Abstract: An image sensor including: a semiconductor substrate having a first region and a second region; an isolation region filling an isolation trench that partially penetrates the semiconductor substrate; a plurality of photoelectric conversion regions defined by the isolation region and forming a first hexagonal array on a plane that is parallel to a surface of the semiconductor substrate; and a plurality of microlenses respectively corresponding to the plurality of photoelectric conversion regions, and forming a second hexagonal array on the plane that is parallel to the surface of the semiconductor substrate.

Abstract: A semiconductor structure includes an ILD disposed over a semiconductive substrate, an isolation disposed between the semiconductive substrate and the ILD, and a conductive pad disposed within the semiconductive substrate, the isolation and the ILD. A top surface of the conductive pad is substantially parallel with two surfaces of the semiconductive substrate. The top surface of the conductive pad is between the two surfaces of the semiconductive substrate. Sidewalls of the conductive pad are in direct contact with the ILD and the isolation.

Abstract: A detector includes a semiconductor layer included in a detection region and a peripheral region, and having a first surface and a second surface opposite to the first surface, and a wiring structure included in at least the detection region, and disposed between a space on the first surface side with respect to the semiconductor layer and a space on the second surface side with respect to the semiconductor layer, wherein a thickness of the semiconductor layer in at least a part of the detection region is smaller than a thickness of the peripheral region including the semiconductor layer, and the thickness of the semiconductor layer is larger than a distance between the first surface in the detection region and the space on the first surface side, and a distance between the second surface in the detection region and the space on the second surface side.

Abstract: A display apparatus including a display substrate, a light-emitting device on the display substrate, an encapsulation substrate on the light-emitting device and bonded to the display substrate, and a diffraction-grating layer on a top surface of the encapsulation substrate, wherein the diffraction-grating layer includes a plurality of diffraction patterns spaced apart from one another by a predetermined distance, and each of the plurality of diffraction patterns has a stacked structure of a lower layer and an upper layer, wherein the lower and upper layers include different materials.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. Each of the first micro structures has a first height, and each of the second micro structures has a second height. The second height is less than the first height.

Abstract: A semiconductor device includes a first insulating layer, an optical waveguide formed on the first insulating layer, a fixed charge layer formed on the first insulating layer such that the fixed charge layer covers the optical waveguide, and a second insulating layer formed on the fixed charge layer.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd<Hb”.

Abstract: A solid-state imaging device includes blue photoelectric conversion elements, green photoelectric conversion elements, red photoelectric conversion elements, infrared photoelectric conversion elements, and an infrared cut filter (IRCF) is layered on the blue photoelectric conversion elements, the green photoelectric conversion elements, and the red photoelectric conversion elements with a uniform film thickness. Color filters that respectively transmit the blue light, the green light, and the red light are layered on the IRCF so as to correspond with the blue photoelectric conversion elements, the green photoelectric conversion elements, and the red photoelectric conversion elements. A visible-light shielding filter is layered on the infrared photoelectric conversion elements.

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

Abstract: A semiconductor structure includes a sensor wafer comprising a plurality of sensor chips on and within a substrate. Each of the plurality of sensor chips includes a pixel array region, a bonding pad region, and a periphery region. The periphery region is between adjacent to a scribe line, and the scribe line is between adjacent sensor chips of the plurality of sensor chips. Each of the plurality of sensor chips further includes a stress-releasing trench structure embedded in the substrate, wherein the stress-releasing trench structure is in the periphery region, and the stress-releasing trench structure fully surrounds a perimeter of the pixel array region and the bonding pad region of a corresponding sensor chip of the plurality of sensor chips.

Abstract: A solid-state imaging device includes: a plurality of pixels each including a first electrode, an organic photoelectric conversion film, and a second electrode in this order on a substrate, the organic photoelectric conversion film including a first inclined surface on a side wall; and a first sealing film formed, on the plurality of pixels, to cover the side wall of the organic photoelectric conversion film and the second electrode.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A lens module with physically stronger foundations and enhanced stability includes a circuit board, an image sensor thereon, a mounting bracket, an optical filter, and a lens unit. The mounting bracket on the circuit board has the image sensor. The optical filter on the mounting bracket is above the image sensor. The lens unit is connected to the mounting bracket facing away from the circuit board by a frame of adhesive. The surface of the mounting bracket facing away from the circuit board has positioning posts at corners of the surface of the mounting bracket. A surface of the lens unit connected to the mounting bracket has receiving grooves positioned at corners of the surface of the lens unit. The positioning posts are inserted into the receiving grooves.

