Abstract: A semiconductor device includes a semiconductor layer structure, a gate insulating pattern on the semiconductor layer structure, a gate electrode on the gate insulating pattern, and an interface layer between the gate insulating pattern and the semiconductor layer structure, the interface layer having a first segment and a second segment with a gap therebetween.

Abstract: A semiconductor device includes: a semiconductor substrate; a first transistor provided at an upper surface of the semiconductor substrate; and a first capacitor provided above the first transistor and connected to a gate of the first transistor. A tunnel current is able to flow between the gate and the semiconductor substrate.

Abstract: Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, an etching stop layer, a variable resistance layer, and a top electrode. The etching stop layer is disposed on the bottom electrode. The variable resistance layer is embedded in the etching stop layer and in contact with the bottom electrode. The top electrode is disposed on the variable resistance layer. A semiconductor device having the memory cell is also provided.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks. The pillars are directly against conducting material of conductive lines in the conductive tiers. Other arrays, and methods, are disclosed.

Abstract: A memory device includes a semiconductor layer including adjacent cell and non-cell areas in a first direction, first and second conductive lines on the layer, extending along the first direction and arranged away from each other in a second direction crossing the first direction, conductor layers arranged above the semiconductor layer in a third direction crossing the first and second directions, pillars on the cell area, passing through the conductor layers in the third direction and forming memories at intersections with the conductor layers, and shunt lines extending along the second direction and arranged in the first direction above the cell area, each of the shunt lines connected to the first and second lines via third conductive lines. A length between the shunt line closest to the non-cell area and a boundary between the cell and non-cell areas is less than a length between adjacent shunt lines.

Abstract: A three-dimensional memory device includes an alternating stack of word-line-isolation insulating layers and word-line-level electrically conductive layers located over a substrate, a plurality of drain-select-level electrodes that are laterally spaced apart from each other overlying the alternating stack, memory stack structures containing a respective vertical semiconductor channel laterally surrounded by a respective memory film and vertically extending through the alternating stack and the plurality of drain-select-level electrodes, inter-select-gate electrodes located between a respective neighboring pair of the drain-select-level electrodes, and inter-select-gate dielectrics located between each of the inter-select-gate electrodes and a neighboring one of the drain-select-level electrodes. The inter-select-gate electrodes are not electrically connected to the drain-select-level electrodes.

Abstract: In an example, a memory array may include a memory cell around at least a portion of a semiconductor. The memory cell may include a gate, a first dielectric stack to store a charge between a first portion of the gate and the semiconductor, and a second dielectric stack to store a charge between a second portion of the gate and the semiconductor, the second dielectric stack separate from the first dielectric stack.

Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a NAND memory device includes a substrate, one or more peripheral devices on the substrate, a plurality of NAND strings above the peripheral devices, a single crystalline silicon layer above and in contact with the NAND strings, and interconnect layers formed between the peripheral devices and the NAND strings. In some embodiments, the NAND memory device includes a bonding interface at which an array interconnect layer contacts a peripheral interconnect layer.

Abstract: An integrated circuit device of an embodiment includes a substrate, a first transistor, an insulation layer, a first contact, a second contact, and a first single crystal portion. The first transistor includes a first gate electrode, and a first drain region, and wherein the first source region and the first drain region are disposed in the substrate. The first contact faces the first gate electrode. The second contact faces a first region that is first one of the first source region and the first drain region. The first single crystal portion is disposed on the first region and convex from a surface of the first region, and is located between the first region and the second contact.

Abstract: Some embodiments include a NAND memory array which has a vertical stack of alternating insulative levels and wordline levels. The wordline levels have terminal ends corresponding to control gate regions. Charge-trapping material is along the control gate regions of the wordline levels, and is spaced from the control gate regions by charge-blocking material. The charge-trapping material along vertically adjacent wordline levels is spaced by intervening regions through which charge migration is impeded. Channel material extends vertically along the stack and is spaced from the charge-trapping material by charge-tunneling material. Some embodiments include methods of forming NAND memory arrays.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Intervening material is formed into the stack laterally-between and longitudinally-along immediately-laterally-adjacent memory block regions. The forming of the intervening material comprises forming pillars laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory-block regions. The pillars individually extend through multiple of each of the first tiers and the second tiers. After forming the pillars, an intervening opening is formed individually alongside and between immediately-longitudinally-adjacent of the pillars. Fill material is formed in the intervening openings. Other embodiments, including structure, are disclosed.

