Abstract: According to one embodiment, a magnetic memory device includes a semiconductor substrate, a memory cell array area on the semiconductor substrate, the memory cell array area including magnetoresistive elements, each of the magnetoresistive elements having a reference layer with an invariable magnetization, a storage layer with a variable magnetization, and a tunnel barrier layer therebetween, a magnetic field generating area which generates a first magnetic field cancelling a second magnetic field applying from the reference layer to the storage layer, and which is separated from the magnetoresistive elements, and a closed magnetic path area functioning as a closed magnetic path of the first magnetic field, and surrounding the memory cell array area and the magnetic field generating area.

Abstract: An exemplary embodiment described technology relates generally to an organic light emitting diode (OLED) display and a manufacturing method thereof. The organic light emitting diode (OLED) display according to an exemplary embodiment includes: a substrate; an encapsulation member; an organic light emitting element between the substrate and the encapsulation member; a middle sealing member including one side disposed between the substrate and the encapsulation member and another side extended from the one side to be bent and enclosing an edge of the encapsulation member; a first sealant sealing and combining the one side of the middle sealing member and the substrate to each other; a second sealant sealing and combining the other side of the middle sealing member and the encapsulation member to each other; and a getter at the one side of the middle sealing member and the encapsulation member.

Abstract: The light source module includes a circuit board adapted to be placed on a mounting base of a light source holding member, and a power feeding attachment to supply power to a semiconductor light emitting device, the circuit board including a board part on which the semiconductor light emitting device is mounted, and a conductive circuit formed on a surface of the board part and having a pair of terminal parts and a light source connection part to connect the pair of terminal parts and the semiconductor light emitting device, the power feeding attachment including an electrically-insulating portion and an conductive portion partially embedded in the electrically-insulating portion, the power feeding attachment being adapted to be attached to the light source holding member such that the electrically-insulating portion presses at least a portion of the circuit board against the mounting base.

Abstract: A fiber coupled semiconductor device and a method of manufacturing of such a device are disclosed. The method provides an improved stability of optical coupling during assembly of the device, whereby a higher optical power levels and higher overall efficiency of the fiber coupled device can be achieved. The improvement is achieved by attaching the optical fiber to a vertical mounting surface of a fiber mount. The platform holding the semiconductor chip and the optical fiber can be mounted onto a spacer mounted on a base. The spacer has an area smaller than the area of the platform, for mechanical decoupling of thermally induced deformation of the base from a deformation of the platform of the semiconductor device. Optionally, attaching the fiber mount to a submount of the semiconductor chip further improves thermal stability of the packaged device.

Abstract: An optical system has a first relief-type diffraction grating fiducial, or alignment mark, on a transparent surface of a first optical wafer or plate, the grating arranged to deflect light away from an optical path and appear black. The first wafer may have lenses. The first fiducial is aligned to another fiducial on a second wafer having further optical devices as part of system assembly; or the fiducials are aligned to alignment marks or fiducials on an underlying photosensor. Once the optical devices are aligned and the wafers bonded, they are diced to provide aligned optical structures for a completed camera system. Alternatively, an optical wafer is made by aligning a second relief-type diffraction grating fiducial on a first master to a first relief-type diffraction grating fiducial on an optical wafer preform, pressing the first master into a blob to form optical shapes and adhere the blob to the optical wafer preform.

Abstract: The present invention relates to a lead frame for an optical semiconductor device including: a lead frame having a first plate part and a second plate part disposed so as to oppose to the first plate part; an optical semiconductor element placed in the second plate part and electrically connected to the second plate part; a wire for electrically connecting the optical semiconductor element and the first plate part to each other; a circumferential reflector formed on the lead frame so as to surround a circumference of the optical semiconductor element; and a transparent resin for encapsulating the optical semiconductor element, filled in a recess formed by the lead frame and an inner periphery of the reflector, in which the lead frame has a contour shape substantially the same as a bottom contour shape of the inner periphery of the reflector for forming the recess.

Abstract: An optical sensor element is mounted in a package which includes a glass substrate having a cavity, and a glass lid substrate bonded to the other substrate to close the cavity. The glass substrate with the cavity has metalized wiring patterns on front and rear surfaces thereof, and a through hole filled with metal to form a through-electrode interconnecting the wiring patterns on the front and rear surfaces. A metalized wiring pattern on the rear surface of the glass lid substrate is electrically connected to the wiring pattern on the front surface of the other substrate with an adhesive containing conductive particles. The glass lid substrate is made either of glass having a filter function or glass having a light shielding property with an opening therethrough filled with glass having a filter function.

