Junction Field Effect Transistor In Integrated Circuit Patents (Class 257/272)
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Patent number: 7525136Abstract: A junction field effect transistor comprises a semiconductor substrate. A source region of a first conductivity type is formed in the substrate. A drain region of the first conductivity type is formed in the substrate. A channel region of the first conductivity type is formed in the substrate. A gate region of a second conductivity type is formed in the substrate between the source and drain regions. A first virtual link region is formed in the substrate between the gate region and either the source region or the drain region. A dielectric material overlays the first virtual link region. A first electrode region overlays the dielectric material.Type: GrantFiled: May 3, 2007Date of Patent: April 28, 2009Assignee: DSM Solutions, Inc.Inventors: Samar K. Saha, Ashok K. Kapoor
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Patent number: 7491987Abstract: Example embodiments are directed to a junction field effect thin film transistor (JFETFT) including a first electrode formed on a substrate, a first conductive first gate semiconductor pattern formed on the first gate electrode, a second conductive semiconductor channel layer formed on the substrate and the first conductive first gate semiconductor pattern, and source and drain electrodes formed on the second conductive semiconductor pattern and located at both sides of the first conductive gate semiconductor pattern. The JFETFT may further include a first conductive second gate semiconductor pattern formed on a portion of the second conductive semiconductor channel layer between the source electrode and the drain electrode, and a second gate electrode formed on the first conductive second gate semiconductor pattern.Type: GrantFiled: February 12, 2007Date of Patent: February 17, 2009Assignee: Samsung Electronics Co., LtdInventors: Stefanovich Genrikh, Choong-Rae Cho, Eun-Hong Lee
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Publication number: 20090039398Abstract: An n type impurity region is continuously formed on the bottom portion of a channel region below a source region, a gate region and a drain region. The n type impurity region has an impurity concentration higher than the channel region and a back gate region, and is less influenced by the diffusion of p type impurities from the gate region and the back gate region. Moreover, by continuously forming the impurity region from a portion below the source region to a portion below the drain region, the resistance value of a current path in the impurity region is substantially uniformed. Therefore, the IDSS is stabilized, the forward transfer admittance gm and the voltage gain Gv are improved, and the noise voltage Vno is decreased. Furthermore, the IDSS variation within a single wafer is suppressed.Type: ApplicationFiled: August 5, 2008Publication date: February 12, 2009Applicants: SANYO Electric Co., Ltd., SANYO Semiconductor Co., Ltd.Inventors: Mitsuo Hatamoto, Yoshiaki Matsumiya
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Patent number: 7485905Abstract: An electrostatic discharge protection device comprising a multi-finger gate, a first lightly doped region of a second conductivity, a first heavily doped region of the second conductivity, and a second lightly doped region of the second conductivity. The multi-finger gate comprises a plurality of fingers mutually connected in parallel over an active region of a first conductivity. The first lightly doped region of a second conductivity is disposed in the semiconductor substrate and between two of the fingers. The first heavily doped region of the second conductivity is disposed in the first lightly doped region of the second conductivity. The second lightly doped region of the second conductivity is beneath and adjoins the first lightly doped region of the second conductivity.Type: GrantFiled: July 25, 2006Date of Patent: February 3, 2009Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Feng-Chi Hung, Jian-Hsing Lee, Hung-Lin Chen, Deng-Shun Chang
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Publication number: 20090026506Abstract: In the semiconductor device, a gate region is formed in a mesh pattern having first polygonal shapes and second polygonal shapes the area of which is smaller than that of the first polygonal shapes, and drain regions and source regions are disposed within the first polygonal shapes and the second polygonal shapes, respectively. With this configuration, the forward transfer admittance gm can be increased as compared with a structure in which gate regions are disposed in a stripe pattern. Furthermore, compared with a case in which a gate region is disposed in a grid pattern, deterioration in forward transfer characteristics (amplification characteristics) due to an increase in input capacitance Ciss can be minimized while a predetermined withstand voltage is maintained.Type: ApplicationFiled: June 25, 2008Publication date: January 29, 2009Applicants: SANYO Electric Co., Ltd., SANYO Semiconductor Co., Ltd.Inventors: Yoshiaki MATSUMIYA, Mitsuo HATAMOTO
