Etching Or Brightening Compositions Patents (Class 252/79.1)
  • Patent number: 8821747
    Abstract: A method for manufacturing a glass substrate for a magnetic disk comprises a surface grinding step of processing a mirror-surface plate glass, having a main surface in the form of a mirror surface, to a required flatness and surface roughness using fixed abrasive particles. The method comprises, before the surface grinding step using the fixed abrasive particles, a surface roughening step of roughening the surface of the mirror-surface plate glass by frosting.
    Type: Grant
    Filed: October 5, 2009
    Date of Patent: September 2, 2014
    Assignee: Hoya Corporation
    Inventors: Takanori Mizuno, Yosuke Suzuki
  • Patent number: 8821753
    Abstract: The present invention provides an etching solution for silver or silver alloy comprising one at least ammonium compound represented by the formula (1), (2) or (3) below and an oxidant:
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: September 2, 2014
    Assignee: Inktec Co., Ltd.
    Inventors: Kwang-Choon Chung, Hyun-Nam Cho, Young-Kwan Seo
  • Patent number: 8821752
    Abstract: The present invention provides an etching composition, comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method for fabricating a semiconductor, which includes an etching process employing the etching composition. The etching composition of the invention shows a high etching selectivity for a nitride film with respect to an oxide film. Thus, when the etching composition of the present invention is used to remove a nitride film, the effective field oxide height (EEH) may be easily controlled by controlling the etch rate of the oxide film. In addition, the deterioration in electrical characteristics caused by damage to an oxide film or etching of the oxide film may be prevented, and particle generation may be prevented, thereby ensuring the stability and reliability of the etching process.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: September 2, 2014
    Assignees: SK Hynix Inc., Soulbrain Co., Ltd.
    Inventors: Sung-Hyuk Cho, Kwon Hong, Hyung-Soon Park, Gyu-Hyun Kim, Ji-Hye Han, Jung-Hun Lim, Jin-Uk Lee, Jae-Wan Park, Chan-Keun Jung
  • Patent number: 8822339
    Abstract: The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat unit as a backbone and at least a polyethylene glycol repeating unit as a side chain, and a polishing method with using the slurry composition. The CMP slurry composition shows a low polishing rate to a single-crystalline silicon layer or a polysilicon layer and a high polishing rate to a silicon oxide layer, resulting in having an excellent polishing selectivity.
    Type: Grant
    Filed: October 13, 2010
    Date of Patent: September 2, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Dong-Mok Shin, Eun-Mi Choi, Seung-Beom Cho
  • Patent number: 8821751
    Abstract: A CMP composition and associated method are provided that afford good corrosion protection and low defectivity levels both during and subsequent to CMP processing. This composition and method are useful in CMP (chemical mechanical planarization) processing in semiconductor manufacture involving removal of metal(s) and/or barrier layer material(s) and especially for CMP processing in low technology node applications.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: September 2, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Xiaobo Shi, Ronald Martin Pearlstein
  • Publication number: 20140242798
    Abstract: A polishing composition of the present invention is used for polishing an object containing a phase-change alloy and is characterized by containing an ionic additive. Examples of the ionic additive include a cationic surfactant, an anionic surfactant, an amphoteric surfactant, and a cationic water-soluble polymer.
    Type: Application
    Filed: September 28, 2012
    Publication date: August 28, 2014
    Applicant: FUJIMI INCORPORATION
    Inventors: Yoshihiro Izawa, Yukinobu Yoshizaki
  • Publication number: 20140242750
    Abstract: The present invention provides a polishing slurry capable of polishing even high-hardness materials such as silicon carbide and gallium nitride at a high polishing speed. The present invention is a polishing slurry including a slurry containing a manganese oxide particle and a manganate ion for polishing high-hardness materials having a Mohs hardness of 8 or higher. In the present invention, the manganese oxide particle in the slurry is preferably 1.0 mass % or more; the manganese oxide is preferably manganese dioxide; and the manganate ion is preferably permanganate ion. The polishing slurry according to the present invention enables even high-hardness hardly-machinable materials such as silicon carbide and gallium nitride to be polished smoothly at a high speed.
