load, wherein the first thickness is greater than the second thickness, the second temperature is greater than the first temperature, and the second external compressive load is greater than the first external compressive load. The shape memory polymer having the second thickness is configured to convert to the shape-memory polymer having the first thickness when sequentially subjected to the first external compressive load and the second temperature.

Abstract: An automated bonding sequence system and method for customizing a bonding sequence is provided. The method includes the steps of detecting that a first substrate is in close proximity with the a second substrate, during an optical bonding operation, wherein at least the first substrate includes an amount of adhesive for optically bonding to the second substrate, stopping an automated process of optically bonding of the optical bonding operation, in response to the detecting, recording operator feedback control signals, the operator feedback control signals being received from a controller being operated by an operator to contact the first substrate and the second substrate, analyzing the operator feedback control signals to determine a bonding sequence for automatically optically bonding the first substrate and the second substrate, and resuming, by the processor, the automated process of the optical bonding operation.

Abstract: A wavelength variable interference filter includes a fixed reflection film, a movable reflection film, and an actuator that changes a gap between the films. A wavelength of output light is first wavelength ??. A center wavelength in a target wavelength region is measurement center wavelength ?0. A peak center wavelength in reflection characteristics of the movable reflection film is first center wavelength ?1. A peak center wavelength in reflection characteristics of the fixed reflection film is second center wavelength ?2. The gap between the films when light of the first wavelength ?? is transmitted is d?(?1 , ?2). When a pair of optical films face each other, a center wavelength in reflection characteristics of the pair is the measurement center wavelength ?0, and the light of the first wavelength ?? is outputted, the gap between the pair of optical films is d?(?0, ?0). Further, d?(?1, ?2)<d?(?0, ?0).

Abstract: The present invention relates to a production method for a glassy carbon mold, and, more specifically, relates to a production method for a glassy carbon mold including the steps of: placing a mixture having a thermosetting resin, a curing agent, and a viscosity adjusting solvent between a thermosetting resin substrate and a master pattern formed by a micro-nano process; pressing either the master pattern or the thermosetting resin substrate and applying heat to form a cured thermosetting resin pattern part on the substrate; and removing the master pattern, and subjecting the substrate and the cured thermosetting resin pattern.

Abstract: Bulk materials having a kinetically limited nano-scale diffusion bond is provided. The bulk materials having a kinetically limited nano-scale diffusion bond includes transparent material, absorbent opaque material and a diffusion bond. The transparent material has properties that allow an electromagnetic beam of a select wavelength to pass there through without more than minimal energy absorption. The absorbent opaque material has properties that significantly absorb energy from the electromagnetic beam. The diffusion bond is formed by the electromagnetic beam bonding the transparent material to the absorbent opaque material. Moreover, the diffusion bond has a thickness that is less than 1000 nm.

Abstract: A cleaning liquid including hydrofluoric acid, a tetrazole compound, and water. The tetrazole compound may be represented by the following Formula (B1) in which R1 is a hydrogen atom or an organic group and R2 is a hydrogen atom, a hydroxyl group, a mercapto group, an amino group, or an organic group.

Abstract: According to a method for manufacturing a device in which an electrode of an element is electrically connected to a penetrating wire in a substrate, a structure is prepared in which the element is arranged on the first substrate having a through hole formed therein: and a second substrate is prepared which has an electroconductive seed layer formed thereon. Then, a wall part is formed on the first substrate; a seed layer is joined to a face on an element side of the structure through a bonding layer; the bonding layer is removed; and the seed layer is exposed in the inside of the opening. The inside of the wall part and the through hole is filled with a conductor, with the use of the seed layer through electrolytic plating.

Abstract: A circuit device includes a clock signal generation circuit that generates a clock signal through an oscillation circuit, and a detection circuit including a circuit operating through an operation signal based on the clock signal. The clock signal generation circuit includes a first frequency adjustment unit which is capable of adjusting an oscillation frequency before an physical quantity transducer and the circuit device are connected to each other, and a second frequency adjustment unit which is capable of adjusting the oscillation frequency in a state where the physical quantity transducer and the circuit device are connected to each other.

Abstract: Articles with graphene are selectively transparent to electromagnetic radiation. The articles transmit electromagnetic radiation in the infrared and visible light bands while inhibiting incident radio frequency radiation. The articles have high electrical conductivity and may be used in windows and domes.

Abstract: The present disclosure relates to an integrated circuit, and an associated method of formation. In some embodiments, the integrated circuit comprises a deep trench grid disposed at a back side of a substrate. A passivation layer lines the deep trench grid within the substrate. The passivation layer includes a first high-k dielectric layer and a second high-k dielectric layer disposed over the first high-k dielectric layer. A first dielectric layer is disposed over the passivation layer, lining the deep trench grid and extending over an upper surface of the substrate. A second dielectric layer is disposed over the first dielectric layer and enclosing remaining spaces of the deep trench grid to form air-gaps at lower portions of the deep trench grid. The air-gaps are sealed by the first dielectric layer or the second dielectric layer below the upper surface of the substrate.

Abstract: A method of manufacturing conductive patterns includes the steps of a) printing and curing UV curable inkjet to define a cured inkjet ink pattern on a metal sheet bonded to a non-conductive substrate; b) etching the metal sheet not covered by the cured ink pattern to expose the non-conductive substrate; and c) applying an alkaline solution to dissolve the cured inkjet ink pattern within 5 minutes.

Abstract: An object is to provide a laminated polyimide substrate, and a method for the production thereof, in which various properties are ensured and/or provided by effectively controlling changes over time under stringent conditions, while ensuring sufficient adhesion between a polyimide film and metal layer. A laminated polyimide substrate comprises a polyimide layer, an alkali-treated layer derived from the polyimide layer, and a metal layer, arranged in that order, wherein the alkali-treated layer contains an anionic functional group, and is a laminated structure having a layer containing a metal catalyst arranged on the metal layer side and a layer containing a complex of the metal catalyst arranged on the polyimide layer side.

