Responsive To Non-electrical External Signal (e.g., Imager) Patents (Class 257/222)
  • Patent number: 8338868
    Abstract: An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: December 25, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Bong Ki Mheen, Albert J. P. Theuwissen, Jae Sik Sim, Mi Ran Park, Yong Hwan Kwon, Eun Soo Nam
  • Publication number: 20120299066
    Abstract: In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
    Type: Application
    Filed: May 16, 2012
    Publication date: November 29, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Aiko Kato, Kouhei Hashimoto, Seiichi Tamura
  • Patent number: 8313977
    Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a semiconductor substrate, an interconnection and an interlayer dielectric, a lower electrode layer, an image sensing device, a first via hole, a barrier pattern, a second via hole, and a metal contact. The semiconductor substrate comprises a readout circuitry. The interconnection and the interlayer dielectric are formed on the semiconductor substrate. The lower electrode layer is disposed over the interlayer dielectric. The image sensing device is disposed on the lower electrode layer. The first via hole is formed through the image sensing device. The barrier pattern is formed on a sidewall of the first via hole. The second via hole is formed through the lower electrode layer and the interlayer dielectric under the first via hole. The metal contact is formed in the first and second via holes.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: November 20, 2012
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Tae Gyu Kim
  • Patent number: 8310003
    Abstract: A charge accumulation region of a first conductivity type is buried in a semiconductor substrate. A charge transfer destination diffusion layer of the first conductivity type is formed on a surface of the semiconductor substrate. A transfer gate electrode is formed on the charge accumulation region, and charge is transferred from the charge accumulation region to the charge transfer destination diffusion layer.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: November 13, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yusuke Kohyama
  • Publication number: 20120273654
    Abstract: The present invention provides a junction gate photo-diode (JGP) pixel that includes a JGP accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also includes is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also includes is a pinned barrier (PB) and a storage gate (SG) positioned on the substrate between the JGP and the FD. The PB temporarily blocks charge transfer between the JGP and the FD, and the SG stores the accumulated charge from the JGP, and transfers the stored charge to the FD for readout.
    Type: Application
    Filed: August 16, 2011
    Publication date: November 1, 2012
    Applicant: APTINA IMAGING CORPORATION
    Inventors: Jaroslav Hynecek, Hirofumi Komori
  • Publication number: 20120273653
    Abstract: The present invention relates to a junction gate photo-diode (JGP) pixel that includes a JGP for accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also included is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also included is a pinned barrier (PB) positioned on the substrate between the JGP and the FD, the PB temporarily blocks charge transfer between the JGP and the FD. The accumulated charge is transferred from the JGP to FD by applying a control voltage to the JGP control terminal.
    Type: Application
    Filed: August 16, 2011
    Publication date: November 1, 2012
    Applicant: APTINA IMAGING CORPORATION
    Inventors: Jaroslav HYNECEK, Hirofumi Komori, Xia Zhao
  • Patent number: 8299504
    Abstract: A two-dimensional, temporally modulated electromagnetic wavefield, preferably in the ultraviolet, visible or infrared spectral range, can be locally detected and demodulated with one or more sensing elements. Each sensing element consists of a resistive, transparent electrode (E) on top of an insulated layer (O) that is produced over a semiconducting substrate whose surface is electrically kept in depletion. The electrode (E) is connected with two or more contacts (C1; C2) to a number of clock voltages that are operated synchronously with the frequency of the modulated wavefield. In the electrode and in the semiconducting substrate lateral electric fields are created that separate and transport photogenerated charge pairs in the semiconductor to respective diffusions (D1; D2) close to the contacts (C1; C2).
