Abstract: A method and apparatus for thermally treating a substrate is provided. A thermal treatment chamber has a substrate support and a magnetically permeable rotor housed in a rotor well. An annular cover shields the rotor from the processing environment. The annular cover has a thermal stress relief joint formed therein that provides one or more mechanical degrees of freedom to allow portions of the cover to shift with thermal stresses. In one embodiment, a gap is formed in the annular cover at the point of maximum thermal stress.

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

Abstract: Provided is a mounting table structure having a replaceable heating plate by removably arranging the heating plate in a heating plate accommodating chamber. A mounting table structure is provided with a mounting table, which is arranged inside a processing chamber and mounts thereon a target object, for performing specified heat treatment to the target object, and a hollow supporting column which supports the mounting table by making the mounting table stand on a bottom portion of the processing chamber. The mounting table is provided with a heating plate having a heater composed of an electric heat source embedded in a heat-resistant material, and a heating plate accommodating chamber composed of a heat-resistant and corrosion-resistant material for removably receiving the heating plate. The heating plate accommodating container includes a container body having an opening, and a cover portion attached to the container body. Thus, the heating plate is permitted to be replaced.

Abstract: A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.

Abstract: A susceptor [1] is manufactured by providing a protruding part [8] on the joining surface of a retainer plate [4], and additionally providing a groove part [9] composed of a dovetail groove on the joining surface of a heat transfer plate [3] in a position facing the protruding part [8]. By fitting the protruding part [8] into the groove part [9] and caulking, the heat transfer plate [3] and the retainer plate [4] are conjoined.

Abstract: A bonding structure including: a ceramic member made of aluminum nitride and including a hole; a terminal embedded in the ceramic member, exposed to a bottom surface of the hole, and made of molybdenum; a brazed bond layer consisting of gold (Au) only; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of molybdenum.

Abstract: A heating unit includes: a base having an upper surface; a first heating element buried in an upper part of the base, the upper part including the upper surface, the first heating element having a flat shape almost parallel to the upper surface; and a second heating element buried in a lower part of the base and arranged in a location lower than the first heating element with respect to the upper surface, the lower part being joined to the upper part, and the second heating element having a flat shape. First and second projection patterns have an overlapping portion where the first projection pattern and the second projection pattern partially overlap each other, the first projection pattern representing the first heating element projected on the upper surface of the base, and the second projection pattern representing the second heating element projected the upper surface of the base.

Abstract: A mounting table structure arranged in a processing chamber is provided for mounting a target object to be processed on the upper surface. The mounting table structure is characterized in having a mounting table wherein a heating unit are embedded to heat the target object to perform a specified heat treatment to the target object, and a supporting column which stands on the bottom portion of the processing chamber and supports the mounting table. The mounting table structure is also characterized in that a heat-equalizing member spread in a planar direction is embedded above the heating unit in the mounting table.

Abstract: A heat treatment apparatus and associated method are provided for heating a substrate. The apparatus includes a processing chamber containing a process space, first and second substrate supports, and first and second heating sources. The first substrate support is configured to support the substrate in a spaced relationship with the first heating source to define a heat exchange gap and to transfer heat energy through the heat exchange gap to elevate a temperature of the substrate to an offset temperature below a process target temperature. The second substrate support is configured to support the substrate in a spaced relationship with a second heating source to define a heat exchange gap between the second heating source and the substrate and to transfer heat energy through the heat exchange gap to elevate the temperature of the substrate from the offset temperature to the process target temperature in controlled increments.

Abstract: Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods.

Abstract: A first heating element and a second heating element, which are capable of individually controlling temperatures thereof, are embedded in a ceramic base. Each of the first heating element and the second heating element is formed into a spiral shape so as not to contact the other from a central portion of the base to an outer circumferential portion thereof in substantially the same plane parallel to a heating surface of the base. One of the first and second heating elements includes a high heating density portion on the central portion side of the base, and a low heating density portion on the peripheral portion side of the base, and the other of the first and second heating elements includes a low heating density portion on the central portion side of the base, and a high heating density portion on the peripheral portion side of the base.

