Abstract: The invention relates to compositions and composite particles that may be employed as anode materials for Solid Oxide Fuel Cells (SOFCs). The invention particularly relates to novel metallic SOFC anode materials, which preferably comprise metallic nickel (Ni), copper (Cu), especially if the Ni/Cu oxide has been stabilized with yttrium (Y) oxide (e.g., Y2O3) and/or zirconium (Zr) oxide (e.g., ZrO2) composition(s) (“YSZ”). Such compositions may additionally comprise a cerium (Ce) oxide (such as CeO2) (e.g., Ni/YSZ/CeO2). The invention particularly concerns such compositions and particles produced through the use of direct deposition or Flame Spray Pyrolysis so as to provide a controlled morphology and chemical composition.

Abstract: The present invention relates to optically variable pigments of high electrical conductivity which comprise a flake-form substrate, which essentially consists of silicon dioxide and/or silicon oxide hydrate, and an electrically conductive layer surrounding the substrate, to a process for the preparation thereof, and to the use of pigments of this type.

Abstract: Nanoparticles comprising tungsten, methods of manufacturing nanoparticles comprising tungsten, and applications of nanoparticles comprising tungsten, such as electronics, optical devices, photonics, reagents for fine chemical synthesis, pigments, and catalysts are provided.

Abstract: A composite material of complex alloy is provided and it is the Ceramic-Metal Composite based on a thermoelectric material filled with ceramic material. The composite material is represented by the following general formula (I). A1?xBx ??(I) In the general formula (I), 0.05?X?0.2; A represents a Half-Heusler thermoelectric material and its proportional composition is represented with the following formula (II). (Tia1Zrb1Hfc1)1?y?zNiy Snz ??(II) In the general formula (II), 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 0.25?y?0.35, and 0.25?z?0.35; B represents at least one element selected from a group of C, O, and N.

Abstract: A substrate of an electrostatic chuck, which is a member for use in a semiconductor manufacturing apparatus, is formed of an yttrium oxide material that contains yttrium oxide (Y2O3), silicon carbide (SiC), and a compound that contains a rare-earth element (RE), Si, O, and N. The yttrium oxide material contains RE8Si4N4O14 as a compound that contains a rare-earth element (RE), Si, O, and N, wherein RE may be La or Y. Y8Si4N4O14 is produced during a sintering step of a raw material that contains the main component Y2O3 and an accessory component Si3N4. Y8Si4N4O14 and SiC in the yttrium oxide material improve mechanical strength and volume resistivity.

Abstract: The present invention provides a conductive composition and a conductive paste from which a conductive film having a high conductivity and a low thermal expansion coefficient can be formed. The thermal expansion coefficient of an island fixing type conductive layer 10 is compatible with that of a substrate 12. A cracking of the island fixing type conductive layer 10 or a crack in the substrate 12 due to a difference between these thermal expansion coefficients is suitably inhibited. The thermal expansion coefficient of the island fixing type conductive layer 10 is adjusted by ZWP contained in the range from 10 to 55 (wt %) as a low-expansion filler. Thus, compared with the case where other low-expansion filler is added, the conductivity degradation is inhibited. Accordingly, the island fixing type conductive layer 10 having a high conductivity and a high bonding strength is obtained.

Abstract: Mixed oxide powder consisting of particles with the components zirconium dioxide, aluminium oxide and at least a third component selected from the group including yttrium oxide, magnesium oxide or calcium oxide, wherein mixed oxide powder has an aluminium oxide content 0.01 to 10 wt. % and is homogeneously distributed in the mixed oxide particles, the content of aluminium oxide, zirconium dioxide and yttrium oxide is at least 99.5 wt. %, based on the total quantity of the powder, and the BET surface area is 20 to 80 m2/g. It is obtained by atomising a solution containing at least one starting compound for each of aluminium oxide, zirconium dioxide and the third component, allowing the atomised solution to react with oxygen in a reaction chamber at a reaction temperature 700 to 15000° C., cooling the hot gases and the solid products and then separating the solid product from the gases. It can be used as a dental material.

