Abstract: A semiconductor ceramic material which contains no Pb and has a high Curie point, low resistivity, and PTC characteristics is represented by the formula ABO3 wherein A includes Ba, Ca, an alkali metal element, Bi, and a rare-earth element, and B includes Ti. The semiconductor ceramic material contains 5 to 20 molar parts and preferably 12.5 to 17.5 molar parts of Ca per 100 molar parts of Ti. The ratio of the content of the alkali metal element to the sum of the content of the bismuth plus the content of the rare earth element, is preferably from 1.00 to 1.06. The semiconductor ceramic material preferably further contains 0.01 to 0.2 molar parts of Mn per 100 molar parts of Ti.

Abstract: The invention is a bulk-processed thermoelectric material and a method for fabrication. The material measures at least 30 microns in each dimension and has a figure of merit (ZT) greater than 1.0 at any temperature less than 200° C. The material comprises at least two constituents; a host phase and a dispersed second phase. The host phase is a semiconductor or semimetal and the dispersed phase of the bulk-processed material is comprised of a plurality of inclusions. The material has a substantially coherent interface between the host phase and the dispersed phase in at least one crystallographic direction.

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: A bismuth compound, useful as an inorganic anion exchanger used for an encapsulating material for, e.g., semiconductors, has a peak intensity of 900 to 2000 cps at 2?=27.9° to 28.1° and a peak intensity of 100 to 800 cps at 2?=8.45° to 8.55° in a powder X-ray diffraction pattern, and is represented by the following formula (1): Bi(OH)x(NO3)y.nH2O??(1) wherein x is a positive number not less than 2.5 and less than 3, y is a positive number not more than 0.5, x+y=3, and n is 0 or a positive number.

Abstract: Dielectric compositions that include compound of the formula [(M?)1?x(A?)x][(M?)1?y?z,(B?)y(C?)z]O3??(VO)? and protonated dielectric compositions that include a protonated dielectric compound within the formula [(M?)1?x(A?)x](M?)1?y?z(B?)y(C?)z]O3??+h(Vo)?(H*)2h are disclosed. Composite materials that employ one or more of these dielectric compounds together with an electrolyte also are disclosed. Composite material that employs one or more of these dielectric compounds together with an electrochemally active material also are disclosed.

Abstract: This invention discloses the synthesis of a bifunctional La0.6Ca0.4Co1-xIrxO3 (x=0˜1) perovskite compound with a superb bifunctional catalytic ability for the oxygen reduction and generation in alkaline electrolytes. Synthetic routes demonstrated include solid state reaction, amorphous citrate precursor, and mechanical alloying. The interested compound demonstrates notable enhancements over commercially available La0.6Ca0.4CoO3.

Abstract: This invention relates generally to organized assemblies of carbon and non-carbon compounds and methods of making such organized structures. In preferred embodiments, the organized structures of the instant invention take the form of nanorods or their aggregate forms. More preferably, a nanorod is made up of a carbon nanotube filled, coated, or both filled and coated by a non-carbon material. This invention is further drawn to the separation of single-wall carbon nanotubes. In particular, it relates to the separation of semiconducting single-wall carbon nanotubes from conducting (or metallic) single-wall carbon nanotubes. It also relates to the separation of single-wall carbon nanotubes according to their chirality and/or diameter.

Abstract: A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

Abstract: The invention is directed to CVD methods and systems that can be utilized to form nanostructures. Exceptionally high product yields can be attained. In addition, the products can be formed with predetermined particle sizes and morphologies and within a very narrow particle size distribution. The systems of the invention include a CVD reactor designed to support the establishment of a convective flow field within the reactor at the expected carrier gas flow rates. In particular, the convective flow field within the reactor can include one or more flow vortices. The disclosed invention can be particularly beneficial for forming improved thermoelectric materials with high values for the figure of merit (ZT).

Abstract: To provide a cathode active material for a lithium secondary battery, which is low in gas generation and has high safety and excellent durability for charge and discharge cycles even at a high charge voltage. A process for producing a lithium-containing composite oxide represented by the formula LipLqNxMyOzFa (wherein L is at least one element selected from the group of B and P, N is at least one element selected from the group consisting of Co, Mn and Ni, M is at least one element selected from the group consisting of Al, alkaline earth metal elements and transition metal elements other than N, 0.9?p?1.1, 1.0?q<0.03, 0.97?x<1.00, 0?y?0.03, 1.9?z?2.1, q+x+y=1 and 0?a?0.

