Rare Earth Metal Compound Patents (Class 252/521.1)
  • Publication number: 20020053662
    Abstract: Improved Hg-containing superconducting films and thermoelectric materials are provided. The films are fabricated by annealing starting Tl-containing films (e.g., Tl-1212 or Tl-2212) in an Hg-vapor environment so as to cause a substitution of Tl by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial Tl-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900° C. for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50%. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor.
    Type: Application
    Filed: April 27, 2001
    Publication date: May 9, 2002
    Inventors: Judy Wu, Shao Lin Yan, Yiyuan Xie
  • Patent number: 6375869
    Abstract: Manganese-free rare earth-transition metal AB5-type hydrogen-absorbing alloys having favorable high rate discharge characteristics, suitable for use in rechargeable batteries for electrical vehicles or hybrid electrical vehicles, include compositions of the general formula: R(CouAlvMwNi1−u−v−w)z, where R is at least one element selected from rare earth elements and yttrium (Y), M is at least one refractory metal selected from Groups IVB, VB, and VIB of the periodic table, the value of u is from 0 to about 0.25, v is from 0 to about 0.10, w is from 0 to about 0.05, and z, the ratio of R(CouAlvMwNi1−u−v−w)/R, is from about 4.70 to about 5.50. The unit cell volume is from about 87 to about 88.5 A3 at 25° C., the plateau pressure is from about 3 to about 10 apsi at 25° C., and the composition is essentially free of manganese.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: April 23, 2002
    Assignee: Santoku Corporation
    Inventors: Tsong P. Perng, Bao-Min Ma, James Landi, Qun Chen
  • Publication number: 20020003228
    Abstract: A ceramic bearing ball in which at least a portion of a constituent ceramic is formed of an electrically conductive inorganic compound phase, whereby a proper electrical conductivity is imparted to the ceramic. Thus, electrifying of a bearing ball is prevented or effectively suppressed. This prevents the problem involved in production of balls of small diameter wherein such balls adhere to an apparatus (e.g., a container) during production thereof, thus hindering smooth progress of the production process. In addition, when ceramic balls are used in precision electronic equipment, such as a hard disk drive of a computer, which is operated at high rotational speed, adhesion of foreign substance due to electrification of the balls, and resultant generation of abnormal noise or vibration can be prevented or effectively suppressed.
    Type: Application
    Filed: April 10, 2001
    Publication date: January 10, 2002
    Inventors: Tomonori Niwa, Tetsuji Yogo
  • Patent number: 6319429
    Abstract: Oxygen sensitive resistance materials for use with oxygen sensors, in particular &lgr; probes are described. These materials are based on the fact that with complex metal oxides it is possible—by adding suitable doping substances—to achieve a negligible temperature dependence of the electric resistance of these materials for different oxygen partial pressures and to preset it to a desired partial pressure value.
    Type: Grant
    Filed: April 6, 2000
    Date of Patent: November 20, 2001
    Assignee: DaimlerChrysler AG
    Inventors: Ralf Moos, Wolfgang Menesklou, Hans-Jürgen Schreiner, Karl Heinz Härdtl
  • Patent number: 6306315
    Abstract: The thermistor portion of a thermistor device consists of a mixed sintered body of aY(Cr0.5Mn0.5)O3.bAl2O3 made of the perovskite-type compound Y(Cr0.5Mn0.5)O3 and Al2O3, or a mixed sintered body of aY(Cr0.5Mn0.5)O3.b(Al2O3+Y2O3) made of Y(Cr0.5Mn0.5)O3, Al2O3 and Y2O3. The mole fractions a and b have the relationships 0.05≦a>1.0, 0<b≦0.95 and a+b=1. This is required to obtain a thermistor device that has stable characteristics and exhibits a small change in its resistance value, even in a heat history from room temperature to 1000° C. or the like, and also has a resistance value of 50&OHgr; to 100 k&OHgr; in the temperature range from room temperature to 1000° C.
    Type: Grant
    Filed: February 25, 1999
    Date of Patent: October 23, 2001
    Assignees: Denso Corporation, Nippon Soken, Inc.
    Inventors: Itsuhei Ogata, Masanori Yamada, Eturo Yasuda, Kaoru Kuzuoka
  • Publication number: 20010017152
    Abstract: This invention provides a complex oxide comprising the features of: (i) being represented by the formula: Ca3-xRExCo4Oy wherein RE is a rare earth element, 0≦x≦0.5 and 8.5≦y≦10, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 300° C. or higher, and (iii) having an electric conductivity of 103 S/m or more at a temperature of 300° C. or higher. The complex oxide is composed of low-toxicity elements, excellent in heat resistance and chemical durability and high in thermoelectric conversion efficiency.
    Type: Application
    Filed: December 8, 2000
    Publication date: August 30, 2001
    Inventors: Ryoji Funahashi, Ichiro Matsubara, Satoshi Sodeoka
  • Patent number: 6261480
    Abstract: The thermistor element of the present invention is composed of a mixed sintered body aM1M2O3.bY2O3 of a composition M1M2O3 (wherein M1 is Y, and M2 is at least one element selected from the elements such as Cr, Mn, Ti, etc.) as a perovskite compound and Y2O3, wherein molar fractions a and b satisfy the relations 0.05≦a<1.0, 0<b≦0.95 and a+b=1. Another wide-range type thermistor element of the present invention is composed of a perovskite compound M1(M2M3)O3, wherein M1 is at least one element selected from the elements of the groups II and IIIA excluding La in the Periodic Table, and each of M2 and M3 is at least one element selected from the elements of the groups IIB, IIIB, IVA, VA, VIA, VIIA and VIII. a and b satisfy the relations a+b=1 and 0<b<0.1, where a is a molar fraction of M2 and b is a molar fraction of M3 in M1(M2M3)O3.
