Abstract: A device for detecting electromagnetic radiation, including a readout circuit, which is located in a substrate, and an electrical connection pad, which is placed on the substrate, including a metal section that is raised above the substrate and electrically connected to the readout circuit. The detection device furthermore includes a protection wall that extends under the raised metal section so as to define therewith at least one portion of a cavity, and what is called a reinforcing layer section that is located in the cavity and on which the raised metal section rests.

Abstract: A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSe2 and MoSe2, is based on a chemical vapor deposition approach that uses H2Se or alkyl or aryl selenide precursors to form a reactive gas. The gaseous selenium precursor may be introduced into a tube furnace containing a metal precursor at a selected temperature, wherein the selenium and metal precursors react to form metal chalcogenide monolayers.

Abstract: An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.

Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, such as proximity sensing or optical ranging devices. One embodiment is directed to an optical sensor package that includes a substrate, a sensor die coupled to the substrate, a light-emitting device coupled to the substrate, and a cap. The cap is positioned around side surfaces of the sensor die and covers at least a portion of the substrate. The cap includes first and second sidewalls, an inner wall having first and second side surfaces and a mounting surface, and a cover in contact with the first and second sidewalls and the inner wall. The first and second side surfaces are transverse to the mounting surface, and the inner wall includes an opening extending into the inner wall from the mounting surface. A first adhesive material is provided on the sensor die and at least partially within the opening, and secures the inner wall to the sensor die.

Abstract: A short wave infrared polarimeter comprising a pixelated polarizer array and an Indium-Gallium-Arsenide (“InGaAs”) focal plane array. The short wave infrared polarimeter optionally includes a micro-lens array and/or an aperture layer.

Abstract: Systems and methods for a multi-band position sensor and a multi-band optical detector are disclosed. This system comprises a dual-axis, lateral-effect position sensor for locating spots of light that has energy in two wavelength bands. This sensor senses the time-varying intensities of the light in each of the two wavelength bands. This sensor also provides the location of the spot of light on the light-detecting plane of the sensor. Examples are provided for light of two mid-wave infrared (MWIR) wavelength bands or of a short-wave infrared (SWIR) and a MWIR band. This sensor approach, could be applied to detect light of other wavelength bands, such as a combination of a MWIR and a long-wave infrared (LWIR) band. This concept is extended to an array of detectors for multi-band optical detection and multi-source location and tracking. Monolithic chip level fabrication of the multi-band detectors is also discussed.

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

Abstract: The infrared scene projector has a support structure having an airtight chamber; an image projector secured to the support structure; a conversion chip having a substrate secured to the support structure, and an array of conversion units received on a face of the substrate, the array of conversion units being enclosed inside the airtight chamber and being optically coupled to the image projector, each one of the conversion units having at least one supporting post secured to the face of the substrate and a suspended platform held spaced apart from the face of the substrate by the at least one supporting post, the conversion chip being adapted to convert at least one of visible and near-infrared light received from the image projector into infrared radiation; and an infrared beam path extending away from the array of conversion units.

Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.

Abstract: Systems and methods may be provided for forming enhanced infrared absorption microbolometers. An enhanced infrared absorption microbolometer may include a metal cap formed from a thin layer of oxidizing metal such as titanium and/or a titanium oxide. The metal cap may be formed within a bridge portion of the microbolometer. The bridge portion may include other layers such as first and second absorber layers disposed on opposing sides of a layer of temperature sensitive resistive material. The layer of temperature sensitive resistive material may be located between the metal cap and a reflecting metal layer formed on a readout integrated circuit for the microbolometer.

Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.

Abstract: A detector for detecting single photons of infrared radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. The graphene sheet has two contacts connected to an amplifier, a power detector, and a pulse detector. An infrared photon absorbed by the graphene sheet from the evanescent waves heats the graphene sheet, which increases the Johnson noise generated at the contacts. The Johnson noise is amplified and the absorption of a photon is detected by the power detector and pulse detector.

