Means To Reduce Sensitivity To Physical Deformation Patents (Class 257/420)
  • Patent number: 6632698
    Abstract: A microelectromechanical device (MEMD) defined within a substrate of a MEMS includes a mass element defining an area of interest. The device also includes a support beam supporting the mass element in spaced-apart relationship from the substrate. The support beam includes a first beam member defined by a first fixed end connected to the substrate, and a first free end connected to the mass element. The support beam further includes a second beam member defined by a second fixed end connected to the substrate, and a second free end connected to the mass element. The beam members are in spaced-apart relationship from one another. A first cross member connects the first beam member and the second beam member. Preferably, the support beam includes a plurality of cross members. Two such support beams can be used to support a mass element in a MEMD in a bridge configuration.
    Type: Grant
    Filed: August 7, 2001
    Date of Patent: October 14, 2003
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventor: Thomas W. Ives
  • Publication number: 20030166310
    Abstract: A mechanical microstructure including a deformable first layer overhanging a second layer and defining a cavity set back from an external face of the deformable first layer and having an abutment stud projecting into the cavity, in which a wire is connected to a portion of an internal face of the deformable first layer. The portion of the first layer is opposite a bottom area of the cavity into which the abutment stud projects, but the abutment stud remains at a distance from the deformable first layer. A method of producing the mechanical microstructure is also disclosed.
    Type: Application
    Filed: December 27, 2002
    Publication date: September 4, 2003
    Inventor: Stephane Caplet
  • Patent number: 6614064
    Abstract: The present invention is generally directed to a transistor having a gate stack comprised of a metal, and a method of making same. In one illustrative embodiment, the transistor is comprised of a gate stack comprised of a gate insulation layer positioned above a semiconducting substrate, a layer of silicon positioned above the gate insulation layer, a layer of adhesion material positioned above the layer of silicon, a layer of metal positioned above the layer of adhesion material, and a plurality of source/drain regions formed in the substrate adjacent the gate stack.
    Type: Grant
    Filed: January 30, 2002
    Date of Patent: September 2, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Paul R. Besser, William S. Brennan
  • Patent number: 6597048
    Abstract: A process and apparatus for injecting electrostatic charges into opposing elements of MEMS structures to produce repulsing forces between the elements. These forces tend to produce controlled spacing between components to prevent sticking and to provide friction-free relative movement.
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: July 22, 2003
    Assignee: Cornell Research Foundation
    Inventor: Edwin C. Kan
  • Publication number: 20030132493
    Abstract: A high-vacuum packaged microgyroscope for detecting the inertial angular velocity of an object and a method for manufacturing the same. In the high-vacuum packaged microgyroscope, a substrate with an ASIC circuit for signal processing is mounted onto another substrate including a suspension structure of a microgyroscope in the form of a flip chip. Also, the electrodes of the suspension structure and the ASIC circuit can be exposed to the outside through polysilicon interconnection interposed between double passivation layers. The short interconnection between the suspension structure and the ASIC circuit can reduce the device in size and prevents generation of noise, thereby increasing signal detection sensitivity. In addition, by sealing the two substrates at low temperatures, for example, at 363 to 400° C. using co-melting reaction between metal, for example, Au, and Si in a vacuum, the degree of vacuum in the device increases.
    Type: Application
    Filed: March 14, 2003
    Publication date: July 17, 2003
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seok-Jin Kang, Youn-Il Ko, Ho-Suk Kim
  • Publication number: 20030127670
    Abstract: A contactless acceleration switch detects a threshold acceleration value when a mass attached to a spring, moves towards a source, a drain, and a threshold adjustment channel implanted in a substrate layer. The threshold adjustment channel is located between the source and the drain. The implanted area is located between insulator posts. A spring is attached to the insulator posts. A mass is held above the implanted area by the spring. When the threshold acceleration value is detected, the mass moves towards the substrate layer. The threshold adjustment channel then inverts causing current to flow between the source and the drain, providing an electrical signal indicating that the threshold acceleration value has been reached.
    Type: Application
    Filed: January 7, 2002
    Publication date: July 10, 2003
    Applicant: Honeywell International Inc.
    Inventor: Joon-Won Kang
  • Patent number: 6570298
    Abstract: A vibration control device 1 in accordance with the present invention is provided with a liquid lever mechanism 4 which has an action member 5, a liquid chamber 6 and a driving plate 7, and is used for enlarging a displacement, a piezo-actuator 2 which can be displaced in a direction so as to change the volume of the liquid chamber 6, and a rubber vibration isolator 3 which is placed between the liquid lever mechanism 4 and the piezo-actuator 2 in series therewith. This vibration control device 1 has a low natural frequency so that it has a superior passive vibration-blocking performance at high-frequency bands, while maintaining a superior active vibration-blocking performance at low-frequency bands, and also makes it possible to achieve a small size.
