Etching Or Brightening Compositions Patents (Class 252/79.1)
  • Patent number: 10364373
    Abstract: CMP compositions providing stable and robust polishing performance at elevated pad or wafer surface temperatures are disclosed, as well as methods for use thereof. The compositions of the disclosure include reaction rate optimizing (RRO) compounds that optimize various chemical reactions occurring in the slurry chemistry at elevated polishing temperatures on the wafer surface, such that removal rate variation within an individual wafer is <10%.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: July 30, 2019
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventor: Deepak Mahulikar
  • Patent number: 10351809
    Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: July 16, 2019
    Assignee: Entegris, Inc.
    Inventors: Elizabeth Thomas, Donald Frye, Jun Liu, Michael White, Danela White, Chao-Yu Wang
  • Patent number: 10344184
    Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: July 9, 2019
    Assignee: NITTA HAAS INCORPORATED
    Inventors: Masashi Teramoto, Tatsuya Nakauchi, Noriaki Sugita, Shinichi Haba, Akiko Miyamoto
  • Patent number: 10344183
    Abstract: The present invention relates to a suspension of cerium oxide particles in a liquid phase, in which said particles comprise secondary particles comprising primary particles, and a process for preparing said liquid suspension in which the cerium IV/total cerium molar ratio before precipitation is comprised between 1/10000 and 1/500000 and that the thermal treatment is being carried out under an inert atmosphere.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: July 9, 2019
    Assignee: Rhodia Operations
    Inventors: Eisaku Suda, Manabu Yuasa, Takao Sekimoto
  • Patent number: 10151035
    Abstract: Walls of through-holes and vias of substrates with dielectric material are electroless plated with copper using tin-free ionic silver catalysts. Conductive polymers are first formed on the substrates by treating the substrates with a permanganate solution containing complexing anions followed by applying monomers, oligomers or conductive polymers to the substrate to form a conductive polymer coating on the dielectric of the substrate as well as on the walls of through-holes and vias of the substrate. A tin-free ionic silver catalyst is then applied to the treated substrate. Optionally, the tin-free ionic silver catalyst can include a ligand agent to form a coordination entity with the silver ions of the tin-free catalyst. The silver ions of the tin-free catalyst are reduced by the conductive polymer and then an electroless metal copper bath is applied to the treated substrate to copper plate the dielectric and walls of the through-holes and vias of the substrate.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: December 11, 2018
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Benjamin Naab
  • Patent number: 10150890
    Abstract: Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.
    Type: Grant
    Filed: December 7, 2015
    Date of Patent: December 11, 2018
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Jeong Hwan Jeong, Young Chul Jung, Dong Hun Kang, Tae Wan Kim, Jong Il Noh, Chang Ki Hong
  • Patent number: 10131819
    Abstract: A polishing liquid comprising abrasive grains, an additive, and water, wherein the abrasive grains include a hydroxide of a tetravalent metal element, produce absorbance of 1.00 or more for light having a wavelength of 400 nm in a first aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %, and produce light transmittance of 50%/cm or more for light having a wavelength of 500 nm in the first aqueous dispersion, and a NO3? concentration of a second aqueous dispersion obtained by retaining the first aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: November 20, 2018
    Assignee: HITACHI CHEMICAL COMPANY, LTD
    Inventor: Tomohiro Iwano
  • Patent number: 10109493
    Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: October 23, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado
  • Patent number: 10100225
    Abstract: A CMP slurry composition for polishing a metal wire and a polishing method, the CMP slurry composition including polishing particles; an oxidant; a complexing agent; a corrosion inhibitor; and deionized water, wherein the corrosion inhibitor includes an inorganic nitrite or ammonium nitrate.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: October 16, 2018
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: So Hyung Lee, Keun Bong Do, Dong Jin Kim, Kang Su An, Young Chul Jung
  • Patent number: 10077380
    Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: September 18, 2018
    Assignee: NITTA HAAS INCORPORATED
    Inventors: Masashi Teramoto, Tatsuya Nakauchi, Noriaki Sugita, Shinichi Haba, Akiko Miyamoto
  • Patent number: 9994735
    Abstract: A slurry composition for polishing tungsten is provided. The slurry composition for polishing tungsten may include a water-soluble polymer, abrasive particles and an etching adjuster.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: June 12, 2018
    Assignee: KCTECH CO., LTD.
