With Shield, Filter, Or Lens Patents (Class 257/294)
  • Patent number: 10868067
    Abstract: A method of manufacturing a semiconductor device includes: providing a semiconductive substrate; forming a gate structure over the semiconductive substrate; forming a first dielectric layer over the gate structure; forming a first through hole in the first dielectric layer adjacent to and spaced apart from a sidewall of the gate structure; filling the first through hole with a material; forming a via in the first dielectric layer by etching the material and the first dielectric layer; removing the material to form a second through hole in the first dielectric layer; and forming a conductive structure by filling the via and the second through hole with a conductive material.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tsun-Kai Tsao, Shih-Pei Chou, Jiech-Fun Lu
  • Patent number: 10854657
    Abstract: The present technique relates to a solid-state image pickup element and an electronic apparatus each of which enables a pad to be formed in a shallow position while reduction of a quality of a back side illumination type solid-state image pickup element is suppressed. The solid-state image pickup element includes a pixel substrate in which a light condensing layer for condensing incident light on a photoelectric conversion element, a semiconductor layer in which the photoelectric conversion element is formed, and a wiring layer in which a wiring and a pad for outside connection are formed are laminated on one another, and at least a part of a first surface of the pad is exposed through a through hole completely extending through the light condensing layer and the semiconductor layer. The present technique, for example, can be applied to a back side illumination type CMOS image sensor.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: December 1, 2020
    Assignee: Sony Corporation
    Inventors: Keishi Inoue, Kenju Nishikido
  • Patent number: 10818879
    Abstract: A method of manufacturing an organic electroluminescence display panel includes: forming pixel electrodes in matrix on a substrate; arranging column banks extending in column direction above the substrate along row direction, the banks each being between adjacent pixel electrodes in the row direction; applying ink containing organic light emitting material to gaps between adjacent banks, the applied ink being continuous in the column direction; reducing pressure of atmosphere including the substrate to first pressure while positioning a rectifying plate at first distance from upper surface of the substrate, the plate covering region with the ink applied on the substrate; reducing, after the reducing, the pressure to second pressure, which is lower than the first pressure, or lower while positioning the plate at second distance, which is greater than the first distance, from the surface; heating the substrate to form organic functional layer; and forming counter electrode above the functional layer.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: October 27, 2020
    Assignee: JOLED INC.
    Inventor: Toshio Fukuda
  • Patent number: 10811539
    Abstract: Provided herein are devices, systems, and methods of employing the same for the performance of bioinformatics analysis. The apparatuses and methods of the disclosure are directed in part to large scale graphene FET sensors, arrays, and integrated circuits employing the same for analyte measurements. The present GFET sensors, arrays, and integrated circuits may be fabricated using conventional CMOS processing techniques based on improved GFET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense GFET sensor based arrays. Improved fabrication techniques employing graphene as a reaction layer provide for rapid data acquisition from small sensors to large and dense arrays of sensors. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes, including DNA hybridization and/or sequencing reactions.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: October 20, 2020
    Assignee: NANOMEDICAL DIAGNOSTICS, INC.
    Inventors: Pieter van Rooyen, Mitchell Lerner, Paul Hoffman
  • Patent number: 10797097
    Abstract: The present disclosure relates to a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: October 6, 2020
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yusuke Tanaka, Takashi Nagano, Toshifumi Wakano, Takeshi Matsunuma
  • Patent number: 10770496
    Abstract: An optical sensor includes an optical layer disposed on a substrate, and a light shielding layer disposed on the optical layer, wherein the light shielding layer includes a first opening that partially exposes the optical layer. The optical sensor also includes a polymer material layer that fills the first opening, wherein a top surface of the polymer material layer is higher than a top surface of the light shielding layer. The optical sensor further includes an adhesive layer disposed on the light shielding layer and the polymer material layer, and a surface component disposed on the adhesive layer.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: September 8, 2020
