Substrate Is Glass Patents (Class 216/97)
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Patent number: 6917741Abstract: The present invention provides methods for manufacturing microstructured optical fibers having an arbitrary core size and shape. According to one embodiment of the invention, a method of fabricating a photonic band gap fiber includes the steps of forming an assembly of stacked elongate elements, the assembly including a first set of elongate elements, the first set of elongate elements defining and surrounding a core volume, and a second set of elongate elements surrounding the first set of elongate elements, wherein the core volume defined by the first set of elongate elements has a shape that is not essentially an integer multiple of the external shape of the elongate elements of the second set of elongate elements; including the assembly in a photonic band gap fiber preform; and drawing the photonic band gap fiber preform into the photonic band gap fiber.Type: GrantFiled: November 18, 2002Date of Patent: July 12, 2005Assignee: Corning IncorporatedInventors: Curtis R. Fekety, Michael T. Gallagher, Daniel W. Hawtof, Karl W. Koch, III, Natesan Venkataraman
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Patent number: 6913702Abstract: There are provided a method of processing an amorphous material which is capable of forming surface projections of uniform height in desired positions on the amorphous material, and a magnetic disk substrate using the amorphous material. A predetermined pressure is applied to parts of a surface of an amorphous material to form high-density compressed layers, and a surface layer of the amorphous material is removed using a treatment agent that has a different removal capacity in the compressed layers and a remaining uncompressed layer, thus making the compressed layers project out. For example, the treatment agent may be an etching solution having a different etching rate in the compressed layers and the uncompressed layer.Type: GrantFiled: September 10, 2001Date of Patent: July 5, 2005Assignee: Nippon Sheet Glass Co., Ltd.Inventors: Junji Kurachi, Kazuishi Mitani, Yasuhiro Saito, Hiroyuki Inomata
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Patent number: 6911261Abstract: A method of adjusting the pH of a strengthening melt to provide an adjusted melt for use in microetching glass substrates, such as glass disk substrates for use in data storage devices. A base is added to the strengthening melt to raise its pH. A desired degree of microetch is provided on an aluminosilicate glass disk substrate, for example, by immersion for 2-4 hours at 360° C. in a melt adjusted to have a pH of 10. This single operation both strengthens and microetches the glass substrate. A slight etching of the surface of a glass substrate, i.e., microetching, improves the performance and durability of a data storage disk made from the substrate. To avoid an overly aggressive etch that can create undesirable damage to the substrate surface, an acid may be added to the melt if the pH is subsequently determined to have shifted to above an upper limit.Type: GrantFiled: June 13, 2002Date of Patent: June 28, 2005Assignee: International Business Machines CorporationInventors: Terry Lee Jensen, John William Marier, Douglas Howard Piltingsrud, Rick Allan Sprague
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Patent number: 6905627Abstract: Techniques for chemically etching a fiber tip to form a smooth fiber probe. One implementation applies a coating layer around a bare fiber to expose only an end facet of the bare fiber and then the exposed end facet is immersed into an etching liquid to be away from a meniscus interface between the etching liquid and the fiber to etch the fiber from the end facet.Type: GrantFiled: January 10, 2003Date of Patent: June 14, 2005Assignee: Academia SinicaInventors: Pei-Kuen Wei, Yi-Chun Chen
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Patent number: 6884361Abstract: A method for making a substrate for a mirror used in photolithography is described. That method comprises forming a crystalline layer on a first layer, which has a low coefficient of thermal expansion. Part of the crystalline layer is then removed to form on the first layer a second layer that has a high quality surface finish.Type: GrantFiled: September 26, 2001Date of Patent: April 26, 2005Assignee: Intel CorporationInventor: Michael Goldstein
