Abstract: Example embodiments relate to single-photon avalanche diode detector (SPAD) arrays. One embodiment includes a SPAD array that includes a silicon substrate, a plurality of primary electrodes, and a plurality of secondary electrodes. Each of the primary electrodes includes a semiconductor material of a first doping type, extends in the silicon substrate in a first direction, and has a rotationally symmetric cross-section in a first plane perpendicular to the first direction. The plurality of secondary electrodes includes a semiconductor material of a second doping type and extends parallel to the primary electrodes in the silicon substrate. Further, the silicon substrate includes a doped upper field redistribution layer, a doped lower field redistribution layer, and a doped depletion layer arranged between the upper field redistribution layer and the lower field redistribution layer.

Abstract: Provided is a semiconductor light detection device having a relatively high detection sensitivity to a light component of a specific wavelength. The semiconductor light detection device includes: a semiconductor light receiving element, in which a first conductive layer is formed on a surface of a semiconductor substrate, a second conductive layer is formed below the first conductive layer, a third conductive layer is formed below the second conductive layer, and a photocurrent based on the intensity of incident light is output from the third conductive layer while an input voltage is applied to the first conductive layer; and a semiconductor detection circuit configured to output an output voltage based on a current difference between a first photocurrent and a second photocurrent being output in response to the application of the first input voltage and the second input voltage, respectively.

Abstract: A method for manufacturing a light emitting module including the steps of: preparing a light source including a light emitting element that has a pair of electrodes on the same surface side, and an encapsulation member that covers the light emitting element so as to expose a portion of a surface of the pair of electrodes; preparing a lightguide plate having a first primary surface to be a light emitting surface, and a second primary surface on an opposite side from the first primary surface, wherein the second primary surface has a recessed portion that has a bottom surface and at least one lateral surface; placing the light source on the bottom surface of the recessed portion with the electrodes facing up so as to be spaced apart from the lateral surface of the recessed portion; arranging a cover member that buries a gap between the lateral surface of the recessed portion and the light source and covers the light source including the electrodes; removing the cover member until the electrodes are exposed; and

Abstract: A semiconductor device is manufactured with high mass productivity at low cost. Yield in a manufacturing process of the semiconductor device is improved. An island-shaped metal oxide layer is formed over a substrate, a resin layer is formed over the metal oxide layer to cover an end portion of the metal oxide layer, and the metal oxide layer and the resin layer are separated by light irradiation. After forming the resin layer and before the light irradiation, an insulating layer is formed over the resin layer. For example, the resin layer is formed in an island shape and the insulating layer is formed to cover an end portion of the resin layer. In the case where an adhesive layer is formed over the resin layer, the adhesive layer is preferably formed to be located inward from the end portion of the metal oxide layer.

Abstract: A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

Abstract: The present invention provides a photoelectric conversion element including a photoelectric conversion film having a narrow half-width of absorption peak and an excellent photoelectric conversion efficiency, and an imaging element, an optical sensor, and a compound. The photoelectric conversion element according to the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

Abstract: A device including a plurality of epitaxial chips is disclosed. An epitaxial chip can have one or more of a light source and a detector, where the detector can be configured to measure the optical properties of the light emitted by a light source. In some examples, one or more epitaxial chips can have one or more optical properties that differ from other epitaxial chips. The epitaxial chips can be dependently operable. For example, the detector located on one epitaxial chip can be configured for measuring the optical properties of light emitted by a light source located on another epitaxial chip by way of one or more optical signals. The collection of epitaxial chips can also allow detection of a plurality of laser outputs, where two or more epitaxial chips can have different material and/or optical properties.

Abstract: An event-based sensor includes a dummy pixel that generates a dark current, a current mirror that generates a mirrored current using the dark current, and a sensing pixel that generates a sense current based on an intensity of incident light, and outputs an activation signal, indicating whether a variation in the incident light is sensed, based on a light current that is obtained by subtracting the mirrored current from the sense current.

Abstract: A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductor layer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.

