Abstract: Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

Abstract: A sensor circuit for measuring a physical or chemical quantity comprises a capacitive sensor. A sense and a base electrode of the sensor form a capacitive element with a capacity depending on the quantity. A common electrode of the sensor forms a first and a second parasitic capacitance together with the sense and the base electrode, respectively. The sensor circuit is adapted to store a charge on the capacitive element and to read out the stored charge via the sense electrode. A buffer element is connected between the sense electrode and the common electrode and adapted to drive the common electrode at a voltage applied to the sense electrode.

Abstract: A scanning microscope includes: a charged particle beam source configured to output a charged particle beam to be emitted to a sample; a detector configured to detect charged particles from the sample; and a controller configured to control the charged particle beam source and the detector, wherein the controller changes one or more variable parameters to determine a plurality of different parameter value sets, acquires a measurement result of a temporal change of absorption current in a target sample material under each of the plurality of different parameter value sets, and, based on the measurement results, selects a parameter value set for use in measurement of the target sample from the plurality of different parameter value sets.

Abstract: A device which computes an angular range of illumination of an electron beam in which aberrations in an optical system can be measured efficiently by a tableau method. The device (100) includes an aberration coefficient information acquisition portion (112) for obtaining information about aberration coefficients of the optical system, a phase distribution computing portion (114) for finding a distribution of phases in the electron beam passed through the optical system on the basis of the information about the aberration coefficients, and an angular range computing portion (116) for finding the angular range of illumination on the basis of the distribution of phases found by the phase distribution computing portion (114).

Abstract: A scanning electron microscopy system is disclosed. The system includes a multi-beam scanning electron microscopy (SEM) sub-system. The SEM sub-system includes a multi-beam electron source configured to form a plurality of electron beams, a sample stage configured to secure a sample, an electron-optical assembly to direct the electron beams onto a portion of the sample, and a detector assembly configured to simultaneously acquire multiple images of the surface of the sample. The system includes a controller configured to receive the images from the detector assembly, identify a best focus image of images by analyzing one or more image quality parameters of the images, and direct the multi-lens array to adjust a focus of one or more electron beams based on a focus of an electron beam corresponding with the identified best focus image.

Abstract: A method of determining crystallographic properties of a sample includes: generating first and second electron beams of electrons having first and second mean kinetic energies, respectively; detecting, for each of first locations of a region of the sample, a two-dimensional spatial distribution of electrons incident onto a detection area while directing the first electron beam onto the first locations; generating, for each of the first locations, first data representing the two-dimensional spatial distribution; detecting, for each of second locations of the region of the sample, a two-dimensional spatial distribution of electrons incident onto the detection area while directing the second electron beam onto the second locations; generating, for each of the second locations, second data representing the two-dimensional spatial distribution; and determining the crystallographic properties for target locations of the region based on the first data of the first locations and the second data of the second location

Abstract: An apparatus (7) for detecting radiation, preferably x-ray radiation, the apparatus comprising at least one detector element (11) which comprises an absorber element (1) for the radiation and a nanowire (2) made of a superconducting material in thermally conducting communication with the absorber element (1), wherein cooling means (34) are provided in order to cool the absorber element (1) and the nanowire (2) to a temperature in the range of the transition temperature of the nanowire (2) in an operating state of the apparatus (7) and wherein an evaluation and control unit (6) is provided to determine whether the nanowire (2) is in a superconducting state or not.

Abstract: A device including an imaging-type or a projection-type ion detection system and being capable of performing observation or inspection at high speed with an ultrahigh resolution in a sample observation device using an ion beam is provided. The device includes a gas field ion source that generates an ion beam, an irradiation optical system that irradiates a sample with the ion beam, a potential controller that controls an accelerating voltage of the ion beam and a positive potential to be applied to the sample and an ion detection unit that images or projects ions reflected from the sample as a microscope image, in which the potential controller includes a storage unit storing a first positive potential allowing the ion beam to collide with the sample and a second positive potential for reflecting the ion beam before allowing the ion beam to collide with the sample.

