Abstract: Provided is a charged particle beam control device having improved signal detection accuracy. The charged particle beam control device (detection block) includes: a detector provided in a charged particle beam device, and configured to detect secondary electrons emitted from a sample by irradiating the sample with a charged particle beam and output an electric signal based on the detected secondary electrons; a signal wiring configured to transmit the electric signal; a noise detection wiring configured to detect a noise signal generated in the charged particle beam device; and an arithmetic circuit configured to generate a signal obtained by subtracting the noise signal from the electric signal.

Abstract: The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

Abstract: A pattern inspection apparatus according to an aspect described herein includes: a stage on which an object to be inspected is capable to be mounted, a multibeam column that irradiates the object to be inspected with multi-primary electron beams, and a multi-detector including a first detection pixel that receives irradiation of a first secondary electron beam emitted after a first beam scanning region of the object to be inspected is irradiated with a first primary electron beam of the multi-primary electron beams and a second detection pixel that receives irradiation of a second secondary electron beam emitted after a second beam scanning region adjacent to the first beam scanning region of the object to be inspected and overlapping with the first beam scanning region is irradiated with a second primary electron beam adjacent to the first primary electron beam of the multi-primary electron beams; a comparison unit that obtains a difference in beam intensity between the first primary electron beam and the se

Abstract: An electron beam detection element according to an exemplary embodiment includes a plurality of unit cells. Each of the plurality of unit cells includes a diode of avalanche multiplication type and a plurality of memories. The diode of avalanche multiplication type is configured to detect an electron beam. The plurality of memories store signals of different frames respectively, each of the signals being output from the diode.

Abstract: A spin polarimeter includes: a particle beam source or a photon beam source that is a probe for a sample; a sample chamber in which the sample is accommodated; a spin detector that includes a target to be irradiated with an electron generated from the sample by a particle beam or a photon beam from the probe, and a target chamber in which the target is accommodated, and is configured to detect a spin of the sample by detecting an electron scattered on the target; a first exhaust system that is configured to exhaust the sample chamber; a second exhaust system that is configured to exhaust the target chamber; and an orifice that is disposed between the target chamber and the sample chamber.

Abstract: A multiple electron beam irradiation apparatus includes a forming mechanism which forms multiple primary electron beams; a plurality of electrode substrates being stacked in each of which a plurality of openings of various diameter dimensions are formed, the plurality of openings being arranged at passage positions of the multiple primary electron beams, and through each of which a corresponding one of the multiple primary electron beams passes, the plurality of electrode substrates being able to adjust an image plane conjugate position of each of the multiple primary electron beams depending on a corresponding one of the various diameter dimensions; and a stage which is capable of mounting thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode substrates.

Abstract: An x-ray imaging apparatus includes an x-ray source and detector with multiple detector elements. The source and detector are on a support that rotates around a subject, enabling projections at different view angles. The apparatus operates the x-ray source in switched kVp mode for alternately applying different voltages, including lower and higher voltages, during rotation to enable lower-energy and higher-energy exposures over the projections, providing for lower-energy projections and higher-energy projections. The x-ray detector is a photon-counting multi-bin detector allocating photon counts to multiple energy bins, and the apparatus selects counts from at least a subset of the bins to provide corresponding photon count information for both lower- and higher-energy projections.

Abstract: Signal electrons with high energy that pass near an optical axis, for example, backscattered electrons or secondary electrons in a booster optical system, can be detected. Therefore, there is provided a charged particle beam device including: a charged particle beam source configured to generate a charged particle beam; an objective lens configured to focus the charged particle beam to a sample; and a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, in which a detection surface of the first charged particle detecting element is disposed on a center axis of the objective lens.

Abstract: The methods and systems disclosed here detect edges of top-down images of respective cross-sections of an array of high-aspect-ratio (HAR) features. The respective cross sections are at various depths of a HAR feature along a longitudinal direction. The detected edges are re-sampled in a spatial domain at a target angular resolution. The re-sampled edges are represented as a corresponding set of harmonics in a frequency domain, each set of harmonics preserving characteristic information about a respective cross-section of the HAR feature at a certain depth. A plurality of cross-sections at the various depths of the HAR feature are reconstructed by analyzing the corresponding sets of harmonics in the frequency domain. A 3D profile of the HAR feature is generated by stitching the plurality of re-constructed cross-sections at the various depths of the HAR feature.