    Assignee: VISERA TECHNOLOGIES COMPANY LIMITED
    Inventors: Ching-Chiang Wu, Ho-Tai Lin, Masafumi Sano
  • Patent number: 10748953
    Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a top surface, on which has been formed a color filter and a micro-lens, and a bottom surface opposite to the top surface, forming a redistribution line on the bottom surface of the semiconductor substrate, and forming on the bottom surface of the semiconductor substrate a passivation layer covering the redistribution line. After the redistribution line and passivation layer are formed, an oxide layer between the redistribution line and the passivation is formed at a temperature that avoids thermal damage to the color filter and the micro-lens.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: August 18, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yonghoe Cho, Jongbo Shim, Seunghoon Yeon, Won Il Lee
  • Patent number: 10714454
    Abstract: According to an aspect, a stack packaging structure includes a substrate, a semiconductor device coupled to a surface of the substrate, an image sensor device coupled to the semiconductor device such that the semiconductor device is disposed between the surface of the substrate and the image sensor device, at least one bond wire connected to the image sensor device and the surface of the substrate, a inner molding disposed between the surface of the substrate and the image sensor device, where the semiconductor device is encapsulated within the inner molding, and an outer molding disposed on the surface of the substrate, where the at least one bond wire is encapsulated within the outer molding.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: July 14, 2020
    Assignee: Semiconductor Components Industries, LLC
    Inventor: Yu-Te Hsieh
  • Patent number: 10707255
    Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: July 7, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yun Ki Lee
  • Patent number: 10559616
    Abstract: The present technology relates to a solid-state imaging apparatus and an electronic device that are configured to enhance the accuracy in the detection of polarization information. The solid-state imaging apparatus has a pixel array block on which pixels each including a photoelectric conversion device are arranged; a polarizer, including a conductive light-shielding material, that covers a photosensitive surface of the above-mentioned photoelectric conversion device of at least part of the above-mentioned pixels; a light-shielding film, including a conductive light-shielding material, that is arranged between the above-mentioned adjacent pixels on the photosensitive surface side of the above-mentioned photoelectric conversion device; and a wiring layer arranged on a side opposite to the photosensitive surface of the above-mentioned photoelectric conversion device, in which the above-mentioned polarizer is connected to a wiring of the above-mentioned wiring layer via the above-mentioned light-shielding film.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: February 11, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Yusuke Uesaka
  • Patent number: 10475837
    Abstract: An electronic device has a mounted image sensor including a light shielding body having light shielding walls and light transmitting portions each formed in an opening between the light shielding walls, a first light-shielding layer formed on a light incident surface side of the light shielding body and having an opening narrower than the opening of the light shielding body for each of the openings of the light shielding body, a microlens provided for each of the openings of the first light-shielding layer on the light incident surface side of the light shielding body, and a light receiving element layer with an array of a large number of light receiving elements. The present disclosure can be used for, for example, a compound-eye optical system.
    Type: Grant
    Filed: June 9, 2016
    Date of Patent: November 12, 2019
    Assignee: SONY CORPORATION
    Inventors: Yusuke Moriya, Kunihiko Hikichi, Hiroyuki Itou, Atsushi Yamamoto, Masahiko Shimizu
  • Patent number: 10462361
    Abstract: A seeker imaging system and method includes at least one imager, a plurality of optical elements, and control electronics. The at least one imager is configured to output image frame data. The plurality of optical elements are configured to receive light and direct the light to the at least one imager. The control electronics are configured to receive the image frame data from the at least one imager. The control electronics is configured to obtain a plurality of initial images from each frame of the image frame data, and wherein the control electronics is configured to generate a single output image based upon the plurality of initial images.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: October 29, 2019
    Assignee: Rosemount Aerospace Inc.