Abstract: We have seen that some waveguides exhibit variable and increasing back reflection of single wavelength illumination over time, limiting their effectiveness and reliability. We have developed approaches to improve the transmission of these waveguides. We have found that by modulating the illumination wavelength over a small wavelength range we can reduce or eliminate this back reflection from the waveguide. In addition, we describe the writing and erasing of gratings within SiON waveguides by forming standing waves. Methods, systems, instruments, and devices are described that provide improved transmission of light through such waveguides.

Abstract: The present disclosure provides a method of reducing coma and chromatic aberration in a charged particle beam device for providing a beam tilt of a charged particle beam. The method includes tilting the charged particle beam with a deflection assembly consisting of two or more electrostatic deflection elements, wherein at least one deflection element of the two or more deflection elements is a post-lens deflector, while the charged particle beam is guided through an essentially coma-free z-position of an objective lens, and reducing off-axis chromatic aberrations with a magnetic deflection element, wherein tilting the charged particle beam reduces coma independent of off-axis chromatic aberrations.

Abstract: A microscopy system includes a microscope apparatus. The microscope apparatus has an objective and a correction device correcting for a spherical aberration, and obtains image data. The microscopy system further includes an estimator that estimates, on the basis of information on a medium placed between the objective and an observation target plane, an amount of spherical aberration that occurs in the microscope apparatus. The microscopy system determines, by use of a contrast value calculated from the image data obtained by the microscope apparatus and an amount of spherical aberration that is estimated by the estimator, a target set value that is a set value of the correction device, the set value corresponding to the amount of spherical aberration that occurs in the microscope apparatus.

Abstract: A scanning electron microscope having a charged particle device that processes a specimen using a charged particle beam, the scanning electron microscope includes: an electron source; a secondary-electron detector that detects secondary electrons generated from the specimen; a backscattered-electron detector that is disposed closer to the electron source than a detection surface of the secondary-electron detector to detect backscattered electrons generated from the specimen; a shielding plate for shielding a detection surface of the backscattered-electron detector; and a moving mechanism that moves the shielding plate. In a state where the shielding plate is moved by the moving mechanism so as to shield the detection surface of the backscattered-electron detector, the shielding plate is located between the detection surface of the backscattered-electron detector and the detection surface of the secondary-electron detector.

Abstract: Atmospheric scanning electron microscope achieves a wide field of view at low magnifications in a broad range of gaseous pressure, acceleration voltage and image resolution. This is based on the use of a reduced size pressure limiting aperture together with a scanning beam pivot point located at the small aperture at the end of electron optics column. A second aperture is located at the principal plane of the objective lens. Double deflection elements scan and rock the beam at a pivot point first at or near the principal plane of the lens while post-lens deflection means scan and rock the beam at a second pivot point at or near aperture at the end of the optics column. The aperture at the first pivot may act also as beam limiting aperture.

Abstract: A microscope is provided with a holder for holding a sample carrier, an imaging unit which comprises a first detector and a first imaging optical system for imaging at least one part of a sample held by the sample carrier along a first optical axis onto the first detector, a control unit and a detection unit which comprises an illuminating module, a second detector and a second imaging optical system. The control unit only analyzes the measured values originating from the analysis area by the second detector in order to determine the direction of the change of position of the focus of the first imaging optical system along the first optical axis with the aim of positioning the boundary surface of the sample carrier directed towards the sample side in the depth of field area of the first imaging optical system.

Abstract: The purpose of the present invention is to eliminate the effort in placement and extraction of samples in observations using transmitted charged particles. A charged particle beam device (601) is characterized by having: a charged particle optical lens tube that irradiates a sample (6) with a primary charged particle beam; a sample stage on which a light emitting member (500) that emits light because of charged particles that have come by transmission internally in the sample (6) or scattering therefrom or a sample platform (600) having the light emitting member (500) is attachably and detachably disposed; and a detector (503) that detects the light emitted by the light emitting member.

