Abstract: A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array.

Abstract: A writing area of a sample is divided into a plurality of stripes having a width corresponding to an area density of a pattern to be written on the sample with a charged-particle beam. The writing is stopped when writing of at least one stripe is terminated, and a drift amount is measured. An irradiation position of the charged-particle beam is corrected with the use of the drift amount. When the average value of the area density is more than a predetermined value, a stripe has a width smaller than the reference width, and when the average value of the area density is less than the predetermined value, the stripe has a width larger than the reference width. The width of the stripe is preferably a width corresponding to the variation of a drift from the beginning of irradiation with the charged-particle beam.

Abstract: A multi charged particle beam writing apparatus includes a stage to mount a target object thereon and to be movable, an emission unit to emit a charged particle beam, an aperture member, in which a plurality of openings are formed, to produce multiple beams by letting a region including the whole of a plurality of openings be irradiated with the charged particle beam and letting portions of the charged particle beam respectively pass through a corresponding opening of a plurality of openings, a reduction optical system to reduce the multiple beams, and a doublet lens, arranged at the subsequent stage of the reduction optical system, in which a magnification is 1 and directions of magnetic fluxes are opposite.

Abstract: A charged particle beam lens includes a first electrode including a surface having at least one aperture and a second electrode including a surface having at least one aperture. A support intervenes between the first electrode and the second electrode to electrically insulate the first and second electrodes from each other and to support the first and second electrodes in a predetermined positional relationship. A side surface of the support intervenes between the first electrode and the second electrode and includes a non-flat portion having at least one of a projected portion and a depressed portion, and includes a tapered portion. A taper angle formed by the tapered portion and the surface having the aperture of the second electrode is greater than zero degree and less than ninety degrees.

Abstract: An electron beam writing apparatus comprising a XY stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, wherein a shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a negative voltage constantly to the electrostatic lens.

Abstract: A method for acquiring a settling time according to an embodiment, includes writing a plurality of first patterns, arranged in positions apart from each other by a deflection movement amount, by using a DAC amplifier in which a settling time of the DAC amplifier is set to a first time to be a sufficient settling time; writing a plurality of second patterns, in a manner where corresponding first and second patterns are in a position adjacent, for each second time of different second times containing the sufficient settling time set as variable; measuring a width dimension of each of a plurality of combined patterns after adjacent first and second patterns are combined for the each second time set as variable; and acquiring the settling time of the DAC amplifier needed for deflection by the deflection movement amount, using the width dimensions.

Abstract: Provided is an apparatus for preparing a sample including: a sample stage that supports a sample; a focused ion beam column that applies a focused ion beam to the same sample and processes the sample; and an irradiation area setting unit that sets a focused-ion-beam irradiation area including a first irradiation area used to form an observation field irradiated with an electron beam in order to detect backscattered electrons and a second irradiation area used to form a tilted surface tilted with respect to the normal line of the observation field with an angle of 67.5° or more and less than 90°.

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract: In a particle therapy treatment planning system for creating treatment plan data, the movement of a target (patient's affected area) is extracted from plural tomography images of the target, and the direction of scanning is determined by projecting the extracted movement on a scanning plane scanned by scanning magnets. Irradiation positions are arranged on straight lines parallel with the scanning direction making it possible to calculate a scanning path for causing scanning to be made mainly along the direction of movement of the target. The treatment planning system can thereby realize dose distribution with improved uniformity.

Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

Abstract: A charged particle beam drawing apparatus includes a charged particle beam gun, a first forming aperture member having an opening, wherein a charged particle beam emitted from the charged particle beam gun is passed through the opening of the first forming aperture member, a second forming aperture member having an opening, wherein the charged particle beam passed through the first forming aperture member is passed through the opening of the second forming aperture member, a movable stage for supporting a workpiece, wherein patterns corresponding to figures in a drawing data are drawn on the workpiece by the charged particle beam passed through the second forming aperture member, and a drawing data correcting process portion for moving the figures in the drawing data on the basis of positions in the opening of the second forming aperture, where the charged particle beam for drawing the patterns is passed through.