    Inventor: Todd Anthony Ell
  • Patent number: 10411060
    Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: September 10, 2019
    Assignee: Infineon Technologies AG
    Inventors: Dirk Meinhold, Emanuele Bruno Bodini, Felix Braun, Hermann Gruber, Uwe Hoeckele, Dirk Offenberg, Klemens Pruegl, Ines Uhlig
  • Patent number: 10411184
    Abstract: A magnetic device and method for programming the magnetic device are described. The magnetic device includes a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer having a plurality of sides. The SO active layer(s) carry a current in direction(s) substantially perpendicular to the plurality of sides. Each of the magnetic junction(s) is adjacent to the sides and substantially surrounds a portion of the SO active layer. Each magnetic junction includes a free layer, a reference layer and a nonmagnetic spacer layer between the pinned and free layers. The SO active layer(s) exert a SO torque on the free layer due to the current passing through the SO active layer(s). The free layer is switchable between stable magnetic states. The free layer may be written using the current and, in some aspects, another current driven through the magnetic junction.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: September 10, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Vladimir Nikitin, Dmytro Apalkov
  • Patent number: 10388686
    Abstract: A image sensor includes a semiconductor substrate with a photosensitive region. Metallization layers are stacked over the semiconductor substrate. Each metallization layer includes an etch stop layer and a dielectric layer on the etch stop layer. At least one metallization layer includes one or more microlenses positioned over the photosensitive region. The one or more microlenses are integrally formed by the etch stop layer.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: August 20, 2019
    Assignee: STMicroelectronics (Grenoble 2) SAS
    Inventor: Flavien Hirigoyen
  • Patent number: 10388682
    Abstract: The image sensor includes: a semiconductor substrate having a first conductivity type and including a first surface, a second surface opposite to the first surface, and a well region adjacent to the first surface. A first vertical transfer gate and a second vertical transfer gate are spaced apart from each other and extend in a thickness direction of the semiconductor substrate from the first surface to pass through at least a part of the well region. A photoelectric conversion region has a second conductivity type, which is different from the first conductivity type, is located in the semiconductor substrate between the well region and the second surface, and overlaps the first vertical transfer gate and the second vertical transfer gate in the thickness direction of the semiconductor substrate. A wiring structure is located on the first surface of the semiconductor substrate.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: August 20, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Young-Gu Jin
  • Patent number: 10379403
    Abstract: A method for manufacturing a pixel unit includes the following steps. A channel layer is formed. A first pattern layer is formed above the channel layer and includes a scan line and a gate electrode. A second pattern layer is formed above the first pattern layer and includes a data line and a source electrode, where the source electrode is electrically connected to the channel layer. A third pattern layer is formed above the second pattern layer and includes a drain electrode and an auxiliary electrode, where the drain electrode is electrically connected to the channel layer. The auxiliary electrode is electrically connected to the scan line through a first contact hole.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: August 13, 2019
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Peng-Bo Xi, Sung-Yu Su, Chu-Hsuan I
  • Patent number: 10371877
    Abstract: A lighting device includes a light source array, a wavelength converting member, and a light guide plate. The light source array includes light sources configured to emit primary light rays. The wavelength converting member includes a wavelength converting portion, a holding portion, and non-wavelength converting portions. The wavelength converting portion contains phosphors configured to emit secondary light rays when excited by the primary light rays. The wavelength converting member is disposed between the light guide plate and the light source array. The light guide plate includes a light entering surface, a light exiting surface, an opposite surface that is on an opposite side from the light exiting surface, and a light reflecting and scattering pattern. The light reflecting and scattering pattern includes complementary color dots formed in sections of the opposite surface on non-wavelength converting portion sides. The complementary color dots absorb the primary light rays.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: August 6, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Makoto Uno, Akira Gotou, Keitaro Matsui, Masanobu Harada
  • Patent number: 10374181
    Abstract: The invention relates to processes for producing semi-transparent photoactive layers, and devices comprising the same. The invention provides a process for producing a semi-transparent photoactive layer comprising: a) disposing on a substrate a composition, which composition comprises a photoactive material or one or more precursors of a photoactive material, to form a resulting layer; and b) dewetting the resulting layer to form a dewet layer of the photoactive material, wherein the dewet layer of the photoactive material is semi-transparent. The invention also provides a semi-transparent photoactive layer comprising a substrate and, disposed on the substrate, a dewet layer of a photoactive material, wherein the dewet layer of a photoactive material comprises a plurality of absorbing regions which comprise the photoactive material and a plurality of transparent regions which do not substantially comprise the photoactive material.
    Type: Grant
    Filed: June 17, 2014
    Date of Patent: August 6, 2019
    Assignee: OXFORD UNIVERSITY INNOVATION LIMITED
    Inventors: Henry Snaith, Victor Burlakov, James Ball, Giles Eperon, Alain Goriely
  • Patent number: 10341591
    Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: July 2, 2019
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Junji Hirase, Yoshihiro Sato, Yoshinori Takami, Masayuki Takase, Masashi Murakami
  • Patent number: 10319774
    Abstract: An image capturing device includes: a first substrate; a second substrate arranged so that the second substrate overlaps the first substrate; a pixel unit having a plurality of pixels arranged in a matrix shape on the first substrate; a first vertical scanning circuit arranged on one of the first substrate and the second substrate and configured to output a control signal supplied to every row or every two or more rows of the plurality of pixels; and a plurality of first buffers arranged on the second substrate so that the plurality of first buffers overlap the pixel unit, provided in correspondence with one row or a plurality of rows of the plurality of pixels, and connected to respective signal lines through which the control signal output from the first vertical scanning circuit is transmitted.