Abstract: A multi-beam apparatus for observing a sample with oblique illumination is proposed. In the apparatus, a new source-conversion unit changes a single electron source into a slant virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample with oblique illumination, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means not only forms the slant virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots. The apparatus can provide dark-field images and/or bright-field images of the sample.

Abstract: Apparatus and techniques for extracting information carried in higher eigenmodes or harmonics of an oscillating cantilever or other oscillating sensors in atomic force microscopy and related MEMs work are described. Similar apparatus and techniques for extracting information using contact resonance with multiple excitation signals are also described.

Abstract: In a general aspect, the spin angular momentum of a neutron wave packet is coupled with the orbital angular momentum of the neutron wave packet. In some instances, an initial state of a neutron wave packet is generated. The neutron wave packet in the initial state has a spin angular momentum that is polarized in an axial direction. The neutron wave packet is directed through a quadrupole magnetic field that couples the spin angular momentum of the neutron wave packet with an orbital angular momentum of the neutron wave packet. A spin-orbit state of the neutron wave packet is produced from the quadrupole magnetic field.

Abstract: An electrometer includes a sensing module and a control module. The sensing module includes an electrostatic sensing element. The electrostatic sensing element includes two opposite ends. Each end of the electrostatic sensing element is electrically connected to the control module. When an object with electrostatic charge is near but does not touch the electrostatic sensing element, the resistance of the electrostatic sensing element can be changed. The control module electrically connect to the electrostatic sensing element, the control module measures the resistance variation ?R of the electrostatic sensing element and converts the resistance variation ?R into the static electricity potential.

Abstract: The invention relates to a photon detector (10), in particular an x-ray detector, in the form of a measurement finger, which extends along a detector axis (23) and has a detector head (11) at a first end of the measurement finger, wherein the detector head (11) comprises a plurality of at least two detector modules (22), each comprising a sensor chip (12) sensitive to photon radiation (14), in particular x-radiation, said sensor chip having an exposed end face (13) and a face facing away from the end face (13), wherein the detector modules (22) are arranged around the detector axis (23) in a plane (24) extending orthogonally to the detector axis (23).

Abstract: A scanning electron microscopy system is disclosed. The system includes a multi-beam scanning electron microscopy (SEM) sub-system. The SEM sub-system includes a multi-beam electron source configured to form a plurality of electron beams, a sample stage configured to secure a sample, an electron-optical assembly to direct the electron beams onto a portion of the sample, and a detector assembly configured to simultaneously acquire multiple images of the surface of the sample. The system includes a controller configured to receive the images from the detector assembly, identify a best focus image of images by analyzing one or more image quality parameters of the images, and direct the multi-lens array to adjust a focus of one or more electron beams based on a focus of an electron beam corresponding with the identified best focus image.

Abstract: A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.

Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.

Abstract: A charged particle beam device includes: a charged particle source; an acceleration electric power source connected to the charged particle source for accelerating a charged particle beam emitted by the acceleration electric power source; and an objective lens for focusing the charged particle beam onto a sample, the objective lens including: a central magnetic pole having a central axis coinciding with an ideal optical axis of the charged particle beam; an upper magnetic pole; a cylindrical side-surface magnetic pole; and a disk-shaped lower magnetic pole, the central magnetic pole having an upper portion on a side of the sample and a column-shaped lower portion, the upper magnetic pole having a circular opening at a center thereof and being in a shape of a disk that is tapered to a center thereof and that is thinner at a position closer to a center of gravity of the central magnetic pole.

Abstract: An electrometer includes a sensing module and a control module. The sensing module includes a plurality of electrostatic sensing elements and a plurality of second electrodes. The plurality of electrostatic sensing elements are single walled carbon nanotubes or few-walled carbon nanotubes. The plurality of electrostatic sensing elements and the plurality of second electrodes are alternately arranged in a series connection. The control module is coupled to the two ends of the series connection and configured to measure a resistance variation ?R of the series connection and convert the resistance variation ?R into a static electricity potential.