    Type: Grant
    Filed: May 9, 2001
    Date of Patent: May 27, 2003
    Assignee: Tokkyokiki Co., Ltd.
    Inventor: Masashi Yasuda
  • Publication number: 20030075794
    Abstract: A MEMS capping method and apparatus uses a cap structure on which is formed a MEMS cavity, a cut capture cavity, and a cap wall. The cap wall is essentially the outer wall of the MEMS cavity and the inner wall of the cut capture cavity. The cap structure is bonded onto a MEMS structure such that the MEMS cavity covers protected MEMS components. The cap structure is trimmed by cutting through to the cut capture cavity from the top of the cap structure without cutting all the way through to the MEMS structure.
    Type: Application
    Filed: October 23, 2001
    Publication date: April 24, 2003
    Inventors: Lawrence E. Felton, Peter W. Farrell, Jing Luo, David J. Collins, John R. Martin, William A. Webster
  • Patent number: 6552404
    Abstract: Electro-mechanical structures and methods for forming same are disclosed. The structures are integratable onto an integrated circuit. The structures have a deformeable element formed in a plane substantially perpendicular to the substrate of the integrated circuit.
    Type: Grant
    Filed: April 17, 2001
    Date of Patent: April 22, 2003
    Assignee: Analog Devices, Inc.
    Inventors: Eamon Hynes, John Wynne
  • Patent number: 6548859
    Abstract: The object of the present invention is to suppress a short channel effect on a threshold voltage. A channel region 5, a pair of source-drain regions and an isolating film 2 having a trench isolation structure are selectively formed in a main surface of a semiconductor substrate 1. An upper surface of the isolating film 2 recedes to be lower than an upper surface of the channel region 5 in a trench portion adjacent to side surfaces of the channel region 5 and to be almost on a level with the upper surface of the channel region 5 in other regions. Consequently, a part of the side surfaces of the channel region 5 as well as the upper surface thereof are covered by a gate electrode 4 with a gate insulating film 3 interposed therebetween. A channel width W of the channel region 5 is set to have a value which is equal to or smaller than a double of a maximum channel depletion layer width Xdm.
    Type: Grant
    Filed: August 28, 2001
    Date of Patent: April 15, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Shigeto Maegawa
  • Patent number: 6534838
    Abstract: A release layer composed of AlGaAs, a strain layer, a strain compensation layer composed of an InGaAs, and a component layer are formed on a GaAs substrate. The component layer includes a DBR film. A recess for defining a bent region is formed in the component layer. The component layer, the strain compensation layer, the strain layer, and the release layer are removed in an approximately U shape, thereby forming a groove. The release layer under the strain layer is selectively removed. The strain layer is bent at a region below the recess so as to relax strain caused by the difference in the lattice constant between the InGaAs layer and the GaAs layer, and the component layer stands perpendicularly to the GaAs substrate.
    Type: Grant
    Filed: September 7, 2001
    Date of Patent: March 18, 2003
    Assignee: ATR Advanced Telecommunications Research Institute International
    Inventor: Pablo O. Vaccaro
  • Patent number: 6514781
    Abstract: A method and apparatus for maintaining the state of a MEMS device in the event of a power failure are disclosed. The apparatus and method may be used with a MEMS device generally having one or more MEMS elements moveably coupled to a substrate that uses electrostatic clamping force to sustain the state of the MEMS element. According to the method, a capacitive or other charge-storing circuit is coupled between a clamping surface and an electrical ground. During normal operation, a clamping voltage is applied between the clamping surface and at least one MEMS element to retain the at least one MEMS element against the clamping surface. In the event of a power failure, the source of the clamping voltage and other circuit paths to ground are isolated from the clamping surface. The charge-storing circuit maintains an electric charge on the clamping surface.
    Type: Grant
    Filed: July 7, 2001
    Date of Patent: February 4, 2003
    Assignee: Onix Microsystems, Inc.
    Inventors: Mark W. Chang, Scott D. Dalton, Michael J. Daneman, Timothy Beerling, Stephen F. Panyko, Gary M. Zalewski
  • Patent number: 6509620
    Abstract: A microelectromechanical system (MEMS) device is disclosed for determining the position of a mover. The MEMS device has a bottom layer connected to a mover layer. The mover layer is connected to a mover by flexures. The mover moves relative to the mover layer and the bottom layer. The flexures urge the mover back to an initial position of mechanical equilibrium. The flexures include coupling blocks to control movement of the mover. The MEMS device determines the location of the mover by determining the capacitance between mover electrodes located on the coupling blocks of the flexures and counter electrodes located on an adjacent layer. The coupling block moves according to a determinable relationship with the mover. As the coupling block moves, the capacitance between the mover electrode and the counter electrode changes. A capacitance detector analyzes the capacitance between the electrodes and determines the position of the mover.