    Type: Grant
    Filed: March 30, 2016
    Date of Patent: June 11, 2019
    Assignee: OLYMPUS CORPORATION
    Inventor: Mai Arita
  • Patent number: 10319759
    Abstract: An image pickup element mounting substrate includes: a frame body composed of an insulating layer, a through hole being defined by an internal periphery of the frame body; an electronic component mounted on a lower surface side of the frame body; and a flat plate which is disposed on a lower surface of the frame body and covers an opening of the through hole while being partly kept in out-of-contact with the electronic component, the flat plate including an image pickup element mounting section at a part of an upper surface thereof which part is surrounded by the frame body, a lower surface of the electronic component being located above a level of a lower surface of the flat plate.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: June 11, 2019
    Assignee: Kyocera Corporation
    Inventors: Takuji Okamura, Akihiko Funahashi
  • Patent number: 10281782
    Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: May 7, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhengliang Li, Shi Shu, Zhanfeng Cao, Bin Zhang, Xiaolong He, Qi Yao, Jincheng Gao, Feng Guan, Xuefei Sun
  • Patent number: 10261219
    Abstract: Systems and methods in accordance with embodiments of the invention actively align a lens stack array with an array of focal planes to construct an array camera module. In one embodiment, a method for actively aligning a lens stack array with a sensor that has a focal plane array includes: aligning the lens stack array relative to the sensor in an initial position; varying the spatial relationship between the lens stack array and the sensor; capturing images of a known target that has a region of interest using a plurality of active focal planes at different spatial relationships; scoring the images based on the extent to which the region of interest is focused in the images; selecting a spatial relationship between the lens stack array and the sensor based on a comparison of the scores; and forming an array camera subassembly based on the selected spatial relationship.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: April 16, 2019
    Assignee: FotoNation Limited
    Inventors: Jacques Duparre, Andrew Kenneth John McMahon, Dan Lelescu
  • Patent number: 10241363
    Abstract: A lens array substrate includes a substrate with a concave portion provided in a first face thereof, and a lens layer having a substantially flat surface provided to cover the first face and fill the concave portion. The lens layer includes a first layer and a second layer which are sequentially laminated from a substrate side by reflecting the shape of the concave portion therein. A refractive index of the first layer is different from a refractive index of the second layer. The second layer, the first layer, and the second layer are sequentially exposed to the surface of the lens layer in this order in a first direction in a plan view. The second layer, the first layer, the substrate, the first layer, and the second layer are sequentially exposed to the surface of the lens layer in this order in a second direction that intersects the first direction.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: March 26, 2019
    Assignee: Seiko Epson Corporation
    Inventor: Norihiko Ozawa
  • Patent number: 10211244
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: February 19, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh Fang, Ming-Chi Wu, Ji-Heng Jiang, Chi-Yuan Wen, Chien-Nan Tu, Yu-Lung Yeh, Shih-Shiung Chen, Kun-Yu Lin
  • Patent number: 10203541
    Abstract: A display substrate, a method for manufacturing the display substrate, and a display device are provided. The display substrate includes a display area and a non-display area surrounding the display area. The non-display area of the display substrate includes a shading pattern, to prevent light from being transmitted through the non-display area.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: February 12, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Rui Wang, Fei Shang, Jaikwang Kim, Sijun Lei, Shaoru Li
  • Patent number: 10134878
    Abstract: Embodiments of the present disclosure generally relate to methods for forming a TFT having a metal oxide layer. The method may include forming a metal oxide layer and treating the metal oxide layer with a fluorine containing gas or plasma. The fluorine treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: November 20, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hao-Chien Hsu, Dong-Kil Yim, Tae Kyung Won, Xuena Zhang, Won Ho Sung, Rodney Shunleong Lim
  • Patent number: 10133905
    Abstract: A capacitive fingerprint sensing unit and enhanced capacitive fingerprint reader using the capacitive fingerprint sensing units are disclosed. The enhanced capacitive fingerprint reader includes a number of capacitive fingerprint sensing units, forming a fingerprint sensing array; a conductive element; and an excitation signal driver, for providing excitation signals to the conductive element. By increasing the thicknesses of a first inter-metal dielectric layer and a second inter-metal dielectric layer in fingerprint sensing units in the enhanced capacitive fingerprint reader, sensitivity of the enhanced capacitive fingerprint reader can be improved.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: November 20, 2018
    Assignee: SunASIC Technologies, Inc.