Abstract: According to the conventional knowledge, a thermal humidity measurement device has problems in which the direction of air flow is limited to one direction is too hard to handle in securing the humidity responsiveness because there are limitations on the mounting direction of the thermal humidity measurement device and the state of air flow. An introduction guide protrudes from an air introduction surface to the outside of a measurement chamber, is parallel to a humidity introduction port surface, and has a portion not in contact with an inlet surface of a humidity introduction tube as seen from any direction to guide the flow of air to the humidity introduction tube from any direction of 360°.

Abstract: A two-by-two array consists of four pixels. Each pixel comprises one light-sensing transistor and one reading transistor. Both the light sensing transistor and the reading transistor are formed above a same P-type semiconductor substrate, and have a composite dielectric gate structure. The substrates of the four reading transistors are connected to form a regular octagonal ring structure located in the center of the array. On four sides of the regular octagonal ring structure, four heavily-doped N+ regions are formed on the substrates not covered with the composite dielectric gate, of which every two regions are opposite to each other and form right angles, wherein two opposite heavily-doped N+ regions are connected to form a shared N+ source, and the other two are connected to form a shared N+ drain.

Abstract: According to some aspects, an imaging device is provided comprising a photoelectric conversion layer configured to receive light and to produce an electric charge in response to the received light, including a first filter region corresponding to a first pixel of the imaging device, the first filter region having a first thickness and a plurality of through holes formed therein, wherein the first filter region transmits light incident on the first filter region with a first peak transmission wavelength, and a second filter region corresponding to a second pixel of the imaging device, the second filter region having a second thickness greater than the first thickness and having a plurality of through holes formed therein, wherein the second filter region transmits light incident on the second filter region with a second peak transmission wavelength that is greater than the first peak transmission wavelength.

Abstract: The proposed concept relates to an optical sensor arrangement comprising an optical sensor with an integrated circuit arranged in or on a substrate. The substrate comprises at least a first surface area and a second surface area. At least one optically active sensor component is arranged on or in the substrate of the first surface area. The optically active sensor component is arranged for emitting and/or detecting light of a desired wavelength range. Optically inactive sensor circuitry is arranged on or in the substrate of the second surface area. A display panel comprises an active display area and a non-active display area, wherein the non-active display area comprises a material which is optically transparent in the desired wavelength range and wherein the non-active display area at least partly frames the active display layer.

Abstract: In one embodiment, a method of forming a semiconductor device may include forming a sensing circuit to apply a voltage to a doped region wherein the voltage expands depletion region toward a second depletion region but substantially does not intersect the second depletion region. An embodiment may include configuring the sensing circuit to detect electrons within the doped region and to responsively assert a detection signal representing detection of the electrons wherein the sensing circuit detects the electrons while applying the voltage to the second doped region.

Abstract: An imaging system comprises a light source generating a pump beam, and an optical coupling system for receiving an input beam of infrared light from a scene and combining the input beam with the pump beam, wherein an intensity of the pump beam is higher than an intensity of the input beam. The imaging system further comprises a crystal configured for adiabatically mixing the beams and providing an output beam having a frequency which is a sum of frequencies of the input and pump beams, and a visible, near-infrared or ultraviolet light imager configured for collecting and to spectrally resolving the output beam.

Abstract: A method of manufacturing a hybrid focal-plane array includes: forming a read-out integrated circuit with integral bending slit; forming a detector die separately from the read-out integrated circuit and including a detector with integral bending slit; and joining the read-out integrated circuit and the detector die to each other such that the read-out bending slit and the detector bending slit are aligned with each other.

Abstract: A column parallel ADC circuit includes: plural column ADCs and a digital processing circuit. The plural column ADCs generate respective plural digital counts. The plural column ADCs include a first column ADC and a second column ADC. The first column ADC generates a first digital count according to a first analog signal, and the second column ADC generates a second digital count according to a second analog signal. The first digital count is a difference between a first digital signal and a second digital signal. The first and the second digital signals correspond to the first and the second analog signals respectively. The digital processing circuit generates the plural digital signals, wherein the digital processing circuit generates the first digital signal according to the first digital count and the second digital signal.