Abstract: A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known contour profile, such as a Rogowski edge profile. Second metallic layers are then formed to line the concavities and come in contact with the first metal layer, to form profiled and metalized encapsulation concavities which mitigate enhancement points at the edges of electrodes matingly seated in the concavities. One or more optical waveguides may also be bonded to the substrate for coupling light into the photo-conductive wafer, with the encapsulation also encapsulating the waveguides.

Abstract: A solar panel is described. The solar panel has at least a support layer and, arranged one on top of the other, a first intermediate layer, at least one solar cell, a second intermediate layer, and a front pane. The solar panel also has a first edge reinforcing layer and a second edge reinforcing layer, at least one terminal housing, and at least two collecting conductors which connect the solar cell to the terminal housing in an electrically conductive manner. The support layer has a portion that projects over the periphery of the front pane. The first edge reinforcing layer is arranged above the peripheral projection and has a cutout. The second edge reinforcement layer is arranged above the first edge reinforcement layer and has an opening. The collecting conductor is located in a cut-out section and in an opening.

Abstract: An image sensor package and image sensor chip capable of being slenderized while enhancing the reliability with respect to physical impact are provided. The image sensor package includes an image sensor chip provided with a pixel domain at a central portion of an upper surface thereof, a substrate disposed at an upper side of the image sensor chip so as to be flip-chip bonded with respect to the image sensor chip, provided with a hole formed at a position corresponding to the pixel domain, and formed of organic material, a printed circuit board at which the substrate provided with the image sensor chip bonded thereto is mounted, and a solder ball configured to electrically connect the substrate to the printed circuit board.

Abstract: A method and apparatus for constructing MEMS devices is provided which employs a low cost molded housing that simultaneously provides precise and accurate alignment, mechanical protection, electrical connections and structural integrity for mounting optical and MEMS components. The package includes a MEMS die mounting surface, an optical component mounting surface and an optical imaging window monolithically fabricated with the MEMS die mounting surface in a predetermined orientation for providing alignment between the MEMS die and optical components. A MEMS adaptor plate is provided to facilitate connections of a MEMS die to external components.

Abstract: An image sensor package includes a crystalline handler having opposing first and second surfaces, and a cavity formed into the first surface. At least one step extends from a sidewall of the cavity, wherein the cavity terminates in an aperture at the second surface. A cover is mounted to the second surface and extends over and covers the aperture. The cover is optically transparent to at least one range of light wavelengths. A sensor chip is disposed in the cavity and mounted to the at least one step. The sensor chip includes a substrate with front and back opposing surfaces, a plurality of photo detectors formed at the front surface, and a plurality of contact pads formed at the front surface which are electrically coupled to the photo detectors.

Abstract: A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al2O3, AlSiOx, TiO2, and an Al2O3/TiO2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiOxNy film.

Abstract: A sensor element is described that includes at least one semiconductor component having a gas-sensitive layer which is attached to a substrate by the flip-chip method, the gas-sensitive layer facing the substrate and a supply arrangement being provided to supply a gas to be examined to the gas-sensitive layer. The semiconductor component is enclosed in a casing. Also described is a method for manufacturing the sensor element, in which a semiconductor component having a gas-sensitive layer is attached by the flip-chip method to a substrate in such a way that the gas-sensitive layer faces the substrate. After that, the casing is applied by a plasma sputtering method, in particular an atmospheric plasma sputtering method. Finally, a use of the sensor element in the exhaust system of an internal combustion engine is also described.

Abstract: A method for producing at least one photosensitive infrared detector by assembling a first electronic component including plural photodiodes sensitive to infrared radiation and a second electronic component including at least one electronic circuit for reading the plurality of photodiodes, an infrared detector, and an assembly for producing such a detector, the method including: production, on each one of the first and second components, of a connection face formed at least partially by a silicon oxide (SiO2)-based layer; bonding the first component and the second component by the connection faces thereof, thus performing the direct bonding of the two components. The method can simplify hybridization of heterogeneous components for producing an infrared detector.

Abstract: A stand-alone device comprising a silicon wafer having its front surface including a first layer of a first conductivity type and a second layer of a second conductivity type forming a photovoltaic cell; first vias crossing the wafer from the rear surface of the first layer and second vias crossing the wafer from the rear surface of the second layer; metallization levels on the rear surface of the wafer, the external level of these metallization levels defining contact pads; an antenna formed in one of the metallization levels; and one or several chips assembled on said pads; the metallization levels being shaped to provide selected interconnects between the different elements of the device.