Abstract: A hyperspectral optical element for monolithic detectors is provided. In one embodiment, for example a hyperspectral optical element includes a faceplate layer adapted to be mounted on top of a monolithic detector. The faceplate layer comprises a reflective inner surface. A notched layer includes a plurality of notched surfaces and is mounted to the faceplate layer. The notched surfaces oppose the reflective inner surface of the faceplate and define a plurality of variable depth cavities between the reflective inner surface of the faceplate layer and the plurality of notched surfaces of the notched layer. The faceplate layer and the notched layer are substantially transparent to a received signal and the plurality of variable depth cavities provides resonant cavities for one or more wavelengths of the received signal.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: A device for detecting electromagnetic radiation is provided, including a substrate; a matrix of thermal detectors disposed on the substrate; and a structure encapsulating the matrix of thermal detectors, including an encapsulating layer extending continuously around and above the matrix of thermal detectors so as to define with the substrate a cavity in which the matrix of thermal detectors is disposed, the encapsulating layer including at least one internal bearing section, which bears directly against the substrate between two adjacent thermal detectors of said matrix, said at least one internal bearing section including a sidewall and a peripheral wall, the sidewall being separate from the peripheral wall in a plane parallel to a plane of the substrate, and the peripheral wall encircling the matrix of thermal detectors.

Abstract: An infrared thermopile sensor, an electronic device, and a method for fabricating an infrared thermopile sensor using a front-end process that employ example techniques in accordance with the present disclosure are described herein. In an implementation, the infrared thermopile sensor includes a silicon substrate that has been implanted during front-end processing to form an implant region; a passivation layer disposed on a first side of the silicon substrate, where the passivation layer forms a membrane; and an interlayer dielectric formed on the passivation layer, where the interlayer dielectric includes at least one thermopile that includes at least one thermocouple in series; and at least one metallic interconnect that electrically couples the at least one thermopile to a bond pad; and at least one bond pad interconnect that electrically couples the implant region to the bond pad.

Abstract: Disclosed is a semiconductor radiation detector for detecting X-ray and/or gamma-ray radiation. The detector comprises a converter element for converting incident X-ray and gamma-ray photons into electron-hole pairs, at least one cathode, a plurality of detector electrodes arranged with a pitch (P) along a first axis, a plurality of drift electrodes, a readout circuitry being configured to read out signals from the plurality of detector electrodes; and a processing unit connected to the readout circuitry and being configured to detect an event in the converter element. The readout circuitry is further configured to read out signals from the plurality of drift electrodes, and the processing unit is further configured to estimate a location of the event along the first axis by processing signals obtained from both the detector electrodes and the drift electrodes, the location of the event along said first axis is estimated with a precision being greater than the pitch (P).

Abstract: A method makes an electromagnetic radiation detecting device including at least one thermal detector with an absorbent membrane suspended above a substrate, intended to be located in a sealed cavity. The method includes depositing, on the substrate, a gettering metallic layer including a metallic material with a gettering effect; depositing a carbonaceous sacrificial layer of amorphous carbon on the gettering metallic layer; depositing at least one sacrificial mineral layer on the carbonaceous sacrificial layer; chemical-mechanical planarization of the sacrificial mineral layer; fabricating the thermal detector so that the absorbent membrane is produced on the sacrificial mineral layer; removing the sacrificial mineral layer; and removing the carbonaceous sacrificial layer.

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

Abstract: A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×10?13 A or less is used as a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.

Abstract: Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.

Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps.

Abstract: An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.

Abstract: A component suitable for miniaturization and comprising acoustically decoupled functional structures is specified. The component comprises a first functional structure, a first thin-film cover, which covers the first functional structure, and a second functional structure above the thin-film cover. The thin-film cover does not touch the first functional structure.

Abstract: Techniques are disclosed for systems and methods using silicon photomultiplier (SiPM) based radiation detectors to detect radiation in an environment. An SiPM-based radiation detection system may include a number of detector assemblies, each including at least one scintillator providing light to a corresponding SiPM in response to ionizing radiation entering the scintillator. The radiation detection system may include a logic device and a number of other electronic modules to facilitate reporting, calibration, and other processes. The logic device may be adapted to process detection signals from the SiPMs to implement different types of radiation detection procedures. The logic device may also be adapted to use a communication module to report detected radiation to an indicator, a display, and/or a user interface.