Abstract: A heater has a smooth heating surface and a recess formed on a second surface opposite to the heating surface. The recess is formed between opposite side walls in a lengthwise direction of the heater. Formation of the recess improves the electrical resistance of the heater and the opposite side walls reinforce the heater and prevent deformation of the heater when it is subjected to high temperatures in a semiconductor wafer processing device. The heater has substantially the same width along its lengthwise direction. This improves the control of heat pattern design, because the terminal end portions do not have an expanded shape.

Abstract: A heater assembly and a wafer processing apparatus using the same are provided. The heater assembly comprises a substrate, a heater, a reflector and a protective layer. The substrate has a top surface, a side surface surrounding the top surface and a trench formed on the top surface. The heater comprises a heater element accommodated within the trench and two electrodes respectively connecting two ends of the heater element and extending outside of the substrate. The reflector covers an inner surface of the trench. The protective layer covers the top surface, the side surface and the trench.

Abstract: To provide a plane heater, including a carbon wire heating element CW, in which surface arrangement density of the heating element CW in an outer area is denser than that in an inner area. A power supply terminal unit having connection wires for supplying electricity to the heating element CW is arranged in the center on the back side of a silica glass plate-like member 2. Connection wires 4a and 4b connected with the heating element CW in the inner area are connected with the heating element in the inner area in the center of the silica glass plate-like member. Connection wires 3a and 3b connected with the heating element in the outer area are extended from the center of the silica glass plate-like member toward the outer area and connected with the heating element CW in the outer area, without intersecting the heating element CW in the inner area.

Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

Abstract: In a plate for adjusting a temperature of a substrate, a body of the plate supports the substrate. A first channel and a second channel are disposed within the body of the plate. The first channel has a first inlet and a first outlet and passes therethrough a first fluid to adjust the temperature of the substrate. The second channel has a second inlet adjacent to the first outlet and a second outlet adjacent to the first inlet and passes therethrough a second fluid to adjust the temperature of the substrate. Further, the first and second channels are disposed side by side. Thus, the temperature of the substrate may be adjusted uniformly as a whole.

Abstract: There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p having a nitrogen gas permeability of 1×10?2 cm2/sec or less or being made of a compound containing a dopant formed on the protection layer 4.

Abstract: Disclosed is a method of a thermal processing including a first process and a second process. The first process between first wafer (initial wafer) W1 and second wafer (next wafer) W2 (and subsequent wafers W), comprises changing a set temperature of a heating plate from a first temperature to a second temperature which is lower than the first temperature; and initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature. The second process comprises changing the set temperature of the heating plate from the second temperature to a third temperature which is higher than the second temperature, after the first process for the first substrate is completed; and initiating a thermal processing for a second substrate when the temperature of the heating plate is changed from the third temperature to the second temperature after the temperature of the heating plate reached the third temperature.

Abstract: A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).

Abstract: A mounting apparatus includes a surface plate; a temperature control unit integrated with the surface plate; and a bottom plate integrated with the temperature control unit via a heat insulation ring, wherein a temperature of a target object held on the surface plate is capable of being controlled and the surface plate is formed of ceramic. The surface plate and the temperature control unit are coupled to each other by a first coupling member at each portion thereof except for each peripheral portion thereof such that the peripheral portion of the surface plate being not coupled thereto. The peripheral portion of the temperature control unit is coupled to the heat insulation ring by a second coupling member.

Abstract: A planar heater 1 in which a power supply terminal unit 108 which supplies an electric power is arranged on a central portion on a lower surface of a silica glass plate-like member 102. The power supply terminal unit includes small-diameter silica glass tubes 105a and 106a, which contain a connection line which supplies an electric power to a carbon heat generator and a large-diameter silica glass tube 2 which contains the small-diameter silica glass tubes 105a and 106a. A flange portion 2a is formed on a lower end of the large-diameter silica glass tube 2, and a bent portion 2b having different diameters is formed between an upper end of the large-diameter silica glass and the flange portion 2a, and the first heat shielding plates 19, 20 and 21 configured by metal plates or opaque silica glass plates are contained in the large-diameter silica glass tube below the bent portion.

Abstract: A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

Abstract: A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

Abstract: An object of the present invention is to perform temperature setting of a heating plate so that a wafer is uniformly heated in an actual heat processing time. The temperature of a wafer is measured during a heat processing period from immediately after a temperature measuring wafer is mounted on the heating plate to the time when the actual heat processing time elapses. Whether the uniformity in temperature within the wafer is allowable or not is determined from the temperature of the wafer in the heat processing period, and if the determination result is negative, a correction value for a temperature setting parameter of the heating plate is calculated using a correction value calculation model from the measurement result, and the temperature setting parameter is changed.