    Type: Application
    Filed: October 12, 2012
    Publication date: August 28, 2014
    Inventors: Ryuichi Sato, Yohei Maruyama, Atsushi Koike
  • Publication number: 20140238953
    Abstract: Object is to provide an etching solution which generates less foam and can etch copper or copper alloy at high selectivity when used in a step of etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel. The etching solution to be used in a step of selectively etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel has, as essential components thereof, (A) a linear alkanolamine, (B) a chelating agent having an acid group in the molecule thereof, and (C) hydrogen peroxide.
    Type: Application
    Filed: September 28, 2012
    Publication date: August 28, 2014
    Inventors: Tsutomu Kojima, Yukichi Koji
  • Patent number: 8808573
    Abstract: The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The composition, at point of use, comprises about 0.01 to about 2 percent by weight of a particulate calcined ceria abrasive, about 10 to about 1000 ppm of at least one cationic polymer, optionally, about 10 to about 2000 ppm of a polyoxyalkylene polymer; and an aqueous carrier therefor. The at least one cationic polymer is selected from a poly(vinylpyridine) polymer and a combination of a poly(vinylpyridine) polymer and a quaternary ammonium-substituted polymer. Methods of polishing substrates and of selectively removing silicon nitride from a substrate in preference to removal of polysilicon using the compositions are also provided.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: August 19, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventor: William Ward
  • Patent number: 8801959
    Abstract: A stable, concentratable silicon wafer polishing composition for polishing silicon wafers is provided, containing: water; an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, optionally, a pH adjusting agent; wherein the polishing composition exhibits a silicon removal rate of at least 300 nm/min. Also provided are methods of making and using the stabilized, concentratable chemical mechanical polishing composition.
    Type: Grant
    Filed: April 11, 2013
    Date of Patent: August 12, 2014
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Naresh Kumar Penta, Lee Melbourne Cook
  • Patent number: 8801958
    Abstract: A titanium etchant composition and a method of forming a semiconductor device using the same, the titanium etchant composition including a titanium remover; a corrosion inhibitor; and a deionized water; wherein the corrosion inhibitor includes 5-aminotetrazole.
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: August 12, 2014
    Assignees: Samsung Electronics Co., Ltd., Samyoung Pure Chemicals Co., Ltd.
    Inventors: Dong-Min Kang, Heon jin Park, Kyoochul Cho, Baiksoon Choi, Seunghyun Ahn, Jeong Kwon, JungIg Jeon
  • Publication number: 20140220779
    Abstract: The disclosure provides polishing compositions that show a high polishing rate ratio of a silicon nitride (SiN) surface to a silicon oxide surface, and/or of a SiN surface to a polycrystalline silicon (Poly Si) surface. Such compositions comprise, in certain aspects, of colloidal silica, and one or more water soluble polymers, and has a pH of 6 or less, wherein the colloidal silica comprises one or more organic acids bound to its surface, and the water soluble polymer is a polyoxyalkylene hydrocarbyl ether which hydrocarbyl moiety has 12 or more carbon atoms.
    Type: Application
    Filed: January 31, 2014
    Publication date: August 7, 2014
    Inventors: Hooi-Sung Kim, Anne Miller
  • Publication number: 20140220299
    Abstract: The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.
    Type: Application
    Filed: April 7, 2014
    Publication date: August 7, 2014
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Iori YOSHIDA, Satoshi Takemiya, Hiroyuki Tomonaga
  • Patent number: 8795548
    Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, optionally, a pH adjusting agent; wherein the polishing composition exhibits a silicon removal rate of at least 300 nm/min. Also provided are methods of making and using the chemical mechanical polishing composition.
    Type: Grant
    Filed: April 11, 2013
    Date of Patent: August 5, 2014
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Naresh Kumar Penta, Lee Melbourne Cook
  • Patent number: 8795549
    Abstract: The present invention relates to novel printable etching media having improved properties for use in the process for the production of solar cells. These are corresponding particle-containing compositions by means of which extremely fine lines and structures can be etched very selectively without damaging or attacking adjacent areas.
