Tin Compound Patents (Class 252/520.1)
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Publication number: 20130331463Abstract: A method for producing a rutile titanium oxide sol having a particle diameter measured by dynamic light scattering of 5 nm to 100 nm, the method comprising: a process (a): mixing a tin oxalate aqueous solution, a titanium alkoxide, oxalic acid, a quaternary ammonium hydroxide, and water, while adjusting, per mole of titanium atoms, a proportion of tin atoms to be from 0.1 mol to 0.8 mol, a proportion of the oxalic acid to be from 0.01 mol to 5 mol, and a proportion of the quaternary ammonium hydroxide to be from 0.1 mol to 3.5 mol to prepare a titanium-containing aqueous solution having a concentration in terms of TiO2 of 0.1% by mass to 15% by mass; and a process (b): performing hydrothermal treatment on the titanium-containing aqueous solution produced in the process (a) at 100° C. to 200° C.Type: ApplicationFiled: February 15, 2012Publication date: December 12, 2013Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Natsumi Murakami, Ai Miyamoto, Yoshinari Koyama
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Patent number: 8603366Abstract: In an electric contact material of silver matrix capable of resisting arc erosion and containing no cadmium-composite, an Ag—(SnO2+In2O3) composite containing 9˜11% of (SnO2+In2O3) or an Ag—Cu oxide, composite containing 15˜25% of Cu oxide is used. The electrical contact material has a contact resistance of 5˜60 milliohms (mohm) and an arc erosion resistance capability up to 2*103˜10*103 times provided that the Vickers hardness (Hv) of the material is 100˜150, the measured current is 1˜5 amperes, and the measured voltage is 10˜20 volts. Two electrical contacts maintain an arc erosion resisting capability at the condition of a low contact resistance when the electrical contact material is formed on a surface of a metal substrate of an electric connector.Type: GrantFiled: November 29, 2010Date of Patent: December 10, 2013Assignee: C.C.P. Contact Probes Co., Ltd.Inventors: Chin-Wei Hung, Wen-Yuan Chiang, Wei-Chu Chen, Chih-Jung Wang, Wen-Ying Cheng, Bor-Chen Tsai, Wei-Chao Wang
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Publication number: 20130314646Abstract: The present invention relates to a fluorescent powder mixture, a manufacturing method for the same, and a corresponding liquid crystal display device. The fluorescent powder mixture is a mixture of a conductive powder and a fluorescent powder, wherein the conductive powder is aluminum zinc oxide, gallium zinc oxide, or indium tin oxide. The fluorescent powder mixture, the manufacturing method for the same, and the corresponding liquid crystal display device of the present invention increase the conductivity of the fluorescent powder, and further weaken the electron enrichment phenomenon on the surface of the fluorescent powder, so as to increase the illumination performance of the fluorescent powder.Type: ApplicationFiled: June 8, 2012Publication date: November 28, 2013Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD.Inventor: Yewen Wang
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Patent number: 8586240Abstract: Powder milling techniques, tin-based alloys formed thereby, and the use of such alloys as electrode compositions for lithium ion batteries are provided. The alloys include tin and at least one transition metal but contain no silicon. The powder milling is done using low energy roller milling (pebble milling).Type: GrantFiled: July 27, 2012Date of Patent: November 19, 2013Assignee: 3M Innovative Properties CompanyInventors: Jeffrey R. Dahn, Pierre P. Ferguson, Mark N. Obrovac, Dinh B. Le, James R. Landucci
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Patent number: 8580157Abstract: The sulfide has the following composition, and the photoelectric element uses the sulfide. (1) The sulfide contains Cu, Zn, and Sn as a principal component. (2) When x is a ratio of Cu/(Zn+Sn), y is a ratio of Zn/Sn (x and y being atomic ratios), and the composition of the sulfide is represented by the (x, y) coordinates, with the points A=(0.78, 1.32), B=(0.86, 1.32), C=(0.86, 1.28), D=(0.90, 1.23), E=(0.90, 1.18), and F=(0.78, 1.28), the composition (x, y) of the sulfide is on any one of respective straight lines connecting the points A?B?C?D?E?F?A in that order, or within an area enclosed by the respective straight lines.Type: GrantFiled: February 16, 2010Date of Patent: November 12, 2013Assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho, Institute of National Colleges of Technology, JapanInventors: Tatsuo Fukano, Tomoyoshi Motohiro, Hironori Katagiri
