Abstract: A semiconductor device includes; an active pattern on a substrate, gate structures in which each gate structure includes a gate electrode intersecting the active pattern and a gate capping pattern on the gate electrode, a source/drain pattern disposed on the active pattern between adjacent gate structures, a lower active contact connected to the source/drain pattern, an etching stop film extending along an upper surface of the lower active contact without contacting an upper surface of the gate capping pattern, and an upper active contact connected to the lower active contact, wherein a bottom surface of the upper active contact is lower than the upper surface of the gate capping pattern.

Abstract: Some embodiments relate to a semiconductor structure including a semiconductor substrate, and n interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a dielectric structure and a plurality of metal lines that are stacked over one another in the dielectric structure. A through substrate via (TSV) extends through the semiconductor substrate to contact a metal line of the plurality of metal lines. A protective sleeve is disposed along outer sidewalls of the TSV and separates the outer sidewalls of the TSV from the dielectric structure of the interconnect structure.

Abstract: A semiconductor device capable of improving a device performance and a reliability is provided. The semiconductor device comprising a gate structure including a gate electrode on a substrate, a source/drain pattern on a side face of the gate electrode, on the substrate and, a source/drain contact connected to the source/drain pattern, on the source/drain pattern, a gate contact connected to the gate electrode, on the gate electrode, and a wiring structure connected to the source/drain contact and the gate contact, on the source/drain contact and the gate contact, wherein the wiring structure includes a first via plug, a second via plug, and a wiring line connected to the first via plug and the second via plug, the first via plug has a single conductive film structure, and the second via plug includes a lower via filling film, and an upper via filling film on the lower via filling film.

Abstract: A semiconductor device comprises a fin disposed on a substrate, a source/drain feature disposed over the fin, a silicide layer disposed over the source/drain feature, a seed metal layer disposed over the silicide layer and wrapping around the source/drain feature, and a metal layer disposed on the silicide layer, where the metal layer contacts the seed metal layer.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain pattern on the substrate, the source/drain pattern being at a side of the gate structure, a source/drain contact filling on and connected to the source/drain pattern, an entire top surface of the source/drain contact filling being lower than a top surface of the gate structure, and a connection contact directly on and connected to the source/drain contact filling, a top surface of the connection contact being higher than the top surface of the gate structure.

Abstract: Methods herein may include forming a gate dielectric within a set of trenches in a stack of layers. A first work function (WF) metal may be formed atop the gate dielectric, and a capping layer may be formed over the first WF metal using an angled ion implant deposition, the capping layer extending across the trenches.

Abstract: Systems, apparatuses, and methods related to reduction of crystal growth resulting from annealing a conductive material are described. An example apparatus includes a conductive material selected to have an electrical resistance that is reduced as a result of annealing. A stabilizing material may be formed over a surface of the conductive material. The stabilizing material may be selected to have properties that include stabilization of the reduced electrical resistance of the conductive material and reduction of a degree of freedom of crystal growth relative to the surface resulting from recrystallization of the conductive material during the annealing.

Abstract: A semiconductor device comprising a first and second doped semiconductor layer wherein the first layer is a monosilicon layer and the second layer is a polysilicon layer, an oxide layer covering the first and second layer, and an interconnect which electrically connects the first and second layer comprises a metal alloy which has a first part in contact with the first layer and a second part in contact with the second layer, wherein a part of the metal alloy between the first and the second part crosses over a sidewall of the second layer; at least one electronic component is formed in the first and/or second layer; the semiconductor device moreover comprises a stoichiometric passivation layer which covers the first and second layer and the oxide layer.

Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a first channel, a first source and a first drain; a second channel, a second source and a second drain; and a gate structure disposed over the first and second channels. The gate structure includes a gate dielectric layer and a gate electrode layer. The first source includes a first crystal semiconductor layer and the second source includes a second crystal semiconductor layer. The first source and the second source are connected by an alloy layer made of one or more Group IV element and one or more transition metal elements. The first crystal semiconductor layer is not in direct contact with the second crystal semiconductor layer.

Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.

Abstract: A system and method for determining and applying characterization correlation curves for aging effects on an organic light organic light emitting device (OLED) based pixel is disclosed. A first stress condition is applied to a reference pixel having a drive transistor and an OLED. An output voltage based on a reference current is measured periodically to determine an electrical characteristic of the reference pixel under the first predetermined stress condition. The luminance of the reference pixel is measured periodically to determine an optical characteristic of the reference pixel. A characterization correlation curve corresponding to the first stress condition including the determined electrical and optical characteristic of the reference pixel is stored. Characterization correlation curves for other predetermined stress conditions are also stored based on application of the predetermined stress conditions on other reference pixels.

Abstract: In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR. An n-type semiconductor layer NR1 is formed over the semiconductor layer EP. The semiconductor layer PR, the semiconductor layer EP, and the semiconductor layer NR1 respectively configure part of a photoreceiver. A cap layer of a material different from that of the semiconductor layer EP is formed over the semiconductor layer EP, and a silicide layer, which is a reaction product of a metal and the material included in the cap layer, is formed within the cap layer. A plug having a barrier metal film BM1 is formed over the cap layer through the silicide layer. Here, a reaction product of the metal and the material included in the semiconductor layer NR1 is not formed within the semiconductor layer NR1.

Abstract: A semiconductor structure includes a fin active region extruded from a semiconductor substrate; and a gate stack disposed on the fin active region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. The gate dielectric layer includes a first dielectric material. The semiconductor structure further includes a dielectric gate of a second dielectric material disposed on the fin active region. The gate dielectric layer extends from a sidewall of the gate electrode to a sidewall of the dielectric gate. The second dielectric material is different from the first dielectric material in composition.

Abstract: A semiconductor device includes a plurality of semiconductor layers formed on a plurality of fin structures, an epitaxial layer formed on the plurality of fin structures and on a sidewall of the plurality of semiconductor layers, a gate structure formed on the plurality of semiconductor layers, and a wrap around contact formed on the epitaxial layer.

Abstract: After forming a material stack including a gate dielectric, a work function metal and a cobalt gate electrode in a gate cavity formed by removing a sacrificial gate structure, the cobalt gate electrode is recessed by oxidizing the cobalt gate electrode to provide a cobalt oxide layer on a surface of the cobalt gate electrodes and removing the cobalt oxide layer from the surface of the cobalt gate electrodes by a chemical wet etch. The oxidation and oxide removal steps can be repeated until the cobalt gate electrode is recessed to any desired thickness. The work function metal can be recessed after the recessing of the cobalt gate electrode is completed or during the recessing of the cobalt gate electrode.

Abstract: A method is presented for employing contact over active gate to reduce parasitic capacitance. The method includes forming high-k metal gates (HKMGs) between stacked spacers, the stacked spacers including a low-k dielectric lower portion and a sacrificial upper portion, forming a first dielectric over the HKMGs, forming first contacts to source/drain of a transistor between the HKMGs, and forming a second dielectric over the first contacts. The method further includes selectively removing the first dielectric to form second contacts to the HKMGs, selectively removing the second dielectric to form third contacts on top of the first contacts, removing the sacrificial upper portion of the stacked spacers, and depositing a third dielectric that pinches off the remaining first and second dielectrics to form air-gaps between the first contacts and the HKMGs.

Abstract: A method of making a semiconductor device includes forming a first source/drain trench and a second source/drain trench over a first and second source/drain region, respectively; forming a first silicon dioxide layer in the first source/drain trench and a second silicon dioxide layer in the second source/drain trench; forming a first source/drain contact over the first source/drain region, the first source/drain contact including a first tri-layer contact disposed between the first silicon dioxide layer and a first conductive material; and forming a second source/drain contact over the second source/drain region, the second source/drain contact including a second tri-layer contact disposed between the second silicon dioxide layer and a second conductive material; wherein the first tri-layer contact includes a first metal oxide layer in contact with the first silicon dioxide layer, and the second tri-layer contact includes a second metal oxide layer in contact with the second silicon dioxide layer.