Abstract: A thermoelectric material and a method of using a thermoelectric device are provided. The thermoelectric material includes at least one compound having a general composition of (Bi1-x-zSbxAz)u(Te1-ySey)w. The component A includes at least one Group IV element, and the other components are in the ranges of 0?x?1, 0?y?1, 0<z?0.10, 1.8?u?2.2, and 2.8?w?3.2. The method of using a thermoelectric device can include exposing the thermoelectric material to a temperature greater than about 173 K.

Abstract: The present invention is directed to pigment compositions with the formula BiwMnxCOyCuzO40, wherein w is between 7 and 9, x is between 3 and 13, y is between 2 and 13, z is between 0.5 and 7 and the sum of w, x, y and z is 26. The invention also is directed to thick film black pigment compositions, conductive single layer thick film compositions, black electrodes made from such black conductive compositions and methods of forming such electrodes, and to the uses of such compositions, electrodes, and methods in flat panel display applications, including alternating-current plasma display panel devices (AC PDP).

Abstract: A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1?x-Bx-chalcognide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ?0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcognide are described.

Abstract: A multi-element metal chalcogenide and a method for preparing the same are provided. According to the present invention, the multi-element metal chalcogenide includes multiple metal elements. According to the present invention, a multi-element metal chalcogenide powder is prepared, and all of the multiple metal elements of the multi-element metal chalcogenide are derived from simple substance powders of the metal elements, and/or one or more alloy powders mixed in accordance with a mole ratio. Then, a solution phase synthesis of the powder of the multi-element metal chalcogenide is conducted under the normal pressure to prepare the multi-element metal chalcogenide. The multi-element metal chalcogenide can be coated to obtain a film or used to make a target and then bombard the target for sputtering a film. In such a way, a selenization process which is conventional in fabricating the semiconductor solar cell is eliminated, thus improving the production yield and efficiency.

Abstract: A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2?nYn??(1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Abstract: A low-cost filled skutterudite for advanced thermoelectric applications is disclosed. The filled skutterudite uses the relatively low-cost mischmetal, either alone or in addition to rare earth elements, as a starting material for guest or filler atoms.

Abstract: The present invention provides a conductive composition and a conductive paste from which a conductive film having a high conductivity and a low thermal expansion coefficient can be formed. The thermal expansion coefficient of an island fixing type conductive layer 10 is compatible with that of a substrate 12. A cracking of the island fixing type conductive layer 10 or a crack in the substrate 12 due to a difference between these thermal expansion coefficients is suitably inhibited. The thermal expansion coefficient of the island fixing type conductive layer 10 is adjusted by ZWP contained in the range from 10 to 55 (wt %) as a low-expansion filler. Thus, compared with the case where other low-expansion filler is added, the conductivity degradation is inhibited. Accordingly, the island fixing type conductive layer 10 having a high conductivity and a high bonding strength is obtained.

Abstract: This invention discloses the synthesis of a bifunctional La0.6Ca0.4Co1-xIrxO3 (x=0˜1) perovskite compound with a superb bifunctional catalytic ability for the oxygen reduction and generation in alkaline electrolytes. Synthetic routes demonstrated include solid state reaction, amorphous citrate precursor, and mechanical alloying. The interested compound demonstrates notable enhancements over commercially available La0.6Ca0.4CoO3.

Abstract: This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.

Abstract: Provided is a cathode active material including a lithium metal oxide of Formula 1 below: Li[LixMeyMz]O2+d ??<Formula 1> wherein x+y+z=1; 0<x<0.33; 0<z<0.1; 0?d?0.1; Me is at least one metal selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Al, Mg, Zr, and B; and M is at least one metal selected from the group consisting of Mo, W, Ir, Ni, and Mg.

Abstract: The present invention is directed to pigment compositions, thick film black pigment compositions, conductive single layer thick film compositions, black electrodes made from such black conductive compositions and methods of forming such electrodes, and to the uses of such compositions, electrodes, and methods in flat panel display applications, including alternating-current plasma display panel devices (AC PDP).

Abstract: The invention is directed to black conductive composition(s), black electrodes made from such compositions and methods of forming such electrodes. In particular, the invention is directed to flat panel display applications, including alternating-current display panel applications. Still further, the invention is directed to composition(s) utilizing conductive metal oxides selected from an oxide of two or more elements selected from Ba, Ru, Ca, Cu, Sr, Bi, Pb, and the rare earth metals and photocrosslinkable polymers. These compositions are particularly useful in making photoimageable black electrodes for flat panel display applications.