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Publication number: 20130289133Abstract: A method for producing particles containing a metal oxide is provided, and the method includes: feeding a metal oxide sol having a pH of 7 or higher and containing metal oxide colloidal particles as dispersoids and water as a dispersion medium, into a liquid containing a solvent having a solubility in 20° C. water of 0.05 g/100 ml or more and having a relative permittivity of 30 or lower (protic solvent) or of 40 or lower (aprotic solvent) at 20° C., and thereby forming aggregates of the metal oxide colloidal particles in the liquid; and subjecting the aggregates to a treatment such as drying and heating, and thereby converting the aggregates into particles that are insoluble in water. By appropriately selecting the solvent, particles can be obtained in the form of flakes, fibers, spheres, and the like.Type: ApplicationFiled: January 11, 2012Publication date: October 31, 2013Applicant: NIPPON SHEET GLASS COMPANY, LIMITEDInventors: Kazuhiro Doshita, Toshitaka Furuichi
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Patent number: 8563172Abstract: An anode composition for a lithium secondary battery includes an anode active material, a binder, and a conductive material. The active material includes a plurality of anode active material particles, each of which includes a core made of metal or metalloid allowing alloying or dealloying with lithium, or a compound containing the metal or metalloid; and a shell formed at an outer portion of the core and having Ketjen black. The conductive material includes carbon nano fiber. The anode composition uses a metal-based anode active material that may controls the volume expansion, and also uses conductive material with excellent dispersion so that the life characteristic of the battery may be improved.Type: GrantFiled: October 21, 2011Date of Patent: October 22, 2013Assignee: LG Chem, Ltd.Inventors: Yo-Han Kwon, Byung-Hun Oh
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Publication number: 20130264523Abstract: The present invention relates to conductive pigment granules which are distinguished by the fact that they are based on a support material, where the support material has been coated with one or more electrically conductive pigments by means of an adhesion promoter. The pigment granules according to the invention are preferably used in pale surface coatings which have been formed with electrically conductive properties.Type: ApplicationFiled: November 17, 2011Publication date: October 10, 2013Applicant: MERCK PATENT GMBHInventors: Thomas Rathschlag, Carsten Griessmann
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Patent number: 8551370Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation and subsequently compacting by charging the granule into a mold followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.Type: GrantFiled: September 13, 2012Date of Patent: October 8, 2013Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Yoshiyuki Abe, Tokuyuki Nakayama, Go Ohara, Riichiro Wake
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Patent number: 8551369Abstract: A wiring material contains copper, nitrogen, and a dopant which is more readily oxidized than copper in an Ellingham diagram, the dopant being added to the wiring material at a rate of not less than 0.5 at. % and not more than 10 at. %.Type: GrantFiled: September 30, 2011Date of Patent: October 8, 2013Assignee: FUJIFILM CorporationInventor: Takamichi Fujii
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Publication number: 20130256607Abstract: A tin oxide particle having a structure characterized by peaks in Raman spectroscopy at at least 37±9 cm?1, 57±9 cm?1, 97±9 cm?1, 142±9 cm?1, 205±9 cm?1, 255±9 cm?1. The tin oxide particle preferably has an infrared transmittance of 80% or less at a wavelength of 1500 nm. The tin oxide particle preferably exhibits electroconductivity. The tin oxide particle is preferably substantially free from a dopant element that develops electroconductivity.Type: ApplicationFiled: January 10, 2012Publication date: October 3, 2013Applicant: Mitsui Mining & Smelting Co., Ltd.Inventors: Kazuhiko Kato, Kenji Suzuoka, Yasunori Tabira, Isamu Yashima