Abstract: An exposure apparatus for a photoalignment process includes; a first photomask including a plurality of transmission parts; and a second photomask including a plurality of transmission parts, where the first photomask and the second photomask partially overlap each other such that each of the first photomask and the second photomask includes an overlapping region and a non-overlapping region, the overlapping region of at least one of the first photomask and the overlapping region of the second photomask includes at least two subregions, and shapes or arrangements of the transmission parts in the at least two subregions are different from each other.

Abstract: A lithography apparatus measures a position of each sample shot, and obtains a measurement error with respect to each second shot region of the sample shot regions based on a position of each second shot region obtained by first regression calculation based on a measurement value of a position of each first shot region of the sample shot regions, and a measurement value of a position of each second shot region. After forming the pattern in at least one shot region, the apparatus measures a position of each of shot regions of the second shot regions in a partial area, and obtains positions of shot regions in the partial area by second regression calculation based on measurement values of the positions of shot regions in the partial area and the obtained measurement error.

Abstract: The present invention provides a drawing apparatus for performing drawing on a substrate with a charged particle beam, the apparatus including a first member in which an aperture, through which the charged particle beam passes, is formed, a chamber including a first space and a second space which are partitioned by the first member, and a removing device including a first supply device configured to supply a first gas containing unsaturated hydrocarbon to the first space and a second supply device configured to supply a second gas containing ozone to the second space, and configured to remove contamination on the first member by active species generated by reaction of the first gas with the second gas.

Abstract: A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.

Abstract: A beam writing apparatus according to an embodiment includes a selection unit configured to select a dose equation from a plurality of dose equations for calculating a dose of a beam, for each small region of a plurality of small regions made by virtually dividing a writing region of a target workpiece into mesh-like regions, a dose calculation unit configured to calculate a dose of a beam which is shot into a small region of the plurality of small regions, by using a selected dose equation, for the each small region, and a writing unit configured to write a desired pattern in the small region, by using a calculated dose, for the each small region.

Abstract: A drawing apparatus accepts a selection manipulation for selecting the type of shape of a light outgoing ratio function defining a relationship between the position of modulation units included in an optical unit as seen in the direction of the arrangement of the modulation units and a light outgoing ratio from among a plurality of shape type candidates. The drawing apparatus then adjusts the light outgoing ratio of each of the modulation units in accordance with the accepted shape type. While emitting a beam of drawing light of a strip-shaped cross-sectional configuration from the optical unit, the drawing apparatus moves the optical unit relative to a substrate in a direction orthogonal to the direction of the longer dimension of the strip-shaped cross section of the drawing light beam to perform a drawing process on the substrate.

Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.

Abstract: A charged particle beam writing apparatus includes a division/distribution processing unit to divide and distribute processed data into data groups each having an approximately equal data amount respectively, transmitting units to transmit the processed data of the groups such that processed data is transmitted in descending order with respect to order of writing processing for each data group and the groups are transmitted in parallel, memories to store the processed data of the groups such that each of the memories stores processed data of each different one of the groups, a writing order data output unit to output them, regardless of data group and in order of writing processing, and a writing unit to write a pattern on a target workpiece with a charged particle beam, based on the processed data output in the order of writing processing.

Abstract: The present invention provides an electrostatic deflector which deflects a plurality of charged particle beams, the deflector comprising a first electrode member including a plurality of first electrode pairs arranged along a first axis direction in an oblique coordinate system, and a second electrode member including a plurality of second electrode pairs arranged along a second axis direction in the oblique coordinate system, wherein each of the plurality of charged particle beams is deflected by a corresponding first electrode pair of the plurality of first electrode pairs, and a corresponding second electrode pair of the plurality of second electrode pairs.

Abstract: The present invention provides a drawing apparatus which performs drawing on a substrate with a charged particle beam based on drawing data generated from pattern data representing a circuit pattern to be drawn on the substrate, and mark data representing a mark to be drawn on the substrate, the apparatus including an obtaining unit configured to obtain information associated with a positioning accuracy of the charged particle beam relative to the substrate, a determination unit configured to determine a drawing region for the mark based on the obtained information, and a generation unit configured to generate the drawing data by combining the pattern data and the mark data such that the mark is drawn in the determined drawing region.