    Inventors: Jin Sook Hwang, Hyun Goo Kong, Han Teo Park
  • Patent number: 9957469
    Abstract: There are provided metal corrosion inhibition cleaning compositions, methods and system for copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), and aluminum (Al). The metal corrosion inhibition cleaning compositions provide corrosion inhibition effects by use a combination of two chemicals—at least one multi-functional amine that has more than one amino groups; and at least one multi-functional acid that has more than one carboxylate groups. The metal corrosion inhibition cleaning compositions are effective for cleaning the residues deriving from high density plasma etching followed by ashing with oxygen containing plasmas; and slurry particles and residues remaining after chemical mechanical polishing (CMP).
    Type: Grant
    Filed: July 2, 2015
    Date of Patent: May 1, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Wen Dar Liu, Seiji Inaoka, Yi-Chia Lee, Agnes Derecskei-Kovacs
  • Patent number: 9909032
    Abstract: The invention provides a chemical-mechanical polishing composition containing aluminate-modified silica particles, a polyacrylamide, a heterocyclic film-forming agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: March 6, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Selvaraj Palanisamy Chinnathambi, Michael White
  • Patent number: 9909033
    Abstract: The invention relates to a suspension of cerium oxide particles, of which the particles (secondary particles) have an average size of at most 200 nm, these secondary particles consisting of primary particles whose average size measured by TEM is of at most 150 nm with a standard deviation of at most 30% of the value of said average size, and for which the ratio of the average size measured by TEM to the average size measured by BET is at least 1.5. This suspension is prepared from a solution of a cerium III salt, comprising a colloidal dispersion of cerium IV, which is brought into contact, in the presence of nitrate ions and under an inert atmosphere, with a base; the medium obtained is subjected to a thermal treatment under an inert atmosphere and then acidified and washed. The suspension can be used for polishing.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: March 6, 2018
    Assignee: Rhodia Operations
    Inventors: Guillaume Criniere, Laurent Thiers
  • Patent number: 9892932
    Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: February 13, 2018
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc., Air Liquide Electronics U.S. LP
    Inventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
  • Patent number: 9852899
    Abstract: Some embodiments are directed to a wafer polishing tool. The wafer polishing tool includes a first polisher, a second polisher downstream of the first polisher, a third polisher downstream of the second polisher, and a fourth polisher downstream of the third polisher. The first polisher receives a wafer having a front side and a back side with integrated circuit component devices disposed on the front side of the wafer, and polishes a center region on the back side of the wafer. The second polisher receives the wafer via transporting equipment and buffs the center region of the back side of the wafer. The third polisher receives the wafer via the transporting equipment and polishes a back side edge region of the wafer. The fourth polisher receives the wafer via the transporting equipment and buffs the back side edge region of the wafer.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: December 26, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shen-Nan Lee, Teng-Chun Tsai, Hsin-Hsien Lu, Chang-Sheng Lin, Kuo-Cheng Lien, Kuo-Yin Lin, Wen-Kuei Liu, Yu-Wei Chou
  • Patent number: 9850402
    Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: December 26, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Dmitry Dinega, Sairam Shekhar, Renhe Jia, Daniel Mateja
  • Patent number: 9834703
    Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains abrasive grains, an oxidizing agent, and a water-soluble polymer. When the polishing composition is left to stand for one day in an environment with a temperature of 25° C., the water-soluble polymer may be adsorbed on the abrasive grains at 5,000 or more molecules per 1 ?m2 of the surface area of the abrasive grains. Alternatively, the water-soluble polymer may be a compound that reduces the water contact angle of the portion containing a group III-V compound material of the object after being polished with the polishing composition.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: December 5, 2017
    Assignee: FUJIMI INCORPORATED
    Inventors: Shuugo Yokota, Yasuyuki Yamato, Satoru Yarita, Tomohiko Akatsuka
  • Patent number: 9803106
    Abstract: Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: October 31, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Jeffrey Dysard, Ernest Shen, Mary Cavanaugh, Daniel Clingerman
  • Patent number: 9790600
    Abstract: Object is to provide an etching solution which generates less foam and can etch copper or copper alloy at high selectivity when used in a step of etching copper or 5 copper alloy in an electronic substrate having both of copper or copper alloy and nickel. The etching solution to be used in a step of selectively etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel has, as essential components thereof, (A) a linear alkanolamine, (B) a chelating agent having an acid group in the molecule thereof, and (C) hydrogen peroxide.
