With Means For Increasing Light Absorption (e.g., Redirection Of Unabsorbed Light) Patents (Class 257/436)
  • Patent number: 10297703
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: May 21, 2019
    Assignee: INVISAGE TECHNOLOGIES, INC.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 10181539
    Abstract: A photoelectric conversion element includes a buffer layer, a BSF layer, a base layer, a photoelectric conversion layer, an emitter layer, a window layer, a contact layer, and a p-type electrode sequentially on one surface of a substrate, and includes an n-type electrode on the other surface of the substrate. The photoelectric conversion layer has at least one quantum dot layer. The at least one quantum dot layer includes a quantum dot and a barrier layer. A photoelectric conversion member including the buffer layer, the BSF layer, the base layer, the photoelectric conversion layer, the emitter layer, the window layer, and the contact layer has an edge of incidence that receives light in an oblique direction relative to the growth direction of the quantum dot. A concentrator concentrates sunlight and causes the concentrated sunlight to enter the photoelectric conversion member from the edge of incidence.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: January 15, 2019
    Assignees: SHARP KABUSHIKI KAISHA, THE UNIVERSITY OF TOKYO
    Inventors: Hirofumi Yoshikawa, Makoto Izumi, Yasuhiko Arakawa, Takeo Kageyama
  • Patent number: 10079262
    Abstract: A semiconductor device is disclosed, which includes: at least one device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: September 18, 2018
    Assignee: SEMI CONDUCTOR DEVICES—AN ELBIT SYSTEMS-RAFAEL PARTNERSHIP
    Inventors: Philip Klipstein, Olga Klin, Eliezer Weiss
  • Patent number: 10074677
    Abstract: A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: September 11, 2018
    Assignee: Artilux Inc.
    Inventors: Szu-Lin Cheng, Shu-Lu Chen
  • Patent number: 10038017
    Abstract: A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: July 31, 2018
    Assignee: Artilux Inc.
    Inventors: Szu-Lin Cheng, Shu-Lu Chen
  • Patent number: 10014424
    Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: July 3, 2018
    Assignee: RAYTHEON COMPANY
    Inventors: Edward P. Smith, Borys P. Kolasa, Paul M. Alcorn
  • Patent number: 10014426
    Abstract: To provide a solar cell having improved photoelectric conversion efficiency and a solar cell module. A solar cell (10) is provided with a photoelectric conversion portion (20), a light receiving surface electrode (21a) and a back surface electrode (21b). The light receiving surface electrode (21a) is arranged on the light receiving surface (20a) of the photoelectric conversion portion (20). The back surface electrode (21b) is arranged on the back surface (20b) of the photoelectric conversion portion (20). The back surface electrode (21b) includes metal film (21b1) and an electrical connection electrode (21b2). The metal film (21b1) at least partially covers the back surface (20b). The electrical connection electrode (21b2) is arranged on the metal film (21b1).
    Type: Grant
    Filed: July 24, 2016
    Date of Patent: July 3, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventor: Shigeharu Taira
  • Patent number: 9991676
    Abstract: A small-mode-volume, vertical-cavity, surface-emitting laser (VCSEL). The VCSEL includes an active structure to emit light upon injection of carriers, and two reflecting structures at least one of which is a grating reflector structure. The active structure is disposed within at least one of the reflecting structures. The reflecting structures are configured as a vertical-cavity resonator of small mode-volume. An optical-bus transmitter including a plurality of small-mode-volume VCSELs, and a system including at least one optical bus and at least one optical-bus transmitter in a digital-information processor, or a data-processing center, are also provided.
    Type: Grant
    Filed: October 29, 2010
    Date of Patent: June 5, 2018
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: David A. Fattal, Marco Fiorentino, Jingjing Li, Michael Renne Ty Tan, Wayne V. Sorin
  • Patent number: 9748424
    Abstract: A solar cell according to the embodiment includes a back electrode layer on a support substrate; a first through hole dividing the back electrode layer into a plurality of back electrodes; a first contact pattern in the back electrode layer; a light absorbing layer formed on the back electrode layer and including a second contact pattern on the first contact pattern; and a front electrode layer on the light absorbing layer.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: August 29, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Dong Keun Lee
  • Patent number: 9537056
    Abstract: Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: January 3, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jung Hyeok Bae, Young Kyu Jeong, Kyung Wook Park, Duk Hyun Park
  • Patent number: 9466638
    Abstract: Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.
    Type: Grant
    Filed: October 7, 2014
    Date of Patent: October 11, 2016
    Assignee: TERAPEDE SYSTEMS INC.
    Inventor: Madhukar B. Vora
  • Patent number: 9443755
    Abstract: A method of fabricating a miniaturized semiconductor or other such device takes advantage of a self-reorganization characteristic of an in-situ dissociable diblock copolymer to form a circular via hole that is centrally disposed relative to other device features. In one embodiment, the method is used to form a dual damascene structure. During formation of the dual damascene structure, due to the self-reorganization characteristics of the monomer constituents of the diblock copolymer, the position of the via hole can be ensured to be self aligned with the position of the trench, thus improving the performance and yield of the so formed semiconductor devices, and lowering fabrication costs.