Abstract: A method of fabricating a light emitting diode device comprises depositing conductive material to cover a portion of surface of a conductive and reflective layer to form a first contact pad, and surfaces between adjacent first trenches to form a second contact pad; and depositing a first passivation layer over uncovered portion of surface of the conductive and reflective layer to form a first planar passivation contact surface between the first contact pad and the second trench and depositing bonding material to cover a portion of surface of the first contact pad, a portion of the second contact pad and a portion of the first planar passivation contact to form a first light emitting diode bonding pad on the first contact pad, a second light emitting diode bonding pad on the second contact pad, and a third light emitting diode bonding pad on the first planar passivation contact.

Abstract: A motion sensing device for sensing infrared rays includes a substrate; an optical module, including a first spacer layer, coupled to the substrate; a first glass layer, formed on the first spacer layer; a second spacer layer, formed on the first glass layer; a second glass layer, formed on the second spacer layer; a third spacer layer, formed on the second glass layer; a first lens, bonding on a first side of the second glass layer; and a second layer, bonding on a second side relative to the first side of the second glass layer; and a coating layer, covered on the optical layer for shielding the infrared rays, wherein the coating layer does not cover the first lens.

Abstract: A compact camera module is coupled at an image sensor end to a flexible printed circuit (FPC) and an FPC extension segment and is configured such that, upon folding the FPC onto the housing, one or more electrical contact pads disposed on the subject side of the optical train are coupled electrically with contact pads on the FPC extension segment from which MEMS actuator control signals are transmittable directly from the FPC to the MEMS lens actuator.

Abstract: A microelectronic unit includes a semiconductor element having a front surface to which a packaging layer is attached, and a rear surface remote from the front surface. The element includes a light detector including a plurality of light detector element arranged in an array disposed adjacent to the front surface and arranged to receive light through the rear surface. The semiconductor element also includes an electrically conductive contact at the front surface connected to the light detector. The conductive contact includes a thin region and a thicker region which is thicker than the thin region. A conductive interconnect extends through the packaging layer to the thin region of the conductive contact, and a portion of the conductive interconnect is exposed at a surface of the microelectronic unit.

Abstract: An electronic device includes a first wiring substrate including a component mounting area, a second wiring substrate stacked on the first wiring substrate, in which an opening portion is provided in a part corresponding to the component mounting area, and connected to the first wiring substrate via solder bumps which are arranged on a periphery of the component mounting area, a frame-like resin dam layer formed between the solder bumps on the periphery of the component mounting area, and surrounding the component mounting area, and an electronic component mounted on the component mounting area of the first wiring substrate, wherein a sealing resin is filled between the first wiring substrate and the second wiring substrate such that the component mounting area is formed as a resin non-forming area by the resin dam layer.

Abstract: In a light emission module (40), a light wavelength conversion ceramic (52) is formed in a sheet shape which converts the wavelength of the light emitted from a semiconductor light emission element (48) when emitting the light. The light wavelength conversion ceramic (52) has a tapered plane (52a) which is inclined to approach the semiconductor light emission element (48) toward the brim portion. The light wavelength conversion ceramic (52) is transparent and is arranged so that the light emission wavelength band after the conversion has an all ray permeability of 40% or above.

Abstract: Some embodiments of the disclosed subject matter include an integrated circuit. The integrated circuit includes a solid state device controller configured to control a plurality of flash memory devices, a first set of input output IO pads, coupled to the solid state device controller, arranged as a first pad ring around a perimeter of the integrated circuit, and a second set of IO pads arranged adjacent to at least one side of the first pad ring, wherein one of the second set of IO pads includes a power source node configured to receive a power supply voltage for the solid state device controller, a ground node, and a bond pad configured to receive an external signal.

Abstract: A sensor device and method of making same that includes a silicon substrate with opposing first and second surfaces, a sensor formed at or in the first surface, a plurality of first contact pads formed at the first surface which are electrically coupled to the sensor, and a plurality of cooling channels formed as first trenches extending into the second surface but not reaching the first surface. The cooling channels instead can be formed on one or more separate substrates that are attached to the silicon substrate for cooling the silicon substrate.