    Type: Grant
    Filed: May 31, 2001
    Date of Patent: January 21, 2003
    Assignee: Hewlett-Packard Company
    Inventors: Peter G. Hartwell, Donald J. Fasen
  • Patent number: 6495893
    Abstract: A micro-mechanical actuator is disclosed for actuating an object in a micro-electro-mechanical system. One end of the object is flexibly connected a substrate, and another end is flexibly connected to an auxiliary lever which is further connected to an actuating force generator. The auxiliary lever receives an actuating force generated from the actuating force generator to perform a levering operation about a fulcrum. The position of the fulcrum allows an portion of the auxiliary lever connected to the object has a shift larger than a shift of another portion of the auxiliary lever connected to the actuating force generator in response to the actuating force.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: December 17, 2002
    Inventors: Hung-Yi Lin, Weileun Fang
  • Patent number: 6483160
    Abstract: A micromechanical enclosure suitable for micromechanical sensors, particularly acceleration sensors in the field of automotive vehicles, includes a micromechanical structure on a substrate, a conductor track layer connected to the micromechanical structure on the main surface of the substrate, a cover that covers a part of the main surface of the substrate, and a level compensation layer arranged next to the conductor track layer beneath the contact area during the manufacture of the wafer. A planarizing layer, which forms a level surface, may additionally be applied above this, to form a level area on the substrate which can easily be joined to a level area of the cover by means of a metallic wafer bond. This achieves small overall dimensions and avoids a glass frit bond.
    Type: Grant
    Filed: July 19, 2001
    Date of Patent: November 19, 2002
    Assignees: DaimlerChrysler AG, Temic Telefunken microelectronic GmbH
    Inventors: Albert Engelhardt, Bernhard Hartmann, Ulrich Prechtel, Helmut Seidel
  • Publication number: 20020149072
    Abstract: The invention aims at suppressing an amount of deformation of a central portion of a movable part in a micro-miniature semiconductor actuator. A boundary portion (10) is provided between a central portion and an edge of a movable part (3), which is axially supported in a rotatable manner by torsion bars (4, 4) of an actuator (1), the boundary portion (10) being for suppressing transmission of a warp due to an influence of air resistance at the edge of the movable part (3) or moment of inertia, or heat generated by a driving force generating portion (6) at the edge of the movable part, to a central portion of the movable part, to suppress deformation of the central portion of the movable part.
    Type: Application
    Filed: May 30, 2002
    Publication date: October 17, 2002
    Applicant: The Nippon Signal Co., Ltd.
    Inventors: Kiyotaka Mutoh, Yuzuru Ueda, Norihiro Asada
  • Publication number: 20020149071
    Abstract: A MEMS device having flexure elements with non-linear restoring force. The MEMS device has a substrate, support elements formed on the substrate, a moveable element positioned over the substrate by the support elements to move relative substrate, flexure elements for elastically suspending the moveable element on the support elements, a driving element for moving the moveable element, and repulsive elements for increasing the repulsive force of the flexure elements when the flexure elements supporting the moveable element are resiliently deformed during movement of the moveable element. In a MEMS device, the range of controlling the position of a moveable element is extended if flexure elements having non-linear repulsive force control the position of the moveable element. A restoring force is obtained by flexure elements having non-linear repulsive force and the moveable element is prevented from sticking. The MEMS device has much higher reliability than a general MEMS device.
    Type: Application
    Filed: February 15, 2002
    Publication date: October 17, 2002
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Dong-Ha Shim
  • Patent number: 6462392
    Abstract: A micromechanical cap structure and a corresponding manufacturing method are described, the cap structure having a substrate, in particular in the form of a wafer, having a cavity made therein. The cavity includes a bottom surface and two pairs of opposite parallel side wall sections. The cavity has at least one stabilizing wall section, which connects two side wall sections. This considerably increases the stability of the cap structure.
    Type: Grant
    Filed: February 5, 2001
    Date of Patent: October 8, 2002
    Assignee: Robert Bosch GmbH
    Inventors: Stefan Pinter, Harald Emmerich, Hans-Peter Trah, Helmut Baumann
  • Patent number: 6448580
    Abstract: The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.
