Abstract: An object of the invention is to provide a charged particle beam apparatus which can perform optimized adjustment of a focusing condition of a charged particle beam focused on a sample and optimized adjustment of an orbit of a charged particle emitted from the sample. In order to achieve the above-described object, there is provided a charged particle beam apparatus including a passage restriction member that partially restricts passage of a charged particle emitted from a sample, a first lens that is arranged between the passage restriction member and the sample, and that controls an orbit of the charged particle emitted from the sample, and a second lens that is arranged between the passage restriction member and the charged particle source, and that changes a focusing condition of the charged particle beam in accordance with a control condition of the first lens.

Abstract: A target processing machine (100), such as a lithography or inspection machine, comprising a rigid base plate (150), a projection column (101) for projecting one or more optical or particle beams on to a target (130), a support frame (102) supporting the projection column, the support frame being supported by and fixed to the base plate, a stage comprising a movable part (128) for carrying the target and a fixed part (132, 133) being supported by and fixed to the base plate, a beam sensor (160) for detecting one or more of the beams projected by the column, the beam sensor at least in part being supported by and fixed to the base plate, and a vacuum chamber (110) enclosing the support frame and the column, for maintaining a vacuum environment in the interior space of the chamber, the vacuum chamber formed with the base plate forming part thereof, and supporting a plurality of wall panels (171, 172) including a plurality of side wall panels (171) supported by and fixed thereto.

Abstract: A Charged Particle Microscope includes A specimen holder, for holding a specimen; A source, for producing a beam of charged particles; An illuminator, for directing said beam so as to irradiate the specimen; and A detector, for detecting a flux of radiation emanating from the specimen in response to said irradiation. The illuminator includes: An aperture plate comprising an aperture region in a path of said beam, for defining a geometry of the beam prior to its impingement upon said specimen. The aperture region includes a distribution of multiple holes, each of which is smaller than a diameter of the beam incident on the aperture plate.

Abstract: In order to reduce the amount of time it takes to collect images of defects, this defect inspection device is provided with the following: a read-out unit that reads out positions of defects in a semiconductor wafer that have already been detected; a first imaging unit that takes, at a first magnification, a reference image of a chip other than the chip where one of the read-out defects is; a second imaging unit that takes, at the first magnification, a first defect image that contains the read-out defect; a defect-position identification unit that identifies the position of the defect in the first defect image taken by the second imaging unit by comparing said first defect image with the reference image taken by the first imaging unit; a third imaging unit that, on the basis of the identified defect position, takes a second defect image at a second magnification that is higher than the first magnification; a rearrangement unit that rearranges the read-out defects in an order corresponding to a path that goes

Abstract: The present invention provides, in the preparation of a TEM or STEM sample using FIB-SEM, a technique for obtaining a processing end point on the back surface side of the sample. The state of the sample back surface being processed by the FIB is detected using a Kikuchi pattern formed when electrons that have been injected by the SEM are emitted from the sample back surface. Since this Kikuchi pattern is caused by the crystal structure of the sample back surface, the crystal orientation relative to the injected electron beam, and the crystal lattice constants, detecting the pattern allows the processing end point on the back surface side to be obtained during the FIB processing.

Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.

Abstract: Harmonic feedback atomic force microscopy (HF-AFM) includes regulating feedback in oscillating probe atomic force microscopy (AFM) based upon an extracted frequency component of a probe response signal. Feedback in conventional oscillating probe AFM uses the probe response signal as a whole (or at least a driven frequency component of the probe response signal). The extracted frequency of the extracted frequency component of HF-AFM generally is different from any substantially driven frequency that generates the probe oscillation and may be a harmonic of a driven frequency. The regulating may include responding to the strength or weakness of the extracted frequency component such that weakening (or strengthening) of the extracted frequency component contributes positively to a decrease (or an increase) in the average tip-sample distance and contributes negatively to an increase (or a decrease) in the average tip-sample distance.

Abstract: A method of using a Charged Particle Microscope comprising: A specimen holder, connected to a positioning stage, for holding a specimen; A source, for producing a beam of charged particles; An illuminator, for directing said beam so as to irradiate the specimen; A detector, for detecting a flux of radiation emanating from the specimen in response to said irradiation, comprising the following steps: Providing the microscope with an interferential optical position sensor for determining a position of said specimen holder relative to a reference; Providing an automatic controller with a time-dependent position signal from said optical position sensor; Invoking said controller to use said signal to produce a vibration profile for the microscope.