Abstract: Method for manufacturing a high-energy, low-voltage ignition plug comprising a ceramic material between its electrodes: there is mixed, in a container containing a liquid, from 50 to 75% of a compound which is intended to form a conductive phase and from 25 to 50% of one or more materials which allow the formation of phases of yttrium garnet after thermal processing; operations are carried out for pulverizing, drying and sieving the admixture; the admixture is pressed or injected into a mould; sintering is carried out so as to obtain a ceramic material having porosity of between 0 and 30%; the ceramic material is used in order to constitute the material located between the electrodes of a high-energy, low-voltage ignition plug. Ignition plug manufactured in that manner.

Abstract: Disclosed herein are a metal oxide paste composition comprising a carboxylic ester dispersant and/or a phosphate dispersant, and a method for manufacturing a semiconductor electrode for solar cells using the same. The disclosed metal oxide paste composition improves the dispersibility of metal oxide nanoparticles. Thus, if it is used to manufacture a semiconductor electrode for solar cells, it will allow the increased adsorption of a dye, thus improving the photoelectric efficiency of the resulting solar cell.

Abstract: A method of forming an array of nanorods on a crystalline substrate includes heating a composition that includes the crystalline substrate, a nanorod precursor, and a surfactant. The surfactant is capable of associating with the surface of the nanorods. The resulting nanostructures formed from the methods may be used in a variety of devices, including dye-sensitizing solar cell devices.

Abstract: Provided is a dispersant including a hydrophobic moiety with a branched alkyl group and an arylene group and a hydrophilic moiety with an alkylene oxide group and a carboxylic acid group. The alkyl group is a substituted or unsubstituted alkyl group of 5-30 carbon atoms, the arylene group is a substituted or unsubstituted arylene group of 6-30 carbon atoms, and the alkylene oxide group is a substituted or unsubstituted alkylene oxide group of 2-10 carbon atoms. The dispersant has good dispersibility, and a low residual carbon content after sintering. Thus, a paste composition including the dispersant can maintain a low viscosity and disperse many inorganic particles. Thus, an inorganic device prepared using the paste composition can have a low residual carbon content and a high packing density.

Abstract: A thermistor element includes a thermistor body and a reduction-resistant coating covering the thermistor body. The thermistor body contains a perovskite phase of perovskite-type crystal structure represented by the composition formula: ABO3 where A is at least one A-site element and B is at least one B-site element. The reduction-resistant coating is formed of a complex oxide containing one or more of the at least one A-site element and one or more of the at least one B-site element.

Abstract: Provided is a metal phosphate showing high proton conductivity, which is useful for a fuel cell having higher output and produced at lower cost. The proton-conductive metal phosphate is a compound containing M, P and O, wherein M represents at least one selected from the group consisting of group 4A and group 4B elements in the long form of the periodic table, a part of M is substituted with a dopant element J J represents at least one selected from the group consisting of group 3A, group 3B, group 5A and group 5B elements in the long form of the periodic table and at least contains an element selected from B, Al, Ga, Sc, Yb, Y, La, Ce, Sb, Bi, V, Ta and Nb.

Abstract: An electrolyte composition containing an ionic liquid and conductive particles, an electrolyte composition containing an ionic liquid and oxide semiconductor particles and optionally containing conductive particles, and an electrolyte composition containing an ionic liquid and insulating particles are provided. Furthermore, a photoelectric conversion element comprising: a working electrode, the working electrode comprising an electrode substrate and an oxide semiconductor porous film formed on the electrode substrate and sensitized with a dye; a counter electrode disposed opposing the working electrode; and an electrolyte layer made of these electrolyte compositions is provided.

Abstract: Disclosed is a novel strontium-lanthanum-tungsten-containing metal composite oxide. An ionic conductor comprising the metal composite oxide and an electrochemical device comprising the ionic conductor are also disclosed. The metal composite oxide has an improved ionic conductivity, because formation of an open space within a lattice is ensured by the defects of metal ion sites in the lattice. Therefore, the metal composite oxide is useful for an ionic conductor or an electrochemical device requiring ionic conductivity.

Abstract: Described is a composite lithium compound having a mixed crystalline structure. Such compound was formed by heating a lithium compound and a metal compound together. The resulting mixed metal crystal exhibits superior electrical property and is a better cathode material for lithium secondary batteries.