Abstract: Provided is a semiconductor memory device according to an embodiment including: a stacked body including gate electrode layers stacked in a first direction; a semiconductor layer provided in the stacked body and extending in the first direction; and a gate insulating layer provided between the semiconductor layer and at least one of the gate electrode layers, and the gate insulating layer including a first region containing a first oxide including at least one of a hafnium oxide and a zirconium oxide, in which a first length of the at least one of the gate electrode layers in the first direction is larger than a second length of the first region in the first direction.

Abstract: According to one embodiment, a semiconductor memory device includes: a plurality of first interconnect layers including first and second conductors; a second interconnect layer arranged above the first interconnect layers; a third interconnect layer arranged adjacently to the second interconnect layer; a first pillar passing through the first interconnect layers and the second interconnect layer; a second pillar passing through the first interconnect layers and the third interconnect layer; and a third pillar arranged between the second interconnect layer and the third interconnect layer and passing through the first interconnect layers. The second conductor covers a top surface and a bottom surface of the first conductor, and a side surface of an end portion of the first conductor.

Abstract: Some embodiments include apparatuses, and methods of operating the apparatuses. Some of the apparatuses include a data line, a first memory cell string including first memory cells located in different levels of the apparatus, first access lines to access the first memory cells, a first select gate coupled between the data line and the first memory cell string, a first select line to control the first select gate, a second memory cell string including second memory cells located in different levels of the apparatus, second access lines to access the second memory cells, the second access lines being electrically separated from the first access lines, a second select gate coupled between the data line and the second memory cell string, a second select line to control the second select gate, and the first select line being in electrical contact with the second select line.

Abstract: A memory device with a dielectric blocking layer for improving interpoly dielectric breakdown is provided. Embodiments include.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A lower bit line contact and a lower bit line in contact with the lower bit line contact are formed. Lower memory cells are formed above and in contact with the lower bit line. Each lower memory cell includes stacked a phase-change memory (PCM) element, a selector, and electrodes. Parallel word lines in a same plane are formed above and in contact with the lower memory cells. Each word line is perpendicular to the lower bit line. Upper memory cells are formed above and in contact with the word lines. Each upper memory cell includes stacked a PCM element, a selector, and electrodes. An upper bit line is formed above and in contact with the upper memory cells. The upper bit line is perpendicular to each word line. An upper bit line contact is formed above and in contact with the upper bit line.

Abstract: In a semiconductor device including a plurality of memory regions formed of split-gate type MONOS memories, threshold voltages of memory cells are set to different values for each memory region. Memory cells having different threshold voltages are formed by forming a metal film, which is a work function film constituting a memory gate electrode of a memory cell in a data region, and a metal film, which is a work function film constituting a memory gate electrode of a memory cell in a code region, of different materials or different thicknesses.

Abstract: A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.

Abstract: A semiconductor storage device includes a first semiconductor extending above a substrate and including a first part and a second part, a first word line at a first level above the substrate and facing the first part of the first semiconductor, a second word line at the first level above the substrate and facing the second part of the first semiconductor, a first cell transistor including a first area of the first part of the first semiconductor that faces the first word line, and a second cell transistor including a second area of the second part of the first semiconductor that faces the second word line, wherein during an operation of reading data from the first cell transistor, a first voltage that is less than a threshold voltage of the second cell transistor and greater than or equal to zero voltage is applied to the second word line.

Abstract: A semiconductor memory device includes a first semiconductor chip and a second semiconductor chip. Each semiconductor chip of the first and second semiconductor chips may include a cell array region and a peripheral circuit region. The cell array region may include an electrode structure including electrodes sequentially stacked on a body conductive layer and vertical structures extending through the electrode structure and connected to the body conductive layer. The peripheral circuit region may include a residual substrate on the body conductive layer and on which a peripheral transistor is located. A bottom surface of the body conductive layer of the second semiconductor chip may face a bottom surface of the body conductive layer of the first semiconductor chip.

Abstract: A semiconductor memory includes a substrate and an alternating stack of first insulators and first conductors above the substrate. First to third regions are provided in this order along a direction parallel to a surface of the substrate. The alternating stack is in a dummy region at part of each of the first to third regions. Second and third conductors extend in parallel to each other in the direction above a top one of the first conductors. A plurality of first pillars extend through the second conductor. A plurality of second pillars extend through the third conductor. A columnar first contact is provided on the second conductor in the first region, and a columnar second contact is provided on the third conductor in the first region. The second and third conductors are separated from each other in the first and second regions, and connected to each other in the third region.