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract: A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

Abstract: A radiation detection technique employs field enhancing structures and electroluminescent materials to converts incident Terahertz (THz) radiation into visible light and/or infrared light. In this technique, the field-enhancing structures, such as split ring resonators or micro-slits, enhances the electric field of incoming THz light within a local area, where the electroluminescent material is applied. The enhanced electric field then induces the electroluminescent material to emit visible and/or infrared light via electroluminescent process. A detector such as avalanche photodiode can detect and measure the emitted light. This technique allows cost-effective detection of THz radiation at room temperatures.

Abstract: A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 ?m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Abstract: A thermo-electric cooling (TEC) system is presented for cooling of a device, such a laser for example. The TECT system comprises first and second heat pumping assemblies, and a control unit associated at least with said second heat pumping assembly. Each heat pumping assembly has a heat source from which heat is pumped and a heat drain through which pumped heat is dissipated. The at least first and second heat pumping assemblies are arranged in a cascade relationship having at least one thermal interface between the heat source of the second heat pumping assembly and the heat drain of the first heat pumping assembly, the heat source of the first heat pumping assembly being thermally coupled to the electronic device which is to be cooled by evacuating heat therefrom.

Abstract: A detector for detecting single photons of infrared radiation or longer wavelength electromagnetic radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. In other embodiments a transmission line or antenna is coupled to the graphene sheet and guides longer-wavelength photons to the graphene sheet. A photon absorbed by the graphene sheet heats the graphene sheet. Part of the graphene sheet is part of the Josephson junction as the weak link, and a constant bias current is driven through the Josephson junction; an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.

Abstract: A night vision system and method for imaging an object at or near room temperature and in the wavelength region up to 2.5 microns is described. The includes a photodetector having a cut-off wavelength of 2.5 microns under the room temperature, an optical system configured for collecting light and focusing the collected light onto the photodetector, and a spectral filter located in an optical path of light propagating toward the photodetector. The spectral filter is configured and operable to selectively filter out light of wavelength shorter than a predetermined value, thereby gradually shifting operation of the night vision system from mostly reflection mode to a combined reflection and thermal mode, to allow the night vision system to detect light reflected from and emitted by the object being imaged.

Abstract: A bolometric detector of LWIR wavelengths, including: a substrate; a membrane suspended above the substrate by supporting elements; an absorbing element comprising several MIM structures each formed with a lower metal element, an upper metal element specific to each MIM structure and with a dielectric element positioned between the lower and upper metal elements; a thermometric element comprising at least one thermometric material; wherein: the membrane includes the upper metal element, the thermometric material and one portion of the dielectric element of each MIM structure, the upper metal elements of at least two MIM structure have different dimensions relatively to each other in the main plane of the membrane, and the dielectric element of each of the MIM structures includes at least one of the following materials having vibrational modes in the LWIR range: Al2O3, AlN, TiO2.

Abstract: The present invention relates to a detection device (6) for detecting photons emitted by a radiation source (2). The detection device (6) is configured to detect the photons during a first time period. The detection device (6) comprises a sensor (10) having an intermediate direct conversion material for converting photons into electrons and holes, a shaping element (20), and a compensation unit (450, INT, 950). The compensation unit (450, INT, 950) is adapted to provide a compensation signal based on the electrical pulse and on a photoconductive gain of said sensor (10). The core of the invention is to provide circuits to reduce artifacts due to inherent errors with direct conversion detectors in spectral computed tomography by determining a compensation current, by detecting or monitoring a baseline restorer feedback signal, or by ignoring signals above the baseline level.

Abstract: A detector for detecting single photons of infrared radiation or longer wavelength electromagnetic radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. In other embodiments a transmission line or antenna is coupled to the graphene sheet and guides longer-wavelength photons to the graphene sheet. A photon absorbed by the graphene sheet heats the graphene sheet. Part of the graphene sheet is part of the Josephson junction as the weak link, and a constant bias current is driven through the Josephson junction; an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.