    Type: Grant
    Filed: September 15, 2000
    Date of Patent: September 10, 2002
    Assignees: TDK Corporation, Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Michio Arai, Yukio Yamauchi
  • Patent number: 6448624
    Abstract: A semiconductor sensor chip is provided with a weight portion supported in a frame via beams whereby acceleration up to substantially ±1 G can be detected by utilizing piezoresistance effect of resistor elements formed on the beams. The semiconductor sensor chip is supported by a seat having a thermal expansion coefficient equivalent to that of the semiconductor sensor chip via the frame. The frame and the seat are adhered to each other by a flexible adhesive agent mixed with a plurality of resin beads functioning as spacers and under an adhesion state, air damping of the weight portion is carried out by setting a dimension of an air gap between the weight portion and the seat to a range of 7 through 15 &mgr;m.
    Type: Grant
    Filed: August 8, 1997
    Date of Patent: September 10, 2002
    Assignee: Denso Corporation
    Inventors: Seiichiro Ishio, Kenichi Ao, Minoru Murata, Yasuki Shimoyama, Tomohito Kunda, Norio Kitao
  • Patent number: 6448623
    Abstract: A lower electrode 4 of a substrate 1 is continuously formed from a thin diaphragm portion 3 to a thick region 2, and independently of the lower electrode 4, an auxiliary electrode 8 is formed on the thick region 2 of the substrate 1, whereby a piezoelectric/electrostrictive film 5 is formed across the lower electrode 4 and the auxiliary electrode 8. An incomplete bonding portion of the piezoelectric/electrostrictive film 5 to the substrate 1 is eliminated on the thin diaphragm portion 3, thereby making it possible to reduce significantly a variation in vibration form.
    Type: Grant
    Filed: May 7, 2001
    Date of Patent: September 10, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Nobuo Takahashi, Mutsumi Kitagawa, Hirofumi Yamaguchi
  • Patent number: 6441451
    Abstract: A pressure transducer designed to transform static pressure or dynamic pressure applied to a diaphragm into a corresponding electrical signal and a method of manufacturing the same are provided. The transducer includes a fixed electrode formed in an upper surface of a substrate and a moving electrode provided in the diaphragm disposed above the fixed electrode through a cavity. The substrate has formed in the bottom thereof at least one hole which is used in a manufacturing process for removing a sacrificial layer formed between the diaphragm and the upper surface of the substrate in dry etching to form the cavity.
    Type: Grant
    Filed: June 29, 1999
    Date of Patent: August 27, 2002
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masaharu Ikeda, Masayoshi Esashi
  • Publication number: 20020108442
    Abstract: The invention relates to a micromechanical structures that include movable elements. In particular the invention relates to an arrangement for coupling such movable elements to other structures of a microelectromechanical system (MEMS). The invention is characterized in that the arrangement comprises at least one coupling means (930-936) for coupling the movable element to the fixed structure, and at least one flexible means (980, 990-996) for allowing different thermal expansion between the movable element and the other structure in the direction which is substantially perpendicular to the characteristic movement of the movable element, wherein said coupling means and/or flexible means is reinforced in the direction of the characteristic movement of the movable element.
    Type: Application
    Filed: September 28, 2001
    Publication date: August 15, 2002
    Inventors: Heikki Nieminen, Tapani Ryhanen, Vladimir Ermolov, Samuli Silanto
  • Patent number: 6426538
    Abstract: A suspended micromachined structure including a proof mass and multiple support arms configured to suspend the mass above a substrate. At least one support arm may include two spring elements, each attached to the substrate as well as to a rigid lateral element. Thus, there may be three points of attachment along each lateral element. These points of attachment create three effective flexure points along each rigid lateral element that allow the proof mass to move with a great deal of freedom axially, parallel to the substrate. The linearity of the spring constant that acts on the proof mass may be improved.
    Type: Grant
    Filed: January 16, 2001
    Date of Patent: July 30, 2002
    Assignee: Honeywell International Inc.
    Inventor: Gary R. Knowles
  • Publication number: 20020084499
    Abstract: A micro-mechanical actuator is disclosed for actuating an object in a micro-electro-mechanical system. One end of the object is flexibly connected a substrate, and another end is flexibly connected to an auxiliary lever which is further connected to an actuating force generator. The auxiliary lever receives an actuating force generated from the actuating force generator to perform a levering operation about a fulcrum. The position of the fulcrum allows an portion of the auxiliary lever connected to the object has a shift larger than a shift of another portion of the auxiliary lever connected to the actuating force generator in response to the actuating force.