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Patent number: 7479672Abstract: A semiconductor vertical junction field effect power transistor formed by a semiconductor structure having top and bottom surfaces and including a plurality of semiconductor layers with predetermined doping concentrations and thicknesses and comprising at least a bottom layer as drain layer, a middle layer as blocking and channel layer, a top layer as source layer. A plurality of laterally spaced U-shaped trenches with highly vertical side walls defines a plurality of laterally spaced mesas. The mesas are surrounded on the four sides by U-shaped semiconductor regions having conductivity type opposite to that of the mesas forming U-shaped pn junctions and defining a plurality of laterally spaced long and vertical channels with a highly uniform channel opening dimension. A source contact is formed on the top source layer and a drain contact is formed on the bottom drain layer.Type: GrantFiled: April 9, 2007Date of Patent: January 20, 2009Assignee: Rutgers, The State UniversityInventor: Jian H. Zhao
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Publication number: 20080285322Abstract: A semiconductor memory device including a dynamic random access memory (DRAM) cell and a ternary content addressable memory (TCAM) cell is disclosed. The DRAM cell may include a data storing portion and a data read portion. The data storing portion and data read portion comprising p-channel junction field effect transistors. The TCAM cell including an x-cell, y-cell, and comparator circuit. The x-cell, y-cell, and comparator circuits comprising p-channel JFETs.Type: ApplicationFiled: May 17, 2007Publication date: November 20, 2008Inventor: Damodar R. Thummalapally
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Patent number: 7453107Abstract: A semiconductor device includes a substrate of semiconductor material. A source region, a drain region, and a conducting region of the semiconductor device are formed in the substrate and doped with a first type of impurities. The conducting region is operable to conduct current between the drain region and the source region when the semiconductor device is operating in an on state. A gate region is also formed in the substrate and doped with a second type of impurities. The gate region abuts a channel region of the conducting region. A stress layer is deposited on at least a portion of the conducting region. The stress layer applies a stress to the conducting region along a boundary of the conducting region that strains at least a portion of the conducting region.Type: GrantFiled: May 4, 2007Date of Patent: November 18, 2008Assignee: DSM Solutions, Inc.Inventor: Ashok K. Kapoor
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Publication number: 20080272408Abstract: Integrated active area isolation structure for transistor to replace larger and more expensive Shallow Trench Isolation or field oxide to isolate transistors. Multiple well implant is formed with PN junctions between wells and with surface contacts to substrate and wells so bias voltages applied to reverse bias PN junctions to isolate active areas. Insulating layer is formed on top surface of substrate and interconnect channels are etched in insulating layer which do not go down to the semiconductor substrate. Contact openings for surface contacts to wells and substrate are etched in insulating layer down to semiconductor layer. Doped silicon or metal is formed in contact openings for surface contacts and to form interconnects in channels. Silicide may be formed on top of polycrystalline silicon contacts and interconnect lines to lower resistivity. Any JFET or MOS transistor may be integrated into the resulting junction isolated active area.Type: ApplicationFiled: April 30, 2008Publication date: November 6, 2008Applicant: DSM SOLUTIONS, INC.Inventor: Madhukar B. Vora
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Publication number: 20080230812Abstract: Various integrated circuit devices, in particular a junction field-effect transistor (JFET), are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described.Type: ApplicationFiled: February 27, 2008Publication date: September 25, 2008Applicant: Advanced Analogic Technologies, Inc.Inventors: Donald R. Disney, Richard K. Williams
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Patent number: 7420232Abstract: A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.Type: GrantFiled: April 11, 2006Date of Patent: September 2, 2008Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kazuhiro Fujikawa, Shin Harada, Kenichi Hirotsu, Satoshi Hatsukawa, Takashi Hoshino, Hiroyuki Matsunami, Tsunenobu Kimoto
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Patent number: 7417266Abstract: A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.Type: GrantFiled: June 10, 2005Date of Patent: August 26, 2008Assignee: QSpeed Semiconductor Inc.Inventors: Jian Li, Daniel Chang, Ho-Yuan Yu