Abstract: A three-dimensional semiconductor memory device may include a stack including gate electrodes sequentially stacked on a substrate and a vertical structure penetrating the stack. The vertical structure may include a vertical channel portion, a charge storing structure on an outer side surface of the vertical channel portion, and a pad. The pad may include a first pad portion disposed in an internal space surrounded by the vertical channel portion and a second pad portion provided on the first pad portion and extended onto a top surface of the charge storing structure. A portion of the first pad portion may be disposed at the same level as an uppermost electrode of the gate electrodes.

Abstract: A first alternating stack of first insulating layers and first sacrificial material layers with first stepped surfaces is formed over a substrate. A first retro-stepped dielectric material portion is formed on the first stepped surfaces. A second alternating stack of second insulating layers and second sacrificial material layers with second stepped surfaces is formed over the first alternating stack. A second retro-stepped dielectric material portion is formed on the second stepped surfaces. A first conductive via structure is formed through the second retro-stepped dielectric material portion, a bottommost insulating layer of the second alternating stack, and the first retro-stepped dielectric material portion. The sacrificial material layers are replaced with electrically conductive layers.

Abstract: A vertically alternating sequence of insulating layers and sacrificial material layers is formed over a substrate. Line trenches extending along a first horizontal direction are formed through the vertically alternating sequence. The vertically alternating sequence is divided into vertically alternating stacks of insulating strips and sacrificial material strips. Laterally alternating sequences of memory opening fill structures and dielectric pillar structures are formed within the line trenches. Each of the memory opening fill structures includes a respective vertical bit line and memory material portion located between each laterally neighboring pair of the sacrificial material strip and the vertical bit line.

Abstract: A method of manufacturing a semiconductor device includes replacing sacrificial layers with conductive patterns through slits and at least one opening that pass through a stack structure. The stack structure includes interlayer insulating layers and the sacrificial layers. The interlayer insulating layers and the sacrificial layers surround a support and are alternately stacked on each other.

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises alternately stacking a plurality of dielectric layers and a plurality of first semiconductor layers to form a mold structure on a substrate, forming a hole penetrating the mold structure, forming on the substrate a second semiconductor layer filling the hole, and irradiating a laser onto the second semiconductor layer.

Abstract: A split gate device that includes a memory gate and a select gate disposed side by side, a dielectric structure having a first portion disposed between the memory gate and a substrate and a second portion disposed along an inner sidewall of the select gate to separate the select gate from the memory gate, and a spacer formed over the select gate along an inner sidewall of the memory gate. Other embodiments of embedded split gate devices including high voltage and low voltage transistors are also disclosed.

Abstract: A structure of memory cell includes a memory gate structure, disposed on a substrate, wherein the substrate has an indent region aside the memory gate structure. A selection gate structure is disposed on the substrate at the indent region aside the memory gate structure. A first insulation layer is at least disposed between the memory gate structure and selection gate structure.

Abstract: Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The 3D NAND memory device includes an alternating layer stack disposed on a substrate. The alternating layer stack includes a first region including an alternating dielectric stack, and a second region including an alternating conductor/dielectric stack. The memory device further comprises a barrier structure extending vertically through the alternating layer stack to laterally separate the first region from the second region, and multiple through array contacts in the first region each extending vertically through the alternating dielectric stack. At least one through array contact is electrically connected with a peripheral circuit.

Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes a memory cell region and an insulator on a portion of the memory cell region. The semiconductor memory device includes a stress relief material that is in the insulator and is between the memory cell region and another region of the semiconductor memory device.

Abstract: A three-dimensional semiconductor memory device includes a horizontal semiconductor layer on a peripheral logic structure, a cell electrode structure including cell gate electrodes vertically stacked on the horizontal semiconductor layer, ground selection gate electrodes provided between the cell electrode structure and the horizontal semiconductor layer and horizontally spaced apart from each other, each of the ground selection gate electrodes including first and second pads spaced apart from each other with the cell electrode structure interposed therebetween in a plan view, a first through-interconnection structure connecting the first pads of the ground selection gate electrodes to the peripheral logic structure, and a second through-interconnection structure connecting the second pads of the ground selection gate electrodes to the peripheral logic structure.

Abstract: Some embodiments include apparatus and methods having a string of memory cells, a conductive line and a bipolar junction transistor configured to selectively couple the string of memory cells to the conductive line. Other embodiments including additional apparatus and methods are described.