Abstract: Methods and systems for performing measurements of multiple die with an array of electron beam columns are presented herein. The wafer is scanned in a direction parallel to the die rows disposed on the wafer. The electron beam measurement columns are spatially separated in a column alignment direction. The wafer is scanned in a direction that is oriented at an oblique angle with respect to the column alignment direction such that each electron beam column measures the same row of die features on different die during the same wafer pass. The wafer is oriented with respect to the array of electron beam columns by rotating the wafer, rotating the electron beam columns, or both. In further aspects, each measurement beam is deflected to correct alignment errors between each column and the corresponding die row to be measured and to correct wafer positioning errors reported by the wafer positioning system.

Abstract: A method for crystal analysis includes identifying a crystalline region on a device where an electronic channeling pattern is needed to be determined, acquiring a whole image for each of a plurality of different positions for the crystalline region using a scanning electron microscope (SEM) as the crystalline region is moved to different positions. Relevant regions are extracted from the whole images. The images of the relevant regions are stitched together to form a composite map of a full electron channeling pattern representative of the crystalline region wherein the electronic channeling pattern is provided due to an increase in effective angular range between a SEM beam and a surface of the crystal region.

Abstract: In a charged particle apparatus with an ion pump, which is a charged particle beam apparatus with an ion pump including a charged particle beam irradiation detecting unit for irradiating a sample with a charged particle beam in a chamber and detecting a secondary charged particle, an image processing unit for forming a secondary charged particle image from a detection signal of the detected secondary charged particle, an output unit for processing at the image processing unit and outputting an image, an ion pump for maintaining the interior of the processing chamber in a vacuum state, a driving power supply unit of the ion pump, and a high voltage cable for connecting the ion pump and the driving power supply unit, the driving power supply unit of the ion pump is structured to include a high voltage power supply circuit unit for operating the ion pump, a load current detection circuit unit for detecting a load current applied to the ion pump, and a canceller circuit unit for reducing low frequency noise appli

Abstract: A method of imaging a secondary charged particle beam emanating from a sample by impingement of a primary charged particle beam is provided. The method includes setting a first operating parameter to a first value. The first operating parameter is selected from a group including: landing energy of the primary charged particle beam on the sample, extraction field strength for the secondary charged particle beam at the sample, magnetic field strength of an objective lens that focuses the primary charged particle beam onto the sample, and working distance of the objective lens from the sample. The method further includes controlling, while the first operating parameter is set to the first value, the excitation of a first lens and of a second lens to map the secondary charged particle beam onto a first region on an aperture plate. The first region overlaps with a first opening of the aperture plate and with a second opening of the aperture plate.

Abstract: Disclosed herein are a system and method for imaging low electron yield regions with a charged beam imager. In certain embodiments, a system may include a processor, wherein the processor comprise an image waveform finder, a synthetic image generator and an output image generator; wherein the processor is configured to (i) receive or generate multiple images of a region of the object; wherein the region has an electron yield that is below an electron yield threshold; (ii) process the multiple images to generate multiple synthetic images, and (iii) generate an output image of the region in response to the multiple synthetic images.

Abstract: A magnetic gun lens and an electrostatic gun lens can be used in an electron beam apparatus and can help provide high resolutions for all usable electron beam currents in scanning electron microscope, review, and/or inspection uses. An extracted beam can be directed at a wafer through a beam limiting aperture using the magnetic gun lens. The electron beam also can pass through an electrostatic gun lens after the electron beam passes through the beam limiting aperture.