Abstract: An image sensor includes a semiconductor substrate including a pixel region and a pad region, a plurality of photoelectric conversion regions in the pixel region, an interconnect structure on a front surface of the semiconductor substrate, a pad structure in the pad region and on a rear surface of the semiconductor substrate, a through via structure in the pad region and electrically connected to the interconnect structure through the semiconductor substrate, and an isolation structure at least partially extending through the pad region of the semiconductor substrate from the rear surface of the semiconductor substrate. The isolation structure surrounds the pad structure and the through via structure in a plane extending parallel to the rear surface of the semiconductor substrate.

Abstract: Disclosed is an image sensor including a first device isolation layer in a semiconductor layer and defining a plurality of pixel regions, a first photoelectric conversion device and a second photoelectric conversion device that are in each of the pixel regions, and a second device isolation layer in the semiconductor layer vertically overlapping the first photoelectric conversion device and the second photoelectric conversion device.

Abstract: A backside illuminated image sensor includes pixel regions disposed in a substrate, a light-blocking pattern disposed on a backside surface of the substrate and having openings corresponding to the pixel regions, a color filter layer disposed on the light-blocking pattern, a micro lens array disposed on the color filter layer, and refraction patterns respectively disposed in the openings to condense light passing through the micro lens array and the color filter layer into the pixel regions.

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer and a trench isolation. The semiconductor substrate has a front side surface and a back side surface opposite to the front side surface. The radiation sensing member is disposed in a photosensitive region of the semiconductor substrate and extends from the front side surface of the semiconductor substrate. The radiation sensing member includes a semiconductor material with an optical band gap energy smaller than 1.77 eV. The device layer is over the front side surface of the semiconductor substrate and the radiation sensing member. The trench isolation is disposed in an isolation region of the semiconductor substrate and extends from the back side surface of the semiconductor substrate.

Abstract: An image sensor including a substrate and an image sensing element is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit a contour of the arc surface. The image sensing element has a front surface and a rear surface opposite to each other and has at least one first conductive via. The rear surface of the image sensing element directly contacts the arc surface, and the first conductive via is extended from the front surface to the rear surface. In addition, a manufacturing method of the image sensor is also provided.

Abstract: To reduce the influence of generation of after-pulses when a pixel including a SPAD is used. In a SPAD pixel, a PN junction part of a P+ type semiconductor layer and an N+ type semiconductor layer is formed, a P type semiconductor layer having a concentration higher than the concentration of a silicon substrate is formed in a region deeper than the PN junction part and close to a light absorption layer. With no quenching operation generating no after-pulse, electrons generated in the light absorption layer are guided to the PN junction part and subjected to avalanche amplification. When the quenching operation is performed after avalanche amplification, the electrons are guided to the N+ type semiconductor layer by a potential barrier to prevent avalanche amplification. The present disclosure is applicable to an image sensor including a SPAD.

Abstract: An image sensor may include: photoelectric conversion elements formed in a substrate, and isolation regions disposed between the photoelectric conversion elements; an anti-reflective layer formed over the substrate; grid patterns formed over the anti-reflective layer; color filters between the grid patterns; and microlenses formed over the color filters. Each of the grid patterns may include an upper grid portion and a lower grid portion, and the bottom of the lower grid portion is embedded in the anti-reflective layer.

Abstract: The fan-out sensor package includes: a core member having a through-hole; an integrated circuit (IC) for a sensor disposed in the through-hole and having a first surface having a sensor region and first connection pads disposed thereon, a second surface opposing the first surface and having second connection pads disposed thereon, and through-silicon vias (TSVs) penetrating between the first and second surfaces and electrically connecting the first and second connection pads to each other; an encapsulant covering the core member and the second surface of the IC for a sensor and filling at least portions of the through-hole; a redistribution layer disposed on the encapsulant; and vias penetrating through at least portions of the encapsulant and electrically connecting the redistribution layer and the second connection pads to each other.