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Patent number: 7411231Abstract: The present invention provides a JFET which receives an additional implant during fabrication, which extends its drain region towards its source region, and/or its source region towards its drain region. The implant reduces the magnitude of the e-field that would otherwise arise at the drain/channel (and/or source/channel) junction for a given drain and/or source voltage, thereby reducing the severity of the gate current and breakdown problems associated with the e-field. The JFET's gate layer is preferably sized to have a width which provides respective gaps between the gate layer's lateral boundaries and the drain and/or source regions for each implant, with each implant implanted in a respective gap.Type: GrantFiled: December 1, 2006Date of Patent: August 12, 2008Assignee: Analog Devices, Inc.Inventors: Craig Wilson, Derek Bowers, Gregory K. Cestra
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Patent number: 7378688Abstract: A microelectric product and the method for manufacturing the product are provided. A source and drain are spaced from one another in a first direction and are connected to opposing ends of a channel to provide a set voltage. First and second gates are spaced from one another in a second direction surrounding a portion of the channel to allow for application and removal of a gate voltage. Application of the gate voltage repels majority carriers in the channel to reduce the current that conducts between the source and drain.Type: GrantFiled: December 29, 2006Date of Patent: May 27, 2008Assignee: Intel CorporationInventor: Dominik J. Schmidt
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Publication number: 20080099798Abstract: A junction field effect transistor (JFET) device is disclosed for amplifying an input signal. The JFET device includes a first gate region and a substrate/well/bulk region that may form a second gate region. The JFET device also includes a first source/drain region and a second source/drain region. The first source/drain region may receive an input signal and either the first gate region or the second gate region may provide an amplified output signal. A current supplied across the channel region may be substantially independent of a current supplied between the gate region and a bulk region of the substrate. The device may be configured to amplify a time varying input signal to provide an amplified time varying output signal.Type: ApplicationFiled: October 3, 2007Publication date: May 1, 2008Inventor: Douglas Kerns
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Publication number: 20080074908Abstract: A depletion mode transistor serving as a start-up control element is provided. The depletion mode transistor includes a first depletion mode junction transistor and a second depletion mode transistor. The first depletion mode junction transistor includes a source and a drain, one of which is coupled to a voltage supply source, and a gate electrically coupled to ground. The second depletion mode transistor includes a source and a drain, one of which is coupled to the other one of the source and the drain of the first depletion mode junction transistor, and a gate being controllable to turn OFF the second depletion mode transistor.Type: ApplicationFiled: March 5, 2007Publication date: March 27, 2008Inventors: Kuang-Ming Chang, Shien-Hsing Cheng
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Publication number: 20080073675Abstract: A transistor having a start-up control element is provided. The transistor includes an N-type depletion mode transistor and an N-type enhancement mode transistor. The N-type depletion mode transistor includes a drain for electrically connecting to an external power supply, and a gate normally grounded. The N-type enhancement mode transistor includes a drain electrically connected to the external power supply, and a gate electrically connected to a source of the depletion mode transistor.Type: ApplicationFiled: January 24, 2007Publication date: March 27, 2008Inventors: Chien-Hsing Cheng, Kuang-Ming Chang
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Patent number: 7335952Abstract: To provide a semiconductor device that permits free setting of characteristics of individual semiconductor elements which are mixedly mounted and have different characteristics, and is free of steps between formed semiconductor elements, in a manufacturing method for the semiconductor device, an n-type silicon layer is deposited on a p-type silicon substrate by epitaxial growth, and then an SOI layer is deposited thereon through the intermediary of a BOX layer. A junction transistor using a part of the n-type silicon layer as a channel region and a MOS transistor using the SOI layer are produced.Type: GrantFiled: September 13, 2005Date of Patent: February 26, 2008Assignee: Oki Electric Industry Co., Ltd.Inventor: Hiroyuki Tanaka
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Patent number: 7312481Abstract: The present invention provides a high-voltage junction field effect transistor (JFET), a method of manufacture and an integrated circuit including the same. One embodiment of the high-voltage junction field effect transistor (JFET) (300) includes a well region (320) of a first conductive type located within a substrate (318) and a gate region (410) of a second conductive type located within the well region (320), the gate region (410) having a length and a width. This embodiment further includes a source region (710) and a drain region (715) of the first conductive type located within the substrate (318) in a spaced apart relation to the gate region (410) and a doped region (810) of the second conductive type located in the gate region (410) and extending along the width of the gate region (410).Type: GrantFiled: October 1, 2004Date of Patent: December 25, 2007Assignee: Texas Instruments IncorporatedInventors: Kaiyuan Chen, Joe Trogolo, Tathagata Chatterjee, Steve Merchant