Abstract: An oxide sintered body is composed mainly of indium and containing tungsten, has a resistivity of no more than 1 k?cm. The tungsten content in terms of the W/In atomic ratio is preferably at least 0.001 and no more than 0.17. The oxide sintered body comprise mainly a bixbyite structure indium oxide crystal phase containing tungsten in a solid solution and/or an indium tungstate compound crystal phase, with no tungsten oxide crystal phase present, whereby an oxide sintered body for use as a sputtering target is provided, for an oxide based transparent conductive film with low resistance and excellent transmission characteristics for the infrared light region.

Abstract: Disclosed is a novel strontium-lanthanum-yttrium-containing metal composite oxide. An ionic conductor comprising the metal composite oxide and an electrochemical device comprising the ionic conductor are also disclosed. The metal composite oxide has an improved ionic conductivity, because formation of an open space within a lattice is ensured by the defects of metal ion sites in the lattice. Therefore, the metal composite oxide is useful for an ionic conductor or an electrochemical device requiring ionic conductivity.

Abstract: Disclosed herein is a carboxylic ester dispersant shown in the following Formula 1 and a sulfide phosphor paste composition containing the dispersant. The dispersant improves the dispersibility of the sulfide phosphor paste composition and prevents oxidation by a solvent, thus improving processability and the luminescent properties of a phosphor film made from the paste and of a display produced using the film. In Formula 1, n is 1-20.

Abstract: A sintered body for thermistor element of the invention is a sintered body for thermistor element containing Sr, Y, Mn, Al, Fe, and O, wherein not only respective liquid crystal phases of a perovskite type oxide and a garnet type oxide are contained, but also a liquid crystal phase of at least one of an Sr—Al based oxide and an Sr—Fe based oxide. FeYO3 and/or AlYO3 is selected as the foregoing perovskite type oxide, and at least one member selected from Y3Al5O12, Al2Fe3Y3O12, and Al3Fe2Y3O12 is selected as the foregoing garnet type oxide, respectively by the powder X-ray diffraction analysis.

Abstract: An yttrium based phosphor, a process for preparing the yttrium based phosphor, and a display device using the yttrium based phosphor, the yttrium based phosphor including a conducting material such as WO3 or SnO2, and exhibiting an enhanced luminance characteristic under low voltage, and high current density conditions.

Abstract: To provide an electrically conductive material excellent in electrical conductivity and capable of exhibiting p-type electrical conductivity. An electrically conductive material containing Sn, W and oxygen, characterized in that when its chemical composition is expressed as Sn(x)W(y)O(z), x, y and z satisfy the following formulae (1) to (4): 0.7<x<1.3??(1) 0.7<y<1.3??(2) 3.2<z<4.5??(3) 0.001?(x?y)?0.1 or 0.001?(y?x)?0.1.

Abstract: Disclosed is metal composite oxides having the new crystal structure. Also disclosed are ionic conductors including the metal composite oxides and electrochemical devices comprising the ionic conductors. The metal composite oxides have an ion channel formed for easy movement of ions due to crystallographic specificity resulting from the ordering of metal ion sites and metal ion defects within the unit cell. Therefore, the metal composite oxides according to the present invention are useful in an electrochemical device requiring an ionic conductor or ionic conductivity.

Abstract: The photocatalyst based on a composite WO3—SiC/TiO2 semiconductor and subjected to radiation whose wavelength is at least partly less than 400 nm gives1 photocatalytic oxidation of volatile organic compounds and leads to their total mineralisation into CO2 and H2O. The process for the photocatalytic purification of industrial, agricultural or domestic gaseous effluent may be conducted at room pressure and temperature. Its conversion rate is high and stable.

Abstract: A novel phosphor material which can be manufactured without utilizing a fault formation process which is difficult to be controlled. The phosphor material has a eutectic structure formed of a base material that is a semiconductor formed of a Group 2 element and a Group 6 element, a semiconductor formed of a Group 3 element and a Group 5 element, or a ternary phosphor formed of an alkaline earth metal, a Group 3 element, and a Group 6 element, and a solid solution material including a transition metal. The phosphor material is suited for an EL element because of less variation of characteristic since defect formation process in which stress is applied externally to form a defect inside of a phosphor material is not needed.

Abstract: A plasma display panel includes a bus electrode that is fabricated using a bus electrode forming composition that includes a black pigment, a conductive material, an organic binder, a photopolymerization initiator, and a cross-linking agent. The black pigment is present in an amount of 25 to 50 parts by weight based on 100 parts by weight of a conductive material.