    Type: Application
    Filed: April 27, 2001
    Publication date: July 4, 2002
    Inventors: Hung-Yi Lin, Weileun Fang
  • Patent number: 6388299
    Abstract: A sensor device that provides a relatively uniform electric field between a diaphragm and a substrate, regardless of the displacement of the diaphragm is disclosed. The sensor device provides a uniform spacing between the diaphragm and the substrate over a selected range of diaphragm displacements. A double layer diaphragm is disclosed that includes an upper support member and a lower electrode plate. The lower electrode plate is attached to the upper support member by a post member, and the post member is only attached to the center region of the support member. In another embodiment, an electro-mechanically controlled switch sensor is provided that uses an electrostatic force between the diaphragm and the substrate to produce a bi-stable snapping action.
    Type: Grant
    Filed: December 10, 1998
    Date of Patent: May 14, 2002
    Assignee: Honeywell Inc.
    Inventors: Joon-Won Kang, Kelly J. Simonette
  • Publication number: 20020048906
    Abstract: A semiconductor device having a thinned semiconductor element allowed to be easily handled, and a method of manufacturing the device are provided. The semiconductor device includes a semiconductor element and a bumper member bonded, as a reinforcing member, to a back surface opposite to an electrode-formed surface of the semiconductor element with an adhesive. The adhesive has a low elastic modulus and easily expands and contracts after bonding, and bonds the semiconductor element to the bumper member while allowing the semiconductor element to be deformed. Thus, the semiconductor device can easily be handled, and the semiconductor element can be deformed in responsive to the deformation of a substrate after being mounted. In addition, a thermal stress in a heat cycle can be alleviated effectively.
    Type: Application
    Filed: October 16, 2001
    Publication date: April 25, 2002
    Inventors: Tadahiko Sakai, Mitsuru Ozono, Tadashi Maeda
  • Patent number: 6369435
    Abstract: A semiconductor component (1) has a pressure sensor and a semiconductor chip (2) with a semiconductor structure (3) for at least one additional function of the semiconductor component (1). The semiconductor chip (2) is connected to a casing (5) by means of an elastic carrier arrangement (4) and can be deflected relative to the casing (5) against the restoring force of the material of the carrier arrangement (4) on the whole. For indirect measurement of a pressure acting on the semiconductor chip (2) and causing the deflection of the semiconductor chip (2), at least one position sensor that works together with the semiconductor chip (2) is provided.
    Type: Grant
    Filed: November 16, 1999
    Date of Patent: April 9, 2002
    Assignee: Micronas GmbH
    Inventor: Günter Igel
  • Patent number: 6355578
    Abstract: To offer a technique that can form electrodes in a composite device without using a lift-off method. In the manufacture of a composite device 2 in which a wafer 50 that has a sacrificial layer 51 is used, a mask film 66 that has been patterned is formed; patterning is given to a structural layer 54, the sacrificial layer 51 is etched from the area that is exposed, a movable part 11 is formed in an area where said sacrificial layer 51 is removed, and a fixed part 10 is formed in an area where the sacrificial layer 51 remains; also, a thin metallic film 60 is formed and patterning is given before forming the mask film 66, with electrodes 37 for an external electrical connection being formed. A protective film thin titanium tungsten film 64 is formed on the surface of said thin metallic film 60, with the thin metallic film 60 being protected during etching of the sacrificial layer 51.
    Type: Grant
    Filed: October 27, 1998
    Date of Patent: March 12, 2002
    Assignee: Texas Instruments Incorporated
    Inventor: Yohichi Okumura
  • Publication number: 20020011637
    Abstract: A sensor formed from a semiconductor material. The device comprises a support frame, a sensing element; and means for vibrating the sensing element at a frequency corresponding generally to a first resonant frequency vibration mode. Error detection means detects the resonant frequency vibration mode, the output of the error detection means being indicative of existence or otherwise an expected response of the resonant frequency vibration mode to the excitation. Means for detecting the deformation of the sensing element provides an output indicative of the parameter to be sensed, the deformation detecting means and error detection means being formed from the same elements.
    Type: Application
    Filed: May 14, 2001
    Publication date: January 31, 2002
    Inventors: Terje Kvisteroey, Jacobsen Henrik
  • Patent number: 6323542
    Abstract: The present invention is a semiconductor device capable of relieving thermal stress without breaking wire. It comprises a semiconductor chip (12), a solder ball (20) for external connection, wiring (18) for electrically connecting the semiconductor chip (12) and the solder ball (20), a stress relieving layer (16) provided on the semiconductor chip (12), and a stress transmission portion (22) for transmitting stress from the solder ball (20) to the stress relieving layer (16) in a peripheral position of an electrical connection portion (24a) of the solder ball (20) and wiring (18).