    Type: Grant
    Filed: August 25, 1999
    Date of Patent: July 17, 2001
    Assignees: Denso Corporation, Nippon Soken, Inc.
    Inventors: Itsuhei Ogata, Takumi Kataoka, Eturo Yasuda, Kaoru Kuzuoka, Masanori Yamada
  • Patent number: 6255255
    Abstract: An oxide superconducting material includes a REBa2Cu3O7−x phase (RE designating one or a combination of two or more rare earth elements including Y), particles composed of Ce, Ba, Cu and O dispersed therein, and RE2BaCuO5 or RE4Ba2Cu2O10 dispersed therein. A method is provided for producing the superconducting material from a mixed powder obtained by adding a Ce—Ba—Cu—O system additive to a starting material powder containing RE, Ba, Cu and O.
    Type: Grant
    Filed: November 29, 1999
    Date of Patent: July 3, 2001
    Assignee: Nippon Steel Corporation
    Inventors: Mitsuru Morita, Tetsuro Nose
  • Patent number: 6242268
    Abstract: Homogeneous assays for determining quantitatively the extent of a specific binding reaction can be carried out effectively on very dilute solutions using measurements of fluorescence if a fluorescence measurement scheme that is capable of rejecting short-lived background fluorescence is employed and if the fluorescent group being measured has the following properties: a. the group being measured must be a rare earth metal chelate complex combination; b. the chelate must be water-soluble; c. the complex combination must also be stable in extremely dilute aqueous solutions, that is, the measured chelate must have at least one ligand having a metal-to-ligand binding constant of at least about 1013M−1 or greater and it must have a fluorescent emission that is long-lived compared to the longest decay lifetime of ambient substances and have a half life of from 0.01 to 50 msec.
    Type: Grant
    Filed: November 2, 1998
    Date of Patent: June 5, 2001
    Assignee: EG&G Wallac
    Inventors: Irwin Wieder, Ron L. Hale
  • Patent number: 6224790
    Abstract: A conductive composite sintered body exhibiting PTC behavior, including a high electrical resistance matrix and 20 vol %-40 vol % electrically conductive particles dispersed in the matrix to form an electrically conducting three-dimensional network therethrough. The electrically conductive particles are selected from bismuth, gallium, or alloys thereof, and an average distance between the particles, when viewed in an arbitrary cross-section through the sintered body, is no more than 8 times the average particle diameter of the particles. The resistivity of the sintered body is low at temperatures below the melting point of the electrically conductive material and increases substantially at or above the melting point.
    Type: Grant
    Filed: June 2, 1999
    Date of Patent: May 1, 2001
    Assignee: NGK Insulators, Ltd.
    Inventor: Yoshihiko Ishida
  • Patent number: 6222262
    Abstract: A semiconductor ceramic device includes a semiconductor ceramic sintered body and external electrodes. The semiconductor ceramic sintered body contains a lanthanum cobalt type oxide major component, about 0.1 to 10 mol % on an element conversion basis of an oxide of Cr as a sub-component, and about 0.001 to 0.5 mol % on an element conversion basis of at least one of the oxides of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn.
    Type: Grant
    Filed: December 3, 1999
    Date of Patent: April 24, 2001
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Satoshi Ueno, Akinori Nakayama, Terunobu Ishikawa, Hideaki Niimi, Yoichi Kawase
  • Patent number: 6200501
    Abstract: The invention relates to the filed of producing electroconductive ceramics on the basis of lanthanum chromite and intended for high-temperature applications (about 2000K). The object of the invention is to increase the heating rate of the ceramics, which will make it possible to reduce the time of the working operation, and ensure its improved thermal stability, which will increase the reliability of operation at high temperature. The goal is achieved by supplementing ceramics based on lanthanum chromite and containing zirconium dioxide, with alloying and stabilizing additives of lanthanum aluminate, yttrium chromite, magnesium chromite and cerium dioxide.
    Type: Grant
    Filed: February 28, 2000
    Date of Patent: March 13, 2001
    Inventor: Rustam Rakhimov
  • Patent number: 6193911
    Abstract: Precursor solutions are provided to produce thin film resistive materials by combustion chemical vapor deposition (CCVD) or controlled atmosphere combustion chemical vapor deposition (CACCVD). The resistive material may be a mixture of a zero valence metal and a dielectric material, or the resistive materials may be a conductive oxide.
    Type: Grant
    Filed: April 29, 1998
    Date of Patent: February 27, 2001
    Assignee: Morton International Incorporated
    Inventors: Andrew T. Hunt, Tzyy Jiuan Hwang, Helmut G. Hornis, Hong Shao, Joe Thomas, Wen-Yi Lin, Shara S. Shoup, Henry A. Luten, John Eric McEntyre