Abstract: Provided are abrasive grains, an evaluation method and a wafer manufacturing method. A predetermined amount of abrasive grains is prepared as an abrasive grain sample group, the grain diameter of individual abrasive grains in the abrasive grain sample group is measured, the number of abrasive grains in the abrasive grain sample group as a whole is counted, abrasive grains having a grain diameter equal to or smaller than a predetermined reference grain e diameter criterion which is smaller than the average grain diameter of the abrasive grain sample are defined as small grains and the number of the small grains is counted, a small grain ratio is calculated as the number ratio of the small grains occupied in the abrasive grain sample group as a whole, and a determination is made as to whether or not the small grain ratio is equal to or smaller than a predetermined threshold value.

Abstract: A three-dimensional printer with detecting printing accuracy and a method for detecting printing accuracy is provided. The three-dimensional printer with printing accuracy detection includes a three-dimensional model conversion unit, a printing path locating unit, a printing path drawing unit, and a comparison unit. An actual printing path is drawn according to the real-time captured location information of a nozzle head of the three-dimensional printer and compared with a predetermined printing path, which may implement the detection of printing accuracy. The method for detecting printing accuracy may implement the accuracy detection of the three-dimensional printer and be capable of detecting the accuracy for the three-dimensional printer. The method for detecting printing accuracy also reminds an operator to check and maintain printing accuracy of the three-dimensional printer.

Abstract: A polishing method capable of obtaining an accurate thickness of a silicon layer during polishing of a substrate and determining an accurate polishing end point of the substrate based on the thickness of the silicon layer obtained. The method includes: calculating relative reflectance by dividing the measured intensity of the infrared ray by predetermined reference intensity; producing spectral waveform representing relationship between the relative reflectance and wavelength of the infrared ray; performing a Fourier transform process on the spectral waveform to determine a thickness of the silicon layer and a corresponding strength of frequency component; and determining a polishing end point of the substrate based on a point of time when the determined thickness of the silicon layer has reached a predetermined target value.

Abstract: A method suitable to reprocess a semiconductor substrate is provided. A semiconductor substrate in which a projection including a damaged semiconductor region and an insulating layer is provided in a peripheral portion of the semiconductor substrate is subjected to etching treatment for removing the insulating layer and to etching treatment for removing the damaged semiconductor region selectively with a non-damaged semiconductor region left using a mixed solution including nitric acid, a substance dissolving a semiconductor material included in the semiconductor substrate and oxidized by the nitric acid, a substance controlling a speed of oxidation of the semiconductor material and a speed of dissolution of the oxidized semiconductor material, and nitrous acid, in which the concentration of the nitrous acid is higher than or equal to 10 mg/l and lower than or equal to 1000 mg/l. Through these steps, the semiconductor substrate is reprocessed.

Abstract: Disclosed is a liquid processing apparatus capable of accurately determining a holding state of a substrate without being influenced by, for example, material or surface condition of a substrate. The liquid processing apparatus includes a substrate holding unit that holds a substrate, a camera that photographs a region where a peripheral edge portion of substrate is present when substrate is properly held by the substrate holding unit, and a control unit that determines a holding state of the substrate held by the substrate holding unit based on an image photographed by the camera.

Abstract: A computer implemented method of monitoring a polishing process includes, for each sweep of a plurality of sweeps of an optical sensor across a substrate undergoing polishing, obtaining a plurality of current spectra, each current spectrum of the plurality of current spectra being a spectrum resulting from reflection of white light from the substrate, for each sweep of the plurality of sweeps, determining a difference between each current spectrum and each reference spectrum of a plurality of reference spectra to generate a plurality of differences, for each sweep of the plurality of sweeps, determining a smallest difference of the plurality of differences, thus generating a sequence of smallest difference, and determining a polishing endpoint based on the sequence of smallest differences.

Abstract: An exemplary embodiment discloses a process for cleaning semiconductor fabrication equipment parts with non-metallic surfaces. The process optionally includes providing a semiconductor fabrication part with a non-metallic surface to be cleaned and applying a dilute aqueous solution to remove contamination from the non-metallic surface. The aqueous solution optionally includes dilute amounts of hydrofluoric acid, nitric acid and hydrogen peroxide. The dilute amounts would optionally be in the ranges of 0.5-1.5% wt. hydrofluoric acid, 0.1-0.5% wt. nitric acid and 1-10% wt. hydrogen peroxide.