Abstract: Methods herein may include forming trenches in a stack of layers atop a substrate, and forming a gate dielectric within the trenches. Methods may further include forming a first work function (WF) metal atop the gate dielectric, and forming a capping layer over the first WF metal using an angled ion implant deposition, the capping layer extending across the trenches. The first WF metal may be removed from just a first trench of the trenches, and a second WF metal is then formed over the stack of layers, wherein the second WF metal is formed atop the gate dielectric within the first trench. An angled ion etch may then be performed to recess the gate dielectric and the second WF metal within the first trench, and to recess the gate dielectric and the first WF metal within a second trench. A gate metal may then be formed within the trenches.

Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.

Abstract: A semiconductor device includes a substrate having a device isolation region defining an active region. An active fin is positioned in the active region. A gate structure overlaps the active fin along a direction orthogonal to an upper surface of the substrate and extends in a second direction intersecting the first direction. A source/drain region is disposed on the active fin. A contact plug is connected to the source/drain region and overlaps the active fin. A metal via is positioned at a first level above the substrate higher than an upper surface of the contact plug and spaced apart from the active fin. A metal line is positioned at a second level above the substrate, higher than the first level and connected to the metal via. A via connection layer extends from an upper portion of the contact plug and is connected to the metal via.

Abstract: Semiconductor devices with airgap spacers and methods of forming the same include forming a lower spacer that defines a gate region. A sacrificial upper spacer is formed directly above the lower spacer. A gate stack is formed in the gate region. The sacrificial upper spacer is etched away to form an upper spacer opening. An airgap spacer is formed in the upper spacer opening. The airgap spacer includes a dielectric material that encapsulates an internal void.

Abstract: A semiconductor device includes a substrate, a metal gate on the substrate, and a first inter-layer dielectric (ILD) layer around the metal gate. A top surface of the metal gate is lower than a top surface of the ILD layer thereby forming a recessed region atop the metal gate. A mask layer is disposed in the recessed region. A void is formed in the mask layer within the recessed region. A second ILD layer is disposed on the mask layer and the first ILD layer. A contact hole extends into the second ILD layer and the mask layer. The contact hole exposes the top surface of the metal gate and communicates with the void. A conductive layer is disposed in the contact hole and the void.

Abstract: A method may include providing a patterned feature extending from a substrate plane of a substrate, the patterned feature including a semiconductor portion and a coating in an unhardened state extending along a top region and along sidewall regions of the semiconductor portion; implanting first ions into the coating, the first ions having a first trajectory along a perpendicular to the substrate plane, wherein the first ions form a etch-hardened portion comprising a hardened state disposed along the top region; and directing a reactive etch using second ions at the coating, the second ions having a second trajectory forming a non-zero angle with respect to the perpendicular, wherein the reactive etch removes the etch-hardened portion at a first etch rate, wherein the first etch rate is less than a second etch rate when the second ions are directed in the reactive etch to the top portion in the unhardened state.

Abstract: A system and method for determining and applying characterization correlation curves for aging effects on an organic light organic light emitting device (OLED) based pixel is disclosed. A first stress condition is applied to a reference pixel having a drive transistor and an OLED. An output voltage based on a reference current is measured periodically to determine an electrical characteristic of the reference pixel under the first predetermined stress condition. The luminance of the reference pixel is measured periodically to determine an optical characteristic of the reference pixel. A characterization correlation curve corresponding to the first stress condition including the determined electrical and optical characteristic of the reference pixel is stored. The stress condition of an active pixel is determined and a compensation voltage is determined by correlating the stress condition of the active pixel with curves of the predetermined stress conditions.

