Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn +Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation, and subsequently compacting by charging the granule into a mold, followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Abstract: The present disclosure relates to modifications to nanostructure based transparent conductors to achieve increased haze/light-scattering with different and tunable degrees of scattering, different materials, and different microstructures and nanostructures.

Abstract: A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 ?m, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.

Abstract: A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.

Abstract: The present invention relates to a varistor material for a surge arrester with target switching field strength ranging from 250 to 400 V/mm comprising ZnO forming a ZnO phase and Bi expressed as Bi2O3 forming an intergranular bismuth oxide phase, said varistor material further comprising a spinel phase, characterized in that the amount of a pyrochlore phase comprised in the varistor material is such, that the ratio of the pyrochlore phase to the spinel phase is less than 0.15:1.

Abstract: The present invention provides a conductive paste including: a conductive powder particle including a polymer powder and a first low melting point metal and a second low melting point metal which are sequentially provided on a surface of the polymer powder and have different melting points; and a binder mixed in the conductive powder particle, and a method of manufacturing a printed circuit board using the same.

Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.

Abstract: A transparent conductive film of low resistivity excelling in transparency and etching properties; a sputtering target as its raw material; an amorphous transparent electrode substrate having the transparent conductive film superimposed on a substrate; and a process for producing the same. In particular, an amorphous transparent conductive film comprising at least indium oxide and zinc oxide, which contains at least one third metal selected from among Re, Nb, W, Mo and Zr and satisfies the formulae: 0.75?[In]/([In]+[Zn])?0.95 (1) 1.0×10?4?[M]/([In]+[Zn]+[M])?1.0×10?2 (2) wherein [In][Zn] and [M] represent the atomicity of In, atomicity of Zn and atomicity of third metal, respectively. This amorphous transparent conductive film exhibits amorphism ensuring excellent etching processability and exhibits low specific resistance and high mobility.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: The invention relates to a method for producing an article from agglomerated stone, for example a slab for construction or decoration, comprising the following steps: bringing into contact (i) an inorganic filler, (ii) a polyester resin precursor composition and (iii) a powdered electrically conductive component; mixing same to produce a uniform mass; distributing part of the mass on a substrate; pressing the distributed mass in a vibro-compaction press under vacuum conditions; and hardening the mass by means of polymerisation of the polyester resin.

Abstract: A nanoparticle comprising a ternary core comprising Cd, Zn and Se; and a shell comprising Zn and Y, wherein Y is Se or S or a combination thereof. The Cd and Zn are non-homogenously distributed in the ternary core such that the nanoparticle exhibits continuous photoluminescence for extended periods of time. Also provided are methods for preparing and methods of using the nanoparticles which exhibit continuous photoluminescence.

Abstract: Disclosed are a sintered body and a thermoelectric conversion material. The sintered body comprises a manganese-based oxide as a main component, further comprises an oxide A wherein the oxide A represents one or more members selected from among nickel oxides, copper oxide and zinc oxide, and has a relative density of 80% or more and 90% or less.

Abstract: The present invention provides a transparent electrically conductive film and a method for producing the same. The transparent electrically conductive film comprises Zn, Sn and O, wherein the molar ratio Zn/(Zn+Sn) of Zn to the sum of Zn and Sn is 0.41 to 0.55, and is amorphous.

Abstract: A highly heat-resistant fluororesin, such as tetrafluoroethylene resin or tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, is filled with 0.5 to 1 weight % of a non-black insulating pigment that has a heat resistance such that discoloration does not occur when the fluororesin is baked. Green insulating pigment whose main component is a TiO2—CoO—NiO—ZnO system or a ZnO—CoO system, or blue insulating pigment whose main component is a CoO—Al2O3 system or a CoO—Al2O3—Cr2O3 system is used singly or in a combination, as the non-black insulating pigment. A highly arc-resistant insulator is provided that secures an insulating capacity and at the same time that secures an excellent ability to prevent both interior and exterior deterioration of the insulator and that avoids color heterogeneity and localized discoloration.

Abstract: The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

Abstract: The invention is directed to novel methods and compositions useful for improving the performance of electrophoretic displays. The methods comprise adding a high absorbance dye or pigment, or conductive particles, or a conductive filler in the form of nanoparticles and having a volume resistivity of less than about 104 ohm cm, or a charge transport material into an electrode protecting layer of the display.

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract: The invention provides a zinc-oxide-based target, having excellent environmental durability. The target contains zinc oxide as a predominant component, and both titanium (Ti) and gallium (Ga) in amounts of 1.1 at. % or more and 4.5 at. % or more, respectively.

Abstract: In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily of ZnO, in the varistor element body to make the ceramic structure denser Such crystal structure also decreases a ratio of an element tending to degrade the stability of the temperature characteristic of the varistor element, e.g., Si as a firing aid, in the grain boundary between grains. As a result, the varistor element has a stable temperature characteristic, which can decrease change in capacitance and tan ? (thermal conversion factor of resistance) against change in temperature.