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Publication number: 20130248781Abstract: The present invention relates to semiconducting pigments based on flake-form substrates which have a doped tin dioxide layer on the surface and to the use of the pigments in paints, coatings, printing inks, plastics, security applications, floorcoverings, films, formulations, ceramic materials, glasses, paper, for laser marking, in thermal protection, in dry preparations, in pigment preparations and in particular as varistor pigment.Type: ApplicationFiled: November 2, 2011Publication date: September 26, 2013Applicant: MERCK PATENT GmbHInventors: Reinhold Rueger, Matthias Kuntz
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Patent number: 8540903Abstract: Disclosed is an electrically conductive paste which enables to reduce the level of void growth in a conducting pathway formed in a joint part produced after curing the electrically conductive paste in the implementation of an electronic component on a circuit board by using the electrically conductive paste, and which contains a reduced amount of a viscosity-adjusting/thixotropy-imparting additive. Two Sn-containing low-melting-point alloy particles having different melting points and different average particle diameters are selected as electrically conductive filler components to be used in an electrically conductive paste, and the two alloy particles are mixed at a predetermined ratio for use.Type: GrantFiled: November 21, 2008Date of Patent: September 24, 2013Assignee: Panasonic CorporationInventors: Takayuki Higuchi, Hidenori Miyakawa, Atsushi Yamaguchi, Arata Kishi, Naomichi Ohashi
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Publication number: 20130244022Abstract: The present invention relates to dielectric coatings and articles having high, but precisely defined specific surface resistances.Type: ApplicationFiled: November 2, 2011Publication date: September 19, 2013Applicant: MERCK PATENT GMBHInventors: Reinhold Rueger, Matthias Kuntz
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Publication number: 20130244092Abstract: According to one embodiment, an electrode material for a battery includes a tungsten oxide powder or a tungsten oxide composite powder provided with a coating unit containing at least one selected from a metal oxide, silicon oxide, a metal nitride, and silicon nitride.Type: ApplicationFiled: March 11, 2013Publication date: September 19, 2013Applicants: Toshiba Materials Co., Ltd., Kabushiki Kaisha ToshibaInventors: Yoko TOKUNO, Tomomichi NAKA, Naoaki SAKURAI, Akito SASAKI, Shuzi HAYASE
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Publication number: 20130244109Abstract: The present technology is able to provide a solid electrolyte cell that uses a positive electrode active material which has a high ionic conductivity in an amorphous state, and a positive electrode active material which has a high ionic conductivity in an amorphous state. The solid electrolyte cell has a stacked body, in which, a positive electrode side current collector film, a positive electrode active material film, a solid electrolyte film, a negative electrode potential formation layer and a negative electrode side current collector film are stacked, in this order, on a substrate. The positive electrode active material film is made up with an amorphous-state lithium phosphate compound that contains Li; P; an element M1 selected from Ni, Co, Mn, Au, Ag, and Pd; and O, for example.Type: ApplicationFiled: December 2, 2011Publication date: September 19, 2013Applicant: Sony CorporationInventors: Yuichi Sabi, Susumu Sato, Saori Tsuda
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Patent number: 8529797Abstract: Perovskite semiconductor thin films and the method of making Perovskite semiconductor thin films are disclosed. Perovskite semiconductor thin films were deposited on inexpensive substrates such as glass and ceramics. CsSnI3 films contained polycrystalline domains with typical size of 300 nm and larger. It is confirmed experimentally that CsSnI3 compound in its black phase is a direct band-gap semiconductor, consistent with the calculated band structure from the first principles.Type: GrantFiled: June 1, 2011Date of Patent: September 10, 2013Inventor: Kai Shum