Abstract: An image pickup apparatus includes: an image pickup chip including a light receiving section and electrode pads, on a first main face, and a plurality of connection electrodes, each of which is connected to each of the electrode pads via each of a plurality of through-hole interconnections, on a second main face; a transparent cover glass having a larger plan-view dimension than the image pickup chip; a transparent adhesive layer that bonds the first main face of the image pickup chip and the cover glass; and a sealing member that covers a side face of the image pickup chip and a side face of the adhesive layer, and is made of an insulating material having a same plan-view dimension as the cover glass.

Abstract: The present invention achieves reduction in size and thickness while removing the cause of defective image and the like. According to an image pickup module (1), a solid-state image pickup device (3) and a flexible substrate (2) are connected to each other by flip-chip bonding, and an opening (5) is formed in the flexible substrate 2 by melting the flexible substrate (2) and an anisotropically-conductive film (8) adhered to the flexible substrate (2).

Abstract: A light emitting device includes a base body forming a recess defined by a bottom surface and a side wall thereof, a conductive member whose upper surface being exposed in the recess and whose lower surface forming an outer surface, a protruding portion disposed in the recess, a light emitting element mounted in the recess and electrically connected to the conductive member, and a sealing member disposed in the recess to cover the light emitting element. The base body has a bottom portion and a side wall portion integrally formed of a resin, an inner surface of the side wall portion is the side wall defining the recess and has a curved portion, and the protruding portion is disposed in close vicinity to the curved surface. With this arrangement, a thin and small-sized light emitting device excellent in light extraction efficiency and reliability can be obtained.

Abstract: A device for imaging system warp correction includes an object including an imaging phantom, the object being configured for placement of the imaging phantom adjacent a scanning interface of a detector, and a mounting cap coupled to the object and configured to be secured to the detector to establish the placement of the imaging phantom adjacent the scanning interface of the detector. The mounting cap includes a plurality of alignment features configured to align the object and the mounting cap.

Abstract: A warpage control stiffener ring package includes a substrate having an upper surface and corners. A segmented stiffener ring is formed of “L” shaped segments, each segment being mounted to the upper surface at a corner of the substrate, wherein a gap exists between each of the segments. By forming the segmented stiffener ring of segments having gaps therebetween, warpage of the segmented stiffener ring itself, and thus the thermal stress applied by the segmented stiffener ring on to the substrate, is reduced as compared to a continuous stiffener ring. This allows the segmented stiffener ring to be designed to minimize warpage of the warpage control stiffener ring package.

Abstract: Phosphate-based glass doped with copper ions having infrared blocking filter characteristics is formed into particles and is mixed with a transparent encapsulating resin to encapsulate a semiconductor element. The glass particles have a particle diameter four times or more as large as a wavelength of infrared radiation to be blocked. An optical semiconductor device can be obtained having a stable filter characteristics thereof even if an incident light angle changes and is resistant to moisture.

Abstract: A semiconductor device includes: a sealing resin and a semiconductor element. The sealing resin includes a base resin and a curing agent. The base resin includes isocyanuric acid having an epoxy group. The curing agent includes an acid anhydride having an acid anhydride group. A mole ratio of the acid anhydride group to the epoxy group is not less than 0.67 and not more than 0.8. A semiconductor element is covered with the sealing resin.

Abstract: A semiconductor device has a base substrate having a plurality of metal traces and a plurality of base vias. An opening is formed through the base substrate. At least one die is attached to the first surface of the substrate and positioned over the opening. A cover substrate has a plurality of metal traces. A cavity in the cover substrate forms side wall sections around the cavity. The cover substrate is attached to the base substrate so the at least one die is positioned in the interior of the cavity. Ground planes in the base substrate are coupled to ground planes in the cover substrate to form an RF shield around the at least one die.

Abstract: A camera module including a particle trap. The particle trap may be disposed in the camera module and may be operable to prevent particles from obstructing an optical path defined between a lens assembly and an image sensor. The particle trap may include a particle getter to retain particles in contact with the particle trap. The camera module may be operative to move the lens assembly so as to provide focus on the image sensor for objects at various distances from the camera module. The movement of the lens assembly may be a source of particles retained by the particle trap.

Abstract: A photoelectric conversion apparatus includes: a first semiconductor region forming a part of a photoelectric conversion element; a second semiconductor region stacked on the first semiconductor region, and forming a part of the photoelectric conversion element; a third semiconductor region to which a signal charge transferred from the photoelectric conversion element; a fourth semiconductor region of the first conductivity type having an higher impurity concentration, between the first and third semiconductor region and between the second and third semiconductor regions, closer to a main surface than the first semiconductor region, and connected to the first semiconductor region; a first gate electrode over the fourth semiconductor region, an insulating film on the main surface and between the first gate electrode and the fourth semiconductor region; and a second gate electrode between the third and fourth semiconductor regions, and over the insulating film.