Abstract: Disclosed are integrated circuit (IC) structures and formation methods. In the methods, a gate with a sacrificial gate cap and a sacrificial gate sidewall spacer is formed on a channel region. The cap and sidewall spacer are removed, creating a cavity with a lower portion between the sidewalls of the gate and adjacent metal plugs and with an upper portion above the lower portion and the gate. A first dielectric layer is deposited, forming an air-gap in the lower portion and lining the upper portion. A second dielectric layer is deposited, filling the upper portion. During formation of a gate contact opening (optionally over an active region), the second dielectric layer is removed and the first dielectric layer is anisotropically etched, thereby exposing the gate and creating a dielectric spacer with a lower air-gap segment and an upper solid segment. Metal deposited into the opening forms the gate contact.

Abstract: Semiconductor devices with airgap spacers and methods of forming the same include forming a lower spacer that defines a gate region. A sacrificial upper spacer is formed directly above the lower spacer. A gate stack is formed in the gate region. The sacrificial upper spacer is etched away to form an upper spacer opening. An airgap spacer is formed in the upper spacer opening. The airgap spacer includes a dielectric material that encapsulates an internal void.

Abstract: A system and method for determining and applying characterization correlation curves for aging effects on an organic light organic light emitting device (OLED) based pixel is disclosed. A first stress condition is applied to a reference pixel having a drive transistor and an OLED. An output voltage based on a reference current is measured periodically to determine an electrical characteristic of the reference pixel under the first predetermined stress condition. The luminance of the reference pixel is measured periodically to determine an optical characteristic of the reference pixel. A characterization correlation curve corresponding to the first stress condition including the determined electrical and optical characteristic of the reference pixel is stored. The stress condition of an active pixel is determined and a compensation voltage is determined by correlating the stress condition of the active pixel with curves of the predetermined stress conditions.

Abstract: The present invention provides an amorphous silicon semiconductor TFT backboard structure, which includes a semiconductor layer (4) that has a multi-layer structure including a bottom amorphous silicon layer (41) in contact with a gate insulation layer (3), an N-type heavily-doped amorphous silicon layer (42) in contact with a source electrode (6) and a drain electrode (7), at least two N-type lightly-doped amorphous silicon layers (43) sandwiched between the bottom amorphous silicon layer (41) and the N-type heavily-doped amorphous silicon layer (42), a first intermediate amorphous silicon layer (44) separating every two adjacent ones of the lightly-doped amorphous silicon layers (43), and a second intermediate amorphous silicon layer (45) separating the N-type heavily-doped amorphous silicon layer (42) from the one of the lightly-doped amorphous silicon layers (43) that is closest to the N-type heavily-doped amorphous silicon layer (42).

Abstract: A phase-change memory cell having a reduced electrode-chalcogenide interface resistance and a method for making the phase-change memory cell are disclosed: An interface layer is formed between an electrode layer and a chalcogenide layer that and provides a reduced resistance between the chalcogenide-based phase-change memory layer and the electrode layer. Exemplary embodiments provide that the interface layer comprises a tungsten carbide, a molybdenum carbide, a tungsten boride, or a molybdenum boride, or a combination thereof. In one exemplary embodiment, the interface layer comprises a thickness of between about 1 nm and about 10 nm.

Abstract: Semiconductor devices with airgap spacers and methods of forming the same include forming a lower spacer that defines a gate region. A sacrificial upper spacer is formed directly above the lower spacer. A gate stack is formed in the gate region. The sacrificial upper spacer is etched away to form an upper spacer opening. An airgap spacer is formed in the upper spacer opening. The airgap spacer includes a dielectric material that encapsulates an internal void.