Abstract: The present invention relates to a device and a method for the stoichiometric analysis of samples. In order to study the spatial distribution of different proteins in the plasma membrane of a complete cell within a short time frame, a device and a method are proposed for the stoichiometric analysis of samples.

Abstract: In order to allow detecting backscattered electrons (BSEs) generated from the bottom of a hole for determining whether a hole with a super high aspect ratio is opened or for inspecting and measuring the ratio of the top diameter to the bottom diameter of a hole, which are typified in 3D-NAND processes of opening a hole, a primary electron beam accelerated at a high accelerating voltage is applied to a sample. Backscattered electrons (BSEs) at a low angle (e.g. a zenith angle of five degrees or more) are detected. Thus, the bottom of a hole is observed using “penetrating BSEs” having been emitted from the bottom of the hole and penetrated the side wall. Using the characteristics in which a penetrating distance is relatively prolonged through a deep hole and the amount of penetrating BSEs is decreased to cause a dark image, a calibration curve expressing the relationship between a hole depth and the brightness is given to measure the hole depth.

Abstract: A plasma light source apparatus includes a first laser generator configured to generate a first laser. A second laser generator is configured to generate a second laser. A chamber is configured to accommodate and seal a medium material for plasma ignition and to allow plasma to be ignited by the first laser and to be maintained by the second laser. An inner surface of the chamber includes two curved mirrors that face each other.

Abstract: An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.

Abstract: In order to enable high-speed imaging of a wide-field image, the imaging method using the electron microscope comprises: irradiating and scanning a wide-field region of the sample with a low-dose amount of electron beam, and acquiring a wide-field image of the sample; setting, from this wide-field image, a narrow-field region; irradiating and scanning this narrow-field region with a high-dose amount of the electron beam, and acquiring a narrow-field image of the sample; determining the noise-removal parameters for the acquired wide-field image and narrow-field image; performing image quality improvement processing on the wide-field image and the narrow-field image; performing drift correction on the narrow-field image undergone the image quality improvement processing; and combining the narrow-field image undergone this drift correction and the wide-field image in such a manner that the visibility of each is at the same level throughout the entirety of the combined image.

Abstract: Methods of fabrication and semiconductor structures includes vertical transport field effect transistors (VTFETs) having a uniform bottom spacer layer between different pattern density regions. The bottom spacer layer can be deposited by plasma vapor deposition.

Abstract: A method for operating a multi-beam particle optical unit comprises includes providing a first setting of effects of particle-optical components, wherein a particle-optical imaging is characterizable by at least two parameters. The method also includes determining a matrix A, and determining a matrix S. The method further includes defining values of parameters which characterize a desired imaging, and providing a second setting of the effects of the components in such a way that the particle-optical imaging is characterizable by the parameters having the defined values.

Abstract: A phase plate capable of suppressing electrification and a method of fabricating the plate are provided. The phase plate is for use in an electron microscope and includes a phase control layer provided with a through-hole and at least one conductive layer covering and closing off the through-hole. The conductive layer is formed on at least one of a first surface and a second surface of the phase control layer, the second surface being on the opposite side of the first surface. The phase control layer produces a given phase difference between electron waves transmitted through the phase control layer and electron waves transmitted through the through-hole.

Abstract: A method for accurately electrically measuring a width of a fin of a FinFET, using a semiconductor fin quantum well structure is provided. The semiconductor fin quantum well structure includes a semiconductor substrate and at least one semiconductor fin coupled to the substrate. Each of the semiconductor fin is sandwiched by an electrical isolation layer from a top and a first side and a second side across from the first side, to create a semiconductor fin quantum well. At least one gate material is provided on each side of the electrical isolation layer. A dielectric layer is provided over the top of the electrical isolation layer to further increase the electrical isolation between the gate materials. The width of the semiconductor fin is measured accurately by applying a resonant bias voltage across the fin by applying voltage on the gate materials from either side. The peak tunneling current generated by the applied resonant bias voltage is used to measure width of the fin.

Abstract: Cantilevers, SPM tips and nanomachining tools are created in the plane of wafers to obtain new and high performance parts. The method produces more parts for any given wafer, then conventional methods and allows every part on any given wafer to be different from any other, permitting great freedom in new SPM and nanomachining techniques and product development.