Abstract: A pixel for converting incident subatomic particles into an output voltage signal is disclosed. In one aspect, the pixel includes a photo-detector adapted to receive incident subatomic particles and generate an input voltage signal corresponding to an intensity of the received particles. The pixel also includes a passive amplifier adapted to passively amplify the input voltage signal to generate an output voltage signal. The passive amplification reduces the noise of the output voltage signal, and may have a higher quantum efficiency than typical in-pixel amplification devices and methods.

Abstract: The present publication describes a heat-resistant optical layered structure, a manufacturing method for a layered structure, and the use of a layered structure as a detector, emitter, and reflecting surface. The layered structure comprises a reflecting layer, an optical structure on top of the reflecting layer, and preferably shielding layers for shielding the reflecting layer and the optical structure. According to the invention, the optical structure on top of the reflecting layer comprises at least one partially transparent layer, which is optically fitted at a distance to the reflecting layer.

Abstract: A temperature sensor, including a conduction path, between a line at a supply voltage and a common ground terminal of the temperature sensor, including a capacitor, a resistor and a reverse biased diode a junction temperature of which is to be sensed; a digital circuit coupled with the capacitor, the resistor and the diode, configured to compare a charge voltage of the capacitor with an upper threshold voltage and with a lower threshold voltage, and to generate in operation an output sense signal that switches to a first logic level when the charge voltage attains the lower threshold voltage and to a second logic level when the charge voltage attains the upper threshold voltage, the digital circuit being configured to connect the resistor electrically in parallel with the capacitor to discharge the capacitor when the output sense signal is at the second logic level, and to connect the capacitor so as to be charged by a reverse saturation current flowing throughout the reverse biased diode when the output sens

Abstract: A detection device and a method of manufacturing the same are disclosed. The detection device includes a detection module and a housing module disposed on the detection module. The detection module includes a substrate, an emission unit, and a detection unit. The substrate includes an emission end area on which the emission unit is disposed, and a receiver end area on which the detection unit is disposed. The housing module includes a plastic housing unit having a receiving space and an opening, and a metallic shielding unit disposed on the plastic housing unit. The receiving space is divided into a first receiving space and a second receiving space by the metallic shielding unit, and the opening is divided into an emission hole and a detection hole by the metallic shielding unit. By the above-mentioned means, the distance between the emission hole and the detection hole is reduced.

Abstract: An electro-optical device may include a first substrate, a second substrate, a seal member between the first substrate and the second substrate, and a first conductive layer and a second conductive layer between the first substrate and the seal member. The first substrate may include a pixel area and a seal region around the pixel area and in which the seal member is provided. The first conductive layer may include a first pattern having a first edge and a second edge, the second conductive layer may include a second pattern having a third edge and a fourth edge, the first edge may be arranged at an inner side of the second pattern and closest to the third edge, the second edge may be arranged at the inner side of the second pattern and closest to the fourth edge, and the second pattern may overlap with the first pattern.

Abstract: A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device.

Abstract: A method for designing a photodetector comprising an array of pixels: selecting at a material composition for the photodetector; determining a configuration of at least one pixel in the array of pixels using a computer simulation, each pixel comprising an active region and a diffractive region, and a photodetector/air interface through which light enters, the computer simulation operating to process different configurations of the pixel to determine an optimal configuration for a predetermined wavelength or wavelength range occurring when waves reflected by the diffractive element form a constructive interference pattern inside the active region to thereby increase the quantum efficiency of the photodetector. An infrared photodetector produced by the method.

Abstract: Embodiments relate to photodetectors comprising: a substrate and a bulk-alloy infrared (IR) photo absorption layer disposed on the substrate to absorb photons in an infrared wavelength and having a graded section and an ungraded section. The photodetector comprises a unipolar barrier layer disposed on the bulk-alloy photo absorption layer. The graded section includes a graded alloy composition such that its energy bandgap is largest near the substrate and smallest near the unipolar barrier layer. The embodiments also relate to methods fabricating the photodetectors.