    Type: Grant
    Filed: March 26, 1999
    Date of Patent: November 27, 2001
    Assignee: Seiko Epson Corporation
    Inventor: Nobuaki Hashimoto
  • Patent number: 6323529
    Abstract: A semiconductor acceleration sensor in which the acceleration sensor chip is protected from the resin molding of the package to assure good detection precision. A semiconductor acceleration sensor in which functional elements including an acceleration sensor chip and signal-processing chip are sealed in a resin package, has a damping member disposed along an outside surface of the acceleration sensor chip to alleviate stress from the resin package on the acceleration sensor chip, and a plate-like covering member which cover a top edge part of the damping member and a top edge of the acceleration sensor chip. Resin is thus prevented from penetrating the gap between the sensor chip and damping member during the packaging process. The sensor chip is thus protected from stresses from the resin molding, and the semiconductor acceleration sensor can assure good detection precision.
    Type: Grant
    Filed: June 18, 1999
    Date of Patent: November 27, 2001
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Teruaki Nagahara
  • Patent number: 6320201
    Abstract: A semiconductor test chip including a plurality of test functions. The test functions of the semiconductor test chip include bond pad pitch and size effects on chip design, wire bond placement accuracy regarding placement of the wire bond on the bond pad, evaluation of bond pad damage (cratering) effect on the area of the chip below the bond pad during bonding of the wire on the bond pad, street width effects regarding the use of thinner saw cuts in cutting the individual chips from the wafer, thermal impedance effects for thermal testing capabilities, ion mobility evaluation capabilities and chip on board in flip chip application test capabilities.
    Type: Grant
    Filed: July 20, 2000
    Date of Patent: November 20, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Tim J. Corbett, Raymond P. Scholer, Fernando Gonzalez
  • Patent number: 6313514
    Abstract: The pressure sensor component has a chip carrier carrying a semiconductor chip with an integrated pressure sensor having a pressure-detecting surface exposed to the pressure to be measured. A device encapsulation made from an electrically insulating material surrounds the entire assembly except for protruding electrode terminals. Bond wires connect the electrode terminals with the pressure sensor and/or the electronic circuit of the semiconductor chip. The device encapsulation consists entirely of a homogeneous pressure-transmitting medium comprising an enveloping compound, which transmits the pressure to be measured as free from delay and attenuation as possible but is mechanically resistant and dimensionally stable. The pressure to be measured is transmitted directly by the enveloping compound onto the pressure-detecting surface of the semiconductor chip, and the pressure sensor and/or the pressure sensor component is covered tightly on all sides against mechanical and/or chemical influences.
    Type: Grant
    Filed: June 8, 1998
    Date of Patent: November 6, 2001
    Assignee: Infineon Technologies AG
    Inventors: Jürgen Winterer, Eric Bootz, Bernd Stadler, Achim Neu, Thies Janczek
  • Patent number: 6300665
    Abstract: Optical cross-connect systems involve the general concept of a two dimensional array of MEMS tilt mirrors being used to direct light coming from a first optical fiber to a second optical fiber.
    Type: Grant
    Filed: September 28, 2000
    Date of Patent: October 9, 2001
    Assignee: Xerox Corporation
    Inventors: Eric Peeters, Michel A. Rosa
  • Publication number: 20010026004
    Abstract: The stress at the edges of a thin film conductor can be reduced by noncoincident layered structures, which takes advantage of the characteristic stress polarity changing from tensile to compressive or vice versa in the edge vicinity in order to avoid device reliability and performance problems. By using noncoincident layered structures, destructive stress interference from different layers can be achieved to reduce the stress or stress gradient at the edge. The structures and methods disclosed herein can advantageously be used in many integrated circuit and device manufacturing applications (including gates, wordlines, and bitlines).
    Type: Application
    Filed: June 10, 1998
    Publication date: October 4, 2001
    Inventors: SIANG PING KWOK, WILLIAM F. RICHARDSON, DIRK N. ANDERSON
  • Publication number: 20010020726
    Abstract: In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
    Type: Application
    Filed: March 21, 2001
    Publication date: September 13, 2001
    Inventors: Kurt Peterson, Nadim Maluf, Wendell McCulley, John Logan, Erno Klaasen, Jan Noworolski
  • Patent number: 6284670
    Abstract: After an Si wafer is anisotropically etched through an etching mask having an opening in an anisotropically etching solution, an etching face of the Si wafer emerged by the anisotropic etching is subjected to anodic oxidation by applying a positive voltage for anodic oxidation on the Si wafer. As a result, the etching face of the Si wafer is isotropically etched due to the anodic oxidation in the anisotropic etching solution. By the isotropic etching thus performed, a sharp corner formed at an end portion of a recess portion formed in the Si wafer by the anisotropic etching, is rounded. Because the isotropic etching reaction progresses very slowly in comparison with the anisotropic etching, control of the etching can be made easy and accurately. As a result, the thickness of the diaphragm can be prevented from being dispersed.