    Type: Grant
    Filed: January 19, 2009
    Date of Patent: October 30, 2012
    Assignee: MESA Imaging AG
    Inventor: Peter Seitz
  • Patent number: 8299468
    Abstract: A three mask process for forming an LCD substrate includes, depositing in sequence on a base substrate a gate metallic layer, a gate insulation layer and a channel layer. A first photoresist pattern is used to form a gate electrode of a switching device, a channel pattern and a gate line on the gate electrode. A transparent conductive layer and a source metallic layer are deposited in sequence on the base substrate having the channel pattern. A source electrode and a drain electrode of the switching device, a pixel electrode and a source line electronically connected to the drain electrode, are formed by a second photoresist pattern. A first protective insulation layer is formed, and the first protective insulation layer on the pixel electrode is removed by a third photoresist pattern. Therefore, by the three masks process yields a simplified manufacturing process in which the lower portion of the source metallic pattern is not formed and display quality is improved.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: October 30, 2012
    Assignee: Samsung Display Co., Ltd.
    Inventor: Eun-Guk Lee
  • Publication number: 20120248505
    Abstract: A light receiving device comprises a photoelectric conversion element formed on a first-conductivity-type semiconductor substrate, and further comprises a plurality of photoelectron distributors formed on the first-conductivity-type semiconductor substrate. The photoelectron distributor has a first transfer unit for transferring photoelectrons generated in the photoelectric conversion element, a photoelectron hold unit for temporarily holding the photoelectrons generated in the photoelectric conversion element, a second transfer unit for transferring the photoelectrons held in the photoelectron hold unit, and a floating diffusion layer for storing the transferred photoelectrons and converting the photoelectrons to a voltage.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 4, 2012
    Applicant: HONDA MOTOR CO., LTD.
    Inventor: Tomoyuki KAMIYAMA
  • Patent number: 8253700
    Abstract: An exemplary touch panel includes a flexible substrate, a transparent conductive layer, and four electrodes. The flexible substrate includes a surface. The transparent conductive layer is disposed on the surface of the substrate. The transparent conductive layer includes a carbon nanotube layer. The carbon nanotube layer includes carbon nanotubes. The electrodes are separately disposed, and electrically connected with the transparent conductive layer. A display device using the above-described touch panel is also provided.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: August 28, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Liang Liu, Shou-Shan Fan
  • Patent number: 8253175
    Abstract: A sealed semiconductor device having reduced delamination of the sealing layer in high temperature, high humidity conditions is disclosed. The semiconductor device includes a substrate and a stack of device layers on the substrate sealed with a sealing layer. The upper surface of a street area of the substrate is oxidized so that the oxidized region extends under the sealing layer. The presence of the oxidized region of the upper surface of the substrate helps reduce the delamination, because the oxidized surface does not react with water to the same extent as a non-oxidized surface. The semiconductor devices remain sealed after dicing through the street area because the oxidized surface does not delaminate.
    Type: Grant
    Filed: January 18, 2010
    Date of Patent: August 28, 2012
    Inventors: Zhong Pan, Craig Ciesla
  • Patent number: 8248380
    Abstract: A touch panel includes a first electrode plate and a second electrode plate. The first electrode plate includes a first substrate, and a first conductive layer disposed on a lower surface of the first substrate. The second electrode plate includes a second substrate, a second conductive layer disposed on an upper surface of the second substrate, two first-electrodes, and two second-electrodes. The two first-electrodes and the two second-electrodes are electrically connected to the second conductive layer. At least one of the first conductive layer and the second conductive layer includes a carbon nanotube layer. Each carbon nanotube layer includes a plurality of carbon nanotubes. Further, the present invention also relates to a display device. The display device includes a displaying unit and a touch panel.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: August 21, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Liang Liu, Shou-Shan Fan
  • Patent number: 8248377
    Abstract: A touch panel includes a first electrode plate, a second electrode plate separated from the first electrode plate. The first electrode plate includes a first substrate and a first conductive layer disposed on a lower surface of the first substrate. The second electrode plate includes a second substrate and a second conductive layer disposed on an upper surface of the second substrate. The first conductive layer and the second conductive layer include a carbon nanotube film respectively.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: August 21, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Shou-Shan Fan, Ga-Lane Chen
  • Patent number: 8247848
    Abstract: An n-type region as a charge storage region of a photodiode is buried in a substrate. The interface between silicon and a silicon oxide film is covered with a high concentration p-layer and a lower concentration p-layer is formed only in the portion immediately below a floating electrode for signal extraction. Electrons generated by light are stored in the charge storage region, thereby changing the potential of the portion of the p-layer at the surface of the semiconductor region. The change is transmitted through a thin insulating film to the floating electrode by capacitive coupling and read out by a buffer transistor. Initialization of charges is executed by adding a positive high voltage to the gate electrode of a first transfer transistor such that the electrons stored in the charge storage region are transferred to the n+ region and generation of reset noise is protected.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: August 21, 2012
    Assignee: National University Corporation Shizuoka University
    Inventor: Shoji Kawahito
  • Patent number: 8247847
    Abstract: A solid-state imaging device including a first transfer electrode portion and a second transfer electrode portion having a pattern area ratio higher than that of the first transfer electrode portion. The first transfer electrode portion includes a plurality of first transfer electrodes having a single-layer structure of metal material. The second transfer electrode portion includes a plurality of second transfer electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon.