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Patent number: 8524122Abstract: A production method capable of producing ITO particles without using a solvent with a high boiling point as a solvent used in the producing step by a simple treatment method without through a heating process in an atmosphere which disadvantageously causes sintering among the ITO particles to coarsen the ITO particles. An ITO powder suitable for a coating material for a transparent electroconductive material, being produced by a first step of dissolving salt containing indium and salt containing tin into an organic solvent, then adding to this organic solvent, an organic solvent containing a basic precipitant, to thereby manufacture a mixture of a precursor containing indium and tin, and the organic solvent; and a second step of applying heat treatment to the mixture of the precursor containing indium and tin, and the organic solvent in a pressurizing vessel at 200° C. or more and 300° C. or less, to generate ITO particles.Type: GrantFiled: June 30, 2009Date of Patent: September 3, 2013Assignees: Tohoku University, Dowa Electronics Materials Co., Ltd.Inventors: Atsushi Muramatsu, Kiyoshi Kanie, Kazuhisa Saito, Koji Tanoue, Akira Nagatomi
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Patent number: 8524123Abstract: A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).Type: GrantFiled: August 30, 2006Date of Patent: September 3, 2013Assignee: Idemitsu Kosan Co., Ltd.Inventors: Koki Yano, Kazuyoshi Inoue, Akira Kaijo, Satoshi Umeno, Tokie Tanaka
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Patent number: 8512602Abstract: ITO particles are provided, which are small in variations of particle diameters and used for an ITO coating material capable of forming a transparent conductive film having high transparency and low haze value. Also, ITO coating material is provided, containing such ITO particles, and a transparent conductive film containing such ITO particles. Further, ITO powders are provided, wherein 90% or more of ITO particles constituting the ITO powders have a primary particle diameter of 20 nm or less.Type: GrantFiled: September 26, 2008Date of Patent: August 20, 2013Assignee: Dowa Electronics Materials Co., Ltd.Inventors: Akira Nagatomi, Koji Tanoue
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Patent number: 8506850Abstract: The present invention provides a conductive fine particle capable of suppressing a blackening phenomenon during storage and thus providing high connection reliability; an anisotropic conductive material containing the conductive fine particle; and a connection structure. The conductive particle which has a base fine particle, and a conductive layer and a low-melting point metal layer that are formed in the stated order on the surface of the base fine particle, wherein the low-melting point metal layer has an arithmetic mean surface roughness of 50 nm or lower.Type: GrantFiled: March 17, 2010Date of Patent: August 13, 2013Assignee: Sekisui Chemical Co., Ltd.Inventors: Taku Sasaki, Hiroshi Natsui
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Patent number: 8507135Abstract: Nanocomposites of conductive, nanoparticulate polymer and electronically active material, in particular PEDOT and LiFePO4, were found to be significantly better compared to bare and carbon coated LiFePO4 in carbon black and graphite filled non conducting binder. The conductive polymer containing composite outperformed the other two samples. The performance of PEDOT composite was especially better in the high current regime with capacity retention of 82% after 200 cycles. Further improvement can be obtained if the porosity of the nanocomposites is enhanced. Hence an electrode produced from a composite made of conductive, nanoparticulate polymer, electronically active material, and sacrificial polymer, wherein the sacrificial polymer has been removed leaving pores has improved electrolyte and ion diffusion properties allowing the production of thicker electrodes.Type: GrantFiled: March 11, 2010Date of Patent: August 13, 2013Assignee: The Swatch Group Research and Development LtdInventor: Nathalie Brebner-Grupp
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Publication number: 20130202850Abstract: A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a ?-Ga2O3-type structure, or GaInO3 phase and a (Ga,In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 ?m, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.Type: ApplicationFiled: March 15, 2013Publication date: August 8, 2013Applicant: SUMITOMO METAL MINING CO., LTD.Inventor: SUMITOMO METAL MINING CO., LTD.