Abstract: An electrostatic chuck heater is provided including a base which is formed by applying conductive paste containing a binder to upper and lower surfaces of an alumina sintered body to print an electrostatic electrode and heater electrode, calcining the alumina sintered body, arranging alumina powder above the electrostatic electrode and alumina powder below the heater electrode, and pressing the alumina powder and alumina sintered body in the above state for pressure sintering. The diffusion area ratio of the conductive material near the electrostatic electrode in the dielectric layer is set to not more than 0.25%.

Abstract: A heat-treating plate has support elements projecting from an upper surface thereof. The support elements are located at apexes of equilateral triangles arranged regularly and continually. The heat-treating plate and a substrate placed on the support elements form a minute space therebetween which is sealed by a sealer. The substrate is sucked by reducing the pressure in the minute space to a negative pressure through exhaust bores. Since all the distances between adjoining support elements are equal, the substrate sags in the same amount between these support elements. With such arrangement of the support elements, sagging of the substrate is inhibited efficiently by a reduced number of support elements.

Abstract: A substrate processing apparatus of which through holes in a mounting stage can be properly sealed. A substrate processing apparatus comprises a plate-like mounting stage having a plurality of first through holes, a base member including a plurality of second through holes that have female thread portions, a plurality of pin-shaped members being passed through and fitted into the first and second through holes and including flange portions, a plurality of sealing surfaces, and a plurality of sealing members disposed such as to enclose openings of the first through holes. One ends of the pin-shaped members project out from the sealing surfaces, and the other ends have male thread portions capable of engaging with female thread portions of the base member. When the base member moves away from the mounting stage, an end of each of the female thread portions comes into abutment with an end of each of the male thread portions.

Abstract: A heating device for manufacturing semiconductor capable of uniformly heating a wafer or other materials to be treated, and in particular a heating device in a coater-developer used for heat-hardening of resin film for photolithography and for heat-calcining of low-dielectric constant insulating film, is provided. A device of this invention comprises a ceramic holder 1 having a resistive heating element 2 embedded therein, which holds and heats a wafer 6 or another material to be treated; a cylindrical support member 4 which supports the ceramic holder 1; and a chamber 5 which houses these. The support member 4 and ceramic holder 1 are not hermetically sealed, or alternatively the atmospheres within the cylindrical support member 4 and within the chamber 5 are maintained to be substantially the same by adjusting the introduction and evacuation of gas.

Abstract: The disclosed heating device is to perform a heating process on an exposed substrate formed with a resist film before a developing process, the device including a heating part to perform a heating process on the exposed substrate, the heating part including a plurality of two-dimensionally arranged heating elements; a seating part provided at an upper side of the heating part, on which the substrate is disposed; and a control part to correct a setting temperature of the heating part based on temperature correction values, and to control the heating part based on the corrected setting temperature, during the heating process on one substrate by the heating part, wherein the temperature correction values being previously obtained from measured critical dimensions of the resist pattern in another substrate formed with the resist pattern through the heating process by the heating part and then the developing process.

Abstract: A method for forming a semiconductor structure is disclosed. The method includes forming a high-k dielectric layer over a semiconductor substrate and forming a gate layer over the high-k dielectric layer. The method also includes heating the gate layer to 350° C., wherein, if the gate layer includes non-conductive material, the non-conductive material becomes conductive. The method further includes annealing the substrate, the high-k dielectric layer, and the gate layer in excess of 350° C. and, during the annealing, applying a negative electrical bias to the gate layer relative to the semiconductor substrate. A semiconductor structure is also disclosed. The semiconductor structure includes a high-k dielectric layer over a semiconductor substrate, and a gate layer over the high-k dielectric layer. The gate layer has a negative electrical bias during anneal. A p-channel FET including this semiconductor structure is also disclosed.

Abstract: A substrate supporting mechanism includes a function for heating a substrate placed thereon in a process container of a substrate processing apparatus. The substrate supporting mechanism includes a worktable configured to place the substrate thereon and including a heating element made of silicon carbide and formed in a predetermined pattern; an electric feeder electrode configured to supply electricity to the heating element; and a partition member made of an electrically insulating material and interposed between portions adjacent to each other in the heating element formed in the predetermined pattern.