Abstract: A method of removing a coating film of a substrate peripheral portion, is provided with holding and supporting a circular substrate by allowing a transfer body to transfer a rear surface of the substrate to a supporting part; removing a coating film in the shape of a ring by a predetermined width size by supplying a solvent from a solvent nozzle to a peripheral portion of the coating film formed on the surface of the substrate; transferring the substrate to an inspection module for inspecting a state of the coating film by imaging the entire surface of the substrate; detecting a removal region of the coating film based on image data acquired by the inspection module; and correcting a delivery position of a succeeding substrate with respect to the supporting part by the transfer body based on the detection result of the removal region of the coating film.

Abstract: The invention relates to a method and device for characterizing wafers during the production of solar cells. Characterizing wafers includes a) providing a wafer and carrying out a production process with the wafer for producing a solar cell or a plurality of solar cells; b) carrying out a wet chemical step with the wafer during the production process, wherein the wet chemical step decreases an influence of the wafer surface on a lifetime of charge carriers in the wafer; c) irradiating the wafer with light for creating the charge carriers in the wafer during the wet chemical step or after the wet chemical step; d) determining the lifetime of the charge carriers created in step c); and e) characterizing the wafer by means of the lifetime determined in step d).

Abstract: A composite charged particle beam apparatus includes: a FIB column irradiating a thin sample with FIB; a GIB column irradiating the thin sample with GIB; a sample stage on which the thin sample is placed; a first tilt unit for tilting the thin sample about a first tilt axis of the sample stage, the first tilt axis being orthogonal to an FIB irradiation axis and being located inside a first plane formed by the FIB irradiation axis and a GIB irradiation axis; and a second tilt unit for tilting the thin sample about an axis which is orthogonal to the FIB irradiation axis and the first tilt axis.

Abstract: The invention relates to a method for in-line measuring the active KOH concentration in a KOH etching process in which process silicon hydroxide is produced by a reduction reaction according to the formula: 2K+ (aq.)+2OH? (aq.)+2H2O+Si?2K+ (aq.)+H2SiO42? (aq.)+2H2 (g). The total concentration of KOH bath is measured by using a refractometer and the measurement result is corrected by the estimated K2H2SiO4 concentration.

Abstract: Disclosed is a liquid processing apparatus capable of accurately determining a holding state of a substrate without being influenced by, for example, material or surface condition of a substrate. The liquid processing apparatus includes a substrate holding unit that holds a substrate, a camera that photographs a region where a peripheral edge portion of substrate is present when substrate is properly held by the substrate holding unit, and a control unit that determines a holding state of the substrate held by the substrate holding unit based on an image photographed by the camera.

Abstract: Methods of determining a polishing endpoint are described using spectra obtained during a polishing sequence. In particular, techniques for using only desired spectra, faster searching methods and more robust rate determination methods are described.

Abstract: Disclosed is an end point detecting method of metal etching and a device thereof. The end point detecting method of metal etching comprises: performing scan to a metal film to acquire a proportion of a transparency area of the metal film in a scanned area; judging whether the proportion of the transparency area reaches a predetermined value or not; and confirming a current etching time of the metal film as an etching end point time when the predetermined value is reached. The device comprises an acquirement module, a judgment module and a confirmation module. The acquirement module performs scan to the metal film to acquire the proportion of the transparency area. The judgment module judges whether the proportion reaches the predetermined value or not. The confirmation module confirms the current etching time of the metal film as the etching end point time when the proportion reaches the predetermined value.

Abstract: A method of controlling a polishing operation includes polishing a substrate, during polishing obtaining a sequence over time of measured spectra from the substrate with an in-situ optical monitoring system, for each measured spectrum from the sequence of measured spectra applying a Fourier transform to the measured spectrum to generate a transformed spectrum thus generating a sequence of transformed spectra, for each transformed spectrum identifying a peak of interest from a plurality of peaks in the transformed spectrum, for each transformed spectrum determining a position value for the peak of interest in the transformed spectrum thus generating a sequence of position values, and determining at least one of a polishing endpoint or an adjustment of a pressure to the substrate from the sequence of position values.