Abstract: The invention comprises a patient specific tray insert removably inserted into a tray frame to form a beam control tray assembly, which is removably inserted into a slot of a tray receiver assembly proximate a gantry nozzle of a charged particle cancer treatment system. Optionally, multiple tray inserts, each used to control a different beam state parameter, are inserted into corresponding slots of the tray receiver assembly where the multiple inserts are used to control beam intensity, shape, focus, and/or energy. The beam control tray assembling includes an identifier, such as an electromechanical identifier, of the particular insert type, which is communicated to a main controller, such as via the tray receiver assembly along with slot position and/or patient information.

Abstract: Techniques, systems and apparatus are described for a multimode passive detection system (MMPDS). A MMPDS includes a detector assembly of array of drift tubes arranged as detector modules to generate detector signal data representing electrical responses to cosmic ray charged particles passing through respective detector modules and traversing through a volume of interest (VOI). Detector circuitry measures the generated detector signal data and outputs the measured detector signal data as spatially segregated data streams corresponding to respective detector modules. A clock system distributes a master clock signal throughout the detector circuitry.

Abstract: Disclosed is a charged particle beam apparatus wherein a partitioning film capable of transmitting a charged particle beam is provided between a charged particle optical system and a sample, said charged particle beam apparatus eliminating a contact between the sample and the partitioning film even in the cases where the sample has recesses and protrusions. On the basis of detection signals or an image generated on the basis of the detection signals, a distance between a sample and a partitioning film is monitored, said detection signals being outputted from a detector that detects secondary charged particles discharged from the sample due to irradiation of a primary charged particle beam.

Abstract: The invention comprises an apparatus and method of use thereof for determining a charged particle beam state after passage through a final beam modification insert and prior to entering a patient, such as in cancer treatment or tomographic imaging. The insert comprises a range shifter, a known energy absorber, a ridge filter, a focal length altering insert, an aperture defining element, a compensator, and/or a patient specific beam modifier. The monitoring element comprises one or more sheets, configured to emit photons upon passage therethrough of the charged particle beam, where the emitted photons are detected, tested, such as against a predetermined cancer treatment plan, and/or used to aid in three dimensional tomographic image generation.

Abstract: Methods and systems are described herein for producing high radiance illumination light for use in semiconductor metrology based on a confined, sustained plasma. One or more plasma confining circuits introduce an electric field, a magnetic field, or a combination thereof to spatially confine a sustained plasma. The confinement of the sustained plasma decreases the size of the induced plasma resulting in increased radiance. In addition, plasma confinement may be utilized to shape the plasma to improve light collection and imaging onto the specimen. The induced fields may be static or dynamic. In some embodiments, additional energy is coupled into the confined, sustained plasma to further increase radiance. In some embodiments, the pump energy source employed to sustained the plasma is modulated in combination with the plasma confining circuit to reduce plasma emission noise.

Abstract: When VC inspection for a TEG is performed, it is easily detected whether any failure of a contact plug occurs or not by increasing an emission intensity of a contact plug, so that reliability of a semiconductor device is improved. An element structure of an SRAM is formed on an SOI substrate in a chip region. Also, in a TEG region, an element structure of an SRAM in which a contact plug is connected to a semiconductor substrate is formed on the semiconductor substrate exposed from an SOI layer and a BOX film as a TEG used for the VC inspection.

Abstract: An electrical field is applied through an extreme ultraviolet (EUV) photoresist layer along a direction perpendicular to an interface between the EUV photoresist layer and an underlying layer. Secondary electrons and thermal electrons are accelerated along the direction of the electrical field, and travel with directionality before interacting with the photoresist material for a chemical reaction. The directionality increases the efficiency of electron photoacid capture, reducing the required EUV dose for exposure. Furthermore, this directionality reduces lateral diffusion of the secondary and thermal electrons, and thereby reduces blurring of the image and improves the image resolution of feature edges formed in the EUV photoresist layer. The electrical field may be generated by applying a direct current (DC) and/or alternating current (AC) bias voltage across an electrostatic chuck and a conductive plate placed over the EUV photoresist layer with a hole for passing the EUV radiation through.