Abstract: A thermoelectric conversion material is provided that has not only a higher thermoelectric performance as compared to conventional ones but also semiconducting temperature dependence, i.e. properties that the electrical resistivity decreases with an increase in temperature. The thermoelectric conversion material contains a substance having a layered bronze structure represented by a formula (Bi2A2O4)0.5(Co1-xRhx)O2, where A is an alkaline-earth metal element and x is a numerical value of 0.4 to 0.8. The thermoelectric conversion material of the present invention exhibits good thermoelectric properties over a wide temperature range.

Abstract: The present invention is directed to pigment compositions, thick film black pigment compositions, conductive single layer thick film compositions, black electrodes made from such black conductive compositions and methods of forming such electrodes, and to the uses of such compositions, electrodes, and methods in flat panel display applications, including alternating-current plasma display panel devices (AC PDP).

Abstract: A low-fire ferroelectric composition, includes a lead bismuth titanate compound having a formula represented by: (Bi2O2)x2+(Mm?1TimO3m?1)x2? wherein in represents a number 1 through 5, M represents a combination of bismuth and lead, and x represents a number of cations and anions present in the compound, and a eutectic mixture of lead oxide and bismuth oxide.

Abstract: Compositions are provided comprising aqueous dispersions of electrically conducting organic polymers and a plurality of nanoparticles wherein pH can be adjusted for improved organic electronic device performance. Films deposited from invention compositions are useful as buffer layers in electroluminescent devices, such as organic light emitting diodes (OLEDs) and electrodes for thin film field effect transistors. Buffer layers containing nanoparticles may have a much lower conductivity than buffer layers without nanoparticles. In addition, when incorporated into an electroluminescent (EL) device, buffer layers according to the invention contribute to higher stress life of the EL device.

Abstract: Reacting MnO2, a lithium compound and a bismuth compound produces a lithium battery cathode material for lithium electrochemical systems. The same results can also be achieved by reacting MnO2, lithium, or a compound containing lithium and bismuth, or a compound containing bismuth. Manganese based mixed metal oxides with lithium and bismuth were initially examined as a cathode material for rechargeable lithium and lithium-ion batteries in order to provide a new mixed metal oxide cathode material as the positive electrode in rechargeable lithium and lithium ion electrochemical cells. A stable mixed metal oxide was fabricated through a solid-state reaction between manganese dioxide, a lithium compound and bismuth or a bismuth compound.

Abstract: The present invention provides a manganese bismuth mixed metal oxide cathode material through a solid-state reaction between manganese dioxide, and either bismuth or a bismuth compound in a compound having the general formula MnOy(Bi2O3)x, which affords charge transfer catalytic behavior that allows the cathode to be fully reversible at suppressed charge potentials and increased discharge potentials. The MnOy(Bi2O3)x cathode material may be incorporated into an electrochemical cell with either a lithium metal or lithium ion anode and an organic electrolyte. The present invention provides a compound with the general formula MnOy(Bi2O3)x, where subscript x is between 0.05 and 0.25, subscript y is about 2 and the overcharge protection is not needed as the subscript z approaches 0.0. In the preferred embodiment, a cathode material where subscript x is between 0.05 and 0.135 with the formula MnO2(Bi2O3)0.12 provides the much-needed full reversibility, high voltage stability and reduced charge transfer impedance.

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Abstract: A magnetooptic element whose size is essentially that of a lattice, namely several angstroms in size of magnetic material and which at the same time has its exhibiting magnetooptic effect detectable is provided along with a magnetooptic disk, a memory device and a magnetooptical picture or image display with a storage capacity of several terabits per square inch or more, each using such a magnetooptic element. The magnetooptic element utilizes a gigantic effective magnetic filed based on a spin chirality formed by geometrically configuring the spin orientation and crystallographic structure of a certain solid material.

Abstract: Techniques and compositions for forming an anode electrode having reduced catalyst loading are described herein. These techniques optimize the operation of the anode for use in fuel cells. Formation techniques for the anode are also described herein as well as fuel systems that use the anode.