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Patent number: 6861007Abstract: Embodiments in accordance with the present invention provide for removing organic materials from substrates, for example substrates employed in the fabrication of integrated circuits, liquid crystal displays and the like. Such embodiments also provide for forming self-limiting oxide layers on oxidizable materials disposed on such substrates where such materials are exposed to the methods of the present invention. The methods of the present invention provide for contacting substrates with a solution of ozone, water and a surfactant, the solution being effective for removing organic materials and forming self-limiting oxide layers on oxidizable materials.Type: GrantFiled: March 2, 2001Date of Patent: March 1, 2005Assignee: Micron Technology, Inc.Inventor: Terry L. Gilton
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Patent number: 6821452Abstract: An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.Type: GrantFiled: June 27, 2003Date of Patent: November 23, 2004Inventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Patent number: 6821893Abstract: There is provided a substrate for information recording media and a manufacturing method thereof, which allow an information recording medium to be driven reliably and stably even when the flying height is made lower than conventionally to cope with increased recording density of the data zone. Precision polishing is carried out on a glass substrate using a polishing agent. After the precision polishing, surface treatment is carried out using an etching liquid containing both hydrofluoric acid and a fluoride salt.Type: GrantFiled: March 25, 2002Date of Patent: November 23, 2004Assignee: Hoya CorporationInventors: Junji Kurachi, Kazuishi Mitani, Yasuhiro Saito
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Patent number: 6814833Abstract: Methods of bonding glass and silicon-containing articles are disclosed. Bonding is achieved without use of adhesives or high temperature fusion. A wide variety of glass and silicon-containing articles may be bonded by the methods of the invention.Type: GrantFiled: October 26, 2001Date of Patent: November 9, 2004Assignee: Corning IncorporatedInventor: Robert Sabia
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Patent number: 6808746Abstract: This invention relates to a process for the preparation of a substrate-free aligned nanotube film, comprising: (a) synthesizing a layer of aligned carbon nanotubes on a quartz glass substrate by pyrolysis of a carbon-containing material, in the presence of a suitable catalyst for nanotube formation; and (b) etching the quartz glass substrate at the nanotube/substrate interface to release the layer of aligned nanotubes from the substrate. The invention also provides a process for the preparation of a multilayer carbon nanotube film comprising depositing a substrate-free carbon nanotube film onto another nanotube film. Further, the invention provides a process for the preparation of a “hetero-structured” multilayer carbon nanotube film which includes one or more carbon nanotube layers together with layers of other materials, such as metal, semiconductor and polymer.Type: GrantFiled: January 11, 2002Date of Patent: October 26, 2004Assignee: Commonwealth Scientific and Industrial Research Organisation CampellInventors: Liming Dai, Shaoming Huang
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Patent number: 6807824Abstract: A glass etching composition free from health hazard and environmental pollution, and a frosting method using the composition for a glass surface are provided.Type: GrantFiled: December 21, 2000Date of Patent: October 26, 2004Inventor: Hiroshi Miwa
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Patent number: 6797187Abstract: Microfluidic devices are disclosed which can be manufactured using surface-micromachining. These devices utilize an electroosmotic force or an electromagnetic field to generate a flow of a fluid in a microchannel that is lined, at least in part, with silicon nitride. Additional electrodes can be provided within or about the microchannel for separating particular constituents in the fluid during the flow based on charge state or magnetic moment. The fluid can also be pressurized in the channel. The present invention has many different applications including electrokinetic pumping, chemical and biochemical analysis (e.g. based on electrophoresis or chromatography), conducting chemical reactions on a microscopic scale, and forming hydraulic actuators.Type: GrantFiled: January 24, 2003Date of Patent: September 28, 2004Assignee: Sandia CorporationInventors: Paul C. Galambos, Murat Okandan, Stephen Montague, James H. Smith, Phillip H. Paul, Thomas W. Krygowski, James J. Allen, Christopher A. Nichols, Jerome F. Jakubczak, II
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Publication number: 20040118814Abstract: An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.Type: ApplicationFiled: December 11, 2003Publication date: June 24, 2004Inventors: Seong-Su Kim, Yong-Suk Choi, Gee-Sung Chae, Gyoo-Chul Jo, Oh-Nam Kwon, Kyoung-Mook Lee, Yong-Sup Hwang, Seung-Yong Lee