Abstract: An x-ray analysis apparatus comprises an electron beam assembly for generating a focused electron beam within a first gas pressure environment. A sample assembly is used for retaining a sample within a second gas pressure environment such that the sample receives the electron beam from the electron beam assembly and such that the gas pressure in the second gas pressure environment is greater than the gas pressure within the first gas pressure environment. An x-ray detector is positioned so as to have at least one x-ray sensor element within the first gas pressure environment. The sensor element is mounted to a part of the electron beam assembly which is proximal to the sample assembly and further arranged in use to receive x-rays generated by the interaction between the electron beam and the sample.

Abstract: Apparatus for detecting optical radiation emitted from an array of spots on an object. The apparatus includes a plurality of light guides having respective input ends and output ends, with the input ends ordered in a geometrical arrangement corresponding to the array of the spots. Relay optics collect and focus the optical radiation from the object onto the input ends such that each input end receives the optical radiation from a corresponding one of the spots. Multiple detectors and each coupled to receive the optical radiation from an output end of a respective one of the light guides.

Abstract: The scanning charged particle beam microscope according to the present invention is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: A controller for cantilever-based instruments, including atomic force microscopes, molecular force probe instruments, high-resolution profilometers and chemical or biological sensing probes. The controller samples the output of the photo-detector commonly used to detect cantilever deflection in these instruments with a very fast analog/digital converter (ADC). The resulting digitized representation of the output signal is then processed with field programmable gate arrays and digital signal processors without making use of analog electronics. Analog signal processing is inherently noisy while digital calculations are inherently “perfect” in that they do not add any random noise to the measured signal. Processing by field programmable gate arrays and digital signal processors maximizes the flexibility of the controller because it can be varied through programming means, without modification of the controller hardware.

Abstract: A scanning probe microscope capable of controlling a decrease of the resolution of an objective lens disposed in the scanning probe microscope, and capable of easily carrying out the adjustment of an optical axis of an optical lever using the objective lens. The scanning probe microscope includes: a cantilever having a probe; a light source part radiating beams; a first reflective part reflecting an incident beam (L0) and guiding the incident beam to a reflective surface; a light receiving part receiving the beams; a second reflective part reflecting a reflected beam (L1) and guiding the reflected beam to the light receiving part; and an objective lens disposed to face the cantilever and adopted to observe and capture an area around the cantilever, the objective lens having the number of openings of NA, wherein the first reflective part is disposed at a position between the objective lens and the cantilever.

Abstract: In order to enable the computation of a process window including an arbitrary exposure condition, the present invention comprises: a contour data extraction means for extracting contour data from captured images of a plurality of circuit patterns formed by altering exposure conditions for identical design layouts; a shape variation measurement means for measuring, on the basis of the plurality of sets of extracted contour data, the amount of shape deformation at each edge or local region of the circuit patterns; a variation model computation means for computing, on the basis of the measured amount of shape deformation, a variation model for the contour data of a circuit pattern or a shape corresponding to a prescribed exposure condition; and a process window computation means using the variation model to estimate the amount of shape variation of a circuit pattern or a shape corresponding to an arbitrary exposure condition with respect to a circuit pattern or a shape corresponding to an exposure condition spec

Abstract: A pattern analysis method of a semiconductor device includes extracting a contour image of material layer patterns formed on a wafer, calculating an individual density value (DV) representing an area difference between the contour image and a target layout image, scoring the material layer patterns on the wafer using the individual DV, identifying a failure pattern among the scored material layer patterns, calculating coordinates of the identified failure pattern and displaying the coordinates on a critical dimension-scanning electron microscopy (CD-SEM) image, inputting a reference DV in the computer and automatically sorting the material layer patterns into material layer patterns having a hotspot and material layer patterns not having a hotspot, and reviewing the sorted material layer patterns having the hotspot.

Abstract: Energy dissipation measurements in Frequency Modulation-Atomic Force Microscopy (FM-AFM) should provide additional information for dynamic force measurements as well as energy dissipation maps for robust material properties imaging as they should not be dependent directly upon the cantilever surface interaction regime. However, unexplained variabilities in experimental data have prevented progress in utilizing such energy dissipation studies. The inventors have demonstrated that the frequency response of the piezoacoustic cantilever excitation system, traditionally assumed flat, can actually lead to surprisingly large apparent damping by the coupling of the frequency shift to the drive-amplitude signal. Accordingly, means for correcting this source of apparent damping are presented allowing dissipation measurements to be reliably obtained and quantitatively compared to theoretical models.