    Type: Grant
    Filed: July 23, 1998
    Date of Patent: September 4, 2001
    Assignee: Denso Corporation
    Inventors: Yoshitsugu Abe, Hiroshi Tanaka, Atsushi Sakaida, Toshihisa Taniguchi, Tsuyoshi Fukada
  • Patent number: 6278167
    Abstract: The invention relates to a semiconductor sensor having a base element (4) and at least one deformation element (8). The deformation element (8) is composed of a semiconductor substrate that is doped with a dopant of a first conductivity type. Piezoresistors (14) that are doped with a dopant of the opposite conductivity type are located in the deformation element (8). The deformation element (8) has at least one part that is in contact with a medium. The semiconductor sensor is characterized in that the part has a lower concentration of the dopant than a further region located between it and the piezoresistor (14).
    Type: Grant
    Filed: March 20, 2000
    Date of Patent: August 21, 2001
    Assignee: Infineon Technologies AG
    Inventors: Thomas Bever, Stephan Schmitt, Günter Ehrler
  • Patent number: 6215137
    Abstract: A probe is provided with a thermocouple made of a joint between a first metal material and a second metal material. The first metal material is formed on the surface of a flexible plate facing a substrate, continuously from the thermocouple portion. The surface of the flexible plate facing the substrate is formed with a first wiring conductive film, which is electrically connected to the first metal material and extends over the proximal end side area of the flexible plate.
    Type: Grant
    Filed: August 12, 1998
    Date of Patent: April 10, 2001
    Assignee: Nikon Corporation
    Inventors: Yoshihiko Suzuki, Shinya Hara
  • Patent number: 6211558
    Abstract: A surface micro-machined sensor uses a pedestal in a cavity to support a flexible structure and reduce the span of the flexible structure. The reduced span per sense area allows larger sensor areas without permitting forces to permanently deform the flexible structure or cause the structure to touch an opposite wall of the cavity. The flexible structure bonded to the pedestal and an elevated region surrounding the pedestal defines a cavity between the flexible membrane and a lower plane region. Active regions can be formed in the lower plane region for capacitors or transistors. A pedestal can be of various shapes including a circular, ovoid, rectangular or polygonal shape. The lower plane region can be of various shapes including a ring or donut shape, ovoid, rectangular or polygonal shape with an inner dimension corresponding to the outer dimension of the pedestal. The elevated region can be of various shapes with an inner dimension corresponding to the outer dimension of the lower plane region.
    Type: Grant
    Filed: July 18, 1997
    Date of Patent: April 3, 2001
    Assignee: Kavlico Corporation
    Inventors: M. Salleh Ismail, Raffi M. Garabedian
  • Patent number: 6211540
    Abstract: A semiconductor strain sensor comprises a semiconductor cantilever probe having a free end and a surface portion for undergoing deformation due to a displacement of the free end. A Schottky junction is disposed on the surface portion of the semiconductor cantilever probe and is positioned to undergo a change in electrical characteristic in response to the deformation of the surface portion. The amount of displacement of the free end of the cantilever probe is detected on the basis of a change in the electrical characteristic of the Schottky junction.
    Type: Grant
    Filed: October 15, 1998
    Date of Patent: April 3, 2001
    Assignee: Seiko Instruments Inc.
    Inventors: Hiroshi Takahashi, Nobuhiro Shimizu, Yoshiharu Shirakawabe, Susumu Ichihara, Michel Despont
  • Patent number: 6198145
    Abstract: The integrated microactuator has a stator and a rotor having a circular extension with radial arms which support electrodes extending in a substantially circumferential direction and interleaved with one another. For the manufacture, first a sacrificial region is formed on a silicon substrate; an epitaxial layer is then grown; the circuitry electronic components and the biasing conductive regions are formed; subsequently a portion of substrate beneath the sacrificial region is removed, forming an aperture extending through the entire substrate; the epitaxial layer is excavated to define and separate from one another the rotor and the stator, and finally the sacrificial region is removed to release the mobile structures from the remainder of the chip.
    Type: Grant
    Filed: October 28, 1998
    Date of Patent: March 6, 2001
    Assignee: STMicroelectronics, S.r.l.