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Patent number: 8496873Abstract: The invention relates to Sn—Cu—Ag alloy nanoparticles, preparation method thereof and ink or paste using the alloy nanoparticles in which the alloy nanoparticles are suitable for metal ink having excellent electrical conductivity or solder materials having low calcinating temperature.Type: GrantFiled: June 13, 2012Date of Patent: July 30, 2013Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kwi-Jong Lee, Hyuck-Mo Lee, Hyun-Joon Song, Yun-Hwan Jo, Ji-Chan Park, Jung-Up Bang, Dong-Hoon Kim
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Publication number: 20130187104Abstract: This indium tin oxide powder has a median diameter of 30 nm to 45 nm and a D90 value of 60 nm or less in a particle size distribution. This method for producing an indium tin oxide powder includes, in series: a step (A) of coprecipitating an indium tin hydroxide by using a tin (Sn2+) compound under conditions where a pH is in a range of 4.0 to 9.3 and a liquid temperature is in a range of 5° C. or higher, wherein the indium tin hydroxide has a color tone ranging from bright yellow to color of persimmon in a dried powder state; a step (B) of drying and calcining the indium tin hydroxide, and thereby, obtaining indium tin oxide; and a step (C) of dry pulverizing the obtained indium tin oxide in a nitrogen atmosphere.Type: ApplicationFiled: October 24, 2011Publication date: July 25, 2013Applicants: Mitsubishi Materials Electronic Chemicals Co., Ltd., MITSUBISHI MATERIALS CORPORATIONInventors: Shinya Shiraishi, Hirotoshi Umeda, Ai Takenoshita
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Patent number: 8491822Abstract: A tin oxide particle having at least two diffraction peaks at 2? (deg) of 9±1° and 28±1° in XRD measurement by Cu/K? radiation. The tin oxide particle preferably shows diffraction peaks at 2? (deg) of 19±1°, 48±1°, and 59±1°. The tin oxide particle preferably has electroconductivity. The tin oxide particle is preferably produced by mixing an aqueous solution containing tin (II) and a hydroxyl-containing organic compound in a heated condition with an alkali.Type: GrantFiled: July 20, 2010Date of Patent: July 23, 2013Assignee: Mitsui Mining & Smelting Co., Ltd.Inventors: Kazuhiko Kato, Akihiro Modeki, Kenji Suzuoka, Yasunori Tabira, Isamu Yashima
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Publication number: 20130181175Abstract: The present invention discloses a low-temperature co-precipitation method for fabricating TCO powders, which comprises steps: respectively dissolving two or more metals/metal salts in solvents to obtain metal ion solutions; mixing the metal ion solutions to form a precursor solution having a specified composition; enabling a co-precipitation reaction at a temperature lower than 45° C. via adding precipitant in two stages, controlling the temperature of precipitation reactions and undertaking aging processes; flushing, filtering, drying and calcining the precipitates to obtain TCO powders having a specified composition and improved quality.Type: ApplicationFiled: January 16, 2012Publication date: July 18, 2013Inventors: Hsin-Chun LU, Chen-Sung Chang, Chun-Lung Chu, Min-Hsiang Liao, Ming-Hung Liu, Mei-Ching Chiang
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Patent number: 8466077Abstract: A sputtering target for forming a ZrO2—In2O3 based protective film for an optical storage medium, has a component composition made of ZraInbAcO100-a-b-c where “A” represents one, two, or more of Si, Cr, Al, Ce, Ti, and Sn, “a” represents an amount greater than 5 atomic percent and less than 23 atomic percent, “b” represents an amount greater than 12 atomic percent and less than 35 atomic percent, and “c” represents an amount greater than 0 and less than 30 atomic percent, wherein 90% or more of Zr that is included in the sputtering target for forming the protective film for the optical storage medium is in an oxidative product phase in which Zr and In are combined, and is dispersed in a base material of the target.Type: GrantFiled: September 5, 2008Date of Patent: June 18, 2013Assignee: Mitsubishi Material CorporationInventors: Shoubin Zhang, Akifumi Mishima