Abstract: A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).

Abstract: A composite material of complex alloy is provided and it is the Ceramic-Metal Composite based on a thermoelectric material filled with ceramic material. The composite material is represented by the following general formula (I). A1?xBx ??(I) In the general formula (I), 0.05?X?0.2; A represents a Half-Heusler thermoelectric material and its proportional composition is represented with the following formula (II). (Tia1Zrb1Hfc1)1?y?zNiy Snz ??(II) In the general formula (II), 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 0.25?y?0.35, and 0.25?z?0.35; B represents at least one element selected from a group of C, O, and N.

Abstract: It is an object of the present invention to provide a transparent conductor exhibiting a small increase in resistance value even when used under high-humidity conditions over long periods of time. A transparent conductor in a preferred embodiment comprises indium tin oxide, an additive component having zinc oxide as a main component thereof, and a resin cured product, the content of the additive component being 0.1 to 50 wt % relative to the total amount of indium tin oxide and the additive component.

Abstract: This invention relates to lithium-ion batteries and cathode powders for making lithium-ion batteries where the cathode powder comprises a blend or mixture of at least one lithium transition metal poly-anion and with one or more lithium transition-metal oxide powders. A number of different lithium transition-metal oxides are suitable, especially formulations that include nickel, manganese and cobalt. The preferred lithium transition metal poly-anion is carbon-containing lithium vanadium phosphate. Batteries using the mixture or blend of these powders have been found to have high specific capacity, especially based on volume, high cycle life, substantially improved safety issues as compared to lithium transition-metal oxides, per se, and an attractive electrode potential profile.

Abstract: A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using ?-Al2O3 as a dopant material.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A variable impedance composition according to one aspect of the present invention comprises a high electro-magnetic permeability powder in an amount from 10% to 85% of the weight of the variable impedance composition, and an insulation adhesive in an amount from 10% to 30% of the weight of the variable impedance composition. The incorporation of high electro-magnetic permeability powder including carbonyl metal, such as carbonyl iron or carbonyl nickel, in the variable impedance composition can not only suppress the overstress voltage, but also dampen the transient current. In contrast to the conventional electrostatic discharge (ESD) device, the relatively high electro-magnetic permeability carbonyl metal powder can reduce arcing as well as lower the trigger voltage of the device. The high electro-magnetic permeability characteristics can also absorb the undesirable electro-magnetic radiation that causes corruption of signal and loss of data.

Abstract: Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 500 mass ppm of aluminum oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

Abstract: A production method of a metal oxide precursor layer provided with a substrate, a solution containing a metal ion as a metal oxide precursor, and a process to coat the solution while the temperature of the substrate is adjusted in the temperature range of 50%-150% of the boiling point (° C.) of a main solvent of the solution.

Abstract: Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

Abstract: Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga2O3)/zinc oxide (ZnO) sputtering target (GZO target) improves the conductivity and bulk density of the target by adding trace amounts of specific elements. In other words, it is possible to obtain a target capable of increasing the sintered density, inhibiting the formation of nodules, and preventing the generation of abnormal electrical discharge and particles by improving the component composition. Further, provided are a method of forming a transparent conductive film with the use of the target, and a transparent conductive film formed thereby.

Abstract: Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices include p-type, n-type, and undoped materials of ZnxA1-xOyB1-y, wherein the alloy composition A and B, expressed by x and y, respectively, varies between 0 and 1. Alloy element A is selected from related elements including Mg, Be, Ca, Sr, Cd, and In and alloy element B is selected from a related elements including Te and Se. The selection of A, B, x and y, allows tuning of the material's band gap. The band gap of the material may be selected to range between approximately 1.4 eV and approximately 6.0 eV. ZnxA1-xOyB1-y based tunnel diodes may be formed and employed in ZnxA1-xOyB1-y based multi-junction photovoltaic devices. ZnxA1-xOyB1-y based single and multi-junction photovoltaic devices may also include transparent, conductive heterostructures and highly doped contacts to ZnO based substrates.

Abstract: A composition includes a binder component and a conductive powder and a high-refractive-index powder both dispersed in the binder component, wherein the conductive powder includes 0.1 to 30 mass % of a tin hydroxide powder and 70 to 99.9 mass % of other conductive powder. The composition enables to form a transparent conductive film having excellent scratch resistance, excellent antistatic properties, an extremely high visible light transmittance and a controllable refractive index. Also described is the transparent conductive film. Further described is a display having the transparent conductive film on the display surface.

Abstract: A gallium containing zinc oxide with an improved heat ray shielding function while keeping high transparency to visible light rays is provided. A gallium containing zinc oxide, which has a heat ray shielding function, a gallium content in the range of 0.25 to 25 % by weight, and a carrier electron density ne of 2×1020/ cm3 or higher.