Abstract: A thermal plate of a heating unit is divided into a plurality of thermal plate regions, and a temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting a temperature within the thermal plate can be set for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to a photolithography process are measured, and an in-plane tendency of the measured line widths is decomposed into a plurality of in-plane tendency components using a Zernike polynomial. From the calculated plurality of in-plane tendency components, in-plane tendency components improvable by changing the temperature correction values are extracted and added together to calculate an improvable in-plane tendency of the measured line widths within the substrate.

Abstract: There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p that is an oxide having an oxygen amount of stoichiometric ratio or less formed on the protection layer. There can be provided a heating element in which a corrosion-resistant layer whose resistivity or hardness is controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.

Abstract: The present invention provides microcantilever hotplate devices which incorporate temperature compensating strain sensors. The microcantilever hotplate devices of the present invention comprise microcantilevers having temperature compensating strain sensors and resistive heaters. The present invention also provides methods for using a microcantilever hotplate for temperature compensated surface stress measurements, chemical/biochemical sensing, measuring various properties of compounds adhered to the microcantilever hotplate surface, or for temperature compensated deflection measurements.

Abstract: A heat treatment apparatus includes a support sheet placed on an upper surface of a heat-treating plate. The support sheet has, formed on an upper surface thereof, projections for contacting and supporting a substrate, and a lip for contacting edge regions of the substrate. The support sheet is formed by an etching process, and therefore areas of the sheet around the projections are recessed, rather than being perforated as in the case of laser processing. These heat-treating plate and support sheet constitute a substrate support structure capable of supporting the substrate properly.

Abstract: Disclosed is the method and apparatus for annealing semiconductor substrates. One embodiment provides a semiconductor processing chamber comprising a first substrate support configured to support a substrate, a second substrate support configured to support a substrate, a shuttle coupled to the first substrate support and configured to move the first substrate support between a processing zone and a first loading zone, wherein the processing zone having a processing volume configured to alternately accommodating the first substrate support and the second substrate support.

Abstract: A ceramic heater includes a core material and a ceramic sheet covering the core material, and wherein a side of the ceramic sheet opposite the core material is an outer side of the ceramic heater. A method for manufacturing the ceramic heater includes forming a through hole in a ceramic sheet which is diametrically enlarged from a first surface toward a second surface of the ceramic sheet, forming a via conductor, forming on the second surface a heating portion and lead portion for connecting the heating portion and the via conductor, and covering a core material with the ceramic sheet such that the first surface faces an outer side of the ceramic heater.

Abstract: A supporting base, including a supporting plate and holders, holds a sapphire substrate so that one substrate surface faces a hot plate and the other substrate surface faces a radiant heat absorbing plate mounted on the supporting plate. Radiant heat from the hot plate passes through the sapphire substrate and heats the radiant heat absorbing plate. The sapphire substrate is heated from both sides by air warmed by the hot plate and radiant heat absorbing plate, and therefore does not warp. When the temperature of the sapphire substrate has reached the necessary level, the supporting base delivers the sapphire substrate to the surface of the hot plate, then moves away while the sapphire substrate is held against the hot plate and a semiconductor fabrication process is carried out on the sapphire substrate.

Abstract: Temperature setting of a thermal plate is performed so that the line width of a resist pattern is uniformly formed within a wafer. The thermal plate of a PEB unit is divided into a plurality of thermal plate regions so that the temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the wafer mounted on the thermal plate is set for each of the thermal plate regions of the thermal plate. The temperature correction value for each of the thermal plate regions of the thermal plate is set after calculation by a calculation model created from a correlation between a line width of the resist pattern formed by thermal processing on the thermal plate and the temperature correction value. The calculation model M calculates the temperature correction value to make the line width uniform within the wafer, based on a line width measured value of the resist pattern.