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: October 17, 2017
    Assignee: ENTEGRIS, INC.
    Inventors: Tsutomu Kojima, Yukichi Koji
  • Patent number: 9771496
    Abstract: Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: September 26, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Kevin Dockery, Helin Huang, Lin Fu, Tina Li
  • Patent number: 9706634
    Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: July 11, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc
    Inventors: Shurong Liang, Costel Biloiu, Glen F. R. Gilchrist, Vikram Singh, Christopher Campbell, Richard Hertel, Alexander Kontos, Piero Sferlazzo, Tsung-Liang Chen
  • Patent number: 9691625
    Abstract: A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A bi-modal process gas composition is supplied to a plasma generation region overlying the substrate. For a first period of time, a first radiofrequency power is applied to the bi-modal process gas composition to generate a plasma to cause etching-dominant effects on the substrate. For a second period of time, after completion of the first period of time, a second radiofrequency power is applied to the bi-modal process gas composition to generate the plasma to cause deposition-dominant effects on the substrate. The first and second radiofrequency powers are applied in an alternating and successive manner for an overall period of time to remove a required amount of exposed target material.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: June 27, 2017
    Assignee: Lam Research Corporation
    Inventors: Zhongkui Tan, Qian Fu, Ying Wu, Qing Xu
  • Patent number: 9673176
    Abstract: The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibility.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: June 6, 2017
    Assignee: International Business Machines Corporation
    Inventors: Tien-Jen Cheng, Mukta G. Farooq, John A. Fitzsimmons
  • Patent number: 9666563
    Abstract: The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibility.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: May 30, 2017
    Assignee: International Business Machines Corporation
    Inventors: Tien-Jen Cheng, Mukta G. Farooq, John A. Fitzsimmons
  • Patent number: 9644274
    Abstract: The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: May 9, 2017
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Satoshi Tamai, Kunio Yube, Satoshi Okabe
  • Patent number: 9617450
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: April 11, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Shoutian Li, William Ward, Pankaj Singh, Jeffrey Dysard
  • Patent number: 9595716
    Abstract: An electrode for an energy store, in particular for a lithium-ion battery. To achieve a particularly good and long-term stable capacitance, the electrode includes an active material, optionally a binder, optionally a conductive additive, and a sorption agent; intermediate stages of the active material arising during a charging and/or discharging procedure of the energy store may be immobilized by the sorption agent. Furthermore, also described is a method for manufacturing an electrode for an energy store, and the use of a sorption agent for manufacturing an electrode for an electrochemical energy store.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: March 14, 2017
    Assignee: ROBERT BOSCH GMBH
    Inventors: Marcus Wegner, Jens Grimminger, Martin Tenzer, Jean Fanous
  • Patent number: 9593261
    Abstract: The present invention relates to a polishing agent including: cerium oxide particles; a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, in which the polishing agent has a pH of 7 or less.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: March 14, 2017
    Assignee: ASAHI GLASS COMPANY, LIMITED
    Inventor: Yuiko Yoshida
  • Patent number: 9551075
    Abstract: A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm, and (v) first oxide particles with a per surface area per unit mass <100 m2/gm mixed with another oxide particle type having an average area per unit mass >150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: January 24, 2017
    Assignees: Sinmat, Inc., University of Florida Research Foundation, Inc.