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Patent number: 6746615Abstract: An in-process microelectronics device is treated by applying a heated liquid to the surface of the in-process microelectronics device, removing a portion of the liquid from the surface of the in-process microelectronics device and applying anhydrous HF gas to the surface of the in-process microelectronics device.Type: GrantFiled: September 14, 2000Date of Patent: June 8, 2004Assignee: FSI International, Inc.Inventor: Christina Ann Ellis
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Publication number: 20040074872Abstract: A method for fabricating a microelectronic fabrication employs an undoped silicate glass layer as an etch stop layer when etching a doped silicate glass layer with an anhydrous hydrofluoric acid etchant. The method is particularly useful for forming a patterned salicide blocking dielectric layer when fabricating a complementary metal oxide semiconductor device.Type: ApplicationFiled: October 22, 2002Publication date: April 22, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yen-Ming Chen, Huan-Chi Tseng, Yu-Hua Lee, Dian-Hau Chen, Chia-Hung Lai, Kang-Min Kuo
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Patent number: 6719914Abstract: The present invention relates to a method of manufacturing a piezoelectric device of high sensitivity using direct bonded quartz plate. To achieve this object, the invented method comprises the steps of covalently bonding a plurality of quartz plates, dry etching the bonded quartz plates with plasma from one side of its surfaces down to a bonded plane, and dry etching with plasma thereafter from the other side of the surfaces.Type: GrantFiled: April 26, 2002Date of Patent: April 13, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masaya Nakatani, Michihiko Hayashi, Hirofumi Tajika
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Patent number: 6706205Abstract: A semiconductor processing article is characterized by extended useful life. The article is used in a semiconductor furnace system, particularly in a low pressure chemical vapor deposition furnace for prolonged periods without requiring cleaning to remove build-up film. The semiconductor processing article is a quartz body characterized by a surface roughness having a first component with an average deviation from a first mean surface of about 2.5 to 50 microns, and a second component with an average deviation from a second mean surface of about 0.25 to 5 microns.Type: GrantFiled: February 7, 2002Date of Patent: March 16, 2004Assignee: General Electric CompanyInventors: Thomas Bert Gorczyca, Udo Heinz Retzlaff, Stephan Popp
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Patent number: 6675817Abstract: In an apparatus for etching a glass substrate according to the present invention, impurities that are attached to the surface of a glass substrate, which are formed by assembling a color filter substrate and a TFT substrate provided in the etching bath filled with etchant, are removed by using ultrasonic oscillation generated from an ultrasonic oscillator, by which a glass substrate having uniform thickness and surface is obtained.Type: GrantFiled: April 24, 2000Date of Patent: January 13, 2004Assignee: LG.Philips LCD Co., Ltd.Inventor: Yong Il Doh
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Publication number: 20030230552Abstract: A method of adjusting the pH of a strengthening melt to provide an adjusted melt for use in microetching glass substrates, such as glass disk substrates for use in data storage devices. A base is added to the strengthening melt to raise its pH. A desired degree of microetch is provided on an aluminosilicate glass disk substrate, for example, by immersion for 2-4 hours at 360° C. in a melt adjusted to have a pH of 10. This single operation both strengthens and microetches the glass substrate. A slight etching of the surface of a glass substrate, i.e., microetching, improves the performance and durability of a data storage disk made from the substrate. To avoid an overly aggressive etch that can create undesirable damage to the substrate surface, an acid may be added to the melt if the pH is subsequently determined to have shifted to above an upper limit.Type: ApplicationFiled: June 13, 2002Publication date: December 18, 2003Applicant: International Business Machines CorporationInventors: Terry Lee Jensen, John William Marier, Douglas Howard Piltingsrud, Rick Allan Sprague