Abstract: The present invention herein relates to a method of forming a through-hole in a silicon substrate. The present invention herein also relates to a method of forming an electrical connection element which penetrates through the silicon substrate, and to a semiconductor device manufactured thereby. More particularly, the present invention herein relates to a method of forming in a silicon substrate a through-hole capable of reducing roughness in a side wall of the through-hole and exhibiting low permittivity, by alternatingly laminating cationic and anionic polymer on the through-hole that has a dent on the side wall to form a porous elastic layer, and also relates to a method of forming an electrical connection that penetrates through the silicon substrate, and to a semiconductor device manufactured thereby.

Abstract: An optical sensor arrangement (10) comprises a light sensor (11) that is connected to a summation node (13) and is designed for generating a sensor current (S2), a current source (S2) connected to the summation node (13) and designed to provide a source current (S3), and an integrator (21) that is coupled to the summation node (13) and is designed for generating a first value (VP1) of an integrator signal (S6) by integrating during a first phase (P1) and for generating a second value (VP2) of the integrator signal (S6) by integrating during a second phase (P2). The optical sensor arrangement (10) comprises a sum and hold circuit (31) that is coupled to the integrator (21) and is designed to generate an analog output signal (S7) as a function of a difference of the first value (VP1) and the second value (VP2) of the integrator signal (S6).

Abstract: The invention relates to an optical absorber comprising a semiconductor micro or nano scale structured array configured for transmission of electromagnetic (EM) radiation when in a passive state and for absorption and/or reflection of electromagnetic (EM) radiation when in an active state. The absorber also includes an activator arranged to inject free carriers into the structured array to activate said array on demand.

Abstract: A device images radiation from a scene. A detector is sensitive to the radiation in a first wavelength band. A lens forms an image of the scene on the detector. A filtering arrangement includes two sets of radiation absorbing molecules. A control unit switches the filtering arrangement between two states. In the first state, all of the radiation in the first wavelength band is transmitted to the detector. In the second state, the radiation in a second wavelength band within the first wavelength band is absorbed by the radiation absorbing molecules. The control unit synchronizes the switching of the filtering arrangement with the detector. Each pixel of the image formed on the detector includes two signals. The first signal includes information from the scene radiation in the first wavelength band. The second signal excludes information from the scene radiation absorbed by the filtering arrangement in the second wavelength band.

Abstract: A camera module is disclosed including an image sensor having an associated optical filter configured to receive a first set of one or more wavelengths of light, and a housing around the image sensor. The housing has an associated optical filter configured to allow a second set of one or more wavelengths of light to pass through the housing and to block the first set of one or more wavelengths of light from passing through the housing. In examples, the second set of one or more wavelengths of light may be light in the visible range of wavelengths, and the housing may be transparent.

Abstract: An integrated focal plane provides two co-aligned, overlapping pixel arrays in two formats, one with large pixels and low pixel count, the other with small pixels and high pixel count. Typically, the large pixels are 10 to 100 times larger in area than the small pixels. The dual arrays are disposed in a single detector substrate flip-chip bonded to a single readout circuit. They are sensitive to two infrared colors, one shorter and one longer wavelength band. The dual array focal plane concurrently provides two distinct pixel instantaneous fields of view within the same overall field of view as well as simultaneous fast and slow frame rates. The dual frame rates allow for combined fast sensing with sensitive imaging. Differing spatial and temporal data enables enhanced image processing for improved clutter rejection and detection performance. Differing gains combined with the dual frame rates provide an extended dynamic range.

Abstract: An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The detector also may include a second absorber region comprising a second absorber material that absorbs light of a shorter wavelength than the light absorbed by the multiple discrete absorber regions of the first absorber material. The geometric shapes may extend only through the first absorber material. Alternatively, the geometric shapes may extend partially into the second absorber region. The detector has a metal reflector coupled to the multiple discrete absorber regions. The detector also has a substrate containing the discrete absorber regions and the second absorber region. The substrate can further include geometric shaped features etched into the substrate, with those features formed on the side of the substrate opposite the side containing the discrete absorber regions and the second absorber region.