Abstract: Provided are a wafer having a thermal circuit and power supplier therefor, which enable the wafer to heat or cool itself without using any additional heating or cooling system. The wafer includes the thermal circuit that is installed on one side of the wafer to be capable of self-heating or self-cooling the wafer in order to perform a heating process or cooling process on a semiconductor device formed on the surface of the wafer and exchanges heat with the semiconductor device. Thus, a temperature of a semiconductor device can be precisely controlled, and heating and cooling energies are greatly reduced through a direct heat exchange method, thus attaining high efficiency. Since the thermal circuit is directly installed in the wafer, it is structurally simple and the costs of production and installation can be notably reduced. Also, the present invention is very advantageous for optimization, miniaturization, simplification, and environmentally friendly production of a wafer heating/cooling system.

Abstract: A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.

Abstract: A joined body includes a first ceramic member, a second ceramic member, and a joining layer which contains soft metal, and joins the first ceramic member and the second ceramic member to each other by being thermally compressed at a joining temperature lower than a solidus of the soft metal.

Abstract: The present invention provides a heater unit which can improve temperature uniformity of a heated object at the time of heating the object. A second heat conductor 32 which is the radial internal part of shaft 22 has a lower heat transfer ratio than a first heat conductor 30 which is the radial external part of shaft 22. As a result, in the case where a heated state and a non heated state of the resistance heating element 18 are repeatedly switched, the movement of heat from the front part 22B of the shaft 22 to the base point part 22A is suppressed by the second heat conductor 32 compared to the first heat conductor 30. As a result, in the part which confronts the hollow part 42 of the shaft 22 in the heater plate 16, the time required to heat the heater plate 16 and the wafer 28 to be heated to a desired heating temperature is shortened when compared to a conventional heater unit.

Abstract: This invention relates to a method and a device for the thermal treatment of substrates in which the substrates are held in contact with or a small distance away from a heating plate, which is heated by a plurality of separately controllable heating elements on the side of the heating plate facing away from the substrate, the heating plate being surrounded, at least in its plane, by a frame spaced apart therefrom, and gas being conveyed, in a controlled manner, through a gap between the frame and at least one edge of the heating plate.

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, a substrate support opposing the temperature controlled support base and configured to support the substrate, and one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature. An erosion resistant thermal insulator disposed between the temperature controlled support base and the substrate support, wherein the erosion resistant thermal insulator includes a material composition configured to resist halogen-containing gas corrosion.

Abstract: A thermal processing apparatus includes a chamber for accommodating a semiconductor wafer and a radiant fitting. The radiant fitting includes a plurality of first radiant sources having a first reflectivity positioned in a center region of the radiant fitting and a plurality of second radiant sources having a second reflectivity. The second reflectivity is larger than the first reflectivity.

Abstract: A ceramic heater according to the present invention includes a heating portion made of ceramics, and a cooling plate portion. In the heating portion, a belt like printed electrode is formed continuously in a spiral shape along a circumferential direction, and in the printed electrode, slits extended in a width direction of the printed electrode are provided. In such a way, a ceramic heater in which uniform heating performance in the heating surface is high can be obtained.

Abstract: A heating device includes a high-frequency electrode embedded substantially in parallel with a heating surface of a ceramics base in the vicinity of the heating surface. A conducting hole toward this high-frequency electrode is formed in a back face of the ceramics base. This high-frequency electrode has a trapezoidal cone-like concave section toward the conducting hole at a region opposed to the conducting hole.

Abstract: The invention includes coil constructions configured for utilization in PVD chambers, and also includes methods of forming coil constructions suitable for utilization in PVD chambers. The coil constructions can include one or more cup projections extending from an outer periphery of a coil body. The cup projections are one-piece with the coil body, and have a recess extending therein with a projecting lip extending entirely around the recess. The cup projections further comprise a fastener receiver within the recess configured to receive a fastener for connecting the coil with the chamber. The methods of forming the coil construction can include identifying separate components of an assembly associated with a coil replacement kit, and forming a one-piece construction which can be substituted for at least two of the components.

Abstract: Disclosed is a substrate heating apparatus including a hot plate that heats a substrate, and a cooling plate that supports the substrate and moves between a first position (home position) and the second position above the hot plate to transfer wafers between the two positions. A heat-radiating fin structure is connected to the cooling plate to move together with the cooling plate. The fin structure is thermally connected to the cooling plate via heat pipes. A suction port is arranged so as to locate adjacent to the fin structure when the cooling plate is in the home position. The fin structure is cooled by a gas passing therethrough before flown into the suction port, whereby the cooling plate is cooled through heat transfer from the cooling plate to the fin structure through the heat pipes.