Abstract: An acquisition method of a charged particle beam deflection shape error includes writing a plurality of figure patterns, each smaller than a deflection region of a plurality of deflection regions, with charged particle beams, at a pitch different from an arrangement pitch of the plurality of deflection regions to be deflected by a deflector that deflects the charged particle beams, synthesizing writing positions of the plurality of figure patterns into one virtual deflection region of the same size as the deflection region, based on a positional relationship between the deflection region including a position where a figure pattern concerned of the plurality of figure patterns has been written and the position where the figure pattern concerned has been written, and calculating, to output, a shape error in the case of writing a pattern in the deflection region, using a synthesized writing position of each of the plurality of figure patterns.

Abstract: A lithograph apparatus that performs writing on a substrate with a plurality of charged particle beams. A blanking deflector array blanks the plurality of charged particle beams. An aperture array blocks n charged particle beam deflected by the blanking deflector array. A sealing mechanism seals an opening or at least one of the blanking deflector array and the aperture array with a shielding material that shields a charged particle beam. A moving mechanism moves the substrate so that the writing is performed with a blankable charged particle beam instead of an unblankable charged particle beam shielded by the shielding material.

Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.

Abstract: A drawing apparatus include: a charged particle optical system configured to generate M×N charged particle beams; a limiting device configured to limit number of charged particle beams that the charged particle optical system emits toward a substrate; and a controller configured, if an abnormal beam that does not satisfy a use condition is present among the M×N charged particle beams, to control the limiting device such that only m rows, each of the m rows including n charged particle beams that are successive without intervention of the abnormal beam.

Abstract: A charged particle beam drawing apparatus includes: a charged particle optical system; a substrate stage; an interferometer configured to measure a position of the stage in the direction of the optical axis of the charged particle optical system; a measuring device configured to measure a characteristic of the charged particle beam; and a controller configured to correct the measurement, obtained by the interferometer, using correction information. The controller is configured to cause first measurement as measurement by the interferometer and second measurement as measurement by the measuring device to be performed in parallel, and to obtain the correction information based on the first measurement and the second measurement obtained with respect to each of the plurality of positions.

Abstract: A charged particle beam writing apparatus according to an embodiment, includes a dose coefficient calculation unit to calculate an n-th dose correction coefficient in iterative calculation of a charged particle beam to be shot in a small region concerned by the iterative calculation, for each small region of small regions made by virtually dividing into mesh-like regions, a change rate calculation unit to calculate, for each small region, a rate of change from an (n-1)th dose correction coefficient to the n-th dose correction coefficient calculated in the iterative calculation, as an n-th change rate, a correction calculation unit to correct, for each small region, the n-th dose correction coefficient by using the n-th change rate, and a dose calculation unit to calculate, for each small region, a dose of a charged particle beam to be shot in a small region concerned by using the n-th dose correction coefficient corrected.

Abstract: A drawing apparatus performs drawing overlaid with a shot formed on a substrate with a plurality of charged particle beams based on a plurality of drawing stripe data that constitute drawing data. The apparatus includes a charged particle optical system configured to generate the plurality of charged particle beams; and a controller configured to generate a plurality of intermediate stripe data as data of a plurality of intermediate stripes, adjacent ones of the plurality of intermediate stripes overlapping with each other, to obtain information on distortion of the shot, and to transform the plurality of intermediate stripe data based on the information on the distortion to generate the plurality of drawing stripe data.

Abstract: The present invention provides a drawing apparatus for performing drawing on a substrate with a charged particle beam, the apparatus including a first member in which an aperture, through which the charged particle beam passes, is formed, a chamber including a first space and a second space which are partitioned by the first member, and a removing device including a first supply device configured to supply a first gas containing unsaturated hydrocarbon to the first space and a second supply device configured to supply a second gas containing ozone to the second space, and configured to remove contamination on the first member by active species generated by reaction of the first gas with the second gas.