    Type: Grant
    Filed: October 25, 2012
    Date of Patent: September 13, 2016
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Donjiang Wang, Steven Zhang
  • Patent number: 9425340
    Abstract: To provide a solar cell having improved photoelectric conversion efficiency and a solar cell module. A solar cell (10) is provided with a photoelectric conversion portion (20), a light receiving surface electrode (21a) and a back surface electrode (21b). The light receiving surface electrode (21a) is arranged on the light receiving surface (20a) of the photoelectric conversion portion (20). The back surface electrode (21b) is arranged on the back surface (20b) of the photoelectric conversion portion (20). The back surface electrode (21b) includes metal film (21b1) and an electrical connection electrode (21b2). The metal film (21b1) at least partially covers the back surface (20b). The electrical connection electrode (21b2) is arranged on the metal film (21b1).
    Type: Grant
    Filed: June 26, 2013
    Date of Patent: August 23, 2016
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventor: Shigeharu Taira
  • Patent number: 9419159
    Abstract: Prepared is an n? type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n? type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n? type semiconductor substrate 1 is formed on the second principal surface 1b side of the n? type semiconductor substrate 1. After formation of the accumulation layer 11, the n? type semiconductor substrate 1 is subjected to a thermal treatment.
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: August 16, 2016
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Akira Sakamoto, Takashi Iida, Koei Yamamoto, Kazuhisa Yamamura, Terumasa Nagano
  • Patent number: 9392266
    Abstract: A three-dimensional display device includes a display panel and a barrier structure. The barrier structure is located at one side of the display panel. Besides, the barrier structure includes a plurality of barrier patterns and a plurality of transparent slits. The barrier patterns and the transparent slits are arranged alternately. In particular, the barrier patterns include a photoelectric conversion structure.
    Type: Grant
    Filed: June 18, 2012
    Date of Patent: July 12, 2016
    Assignee: Au Optronics Corporation
    Inventors: Wei-Cheng Wu, Kuo-Sen Kung, Chun-Hao Tu, Ren-Hong Jhan, Fang-Hui Chan, Jen-Pei Tseng, Yu-Jung Liu, Jiun-Jye Chang
  • Patent number: 9349769
    Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: May 24, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei Chuang Wu, Jhy-Jyi Sze, Yu-Jen Wang, Yen-Chang Chu, Shyh-Fann Ting, Ching-Chun Wang
  • Patent number: 9312289
    Abstract: A light guide portion includes a low refractive index portion and a high refractive index portion. The low refractive index portion has a refractive index equal to or lower than that of an insulating layer. The high refractive index portion has a refractive index higher than that of the low refractive index portion. The low refractive index portion is located above a separating portion, and is sandwiched by the high refractive index portion in a first direction. A width in the first direction of the low refractive index portion at a first position distant from the separating portion in a second direction is narrower than a width in the first direction of the low refractive index portion at a second position closer to the separating portion than the first position in the second direction.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: April 12, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Echizen, Mineo Shimotsusa
  • Patent number: 9293498
    Abstract: The present disclosure relates to a solid-state imaging element and an electronic device capable of suppressing occurrence of a dark current and acquiring higher image quality. The solid-state imaging element includes a high-concentration diffusion layer configured to serve as a connection portion by which a wiring is connected to a semiconductor substrate, and a junction leak control film formed to cover a surface of the diffusion layer. Also, to connect the wiring to the diffusion layer, a width of an opening formed in an insulation film stacked on the semiconductor substrate is greater than a width of the diffusion layer. Further, in a charge accumulation portion configured to accumulate a charge generated by a photoelectric conversion portion generating the charge according to an amount of received light, the junction leak control film is also used as a capacitor film of the charge accumulation portion.
    Type: Grant
    Filed: December 4, 2012
    Date of Patent: March 22, 2016
    Assignee: SONY CORPORATION
    Inventor: Naoyuki Sato
  • Patent number: 9282268
    Abstract: A solid-state image pickup device includes an array of a first pixel and a second pixel. The second pixel includes a light shielding portion provided above a photoelectric conversion portion thereof and configured to block some of incident light so as to perform focus detection, and a light guiding portion provided at least above an upper face of the light shielding portion.
    Type: Grant
    Filed: October 14, 2013
    Date of Patent: March 8, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Tsutomu Tange, Ginjiro Toyoguchi
  • Patent number: 9269849
    Abstract: A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: February 23, 2016
    Assignee: First Solar, Inc.
    Inventors: San Yu, Veluchamy Palaniappagounder, Pratima Addepalli, Imran Khan
  • Patent number: 9257477
    Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and a light-blocking side wall. The plurality of arrayed pixels each includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is provided for blocking infrared light and formed facing toward a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The light-blocking side wall is formed on a lateral wall of the optical inner filter layer.