Abstract: An electrochromic material having improved durability and more pleasing color characteristics is composed of a single-phase compound of formula W1?xTaxO3?x/2, x having a value in a range of from about 0.15 to about 0.5. Thin films of the electrochromic material can be manufactured by pulse laser deposition (PLD). Thin films of the electrochromic material are useful in the fabrication of electrochromic devices, such as “smart” windows, mirrors, information displays and variable emittance surfaces.

Abstract: A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio of 0.001 to 0.190.

Abstract: A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio of 0.001 to 0.190.

Abstract: Aqueous coating slurries useful in depositing a dense coating of a ceramic electrolyte material (e.g., yttrium-stabilized zirconia) onto a porous substrate of a ceramic electrode material (e.g., lanthanum strontium manganite or nickel/zirconia) and processes for preparing an aqueous suspension of a ceramic electrolyte material and an aqueous spray coating slurry including a ceramic electrolyte material. The invention also includes processes for depositing an aqueous spray coating slurry including a ceramic electrolyte material onto pre-sintered, partially sintered, and unsintered ceramic substrates and products made by this process.

Abstract: A multi-phase mixed protonic/electronic conducting material comprising a proton-conducting ceramic phase and an electron conductive ceramic phase. Under the presence of a partial pressure gradient of hydrogen across the membrane, a membrane fabricated with this material selectively transports hydrogen ions through the protonically conductive ceramic phase and electrons through the electronically conducting ceramic phase, which results in ultrahigh purity hydrogen permeation through the membrane. The material has a high electronic conductivity and hydrogen gas transport is rate-limited by the protonic conductivity of the material.

Abstract: Method for preparing a semi-conductive ceramic material, wherein: in a receptacle containing a liquid, there are mixed from 30 to 90% of a conductive phase based on Z1-xMxCrO3 for 0?×?0.3, with Z being an element of the lanthanide group or a mixture of elements of this type, and M being calcium, strontium, magnesium, aluminum, titanium, yttrium or a mixture of two or more of these elements; from 8 to 60% of an insulating phase based on fine grains of alumina or tabular alumina or mullite or a mixture of two or more of these compounds; and from 0 to 10% of sintering additives; operations are carried out for milling, drying and sieving this mixture; this mixture is pressed; and this mixture is sintered in order to obtain a ceramic material having a porosity less than or equal to 25%.

Abstract: There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 ?m so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 ?m; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C.

Abstract: The thermistor portion of a thermistor device consists of a mixed sintered body of aY(Cr0.5Mn0.5)O3.bAl2O3 made of the perovskite-type compound Y(Cr0.5Mn0.5)O3 and Al2O3, or a mixed sintered body of aY(Cr0.5Mn0.5)O3.b(Al2O3+Y2O3) made of Y(Cr0.5Mn0.5)O3, Al2O3 and Y2O3. The mole fractions a and b have the relationships 0.05?a<1.0, 0<b?0.95 and a+b=1. This is required to obtain a thermistor device that has stable characteristics and exhibits a small change in its resistance value, even in a heat history from room temperature to 1000° C. or the like, and also has a resistance value of 50? to 100 k? in the temperature range from room temperature to 1000° C. The precursor compounds triethoxy yttrium, diethoxy manganese and tris (2,4-pentadiono) chromium are mixed in a mixed solvent of ethanol and isopropyl alcohol, and refluxing is performed to obtain a composite metal alkoxide solution.

Abstract: A highly accurate reduction resistant thermistor exhibiting stable resistance characteristics even under conditions where the inside of a metal case of a temperature sensor becomes a reducing atmosphere, wherein when producing the thermistor comprised of a mixed sintered body (M1 M2)O3.AOx, the mean particle size of the thermistor material containing the metal oxide, obtained by heat treating, mixing, and pulverizing the starting materials, is made smaller than 1.0 ?m and the sintered particle size of the mixed sintered body, obtained by shaping and firing this thermistor material, is made 3 ?m to 20 ?m so as to reduce the grain boundaries where migration of oxygen occurs, suppress migration of oxygen, and improve the reduction resistance.

Abstract: Materials, both glass and glass-ceramic, that exhibit UV-induced changes in light transmission and electrical conductivity behavior. The materials consist essentially, in mole %, of 20-40% SiO2, 10-20% AlO1.5, 35-55% SiO2+AlO1.5, at least 30% CdF2, 0-20% PbF2, and/or ZnF2, 0-15% rare earth metal fluoride, and 45-65% total metal fluorides.