Abstract: A measurement method in which a sensing unit acquires surface data of a measurement target while scanning the surface of the measurement target and at least one of the sensing unit and the measurement target is moved in order for the sensing unit to scan the surface along a plurality of fast scan lines on the surface of the measurement target, includes: a first step in which the sensing unit scans a surface along any one fast scan line of the plurality of fast scan lines to acquire the surface data along the any one fast scan line; and a second step in which the sensing unit acquires a surface data along a fast scan line most adjacent to the any one fast scan line while at least one of the sensing unit and the measurement target is moved along the most adjacent fast scan line, after the first step.

Abstract: A method for determining 3D primitive reciprocal basis of an unknown crystal based on a single EBSD pattern includes steps of geometrically correcting all visible Kikuchi bands with the pattern center and the detector distance used for obtaining corresponding reciprocal vectors, and determining components of the corresponding reciprocal vectors in a 3D reciprocal Cartesian coordinate system, so as to obtain a 3D primitive reciprocal basis. The method given in the present invention is able to effectively exclude fake primitive cells; correctly identify the volume of a primitive cell even though the presence of obvious errors in the width of the Kikuchi bands; and successfully determine a 3D primitive reciprocal basis of unknown crystals based on a single EBSD pattern.

Abstract: Systems and methods for using antiprotons for terminating unwanted or undesirable cells which can be used in the treatment of conditions caused by the existence and/or proliferation of such undesirable cells. Such conditions include cardiovascular ailments, Parkinson's disease, wet macular degeneration, endocrine disorders, dermatological ailments, and cancer. Because of the unique nature of antiprotons and their annihilation characteristics, the preferred antiproton delivery device (1010, 1015, 1030) embodiments further incorporate detector arrays (1050a), capable of detecting characteristic emissions in the course of treatment.

Abstract: A positioning apparatus includes a support structure, a positioning structure, and a fixture for retaining MEMS devices. A shaft spans between the support structure and the positioning structure, and is configured to rotate about a first axis relative to the support structure in order to rotate the positioning structure and the fixture about the first axis. The positioning structure includes a pair of beams spaced apart by a third beam. Another shaft spans between the pair of beams and is configured to rotate about a second axis relative to the positioning structure in order to rotate the fixture about the second axis. Methodology entails installing the positioning apparatus into a chamber, orienting the fixture into various positions, and obtaining output signals from the MEMS devices to determine functionality of the MEMS devices.

Abstract: The invention relates to a method of acquiring an Energy Backscattering Pattern image of a sample in a charged particle apparatus, the sample showing a flat surface, the charged particle apparatus equipped with an electron column for producing a finely focused electron beam, a position sensitive detector for detecting EBSP patterns, and a sample holder for holding and positioning the sample, the method comprising the steps of: Positioning the sample with respect to the electron beam, Directing the electron beam to an impact point on the sample, thereby causing backscattered electrons to irradiate the detector, and Acquiring the signal from the detector while the beam is kept stationary, in which The detector is equipped to selectively detect electrons with an energy above a predefined threshold, and The signal of the electrons with an energy above said threshold is used to form an EBSP image.

Abstract: A method and apparatus for imaging a specimen using a scanning-type microscope, by irradiating a specimen with a beam of radiation using a scanning motion, and detecting a flux of radiation emanating from the specimen in response to the irradiation, in the first sampling session {S1} of a set {Sn}, gathering data from a first collection of sparsely distributed sampling points {P1} of set {Pn}. A mathematical registration correction is made to compensate for drift mismatches between different members of the set {Pn}, and an image of the specimen is assembled using the set {Pn} as input to an integrative mathematical reconstruction procedure.

Abstract: The invention relates to a method of performing tomographic imaging involving repeatedly directing a charged particle beam through a sample for a series of sample tilts to acquire a corresponding set of images and mathematically combining the images to construct a composite image. The latter of which consists of, at each of a second series of sample tilts, using a spectral detector to accrue a spectral map of said sample, thus acquiring a collection of spectral maps; analyzing said spectral maps to derive compositional data of the sample; and employing said compositional data in constructing said composite image.