Abstract: An object of the present invention is to provide a polarized vinylidene fluoride/tetrafluoroethylene copolymer resin film that can significantly reduce, when used as an optical film, the deterioration of the quality of video or still images formed by display elements. The present invention provides a polarized vinylidene fluoride/tetrafluoroethylene copolymer resin film having 2,000 or fewer spot defects per m2, the number of spot defects being measured by a defect measurement method; the method using an surface inspection system in which a CCD camera is placed so as to detect defects at an angle of 45 degrees relative to an LED source, defects of the film are read within a rectangular range of 300 mm in a width direction (the direction perpendicular to the scanning direction), and 150 mm in a machine direction (the scanning direction), while the film is scanned under the camera at a rate of 20 m/min; wherein first, defects having a bright area of 1.5 mm2 or less and a dark area of 1.

Abstract: A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 ?m or more and 2.0 ?m or less.

Abstract: An inspection system includes a TDI sensor that integrates amounts of secondary charged particles or electromagnetic waves along a predetermined direction at every timing at which a transfer clock is inputted and sequentially transfers the amounts of secondary charged particles or electromagnetic waves so integrated, and a deflector which deflects, based on a difference between an actual position and a target position of the inspection target, the secondary charged particles or electromagnetic waves directed towards the TDI sensor in a direction in which the difference is offset. The target position is set into something like a step-and-riser shape in which the target position is kept staying in the same position by a predetermined period of time that is equal to or shorter than a period of time from an input of the transfer clock to an input of the following transfer clock and thereafter rises by a predetermined distance.

Abstract: A method for evaluating a specimen includes positioning a detector in an inserted position in which a first distance between a tip of the detector and a plane extending along a surface of the specimen is less than a distance between the plane and a tip of charged particle beam optics. While maintaining the detector at the inserted position, the surface of the specimen is scanned by a primary beam that exits from the tip of the charged particle beam optics. The detector detects x-ray photons and/or charged particles emitted or reflected from the specimen as a result of scanning the specimen with the primary beam. After completion of the scanning, the detector is positioned at a retracted position in which a second distance between the tip of the detector and the plane exceeds a distance between the tip of the charged particle beam optics and the plane.

Abstract: The present invention relates to a scanning electron microscope realized to observe a test sample by detecting back-scattered electrons scattered and emitted from a surface of the test sample in the air without a vacuum chamber which is allowed to observe the test sample in a vacuum state the scanning electron microscope can be useful in minimizing dispersion of electrons of the electron beam passing through the shielding film caused due to electron scattering by focusing the electron beam passing through the shielding film on a top surface of the first back-scattered electron detector disposed between the electron gun and the shielding film to pass an electron beam and configured to detect back-scattered electrons scattered from the test sample since the first back-scattered electron detector is provided with the first planar coil having a magnetic field formed thereon.

Abstract: A method for operating a particle beam microscope includes: setting potentials of a particle source and an object; directing a particle beam onto the object; setting an excitation of a particle-optical lens; generating a dependence between a manipulated variable and the excitation so that the excitation is representable as a monotonic function dependent on the manipulated variable; changing the manipulated variable via an actuating element to focus the particle beam at the object; and determining a target value of the manipulated variable in a manner dependent on the set potentials. The target value virtually corresponds to an ideal excitation of the lens. The particle beam in the case of the ideal excitation is focused at the object. The absolute value of the first derivative of the function in a value range containing the target value is less than in the case of values lying outside of this value range.

Abstract: A testing apparatus for a wafer having a plurality of semiconductor chips, each including one or more vias, includes an electron beam discharging unit, a detecting unit, and a controller. The electron beam discharging unit is configured to discharge an electron beam to a via of one of the semiconductor chips. The detecting unit generates a detection signal corresponding to a current flowing through the via. The controller is configured to record a value of the detection signal in association with a position of the semiconductor chip.

Abstract: Embodiments disclosed herein relate to a method for synthesizing self-assembling nanoparticles with defined plasmon resonances. More particularly, certain embodiments disclosed herein relate to an improved method for synthesizing self-assembling gold nanoparticles by dialyzing samples during the self-assembly process or in presence of a surface to reduce certain subpopulations.