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Patent number: 7253071Abstract: Methods for reducing stress in silicon to enhance the formation of nickel mono-silicide films formed thereon include a strain compensation source/drain implant process, a silicide formation process on an amorphous silicon layer, a strain compensating buried layer process, a strain compensating dielectric capping layer process during silicide formation, a two cycle anneal process during silicide formation, an excess nickel process to transform NiSi2 to NiSi.Type: GrantFiled: March 7, 2005Date of Patent: August 7, 2007Assignee: Taiwan Semiconductor Manufacturing CompanyInventor: Tan-Chen Lee
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Patent number: 7238976Abstract: A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second doped region is disposed between the first doped region and the first conductive layer. The plurality of third doped regions are disposed in the second doped region. The first doped region of the semiconductor is heavily doped with a first type of dopant (e.g., phosphorous or arsenic). The second doped region is moderately doped with the first type of dopant. The plurality of third doped regions are moderately to heavily doped with a second type of dopant.Type: GrantFiled: June 15, 2004Date of Patent: July 3, 2007Assignee: QSpeed Semiconductor Inc.Inventors: Ho-Yuan Yu, Chong-Ming Lin
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Patent number: 7227203Abstract: A power control system (25) uses two separate currents to control a startup operation of the power control system (25). The two currents are shunted to ground to inhibit operation of the power control system (25) and one of the two currents is disabled to minimize power dissipation. The two independently controlled currents are generated by a multiple output current high voltage device (12) responsively to two separate control signals (23,24).Type: GrantFiled: June 8, 2005Date of Patent: June 5, 2007Assignee: Semiconductor Components Industries, L.L.C.Inventors: Josef Halamik, Jefferson W. Hall
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Patent number: 7049644Abstract: A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.Type: GrantFiled: December 2, 2002Date of Patent: May 23, 2006Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kazuhiro Fujikawa, Shin Harada, Kenichi Hirotsu, Satoshi Hatsukawa, Takashi Hoshino, Hiroyuki Matsunami, Tsunenobu Kimoto
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Patent number: 6960797Abstract: The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 1000˜5,000 ?·cm.Type: GrantFiled: December 17, 2002Date of Patent: November 1, 2005Assignee: Sanyo Electric Co., Ltd.Inventors: Shigeaki Okawa, Toshiyuki Ohkoda
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Patent number: 6927460Abstract: A structure of and a method for making an isolated NMOS transistor using standard BiCMOS processing steps and techniques. No additional masks and processing steps are needed for the isolated NMOS device relative to the standard process flow. A P-type substrate with an overlaying buried N-type layer overlaid with a buried p-type layer below a P-well is shown. An N-type region surrounds and isolates the P-well from other devices on the same wafer. N+ regions are formed in the p-well for the source and drain connections and poly or other such electrical conductors are formed on the gate, drain and source structures to make the NMOS device operational. Parasitic bipolar transistors are managed by the circuit design, current paths and biasing to ensure the parasitic bipolar transistors do not turn on.Type: GrantFiled: February 18, 2003Date of Patent: August 9, 2005Assignee: Fairchild Semiconductor CorporationInventors: Steven M. Leibiger, Ronald B. Hulfachor, Michael Harley-Stead, Daniel J. Hahn
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Patent number: 6906359Abstract: According to one exemplary embodiment, a BiFET situated on a substrate comprises an emitter layer segment situated over the substrate, where the emitter layer segment comprises a semiconductor of a first type. The HBT further comprises a first segment of an etch stop layer, where the first segment of the etch stop layer comprises InGaP. The BiFET further comprises a FET situated over the substrate, where the FET comprises source and drain regions, where a second segment of the etch stop layer is situated under the source and drain regions, and where the second segment of the etch stop layer comprises InGaP. The FET further comprises a semiconductor layer of a second type situated under the second segment of the etch stop layer. The etch stop layer increases linearity of the FET and does not degrade electron current flow in the HBT.Type: GrantFiled: October 22, 2003Date of Patent: June 14, 2005Assignee: Skyworks Solutions, Inc.Inventors: Peter J. Zampardi, Richard Pierson