Abstract: A system combination includes a particle beam system and a light-optical system. The particle beam system can be an individual particle beam system or a multiple particle beam system. A light entry mechanism can provided at a branching site of a beam tube arrangement within a beam switch. A light beam of the light-optical system can enter into the beam tube arrangement through the light entry mechanism such that the light beam impinges, in substantially collinear fashion with particle radiation, on an object to be inspected. Parts of the light-optical beam path and parts of the particle-optical beam path can extend parallel to one another or overlap with one another. This arrangement can allow light of the light-optical system to be incident in perpendicular fashion on an object to be inspected, optionally without impairing the particle-optical resolution of the particle beam system.

Abstract: Methods, systems, and devices for leakage source detection are described. In some cases, a testing device may scan a first set of access lines of a memory die that have a first length and a second set of access lines of the memory die that have a second length different than the first length. The testing device may determine a first error rate associated with the first set of access lines and a second error rate associated with the second set of access lines. The testing device may categorize a performance of the memory die based on the first and second error rates. In some cases, the testing device may determine a third error rate associated with a type of error based on the first and second error rates and may categorize the performance of the memory die based on the third error rate.

Abstract: A laser beam adjustment unit adjusts a laser beam applied to a cantilever. Assuming that a direction of displacement of a spot of the laser beam on a light receiving surface when the cantilever is displaced during measurement of properties of a sample is defined as a first direction, and a direction orthogonal to the first direction on the light receiving surface is defined as a second direction, the laser beam adjustment unit adjusts the laser beam such that a length of the spot of the laser beam in the second direction during adjustment of a position of a detection unit is longer than a length of the spot of the laser beam in the first direction during measurement of the properties of the sample.

Abstract: A method that includes performing multiple test iterations to provide multiple test results; and processing the multiple test results to provide estimates of a conductivity of each of the multiple bottoms segments. The multiple test iterations includes repeating, for each bottom segment of the multiple bottom segments, the steps of: (a) illuminating the bottom segment by a charging electron beam; wherein electrons emitted from the bottom segment due to the illuminating are prevented from exiting the hole; (b) irradiating, by a probing electron beam, an area of an upper surface of the dielectric medium; (c) collecting electrons emitted from the area of the upper surface as a result of the irradiation of the area by the probing electron beam to provide collected electrons; and (d) determining an energy of at least one of the collected electrons to provide a test result.

Abstract: A calibration method for calibrating the position error in the point of interest induced from the stage of the defect inspection tool is achieved by controlling the deflectors directly. The position error in the point of interest is obtained from the design layout database.

Abstract: The present disclosure provides a method and a system for scanning wafer. The system captures a defect image of a wafer, and generates a reference image corresponding to the first defect image based on a reference image generation model. The system generates a defect marked image based on the defect image and the reference image.

Abstract: Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

Abstract: An interferometric electron microscope with increased irradiating electric current density which causes electron waves to interfere with each other and includes: an electron source; an irradiating lens system a focusing lens system an observational plane an artificial grating disposed between the electron source and the irradiating lens system and diffracting the electron beam emitted from the electron source to produce a first electron wave and a second electron wave; an electron beam biprism deflecting the first electron wave and the second electron wave to pass the first electron wave through the specimen for use as an object wave and to use the second electron wave as a reference wave; and an electron beam biprism in a focusing system deflecting the objective wave and the reference wave to superimpose the objective wave and the reference wave on the observational plane to produce an image.

Abstract: Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy.

Abstract: Techniques of using a Transmission Charged Particle Microscope for diffraction pattern detection are disclosed. An example method including irradiating at least a portion of a specimen with a charged particle beam, using an imaging system to collect charged particles that traverse the specimen during said irradiation, and to direct them onto a detector configured to operate in a particle counting mode, using said detector to record a diffraction pattern of said irradiated portion of the specimen, recording said diffraction pattern iteratively in a series of successive detection frames, and during recording of each frame, using a scanning assembly for causing relative motion of said diffraction pattern and said detector, so as to cause each local intensity maximum in said pattern to trace out a locus on said detector.