Abstract: Grain oriented ceramics constituted of a polycrystalline body of a layered cobaltite in which a {001} plane of each grain constituting the polycrystalline body has an average orientation degree of 50% or more by the Lotgering's method. In this case, the layered cobaltite is preferably a layered calcium cobaltite expressed by the following general formula: {(Ca1−xAx)2CoO3+&agr;} (CoO2+&bgr;)y (where A represents one or more elements selected among an alkali metal, an alkaline earth metal and Bi, 0≦×≦0.3, 0.5≦y≦2.0, and 0.85≦{3+&agr;+(2+&bgr;)y}/(3+2y)≦1.15). Such grain oriented ceramics are obtained by molding a mixture of the first powder constituted of a Co(OH)2 platelike powder and the second powder constituted of CaCO3 and the like such that a developed plane of the platelike powder is oriented, and by heating the green body at a predetermined temperature.

Abstract: The present invention relates to a superconducting colloid prepared by an exfoliating multi-layered superconductor, represented by the formula Bi2Sr2Cam−1CumO2m+4+&dgr; (wherein, m is 1, 2 or 3 and &dgr; is a positive number greater than 0 and less than 1) in which a mercuric halide-organic complex is intercalated, a process thereof, a superconducting thin layer prepared using the above superconducting colloid, and a process thereof.

Abstract: The present invention provides the novel thermoelectric materials having, in combination, processability and excellent thermoelectric characteristics, the thermoelectric materials being able to provide n-type thermoelectric characteristics in accordance with the nature of the employed inorganic thermoelectric materials; a thermoelectric device employing the materials; and a method for producing the thermoelectric materials.

Abstract: An Oxide Precursor Powder from the Pb—Bi—Sr—Ca—Cu—O 2223 System can be produced by heat treating powder, produced using the Spray Pyrolysis Process as described in: GB2210605 or EP0681989 between 700° C. and 850° C. in an atmosphere containing between 0.1% and 21% O2. Heat Treatment of the pyrolysis powder under controlled conditions produces a powder with a particular phase composition, that is highly homogeneous and has a small particle size distribution, that is inherently more reactive than powders heat treated in the same way but produced using other processes.

Abstract: A method of fabricating large bulk high temperature superconducting articles which comprises the steps of selecting predetermined sizes of crystalline superconducting materials and mixing these specific sizes of particles into a homogeneous mixture which is then poured into a die. The die is placed in a press and pressurized to predetermined pressure for a predetermined time and is heat treated in the furnace at predetermined temperatures for a predetermined time. The article is left in the furnace to soak at predetermined temperatures for a predetermined period of time and is oxygenated by an oxygen source during the soaking period.

Abstract: A high-melting-point conductive oxide includes a mixture of a powdered Sr compound and Ru compound and/or Ru metal. The mixture is sintered at a primary temperature of 900° C. to 1300° C. in an atmosphere containing oxygen to form a sintered body that is pulverized back to a powder. The powder is given a desired shape that is again sintered, this time at a secondary temperature of 1000° C. to 1500° C. higher than the primary temperature, again in an atmosphere containing oxygen. The high-melting point conductive oxide is used as a heating element for high-temperature use, an electrode material for high-temperature use, a material for high-temperature thermocouple use and a light-emitting material for high-temperature use.

Abstract: This invention provides a complex oxide comprising the features of: (i) being represented by the formula: (A0.4B0.1M0.1)x/0.6Co2Oy wherein A and B are elements differing from each other, each represents Ca, Sr or Ba, M represents Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, 1.7≦x≦2, and 3.8≦y≦5, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 100 K (absolute temperature) or higher and (iii) having an electrical resistivity of 10 m&OHgr;cm or less at a temperature of 100 K (absolute temperature) or higher. The complex oxide of the invention is a material composed of low-toxicity elements existing in large amounts, the material having superior heat resistance and chemical durability and a high thermoelectric conversion efficiency in a temperature range of 600 K or higher which falls in the temperature range of waste heat.

Abstract: A method for determining a base sequence of a nucleotide strand in a sample utilizes a probe including a fluorescent metal-ligand complex coupled to a first oligonucleotide having a sequence complementary to the first fragment of the strand. The first mixture is exposed to an exciting amount of radiation, and the fluorescence of the metal-ligand complex is detected. The first base sequence of the first fragment is identified based on fluorescence of the metal ligand complex. A second probe differing from the first by at least one base is provided. A second base of the second fragment is identified based on the fluorescence of the metal-ligand complex of the second probe. The second base sequence is compared to the first base sequence to identify a difference between the first and second sequences to determine a base sequence of the nucleotide strand.