    Type: Grant
    Filed: November 4, 2009
    Date of Patent: August 21, 2012
    Assignee: Sony Corporation
    Inventors: Kaori Takimoto, Masayuki Okada, Takeshi Takeda
  • Patent number: 8247853
    Abstract: A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions of the second conductivity type are formed to different depths in the semi-conductive layer. The multiple doping regions of the first conductivity type are disposed between the multiple doping regions of the second conductivity type and form multiple junction capacitances without full depletion. In particular, the stratified doping arrangement allows the photodiode to have a small size, high charge storage capacity, low dark current, and low operation voltages.
    Type: Grant
    Filed: October 29, 2009
    Date of Patent: August 21, 2012
    Assignee: Intellectual Ventures II LLC
    Inventor: Jaroslav Hynecek
  • Publication number: 20120199882
    Abstract: Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.
    Type: Application
    Filed: February 7, 2012
    Publication date: August 9, 2012
    Inventor: Jong-Cheol Shin
  • Patent number: 8237671
    Abstract: A touch panel includes a substrate, a transparent conductive layer, and at least two electrodes. The transparent conductive layer is formed on a surface of the substrate. The transparent conductive layer includes at least two carbon nanotube layers, and each carbon nanotube layer includes a plurality of carbon nanotubes arranged along a same direction. The carbon nanotubes of adjacent carbon nanotube layers are arranged along different directions. The electrodes are electrically connected with the transparent conductive layer. Further, a display device using the touch panel is also included.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: August 7, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Liang Liu, Shou-Shan Fan
  • Patent number: 8237677
    Abstract: A liquid crystal display screen includes an upper component, a bottom component and a liquid crystal layer. The upper component includes a touch panel. The touch panel includes a first conductive layer. The conductive layer includes a transparent carbon nanotube structure, and the transparent carbon nanotube structure includes a plurality of metallic carbon nanotubes. The bottom component includes a thin film transistor panel. The liquid crystal layer is located between the upper component and the lower component.
    Type: Grant
    Filed: July 2, 2009
    Date of Patent: August 7, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Liang Liu, Shou-Shan Fan, Ga-Lane Chen, Jia-Shyong Cheng, Jeah-Sheng Wu
  • Patent number: 8237680
    Abstract: A touch panel includes a first electrode plate and a second electrode plate connected to the first electrode plated. The first electrode plate includes a first substrate, and a first conductive layer disposed on the first substrate. The second electrode includes a second substrate, and a second conductive layer disposed on the second substrate. The first or the second conductive layer includes at least one carbon nanotube composite layer.