Abstract: The invention relates to a pulse shaper (18). The pulse shaper (18) comprises an integrator (19) for generating a pulse having a peak amplitude indicative of the energy of a detected photon, a feedback resistor (22), switchable discharge circuitry (23) for discharging the integrator (19), and a peak detector (24) for detecting the peak of the pulse. The pulse shaper is adapted to start the discharge of the integrator by the switchable discharge circuitry based on the detection of the peak and to connect the feedback resistor in parallel to the integrator during a period of the pulse generation and to disconnect the feedback resistor during another period of the pulse generation. The pulse shaper can be such that the generation of the pulse is substantially unhindered by any noticeable concurrent discharging mechanism while, at the same time, the occurrence of energy pedestals can be efficiently avoided.

Abstract: A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.

Abstract: A semiconductor device is scanned by an electron beam of a scanning electron microscope (SEM). The area includes a three-dimensional (3D) feature having a top opening and a sidewall. The 3D feature is imaged while varying an energy value of the electron beam. The electron beam impinges at a first point within a selected area of the semiconductor device and interacts with the sidewall, wherein the first point is at a distance away from an edge of the top opening. Based on change in a signal representing secondary electron yield at the edge as the energy value of the electron beam is varied during the SEM imaging, it is determined whether the sidewall is occluded from a line-of-sight of the electron beam. A slope of the sidewall may be determined by comparing measured signals with simulated waveforms corresponding to various slopes.

Abstract: Apparatuses for collection of wavelength resolved and angular resolved cathodoluminescence (WRARCL) emitted from a sample exposed to an electron beam (e-beam) or other excitation beams are described. Cathodoluminescence light (CL) may be emitted from a sample at specific angles relative to the excitation beam and analyzed with respect to light-emitting and other optical phenomena. The described embodiments allow collection of WRARCL data more efficiently and with significantly fewer aberrations than existing systems.

Abstract: A display control system includes an image data generation device that generates a plurality of pieces of image data, a storage device that stores the plurality of pieces of image data and a plurality of pieces of position data of holding units, and a display data generation device that generates display data on the basis of the plurality of pieces of image data and position data. The display data is data for aligning and displaying in a fixed direction a plurality of pieces of sample information that includes at least either a plurality of images or a plurality of analysis results, and data that is a result of laying out first sample information and first position information in such a manner that a display device displays the first sample information and the first position information representing a position of a first holding unit corresponding to the first sample information.

Abstract: A three-dimensional display apparatus includes a display panel and an optical element. The display panel includes a display surface. The display surface extends in a first direction, extends in a second direction orthogonal to the first direction. The first direction corresponds to a parallax direction of user's eyes seeing an image. The display surface curves around a central axis extending in the second direction. The display surface includes subpixels arranged in a grid pattern in the first direction and the second direction within the display surface. The optical element is arranged along the display surface, and the optical element includes strip-shaped regions, each of which extends in a certain direction. The optical element is configured to define a beam direction of image light emitted from the subpixels. The display surface forms an arc in a cross-section that is orthogonal to the second direction.

Abstract: The present invention discloses an imaging device, an imaging method, and an imaging system, belonging to the field of sample image data acquisition and imaging technology. The imaging device includes: a charged particle source, a convergence system, a scanning control system, a detection module, and a spectral analysis module disposed below the detection module, where the detection module includes a plurality of pixelated detector units; and the detection module is provided with a hole thereon. The diffraction pattern is obtained by using the detection module, and the spectral analysis module performs spectral analysis on a charged particle beam passing through the hole, so as to obtain the diffraction pattern and spectral signal simultaneously by one scanning. The imaging method of the present invention is based on a hollow ptychography method, which enables toper form imaging on the diffraction pattern obtained through the detection module, with good imaging effects.