Abstract: An electrical circuit includes a solar cell that has a photovoltaically active front side and a back side. An electronic or micromechanical component is arranged on the back side of the solar cell and is electrically connected to the photovoltaically active front side of the solar cell by a contact-making structure. The electrical circuit also includes a transparent first protective layer that is arranged on the photovoltaically active front side of the solar cell. The contact-making structure has a first contact-making section that is arranged on a front side of the first protective layer facing away from the solar cell.

Abstract: A photovoltaic cell including: (a) a housing including an at least partially transparent cell wall having an interior surface; (b) an electrolyte, containing an iodide based species; (c) a transparent electrically conductive coating disposed on the interior surface; (d) an anode disposed on the conductive coating, the anode including: (i) a porous film containing titania, the porous film adapted to make intimate contact with the iodide based species, and (ii) a dye, absorbed on a surface of the porous film, the dye and the porous film adapted to convert photons to electrons; (e) a cathode disposed on an interior surface of the housing; (f) electrically-conductive metallic wires, disposed within the cell, and electrically contacting the anode and the coating, and (g) a second electrically conductive coating including an inorganic binder and an inorganic electrically conductive filler, the second coating bridging between each of the wires and the transparent coating.

Abstract: A multi-chip package may include an image sensor chip, an image signal processor (ISP) chip, a cover glass, and a package substrate. The ISP chip may be placed on the substrate. The image sensor chip may be placed over the ISP chip. An adhesive film may be formed between the ISP and image sensor chips. A cover glass may be suspended above the image sensor chip. The ISP chip and the image sensor chip may be wire bonded to the substrate. The multi-chip package may be hermetically sealed using a liquid compound or a dam structure. During normal operation, the ISP chip sends control signals to the image sensor chip via a first set of wire bond members and conductive traces in the substrate while the image sensor chip sends output signals to the ISP chip via a second set of wire bond terminals and conductive traces in the substrate.

Abstract: A ceramics substrate for mounting a light-emitting element includes a ceramic sintered body, the ceramic sintered body having a mounting section on which a light-emitting element is mounted, in a surface portion on a mounting section side of the ceramic sintered body, a ratio of crystal grains having a crystal grain size of 0.2 ?m to 1.0 ?m in equivalent circle diameter being in a range of 45% to 80%, a ratio of crystal gains having a crystal grain size of 2.0 ?m to 6.0 ?m in equivalent circle diameter being in a range of 5% to 15%, and a ratio of crystal grains having a crystal grain size of more than 6.0 ?m in equivalent circle diameter being 2.7% or less.

Abstract: A semiconductor device is provided, including a semiconductor substrate that includes a semiconductor; an electrode layer formed above a first surface side inside the semiconductor substrate; a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate; a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween.

Abstract: An optical-electrical converting device includes a printed circuit board (PCB), a light emitting module, a light receiving module, an optical coupling lens, and a locating frame positioned on the PCB. The PCB has two first locating elements. The optical coupling lens includes a first converging lens and a second converging lens. The locating element has two second locating elements. The two first locating elements and the two second locating elements cooperate to position the locating frame on the PCB. The locating element further has two third locating elements. The optical coupling lens has two fourth locating elements. The two third locating elements and the two fourth locating elements cooperate to position the coupling lens on the locating frame, and thus the first converging lens is aligned with the light emitting module, and the second converging lens is aligned with the light receiving module.

Abstract: A wafer level packaging structure for image sensors and a wafer level packaging method for image sensors are provided. The wafer level packaging structure includes: a wafer to be packaged including multiple chip regions and scribe line regions between the chip regions; pads and image sensing regions located on a first surface of the wafer and located in the chip regions; first dike structures covering surfaces of the pads; a packaging cover arranged facing the first surface of the wafer; and second dike structures located on a surface of the packaging cover. Projections of the second dike structures onto the first surface of the wafer are included in the scribe line regions. The packaging cover and the wafer are jointed fixedly via the second dike structures, while tops of the first dike structures and the surface of the packaging cover are contacted.

Abstract: A method of manufacturing an optical apparatus is provided. The method includes arranging a photo device above a substrate with an adhesive located between the photo device and the substrate, forming a bonding member that bonds the substrate and the photo device by curing the adhesive, and arranging, above the photo device, a transparent plate and a sealing member. The sealing member covers the photo device and is located between the transparent plate and the substrate. An elastic modulus of the bonding member is 1 GPa or less.