Abstract: The thermistor element of the present invention is composed of a mixed sintered body aM1M2O3bY2O3 of a composition M1M2O3 (wherein M1 is Y, and M2 is at least one element selected from the elements such as Cr, Mn, Ti, etc.) as a perovskite compound and Y2O3, wherein molar fractions a and b satisfy the relations 0.05≦a<1.0, 0<b≦0.95 and a+b=1. Another wide-range type thermistor element of the present invention is composed of a perovskite compound M1 (M2M3)O3, wherein M1 is at least one element selected from the elements of the groups II and IIIA excluding La in the Periodic Table, and each of M2 and M3 is at least one element selected from the elements of the groups IIB, IIIB, IVA, VA, VIA, VIIA and VIII. a and b satisfy the relations a+b=1 and 0<b<0.1, where a is a molar fraction of M2 and b is a molar fraction of M3 in M1(M2M3)O3.

Abstract: A tungsten-precursor composite having a polymer matrix and a tungsten precursor therein. The tungsten precursor may be tungsten oxide, ammonium paratungstate, ammonium metatungstate or other precursor or combination of tungsten precursors. The polymer may be any of a very wide range of materials or combinations thereof. Binder, secondary fillers or other third components may be added. By means of use of various tungsten precursors, polymers, and third components, the physical, radiological and electrical properties of the finished products may be tailored to achieve desired properties. In addition, the invention teaches that radiation shielding, insulators, and combined radiation shield/insulators may be fashioned from the composite. A wide range of production methods may be employed, including but not limited to liquid resin casting.

Abstract: This invention provides a reducing-atmosphere-resistant thermistor element, the resistance of which does not greatly change even when the element is exposed to a reducing atmosphere, and which has high accuracy and exhibits excellent resistance value stability. The thermistor element has a construction in which an oxygen occlusion-release composition, having oxygen occlusion-release characteristics, such as CeO2 is dispersed in a composition containing a mixed sintered body (M1 M2)O3.AOx as a principal component. The oxygen occlusion-release composition emits absorbed oxygen in a reducing atmosphere and suppresses migration of oxygen from the composition constituting the element. Therefore, the resistance value does not greatly change even when the element is exposed to a reducing atmosphere, and the element can accurately detect the temperature for a long time. The present invention can thus provide a temperature sensor having high reliability.

Abstract: The disclosure relates to a reversible, electrically controllable light transmission (RECLT) film, article of manufacture composition, process and product produced by the process, comprising a conductive narrow composition distribution polyvinylidene fluoride copolymer in combination with an electrolyte and an RECLT material. The narrow composition distribution polyvinylidene fluoride copolymer has low solubility, high thermal stability and strength, and very high optical clarity. The polyvinylidene fluoride copolymer comprises a nonporous or porous copolymer of vinylidene fluoride preferably with either hexafluoropropylene or tetrafluoroethylene or chlorotrifluoroethylene, or vinyl acetate, or combinations thereof. The RECLT material includes organic or inorganic compounds known in the art. Typical RECLT materials include electrochromic materials, reversible metal electrodeposition materials, liquid crystal materials and dispersed particle materials.

Abstract: A silicon nitride sintered material containing a silicon nitride component and silicon carbide having an average particle size of 1 &mgr;m or less in an amount of at least 1 mass % and less than 4 mass %, based on 100 mass % of the silicon nitride component. The carbide is dispersed in the silicon nitride component, and the silicon nitride sintered material has a thermal expansion coefficient of at least 3.7 ppm/° C. between room temperature and 1,000° C. The silicon nitride component contains a rare earth element in an amount of 15-25 mass % as reduced to a certain oxide thereof and Cr in an amount of 5-10 mass % as reduced to a certain oxide thereof, and a crystalline phase is present in intergrain regions of the sintered material.

Abstract: Oxide bronze compositions and articles manufactured in accordance therewith are provided. The oxide bronze compositions have the general formula AxBOy, in which A comprises an alkali, alkaline earth or rare earth metal and in which A has a valence, m, equal to 1, 2 or 3, B comprises a transition metal having a valence, n, less than or equal to 6,0<x<1 on an atomic ratio basis and y=[(x)(m)+n]/2. High temperature superconducting devices incorporating such compositions are also provided. The superconducting devices include a substrate having a polycrystalline superconducting layer or filament deposited on top of or embedded in the substrate. The superconducting layer or filament is formed of the oxide bronze composition. In some embodiments, the oxide bronze layer is textured with a full-width-half-maximum of a pole figure of less than or equal to 20 degrees.