    Inventors: Chi-Chou Lin, Zheng-Ping He
  • Patent number: 10014339
    Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: July 3, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yun Ki Lee
  • Patent number: 9948839
    Abstract: An image sensor includes a sensing layer, a transparent plate, and a first guided-mode resonance structure. The sensing layer includes sensing units configured to sense a light beam. The transparent plate is located above the sensing layer. The first guided-mode resonance structure is disposed on a first area of the transparent plate, and blocks a first waveband of the light beam from passing through.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: April 17, 2018
    Assignee: Visera Technologies Company Limited
    Inventors: Wu-Cheng Kuo, Kuo-Feng Lin, Chung-Hao Lin, Yu-Kun Hsiao
  • Patent number: 9935146
    Abstract: In order to increase angular response or otherwise customize the response of phase detection pixels to incident light, phase detection pixels may include optical structures. The optical structures may be formed between a microlens and at least first and second photodiodes to redirect incident light between the microlens and the photodiodes. The optical structures may include two or more layers with different indices of refraction. For example, a layer of silicon dioxide and a layer of silicon nitride may form a concave lens that increases the angular response of phase detection pixels. The optical structures may have any desired shape to customize the response of the photodiodes to incident light.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: April 3, 2018
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Byounghee Lee
  • Patent number: 9929197
    Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: March 27, 2018
    Assignee: Sony Corporation
    Inventors: Shinji Miyazawa, Yutaka Ooka
  • Patent number: 9853066
    Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: December 26, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Hiroyuki Miyake
  • Patent number: 9818861
    Abstract: A semiconductor device including a substrate having a drain region therein is provided. A gate-electrode layer is disposed on the drain region. A first field-plate conductor is disposed on the substrate and overlaps the drain region. A gap is located laterally between the first field-plate conductor and the gate-electrode layer. A second field-plate conductor covers the first field-plate conductor and the gap. The second field-plate conductor is separated from the first field-plate conductor. A method for forming the semiconductor device is also provided.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: November 14, 2017
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Chien-Hsien Song, Chung-Ren Lao
  • Patent number: 9812479
    Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: November 7, 2017
    Assignee: Sony Corporation
    Inventors: Shinji Miyazawa, Yutaka Ooka
  • Patent number: 9754987
    Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: September 5, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yun Ki Lee
  • Patent number: 9735190
    Abstract: There is provided a solid-state imaging device which includes a plurality of pixels including an imaging pixel for generating a captured image and a focus detection pixel for detecting a focus, in which the focus detection pixel includes a microlens, a photoelectric conversion unit which receives light incident from the microlens, a light-shielding unit which shields a portion of light incident on the photoelectric conversion unit, and a dimming filter which dims the light incident on the photoelectric conversion unit and is formed to contain a black pigment. The present technology can be applied to, for example, a CMOS image sensor.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: August 15, 2017
    Assignee: Sony Corporation
    Inventors: Masanori Harasawa, Yuichi Seki, Yukihiro Sayama
  • Patent number: 9704915
    Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: July 11, 2017
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Nobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Junji Iwata
  • Patent number: 9685480
    Abstract: The present technology relates to a solid-state imaging device that can reduce the number of steps and enhance mechanical strength, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a laminate including a first semiconductor substrate having a pixel region and at least one second semiconductor substrate having a logic circuit, the at least one second semiconductor substrate being bonded to the first semiconductor substrate such that the first semiconductor substrate becomes an uppermost layer, and a penetration connecting portion that penetrates from the first semiconductor substrate into the second semiconductor substrate and connects a first wiring layer formed in the first semiconductor substrate to a second wiring layer formed in the second semiconductor substrate. The first wiring layer is formed with Al or Cu. The present technology is applicable, for example, to a back-surface irradiation type CMOS image sensor.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: June 20, 2017
    Assignee: SONY CORPORATION
    Inventor: Hajime Yamagishi
  • Patent number: 9563052
    Abstract: An electrowetting display device includes a picture element having a first support plate and a second support plate. A surface of a second layer of the first support plate is non-planar and has a shape at least partly corresponding with a pattern of a first layer of the first support plate.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: February 7, 2017
    Assignee: Amazon Technologies, Inc.
