Abstract: A dielectric ceramic material is composed of a perovskite compound represented by ABO3 as a main component. In the case where ABO3 is, for example, BaTiO3, the crystal grains include BaTiO3 crystal grains composed of the main component and, as secondary phases, Mg—Ni—Ti-containing crystalline grains composed of a crystalline oxide containing at least Mg, Ni, and Ti and Ba—Si-containing crystalline grains composed of a crystalline oxide containing at least Ba and Si.

Abstract: A dielectric ceramic composition comprises, a main component including barium titanate, a first subcomponent including MgO, a second subcomponent including sintering aids of SiO2 compound, a third subcomponent including at least one of V2O5, Nb2O5 and WO3, a fourth A subcomponent including RA oxide (note that, RA is at least one selected from Tb, Gd and Dy), a fourth B subcomponent including R oxide (note that, R is at least one selected from Ho, Y and Yb), and a fifth subcomponent including MnO or Cr2O3.

Abstract: Provided is a dielectric ceramic in which, while achieving a dielectric constant ? of 500 or more, a breakdown voltage higher than 90 kV/mm can be obtained and which is suitable for constituting dielectric ceramic layers of a multilayer ceramic capacitor for medium-to-high voltage application. As the dielectric ceramic constituting dielectric ceramic layers of the multilayer ceramic capacitor, a dielectric ceramic including, as a main component, (Ba1-xCax)mTiO3 where 0.30?x?0.50, and 0.950?m?1.025 is used. Preferably, the dielectric ceramic further includes a rare-earth element in an amount of 1 to 14 parts by mole relative to 100 parts by mole of the main component, and further includes Mn, Mg, and Si, respectively, in amounts of 0.1 to 3.0 parts by mole, 0.5 to 5.0 parts by mole, and 1.0 to 5.0 parts by mole relative to 100 parts by mole of the main component.

Abstract: The invention relates to a ceramic dielectric material and to capacitors including the ceramic dielectric material. The ceramic dielectric material of the invention exhibits a high relative dielectric constant and a stable temperature characteristic of the relative dielectric constant.

Abstract: To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.

Abstract: A sintered body for thermistor device comprising: at least one element selected from elements of group 3 in a periodic table proviso that La is excluded; at least one element selected from elements of group 2 in a periodic table; Mn; Al; and oxygen, and being substantially free from any transition metal other than Mn and the at least one element selected from elements of group 3 in the periodic table.

Abstract: A coating material, green sheet and the method capable of producing a green sheet without a pin hole, having enough strength to be peeled from a support body and excellent surface smoothness even when the green sheet is extremely thin, and being suitable to make an electronic device thin and multilayered, are provided. The present invention provides a green sheet coating material comprising a ceramic powder, a binder resin including a butyral based resin as a main component thereof, and a solvent. The solvent includes a first solvent having an SP value as a solubility parameter of 10 or larger and a second solvent having the SP value of 8 or larger but smaller than 10. The second solvent is included by 20 to 60 wt % and, preferably, 25 to 60 wt % with respect to 100 wt % of the solvent as the entire weight.

Abstract: The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

Abstract: The present invention provides a method of removing spectator ions and contaminants from aqueous suspensions of solid particles. In accordance with the method of the invention, the solid particles are transported across a phase boundary into a non-polar organic solvent, leaving the spectator ions and contaminants in the aqueous phase. To facilitate the efficient transportation of the solid particles across the phase boundary, the surface of the solid particles is coated with an amphiphilic polyelectrolyte. If desired, the solid particles can be recovered from the organic phase by evaporating the organic solvent.

Abstract: A composite including a plurality of semiconductor nanocrystals distributed in a metal oxide matrix can be used as an optical amplifier, a waveguide or a laser.