Abstract: An apparatus for inspecting a substrate is described. The apparatus includes an X-Y stage that supports a substrate to be inspected and is operable to move a substrate supported thereby in X and Y directions; and an imaging system including a plurality of beam columns operable to irradiate regions of a substrate supported by the X-Y stage with beams of energy, respectively, discrete from one another. Respective ones of the beam columns are movable relative to others of the electron beam columns.

Abstract: The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.

Abstract: Alignment of multi-beam pattern tools includes generating a test pattern having multiple features with a multi-beam patterning tool, acquiring an image standard associated with a test pattern standard, acquiring an image of a portion of the test pattern, comparing the portion of the image of the test pattern to the image standard to identify one or more irregularities between the portion of the image of the test pattern and the image standard, and adjusting one or more beams of the multi-beam patterning tool based on the one or more identified irregularities between the portion of the image of the test pattern and the image standard.

Abstract: In a charged particle beam device including an objective lens that focuses a charged particle beam; a first deflector that deflects the charged particle beam to emit the charged particle beam to a sample from a direction different from an ideal optical axis of the objective lens; and a second deflector that deflects a charged particle emitted from the sample, a charged particle focusing lens to focus the charged particle emitted from the sample is disposed between the sample and the second deflector and strengths of the objective lens and the charged particle focusing lens are controlled, according to deflection conditions of the first deflector.

Abstract: An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 ?m or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 ?m or less.

Abstract: Electron microscope support structures and methods of making and using same. The support structures are generally constructed using semiconductor materials and semiconductor manufacturing processes. The temperature of the support structure may be controlled and/or gases or liquids may be confined in the observation region for reactions and/or imaging.

Abstract: An electron beam irradiation device includes a stage, a main body unit, and a first mechanism. The main body unit includes a substrate, first members, and a first layer. The first members are arranged to be separated in a second direction intersecting a first direction and is provided at a first surface of the substrate opposing the stage. The first layer is provided between the stage and the first members and between the stage and the substrate. The first layer converts a light ray into an electron beam. The first mechanism is provided in the stage and moves the stage in the second direction. A distance of the movement is not less than a spacing between a center in the second direction of the first member and a center in the second direction of one other first member adjacent to the first member.

Abstract: A charged-particle-beam device used for measuring the dimensions, etc., of fine circuit patterns in a semiconductor manufacturing process, wherein corrections are made in the defocusing and astigmatism generated during changes in the operating conditions of a Wien filter acting as a deflector of secondary signals such as secondary electrons, and the display dimensions of obtained images are kept constant. In the charged-particle-beam device, the Wien filter (23) is arranged between a detector and a lens (11) arranged on the test-sample side among two stages of lenses for converging a charged-particle beam, and a computing device (93) is provided for the interlocked control of the Wien filter (23) and a lens (12) arranged on the charged-particle-source side among the two stages of lenses.

Abstract: A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam areas, each beam area comprising a plurality of sub-beam apertures arranged in a non-regular hexagonal pattern, the sub-beam apertures arranged so that, when projected in a first direction onto a line parallel to a second direction, the sub-beam apertures are uniformly spaced along the line, and wherein the first direction is different from the second direction. The system further comprises a beamlet aperture array with a plurality of beamlet apertures arranged in one or more groups. The beamlet aperture array is arranged to receive the sub-beams and form a plurality of beamlets at the locations of the beamlet apertures of the beamlet array.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

Abstract: A method for inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device having an optical axis. The method includes generating a primary charged particle beam; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; and correcting a field curvature of the charged particle beam device with a first and a second field curvature correction electrode. The method further includes applying a voltage to the first and to the second field curvature correction electrode. At least one of the field strength provided by the first and the second field curvature correction electrode varies in a plane perpendicular to the optical axis of the charged particle beam device. The method further includes focusing the primary charged particle beamlets on separate locations on the specimen with an objective lens.