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Publication number: 20130149615Abstract: An iron electrode and a method of manufacturing an iron electrode for use in an iron-based rechargeable battery are disclosed. In one embodiment, the iron electrode includes carbonyl iron powder and one of a metal sulfide additive or metal oxide additive selected from the group of metals consisting of bismuth, lead, mercury, indium, gallium, and tin for suppressing hydrogen evolution at the iron electrode during charging of the iron-based rechargeable battery. An iron-air rechargeable battery including an iron electrode comprising carbonyl iron is also disclosed, as is an iron-air battery wherein at least one of the iron electrode and the electrolyte includes an organosulfur additive.Type: ApplicationFiled: June 15, 2012Publication date: June 13, 2013Applicant: UNIVERSITY OF SOUTHERN CALIFORNIAInventors: Sri R. Narayan, G.K. Surya Prakash, Robert Aniszfeld, Aswin Manohar, Souradip Malkhandi, Bo Yang
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Publication number: 20130149485Abstract: This invention relates to a support substrate that is to be attached to a substrate to be supported to thereby support the substrate to be supported, including: a support substrate main body having an attachment surface that is to be attached to the substrate to be supported; and a conductive film mainly including a fluorine-doped tin oxide, which has been formed on at least a surface opposite to the attachment surface among surfaces of the support substrate main body.Type: ApplicationFiled: February 6, 2013Publication date: June 13, 2013Applicant: ASAHI GLASS COMPANY, LIMITEDInventor: ASAHI GLASS COMPANY, LIMITED
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Patent number: 8454861Abstract: The present invention relates to optically variable pigments of high electrical conductivity which comprise a flake-form substrate, which essentially consists of silicon dioxide and/or silicon oxide hydrate, and an electrically conductive layer surrounding the substrate, to a process for the preparation thereof, and to the use of pigments of this type.Type: GrantFiled: December 11, 2008Date of Patent: June 4, 2013Assignee: Merck Patent GmbHInventors: Burkhard Krietsch, Matthias Kuntz, Reinhold Rueger
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Patent number: 8440115Abstract: A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GalnO3 phase of a ?-Ga2O3-type structure, or GalnO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 ?m, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.Type: GrantFiled: July 2, 2008Date of Patent: May 14, 2013Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Tokuyuki Nakayama, Yoshiyuki Abe
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Publication number: 20130115515Abstract: Provided herein is an electrode active material comprising a lithium metal oxide and an overcharge protection additive having an operating voltage higher than the operating voltage of the lithium metal oxide.Type: ApplicationFiled: October 30, 2012Publication date: May 9, 2013Applicant: JOHNSON CONTROLS TECHNOLOGY LLCInventor: JOHNSON CONTROLS TECHNOLOGY LLC
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Patent number: 8431049Abstract: In one embodiment a tin oxide based electrode is disclosed. The tin oxide-based electrode includes a base material of tin oxide, a resistivity modifier, a sintering aid, and a corrosion inhibitor. The corrosion inhibitor forms a solid solution with the base material and has a melting point not less than about 1700° C. and a partial pressure of not greater than about 1.0E-7 atmospheres at 1500° C. The corrosion inhibitor further includes 0-4.0 wt % ZrO2 based on the total weight of the composition.Type: GrantFiled: May 19, 2005Date of Patent: April 30, 2013Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Olivier Citti, Charles N. McGarry, Yves Boussant-Roux
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Publication number: 20130089707Abstract: Provided are construction material granules. In one embodiment, the granules include a core enclosed by a layer comprising a conductive material and a layer comprising a dielectric material. Also provided are related methods of constructing such materials.Type: ApplicationFiled: October 10, 2011Publication date: April 11, 2013Applicant: Certainteed CorporationInventor: Regine Faure