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Patent number: 6903426Abstract: A semiconductor switching device includes two FETs with different device characteristics, a common input terminal, and two output terminals. A signal transmitting FET has a gate width of 500 ?m and a signal receiving FET has a gate width of 400 ?m. A resistor connecting a gate electrode and a control terminal of the signal transmitting FET is tightly configured to provide expanding space for the FET. Despite the reduced size, the switching device can allow a maximum power of 22.5 dBm to pass through because of the asymmetrical device design. The switching device operates at frequencies of 2.4 GHz or higher without use of shunt FET.Type: GrantFiled: May 24, 2002Date of Patent: June 7, 2005Assignee: Sanyo Electric Co., Ltd.Inventors: Tetsuro Asano, Toshikazu Hirai, Mikito Sakakibara
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Patent number: 6900482Abstract: A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a plurality of rectangular-shaped active regions arranged side by side on the front surface of the semiconductor substrate, each of the active regions having interdigited gate, drain and source electrodes thereon which are connected to the respective pads by multilayer interconnection technique. Additionally, the source potential is fed from the back surface of the substrate through a metal plugged via-hole.Type: GrantFiled: March 14, 2002Date of Patent: May 31, 2005Assignee: Fujitsu Quantum Devices LimitedInventors: Yoshio Aoki, Yutaka Mimino, Osamu Baba, Muneharu Gotoh
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Patent number: 6885078Abstract: A circuit isolation technique that uses implanted ions in embedded portions of a wafer substrate to lower the resistance of the substrate under circuits formed on the wafer or portions of circuits formed on the wafer to prevent the flow of injected currents across the substrate. The embedded ions provide low resistance regions that allow injected currents from a circuit to flow directly to a ground potential in the same circuit rather than flowing across the substrate to other circuits. High energy implantation processes on the order of 1 MeV to 3 MeVs can be used to implant the ions in embedded regions. Multiple energy levels can be used to provide thick embedded layers either prior to or after application of an epitaxial layer. Various masking materials can be used to mask the isolation regions during the implantation process, including hard masking materials such as silicon dioxide or silicon nitride, poly-silicon or an amorphous silicon layer, and a photoresist layer.Type: GrantFiled: November 9, 2001Date of Patent: April 26, 2005Assignee: LSI Logic CorporationInventors: Donald M. Bartlett, Gayle W. Miller, Randall J. Mason
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Patent number: 6777722Abstract: A method for fabricating a junction field effect transistor (JFET) with a double dose gate structure. A trench is etched in the surface of a semiconductor substrate, followed by a low dose implant to form a first gate region. An anneal may or may not be performed after the low dose implant. A gate definition spacer is then formed on the wall the trench to establish the lateral extent of a second, high dose implant gate region. After the second implant, the gate is annealed. The double dose gate structure produced by the superposition of two different and overlapping regions provides an additional degree of flexibility in determining the ultimate gate region doping profile. A further step comprises using the gate definition spacer to define the walls of a second etched trench that is used to remove a portion of the p-n junction, thereby further reducing the junction capacitance.Type: GrantFiled: July 2, 2002Date of Patent: August 17, 2004Assignee: Lovoltech, Inc.Inventors: Ho-Yuan Yu, Valentino L. Liva, Pete Pegler
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Patent number: 6768143Abstract: An integrated circuit including a field effect transistor (FET) is provided in which the gate conducter has an even number of fingers disposed between alternating source and drain regions of a substrate. The fingers are disposed in a pattern over an area of the substrate having a length in a horizontal direction, the area equaling the length multiplied by a width in a vertical direction that is occupied by an odd number of the fingers.Type: GrantFiled: August 26, 2003Date of Patent: July 27, 2004Assignee: International Business Machines CorporationInventors: Gregory J. Fredeman, John W. Golz, David R. Hanson, Hoki Kim
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Publication number: 20040110345Abstract: An architecture for creating a vertical JFET. Generally, an integrated circuit structure includes a semiconductor area with a major surface formed along a plane and a first source/drain doped region formed in the surface. A second doped region forming a channel of different conductivity type than the first region is positioned over the first region. A third doped region is formed over the second doped region having an opposite conductivity type with respect to the second doped region, and forming a source/drain region. A gate is formed over the channel to form a vertical JFET.Type: ApplicationFiled: November 26, 2003Publication date: June 10, 2004Inventors: Samir Chaudhry, Paul Arthur Layman, John Russell McMacken, Ross Thomson, Jack Qingsheng Zhao