    Inventors: Rajiv K. Singh, Kannan Balasundaram, Arul Chakkaravarthi Arjunan, Deepika Singh, Wei Bai
  • Patent number: 9546321
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
    Type: Grant
    Filed: December 27, 2012
    Date of Patent: January 17, 2017
    Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jeffrey A. Barnes, Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Rekha Rajaram, Sheng-Hung Tu
  • Patent number: 9528031
    Abstract: Slurry composition and a method of substrate polishing used in chemical mechanical polishing (CMP). The present invention concerns a slurry composition containing a polishing agent and a water soluble polymer. The slurry composition contains a water soluble polymer that has a solubility parameter in the range of 9.0 to 14.0 and that may contain hetero atoms at a level sufficient to lower the polishing rate near the edges of the polished substrate defined as the region within 1 mm of the outer edge of the polished substrate to a level below the mean polishing rate of the polished substrate. The water soluble polymer may have a mean molecular weight in the range of 200 to about 3,000,000, and the mean molecular weight may be in the range of 200 to 110,000 if hetero atoms are present in the main-chain structure and the SP value is under 9.5.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: December 27, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hiroshi Kitamura, Tsuyoshi Masuda, Yoshiyuki Matsumura
  • Patent number: 9505951
    Abstract: [Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang. [Solution] Provided is a polishing composition which is used in the application to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition including abrasive grains, an oxidant, a metal corrosion inhibitor, a pH adjusting agent and water, in which an aspect ratio of abrasive grains is 1.22 or less and a ratio D90/D10 of a diameter D90 of particles when a cumulative particle weight from the fine particle side reaches 90% of the total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: November 29, 2016
    Assignee: FUJIMI INCORPORATED
    Inventors: Takahiro Umeda, Shogo Onishi, Takeshi Yoshikawa, Yoshihiro Kachi
  • Patent number: 9499721
    Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: November 22, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Jeffrey Dysard, Ernest Shen, Mary Cavanaugh
  • Patent number: 9493678
    Abstract: A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.
    Type: Grant
    Filed: January 15, 2015
    Date of Patent: November 15, 2016
    Assignee: UWiZ Technology Co., Ltd.
    Inventors: Yun Lung Ho, Chun Chieh Lee, Song Yuan Chang, Ming Hui Lu, Ming Che Ho
  • Patent number: 9496146
    Abstract: Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: November 15, 2016
    Assignee: BASF SE
    Inventors: Yuzhuo Li, Changxue Wang, Daniel Kwo-Hung Shen
  • Patent number: 9469787
    Abstract: A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: October 18, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Ke Zhang, Selvaraj Palanisamy Chinnathambi
  • Patent number: 9443739
    Abstract: A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: September 13, 2016
    Assignee: BASF SE
    Inventors: Bastian Marten Noller, Bettina Drescher, Christophe Gillot, Yuzhuo Li, Ning Gao
  • Patent number: 9437449
    Abstract: An integrated circuit may be formed by forming a sacrificial silicon nitride feature. At least a portion of the sacrificial silicon nitride feature may be removed by placing the integrated circuit in a two-step oxidized layer etch tool and removing a surface layer of oxidized silicon from the sacrificial silicon nitride feature using a two-step etch process. The two-step etch process exposes the integrated circuits to reactants from a plasma source at a temperature less than 40° C. and subsequently heating the integrated circuit to 80° C. to 120° C. while in the two-step oxidized layer etch tool. While the integrated circuit is in the two-step oxidized layer etch tool, without exposing the integrated circuit to an ambient containing more than 1 torr of oxygen, at least a portion of the sacrificial silicon nitride feature is removed using fluorine-containing etch reagents, substantially free of ammonia.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: September 6, 2016
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Tom Lii, David Farber
  • Patent number: 9368647
    Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
    Type: Grant
    Filed: August 12, 2015
    Date of Patent: June 14, 2016
    Assignees: Samsung Electronics Co., Ltd., Soulbrain Co., Ltd.