    Type: Grant
    Filed: October 5, 2007
    Date of Patent: August 5, 2014
    Assignee: Merck Patent GmbH
    Inventors: Werner Stockum, Armin Kuebelbeck
  • Publication number: 20140213057
    Abstract: A chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a glycoside of the formulae 1 to 6 wherein R1 is alkyl, aryl, or alkylaryl, R2 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R3 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R4 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R5 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, and the total number of monosaccharide units (X1, X2, X3, X4, X5, or X6) in the glycoside is in the range of from 1 to 20, and (C) an aqueous medium.
    Type: Application
    Filed: September 4, 2012
    Publication date: July 31, 2014
    Applicant: BASF SE
    Inventor: Ning GAO
  • Publication number: 20140209566
    Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.
    Type: Application
    Filed: January 30, 2013
    Publication date: July 31, 2014
    Applicant: CABOT MICROELECTRONICS CORPORATION
    Inventors: Lin Fu, Steven Grumbine, Matthias Stender
  • Publication number: 20140206191
    Abstract: A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.
    Type: Application
    Filed: January 24, 2013
    Publication date: July 24, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Taiwan Semiconductor Manufacturing Company, Ltd.
  • Publication number: 20140202987
    Abstract: To provide an etchant for copper oxide, control of the etching rate, and etching method using the same for enabling exposed portions to be selectively etched against unexposed portions in the case of performing exposure with laser light using an oxide of copper as a heat-reactive resist material, an etchant of the invention is an etchant for copper oxide to selectively remove a copper oxide of a particular valence from a copper oxide-containing layer containing copper oxides of different valences, and is characterized by containing at least an amino acid, a chelating agent and water, where a weight percentage of the amino acid is higher than that of the chelating agent, and pH thereof is 3.5 or more.
    Type: Application
    Filed: June 27, 2012
    Publication date: July 24, 2014
    Applicant: ASAHI KASEI E-MATERIALS CORPORATION
    Inventors: Takuto Nakata, Norikiyo Nakagawa
  • Publication number: 20140197356
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
    Type: Application
    Filed: March 18, 2014
    Publication date: July 17, 2014
    Inventors: Kevin MOEGGENBORG, William Ward, Ming-Shih Tsai, Francesco De Rege Thesauro
  • Publication number: 20140199842
    Abstract: In one aspect, a substrate chemical mechanical polishing (CMP) method for substrates is disclosed. The CMP method includes providing a substrate having a surface of silicon and copper such as through silicon via regions containing copper, and polishing the surface with a slurry containing very small silicon nanoparticles (e.g., having an average diameter less than 8 nanometers). CMP systems and slurries for CMP are provided, as are numerous other aspects.
    Type: Application
    Filed: December 30, 2013
    Publication date: July 17, 2014
    Inventors: Vishwas V. Hardikar, Zhihong Wang, David Maxwell Gage, Thomas E. Gartner, III
  • Patent number: 8778212
    Abstract: The invention provides a chemical-mechanical polishing composition containing zirconia particles, a modifying agent that adheres to the zirconia particles, an organic acid, and water, as well as a method of using such a polishing composition to polish substrates and a method of using a polishing composition comprising zirconia particles, an organic acid, an oxidizing agent, and water to polishing substrates containing metal and oxide-based dielectric materials.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: July 15, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventors: Wiechang Jin, John Parker, Elizabeth Remsen
  • Patent number: 8778217
    Abstract: Disclosed is a polishing slurry for CMP which makes it possible to polish a barrier layer, a wiring metal layer and an interlayer dielectric continuously, and restrain a phenomenon that the interlayer dielectric in a region near the wiring metal layer is excessively shaven off so that a depression is generated. A polishing slurry, for CMP, containing abrasive particles, an acid, a tolyltriazole compound represented by the following general formula (I), and water: wherein R1s each independently represent an alkylene group having 1 to 4 carbon atoms, and R2 represents an alkylene group having 1 to 4 carbon atoms.
    Type: Grant
    Filed: July 4, 2007
    Date of Patent: July 15, 2014
    Assignee: Hitachi Chemical Company, Ltd.