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Publication number: 20040061151Abstract: A semiconductor device including a substrate having a dopant of a first polarity, a first semiconducting structure including a dopant of a second polarity disposed over the substrate, and having substantially planar top and side surfaces. The semiconductor device includes a first junction, formed between the first semiconducting structure and the substrate, having an area wherein at least one lateral dimension is less than about 75 nanometers.Type: ApplicationFiled: September 27, 2002Publication date: April 1, 2004Inventors: James Stasiak, Jennifer Wu, David E. Hackleman
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Patent number: 6710426Abstract: A field effect transistor (FET) is formed on a semiconductor substrate. A drain terminal, a source terminal, and a gate terminal connected to the FET are also formed on the semiconductor substrate. In an embodiment of the invention, a metal insulator metal (MIM) capacitor for blocking a bias current is disposed between the FET and the drain terminal. A bias terminal is provided between the MIM capacitor and the FET. Passive circuits connected to the drain terminal, the source terminal, and the gate terminal, and a bias circuit connected to the bias terminal are formed on a dielectric substrate. With this arrangement, the circuitry on the semiconductor substrate can be simplified. The general versatility of a resulting semiconductor device can be increased, and the size of the semiconductor device can be reduced.Type: GrantFiled: March 12, 2003Date of Patent: March 23, 2004Assignee: Murata Manufacturing Co., Ltd.Inventors: Motoyasu Nakao, Akihiro Sasabata
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Patent number: 6690040Abstract: A vertical JFET architecture. Generally, an integrated circuit structure includes a semiconductor area with a major surface formed along a plane and a first source/drain doped region formed in the surface. A second doped region forming a channel of different conductivity type than the first region is disposed over the first region. A third doped region is formed over the second doped region having an opposite conductivity type with respect to the second doped region, and forming a source/drain region. A gate is formed over the channel to form a vertical JFET.Type: GrantFiled: September 10, 2001Date of Patent: February 10, 2004Assignee: Agere Systems Inc.Inventors: Samir Chaudhry, Paul Arthur Layman, John Russell McMacken, Ross Thomson, Jack Qingsheng Zhao
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Patent number: 6661056Abstract: The present invention relates to a circuit configuration for protecting against polarity reversal of a DMOS transistor. A charge carrier zone (30) is provided, situated in the drift zone (14) of DMOS transistor (10), made up of individual partial charge carrier zones (32) situated at a distance from one another and connected to one another in a conducting manner, the charge carrier zone (30) having an opposite charge carrier doping from that of the drift zone (14), and being able to be acted upon by a potential that is negative with respect to a potential present at a drain terminal (24) of the DMOS transistor (10), so that a short-circuit current is prevented.Type: GrantFiled: September 26, 2002Date of Patent: December 9, 2003Assignee: Robert Bosch GmbHInventors: Robert Plikat, Wolfgang Feiler
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Patent number: 6627973Abstract: A method of eliminating voids in the interlayer dielectric material of 0.18-&mgr;m flash memory semiconductor devices and a semiconductor device formed by the method. The present invention provides a method for eliminating voids in the interlayer dielectric of a 0.18-&mgr;m flash memory semiconductor device by providing a first BPTEOS layer, using a very low deposition rate and having a thickness in a range of approximately 3 kÅ; and providing a second BPTEOS layer, using a standard deposition rate and having a thickness in a range of approximately 13 kÅ, wherein both layers have an atomic dopant concentration of approximately 4.5% B and approximately 5% P. This two-step deposition process completely eliminates voids in the ILD for a 0.5-&mgr;m distance (gate-to-gate) as well as 0.38-&mgr;m distance (gate-to-gate) which is the future flash technology.Type: GrantFiled: September 13, 2002Date of Patent: September 30, 2003Assignee: Advanced Micro Devices, Inc.Inventors: Minh Van Ngo, Robert A. Huertas, Lu You, King Wai Kelwin Ko, Pei-Yuan Gao
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Patent number: 6555857Abstract: The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 1000˜5,000 &OHgr;·cm.Type: GrantFiled: March 8, 2000Date of Patent: April 29, 2003Assignee: Sanyo Electric Co., Ltd.Inventors: Shigeaki Okawa, Toshiyuki Ohkoda