Abstract: Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

Abstract: A kind of manufacturing method for dual functions with varistor material and device has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, which microstructural compositions include a glass substrate with high resistance and three kinds of low-resistance conductive or semiconductive particles in micron, submicron and nanometer size uniformly distributed in the glass substrate to provide with good surge absorbing characteristic.

Abstract: Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. Obtained is a ZnO based sputtering target which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: The present invention relates to nanoparticulate hardening accelerators, to preparations prepared therefrom, in particular masterbatches comprising nanoparticles, and to the use thereof in polymer matrices, in particular surface coatings and printing inks of all types, which make extremely high demands of colour neutrality and/or transparency.

Abstract: The present invention is directed to a thick film composition for use in low temperature co-fired ceramic circuits comprising, based on weight percent total thick film composition: (a) 30-98 weight percent finely divided particles selected from noble metals, alloys of noble metals and mixtures thereof; (b) one or more selected inorganic binders and/or mixtures thereof, and dispersed in (c) organic medium, and wherein said glass compositions are immiscible or partially miscible with remnant glasses present in the low temperature co-fired ceramic substrate glasses at the firing conditions. The present invention is further directed to methods of forming multilayer circuits utilizing the above composition and the use of the composition in high frequency applications (including microwave applications).

Abstract: This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.

Abstract: A composition for an oxide semiconductor thin film, a field effect transistor (FET) using the composition, and a method of fabricating the FET are provided. The composition includes an aluminum oxide, a zinc oxide, and a tin oxide. The thin film formed of the composition remains in amorphous phase at a temperature of 400° C or less. The FET using an active layer formed of the composition has improved electrical characteristics and can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.

Abstract: Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga2O3)/zinc oxide (ZnO) sputtering target (GZO target) improves the conductivity and bulk density of the target by adding trace amounts of specific elements. In other words, it is possible to obtain a target capable of increasing the sintered density, inhibiting the formation of nodules, and preventing the generation of abnormal electrical discharge and particles by improving the component composition. Further, provided are a method of forming a transparent conductive film with the use of the target, and a transparent conductive film formed thereby.

Abstract: An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B.

Abstract: Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

Abstract: Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %.

Abstract: Glass frits, conductive inks and articles having conductive inks applied thereto are described. According to one or more embodiments, glass frits with no intentionally added lead comprise TeO2 and one or more of Bi2O3, SiO2 and combinations thereof. One embodiment of the glass frit includes B2O3, and can further include ZnO, Al2O3 and/or combinations thereof. One embodiment provides for conductive inks which include a glass frit with no intentionally added lead and comprising TeO2 and one or more of Bi2O3, SiO2 and combinations thereof. Another embodiment includes articles with substrates such as semiconductors or glass sheets, having conductive inks disposed thereto, wherein the conductive ink includes glass frits having no intentionally added lead.

Abstract: A fired material including at least one metal atom selected from indium, zinc and tin, at least one alkali metal atom selected from cesium, potassium and lithium, and an oxygen atom, wherein the atomic ratio (alkali metal atom)/(metal atom+alkali metal atom) is 0.1 to 80 at. %.

Abstract: In manufacturing a ceramic multi-layer wiring substrate which is formed by stacking a plurality of ceramic layers and which includes an internal wiring, a ceramic paste is printed using a screen printing process on a part of a ceramic green sheet to be a ceramic layer having the internal wiring formed thereon which part does not include the internal wiring, to form between the ceramic layers a ceramic filling layer including a same ceramic component as that in the ceramic layers which ceramic filling layer is not formed on the internal wiring. The ceramic paste includes a ceramic component, an acrylic resin, and a cellulose resin, and loss factor tan ? of the paste represented by (loss modulus)/(storage modulus) in a dry condition after printing is equal to or greater than loss factor tan ? of a conductor paste layer to be the internal wiring in a dry condition.

Abstract: As for the voltage non-linear resistance element layer 2, a sintered body having ZnO as a main component is used. In this sintered body, Pr, Co, Ca, and either Cu or Ni are added. The ranges are; 0.05 to 5.0 atm % of Pr, 0.1 to 20 atm % of Co, 0.01 to 5.0 atm % of Ca, and 0.0005 to 0.05 atm % of either Cu or Ni. Within these ranges, the capacitance changing rate can be made to equal or less than 10 % at 85° C. when 25° C. is taken as standard.

Abstract: It is an object of the present invention to provide a transparent conductor exhibiting a small increase in resistance value even when used under high-humidity conditions over long periods of time. A transparent conductor in a preferred embodiment comprises indium tin oxide, an additive component having zinc oxide as a main component thereof, and a resin cured product, the content of the additive component being 0.1 to 50 wt % relative to the total amount of indium tin oxide and the additive component.