Abstract: In some embodiments, a semiconductor substrate includes first and second source/drain regions which are separated from one another by a channel region. The channel region includes a first portion adjacent to the first source/drain region and a second portion adjacent the second source/drain region. A select gate is spaced over the first portion of the channel region and is separated from the first portion of the channel region by a select gate dielectric. A memory gate is spaced over the second portion of the channel region and is separated from the second portion of the channel region by a charge-trapping dielectric structure. The charge-trapping dielectric structure extends upwardly alongside the memory gate to separate neighboring sidewalls of the select gate and memory gate from one another. An oxide spacer or nitride-free spacer is arranged in a sidewall recess of the charge-trapping dielectric structure nearest the second source/drain region.

Abstract: An organic light emitting display device includes a substrate, a first semiconductor element, a second semiconductor element, an insulation layer structure, and a light emitting structure. The substrate has a first region and a second region that is adjacent to the first region. The insulation layer structure is disposed between a second gate electrode and a second active layer of the second semiconductor element. The insulation layer structure includes a first insulation layer having a first etching rate, a second insulation layer disposed on the first insulation layer and having a second etching rate that is greater than the first etching rate, and a third insulation layer disposed on the second insulation layer and having a third etching rate that is less than the second etching rate in a same etching process. The light emitting structure is disposed on the insulation layer structure.

Abstract: High voltage integrated circuit capacitors are disclosed. In an example arrangement, A capacitor structure includes a semiconductor substrate; a bottom plate having a conductive layer overlying the semiconductor substrate; a capacitor dielectric layer deposited overlying at least a portion of the bottom plate and having a first thickness greater than about 6 um in a first region; a sloped transition region in the capacitor dielectric at an edge of the first region, the sloped transition region having an upper surface with a slope of greater than 5 degrees from a horizontal plane and extending from the first region to a second region of the capacitor dielectric layer having a second thickness lower than the first thickness; and a top plate conductor formed overlying at least a portion of the capacitor dielectric layer in the first region. Methods and additional apparatus arrangements are disclosed.

Abstract: A semiconductor memory device includes: a substrate; a plurality of first semiconductor portions arranged in a first direction intersecting a surface of the substrate; a first gate electrode extending in the first direction, the first gate electrode facing the plurality of first semiconductor portions from a second direction intersecting the first direction; a first insulating portion provided between the first semiconductor portions and the first gate electrode; a first wiring separated from the first gate electrode in the first direction; a second semiconductor portion connected to one end in the first direction of the first gate electrode and to the first wiring; a second gate electrode facing the second semiconductor portion; and a second insulating portion provided between the second semiconductor portion and the second gate electrode.

Abstract: A memory device is described. A first conductive layer extends in a first direction. A second conductive layer extends in the first direction. A third conductive layer extends in a second direction intersecting the first direction. A first oxide region is disposed between the first conductive layer and the third conductive layer and between the second conductive layer and the third conductive layer. A semiconductor region is disposed between the first conductive layer and the first oxide region and between the first conductive layer and the second conductive layer. A second distance between the semiconductor region, which is disposed between the first conductive layer and the second conductive layer, and the third conductive layer, is longer than a first distance between the semiconductor region, which is disposed between the first conductive layer and the first oxide region, and the third conductive layer.

Abstract: A semiconductor structure includes a substrate, conductive layers, dielectric layers, an isolation structure, a first memory structure, and a second memory structure. The conductive layers and the dielectric layers are interlaced and stacked on the substrate. The isolation structure is disposed on the substrate and through the conductive layers and the dielectric layers. Each of the first and second memory structures has a radius of curvature. The first and second memory structures penetrate through the conductive layers and the dielectric layers and are disposed on opposite sidewalls of the isolation structure. Each of the first and second memory structures includes protecting structures and a memory structure layer including a memory storage layer. The protecting structures are disposed at two ends of the memory storage layer, and an etching selectivity to the protecting structures is different from an etching selectivity to the memory storage layer.