Abstract: A wafer level packaging structure for image sensors and a wafer level packaging method for image sensors are provided. The wafer level packaging structure includes: a wafer to be packaged including multiple chip regions and scribe line regions between the chip regions; pads and image sensing regions located on a first surface of the wafer and located in the chip regions; first dike structures covering surfaces of the pads and the scribe line regions; a packaging cover arranged facing the first surface of the wafer; and second dike structures located on a surface of the packaging cover. The second dike structures are arranged corresponding to the scribe line regions. The packaging cover and the wafer are jointed fixedly via the second dike structures and the first dike structures.

Abstract: A device having a detector includes a sensor package. The sensor package includes a light sensor, at least one filter located over the light sensor and at least one bond pad. The light sensor is formed on a semiconductor device that provides sensor information related to light incident upon the light sensor. A perimeter of each bond pad is covered by a protective layer forming a sidewall seal. The sensor package also includes a package that encases the light sensor, filter(s) and bond pad(s). Additionally, at least one package pin is communicatively coupled to the bond pad(s). The device also includes a functional circuit that is coupled to the sensor package and receives the sensor information from the light sensor. The device can be an ambient light sensor, camera, backlit mirror, handheld electronic device, filter device, light-to-digital output sensor, gain selection device, proximity sensor, or light-to-voltage non-linear converter.

Abstract: A semiconductor module, having an integrated circuit, a rewiring layer for externally connecting the integrated circuit, and at least one waveguide integrated into the semiconductor module for radar signals having a conductive pattern, which laterally surrounds the interior of the waveguides, the integrated circuit and the at least one waveguide being embedded, at least in regions, in a housing material of the semiconductor module; as well as a radar sensor, a motor vehicle radar system having such a semiconductor module, and a method for producing a semiconductor module.

Abstract: A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction intersecting each other, each of the light-emission elements having a first electrode layer, an organic layer including a luminous layer, and a second electrode layer which are laminated in that order; and a separation section disposed, on the substrate, between the light-emission elements adjacent to each other in the first direction, the separation section having two or more pairs of steps. The first electrode layers in the light-emission elements are separated from each other, and the organic layers as well as the second electrode layers in the light-emission elements adjacent to each other in the first direction are separated from each other by the steps included in the separation section.

Abstract: Bi-directional camera modules and flip chip bonders including the same are provided. The module includes a circuit board on which an upper sensor and a lower sensor are mounted, an upper lens and a lower lens disposed on the upper sensor and under the lower sensor, respectively, and a housing fixing the upper lens and the lower lens spaced apart from the upper sensor and the lower sensor, respectively. The housing surrounds the circuit board. The housing has a plurality of inlets and an outlet through which air flows, and the housing has an air passage connected from the inlets to the outlet via a space between lower lens and the lower sensor.

Abstract: A component assembly including a carrier element including a first contact face and a semiconductor component disposed on the carrier element, wherein the semiconductor component includes a second contact face. The component assembly further includes a contact-making bonding wire, wherein one end of the contact-making bonding wire is connected to the first contact face and a second end of the contact-making bonding wire is connected to the second contact face. The component assembly includes a flow stop bonding wire positioned on the second contact face, wherein the flow stop bonding wire defines on the second contact face a first zone and a second zone. An encapsulation material is applied from the first zone to the first contact face so as to define an encapsulation for the flow stop bonding wire, wherein the flow stop bonding wire prevents an uncontrolled flow of the encapsulation material into the second zone.

Abstract: A method for manufacturing a solid-state imaging device. A solid-state image sensor is mounted on the semiconductor package support and electrically connected to first terminals and second terminals by bonding wires. The second terminals to which the bonding wires are connected are sealed with a sealing member. The optically-transparent member is thereafter disposed on the support member and the sealing member. The sealing member is cured to fix the optically transparent member.

Abstract: The present disclosure relates to a camera module including: an auto focusing module upping and downing a lens; a hand-shaking correction module wrapping the auto focusing module to correct a hand-shaking by horizontally tilting the auto focusing module; a circuit substrate electrically connected to the hand-shaking correction module and the auto focusing module; a bottom case supporting the circuit substrate to be coupled to the auto focusing module; and a main circuit substrate secured to the bottom case to be electrically connected to the image sensor module, wherein the main circuit substrate is formed with oblong symmetrical openings along an edge of the main circuit substrate.