Abstract: A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.

Abstract: According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.

Abstract: A method of forming a semiconductor structure includes forming at least one trench in a dielectric layer, forming a barrier layer on a bottom of said at least one trench, sidewalls of said at least one trench and a top surface of the dielectric layer, the barrier layer having a non-uniform thickness, and selectively thinning at least a first portion of the barrier layer using one or more cycles comprising forming an oxidized layer in the first portion of the barrier layer using a neutral beam oxidation and removing the oxidized layer using an etching process.

Abstract: The present disclosure relates to a method for the application of an antiwetting coating on at least one surface of a substrate of semiconductor material comprising the steps of: a) applying on said at least one surface a metal layer of a material chosen in the group constituted by noble metals, coining metals, their oxides and their alloys; and b) applying on said metal layer a layer of a thiol of formula R—SH, where R is a linear alkyl chain having from 3 to 20 carbon atoms and, optionally, at least one hetero-atom, for obtaining an antiwetting coating. The disclosure further regards a method for the production of a nozzle plate for ink-jet printing and to an integrated ink-jet printhead provided with a nozzle plate obtained according to the method of the disclosure.

Abstract: A touch panel and a method of manufacturing the touch panel are provided. The touch panel includes a substrate comprising a wiring area and a sensor area, a sensing pattern located on a surface of the substrate in the sensor area, and a wiring line located on the surface of the substrate in the wiring area and electrically connected to the sensing pattern. The sensing pattern includes a plurality of first fine metal lines arranged irregularly in a mesh, and a first photosensitive layer pattern residue located between at least two of the first fine metal lines.

Abstract: A method for manufacturing a resin multilayer board formed from a thermoplastic resin, which method allows for improvement in accuracy of the position of a component relative to the resin multilayer board, is provided. A method for manufacturing a resin multilayer board includes: a step of bonding a component to a pressure-sensitive adhesive layer of a pressure-sensitive adhesive sheet having the pressure-sensitive adhesive layer on a surface thereof; a step of opposing a thermoplastic resin sheet to the pressure-sensitive adhesive layer, and fixing the component bonded to the pressure-sensitive adhesive sheet and the thermoplastic resin sheet to each other by heating; a step of peeling the pressure-sensitive adhesive sheet from the component fixed to the thermoplastic resin sheet; and stacking and thermally welding a plurality of thermoplastic resin sheets including the thermoplastic resin sheet to which the component has been transferred.

Abstract: A package includes a chip formed in a first area of the package and a molding compound formed in a second area of the package adjacent to the first area. A first polymer layer is formed on the chip and the molding compound, a second polymer layer is formed on the first polymer layer, and a plurality of interconnect structures is formed between the first polymer layer and the second polymer layer. A metal-insulator-metal (MIM) capacitor is formed on the second polymer layer and electrically coupled to at least one of the plurality of interconnect structures. A metal bump is formed over and electrically coupled to at least one of the plurality of interconnect structures.

Abstract: There are provided a chip electronic component and a manufacturing method thereof, and more particularly, a chip electronic component having an internal coil structure capable of preventing the occurrence of short-circuits between coil portions and having a high aspect ratio (AR) by increasing a thickness of a coil as compared to a width of the coil, and a manufacturing method thereof.

Abstract: Embodiments of the invention provide a color filter substrate and a manufacturing method for the same, and a display device. The color filter substrate comprises a plurality of spacers. The spacer has a cross-sectional shape in a direction parallel to the color filter substrate, and the cross-sectional shape including a first supporting portion extending along a first direction and a second supporting portion extending along a second direction, which is connected to an end portion of the first supporting portion, the first direction being perpendicular to the second direction.

Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor is disclosed. The image sensor includes an optically sensitive material; a plurality of electrodes proximate the optically sensitive material, including at least a first electrode, a second electrode and a third electrode; and a charge store. The first electrode is coupled to the charge store, and the first electrode and the second electrode are configured to provide a bias to the optically sensitive material to direct photocarriers to the charge store. Other methods and apparatuses are disclosed.

Abstract: Systems, methods, and apparatus are disclosed for power transfer including a plurality of coil structures located over a ferrite element, the plurality of coil structures configured to generate a high flux region and a low flux region, the low flux region being located between the plurality of coil structures, and a tuning capacitance located directly over the ferrite element in the low flux region.

Abstract: A polarizer includes a substrate; a plurality of metal lines on the substrate, the plurality of metal lines each having a first width and a first height and being spaced apart from and parallel to each other with a first gap therebetween; and a hydrophobic coating layer on the metal line. The polarizer may be directly formed on the substrate, allowing for manufacture of light-weight and thin film structure of display device.

Abstract: To provide a technique capable of easily forming a resin opening of a desired shape. As a solution, a base is prepared which has a first surface region and a second surface region around the first surface region, and which has a wiring formed thereon. Subsequently, a resist which covers the first surface region is formed. Then, the first surface region and the second surface region are covered with a resin body such that the resist is included therein, and the resist is exposed from the resin body. After that, the exposed resist is removed, so that a resin opening that exposes the base in the first surface region is formed in the resin body.

Abstract: Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A non-polymer based sacrificial layer is used to form the actuation member of the MEMS switch while a polymer based sacrificial layer is used to form the enclosure that encapsulates the MEMS switch. The first non-polymer based sacrificial layer allows for highly reliable MEMS switches to be manufactured while also protecting the MEMS switch from carbon contamination. The polymer based sacrificial layer allows for the manufacture of more spatially efficient encapsulated MEMS switches.