Abstract: A ceramic bearing ball in which at least a portion of a constituent ceramic is formed of an electrically conductive inorganic compound phase, whereby a proper electrical conductivity is imparted to the ceramic. Thus, electrifying of a bearing ball is prevented or effectively suppressed. This prevents the problem involved in production of balls of small diameter wherein such balls adhere to an apparatus (e.g., a container) during production thereof, thus hindering smooth progress of the production process. In addition, when ceramic balls are used in precision electronic equipment, such as a hard disk drive of a computer, which is operated at high rotational speed, adhesion of foreign substance due to electrification of the balls, and resultant generation of abnormal noise or vibration can be prevented or effectively suppressed.

Abstract: A wiring board having an insulating substrate of aluminum oxide ceramics and a surface wiring layer formed on the surface of said insulating substrate, wherein the aluminum oxide ceramics constituting said insulating substrate contains a manganese compound in an amount of from 2.0 to 10.0% by weight in terms of MnO2, and has a relative density of not smaller than 95%, and said surface wiring layer contains copper in an amount of from 10 to 70% by volume and at least one high-melting metal selected from the group consisting of tungsten and molybdenum in an amount of from 30 to 90% by volume, and further contains copper as a matrix, said copper matrix having a diffusion structure in which are diffused the particles of said high-melting metal having an average particle diameter of from 1 to 10 &mgr;m.

Abstract: The thermistor portion of a thermistor device consists of a mixed sintered body of aY(Cr0.5Mn0.5)O3.bAl2O3 made of the perovskite-type compound Y(Cr0.5Mn0.5)O3 and Al2O3, or a mixed sintered body of aY(Cr0.5Mn0.5)O3.b(Al2O3+Y2O3) made of Y(Cr0.5Mn0.5)O3, Al2O3 and Y2O3. The mole fractions a and b have the relationships 0.05≦a>1.0, 0<b≦0.95 and a+b=1. This is required to obtain a thermistor device that has stable characteristics and exhibits a small change in its resistance value, even in a heat history from room temperature to 1000° C. or the like, and also has a resistance value of 50&OHgr; to 100 k&OHgr; in the temperature range from room temperature to 1000° C.

Abstract: Apparatus and methods for manufacturing electrochromic cells. Layers of various inks are printed on substrates by high speed printing means. The electrochromic cells comprise layers of electrode, electrolyte, and counter electrode ink materials which are printed on at least one substrate. When an electrical voltage differential is introduced between the electrode and counter electrode layers, an electrochemical reaction occurs in the electrochemical cell.

Abstract: The thermistor element of the present invention is composed of a mixed sintered body aM1M2O3.bY2O3 of a composition M1M2O3 (wherein M1 is Y, and M2 is at least one element selected from the elements such as Cr, Mn, Ti, etc.) as a perovskite compound and Y2O3, wherein molar fractions a and b satisfy the relations 0.05≦a<1.0, 0<b≦0.95 and a+b=1. Another wide-range type thermistor element of the present invention is composed of a perovskite compound M1(M2M3)O3, wherein M1 is at least one element selected from the elements of the groups II and IIIA excluding La in the Periodic Table, and each of M2 and M3 is at least one element selected from the elements of the groups IIB, IIIB, IVA, VA, VIA, VIIA and VIII. a and b satisfy the relations a+b=1 and 0<b<0.1, where a is a molar fraction of M2 and b is a molar fraction of M3 in M1(M2M3)O3.

Abstract: The invention relates to the filed of producing electroconductive ceramics on the basis of lanthanum chromite and intended for high-temperature applications (about 2000K). The object of the invention is to increase the heating rate of the ceramics, which will make it possible to reduce the time of the working operation, and ensure its improved thermal stability, which will increase the reliability of operation at high temperature. The goal is achieved by supplementing ceramics based on lanthanum chromite and containing zirconium dioxide, with alloying and stabilizing additives of lanthanum aluminate, yttrium chromite, magnesium chromite and cerium dioxide.