Abstract: An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate including photoelectric elements, a first color filter disposed on the substrate, a second color filter disposed on the substrate to be adjacent to the first color filter, a covering film disposed between sidewalls of the first and second color filters, and an air gap formed in the covering film.

Abstract: An electronic device includes a carrier substrate having a front face and an electronic chip mounted on the front face. An encapsulation cover is mounted above the front face and bounds a chamber in which the chip is situated. A front opening is provided in front of an optical component of the chip. An optical element, designed to allow light to pass, is mounted on the cover in a position which covers the front opening of the cover. The optical element includes a central region designed to deviate light and a positioning pattern that is visible through the front opening. An additional mask is mounted on the encapsulation cover in a position which extends in front of the optical element. A local opening of the additional mask is situated in front of the optical component.

Abstract: An imaging device includes a light shield that has light shielding walls and a plurality of light transmissive parts in a plurality of apertures between the light shielding walls and a light-receiving element layer in which a large number of light-receiving elements that perform photoelectric conversion corresponding to incident light inputted through the light transmissive parts of the light shield are arranged to acquire image information that has passed through optical elements that are different between the adjacent light transmissive parts. Further, the image information that passed through optical elements being different for every one of the light transmissive parts adjacent is acquired, and therefore, the sensor areas of the light receiving element is utilized effectively.

Abstract: An image sensor package includes a substrate, an image sensor chip disposed on the substrate, and an external force absorbing layer disposed between the substrate and the image sensor chip and having a first surface and a second surface opposite to the first surface. The image sensor package further includes an adhesive layer configured to bond the second surface of the external force absorbing layer to the substrate. The adhesive layer has a first modulus, and the external force absorbing layer has a second modulus different from the first modulus.

Abstract: An electronic device includes a substrate semiconductor wafer with semiconductor portions separated from one another by through-passages. Electronic circuits and a dielectric layer with a network of electrical connections are formed at a front face of the substrate semiconductor wafer. Electrically conductive fillings are contained within the through-passages and are connected to the network of electrical connections. Interior dielectric layers for anti-diffusion protection are provided in the through-passages between the electrically conductive fillings and the semiconductor portions. Back side dielectric layers are joined to the interior dielectric layers.

Abstract: A method of manufacturing a semiconductor device includes forming a via including a first conductive material on an inner wall of a trench on a substrate. The method further includes forming a first insulating interlayer on the substrate. The first insulating interlayer covers the via and partially fills the trench, and the first insulating interlayer has a non-flat upper surface. The method further includes forming a polishing stop layer on the first insulating interlayer, forming a second insulating interlayer on the polishing stop layer, in which the second insulating interlayer fills a remaining portion of the trench, planarizing the second insulating interlayer until the polishing stop layer is exposed, and etching the polishing stop layer and the first and second insulating interlayers using a dry etching process until remaining portions of the polishing stop layer except for a portion of the polishing stop layer in the trench are removed.

Abstract: The present disclosure generally relates to semiconductor detectors for use in optoelectronic/photonic devices and integrated circuit (IC) chips, and methods for forming same. The present disclosure also relates to photodetectors integrated with waveguide stacks, more particularly, photodetectors with butt-end coupled waveguides. The present disclosure also relates to methods of forming such structures.

Abstract: A display panel, terminal, and method are provided for display control in the technical field of display. The display panel may include: an image display panel; an optical sensor array in the image display panel. The optical sensor array may include a plurality of optical sensors arranged in an array. The display further includes a grating panel disposed above the optical sensor array. The grating panel includes an optical shading area that is not overlapped with an optical sensing area of the optical sensors.

Abstract: The present invention relates to an optical article and an optical filter including the same. The optical filter: includes an optical article which has at least two absorption peaks, including a first and a second absorption peak, in the wavelength range of 380 nm to 1,200 nm by containing two or more kinds of near-infrared absorbing pigments, and thus shows a high average transmittance of 86% or greater for light having a wavelength in the visible wavelength range; can limit the maximum transmittance of light having a wavelength in the range of 800 nm to 1,100 nm below 0.5%, so as to prevent lens flare; and can reduce assembly defects due to flexure of an optical filter in the process of assembling the optical filter to an image capturing apparatus, thereby improving yield and productivity.