    Type: Grant
    Filed: August 13, 2009
    Date of Patent: August 7, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Liang Liu, Shou-Shan Fan, Ga-Lane Chen, Jia-Shyong Cheng, Jeah-Sheng Wu
  • Patent number: 8237670
    Abstract: A touch panel includes a first electrode plate and a second electrode plate. The first electrode plate includes a first substrate, a first conductive layer disposed on a lower surface of the first substrate, and two first-electrodes disposed on opposite ends of the first conductive layer. The second electrode plate separates from the first electrode plate and includes a second substrate, a second conductive layer disposed on an upper surface of the second substrate, and two second-electrodes disposed on opposite ends of the second conductive layer. At least one of the first-electrodes and the second-electrodes includes a carbon nanotube layer. Further, the present invention also relates to a display device. The display device includes a displaying unit and a touch panel.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: August 7, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Liang Liu, Shou-Shan Fan
  • Patent number: 8237679
    Abstract: A liquid crystal display screen includes an upper component, a bottom component and a liquid crystal layer. The upper component includes a touch panel. The touch panel includes a first conductive layer. The first conductive layer includes a transparent carbon nanotube structure. The bottom component includes a thin film transistor panel. The thin film transistor panel includes a plurality of thin film transistors. Each of the plurality of thin film transistors includes a semiconducting layer, and the semiconducting layer includes a semiconducting carbon nanotube structure. The liquid crystal layer is located between the upper component and the lower component.
    Type: Grant
    Filed: August 13, 2009
    Date of Patent: August 7, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Liang Liu, Shou-Shan Fan, Ga-Lane Chen, Jia-Shyong Cheng, Jeah-Sheng Wu
  • Patent number: 8237673
    Abstract: A touch panel includes a first electrode plate and a second electrode plate. The first electrode plate includes a first substrate, and a first conductive layer disposed on a lower surface of the first substrate. The second electrode plate includes a second substrate, and a second conductive layer disposed on an upper surface of the second substrate. The first conductive layer and the second conductive layer both include a carbon nanotube layer. Each carbon nanotube layer includes a plurality of carbon nanotubes. The first substrate and the second substrate are flexible. Further, the present invention also relates to a display device. The display device includes a displaying unit and a touch panel.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: August 7, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Liang Liu, Shou-Shan Fan
  • Patent number: 8237672
    Abstract: An exemplary touch panel includes a substrate, transparent conductive layers, a capacitive sensing circuit, and conductive wires. The transparent conductive layers are disposed on a surface of the substrate and spaced apart from each other. Each transparent conductive layer includes a carbon nanotube layer. The carbon nanotube layer includes carbon nanotubes. The conductive wires respectively electrically connect the transparent conductive layers to the capacitive sensing circuit. A display device using the touch panel is also provided.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: August 7, 2012
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Kai-Li Jiang, Liang Liu, Shou-Shan Fan
  • Publication number: 20120181581
    Abstract: Image sensor arrays may include bulk-charge-modulated-device (BCMD) sensor pixels. The BCMD sensor pixels may be used in back-side-illuminated (BSI) image sensors. A BCMD sensor pixel need not include a dedicated addressing transistor. The BCMD sensor pixel may include a gated drain reset (GDR) structure that is used to perform reset operations. The GDR structure may be shared among multiple pixels, which provides increased charge storage capacity for high resolution image sensors. A negative back body bias may be applied to the BCMD pixel array, allowing the depletion region under each BCMD pixel to extend all the way to the back silicon surface. Extending the depletion region by negatively biasing the back silicon surface may serve to minimize pixel crosstalk.
    Type: Application
    Filed: January 18, 2011
    Publication date: July 19, 2012
    Inventor: Jaroslav Hynecek
  • Patent number: 8188474
    Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 ?m to 200 ?m inclusive. Further, an electronic device using the flexible light-emitting device is provided.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: May 29, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kaoru Hatano, Satoshi Seo, Takaaki Nagata, Tatsuya Okano
  • Publication number: 20120128017
    Abstract: An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V; or having a stoichiometry of 2:1:1 and an element combination selected from the set of I-II-IV. In some embodiments, the charge carrier transport layer is used as the radiation absorption layer for a photovoltaic cell, or a light emitting layer of a light emitting device. Other devices, such as laser diode, a photodetection device, an optical modulator, a transparent electrode and a window layer, can also be formed using the ternary semiconducting compound as the charge carrier transport.