Abstract: An inorganic-metal composite body exhibiting PTC behavior at a trip point temperature ranging from 40° C.-300° C., including an electrically insulating inorganic matrix having a room temperature resistivity of at least 1×106 &OHgr;·cm, and electrically conductive particles uniformly dispersed in the matrix and forming a three-dimensional conductive network extending from a first surface of said body to an opposed second surface thereof, wherein the composite body has a room temperature resistivity of no more than 10 &OHgr;·cm and a high temperature resistivity of at least 100 &OHgr;·cm. Preferably, the electrically conductive particles are made of a Bi-based alloy containing at least 50 wt % Bi, and have an average diameter, &phgr;ave, of 5-50 &mgr;m and a 3&sgr; particle size distribution of 0.5 &phgr;ave−2.0 &phgr;ave.

Abstract: An organic vehicle is added to and kneaded with a solid component comprising from 5 to 65% by weight of a resistance material having a composition of CaxSr1−x,RuO3 (x is from 0.25 to 0.75 moles) and from 35 to 95% by weight of a non-reducible glass frit to obtain a resistive paste. A substrate is coated with the resistive paste and fired to produce a resistor. The resistive paste can be fired in a neutral or reducing atmosphere. The resistor has any desired resistance value within a broad range including even high resistance values of higher than 10 K&OHgr;, and the reproducibility of the resistor with a desired resistance value is good.

Abstract: A conductive composite sintered body exhibiting PTC behavior, including a high electrical resistance matrix and 20 vol %-40 vol % electrically conductive particles dispersed in the matrix to form an electrically conducting three-dimensional network therethrough. The electrically conductive particles are selected from bismuth, gallium, or alloys thereof, and an average distance between the particles, when viewed in an arbitrary cross-section through the sintered body, is no more than 8 times the average particle diameter of the particles. The resistivity of the sintered body is low at temperatures below the melting point of the electrically conductive material and increases substantially at or above the melting point.

Abstract: A layer-structured oxide exhibiting a paraelectric characteristic and a layer-structured oxide having a preferable remanent polarization, and a process of producing the same. A layer-structured oxide containing Bi, a first component Me, a second component R, and O is produced by heating raw materials at a high temperature of about 1400° C. for several ten minutes by a self-flux method using Bi2O3 as a flux. The first component Me is composed of at least one kind selected from a group consisting of Sr, Pb, Ba, and Ca, and the second component R is composed of at least one kind selected from a group consisting of Nb and Ta. The composition formula of the oxide is expressed by Bi2−aMe1+bR2O9+c where a, b, and c are values in ranges of 0<a<2, 0<b≦0.4, and −0.3≦c≦1.4. The layer-structured oxide exhibits a paraelectric characteristic or a ferroelectric characteristic at a composition in a specific range out of the stoichiometric composition.

Abstract: A process for preparing a solid composite electrolyte comprising at least one compound of the BIMEVOX family is provided. The process comprises at least one step of preparing a mixture of one or more compounds of the BIMEVOX family with one or more chemically inert compounds, at least one step of compacting the mixture obtained, and at least one sintering step during which the temperature reached, over a nonzero time interval, has a value greater than the optimum sintering temperature for the compound of the BIMEVOX family.

Abstract: Precursor solutions are provided to produce thin film resistive materials by combustion chemical vapor deposition (CCVD) or controlled atmosphere combustion chemical vapor deposition (CACCVD). The resistive material may be a mixture of a zero valence metal and a dielectric material, or the resistive materials may be a conductive oxide.

Abstract: A layer crystal structure oxide, and memory element comprising same, comprising bismuth (Bi), a first element, a second element and oxygen (O), wherein the first element is at least one selected from the group consisting of sodium (Na), potassium (K), calcium (Ca), barium (Ba), strontium (Sr), lead (Pb), and bismuth (Bi), the second element is at least one selected from the group consisting of iron (Fe), titanium (Ti), niobium (Nb), tantalum (Ta), and tungsten (W), and the composition ratio of the bismuth with respect to the second element is larger than the stoichiometric composition ratio, wherein, the composition ratio of the bismuth with respect to the first element is in the range of (2±0.17)/(m−1) including the stoichiometric composition ratio 2/(m−1), where m is an integer from, and including, 2 to 5.