Abstract: Implementations of semiconductor packages may include: a semiconductor device included within a cavity within a glass block. The package may also include a substrate coupled with a first side of the semiconductor device and two or more edges of the glass block. A fill material may be included between the substrate and the second conductor device and an opaque material may be between a side surface of the semiconductor device and an inner surface of the cavity. The opaque material may be configured to block light from contacting the side surface of the semiconductor device.

Abstract: An infrared photo-detector and a method for manufacturing it are disclosed. The infrared photo-detector contains a collector region, a first absorber layer absorbing a first wavelength band of incident light, wherein the first absorber layer is disposed between the collector region and the incident light, a second absorber layer absorbing a second wavelength band of light, wherein the first absorber layer is disposed between the second absorber layer and the incident light, at least one first electrical contact coupled with the first absorber layer, at least one second electrical contact coupled with the second absorber layer and at least one third electrical contact coupled with the collector, wherein the at least one third electrical contact provides a current associated with absorbed light of the first wavelength band and absorbed light of the second wavelength band. The method disclosed teaches how to manufacture the infrared photo-detector.

Abstract: Provided is a highly-sensitive color image-capture element and an image capture device that can be simply manufactured, have little polarization dependency, and have micro-spectroscopic elements capable of separating incident light into three wavelength ranges integrated facing a two-dimensional pixel array. An image capture element 100 has a transparent layer 111 having a low refractive index made of SiO2 or the like and a plurality of micro-lenses 103 laminated on a two-dimensional pixel array in which pixels 102 each including a photoelectric conversion element are disposed in an array. Inside the transparent layer 111 having the low refractive index, micro-spectroscopic elements 101 composed of a plurality of microstructures having constant thickness (length in a direction perpendicular to the two-dimensional pixel array) formed of a material such as SiN having a higher refractive index than that of the transparent layer 111 is embedded.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: Optical stack assemblies and fabrication techniques thereof. The optical stack assembly includes first and second sub-assemblies, each of which include a substrate and a sub-structure fixed to the respective substrate. Each sub-structures includes a respective first edge feature and a respective second edge feature that project away from the substrate of that sub-structure, each second edge feature being disposed laterally closer to an outer periphery of the respective sub-structure than the first edge feature of the same sub-structure. The first edge feature of the first sub-structure is in direct contact with the first edge feature of the second sub¬structure, while the second edge feature of the first sub-structure and the second edge feature of the second sub-structure are attached to one another by adhesive. At least one of the first or second sub-structures includes an optical element on a same side of the sub-structure as the first and second edge features of that sub-structure.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: An image capturing assembly and its packaging method are provided. The method includes: providing a photosensitive chip having soldering pads and a mounted optical filter; bonding functional components on a provided first carrier substrate temporarily, where the functional components have soldering pads facing away from or facing toward the first carrier substrate; forming an encapsulation layer at least being filled between the functional components on the first carrier substrate, and forming a through hole in the encapsulation layer; placing the photosensitive chip in the through hole and bonding the photosensitive chip on the first carrier substrate temporarily, where the soldering pads of the photosensitive chip face away from the first carrier substrate; and after the photosensitive chip is temporarily bonded on the first carrier substrate, forming a redistribution layer structure to electrically connect the soldering pads of the photosensitive chip with the soldering pads of the functional components.

Abstract: There is provided an imaging element including a photoelectric conversion unit formed in a substrate and a wire grid polarizer disposed at a light-incident side of the photoelectric conversion unit. In addition, the wire grid polarizer includes a plurality of strip-shaped portions, where air gaps exist between adjacent strip-shaped portions. Further, a protective layer is formed on the wire grid polarizer.