Abstract: According to one embodiment, an atom probe inspection device includes one or more processors configured to change a two-dimensional position of a detected ion, detect two-dimensional position information of the ion and a flying time of the ion, identify a type of an element of the ion, generate first information under a first condition and second information under a second condition, and generate a reconstruction image of the sample from the first information and the second information.

Abstract: In embodiments, a linac electron beam excited X-ray source weighing less than 50 pounds, and having a volume less than 1 cubic foot, injects electrons from an RF-excited, diamond tip cathode into a dielectric accelerator tube of diameter less than 10 mm, where the electrons are RF-accelerated to 1-4 MeV. A focusing channel having a plurality of annular permanent magnets can surround the dielectric tube, and a vacuum can be maintained in the tube by a getter pump. The accelerating RF can be 10 GHz or higher. The X-ray source can be powered by a rechargeable battery for more than an hour. Embodiments can be transported within a case having a display attached to an interior surface of its lid. An X-ray head can be removed from the case and extended up to 10 feet while remaining interconnected with the case by a flexible conduit.

Abstract: A rock sample is nano-indented from a surface of the rock sample to a specified depth less than a thickness of the rock sample. While nano-indenting, multiple depths from the surface to the specified depth and multiple loads applied to the sample are measured. From the multiple loads and the multiple depths, a change in load over a specified depth is determined, using which an energy associated with nano-indenting rock sample is determined. From a Scanning Electron Microscope (SEM) image of the nano-indented rock sample, an indentation volume is determined responsive to nano-indenting, and, using the volume, an energy density is determined. It is determined that the energy density associated with the rock sample is substantially equal to energy density of a portion of a subterranean zone in a hydrocarbon reservoir. In response, the physical properties of the rock sample are assigned to the portion of the subterranean zone.

Abstract: A charged particle beam system includes a charged particle source, a multi beam generator, an objective lens, a projection system, and a detector system. The projection system includes a first subcomponent configured to provide low frequency adjustments, and the projection system comprises a second subcomponent configured to provide a high frequency adjustments.

Abstract: A system for producing cryogenic electron microscopy (cryo-EM) grids. A grid holding element holds a cryo-EM grid in place while a sample deposit element deposits liquid sample from a sample supply onto the grid. A sample shaping element shapes the liquid sample and then a cryogenic sample vitrifying element vitrifies the liquid sample. The shaping element may direct a gas jet towards the grid to reduce the thickness of the liquid sample. The gas jet may mix first and second liquid samples together in midair or on the grid. A storage element stores vitrified cryo-EM grids and includes an electromagnetic field (EMF) source that creates an EMF within the storage element such that the vitrified sample is exposed to the EMF. As a result of being exposed to the EMF, a protein provided with the sample is re-oriented from a first orientation to a second orientation.

Abstract: A method of operating an atomic force microscope, comprising a probe, the probe being moved forth and back during respective trace and retrace times of a scan line, the method comprising: a) during trace time, oscillating the probe, b) generating a z feedback signal to keep an amplitude of oscillation of the probe constant at a setpoint value, the z feedback signal being generated by a first feedback loop, c) during retrace time, placing the probe in a drift compensation state by changing the setpoint value to a different value so that the z feedback signal being generated by the first feedback loop causes the probe to move away from the sample and oscillate free, d) detecting an amplitude of free oscillation of the probe and adjusting with a second feedback loop its excitation signal to maintain the amplitude of free oscillation of the probe close to a set value.

Abstract: A charged-particle source for emission of electrons or other electrically charged particles comprises, located between the emitter electrode having an emitter surface and a counter electrode, at least two adjustment electrodes; a pressure regulator device is configured to control the gas pressure in the source space at a pre-defined pressure value. In a first cleaning mode of the particle source, applying a voltage between the emitter and counter electrodes directs gas particles towards the counter electrode, generating secondary electrons which ionize particles of the gas in the source space, and electrostatic potentials are applied to at least some of the adjustment electrodes, generating an electric field directing the ionized gas particles onto the emitter surface.