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Publication number: 20130082219Abstract: A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.Type: ApplicationFiled: September 30, 2011Publication date: April 4, 2013Inventors: Jeffrey W. Elam, Anil U. Mane
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Publication number: 20130078459Abstract: A conductive adhesive mixture includes a component A which is 0.1% to 28% of the dry weight of the conductive adhesive mixture and a component B which is 72% to 99.9% of the dry weight of the conductive adhesive mixture. The component A is selected from one or more of the group consisting of SnCl4, InCl3 and SbCl3; and the component B is selected from one or more of the group consisting of K2O.nSiO2, Na2O.nSiO2, (SiO2)n and Al2O3. The conductive adhesive mixture, having good electrical conductivity, is used for preparation of the fluorescent screen anode plate, greatly improving the life of the luminous layer, thus improving the life and light efficiency of the field emission device. The present invention further provides a fluorescent screen anode plate manufactured with this conductive adhesive mixture and the manufacturing method thereof.Type: ApplicationFiled: June 9, 2010Publication date: March 28, 2013Applicant: Ocean's King Lighting Science & Technology Co., Ltd.Inventors: Mingjie Zhou, Wenbo Ma, Qingtao Li, Pengrui Shao
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Publication number: 20130048924Abstract: The described invention provides compositions related to an electronically insulating amorphous or nanocrystalline mixed ionic conductor composition comprising a metal fluoride composite to which an electrical potential is applied to form 1) a negative electrode, and 2) a positive electrode, wherein the negative electrode and positive electrode are formed in situ.Type: ApplicationFiled: November 9, 2010Publication date: February 28, 2013Inventors: Glenn G. Amatucci, Anna Halajko, Fadwa Badway
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Patent number: 8383019Abstract: A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.Type: GrantFiled: September 14, 2006Date of Patent: February 26, 2013Assignee: Idemitsu Kosan Co., Ltd.Inventors: Koki Yano, Kazuyoshi Inoue, Tokie Tanaka
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Patent number: 8383018Abstract: Provided is a method of forming a nanocomposite solution, and a nanocomposite photovoltaic device. In the method, a metal oxide nanorod solution is prepared and a nanoparticle solution is prepared. The metal oxide nanorod solution and the nanoparticle solution are mixed to form a nanocomposite solution.Type: GrantFiled: August 20, 2010Date of Patent: February 26, 2013Assignee: Electronics and Telecommunications Research InstituteInventor: Jonghyurk Park
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Patent number: 8372314Abstract: Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm2O3 and Yb2O3, wherein an amount of the oxide is about 0.5 wt. % to about 10 wt. % based on the weight of the target.Type: GrantFiled: November 24, 2010Date of Patent: February 12, 2013Inventors: Bon kyung Koo, Han Ho Yoon, Ju Ok Park, Hyung Ryul Park, Hyun Su Kim, Sung Ryong Choi, Joong Ryeol Choi, Pung Keun Song, Joon-Hong Park
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Patent number: 8366975Abstract: This invention relates to processes for making kesterite compositions with atypical Cu:Zn:Sn:S ratios and/or kesterite compositions with unusually small coherent domain sizes. This invention also relates to these kesterite compositions and their use in preparing CZTS films.Type: GrantFiled: May 21, 2010Date of Patent: February 5, 2013Assignee: E I du Pont de Nemours and CompanyInventors: Lynda Kaye Johnson, H. David Rosenfeld, Daniela Rodica Radu
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Patent number: 8349220Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation, and subsequently compacting by charging the granule into a mold, followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.Type: GrantFiled: May 19, 2011Date of Patent: January 8, 2013Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Yoshiyuki Abe, Tokuyuki Nakayama, Go Ohara, Riichiro Wake