Abstract: Provided is a drawing apparatus including a plurality of drawing devices each of which is configured to draw a pattern on a substrate with a plurality of charged particle beams, the plurality of drawing devices performing respective drawings in parallel, the drawing apparatus comprising: a measuring device configured to measure a flatness of the substrate, wherein each of the plurality of drawing devices comprises: a charged particle optical system configured to irradiate the substrate with the plurality of charged particle beams; and a controller configured to control an operation of the charged particle optical system so as to compensate for distortion of the pattern which is determined by data of inclination of a charged particle beam of the charged particle beams with respect to an axis of the charged particle optical system and data of the flatness measured by the measuring device.

Abstract: A charged particle beam writing method includes inputting layout information of a plurality of chips on which pattern formation is to be achieved, setting, using the layout information, a plurality of writing groups each being composed of at least one of the plurality of chips and each having writing conditions differing from each other, setting, for each of the plurality of writing groups, a frame which encloses a whole of all chip regions in the each of the plurality of writing groups, virtually dividing the frame into a plurality of stripe regions in a predetermined direction, with respect to the each of the plurality of writing groups, setting, using the plurality of stripe regions of all the plurality of writing groups, an order of each of the plurality of stripe regions such that a reference position of the each of the plurality of stripe regions is located in order in the predetermined direction regardless of the plurality of writing groups, and writing a pattern in the each of the plurality of stripe

Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first re

Abstract: A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.

Abstract: An energy application device applies optical energy on an adhesion sheet by a light radiator and, subsequently, applies heat energy on the adhesion sheet by a heater. With this arrangement, even the adhesion sheet, which includes an adhesive layer having an energy barrier that cannot be overcome only with optical energy, is enabled to start a photoreaction by overcoming an energy barrier with the heat energy from the heater.

Abstract: A mask drawing method includes: disposing a grounding body provided with a grounding pin at a plurality of different places on a mask substrate to measure resistance values; disposing the grounding body at a position where the resistance value is lowest, among the plural positions where the resistance values are measured; and irradiating an electron beam to the mask substrate to draw a desired pattern.

Abstract: A hybrid ion implantation apparatus that is equipped with shaping masks that shape the two edges of a ribbon-like ion beam IB in the short-side direction, a profiler that measures the current distribution in the long-side direction of the ion beam IB shaped by the shaping masks, and an electron beam supply unit that supplies an electron beam EB across the entire region in the long-side direction of the ion beam IB prior to its shaping by the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam EB at each location in the long-side direction of the ion beam IB according to results of measurements by the profiler.

Abstract: An image acquisition condition necessary to so arrange FOV's as not to overlap along a device shape so that all constituent arreas necessary for electric characteristic measurement may be confined in the FOV's is determined from device shape information (including circuit design data and layout design data) possessed by CAD data. Since, contingently upon the shape of a wiring portion, the wiring portion of a device is expressed by using a plurality of basic constituent figures in combination, a process of arranging FOV's to the individual constituent figures is executed. For a cell portion, a FOV is arranged in reference to a cell outer frame and apexes. At that time, any apex is a starting point of the FOV arrangement process and another apex is an end point of the same process.

Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.

Abstract: A system for electron pattern imaging includes: a device for converting electron patterns into visible light provided to receive an electron backscatter diffraction (EBSD) pattern from a sample and convert the EBSD pattern to a corresponding light pattern; a first optical system positioned downstream from the device for converting electron patterns into visible light for focusing the light pattern produced by the device for converting electron patterns into visible light; a camera positioned downstream from the first optical system for obtaining an image of the light pattern; an image intensifier positioned between the device for converting electron patterns into visible light and the camera for amplifying the light pattern produced by the device for converting electron patterns into visible light; and a device positioned within the system for protecting the image intensifier from harmful light.

Abstract: A charged particle beam writing apparatus according to one aspect of the present invention includes a calculation unit to calculate a dose density that corrects a dimensional variation caused by at least one of a proximity effect, a fogging effect, and a loading effect, and indicates a dose per unit area of a charged particle beam, where the dose density has been modulated based on a dose modulation amount input from outside, a determination unit to determine whether the dose density exceeds an acceptable value, and a writing unit to write a pattern on a target object with the charged particle beam.