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Patent number: 6652659Abstract: A method of rinsing an electronic substrate recognizes that adding a buffer to a rinsing fluid eliminates fluctuations in the amount of residues on an electronic substrate, and a buffered rinsing fluid is prepared by (a) providing water from a water source; (b) deionizing the water to produce deionized water; (c) adding a buffer to the deionized water at a concentration effective to eliminate fluctuations in the amount of residues on the electronic substrate. The electronic substrate is rinsed with the buffered rinsing fluid.Type: GrantFiled: November 30, 1999Date of Patent: November 25, 2003Assignee: Honeywell International Inc.Inventors: Glen Roeters, Raj Kumar
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Patent number: 6649078Abstract: Method and system of forming microfluidic capillaries in a variety of substrate materials. A first layer of a material such as silicon dioxide is applied to a channel etched in substrate. A second, sacrificial layer of a material such as a polymer is deposited on the first layer. A third layer which may be of the same material as the first layer is placed on the second layer. The sacrificial layer is removed to form a smooth walled capillary in the substrate.Type: GrantFiled: December 6, 2000Date of Patent: November 18, 2003Assignee: The Regents of the University of CaliforniaInventor: Conrad M. Yu
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Publication number: 20030205558Abstract: A method of manufacturing a glass substrate for displays is provided, which allows efficient and inexpensive removal of at least a reducing heterogeneous layer formed on the top surface of the glass substrate, and a glass substrate for displays manufactured by the same method. A glass substrate is prepared by the float method. The reducing heterogeneous layer formed on the top surface of the glass substrate is removed by etching using an etchant which is mainly composed of hydrofluoric acid.Type: ApplicationFiled: April 30, 2003Publication date: November 6, 2003Applicant: Nippon Sheet Glass Co., Ltd.Inventors: Sadao Kuzuwa, Nobuhiro Sakata
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Patent number: 6625864Abstract: The present invention provides a method for manufacturing an erect image, unity magnification, resin lens array by injection molding. Two injection-molded lens plates are stacked such that convexly warped sides thereof face each other or such that a convexly warped side of the lens plate whose warp is greater than that of the other lens plate faces a concavely warped side of the other lens plate, while directions of resin injection thereof are aligned so as to optically avoid the influence of molding shrinkage. Engagement spigots and engagement sockets are employed in order to align the two lens plates. The two stacked lens plates are secured by clipping of peripheral portions thereof.Type: GrantFiled: March 7, 2001Date of Patent: September 30, 2003Assignee: Nippon Sheet Glass Co., Ltd.Inventors: Hiroyuki Nemoto, Takashi Kishimoto, Kenjiro Hamanaka
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Publication number: 20030150839Abstract: As a feature of a glass substrate having at least one fine hole according to the invention, a side wall surface of the fine hole is connected to each surface of the glass substrate by a curved surface as a boundary portion between the two. As another feature of the glass substrate, a layer denatured by machining is removed from the inner wall surface of the fine hole and the boundary portion between the wall surface and each surface of the glass substrate. The fine hole is produced by: forming a fine hole in a glass substrate by machining or laser machining; and then applying liquid-phase chemical etching to surfaces of the glass substrate and the fine hole. On this occasion, it is desirable that the etching liquid used for the liquid-phase chemical etching is either of an aqueous solution of hydrofluoric acid and an aqueous mixture solution of hydrofluoric acid and ammonium fluoride.Type: ApplicationFiled: February 5, 2003Publication date: August 14, 2003Inventors: Fumitoshi Kobayashi, Katsuhide Shimmo, Naoko Hikichi
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Patent number: 6589457Abstract: An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.Type: GrantFiled: July 31, 2000Date of Patent: July 8, 2003Assignee: The Regents of the University of CaliforniaInventors: DeQuan Li, Quanxi Jia
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Publication number: 20030121885Abstract: A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/0 NH4F and 10 w/o H2O2 in water.Type: ApplicationFiled: December 19, 2002Publication date: July 3, 2003Inventors: Gomez W. Wright, Ralph B. James, Arnold Burger, Douglas A. Chinn