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Publication number: 20120319057Abstract: An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 m?cm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.Type: ApplicationFiled: August 23, 2012Publication date: December 20, 2012Applicant: JX NIPPON MINING & METALS CORPORATIONInventors: Masakatsu Ikisawa, Masataka Yahagi, Kozo Osada, Takashi Kakeno
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Publication number: 20120313055Abstract: By using a coating method, which is a simple method of manufacturing a transparent conductive film at low cost, a transparent conductive film formed with heating at a low temperature, in particular, lower than 300° C. with both of excellent transparency and conductivity and also with excellent film strength and a method of manufacturing this transparent conductive film are provided.Type: ApplicationFiled: February 15, 2011Publication date: December 13, 2012Applicant: SUMITOMO METAL MINING CO.LTD.Inventors: Masaya Yukinobu, Takahito Nagano, Yoshihiro Otsuka
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Publication number: 20120313057Abstract: An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10?In/(In+Ga+Sn)?0.60??(1) 0.10?Ga/(In+Ga+Sn)?0.55??(2) 0.0001<Sn/(In+Ga+Sn)?0.60??(3).Type: ApplicationFiled: February 22, 2011Publication date: December 13, 2012Inventors: Masayuki Itose, Mami Nishimura, Masashi Kasami, Koki Yano
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Publication number: 20120295160Abstract: The present disclosure is directed at clathrate (Type I) allotropes of silicon, germanium and tin. In method form, the present disclosure is directed at methods for forming clathrate allotropes of silicon, germanium or tin which methods lead to the formation of empty cage structures suitable for use as electrodes in rechargeable type batteries.Type: ApplicationFiled: May 17, 2011Publication date: November 22, 2012Applicant: SOUTHWEST RESEARCH INSTITUTEInventors: Michael A. MILLER, Kwai S. CHAN, Wuwei LIANG, Candace K. CHAN
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Publication number: 20120295163Abstract: An electric storage device is provided with a positive electrode having a positive-electrode mixture layer including a positive-electrode active material. The positive-electrode active material includes a lithium-vanadium-phosphate from 8% to 70% by mass and a lithium-nickel complex oxide from 20% to 82% by mass. A coating concentration of the positive-electrode mixture layer is from 4 mg/cm2 to 20 mg/cm2. The lithium-nickel complex oxide includes a nickel element from 0.3 mol to 0.8 mol with respect to a lithium element of 1 mol.Type: ApplicationFiled: May 18, 2012Publication date: November 22, 2012Applicants: NIPPON CHEMICAL INDUSTRIAL CO.,LTD., FUJI JUKOGYO KABUSHIKI KAISHAInventors: Hideo Yanagita, Kazuki Takimoto, Takahito Sakuraba, Ken Baba, Yasuyuki Kiya, Tsutomu Kikuchi
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Publication number: 20120280188Abstract: An embodiment of the disclosed technology discloses a transparent conductive thin film and a method of manufacturing the same. The embodiment of the disclosed technology employs tin (II) oxalate (Sn2C2O4) as a raw material, acetic acid and ammonia as complex agents to form a neutral complex system with a pH=6.5˜7.5, and trifluoroacetic acid as dopant to form a stable doping of F ions, and has a high doping efficiency.Type: ApplicationFiled: May 4, 2012Publication date: November 8, 2012Applicants: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventor: Tongjun LIU
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Patent number: 8304359Abstract: A sputtering target which is composed of a sintered body of an oxide containing indium, tin and zinc as main components; the atomic ratio of In/(In+Sn+Zn) being 0.10 to 0.35; the atomic ratio of Sn/(In+Sn+Zn) being 0.15 to 0.35; and the atomic ratio of Zn/(In+Sn+Zn) being 0.50 to 0.70; and containing a hexagonal layered compound shown by In2O3(ZnO)m, wherein m is an integer of 3 to 9, and a spinel structure compound shown by Zn2SnO4.Type: GrantFiled: September 25, 2006Date of Patent: November 6, 2012Assignee: Idemitsu Kosan Co., Ltd.Inventors: Koki Yano, Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka, legal representative, Yukio Shimane