Abstract: A radiotherapy apparatus is disclosed, with a linear accelerator for producing a beam of electrons, a target aligned with the electron beam, the target being capable of producing photons when electrons are incident thereon, and a material which is capable of producing neutrons when photons of sufficient energy are incident thereon. A neutron detector capable of providing a signal to a controller of the linear accelerator is provided, the controller being capable of varying the energy of the electrons of the electron beam.

Abstract: There is provided a crystal orientation figure creating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample, the crystal orientation figure creating device being configured to create a crystal orientation figure, which is a figure representing a crystal coordinate system of a crystal at a position selected on the surface with respect to an incident direction of the charged particle beam, the crystal orientation figure creating device including: an orientation information acquiring unit configured to acquire crystal orientation information with respect to the incident direction at the selected position; an incident direction information acquiring unit configured to acquire information relating to an incident direction of the charged particle beam with respect to the sample; and a crystal orientation figure creating unit configured to create a crystal orientation figure in a changed incident direction at the selected position, based on the crys

Abstract: There is provided a tilting parameters calculating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample mounted on a sample stage, the tilting parameters calculating device being configured to calculate tilting parameters, the tilting parameters being input parameters to control a tilting direction and a tilting value of the sample and/or the charged particle beam, the input parameters being necessary to change an incident direction of the charged particle beam with respect to the sample, the tilting parameters calculating device including a tilting parameters calculating unit for calculating the tilting parameters based on information that indicates the incident direction of the charged particle beam with respect to a crystal lying at a selected position on the surface in a state where the incident direction of the charged particle beam with respect to the sample is in a predetermined incident direction, the information being designated on a

Abstract: An electron sensor and a system with a plurality of electron sensors for electron microscopy using an electron microscope. More specifically, the electron microscope generates an electron beam that includes at least one electron that impacts on a lateral reception surface of said electron sensor and this generates an electrical charge of electron-hole (e-h) pairs that are detected and/or measured by at least electrodes linked to an electric circuit unit to form a high dynamic range image and measure the energy of the electrons impacting each pixel of the image.

Abstract: The disclosure relates to systems and method for processing images. The method includes selecting a predetermined reference structure, the predetermined reference structure having a known feature size/shape. The method also includes obtaining a reference image of the predetermined reference structure, and capturing a calibration image of the predetermined reference structure using an observation device. The calibration image includes a plurality of features. Additionally, the method includes identifying at least one portion of the plurality of features of the calibration image that include a feature size/shape substantially similar to the known feature size and shape of the predetermined reference structure. Finally, the method includes combining the identified portion of the plurality of features of the calibration image to form a stacked feature image, and determining a point spread function (PSF) of the observation device by comparing the obtained reference image with the stacked feature image.

Abstract: Disclosed is a substrate processing apparatus including a chamber having a processing space inside, a support unit that supports a substrate in the processing space, a gas supply unit that supplies gas into the processing space, a plasma source that generates plasma from the gas supplied into the processing space, and a detection unit that is provided in a sidewall of the chamber and that measures an impedance change to detect a degree of adsorption of particles on an inner wall of the chamber or a surface of a part that is exposed to the processing space.

Abstract: A charged particle imaging apparatus comprising: A specimen holder, for holding a specimen; A particle-optical column, for: Producing a plurality of charged particle beams, by directing a progenitor charged particle beam onto an aperture plate having a corresponding plurality of apertures within a footprint of the progenitor beam; Directing said beams toward said specimen, wherein: Said aperture plate comprises a plurality of different zones, which comprise mutually different aperture patterns, arranged within said progenitor beam footprint; The particle-optical column comprises a selector device, located downstream of said aperture plate, for selecting a beam array from a chosen one of said zones to be directed onto the specimen.

Abstract: A fabrication method for the fabrication of special nano-scale structures, such as AFM probe tip(s) at the edge of a silicon and/or silicon nitride platform, called the cantilever. An array of these special AFM probes with the AFM tip structure located at the edge is fabricated from an array of regular AFM probes where the AFM tip structure may not originally have been located at the edge of the cantilever. A hard mask is formed on the probe's tip from a hard material, such as a metal mask, where more than one side of the tip could be uncovered. The non-covered side(s) of the probe tip structure(s) are subsequently etched to remove substrate materials, so that a sharp shaft (tip) is formed on the edge of the cantilever, when the process is done in a batch manner it results in an array of such AFM probe tips.