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Publication number: 20030110803Abstract: There is provided a method of manufacturing a glass substrate for magnetic disks, according to which circumferential direction texture can be formed without bringing about a drop in anisotropy, thus enabling coating with a magnetic recording layer having a large magnetic coercivity. In a texturing step, a tape is used while a diamond slurry is fed onto at least one main surface of a glass substrate member that has been processed into a substantially circular shape, thus forming a linear texture in a circumferential direction on the at least one main surface. In a chemical strengthening step, the mechanical strength of the glass substrate member is chemically strengthened to a level required of the glass substrate for magnetic disks. The texturing step is carried out after the chemical strengthening step.Type: ApplicationFiled: September 4, 2002Publication date: June 19, 2003Applicant: NIPPON SHEET GLASS CO., LTD.Inventors: Yasuhiro Saito, Koji Okuhata, Kazuishi Mitani, Toshiaki Hashimoto
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Patent number: 6579462Abstract: A flat display device, preferably of the PALC type, in which the plasma channels are formed by etching laterally-spaced slots in a spacer plate, attaching a thin dielectric sheet over the etched spacer plate, and bonding the etched spacer plate to a transparent substrate such that each channel is formed by the portion of the substrate between flanking walls formed by the etched slots in the spacer plate, adjacent flanking walls in the spacer plate, and the overlying portion of the thin dielectric sheet. In a modification, strengthening crossbars are formed between adjacent flanking walls.Type: GrantFiled: June 6, 2001Date of Patent: June 17, 2003Assignees: Philips Electronics North America Corporation, Tektronix, Inc.Inventors: Babar A. Khan, Henri R. J. R. Van Helleputte, Adrianus L. J. Burgmans, Karel Elbert Kuijk, Petrus F. G. Bongaerts, Jacob Bruinink, Thomas Stanley Buzak, Kevin John Ilcisin, Paul Christopher Martin
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Patent number: 6576150Abstract: An etching mask with at least one etching window is applied on a glass object consisting substantially of boron silicate glass. Subsequently, the glass object is etched through the etching window by using, for instance, HF, thereby producing trapezoidal trenches or truncated pyramidal grooves in its cross-section.Type: GrantFiled: September 27, 1999Date of Patent: June 10, 2003Assignee: Infineon Technologies AGInventor: Martin Weigert
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Patent number: 6569607Abstract: Method of fabricating microstructures on a substrate. The method comprises providing a substrate layer having a first surface with a resist layer. First selected regions of the resist layer are exposed to an environment that renders the resist layer more or less soluble in a developer solution. The resist layer is then developed in the developer solution to expose selected regions of the substrate surface. Second selected regions of the resist layer are then exposed to an environment that renders the resist layer more or less soluble in the developer solution by aligning exposure of the second selected regions to the first selected regions. The first selected regions of the substrate surface are etched. Second selected regions of the resist layer are then developed to expose the second selected regions of the substrate surface.Type: GrantFiled: May 1, 2001Date of Patent: May 27, 2003Assignee: Caliper Technologies Corp.Inventor: Richard J. McReynolds
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Patent number: 6565760Abstract: A page-wide inkjet print head is formed by assembling individual glass fiber tube sections, which are then sintered together drawn to thin or neck the diameter of the orifices, slicing the glass tube sections and depositing individual semiconductor control circuits in or approximate to the top of the glass tube sections. Ink reservoirs can supply water based ink that flows through the glass tube sections but which is held in place by capillary action. Ink is ejected by heating a semiconductor resistive element deposited into one open end of the tube section so as to cause the ink to be ejected onto a print medium.Type: GrantFiled: February 11, 2002Date of Patent: May 20, 2003Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jaime S. Hardisty, Jeremy H. Donaldson, Roger J. Kolodziej
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Patent number: 6558776Abstract: A glass substrate for liquid crystal display device includes a plurality of zig-zag type exhausting ports for exhausting the inner gas in the cells of the glass substrate to the outer region of the glass substrate when the cells are laminated to each other. Opening regions of the glass substrate except for the exhausting port are blocked by the residuum being generated when the substrate is etched by the etchant.Type: GrantFiled: October 22, 1999Date of Patent: May 6, 2003Assignee: LG.Philips LCD Co., Ltd.Inventors: Won Gyun Youn, In Jae Chung