    Inventors: Paolo Ferrari, Benedetto Vigna
  • Patent number: 6171880
    Abstract: A method is provided for the manufacture of a convective accelerometer and tilt sensor device using CMOS techniques. An integrated circuit chip is produced which includes a silicon substrate having an integrated circuit pattern thereon including a heater element located centrally of the substrate and at least first and second thermocouple elements located on the substrate on opposite sides of the heater element. Thereafter, portions of the substrate surrounding and beneath the heater and thermocouple elements are etched away to suspend the element on the substrate and thus to thermally isolate the elements from the substrate. The substrate is etched up to the cold thermocouple junction of the thermocouple elements so the cold junction remains on the substrate.
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: January 9, 2001
    Assignee: The United States of America as represented by the Secretary of Commerce
    Inventors: Michael Gaitan, Nim Tea, Edwin D. Bowen, Veljko Milanovic
  • Patent number: 6160272
    Abstract: A semiconductor device is formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate. The semiconductor device is used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed. A source electrode has a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance. The source electrode is electrically coupled to the source region. A drain electrode has a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance. The drain electrode is electrically coupled to the drain region. An insulation layer is formed on the active layer. A gate electrode is formed on the insulation layer.
    Type: Grant
    Filed: December 9, 1997
    Date of Patent: December 12, 2000
    Assignees: TDK Corporation, Semiconductor Energy Laboratory Co. Ltd
    Inventors: Michio Arai, Yukio Yamauchi
  • Patent number: 6140689
    Abstract: In a relative pressure sensor or miniaturized microphone as a micromechanical sensor component, a polysilicon membrane is arranged over a polysilicon membrane of an SOI substrate. A recess that is connected to the cavity between the membrane and the body silicon layer by openings in the body silicon layer is present in the substrate on the back side. Given an excursion of the membrane, a pressure equalization can therefore occur in the cavity as a result of these openings. The measurement occurs capacitatively by electrical connection of the electrically conductively doped membrane and a doped region formed in the body silicon layer.
    Type: Grant
    Filed: December 21, 1998
    Date of Patent: October 31, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Thomas Scheiter, Ulrich Naher, Christofer Hierold
  • Patent number: 6127713
    Abstract: A semiconductor pressure detecting device comprises a package having a pressure introducing hole; a base plate which has a first through hole and is mounted in the package; a base mounted on the base plate; and a semiconductor pressure sensor chip which is mounted on the base; wherein the base plate has a thickened portion formed around the first through hole and is fixed by welding the circumference of the thickened portion onto the package.
    Type: Grant
    Filed: October 29, 1998
    Date of Patent: October 3, 2000
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Fujikoki Corporation
    Inventors: Takanobu Takeuchi, Motomi Ichihashi, Keiji Sasaki
  • Patent number: 6072190
    Abstract: A micro contact structure and a probe card to be used in testing performance of a semiconductor integrated circuit device formed on a semiconductor wafer have improved contact characteristics. The contact structure includes a micro contact pin having electric conductivity formed on one end of a beam which is movable in a vertical direction, and a piezoelectric element formed on the beam to drive the beam in the vertical direction. The beam is made of silicon on the surface of which is formed of a conductive thin film, and the micro contact pin has a pyramid shape. The piezoelectric element is a bimorph plate mounted on an upper surface of the beam or both upper and lower surfaces of the beam.
    Type: Grant
    Filed: November 18, 1996
    Date of Patent: June 6, 2000
    Assignee: Advantest Corp.
    Inventors: Takashi Watanabe, Minako Yoshida
  • Patent number: 6051866
    Abstract: A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
    Type: Grant
    Filed: August 11, 1998
    Date of Patent: April 18, 2000
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Kevin A. Shaw, Z. Lisa Zhang, Noel C. MacDonald
  • Patent number: 6043524
    Abstract: A sensor (100) includes a fixed gate field-effect transistor (138) that produces a quiescent signal (V.sub.QUIESC1) in a channel (336) when a control signal (V.sub.CONTROL) is applied to a source (332) of the FGFET. A movable gate field-effect transistor (MGFET) (108) produces a sense signal (V.sub.ACCEL) in a channel (316) in response to a physical condition of the sensor when the control signal is applied to a source (312) of the MGFET such that the sense signal is proportional to the quiescent signal. The difference between the currents in the FGFET and MGFET is amplified by a differential amplifier (230) to produce the output signal (V.sub.OUT) of the sensor. The difference between a reference signal (V.sub.RATIO) and the quiescent signal is amplified in an amplifier (206) to produce the control signal that adjusts the output signal to be proportional to the reference signal.
    Type: Grant
    Filed: February 3, 1997
    Date of Patent: March 28, 2000
    Assignee: Motorola, Inc.
    Inventors: Eric D. Joseph, Barun K. Kar