Abstract: The inventive concepts provide an auto-focus image sensor and a digital image processing device including the same. The auto-focus image sensor includes a substrate including at least one first pixel used for detecting a phase difference and at least one second pixel used for detecting an image, a deep device isolation portion disposed in the substrate to isolate the first pixel from the second pixel, and a light shielding pattern disposed on the substrate of at least the first pixel. The amount of light incident on the first pixel is smaller than the amount of light incident on the second pixel by the light shielding pattern.

Abstract: System and method for current control. As an example, the system for current control includes: a transistor including a drain terminal, a gate terminal, and a source terminal, the drain terminal being coupled to one or more light emitting diodes; a resistor coupled to the source terminal of the transistor and configured to generate a resistor voltage related to a current flowing through the one or more emitting diodes; a voltage detector configured to receiver a first input voltage related to a second input voltage received by the one or more light emitting diodes; and a voltage controller coupled to the voltage detector, the resistor, and the gate terminal of the transistor; wherein the voltage detector is further configured to: detect the first input voltage; and generate a control signal based at least in part on the first input voltage.

Abstract: A method of remotely sensing an object includes: collecting photons from the object; directing the photons down pathways, wherein photons in each of the pathways have a different polarization state; detecting photons in each of the pathways using at least one optical detector, wherein the photons in each of the polarization states produce a signal; receiving, with at least one processor in communication with the at least one optical detector, signals corresponding to the photons in the pathways; determining, with the at least one processor and for a segment of the signals, at least one of: an angle of linear polarization, a degree of polarization, and a degree of circular polarization; and generating a signal corresponding to a sequential output of the angle of linear polarization, degree of polarization, or the degree of circular polarization for each segment.

Abstract: Embodiments of the present disclosure disclose a method, a device and a display apparatus for adjusting a gate-off voltage. In that the method for adjusting the gate-off voltage includes: obtaining a contrast of the display brightness of the display panel by at least one photosensitive element; comparing the contrast with an initial contrast, and if the difference between the contrast and the initial contrast is greater than the set threshold value, adjusting the gate-off voltage.

Abstract: A multimode combiner or coupler (MMC) may combine the inputs into a larger core multimode fiber. The multimode combiner may be combined with a re-transmitting laser for detecting and re-transmitting signals. Thus, the multi-mode combiner may detect and combine input signals, and then retransmit the detected, combined signal. The detection can be implemented with multiple single mode fibers to small single mode detectors or a multi-mode coupler with a larger multi-mode detectors. In embodiments of the MMC, a bi-directional optical splitter/combiner includes a transmitter for re-transmitting an RF signal received at a receiver, a first wave division multiplexer (WDM) combiner combining the output of the first transmitter in an upstream direction to a downstream signal in a downstream direction, and a second WDM combiner combining split downstream signals in the downstream direction with upstream signals received via at least two optical fiber inputs.

Abstract: A solid-state imaging device includes a photon detector that operates in a Geiger mode and outputs an output signal in accordance with incidence of a photon, a quench element that causes the photon detector to transition to a non-Geiger mode in accordance with the output signal, a control unit that, when the photon detector transitions from a Geiger mode to a non-Geiger mode, switches the quench element from a detection mode, in which the quench element is in a relatively low resistance state and the photon detector detects a photon, to a hold mode, in which the quench element is in a relatively high resistance state and holds the output signal, and a signal processing circuit that performs a predetermined process on the output signal.

Abstract: The invention discloses a method and system for measuring orbital angular momentum modes of photons based on spiral transformation. A phase plate located in an input plane transforms the incident beam along a spiral path in the input plane into a straight line in an output plane and a phase plate located in the output plane compensate the phase accumulated when the beam propagates from the input plane to the output plane during the above transformation process, thereby realizing that the orbital angular momentum modes of photons to be measured in the input plane are transformed into plane wave modes with specific tilted wavefronts in the output plane. The plane wave modes with different tilted wavefronts can be focused on different positions on the focal plane and thus realize one-to-one mapping and detection between orbital angular momentum modes of photons and spatial locations.

Abstract: Optical apparatus includes a projector, which directs a sequence of pulses of radiation toward a scene so as to form one or more lines of the radiation on the scene. A receiver includes an array of single-photon detectors, which output, in response to the radiation that is incident thereon, signals indicative of a time-of-flight of the pulses from the projector to the receiver via the points in the scene, and collection optics, which form an image the scene on the array, including the one or more lines of the radiation, such that each single-photon detector receives the radiation reflected from a corresponding point in the scene. A processor receives the signals output by the sensing elements, and derives depth coordinates of the points in the scene from both the time-of-flight of the pulses and triangulation of the one or more lines in the image.