Abstract: A method for fabricating a semiconductor device comprises forming a dummy gate on a substrate; forming spacers at opposing sides of the dummy gate; depositing a sacrificial interlayer dielectric over the dummy gate; planarizing the interlayer dielectric to expose the dummy gate; removing the dummy gate; forming a replacement metal gate with a protective cap between the spacers and on the substrate to replace the removed dummy gate; removing the sacrificial interlayer dielectric; siliciding exposed areas of the substrate adjacent to the replacement metal gate; depositing a final interlayer dielectric over the replacement metal gate and the exposed silicided areas; and forming vias through the final interlayer dielectric to the silicided areas.

Abstract: A phase-change memory cell having a reduced electrode-chalcogenide interface resistance and a method for making the phase-change memory cell are disclosed: An interface layer is formed between an electrode layer and a chalcogenide layer that and provides a reduced resistance between the chalcogenide-based phase-change memory layer and the electrode layer. Exemplary embodiments provide that the interface layer comprises a tungsten carbide, a molybdenum carbide, a tungsten boride, or a molybdenum boride, or a combination thereof. In one exemplary embodiment, the interface layer comprises a thickness of between about 1 nm and about 10 nm.

Abstract: An approach to forming a semiconductor structure with improved negative bias temperature instability includes forming an interfacial layer on a semiconductor substrate with an nFET and a pFET. The approach includes depositing a gate dielectric layer on the interfacial layer. Additionally, the approach includes an nFET work function metal layer deposited on the interfacial layer. Additionally, the approach includes removing the nFET work function metal from an area above the pFET and depositing a pFET work function metal layer on a portion of the exposed gate dielectric layer where the portion of the exposed gate dielectric layer is over the pFET. Furthermore, the approach includes depositing a gate metal on the pFET work function metal layer where the gate metal is deposited in an environment with a fluorine containing gas followed by an anneal in a reducing environment.

Abstract: A wafer processing method includes a first correction step of measuring a distance “a” between a first cut groove previously formed by a first cutting unit and a division line for the next cut groove, and correcting an actual index amount by using a deviation “b” of the first cutting unit equivalent to the difference between the distance “a” and a proper index amount of the first cutting unit, and a second correction step of forming a measurement groove by using a second cutting unit along the division line for the next cut groove, measuring a distance “c” between the first cut groove and the measurement groove, and correcting an actual index amount of the second cutting unit by using a deviation “d” equivalent to the difference between the distance “c” and a proper index amount of the second cutting unit during the cutting step.

Abstract: A field effect transistor structure having a semiconductor having a source region, a drain region, and a gate contact region disposed between the source region and the drain region; and a gate electrode having a stem section extending from a top section of the gate electrode to, and in Schottky contact with, the gate contact region. The stem section has an upper portion terminating at the top portion of the gate electrode and a bottom portion narrower than the upper portion, the bottom portion terminating at the gate contact region. The bottom portion of the stem has a step between the upper portion of the stem section and the bottom portion of the stem section in only one side of the stem section. The step of the stem section provides an asymmetric field plate for the field effect transistor.

Abstract: There is set forth herein a method of fabricating a semiconductor structure, the method including forming a conductive metal layer over a source/drain region. The conductive metal layer in one aspect can prevent gouging of a source/drain region during removal of materials above a source/drain region. The conductive metal layer in one aspect can be used to pattern an air spacer for reduced parasitic capacitance. The conductive metal layer in one aspect can reduce a contact resistance between a source/drain region and a contact above a source/drain region.

Abstract: A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.

Abstract: A semiconductor device and methods for small trench patterning are disclosed. The device includes a plurality of gate structures and sidewall spacers, and an etch buffer layer disposed over the sidewall spacers. The etch buffer layer includes an overhang component disposed on the upper portion of the sidewall spacers with an edge that extends laterally. The width between the edges of adjacent overhang components is narrower than the width between adjacent sidewall spacers.

Abstract: A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.