    Inventors: Young-Taek Hong, Jinuk Lee, Junghun Lim, Jaewan Park, Chanjin Jeong, Hoon Han, Seonghwan Park, Yanghwa Lee, Sang Won Bae, Daehong Eom, Byoungmoon Yoon, Jihoon Jeong, Kyunghyun Kim, Kyounghwan Kim, ChangSup Mun, Se-Ho Cha, Yongsun Ko
  • Patent number: 9368363
    Abstract: The present invention is a plasma etching gas comprising a fluorocarbon having 3 or 4 carbon atoms, the fluorocarbon including at least one unsaturated bond and/or ether linkage, and including a bromine atom, and a plasma etching method comprising subjecting a silicon oxide film on a substrate to plasma etching through a mask using a process gas, the process gas being the plasma etching gas. This plasma etching gas exhibits excellent etching selectivity, and has a short atmospheric lifetime and a low environmental impact. This plasma etching method makes it possible to selectively subject a silicon oxide film to plasma etching at a high etching rate without causing an increase in surface roughness.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: June 14, 2016
    Assignee: ZEON CORPORATION
    Inventor: Takefumi Suzuki
  • Patent number: 9318346
    Abstract: The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nm2 or less and the biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm. The association degree of the silica particles is 1.1 or more. The CMP polishing liquid has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed. The CMP polishing liquid can provide a method of producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: April 19, 2016
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Mamiko Kanamaru, Tomokazu Shimada, Takashi Shinoda
  • Patent number: 9224614
    Abstract: A method and associated composition for CMP processing of noble metal-containing substrates (such as ruthenium-containing substrates) afford both high removal rates of the noble metal and are tunable with respect to rate of noble metal removal in relation to removal of other films. Low levels of an oxidizing agent containing one or more peroxy-functional group(s) can be used along with a novel ligand to effectively polish noble metal substrates.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: December 29, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventor: Xiaobo Shi
  • Patent number: 9222018
    Abstract: Formulations for stripping titanium nitride (TiN or TiNxOy; x=0 to 1.3 and y=0 to 2) hard mask and removing titanium nitride etch residue are low pH (<4) comprise a weakly coordinating anion having negative charge highly dispersed throughout its structure, amine salt buffer, a non-oxidizing trace metal ion, a non-ambient trace oxidizer, and the remaining being solvent selected from the group consisting of water, sulfolane, dimethyl sulfide, lactic acid, glycol, and mixtures thereof. The formulations contain no hydrogen peroxide, and are exposed to air. Bifluoride, corrosion inhibitors, surfactants may be added to the formulations. Systems and processes use the formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: December 29, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: William Jack Casteel, Jr., Seiji Inaoka, Wen Dar Liu, Tianniu Chen
  • Patent number: 9200372
    Abstract: This disclosure relates to a passivation composition containing at least one sulfonic acid, at least one compound containing a nitrate or nitrosyl ion, and water. The passivation composition is substantially free of a halide ion.
    Type: Grant
    Filed: October 22, 2012
    Date of Patent: December 1, 2015
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: William A. Wojtczak, Bing Du, Tomonori Takahashi
  • Patent number: 9158204
    Abstract: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: October 13, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chawon Koh, Su Min Kim, Hyunwoo Kim, Hyojin Yun
  • Patent number: 9097996
    Abstract: The invention relates to silicon dioxide powder which is present in the form of aggregated primary particles having an average diameter of at least 40 nm and a ratio of the BET surface area to the STSA surface area of at least 3.5. The invention also relates to a toner composition containing said silicon dioxide powder.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: August 4, 2015
    Assignee: Evonik Degussa GmbH
    Inventor: Andreas Hille
  • Patent number: 9068274
    Abstract: Methods to etch a workpiece are described. In one embodiment, a workpiece is disposed within an etchant solution having a composition comprising a dilute acid and a non-ionic surfactant. An electric field is generated within the etchant solution to cause an anisotropic etch pattern to form on a surface of the workpiece.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: June 30, 2015
    Assignee: WD Media, LLC
    Inventor: Norbert Staud
  • Patent number: 9057827
    Abstract: Provided are an optical transmission structure having a high degree of flexibility in the design of an optical waveguide and a method for manufacturing the optical transmission structure, and also an optical transmission module. An optical transmission structure includes a main substrate (30), a cladding member (40), and core members (50). The main substrate (30) has a through hole (30a) penetrating therethrough in a thickness direction thereof. The cladding member (40) is disposed inside the through hole (30a) and has a plurality of optical waveguide holes (40a) penetrating therethrough in a thickness direction thereof. The core members (50) are disposed inside the plurality of optical waveguide holes (40a), respectively, and have a refractive index larger than the cladding member (40).
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: June 16, 2015
    Assignee: Kyocera Corporation
    Inventors: Maraki Maetani, Takahiro Matsubara, Yuji Masuda, Kaori Tanaka
  • Publication number: 20150147884
    Abstract: The present invention provides a slurry for chemical mechanical polishing, containing abrasive grain (a), compound (b) having an amino group having a pKa of more than 9, and not less than 3 hydroxyl groups, and water.
    Type: Application
    Filed: May 27, 2013
    Publication date: May 28, 2015
    Applicant: KURARAY CO., LTD.
    Inventors: Mitsuru Kato, Chihiro Okamoto, Shinya Kato