Abstract: A method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

Abstract: A substrate holding unit of a liquid processing apparatus holds a circular substrate horizontally and rotates the substrate about a vertical axis, and a chemical liquid nozzle supplies a chemical liquid to the peripheral edge of the substrate while the substrate is being rotated in order to remove a film of the peripheral edge. An image capture unit captures an image of the peripheral edge, and a determination unit calculates an actually removed value for a removed width of the film based on a result of the image capturing and determines whether the removed width is suitable or not.

Abstract: Provided is a manufacturing method for a thermal head, including: bonding a flat upper substrate in a stacked state onto a flat supporting substrate including a heat-insulating concave portion open to one surface thereof so that the heat-insulating concave portion is closed (bonding step (SA2)); thinning the upper substrate bonded onto the supporting substrate by the bonding step (SA2) (plate thinning step (SA3)); measuring a thickness of the upper substrate thinned by the plate thinning step (SA3) (measurement step (SA4)); deciding a target resistance value of heating resistors based on the thickness of the upper substrate, which is measured by the measurement step (SA4) (decision step (SA5)); and forming, at positions of a surface of the upper substrate thinned by the plate thinning step (SA3), the heating resistors having the target resistance value determined by the decision step (SA5), the positions being opposed to the heat-insulating concave portion (resistor forming step (SA6)).

Abstract: A method of testing a contact structure including exposing a gold layer of at least one contact structure of a support structure to a solution including glacial acetic acid and nitric acid; and determining a porosity of the gold layer of at least one contact structure after the exposing.

Abstract: A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.

Abstract: The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning.

Abstract: A device and method for secure check processing in a paper check scanning device that scans the identification encoding characters on the surface of a paper check, creating an electronically digitized record of the scanned physical identification indicators, transmitting the digitized record of the indicators to a verification unit, and awaiting validation and acceptance of the digitized record. The digitized record may be validated and accepted either through an electronic processing system or manually by human validation personnel. After the digitized record has been accepted the acceptance notification is sent to the check scanner. Upon receipt of the validation and acceptance of the digitized record of the paper check, the secure check scanner moves the paper check into position and the encoded identification characters on the paper check are altered by removing the area of the paper check containing the identification characters to render the paper check unscannable.

Abstract: The invention relates to a control of etching processes of insulating substrates by means of gloss measurement. By this method a surface roughness can be achieved which leads to good adhesion of metals layers deposited in subsequent metallization steps. This method is particularly suited for the production of printed circuit boards.

Abstract: In order to allow for aligning a relative position between a transferred object and a stamper with high accuracy without providing an alignment pattern in the transferred object, there are provided: a pattern transfer method, including: when adjusting the relative position between the stamper and the transferred object, a step of detecting at least two or more edge positions of the transferred object and calculating an arbitrary point from the detected edge positions; a step of detecting a position of the stamper from an edge of the stamper or an alignment mark formed in the stamper; and a step of adjusting the relative position between the transferred object and the stamper from the arbitrary point and the position of the stamper; and an imprint device using the same.

Abstract: A mask fixture for etching an item includes: a top fixture disposed over the item, including a reservoir centered within the top fixture for containing an etchant; a bottom fixture underneath the item to be etched including a recessed surface area centered within the bottom fixture; and an etch-resistant window for holding the item to be etched, the etch-resistant window disposed entirely within the recessed surface area. In addition, a small via centered within and intersecting both the top and bottom fixtures acts as a path for a high intensity light beam.

Abstract: A method for detection of mechanical defects in a semiconductor ingot section which has at least one planar surface, and a thickness at right angles to this surface of 1 cm to 100 cm, involves scanning the planar surface by at least one ultrasound head which is coupled via a liquid coupling medium to the planar surface and, at each measurement point (x,y) producing at least one ultrasound pulse which is directed at the planar surface of the ingot section, recording the ultrasound-pulse echo as a function of time, such that an echo from the planar surface, an echo from a surface opposite the planar surface, and further echoes are detected, with the positions (xp, yp, zp) of mechanical defects in the ingot section being determined from the further echoes.

Abstract: An etching amount calculating method that can stably and accurately calculate the amount of etching even if a disturbance is added. Superposed interference light resulting from superposition of interference light of reflected light from a mask film and reflected light from the bottom of a concave portion on other interference light is received. A waveform in a predetermined time period is extracted from a superposed interference wave calculated from the superposed interference light. The period of an interference wave of the reflected light from the mask film and the reflected light from the bottom is detected from the distribution of frequencies of the extracted waveform. The steps described above are repeated while shifting the predetermined time period by a predetermined time, and the detected periods are integrated and averaged at each repetition. The etching amount of the concave portion is calculated based on the integrated and averaged periods.

Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

Abstract: A method of manufacturing a thin-film magnetic head works a part to be worked to a target length by carrying out an etching process on an object to be worked using an etching apparatus.

Abstract: Treatment of a semiconductor wafer employs: a) position-dependent measuring of a parameter characterizing the semiconductor wafer to determine a position-dependent value of the parameter over an entire surface of the semiconductor wafer, b) oxidizing the entire surface of the semiconductor wafer under the action of an oxidizing agent with simultaneous exposure of the entire surface, the oxidation rate and thus the thickness of the resulting oxide layer dependent on the light intensity at the surface of the semiconductor wafer, and c) removing of the oxide layer, the light intensity in step b) predefined in a position-dependent manner such that differences in the position-dependent values of the parameter measured are reduced by the position-dependent oxidation rate resulting in step b) and subsequent removal of the oxide layer in step c).

Abstract: An object is to provide a process for producing a glass substrate provided with transparent electrodes, whereby in the case of producing a glass substrate provided with transparent electrodes by a laser patterning method, no scratches are formed on the surface of the glass substrate, the resistance value of the formed transparent electrodes is not increased, and the surface roughness is not increased.

Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.

Abstract: A solution to an interference effect problem associated with laser processing of target structures entails adjusting laser pulse energy or other laser beam parameter, such as laser pulse temporal shape, based on light reflection information of the target structure and passivation layers stacked across a wafer surface or among multiple wafers in a group of wafers. Laser beam reflection measurements on a target link measurement structure and in a neighboring passivation layer area unoccupied by a link enable calculation of the laser pulse energy adjustment for a more consistent processing result without causing damage to the wafer. For thin film trimming on a wafer, similar reflection measurement information of the laser beam incident on the thin film structure and the passivation layer structure with no thin film present can also deliver the needed information for laser parameter selection to ensure better processing quality.

Abstract: The invention relates to a method for in-line measuring the active KOH concentration in a KOH etching process in which process silicon hydroxide is produced by a reduction reaction according to the formula: 2K+ (aq.)+2OH? (aq.)+2H2O+Si->2K+ (aq.)+H2SiO42? (aq.)+2H2 (g). The total concentration of KOH bath is measured by using a refractometer and the measurement result is corrected by the estimated K2H2SiO4 concentration.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information which can be used to control a planarizing operation.

Abstract: A method for measuring thin film thickness variations of inspected wafer that includes an upper non-opaque thin film. The method including (i) scanning the wafer and obtain wafer image that includes that includes die images each of which composed of pixels, (ii) identifying regions in a first die image and obtain first intensity measurements of the respective regions, (iii) identifying corresponding regions in a second die image and obtain second intensity measurements and the second intensity measurements to obtain signal variations between the second intensity measurements and the first intensity measurements, whereby each calculated signal variation is indicative of thickness variation between a region in the second die and a corresponding region in the first die.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: Systems, devices and methods of measuring a flow of a liquid stream for a semiconductor process are provided. The liquid stream is delivered through a liquid delivery nozzle. The nozzle is adapted to deliver the liquid stream for the semiconductor process. The free stream extends from an upstream location near the nozzle to a downstream location. The stream is marked at the upstream location and measured at the downstream location to determine the flow.

Abstract: Measuring thickness and the rate of change of thickness of a material having a surface while the material is being etched, comprising: illuminating the material with low coherence light, a portion of the which transmits through the material and a portion of which is reflected; etching the material surface and while etching, collecting a portion of the reflected light from each optical interface of the material with a low coherence light interferometer; calculating the thickness and rate of change of thickness of the material or part of the material according to the obtained interferometric data; and storing or displaying the resultant thickness and rate of change of thickness of the material. The present invention provides a unique way of calculating the thermo optic coefficient of a material. This method can be used simultaneously with etching the material so that changes to the etching rate can be made in real time.

Abstract: An acidic etcher solution for etching a substrate's surface. The acidic etcher solution includes an acid and a pH indicator, the pH indicator having at least one color transition at a pH below 7. The acidic etcher solution having an initial color at an initial pH when applied to the surface to allow determination of the evenness of the coating and the etcher having a second color at a second pH higher than the first pH wherein visual inspection allows for a determination that the etcher is substantially finished reacting.