    Type: Application
    Filed: November 17, 2011
    Publication date: May 24, 2012
    Applicant: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Claudia Felser, Shoucheng Zhang, Xiao Zhang
  • Publication number: 20120119264
    Abstract: A basic device for an image sensor includes a photodiode consisting of a doped area having a first type of conductivity and formed at the surface of a semiconductor substrate having a second type of conductivity, adapted to be biased at a first reference voltage, wherein the photodiode is combined with a device for the transfer, multiplication and insulation of charges, the photodiode being a fully depleted one and including, at the surface of the doped area having a first type of conductivity, a strongly doped region having the second type of conductivity and adapted to be biased at a second reference voltage.
    Type: Application
    Filed: May 11, 2010
    Publication date: May 17, 2012
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIE ALTERNATIVES
    Inventors: Yvon Cazaux, Benoít Giffard
  • Publication number: 20120112247
    Abstract: A basic device for an image sensor includes a photogeneration and charge-collecting region formed at the surface of a semiconductor substrate having a first type of conductivity, adapted to be biased at a reference voltage, the photogeneration region being associated with a device for the transfer, multiplication, and insulation of charges. The photogeneration region has an insulated gate mounted thereon, which is adapted to be alternately biased at a first voltage and at a second voltage, the insulated gate being made of a low-absorption material.
    Type: Application
    Filed: May 11, 2010
    Publication date: May 10, 2012
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Yvon Cazaux, Benoît Giffard
  • Publication number: 20120097859
    Abstract: The invention relates to an operating method for a semiconductor structure (1), particularly for a detecting element, in a semiconductor detector, particularly in a blocked impurity band detector, comprising the following steps: a) generating free signal charge carriers (2) in the semiconductor detector by impinging radiation, b) collecting the radiation-generated signal charge carriers (2) in a storage area (IG) in the semiconductor structure (1), wherein the storage area (IG) forms a potential well in which the signal charge carriers (2) are captured, c) deleting the signal charge carriers (2) collected in the storage area (IG) in IG that the signal charge carriers (2) are removed from the storage area (IG), d) generating an electric tunnel field in the area of the storage area (IG), so that the signal charge carriers (2) present in the storage area (IG) can tunnel out of the potential well of the storage area (IG) using the tunnel effect, into a conduction band in which the signal charge carriers (2) are f
    Type: Application
    Filed: May 12, 2010
    Publication date: April 26, 2012
    Applicant: Max-Planck-Gesellschaft zur Foerderung der Wissens chaften e.V.
    Inventors: Gerhard Lutz, Lothar Strueder, Valentin Fedl
  • Publication number: 20120098040
    Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.
    Type: Application
    Filed: December 22, 2011
    Publication date: April 26, 2012
    Applicant: Panasonic Corporation
    Inventors: Mitsuyoshi MORI, Takumi YAMAGUCHI, Takahiko MURATA
  • Patent number: 8154098
    Abstract: A reverse image sensor module includes first and second semiconductor chips, and first and second insulation layers. The first semiconductor chip includes a first semiconductor chip body having a first surface and a second surface facing away from the first surface, photodiodes disposed on the first surface, and a wiring layer disposed on the second surface and having wiring lines electrically connected to the photodiodes and bonding pads electrically connected to the wiring lines. The second semiconductor chip includes a second semiconductor chip body having a third surface facing the wiring layer, and through-electrodes electrically connected to the bonding pads and passing through the second semiconductor chip body. The first insulation layer is disposed on the wiring layer, and the second insulation layer is disposed on the third surface of the second semiconductor chip body facing the first insulation layer and is joined to the first insulation layer.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: April 10, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventor: Seung Taek Yang
  • Patent number: 8154057
    Abstract: A solid-state imaging device includes: a photoelectric converting section comprising a photo-diode; a charge storage section; a charge transfer section; a first control gate section provided between the photoelectric converting section and the charge storage section to control transfer of a signal charge from the photoelectric converting section to the charge storage section; and a second control gate section provided between the charge storage section and the charge transfer section to control transfer of the signal charge from the charge storage section to the charge transfer section. The charge storage section includes: a first region formed on a side near to the first control gate section; and a second region formed on a side near to the second control gate section and configured to have a channel potential increased more than that of the first region. The second region is configured to hold the signal charge in a pinning condition.