Abstract: An electron spectrometer includes: an energy analyzer section that energy-analyzes electrons emitted from a specimen; a micro-channel plate that amplifies the electrons analyzed by the energy analyzer section; a fluorescent screen that converts the electrons amplified by the micro-channel plate into light; a camera that photographs the fluorescent screen; and an effective range calculation section that calculates an effective range of the fluorescent screen within a camera image photographed by the camera, the effective range calculation section performing a process that acquires a plurality of the camera images photographed while causing the energy analyzer section to analyze the electrons with a different center energy, a process that converts the plurality of camera images respectively into a plurality of spectra, and a process that calculates the effective range of the fluorescent screen within the camera image based on the plurality of spectra.

Abstract: In some embodiments, a method and/or system may include detecting defects in photomasks. The method may include acquiring a first image of a first die. The method may include acquiring a second image of a second die. In some embodiments, the method may include dividing the first and the second image into a number of first and second portions respectively. The method may include reducing one or more differences in sizing of the first and the second portions. In some embodiments, the method may include determining a difference in a function derived from an image intensity between the corresponding first and second portions. The method may include summing the differences in the function between the corresponding first and second portions. The method may include detecting mesoscopic scale defects in the second die.

Abstract: One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible.

Abstract: A single column charged particle source with user selectable configurations operates in ion-mode for FIB operations or electron mode for SEM operations. Equipped with an x-ray detector, energy dispersive x-ray spectroscopy analysis is possible. A user can selectively configure the source to prepare a sample in the ion-mode or FIB mode then essentially flip a switch selecting electron-mode or SEM mode and analyze the sample using EDS or other types of analysis.

Abstract: For the microscopy of an object using a combination of optical microscopy and particle beam microscopy, a microscope slide system comprises an electrically conductive holder, wherein at least one window is configured in the holder, and wherein the holder has the dimensions of a standard glass microscope slide for the optical microscopy; a microscope slide element, which is designed to carry the object for the microscopy and which is designed such that the element can be placed over the window; and a fastening device, which is designed to fix the microscope slide element over the window. By means of said microscope slide system, the object can be analyzed using separate microscopes, without having to relocate the object.

Abstract: This weak signal detection system has: a statistical data acquisition unit which measures the average value or distribution of an input signal in which is noise superimposed on a desired signal, calculates parameters such as the amplitude or noise dispersion of the desired signal, and outputs the calculated data obtained thereby; a nonlinear characteristic unit which outputs a signal having a nonlinear response with respect to the magnitude of the voltage or the current of the input signal; a signal detection ratio evaluation unit which determines whether the output signal from the nonlinear characteristic unit is the desired signal, calculates the detection ratio in the event that the signal is the desired signal, and outputs detection ratio data; a parameter adjustment unit which, on the basis of detection ratio data obtained by the signal detection ratio evaluation unit and calculated data obtained by the statistical data acquisition unit, adjusts a control parameter pertaining to the responsiveness of the

Abstract: Provided is an observation method by an electron microscope, in which a biological sample can be observed as it is alive and a situation that the biological sample is moving can be observed using an electron microscope, and a composition for evaporation suppression under vacuum, a scanning electron microscope, and a transmission electron microscope used in the method. The sample observation method by an electron microscope according to the invention includes applying a composition for evaporation suppression containing at least one kind selected from an amphiphilic compound, oils and fats, and an ionic liquid to the surface of a sample to form a thin film, and covering the sample with the thin film, and displaying an electron microscopic image of the sample, which is covered with the thin film and accommodated in a sample chamber under vacuum, on a display device.

Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.

Abstract: The application relates to a method for analyzing, in particular for imaging, and/or processing of an object as well as a particle beam device for carrying out this method. In particular, the particle beam device of this application is an electron beam device and/or an ion beam device.

Abstract: Embodiments are directed to an information processing system for generating a corrected image of a sample. The system includes a detector, a memory communicatively coupled to the detector, and a post-detection image processor communicatively coupled to the memory and the detector. The detector is configured to detect data of a plurality of moving particles, wherein the data of the plurality of moving particles correspond to an uncorrected image of the sample, and wherein the uncorrected image includes defocus, astigmatism and spherical aberration. The post-detection image processor is configured to generate a corrected image of the sample based at least in part on processing the detected data of the plurality of moving particles.