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Patent number: 6553788Abstract: A method of manufacturing a glass substrate for a magnetic disk. The method includes the step of scrub-etching the glass substrate using a pad in the presence of an acid treatment solution. As the acid treatment solution, hydrofluoric acid is used in a range of 0.01 to 1 wt %. The scrub-etching step is performed at temperatures ranging from 5 to 60° C. for 1 second to 300 seconds. The method produces a substrate that is substantially free of asperity.Type: GrantFiled: February 22, 2000Date of Patent: April 29, 2003Assignee: Nippon Sheet Glass Co., Ltd.Inventors: Hiroshi Ikeda, Yoshihiro Matsuno, Takeo Watanabe
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Patent number: 6555017Abstract: An apparatus and method for modifying the surface of an object by contacting said surface with a liquid processing solution using the liquid applicator geometry and Marangoni effect (surface tension gradient-driven flow) to define and confine the dimensions of the wetted zone on said object surface. In particular, the method and apparatus involve contouring or figuring the surface of an object using an etchant solution as the wetting fluid and using realtime metrology (e.g. interferometry) to control the placement and dwell time of this wetted zone locally on the surface of said object, thereby removing material from the surface of the object in a controlled manner. One demonstrated manifestation is in the deterministic optical figuring of thin glasses by wet chemical etching using a buffered hydrofluoric acid solution and Marangoni effect.Type: GrantFiled: October 13, 2000Date of Patent: April 29, 2003Assignee: The Regents of the University of CalioforniaInventors: Michael C. Rushford, Jerald A. Britten
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Patent number: 6547980Abstract: A glass substrate for an information recording medium has an acid resistance represented by an etching rate of at most 45 nm/min. upon contact with a hydrofluoric acid having a temperature of 50° C. and a concentration of 0.1 weight %. The glass substrate has a recording surface having an average surface roughness Ra smaller than 0.3 nm.Type: GrantFiled: July 12, 2002Date of Patent: April 15, 2003Assignee: Nippon Sheet Glass Co., Ltd.Inventors: Junji Kurachi, Akihiro Koyama, Nobuyuki Yamamoto, Yasuhiro Saito, Kazuishi Mitani, Koichi Ataka, Yoshihiro Matsuno
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Patent number: 6547973Abstract: A method for fabricating a suspended structure including a layer of membrane material over a substrate. The suspended structure overlies a cavity in the substrate. The method starts by generating a sacrificial layer comprising a first material that can withstand temperatures typically encountered in subsequent conventional semiconductor processing steps. In the preferred embodiment of the present invention, the bond between sacrificial layer and the underlying substrate must be capable of withstanding temperatures greater than the Si—Al eutectic point. A layer of membrane material is then deposited over the sacrificial layer. The membrane material comprises a second material different from the first material. An opening is introduced in the layer of membrane material thereby exposing the sacrificial layer. A first etchant is applied to the sacrificial layer through the opening until the sacrificial layer is removed leaving a portion of the cavity.Type: GrantFiled: July 30, 1996Date of Patent: April 15, 2003Assignee: Agilent Technologies, Inc.Inventor: Leslie A. Field
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Publication number: 20030038110Abstract: A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. A nozzle or array of nozzles, optionally including a dual-orifice nozzle, delivers a high-pressure jet of machining etchant fluid to the surface of the workpiece. The machining etchant comprises a liquid or gas, carrying particulate material. The liquid may be a chemical etchant, or a solvent for a chemical etchant, if desired. The areas which are not to be etched may be shielded from the jet by a patterned mask, or the jet may be directed at areas from which material is to be removed, as in wafer thinning or direct writing, depending on the size of the desired feature or etched area.Type: ApplicationFiled: August 17, 2001Publication date: February 27, 2003Inventors: Robert Z. Bachrach, Jeffrey D. Chinn