    Inventor: Tadahiro Kimura
  • Patent number: 8778210
    Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.
    Type: Grant
    Filed: December 21, 2007
    Date of Patent: July 15, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Emanuel I. Cooper, Eileen R. Sparks, William R. Bowers, Mark A. Biscotto, Kevin P. Yanders, Michael B. Korzenski, Prerna Sonthalia, Nicole E. Thomas
  • Patent number: 8778211
    Abstract: The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.
    Type: Grant
    Filed: July 17, 2012
    Date of Patent: July 15, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventors: Matthias Stender, Glenn Whitener, Chul Woo Nam
  • Patent number: 8779011
    Abstract: A method for producing and using an ultrapure colloidal silica dispersion is disclosed. The ultrapure colloidal silica dispersion has less than 200 ppb of each trace metal impurity disposed therein, excluding potassium and sodium, and less than 2 ppm residual alcohol. The method comprises dissolving a fumed silica in an aqueous solvent comprising an alkali metal hydroxide to produce an alkaline silicate solution, removing the alkali metal via ion exchange to generate a silicic acid solution, adjusting temperature, concentration and pH of said silicic acid solution to values sufficient to initiate nucleation and particle growth, and cooling the silicic acid solution at a rate sufficient to produce the colloidal silica dispersion.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: July 15, 2014
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Deepak Mahulikar, Yuhu Wang, Ken A. Delbridge, Gert R. M. Moyaerts, Saeed H. Mohseni, Nichole R. Koontz, Bin Hu, Liqing Wen
  • Publication number: 20140193945
    Abstract: Disclosed herein is an aqueous alkaline etching solution comprising water and an alkaline material being selected from the group consisting of ammonium hydroxide, ammonium phosphate, ammonium carbonate, quaternary ammonium hydroxide, quaternary ammonium phosphate, quaternary ammonium carbonate, an alkali metal hydroxide, an alkaline earth metal hydroxide, or a combination comprising at least one of the foregoing alkaline materials; the aqueous alkaline solution being operative to etch aluminum oxide at a rate greater than or equal to about 2:1 over a rate at which it etches a metal oxide semiconductor to be protected; wherein the aqueous etching solution has a pH of 8 to 13.
    Type: Application
    Filed: December 31, 2012
    Publication date: July 10, 2014
    Inventors: Yuanyuan Li, Kaige Sun, Thomas N. Jackson
  • Publication number: 20140191155
    Abstract: The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.
    Type: Application
    Filed: March 13, 2014
    Publication date: July 10, 2014
    Inventors: Brian REISS, Timothy JOHNS, Michael WHITE, Lamon JONES, John CLARK
  • Patent number: 8771531
    Abstract: A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: July 8, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kenta Furusawa, Shuji Koyama, Hiroyuki Abo, Taichi Yonemoto
  • Patent number: 8771540
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: July 8, 2014
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
  • Publication number: 20140187043
    Abstract: A non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate is polished at a high polishing rate, whereby a smooth surface is obtained. There is provided a polishing agent containing: an oxidant that contains a transition metal and has a redox potential of 0.5 V or more; silica particles that have an average secondary particle size of 0.2 ?m or less; and a dispersion medium, wherein a content ratio of the oxidant is not less than 0.25 mass % nor more than 5 mass %, and a content ratio of the silica particles is not less than 0.01 mass % and less than 20 mass %.
    Type: Application
    Filed: March 5, 2014
    Publication date: July 3, 2014
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Iori YOSHIDA, Satoshi TAKEMIYA, Hiroyuki TOMONAGA
  • Patent number: 8758634
    Abstract: Disclosed is a composition for and applying said method for micro etching of copper or copper alloys during manufacture of printed circuit boards. Said composition comprises a copper salt, a source of halide ions, a buffer system and a benzothiazole compound as an etch refiner. The inventive composition and method is especially useful for manufacture of printed circuit boards having structural features of ?100 ?m.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: June 24, 2014
    Assignee: Atotech Deutschland GmbH
    Inventors: Dirk Tews, Christian Sparing, Martin Thoms
  • Patent number: 8759216
    Abstract: The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: June 24, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventors: Jeffrey Dysard, Sriram Anjur, Timothy Johns, Zhan Chen
  • Publication number: 20140170852
    Abstract: A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.