Abstract: The present disclosure relates to a solid-state image pickup apparatus, a correction method, and an electronic apparatus, enabled to suppress an apparent uncomfortable feeling of an image output from a solid-state image pickup apparatus in which pixels of different OCL shapes are mounted mixedly. A solid-state image pickup apparatus according to an aspect of the present disclosure includes a pixel array in which a first pixel in which an OCL (On Chip Lens) of a standard size is formed and a second pixel in which an OCL of a size different from the standard size is formed are present mixedly, and a correction section that corrects a pixel value of the first pixel that is positioned in the vicinity of the second pixel among the first pixels on the pixel array. The present disclosure can be applied to, for example, a CMOS image sensor.

Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Abstract: A method for fabricating an optical element is provided. A substrate is provided. A plurality of metal grids are formed on the substrate. An organic layer is formed on the substrate and the metal grids. The organic layer is etched to form a first patterned organic layer including a plurality of first protrusion portions and a plurality of first trenches surrounded by the first protrusion portions. The first patterned organic layer is etched to form a second patterned organic layer including a plurality of second protrusion portions and a plurality of second trenches surrounded by the second protrusion portions. Each second protrusion portion covers one metal grid. There is a distance between the center axis of one second protrusion portion of the second patterned organic layer and the center axis of one metal grid covered by the one second protrusion portion of the second patterned organic layer.

Abstract: A solid-state imaging apparatus includes a plurality of high-sensitivity pixels that are arranged in a matrix, and perform a photoelectric conversion at a predetermined sensitivity; a plurality of low-sensitivity pixels that are arranged in a matrix in gaps between the plurality of high-sensitivity pixels, and perform a photoelectric conversion at a lower sensitivity than the predetermined sensitivity; and a signal processor that generates a pixel signal by (i) detecting a difference signal between a signal from the plurality of high-sensitivity pixels and a signal from the plurality of low-sensitivity pixels, and (ii) correcting the signal from the plurality of high-sensitivity pixels using the difference signal.

Abstract: A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display is provided. The method comprising providing a first wafer comprising first layers disposed over a first substrate, said first layers comprising non-silicon based semiconductor material for forming p-n junction LEDs (light emitting devices); providing a second partially processed wafer comprising silicon-based CMOS (Complementary Metal Oxide Semiconductor) devices formed in second layers disposed over a second substrate, said CMOS devices for controlling the LEDs; and bonding the first and second wafers to form a composite wafer via a double-bonding transfer process.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a charge release layer. A photodetector is disposed within a semiconductor substrate. An etch stop layer overlies the photodetector. A color filter overlies the etch stop layer. A dielectric grid structure surrounds the color filter. The charge release layer is sandwiched between the dielectric grid structure and the etch stop layer. The charge release layer surrounds the color filter and comprises a conductive material. The charge release layer directly contacts the color filter.

Abstract: A display device may include a base and a first wiring layer disposed on the base. The first wiring layer may include a first material and a second material layer that overlap each other. A material of the second material layer may be different from a material of the first material layer. The second material layer contains MoOx, wherein 1.9?x?2.1.

Abstract: An image includes a semiconductor substrate having a first surface and a second surface that face each other; a first photoelectric conversion region and a second photoelectric conversion region provided in the semiconductor substrate; a gapfill pattern that is interposed between the first and second photoelectric conversion regions and extends from the second surface toward the first surface, wherein a first side surface of the gapfill pattern faces the first photoelectric conversion region and a second side surface of the gapfill pattern faces the second photoelectric conversion region; and a conductive pattern disposed on the gapfill pattern. The conductive pattern includes a first portion disposed on the first side surface, a second portion disposed on the second side surface, and a connecting portion that is disposed on a top surface of the gapfill pattern and electrically connects the first portion to the second portion.

Abstract: Optoelectronic modules, such as proximity sensors, two-dimensional and three-dimensional cameras, structured- or encoded-light emitters, and projectors include optical assemblies and active optoelectronic components that are light sensitive or emit light. The optical assemblies are aligned to the active optoelectronic components via alignment spacers and adhesive. The alignment spacers include surfaces operable to limit the lateral migration of adhesive thereby preventing the contamination of the active optoelectronic components with adhesive. In some instances, small optoelectronic module footprints can be maintained without compromising the integrity of the adhesive.

Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.