    Type: Grant
    Filed: February 9, 2011
    Date of Patent: April 10, 2012
    Assignee: Renesas Electronics Corporation
    Inventor: Ryoichi Goto
  • Patent number: 8138528
    Abstract: A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: March 20, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tesunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
  • Patent number: 8129760
    Abstract: A structure which meets a high-quality reading requirement and realizes high-speed color reading when the reading section of a color image forming apparatus adopts a color contact image sensor using CCDs as reading element arrays is disclosed. The image sensor of a color image reading section uses a color contact image sensor in which a plurality of CCDs are aligned as reading element arrays in the main scanning direction. In this case, each CCD has one analog shift register for RGB time-division reading, and three R, G, and B reading apertures arranged parallel to each other at a pitch corresponding to the reading resolution. The pixel pitch in the main scanning direction is constant.
    Type: Grant
    Filed: August 12, 2008
    Date of Patent: March 6, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kenji Hiromatsu
  • Patent number: 8115242
    Abstract: A multicolor CMOS pixel sensor formed in a p-type semiconductor region includes a first detector formed from an n-type region of semiconductor material located near the surface of the p-type region. A first pinned p-type region is formed at the surface of the p-type region over the first detector, and has a surface portion extending past an edge of the pinned p-type region. A second detector is formed from an n-type region located in the p-type semiconductor region below the first detector. A second-detector n-type deep contact plug is in contact with the second detector and extends to the surface of the p-type semiconductor region. A second pinned p-type region is formed at the surface of the p-type semiconductor region over the top of the second-detector n-type deep contact plug. A surface portion of the second-detector deep contact plug extends past an edge of the second pinned p-type region.
    Type: Grant
    Filed: February 7, 2007
    Date of Patent: February 14, 2012
    Assignee: Foveon, Inc.
    Inventor: Richard B. Merrill
  • Publication number: 20120018618
    Abstract: Imaging device comprising at least one photosite comprising a charge storage semiconductor zone, a charge collection semiconductor zone and transfer means designed to permit charge transfer between the charge storage zone and the charge collection zone, characterized in that the charge storage semiconductor zone comprises a lower semiconductor zone and a conduction channel buried beneath the upper surface of the photosite and connecting said lower semiconductor zone to the charge collection zone.
    Type: Application
    Filed: July 15, 2011
    Publication date: January 26, 2012
    Applicant: STMicroelectronics (Crolles2) SAS
    Inventor: François Roy
  • Publication number: 20120012898
    Abstract: A solid state imaging device includes: a semiconductor substrate having photoelectric conversion regions arranged in matrix, charge transfer regions, and element-separating regions; an insulating film on the semiconductor substrate; transfer electrodes provided in one-to-one with the photoelectric conversion regions and disposed on the insulating film at locations corresponding to the charge transfer regions; and wiring portions each connecting transfer electrodes adjacent in a row direction. The charge transfer regions are doped with impurities so that, in any charge transfer region, a potential of each portion corresponding to an upstream edge of a transfer electrode in the charge transfer direction is lower than the potential of the remaining portions. Each wiring portion connects into a respective transfer electrode at a location offset downstream from the upstream edge of the transfer electrode in the charge transfer direction.