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Patent number: 6534807Abstract: A JOI structure and cell layout including at least one patterned gate stack region present atop a semiconductor substrate, said semiconductor substrate having source/drain diffusion regions of opposite dopant polarity abutting each other present therein, said source/drain diffusion regions are present atop an insulating layer, said insulating layer not being present beneath said at least one patterned gate stack region.Type: GrantFiled: August 13, 2001Date of Patent: March 18, 2003Assignee: International Business Machines CorporationInventors: Jack A. Mandelman, Dong Gan, Chung H. Lam
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Publication number: 20030047749Abstract: An architecture for creating a vertical JFET. Generally, an integrated circuit structure includes a semiconductor area with a major surface formed along a plane and a first source/drain doped region formed in the surface. A second doped region forming a channel of different conductivity type than the first region is positioned over the first region. A third doped region is formed over the second doped region having an opposite conductivity type with respect to the second doped region, and forming a source/drain region. A gate is formed over the channel to form a vertical JFET.Type: ApplicationFiled: September 10, 2001Publication date: March 13, 2003Inventors: Samir Chaudhry, Paul Arthur Layman, John Russell McMacken, Ross Thomson, Jack Qingsheng Zhao
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Patent number: 6501110Abstract: A semiconductor memory cell comprising a first transistor for readout, a second transistor for switching, and having a first region, a second region formed in a surface region of the first region, a third region formed in a surface region of the second region, a fourth region formed in a surface region of the first region and spaced from the second region, a fifth region formed in a surface region of the fourth region, and a gate region, wherein when the semiconductor memory cell is cut with a first imaginary perpendicular plane which is perpendicular to the extending direction of the gate region and passes through the center of the gate region, the second region and the fourth region in the vicinity of the gate region are nearly symmetrical with respect to a second imaginary perpendicular plane which is in parallel with the extending direction of the gate region and passes through the center of the gate region.Type: GrantFiled: April 19, 2000Date of Patent: December 31, 2002Assignee: Sony CorporationInventors: Mikio Mukai, Toshio Kobayashi, Yutaka Hayashi
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Patent number: 6476430Abstract: In transistors with sub-micron channels, short-channel effects, such as a lowering of the threshold voltage, are usually suppressed by means of a halo (or pocket) implant in the source/drain regions, which operation is performed jointly with the LDD implantation. The halo implant, however, decreases the analog performance of transistors. To combine suppression of short-channel effects with a high analog performance, it is proposed to provide only transistors T1, which are not intended for analog functions with the halo implant (16), and to mask the analog transistors T2 with a mask (15) against the halo implant. To avoid short-channel effects in T2, this transistor is provided with a channel whose length is larger than that of transistor T1.Type: GrantFiled: September 7, 2000Date of Patent: November 5, 2002Assignee: Koninklijke Philips Electronics N.V.Inventors: Jurriaan Schmitz, Andreas H. Montree
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Patent number: 6465830Abstract: A voltage controlled capacitor sandwiched between a buried oxide and a shallow trench insulator to form a near ideal P+ to n-well diode with minimal parasitic capacitance and resistance.Type: GrantFiled: May 21, 2001Date of Patent: October 15, 2002Assignee: Texas Instruments IncorporatedInventors: Jeffrey A. Babcock, Gregory E. Howard, Angelo Pinto
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Patent number: 6347050Abstract: A semiconductor memory cell comprising (1) a first transistor of a first conductivity type for read-out having source/drain regions composed of a surface region of a third region and a second region and a channel forming region composed of a surface region of a first region, (2) a second transistor of a second conductivity type for write-in having source/drain regions composed of the first region and a fourth region and a channel forming region composed of a surface region of the third region, and (3) a junction-field-effect transistor of a first conductivity type for current control having gate regions composed of the fourth region and a portion of the first region facing the fourth region, a channel region composed of the third region sandwiched by the fourth region and the first region and source/drain regions composed of the third region.Type: GrantFiled: March 29, 2000Date of Patent: February 12, 2002Assignee: Sony CorporationInventors: Mikio Mukai, Yutaka Hayashi