Abstract: One embodiment relates to an apparatus for correcting aberrations introduced when an electron lens forms an image of a specimen and simultaneously forming an electron image using electrons with a narrow range of electron energies from an electron beam with a wide range of energies. A first electron beam source is configured to generate a lower energy electron beam, and a second electron beam source is configured to generate a higher energy electron beam. The higher energy beam is passed through a monochromator comprising an energy-dispersive beam separator, an electron mirror and a knife-edge plate that removes both the high and low energy tail from the propagating beam. Both the lower and higher energy electron beams are deflected by an energy-dispersive beam separator towards the specimen and form overlapping illuminating electron beams. An objective lens accelerates the electrons emitted or scattered by the sample.

Abstract: A multi charged particle beam writing method includes calculating first shot positions of multiple beams, each of which includes a distortion amount of an irradiating corresponding beam, in a case of irradiating each beam, based on control grid intervals, calculating first condition positions based on a pre-set condition, each of which is arranged in a corresponding first region surrounded by closest second shot positions of 2×2 in length and width of the first shot positions, calculating, for each of second regions respectively surrounded by closest second condition positions of the first condition positions, an area density of a figure pattern in overlapping with a second region concerned, calculating an irradiation amount or an irradiation time of each beam whose corresponding first shot position is in a corresponding second region, based on an area density, and writing a pattern by irradiating a beam of the calculated irradiation amount or time.

Abstract: Systems and methods cut trenches of multiple widths in a material using a single pass of a laser beam. A first series of laser pulses cut a work surface of the material at a first cutting speed using a first spot size. In a transition region from a first trench width to a second trench width, a second series of laser pulses sequentially change spot sizes while gradually changing from the first cutting speed to a second cutting speed. Then, a third series of laser pulses continue to cut the work surface at the second cutting speed using a second spot size. The method provides for increased depth control in the transition region. A system uses a selectively adjustable optical component in the laser beam path to rapidly change spot size by adjusting a position of a focal plane with respect to the work surface.

Abstract: A method of operating a particle beam system includes determining a deflection amount and a deflection time of a beam deflection module connected to a data network. The method also includes determining an un-blank time of a beam blanking module connected to the data network, and determining a blank time of the beam blanking module connected to the data network. The method further includes generating a data structure which includes plural data records, wherein each data record includes a command representing an instruction for at least one of the modules, and a command time representing a time at which the instruction is to be sent to the data network. In addition, the method includes sorting the records of the data structure by command time, and generating a set of digital commands based on the data structure. Moreover, the method includes sending the digital commands of the set to the network in an order corresponding to an order of the sorted records.

Abstract: An apparatus is disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a means is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract: The present invention provides a charged particle optical system which emits a charged particle beam, the system including an electrostatic lens, and a grid electrode opposed to the electrostatic lens along an optical axis of the electrostatic lens, and configured to form an electrostatic field in cooperation with the electrostatic lens, wherein the grid electrode is configured such that an electrode surface, opposed to the electrostatic lens, of the grid electrode has a distance, from the electrostatic lens in a direction of the optical axis, which varies with a position in the electrode surface.

Abstract: Stored energy is evaluated for each of segmented regions, and using the evaluated stored energy, an optimal irradiation amount for an electron beam is evaluated by a conjugate gradient method. The evaluated stored energy is used instead of calculating a determinant (Apk) in the procedure that includes calculation of the determinant (Apk) from among repeated calculation procedures that follow the conjugate gradient method and seek to answer a simultaneous linear equation (Ax=b) with a matrix (A) as a coefficient. Thus it is possible to evaluate the optimal irradiation amount for an electron beam with a high processing speed and a high degree of accuracy, and without expressly requiring the calculation of Apk, by managing the giant matrix (A) comprising numerous factors according to reduction of lines of circuitry in a circuit pattern.

Abstract: A method and system for exposing a target according to pattern data in a maskless lithography machine generating a plurality of exposure beamlets for exposing the target. The method comprises providing input pattern data in a vector format, rendering and quantizing the input pattern data to generate intermediate pattern data, and re-sampling and re-quantizing the intermediate pattern data to generate output pattern data. The output pattern data is supplied to the lithography machine, and the beamlets generated by the lithography machine are modulated on the basis of the output pattern data.

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.