    Inventors: Jozef Elisabeth Aubert, Nicolas Eugene Bergeron, Roy Van Dijk, Andrea Giraldo
  • Patent number: 9530812
    Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: December 27, 2016
    Assignee: Sony Corporation
    Inventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
  • Patent number: 9478575
    Abstract: An image sensor includes a first pixel having a first color filter, a first reflection region which reflects light from the first color filter, and a first photoelectric conversion portion arranged in a semiconductor layer and located between the first color filter and the first reflection region, and a second pixel including a second color filter, a second reflection region which reflects light from the second color filter, and a second photoelectric conversion portion arranged in the semiconductor layer and located between the second color filter and the second reflection region. Wavelength corresponding to a maximum transmittance of the first color filter is shorter than wavelength corresponding to a maximum transmittance of the second color filter. An area of the first reflection region is smaller than area of the second reflection region.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: October 25, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventor: Taro Kato
  • Patent number: 9465973
    Abstract: An enhanced capacitive fingerprint sensing unit is disclosed. The enhanced capacitive fingerprint sensing unit includes a base structure and a fingerprint sensing structure. The fingerprint sensing structure has a first inter-metal dielectric layer, a second metal layer, a second inter-metal dielectric layer, a third metal layer, and a passivation layer. By connecting the third metal layer to Transient Voltage Suppressor (TVS) device, anti-Electrostatic Discharge (ESD) is available. By increasing the thicknesses of the first inter-metal dielectric layer and the second inter-metal dielectric layer, sensitivity of the enhanced capacitive fingerprint sensing unit can be improved.
    Type: Grant
    Filed: March 19, 2015
    Date of Patent: October 11, 2016
    Assignee: Sunasic Technologies, Inc.
    Inventors: Chi-Chou Lin, Zheng-Ping He
  • Patent number: 9461089
    Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: October 4, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chiu-Jung Chen, Chun-Hao Chou, Hsin-Chi Chen, Kuo-Cheng Lee, Volume Chien, Yung-Lung Hsu, Yun-Wei Cheng
  • Patent number: 9455292
    Abstract: An image sensing device may include an interconnect layer, an image sensor IC coupled to the interconnect layer and having an image sensing surface, and an IR filter aligned with the image sensing surface opposite the interconnect layer. The image sensing device may include a flexible interconnect layer aligned with the interconnect layer and having a flexible substrate extending laterally outwardly from the interconnect layer, and electrically conductive traces on the flexible substrate. The image sensing device may also include solder bodies coupling the interconnect layer and the flexible interconnect layer and also defining a gap between the interconnect layer and the flexible interconnect layer.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: September 27, 2016
    Assignee: STMICROELECTRONICS PTE LTD
    Inventor: Jing-En Luan
  • Patent number: 9356069
    Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filter layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: May 31, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Ren-Jie Lin, Jen-Cheng Liu, Dun-Nian Yaung
  • Patent number: 9343492
    Abstract: Provided are a complementary metal-oxide semiconductor (CMOS) image sensor based on a thin-film-on-application specific integrated circuit (TFA), and a method of operating the same. The CMOS image sensor may include at least one floating diffusion region formed in a semiconductor substrate, and a thin film type light sensor disposed to correspond to a plurality of pixels. The CMOS image sensor may also include at least one via electrically connected between the light sensor and the at least one floating diffusion region. The CMOS image sensor may also include a first micro lens disposed to correspond to at least two pixels of the plurality of pixels.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: May 17, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Gu Jin, Dong-Ki Min, Hirosige Goto, Tae-Chan Kim
  • Patent number: 9337231
    Abstract: A solid-state image sensor includes: four or more photoelectric conversion units having spectral sensitivity characteristics different from one another; an amplifier unit disposed in correspondence to each group of photoelectric conversion units among N groups (N represents an integer less than a quantity of the four or more photoelectric conversion units and equal to or greater than one), the four or more photoelectric conversion units being divided into the N groups; and transfer units, each disposed in correspondence to one of the four or more photoelectric conversion units, which transfer a signal generated at the photoelectric conversion unit to the amplifier unit disposed for the group to which the photoelectric conversion unit belongs.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: May 10, 2016
    Assignee: NIKON CORPORATION
    Inventor: Tadashi Narui
  • Patent number: 9324761
    Abstract: A method of forming an image sensor device where the method includes forming a first dielectric layer on a substrate. The method further includes patterning the first dielectric layer to define an area for a reflective shield, where the area defined for the reflective shield is above a photodiode. Additionally, the method includes forming the reflective shield on the substrate by filling the defined area with a high reflectivity material, and the high reflective material comprises a polymer.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: April 26, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Hao Shih, Szu-Ying Chen, Hsing-Lung Chen, Jen-Cheng Liu, Dun-Nian Yaung, Volume Chien