Abstract: An apparatus includes at least one conductive layer, an electromagnetic (EM) wave source, and an electron source. The conductive layer has a thickness less than 5 nm. The electromagnetic (EM) wave source is in electromagnetic communication with the at least one conductive layer and transmits a first EM wave at a first wavelength in the at least one conductive layer so as to generate a surface plasmon polariton (SPP) field near a surface of the at least one conductive layer. The electron source propagates an electron beam at least partially in the SPP field so as to generate a second EM wave at a second wavelength less than the first wavelength.

Abstract: A low voltage scanning electron microscope is disclosed, which includes: an electron source configured to generate an electron beam; an electron beam accelerator configured to accelerate the electron beam; a compound objective lens configured to converge the electron beams accelerated by the electron beam accelerator; a deflection device arranged between the inner wall of the magnetic lens and the optical axis of the electron beam and configured to deflect the electron beam; a detection device comprising a first sub-detection device for receiving secondary and backscattered electrons from the specimen, a second sub-detection device for receiving backscattered electrons, and a control device for changing the trajectories of the secondary electrons and the backscattered electrons; an electrostatic lens comprising the second sub-detection device, a specimen stage, and a control electrode for reducing the moving speed of the electron beam and changing the moving directions of the secondary and the backscattered e

Abstract: A multiple beam image acquisition apparatus includes a stage to mount thereon a target object, a beam forming mechanism to form multiple primary electron beams and a measurement primary electron beam, a primary electron optical system to collectively irradiate the target object surface with the multiple primary electron beams and the measurement primary electron beam, a secondary electron optical system to collectively guide multiple secondary electron beams generated because the target object is irradiated with the multiple primary electron beams, and a measurement secondary electron beam generated because the target object is irradiated with the measurement primary electron beam, a multi-detector to detect the multiple secondary electron beams collectively guided, a measurement mechanism to measure a position of the measurement secondary electron beam collectively guided, and a correction mechanism to correct a trajectory of the multiple secondary electron beams by using a measured position of the measureme

Abstract: An object of the invention is to provide a charged particle beam apparatus capable of achieving both acquisition of an image having high resolution of an inspection target pattern and suppression of a beam irradiation amount when a specific pattern is an inspection target from a highly integrated pattern group.

Abstract: A flat top laser beam is used to generate an electron beam with a photocathode that can include an alkali halide. The flat top profile can be generated using an optical array. The laser beam can be split into multiple laser beams or beamlets, each of which can have the flat top profile. A phosphor screen can be imaged to determine space charge effects or electron energy of the electron beam.

Abstract: A method of observing a liquid specimen in an electron microscope includes: housing the liquid specimen in a space formed by a specimen stage and a lid member; and observing the liquid specimen, wherein the lid member includes a water retaining material, and a supporting member for supporting the water retaining material, and the water retaining material is provided with a through-hole that enables passage of an electron beam with which the liquid specimen is irradiated.

Abstract: Apparatus and methods for creating deposits of uniformly spaced or uniformly overlapping droplets of selected chemicals where each droplet has an a priori known amount of the selected chemical or chemicals is taught (including biological and microbial materials). In some embodiments the deposits may be used as samples of different but known concentrations that may be used to calibrate spectroscopic inspection instruments to enable such instruments to not only provide identification in situ of unknown materials but also to provide calibrated and traceable surface concentrations of such materials. In some embodiments, such calibrated instruments may be used in enhanced processes for validating the cleanliness of manufacturing surfaces such as surfaces of equipment used in the preparation of pharmaceuticals, food, or semiconductor devices.

Abstract: A method for monitoring a first nanometric structure formed by a multiple patterning process, the method may include performing a first plurality of measurements to provide a first plurality of measurement results; wherein the performing of the first plurality of measurements comprises illuminating first plurality of locations of a first sidewall of the first nanometric structure by oblique charged particle beams of different tilt angles; and processing, by a hardware processor, the first plurality of measurement results to determine a first attribute of the first nanometric structure.

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.