    Type: Application
    Filed: July 30, 2012
    Publication date: June 19, 2014
    Applicant: BASF SE
    Inventor: Ning Gao
  • Publication number: 20140166613
    Abstract: The present invention relates to compositions which are particularly suitable for the etching and structuring of transparent, conductive antireflection coatings and of corresponding stacked layers, which are preferably present in touch-sensitive display screens or display elements. The latter are generally also known as touch-sensitive displays, touch panels or touch screens. In particular, these are compositions by means of which fine structures can be etched selectively into conductive transparent oxidic layers and into corresponding layer stacks.
    Type: Application
    Filed: June 19, 2012
    Publication date: June 19, 2014
    Applicant: MERCK PATENT GMBH
    Inventors: Oliver Doll, Ingo Koehler, Christian Matuschek, Werner Stockum
  • Patent number: 8753528
    Abstract: The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: June 17, 2014
    Assignees: International Business Machines Corporation, S.O.I.TEC Silicon on Insulator Technologies
    Inventors: Stephen W. Bedell, Keith E. Fogel, Nicolas Daval
  • Patent number: 8747687
    Abstract: An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.
    Type: Grant
    Filed: April 19, 2010
    Date of Patent: June 10, 2014
    Assignee: BASF SE
    Inventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Yuzhuo Li, Mario Brands, Yongqing Lan
  • Patent number: 8747693
    Abstract: A silica having metal ions absorbed thereon and a fabricating method thereof are provided. The silica having metal ions absorbed thereon is a silica having metal ions absorbed thereon and being modified with persulfate salt. The method includes following steps. A solution is provided, and the solution includes silica and persulfate salt therein. The solution is heated to react the silica with the persulfate salt, so as to obtain silica modified with persulfate salt. Metal ion source is added in the solution, the metal ion source dissociates metal ions, and the silica modified with persulfate salt absorbs the metal ions to obtain the silica having metal ions absorbed thereon.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: June 10, 2014
    Assignee: UWIZ Technology Co., Ltd.
    Inventors: Yun-Lung Ho, Song-Yuan Chang, Ming-Hui Lu, Chung-Wei Chiang
  • Publication number: 20140151329
    Abstract: A foam acid glass etching media including a solvent; a source of fluorine; and a nonionic surfactant. The foam acid is in the form of a colloidal dispersion with a gas dispersed in a continuous liquid phase. The media is useful in etching or polishing glass sheets in a batch or continuous process. Described is a method for etching or polishing glass by providing a glass having at least one major surface; and contacting the at least one major surface with a foam acid.
    Type: Application
    Filed: October 28, 2013
    Publication date: June 5, 2014
    Applicant: CORNING INCORPORATED
    Inventors: John Martin Dafin, Todd Michael Harvey, Felipe Miguel Joos, Vasudha Ravichandran, Kevin William Uhlig, Kathleen Ann Wexell, Christine Coulter Wolcott
  • Publication number: 20140154884
    Abstract: The present invention provides an erosion inhibitor for chemical mechanical polishing, which contains compound (a) having a molecular weight of not more than 100,000 and not less than 4 hydroxyl groups, and compound (b) having not less than 4 amino groups, and which has a mass ratio of the compound (a) and the compound (b) (the compound (a)/the compound (b)) of 0.10-500.
    Type: Application
    Filed: May 23, 2012
    Publication date: June 5, 2014
    Applicant: KURARAY CO., LTD.
    Inventors: Mitsuru Kato, Minori Takegoshi, Chihiro Okamoto, Shinya Kato
  • Patent number: 8741008
    Abstract: A chemical mechanical polishing aqueous dispersion includes (A) a graft polymer that includes an anionic functional group in a trunk polymer, and (B) abrasive grains.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: June 3, 2014
    Assignee: JSR Corporation
    Inventors: Masayuki Motonari, Eiichirou Kunitani, Tomikazu Ueno, Takahiro Iijima, Takashi Matsuda
  • Patent number: 8734665
    Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: May 27, 2014
    Assignee: International Business Machines Corporation
    Inventors: Graham M. Bates, Michael T. Brigham, Joseph K. Comeau, Jason P. Ritter, Eva A. Shah, Matthew T. Tiersch, Eric J. White
  • Patent number: 8735293
    Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of ?50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12.