Abstract: A back side illuminated image sensor may operate using the single-photon avalanche diode (SPAD) concept in a Geiger mode of operation for single photon detection. The image sensor may be implemented using two layer stacking with a silicon on insulator (SOI) chip. The chip-to-chip electrical connections between the top level image sensing chip and the second level ASIC circuit chip may be realized at each pixel with a single bump connection per pixel. A light level signal may be obtained from pixels that have photon counting capabilities while a distance measurement signal for 3-dimensional imaging may be obtained from pixels that have time-of-flight (ToF) detection capabilities. Both types of pixels may be integrated within the same array and use the same SPAD structure placed on the top chip.

Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

Abstract: The present disclosure provides an optical touch device and a manufacturing method thereof, a display and an electronic device, wherein the optical touch device comprises: a pixel array (11) that comprises a plurality of pixel sub-circuits (101) each of which comprises M first pixels (1011) and N second pixels (1012), wherein detection rays with a preset frequency are emitted by the second pixels (1012), where M and N are positive integers; a light receiving array (12) that comprises a plurality of light receivers (121) corresponding, at a one-to-one basis, to the plurality of pixel sub-circuits (101), wherein each of the light receivers (121) generates an sensing signal by receiving reflected rays of the detection rays emitted by a corresponding second pixel (1012); and a detection circuit (13) connected with the plurality of light receivers (121), wherein the detection circuit (13) performs touch positioning.

Abstract: According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray, radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray, radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current.

Abstract: An apparatus (1) for additive manufacturing of three-dimensional objects (2) by successive, selective layer-by-layer exposure and thus successive, selective layer-by-layer solidification of construction material layers of a construction material (3) that can be solidified by means of laser radiation in a process chamber (10) of the apparatus, comprising an exposure device (5) provided for generating laser radiation for selective exposure and thus selective solidification of respective construction material layers, and a detection device (11) provided for detecting the entering of laser radiation into a process chamber limiting element at least partially limiting the process chamber (10) and/or for detecting the penetration of laser radiation through a process chamber limiting element at least partially limiting the process chamber (10).

Abstract: The present disclosure provides an optical measurement module which includes a detection sub-circuit, a comparison sub-circuit and a blocking layer, the blocking layer includes at least one blocking element, the detection sub-circuit comprises a first photosensitive element, and the detection sub-circuit is configured to output a detection signal according to light irradiation received by the first photosensitive element and an input signal of the detection sub-circuit; the comparison sub-circuit includes a second photosensitive element, the at least one blocking element in the blocking layer covers at least the second photosensitive element, the comparison sub-circuit is configured to output a comparison signal according to an input signal of the comparison sub-circuit; wherein the first photosensitive element and the second photosensitive element have a same structure, so that they have a same response to light irradiation and a same response to environment.

Abstract: A single photon avalanche diode based range detecting apparatus includes a reference array of single photon avalanche diodes configured to receive light from an illumination source via an internally coupled path. A return array of single photon avalanche diodes is configured to receive light from the illumination source via an external free space path. A calibration pulse generator is configured to generate a calibration signal pulse. Readout circuitry is configured to receive an output of the reference array via a reference signal path, an output of the return array via a return signal path, and an output of the calibration pulse generator via a calibration signal path. The readout circuitry is configured to determine a delay difference value between the reference signal path and the return signal path based on the output of the calibration pulse generator via the calibration signal path.

Abstract: A radiation monitor for a lighting device, and operating methods and systems therefor are provided. In one example, a radiation monitor may include a first sensor receiving radiation output directly from a light-emitting element of the lighting device and radiation output from external sources; and a second sensor receiving the radiation output from the external sources without receiving the radiation output directly from the light-emitting element of the lighting device. The radiation monitor may determine an intensity of the radiation output directly from the light-emitting element based on a difference in the output signals from the first sensor and the second sensor.