Abstract: Some embodiments of the present application are directed towards an integrated circuit (IC). The integrated circuit includes a semiconductor substrate having a peripheral region and a memory cell region separated by an isolation structure. The isolation structure extends into a top surface of the semiconductor substrate and comprises dielectric material. A logic device is arranged on the peripheral region. A memory device is arranged on the memory region. The memory device includes a gate electrode and a memory hardmask over the gate electrode. An anti-dishing structure is disposed on the isolation structure. An upper surface of the anti-dishing structure and an upper surface of the memory hardmask have equal heights as measured from the top surface of the semiconductor substrate.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A first channel structure and a second channel structure each extending vertically through a memory stack including interleaved conductor layers and dielectric layers are formed above a first substrate. A semiconductor connection is formed above the memory stack and in contact with one end of the first channel structure and one end of the second channel structure. The first substrate and a second substrate are joined. The first substrate is removed to expose another end of the first channel structure and another end of the second channel structure. A first semiconductor plug is formed at the another end of the first channel structure, and a second semiconductor plug is formed at the another end of the second channel structure.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of first interconnect layers, first and second memory pillars, and a plurality of first plugs. The plurality of first interconnect layers include a first array region where the first memory pillar penetrates the plurality of first interconnect layers, a second array region where the second memory pillar penetrates the plurality of first interconnect layers, and a coupling region where a plurality of coupling parts respectively coupled to the plurality of first plugs are formed. Along a first direction parallel to the semiconductor substrate, the first array region, the coupling region, and the second array region are arranged in order.

Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.

Abstract: Embodiments of three-dimensional memory device architectures and fabrication methods therefor are disclosed. In an example, the memory device includes a substrate and one or more peripheral devices on the substrate. The memory device also includes one or more interconnect layers and a semiconductor layer disposed over the one or more interconnect layers. A layer stack having alternating conductor and insulator layers is disposed above the semiconductor layer. A plurality of structures extend vertically through the layer stack. A first set of conductive lines are electrically coupled with a first set of the plurality of structures and a second set of conductive lines are electrically coupled with a second set of the plurality of structures different from the first set. The first and second sets of conductive lines are vertically distanced from opposite ends of the plurality of structures.

Abstract: A semiconductor device includes a capacitor structure. The capacitor structure comprises conductive vias extending through openings in a stack of alternating dielectric materials and first conductive materials, each conductive via comprising a second conductive material extending through the openings and another dielectric material on sidewalls of the openings, first conductive lines in electrical communication with a first group of the conductive vias, and second conductive lines in electrical communication with a second group of the conductive vias. Related semiconductor device, electronic systems, and methods are disclosed.

Abstract: A semiconductor memory includes a substrate and an alternating stack of first insulators and first conductors above the substrate. First to third regions are provided in this order along a direction parallel to a surface of the substrate. The alternating stack is in a dummy region at part of each of the first to third regions. Second and third conductors extend in parallel to each other in the direction above a top one of the first conductors. A plurality of first pillars extend through the second conductor. A plurality of second pillars extend through the third conductor. A columnar first contact is provided on the second conductor in the first region, and a columnar second contact is provided on the third conductor in the first region. The second and third conductors are separated from each other in the first and second regions, and connected to each other in the third region.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures are formed through the alternating stack. Drain-select-level trenches through an upper subset of the sacrificial material layers, and backside trenches are formed through each layer of the alternating stack. Backside recesses are formed by removing the sacrificial material layers. A first electrically conductive material and a second electrically conductive material are sequentially deposited in the backside recesses and the drain-select-level trenches. Portions of the second electrically conductive material and the first electrically conductive material may be removed by at least one anisotropic etch process from the drain-select-level trenches to provide drain-select-level electrically conductive layers as multiple groups that are laterally spaced apart and electrically isolated from one another by cavities within the drain-select-level trenches.

Abstract: Disclosed is a semiconductor memory device comprising a peripheral circuit structure on a first substrate, a second substrate on the peripheral circuit structure, a stack structure on the second substrate and comprising a plurality of gate electrodes, a through dielectric pattern penetrating the stack structure and the second substrate, and a vertical supporter on a top surface of the second substrate and vertically extending from the top surface of the second substrate and penetrating the stack structure and the through dielectric pattern.

Abstract: According to one embodiment, a source layer includes a semiconductor layer including an impurity. A stacked body includes a plurality of electrode layers stacked with an insulator interposed. A gate layer is provided between the source layer and the stacked body. The gate layer is thicker than a thickness of one layer of the electrode layers. A semiconductor body extends in a stacking direction of the stacked body through the stacked body and the gate layer. The semiconductor body further extends in the semiconductor layer where a side wall portion of the semiconductor body contacts the semiconductor layer. The semiconductor body does not contact the electrode layers and the gate layer.

Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.