    Type: Application
    Filed: July 13, 2011
    Publication date: January 19, 2012
    Inventor: Masatoshi IWAMOTO
  • Patent number: 8097890
    Abstract: An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: January 17, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: WeiDong Qian, Hsin-Chih Tai, Vincent Venezia, Howard E. Rhodes
  • Publication number: 20120001234
    Abstract: An image sensor includes first impurity regions formed in a substrate, second impurity regions formed in the first impurity regions, wherein the second impurity regions has a junction with the first impurity regions, recess patterns formed over the first impurity regions in contact with the second impurity regions, and transfer gates filling the recess patterns.
    Type: Application
    Filed: November 2, 2010
    Publication date: January 5, 2012
    Inventors: Sung-Won LIM, Jin-Woong Kim, Hyo-Seok Lee
  • Patent number: 8076741
    Abstract: A photo sensing element array substrate is provided. The photo sensing element array substrate includes a flexible substrate and a plurality of photo sensing elements. The photo sensing elements are disposed in array on the flexible substrate. Each of the photo sensing elements includes a photo sensing thin film transistor (TFT), an oxide semiconductor TFT and a capacitor. The photo sensing TFT is disposed on the flexible substrate. The oxide semiconductor TFT is disposed on the flexible substrate. The oxide semiconductor TFT is electrically connected to the photo sensing TFT. The capacitor is disposed on the flexible substrate and electrically connected between the photo sensing TFT and the oxide semiconductor TFT. When the photo sensing element array substrate is bent, it remains unaffected from normal operation.
    Type: Grant
    Filed: April 22, 2009
    Date of Patent: December 13, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chih-Ming Lai, Yung-Hui Yeh
  • Patent number: 8071417
    Abstract: An image sensor is provided. The image sensor comprises a semiconductor substrate, a dielectric interlayer, an interconnection, an image sensing unit, a via hole piercing the image sensing unit and the dielectric layer, and a bottom electrode. The semiconductor substrate includes a readout circuit. The dielectric interlayer is disposed on the semiconductor substrate. The interconnection is disposed in the dielectric interlayer and connected electrically to the readout circuit. The image sensing unit is disposed on the dielectric interlayer and includes a stack of a first impurity region and a second impurity region. The via hole pierces the image sensing unit and the dielectric interlayer to expose the interconnection. The bottom electrode is disposed in the via hole to electrically connect the interconnection and the first impurity region of the image sensing unit.
    Type: Grant
    Filed: July 22, 2009
    Date of Patent: December 6, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Tae Gyu Kim
  • Patent number: 8072040
    Abstract: An image pickup apparatus includes light receiving areas arranged two-dimensionally. A vertical scanning circuit comprises unit circuit stages arranged in the vertical direction and a horizontal scanning circuit comprises unit circuit stages arranged in the horizontal direction, for selecting and reading light receiving areas in succession. The vertical and horizontal scanning circuits are arranged in spaces between the light receiving areas. Two or more unit circuit stages of the vertical scanning circuit are provided in a first space between the light receiving areas. Two or more unit circuit stages of the horizontal scanning circuit are provided in a second space between the light receiving areas. Two or more unit circuit stages of a scanning circuit are provided in a third space between the light receiving areas, the third space being provided in a space between the light receiving areas at a crossing area of the vertical and horizontal scanning circuits.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: December 6, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tomoyuki Noda
  • Publication number: 20110272746
    Abstract: The present invention provides a solid state imaging device and a manufacturing method thereof that lowers contact resistance and suppresses dark current, even when wirings and contact plugs are reduced in size. A solid state imaging device 1 includes wirings 24 and a transfer electrode film 102 that are connected to each other by lower contact plugs A in one layer and upper contact plugs B in another layer. A titanium silicide film 105 is formed at a bottom of each lower contact plug A. The upper contact plugs B do not include any titanium silicide, and are connected to the lower contact plugs A via a tungsten film 107 that is an intermediate wiring layer. Neither of the upper and lower contact plugs A and B includes pure titanium. Intralayer lens films 127 above photodiodes 121 in an imaging pixel region are formed after the lower contact plugs A are formed.