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Patent number: 6313489Abstract: A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral transistor device in an SOI layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region and forms a lightly-doped drain region, and a drain contact region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being at least substantially insulated from the body region and drift region by a surface insulation region.Type: GrantFiled: November 16, 1999Date of Patent: November 6, 2001Assignee: Philips Electronics North America CorporationInventors: Theodore Letavic, Mark Simpson, Richard Egloff, Andrew Mark Warwick
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Patent number: 6307223Abstract: Junction Field Effect Transistor (JFET) offers fast switching speed than bipolar transistor since JFET is a majority carrier device. This invention comprises two normally “off” JFETs, one in N-channel and one in P-channel to form Complementary Junction Field Effect Transistors for high speed, low voltage and/or high current applications. The discrete device structure is disclosed in this invention. The integrated Complementary Junction Field Effect Transistors structure processed in standard CMOS process is disclosed in this invention. A vertical gate structure of Complementary Junction Field Effect Transistors is disclosed. Complementary Junction Field Effect Transistors structure is also disclosed in SOI substrate.Type: GrantFiled: December 9, 1999Date of Patent: October 23, 2001Assignee: Lovoltech, Inc.Inventor: Ho-yuan Yu
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Patent number: 6255710Abstract: An integrated smart power circuit including a power semiconductor device fabricated on a conducting substrate with a source positioned adjacent the upper surface of the substrate, a control terminal between the upper and lower surfaces, and a drain positioned adjacent the lower surface of the substrate. A high resistance layer is formed on a portion of the upper surface of the substrate, either directly overlying or adjacent to the power device, and doped semiconductor material is positioned on the high resistance layer. Control circuitry is formed in the doped semiconductor material. The high resistance layer can be conveniently formed by growing a layer of AlAs and growing doped layers on the AlAs. The AlAs can be easily oxidized thereafter.Type: GrantFiled: May 4, 1998Date of Patent: July 3, 2001Assignee: Motorola, Inc.Inventors: Charles E. Weitzel, Nada El-Zein
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Patent number: 6160280Abstract: A field effect transistor structure which can serve as a low noise amplifier. The field effect transistor has a major surface and source and drain regions extending from the major surface into a body of semiconductor material. A channel region is formed in a portion of the body of semiconductor material separating the source and drain regions. The channel region has a first boundary perpendicular to the major and contiguous with the source region, a second boundary parallel to the first boundary and contiguous with the drain region, a third boundary perpendicular to the first boundary, and a fourth boundary parallel to the channel region. A first portion of the channel region is enclosed by a first border parallel to the first boundary of the channel region, a second border parallel to the second boundary of the channel region, a third boundary of the channel region, and the fourth boundary of the channel region.Type: GrantFiled: March 4, 1996Date of Patent: December 12, 2000Assignee: Motorola, Inc.Inventors: Fred H. Bonn, George B. Norris, John Michael Golio
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Patent number: 6153453Abstract: The present invention relates to a method of manufacturing a JFET transistor in an integrated circuit containing complementary MOS transistors, this JFET transistor being formed in an N-type well of a P-type substrate, including the steps of forming a P-type channel region at the same time as lightly-doped drain/source regions of the P-channel MOS transistors of; forming an N-type gate region at the same time as lightly-doped drain/source regions of the N-channel MOS transistors; and forming P-type drain/source regions at the same time as heavily-doped drain/source regions of P-channel MOS transistors of channel.Type: GrantFiled: March 30, 1999Date of Patent: November 28, 2000Assignee: STMicroelectronics S.A.Inventor: Jean Jimenez
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Patent number: 6104048Abstract: An electrostatic protection network is disclosed that may be employed in a disk drive having a magneto-resistive read element. The network comprises a ground; and an array that block a signal current flow between the read element and the ground while a signal voltage is below a predetermined value and conducts the signal current from the read element to the ground while the signal voltage is above the predetermined value. The array is formed of a N-channel and P-channel junction field effect transistors. Thus, electrostatic discharge events are dissipated through the network to diminish damage to the read element during an ESD event.Type: GrantFiled: June 30, 1999Date of Patent: August 15, 2000Assignee: Iomega CorporationInventors: Wenwei Wang, Larry Trung Vo