    Type: Grant
    Filed: November 5, 2008
    Date of Patent: May 27, 2014
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Zhendong Liu
  • Publication number: 20140141612
    Abstract: The polishing composition of the present invention contains an oxidizing agent and a scratch-reducing agent represented by general formula (1) or (2) below. In the formulas, X1 and X2 are each independently a hydrogen atom, a hydroxyl group, a carboxyl group, a phosphate group, an alkyl group, an aryl group, an alkyl polyamine group, an alkyl polyphosphate group, an alkyl polycarboxylate group, an alkyl polyaminopolyphosphate group, or an alkyl polyaminopolycarboxylate group.
    Type: Application
    Filed: March 28, 2012
    Publication date: May 22, 2014
    Inventors: Anne Miller, Chiaki Saito, Kanako Fukuda
  • Patent number: 8728341
    Abstract: A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide containing an amino sugar and a derivative of the polysaccharide, and water. The method for polishing a substrate of the invention comprises a step of polishing the silicon oxide film 1 (film to be polished), formed on the silicon substrate 2 having the silicon oxide film 1, by relatively moving the silicon substrate 2 and a polishing platen, in a state that the silicon oxide film 1 is pressed against a polishing pad on the polishing platen, while supplying the polishing agent of the invention between the silicon oxide film 1 and the polishing pad.
    Type: Grant
    Filed: September 14, 2010
    Date of Patent: May 20, 2014
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Daisuke Ryuzaki, Takenori Narita, Yousuke Hoshi, Tomohiro Iwano
  • Publication number: 20140131615
    Abstract: The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.
    Type: Application
    Filed: June 28, 2012
    Publication date: May 15, 2014
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Satoshi Tamai, Kunio Yube, Satoshi Okabe
  • Publication number: 20140134778
    Abstract: An aqueous alkaline composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03)nXn+(I), R—P032-(Xn+)3-n(II); (RO—S03-)nXn+(III), RO—P032-(Xn+)3-n (IV), and [(RO)2P02-]nXn+(V); wherein the n=1 or 2; X is hydrogen, ammonium, or alkaline or alkaline-earth metal; the variable R1 is an olefmically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; and (C) a buffer system, wherein at least one component other than water is volatile; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.
    Type: Application
    Filed: July 12, 2012
    Publication date: May 15, 2014
    Applicant: BASF SE
    Inventor: Berthold Ferstl
  • Patent number: 8721917
    Abstract: Improved slurry compositions comprising a mixture of a first type of particles and a second type of abrasive particles dispersed within an aqueous medium, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes, particularly abrasive slurry compositions for polishing of sapphire. These abrasive slurry compositions comprise a mixture of a first type of abrasive particles having a hardness that is harder than the surface being polished and a second type of abrasive particles have a hardness that is softer than the surface being polished, particularly mixtures of silicon carbide abrasive particles and silica abrasive particles, dispersed within an aqueous medium.
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: May 13, 2014
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Isaac K. Cherian, Abhaya K. Bakshi
  • Patent number: 8721909
    Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: May 13, 2014
    Assignee: Fujimi Incorporated
    Inventor: Yasuhide Uemura
  • Publication number: 20140127907
    Abstract: Methods of forming a semiconductor device structure and sulfur dioxide etch chemistries. The methods and chemistries, which may be plasma chemistries, include use of sulfur dioxide and a halogen-based compound to form a trimmed pattern of a patterning material, such as a resist material, at a critical dimension with low feature width roughness, with low space width roughness, without excessive height loss, and without substantial irregularities in the elevational profile, as compared to trimmed features formed using conventional chemistries and trimming methods.
    Type: Application
    Filed: November 8, 2012
    Publication date: May 8, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventor: Guangjun Yang