Abstract: An X-ray detector, including a stacking arrangement, includes an evaluation unit and a carrier unit. The evaluation unit and the carrier unit are electrically conductively connected via a plurality of connecting elements. An interspace is formed between the evaluation unit, the carrier unit and the plurality of connecting elements. A protective element is formed on side faces of the carrier unit, arranged essentially parallel to a stacking direction of the stacking arrangement. The protective element is formed in at least one section of the side faces along the entire outer circumference and along the edges of the side faces, facing the evaluation unit.

Abstract: Disclosed is a light source device for endoscope including: a front panel which includes a touch portion and a display portion; a touch board which is disposed in a rear side of the front panel, and comprises an electrostatic touch sensor that is located in a position corresponding to the touch portion and detects an input generated in the touch portion; a light source board which is disposed in a rear side of the touch board, and comprises a light source configured to irradiate light to at least one of the display portion and the touch portion; and a guide unit which is provided between the touch board and the light source board, and guides the light irradiated from the light source.

Abstract: A plasmonic grating sensor having periodic arrays of vertically aligned plasmonic nanopillars, nanowires, or both with an interparticle pitch ranging from ?/8-2?, where ? is the incident wavelength of light divided by the effective index of refraction of the sample; a coupled-plasmonic array sensor having vertically aligned periodic arrays of plasmonically coupled nanopillars, nanowires, or both with interparticle gaps sufficient to induce overlap between the plasmonic evanescent fields from neighboring nanoparticles, typically requiring edge-to-edge separations of less than 20 nm; and a plasmo-photonic array sensor having a double-resonant, periodic array of vertically aligned subarrays of 1 to 25 plasmonically coupled nanopillars, nanowires, or both where the subarrays are periodically spaced at a pitch on the order of a wavelength of light.

Abstract: An exemplary photodetector system includes a photodetector and a time-to-digital converter (TDC) coupled to the photodetector. The TDC is configured to receive, during a predetermined event detection time window that commences in response to an application of a light pulse to a target, a signal triggered by an event in which the photodetector detects a photon of the light pulse after the light pulse reflects from the target. The TDC is further configured to enable, in response to the receiving the signal, a gated ring oscillator (GRO) of the TDC, measure, using the GRO, a time interval between when the event occurred and an end of the predetermined event detection time window, and determine, based on the time interval and the predetermined event detection time window, an arrival time of the photon at the photodetector.

Abstract: An integrated circuit device with ESD protection includes a substrate with a well having a first conductivity type formed on the substrate. A drain region has at least one drain diffusion with a second conductivity type implanted in the well and at least one drain conductive insertion on the well. The drain conductive insertion is electrically connected to the drain diffusion and an I/O pad. A source region includes a plurality of source diffusions having the second conductivity type implanted in the well, and the source diffusions are electrically connected to a voltage terminal.

Abstract: A system for low light level image sensing is provided having: A photodiode; a transfer gate disposed in a center of the photodiode; an active gate disposed surrounded by the transfer gate; a plurality of microlenses, each microlens being disposed over a portion of the photodiode and directing light away from the transfer gate towards the photodiode.

Abstract: Techniques, systems, and devices are disclosed that relate to coaxial photoconductive switch modules. The coaxial photoconductive switch may include an outer conductor, an inner conductor, and a photoconductive material positioned between the inner conductor and the outer conductor. The inner conductor, the outer conductor, and the photoconductive material have a predetermined height. A bias voltage may be applied between the inner conductor and the outer conductor. When light of a predetermined wavelength and a predetermined intensity is incident on the photoconductive material, the photoconductive material may break down allowing a current to flow through the photoconductive material between the inner conductor and the outer conductor.

Abstract: The invention relates to a method and a device for determining a return time of a returning light pulse by a Single Photon (SPL) LiDAR scanner, the SPL scanner comprising of a low photon count detector for converting low amounts of photons or single photons to electrical signals, and a control and processing unit for processing the data and for determining the return time of the returning light pulse. The control and processing unit identify detected photons potentially representing a return pulse event and create a return pulse signal based on a criterion involving a temporal probability distribution for the detected photons, identify a rising edge and a falling edge of the return pulse signal, and determine the return time for each return pulse event based on the rising edge and the falling edge of the return pulse signal.

Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode, a hole transport layer disposed on the first electrode, an emission layer disposed on the hole transport layer and including light emitting particles, an electron transport layer disposed on the emission layer and including nanoparticles having electron transport capability, and a second electrode disposed on the electron transport layer, wherein at least a portion of the nanoparticles having electron transport capability include an inorganic oxide core represented by Chemical Formula 1, an organic ligand attached to a surface of the inorganic oxide core, and a metal-organic compound chemically bound to the surface of the inorganic oxide core.

Abstract: A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.

Abstract: An image sensor device includes a substrate, a pixel circuit, a dielectric structure, a photo sensitive element, a grid, and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The pixel circuit is disposed on the first side of the substrate. The dielectric structure is disposed on the second side of the substrate. The photo sensitive element is disposed between the pixel circuit and the dielectric structure. The grid is disposed on the dielectric structure. The convex dielectric lens is disposed on the dielectric structure. The convex dielectric lens has a convex side. A topmost of the convex side is above an interface between the dielectric structure and the grid.

Abstract: According to some aspects, an imaging device is provided comprising a photoelectric conversion layer configured to receive light and to produce an electric charge in response to the received light, including a first filter region corresponding to a first pixel of the imaging device, the first filter region having a first thickness and a plurality of through holes formed therein, wherein the first filter region transmits light incident on the first filter region with a first peak transmission wavelength, and a second filter region corresponding to a second pixel of the imaging device, the second filter region having a second thickness greater than the first thickness and having a plurality of through holes formed therein, wherein the second filter region transmits light incident on the second filter region with a second peak transmission wavelength that is greater than the first peak transmission wavelength.

Abstract: Optical materials for optical devices are provided that comprise a plurality of hedgehog-shaped microparticles. Each hedgehog microparticle comprises a core region formed of a first material having a first refractive index and a plurality of needles connected to and substantially orthogonal to a surface of the core region. The needles comprise a second material having a second refractive index. The optical material enhances forward scattering of a predetermined wavelength of light, while suppressing backscattering of the predetermined wavelength of light. Methods of controlling transparency in an optical material comprising a plurality of hedgehog microparticles, while suppressing backscattering are also provided. Spectral tuning with use of such optical materials is also provided.

Abstract: A method for forming horizontal nanowires, the method comprising providing a substrate comprising a dielectric layer and a fin structure comprising a portion protruding from the dielectric layer, the protruding portion being partially un-masked and comprising a multi-layer stack consisting of a layer of a first material stacked alternately and repeatedly with a layer of a second material and forming horizontal nanowires done by performing a cycle comprising removing selectively the first material up to the moment that a horizontal nanowire of the second material becomes suspended over a remaining portion of the partially un-masked protruding portion, forming a sacrificial layer on the remaining portion, while leaving the suspended horizontal nanowire uncovered, providing, selectively, a cladding layer on the suspended horizontal nanowire, and thereafter removing the sacrificial layer.

Abstract: The present application provides an imaging assembly, a method and molding mold for fabricating same, a camera module, and a smart terminal. According to an aspect of the present application, the imaging assembly includes a photosensitive element and a molded encapsulation portion. The photosensitive element has a photosensitive area. The molded encapsulation portion is formed around the photosensitive area and is in contact with the photosensitive element. The molded encapsulation portion has an inclined inner side surface and a top surface higher than the photosensitive area. A height difference between the top surface of the molded encapsulation portion and the photosensitive area of the photosensitive element is less than or equal to 0.7 mm, and the inclined inner side surface and the top surface have different surface roughnesses.

Abstract: An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

Abstract: A manufacturing apparatus, a manufacturing method, and an electronic appliance that contribute to miniaturization and thinning of an imaging apparatus. The imaging apparatus includes a first circuit board in which an imaging element is mounted on a center portion, a component that is mounted on an outer circumference portion of the center portion of the first circuit board, and a member that incorporates the component and is provided in the outer circumference portion and is formed by a mold method. The imaging apparatus further includes a lens barrel that holds a lens, in which a frame that supports a portion including the lens barrel is located on the member. Further, the frame includes an infra red cut filter (IRCF).