    Type: Application
    Filed: January 19, 2011
    Publication date: November 10, 2011
    Inventor: Noriaki SUZUKI
  • Patent number: 8053868
    Abstract: Provided are a wafer level chip scale package of an image sensor and a manufacturing method thereof. The wafer level chip scale package includes: a wafer including an image sensor and a pad on the top surface thereof and inclined surfaces on both ends thereof; expansion pads formed on the inclined surfaces of the wafer, including the pad, such that the expansion pads are electrically connected to the pad, a bottom surface of the expansion pads being on a straight line with respect to that of the wafer; a support formed on the expansion pads to support both bottom surfaces of a glass, the support having a height to provide a space where an air cavity is formed; and a glass disposed on the support to provide the air cavity over the wafer.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: November 8, 2011
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jin Mun Ryu, Jung Jin Kim, Hyung Kyu Park
  • Patent number: 8053815
    Abstract: Disclosed herein is a solid-state image pickup device including, a plurality of light receiving units, a transfer channel, a first transfer electrode, a second transfer electrode, first wiring, and second wiring.
    Type: Grant
    Filed: August 25, 2008
    Date of Patent: November 8, 2011
    Assignee: Sony Corporation
    Inventor: Takeshi Takeda
  • Patent number: 8049803
    Abstract: A solid state image pickup device includes: a semiconductor substrate; a well formed in a surface layer of the semiconductor substrate; a light reception region formed in the well and including a plurality of charge accumulation regions formed in a matrix shape and a plurality of vertical CCDs formed along each column of the charge accumulation regions; a horizontal CCD formed in the well and coupled to ends of the vertical CCDs; a peripheral circuit formed in the well in partial regions of the light reception region and the horizontal CCD; a shield layer formed on the semiconductor substrate including a partial area above the peripheral circuit, made of conductive material and surrounding the light reception region, the shield layer being electrically connected to the semiconductor substrate; a support disposed above the shield layer and made of conductive material; and a translucent member placed on the support.
    Type: Grant
    Filed: July 10, 2006
    Date of Patent: November 1, 2011
    Assignee: FUJIFILM Corporation
    Inventor: Jin Murayama
  • Patent number: 8044478
    Abstract: Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate. An interlayer dielectric is formed on the first substrate, and comprises a lower line therein. A crystalline semiconductor layer is bonded to the interlayer dielectric. A photodiode can be formed in the crystalline semiconductor layer, and comprises a first impurity region and a second impurity region. A via hole can be formed passing through the crystalline semiconductor layer and the interlayer dielectric to expose the lower line. A plug is formed inside the first via hole to connect with only the lower line and the first impurity region. A device isolation region can be formed in the crystalline semiconductor layer to separate the photodiode according to unit pixel.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: October 25, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Joon Hwang
  • Publication number: 20110255071
    Abstract: The photonic mixer comprises a couple of an injecting contact region (3,4) for injecting the majority carrier current into the semiconductor substrate (1) and a detector region (7,8) for collecting the photocurrent. The injecting contact region (3,4) is doped with a dopant of the first conductivity type (p+) at a higher dopant concentration than the semiconductor substrate (1). The detector region (7,8) is doped with a dopant of a second conductivity type (n+) opposite the first conductivity type and has a junction (11,12) with the semiconductor substrate (1), a zone of the semiconductor substrate (1) around said junction (11,12) being a depleted substrate zone (101, 102).
    Type: Application
    Filed: October 14, 2010
    Publication date: October 20, 2011
    Inventors: Ward VAN DER TEMPEL, Daniel VAN NIEUWENHOVE, Maarten KUIJK
  • Publication number: 20110249163
    Abstract: A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
    Type: Application
    Filed: January 20, 2010
    Publication date: October 13, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hajime Ikeda, Yoshihisa Kabaya, Takanori Watanabe, Takeshi Ichikawa, Mineo Shimotsusa