Abstract: During the polishing of a wafer 2, the wafer 2 is illuminated with measuring light emitted from a light source 21, and the spectroscopic intensity of the reflected light is detected by a linear sensor 31. The signal processing part 11 monitors the polishing state of the wafer 2 on the basis of detection signals from the sensor 31, and detects the polishing endpoint of the wafer 2. The shutter mechanism control part 14 controls the motor 13b of the shutter mechanism 13 in response to the polishing endpoint detection signal from the signal processing part 11, and causes a light blocking member 13a to advance into the light path of the measuring light, so that the measuring light is blocked with respect to the wafer 2. As a result, the effect of the measuring light used for the monitoring of the polishing state on the object of polishing can be reduced.

Abstract: A method and an apparatus for polishing a semiconductor wafer are provided. An initial thickness of the semiconductor wafer is actually measured to obtain a measured initial thickness value. First and second inter-positions are then set or determined with reference to the measured initial thickness value. The first and second inter-positions are predetermined taking into account any variation in the initial thickness of the semiconductor wafer. A polishing process is carried out under control to a motion of a polishing pad toward a stage, on which the semiconductor pad is held.

Abstract: A method and apparatus are provided to decrease the diameter of the end of an optical fiber in order to make it possible to arrange optical fibers in an array with very high pitch. Also provided is an optical device comprising a plurality of optical fibers, each fiber formed of a body having a first diameter and an external coating, wherein end portions of the fibers have no external coating thereon and have a second diameter which is smaller than the first diameter.

Abstract: According to the present invention, a chemical and mechanical polishing apparatus (100) for a sample such as a wafer includes a built-in inspection apparatus (25) incorporated therein. The polishing apparatus (100) further comprises a load unit (21), a chemical and mechanical polishing unit (22), a cleaning unit (23), a drying unit (24) and an unload unit (26). The chemical and mechanical polishing apparatus (100) receives a sample from a preceding step (107), carries out respective processes for the sample by said respective units disposed within the polishing apparatus (100) and then transfers the processed sample to a subsequent step (109). Sample loading and unloading means and a sample transfer means are no more necessary for transferring the sample between respective units.

Abstract: We disclose methods of sorting or separating mixtures of living cells (e.g., eukaryotic, prokaryotic, mammalian, pathogenic, bacterial, viral, etc.). We perform our methods by activating cell-selective photophoric labels, which photosensitize and chemically reduce a photosensitive metal compound to form metal grains, particles or crystals. The metal adheres to the cells and forms the basis for sorting or separating different cell types. Photophoric labels may include chemiluminescent agents such as peroxidase enzymes activated with peroxidase substrates capable of luminescence. Photosensitive metal compounds may be present in a light-sensitive matrix or emulsion containing photosensitizable metal compounds, which form metal grains, particles or crystals upon exposure to a developer solution. Developer solutions are formulated to substantially allow living cells to remain viable after exposure to the developing solution.

Abstract: A novel arrangement and method for depositing evaporation control agents so as to coat immersion lithographic solutions which are employed on the surface of semiconductor wafers in connection with the etching of the surfaces of the wafer through the intermediary of an immersion lithographic process.

Abstract: Methods and apparatus for real-time dynamic analysis of a chemical etching process are provided. The apparatus comprises an optical element (36) operative to pass a beam of electromagnetic radiation at least at two points in time through a liquid phase (42) comprising at least one chemical component and including an etchant, wherein the etchant is operative to etch a solid. A detector (60) is operative to perform an ex-situ non-contact scanning detection of the electromagnetic radiation subsequent to passing through the liquid phase in a near infra-red range (700-2500 nm) at the at least at two points in time so as to detect a change in an optical property of at least one of the at least one chemical component and the etchant.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information which can be used to control a planarizing operation.

Abstract: Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.

Abstract: A method for measuring thin film thickness variations of inspected wafer that includes an upper non-opaque thin film. The method including (i) scanning the wafer and obtain wafer image that includes die images each of which composed of pixels, (ii) identifying regions in a first die image and obtain first intensity measurements of the respective regions, (iii) identifying corresponding regions in a second die image and obtain second intensity measurements of the respective regions, (iv) processing the first intensity measurements and the second intensity measurements to obtain signal variations between the second intensity measurements and the first intensity measurements, whereby each calculated signal variation is indicative of thickness variation between a region in the second die and a corresponding region in the first die.