Abstract: A semiconductor structure is provided that includes a semiconductor substrate having a plurality of gate stacks located thereon. Each gate stack includes a high k gate dielectric layer, a work function metal layer and a conductive metal. A spacer is located on sidewalls of each gate stack and a self-aligned dielectric liner is present on an upper surface of each spacer. A bottom surface of each self-aligned dielectric liner is present on an upper surface of a semiconductor metal alloy. A contact metal is located between neighboring gate stacks and is separated from each gate stack by the self-aligned dielectric liner. The structure also includes another contact metal having a portion that is located on and in direct contact with an upper surface of the contact metal and another portion that is located on and in direct contact with the conductive metal of one of the gate stacks.

Abstract: A semiconductor memory device includes a substrate having thereon a memory array region and a periphery circuit region. A first dielectric layer covers the memory array region and the periphery circuit region on the substrate. A second dielectric layer covers the memory array region and the periphery circuit region on the first dielectric layer. At least a capacitor structure is provided in the memory array region. The capacitor structure includes an electrode material layer embedded in the second dielectric layer. The semiconductor memory device further includes a contact structure comprising the electrode material layer.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.

Abstract: A semiconductor device includes a substrate, an epi-layer, an etch stop layer, an interlayer dielectric (ILD) layer, a silicide layer cap and a contact plug. The substrate has a first portion and a second portion neighboring to the first portion. The etch stop layer is disposed on the second portion. The ILD layer is disposed on the etch stop layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the ILD layer.

Abstract: The present disclosure provides a semiconductor device, which includes a compensation area which includes p-regions and n-regions, and a plurality of transistor cells on the compensation area. Each of the plurality of transistor cells includes a source region, a body region, a gate and an interlayer dielectric, and a source metallization layer arranged on the interlayer dielectric. The semiconductor device further includes an additional n-doping region that is provided on top of the n-regions between two neighboring body regions, and a source plug which fills a contact hole formed through the interlayer dielectric between the source and body region and the source metallization layer, so as to electrically connect the source and body region and the source metallization layer.

Abstract: An iridium interfacial stack (“IrIS”) and a method for producing the same are provided. The IrIS may include ordered layers of TaSi2, platinum, iridium, and platinum, and may be placed on top of a titanium layer and a silicon carbide layer. The IrIS may prevent, reduce, or mitigate against diffusion of elements such as oxygen, platinum, and gold through at least some of its layers.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, an integrated circuit includes a semiconductor substrate. A first fin and a second fin are adjacent to each other extending from the semiconductor substrate. The first fin has a first upper section and the second fin has a second upper section. A first epi-portion overlies the first upper section and a second epi-portion overlies the second upper section. A first silicide layer overlies the first epi-portion and a second silicide layer overlies the second epi-portion. The first and second silicide layers are spaced apart from each other to define a lateral gap. A dielectric spacer is formed of a dielectric material and spans the lateral gap. A contact-forming material overlies the dielectric spacer and portions of the first and second silicide layers that are laterally above the dielectric spacer.

Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.

Abstract: In one aspect, a method of fabricating a metal silicide includes the following steps. A semiconductor material selected from the group consisting of silicon and silicon germanium is provided. A metal(s) is deposited on the semiconductor material. A first anneal is performed at a temperature and for a duration sufficient to react the metal(s) with the semiconductor material to form an amorphous layer including an alloy formed from the metal(s) and the semiconductor material, wherein the temperature at which the first anneal is performed is below a temperature at which a crystalline phase of the alloy is formed. An etch is used to selectively remove unreacted portions of the metal(s). A second anneal is performed at a temperature and for a duration sufficient to crystallize the alloy thus forming the metal silicide. A device contact and a method of fabricating a FET device are also provided.

Abstract: A transistor includes a substrate, a gate over the substrate, a source and a drain over the substrate on opposite sides of the gate, a first silicide on the source, and a second silicide on the drain. Only one of the drain or the source has an unsilicided region adjacent to the gate to provide a resistive region.