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Patent number: 6517736Abstract: A micro-fluidic device is disclosed with a gasket layer laminated between a silicon wafer patterned with channels and a glass wafer. The gasket layer is formed in two parts. A first portion of the gasket layer is formed on the inner walls of the channels and along the channel edges. A complimentary gasket is formed on the glass wafer. The silicon wafer and the glass wafer are anodically bonded together through their respective surface to enclosed channels or portions thereof. The fluidic properties of the micro-fluidic devices are altered depending on the gasket material that is used. In the preferred embodiments of the invention, the gasket material is selected from the group consisting of silicon carbide and silicon nitride.Type: GrantFiled: October 14, 1999Date of Patent: February 11, 2003Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Anthony Flannery, Nicholas J. Mourlas
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Patent number: 6503841Abstract: The invention includes a method of etching silicon dioxide, comprising doping a layer of silicon dioxide to form a layer of doped silicon dioxide and etching the doped silicon dioxide layer with phosphoric acid.Type: GrantFiled: July 7, 2000Date of Patent: January 7, 2003Assignee: Agere Systems Inc.Inventors: Robert William Criscuolo, Charles Walter Pearce
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Patent number: 6503409Abstract: A new class of silicon-based lithographically defined nanoapertures and processes for their fabrication using conventional silicon microprocessing technology have been invented. The new ability to create and control such structures should significantly extend our ability to design and implement chemically selective devices and processes.Type: GrantFiled: May 25, 2000Date of Patent: January 7, 2003Assignee: Sandia CorporationInventor: James G. Fleming
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Patent number: 6498079Abstract: Deep profile and highly doped impurity regions can be formed by diffusing from a solid source or doped silicon glass and using a patterned nitride layer. An oxide etch stop and polysilicon sacrificial layer are left in place in the patterned regions and the dopant is diffused through those layers. The polysilicon provides sacrificial silicon that serves to prevent the formation of boron silicon nitride on the substrate surface and also protects the oxide layer during etching of the silicon glass layer. The oxide layer then acts as an etch stop during removal of the polysilicon layer. In this way, no damage done to the substrate surface during the diffusion or subsequent etch steps and the need for expensive ion implanter steps is avoided.Type: GrantFiled: July 27, 2000Date of Patent: December 24, 2002Assignee: STMicroelectronics, Inc.Inventors: Frank Randolph Bryant, Kenneth Wayne Smiley
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Patent number: 6497238Abstract: A method of manufacturing electronic devices, in particular, but not exclusively, semiconductor devices, and apparatus for carrying out such a method, in which method substrates 1, which are provided at a surface 2 with a silicon oxide-containing material 3 to be removed, are subjected, while being divided into successive batches, to a wet treatment in a bath 4 containing a solution 5 of hydrofluoric acid in water. During this wet treatment the conductivity of the solution 5 is monitored and the silicon oxide-containing material 3 is removed, thereby forming ionic components. The monitored conductivity is brought to approximately a desired conductivity at time intervals by adding hydrofluoric acid and/or water to the solution 5 inside the bath 4.Type: GrantFiled: November 27, 2000Date of Patent: December 24, 2002Assignee: Koninklijke Philips Electronics N.V.Inventor: Dirk Maarten Knotter
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Patent number: 6488861Abstract: A system of coupling optical energy in a waveguide mode, into a resonator that operates in a whispering gallery mode. A first part of the operation uses a fiber in its waveguide mode to couple information into a resonator e.g. a microsphere. The fiber is cleaved at an angle &PHgr; which causes total internal reflection within the fiber. The energy in the fiber then forms an evanescent field and a microsphere is placed in the area of the evanescent field. If the microsphere resonance is resonant with energy in the fiber, then the information in the fiber is effectively transferred to the microsphere.Type: GrantFiled: June 12, 2001Date of Patent: December 3, 2002Assignee: California Institute of TechnologyInventors: Vladimir Iltchenko, Lute Maleki, Steve Yao, Chi Wu
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Publication number: 20020174686Abstract: A process for micromachining capillaries was having circular cross-sections in glass substrates. Microchannels are isotropically etched into a flat glass substrate, resulting in a semi-circular half-channel (or a rectangle with rounded corners). A second flat glass substrate is then fusion bonded to the first substrate, producing sealed microchannels with rounded bottom corners and a flat top surface having sharp corners. The process is completed by annealing at a sufficiently high temperature (approximately 750 C.) to allow surface tension forces and diffusional effects to lower the over-all energy of the microchannels by transforming the cross-section to a circular shape. The process can be used to form microchannels with circular cross-sections by etching channels into a glass substrate, then anodically bonding to a silicon wafer and annealing. The process will work with other materials such as polymers.Type: ApplicationFiled: May 7, 2001Publication date: November 28, 2002Applicant: The Regents of the University of CaliforniaInventors: Peter Krulevitch, Julie K. Hamilton, Harold D. Ackler
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Patent number: 6478974Abstract: A method of fabricating a microfabricated filter. The method includes forming a frame structure and forming a plurality of openings through the frame structure. A permeable polysilicon membrane is formed over the plurality of openings through the frame structure. At least part of the sacrificial structure is etched with an etchant wherein the etchant passes through the permeable polysilicon membrane. The permeable polycrystal silicon membrane may have a thickness of between about 0.05 micrometers and about 0.30 micrometers.Type: GrantFiled: July 6, 1999Date of Patent: November 12, 2002Assignee: The Regents of the University of CaliforniaInventors: Kyle S. Lebouitz, Roger T. Howe, Albert P. Pisano
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Patent number: 6475403Abstract: A subcritical or supercritical water is used to selectively etch a silicon nitride film against a silicon dioxide film or to selectively etch a silicon dioxide film against a crystalline silicon region. This method is applicable to a process of forming a MISFET or a charge emitting device.Type: GrantFiled: January 30, 2001Date of Patent: November 5, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Kiyoyuki Morita
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Patent number: 6471880Abstract: Provided is a process for etching glass objects by chemical treatment. The process includes (a) at least one stage of chemical treatment of the object, and (b) at least one stage of rinsing the objects etched by the treatment of step (a) with an aqueous solution of one or more alkali metal or alkaline earth metal cation salts.Type: GrantFiled: June 9, 2000Date of Patent: October 29, 2002Assignee: Societe D'Exploitation de produits Pour les Industries Chimiques SeppicInventors: Gérard Trouve, Yves Bessoles
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Patent number: 6468932Abstract: The invention relates to Al2O3-containing and high-temperature resistant glass sliver on silica basis having a highly textile, cotton-like and voluminous character. The invention also relates to glass staple fiber products from said glass sliver and their use. The textile character and high-temperature resistance are obtained in particular by selective acid extraction. The composition of the inventive glass sliver comprises in particular SiO2 as main component and 1-5% (wt.) Al2O3 as subsidiary component.Type: GrantFiled: January 24, 2000Date of Patent: October 22, 2002Inventors: Richter Robin, Focke Thomas, Lehr Sven
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Patent number: 6461470Abstract: An apparatus for etching a glass substrate 30 includes a first bath 13 containing an etchant, at least one porous panel having a plurality of jet holes 16 in the first bath, the porous panel containing the etchant to jet the etchant against the glass substrate, a container 20 storing the etchant, and a pump 24 supplying the etchant from the container to the porous panel, the pump being connected to the container and the porous panel.Type: GrantFiled: August 5, 1999Date of Patent: October 8, 2002Assignee: L.G. Philips LCD Co., Ltd.Inventor: Woong Kwon Kim
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Publication number: 20020142191Abstract: In a glass substrate for use in a magnetic recording medium, a surface roughness of at least a principal surface of the glass substrate is measured by the use of the interatomic force microscope (AFM), Ra falls within the range between 0.2 and 2.5 nm, Rmax falls within the range between 3 and 25 nm, and Rmax/Ra falls within the range between 3 and 35.Type: ApplicationFiled: February 14, 2002Publication date: October 3, 2002Applicant: HOYA CORPORATIONInventors: Hiroyuki Sakai, Katsutoshi Ono, Syoji Matsuda