    Type: Grant
    Filed: May 13, 2008
    Date of Patent: February 9, 2016
    Assignee: Sony Corporation
    Inventor: Hironori Godaiin
  • Patent number: 9231013
    Abstract: Resonance enhanced color filter arrays are provided for image sensors. Resonance cavities formed with color filter materials that enhance the color filtering capabilities of the color filter materials. Resonance enhanced color filter arrays may be provided for back side illumination image sensors and front side illumination image sensors. A layer of high refractive index material or metamaterial may be provided between a microlens and a color filter material to serve as a first partially reflecting interface for the resonance cavity. An optional layer of high refractive index material or metamaterial may be provided between color filter material and a substrate. In front side illumination image sensors, color filter material may be provided in a light guide structure that extends through interlayer dielectric. The color filter material in the light guide structure may form at least part of a resonance cavity for a resonance enhanced color filter array.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: January 5, 2016
    Assignee: Semiconductor Components Industries, LLC
    Inventor: Victor Lenchenkov
  • Patent number: 9142697
    Abstract: A solar cell includes a substrate of a first conductive type, an emitter region, which is positioned at the substrate and is doped with impurities of a second conductive type opposite the first conductive type, a plurality of first electrodes, which are connected to the emitter region and extend parallel to one another to be spaced apart from one another, a plurality of semiconductor electrodes, which extend in a direction different from an extension direction of the plurality of first electrodes to be spaced apart from one another and have an impurity doping concentration higher than the emitter region, and a second electrode connected to the substrate. A distance between two adjacent semiconductor electrodes is about 0.02 cm to 0.2 cm, and a distance between two adjacent first electrodes is about 0.3 cm to 0.8 cm.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: September 22, 2015
    Assignee: LG ELECTRONICS INC.
    Inventors: Seunghwan Shim, Jinah Kim, Jeongbeom Nam, Indo Chung, Juhong Yang, Ilhyoung Jung, Hyungjin Kwon
  • Patent number: 9112086
    Abstract: To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV.
    Type: Grant
    Filed: October 22, 2012
    Date of Patent: August 18, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Riho Kataishi, Yoshinobu Asami
  • Patent number: 9070817
    Abstract: A photocoupler includes: a light emitting element; a light receiving element; and a bonding layer. The light emitting element includes a semiconductor stacked body, and a first and a second electrode. The semiconductor stacked body includes a light emitting layer. The light receiving element includes a first and a second electrode on a side of a light receiving surface. The bonding layer bonds the light emitting element and the light receiving surface, and has transparency and insulating property.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: June 30, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Fujimoto, Masanobu Iwamoto
  • Publication number: 20150137300
    Abstract: An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.
    Type: Application
    Filed: April 19, 2013
    Publication date: May 21, 2015
    Inventors: Ingo Herrmann, Edda Sommer, Christoph Schelling, Christian Rettig, Mirko Hattass
  • Patent number: 9035410
    Abstract: An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: May 19, 2015
    Assignee: THE BOEING COMPANY
    Inventors: Ping Yuan, Joseph C. Boisvert, Dmitri D. Krut, Rengarajan Sudharsanan
  • Patent number: 9035409
    Abstract: A novel germanium (Ge) photodetector is disclosed, containing a stripe layer including Ge, a substrate supporting the stripe layer, and P and N regions, which are located inside the substrate and near opposite sides of the stripe. The stripe layer containing Ge for light absorption is operated in a slow-light mode by adding combinations of a gradual taper indent structure and a periodic indent structure to reduce light scatterings and to control light group velocity inside the stripe. Due to the slower light traveling velocity inside the stripe, the absorption coefficient of the stripe containing Ge is upgraded to be 1 to 2 orders of magnitude larger than that of a traditional bulk Ge at L band, and so the absorption coefficient reaches more than 1 dB/?m at the wavelength of 1600 nm.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: May 19, 2015
    Assignee: Forelux Inc.
    Inventor: Yun-Chung Na
  • Patent number: 9029970
    Abstract: Provided is a semiconductor light receiving device including: a semiconductor substrate; a semiconductor layer laminated on the semiconductor substrate and including an upper surface portion; a reflecting film formed to cover the upper surface portion of the semiconductor layer and including a principal reflecting region and an upper surface; and an upper electrode formed to cover at least one portion of the upper surface of the reflecting film, and including a junction portion extending through the reflecting file to be provided in contact with the upper surface portion of the semiconductor layer, the junction portion of the upper electrode surrounding a portion of a circumference of the principal reflecting region of the reflecting film, the principal reflecting region being connected to a region of the reflecting film located outside the junction portion, in which the semiconductor light receiving device detects light entering from another side of the semiconductor substrate.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: May 12, 2015
    Assignee: Oclaro Japan, Inc.
    Inventors: Ryu Washino, Yasushi Sakuma, Hiroshi Hamada
  • Patent number: 9029967
    Abstract: A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: May 12, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Mineo Shimotsusa, Masahiro Kobayashi
  • Patent number: 9029926
    Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.
    Type: Grant
    Filed: December 31, 2013
    Date of Patent: May 12, 2015
    Assignee: Sony Corporation
    Inventors: Kazuki Nomoto, Kaneyoshi Takeshita, Hiroyuki Ohri
  • Patent number: 9018728
    Abstract: A semiconductor apparatus includes: a first sheet-like member having a light receiving surface of an imaging device and a first connection terminal disposed thereon, the imaging device generating an image by receiving incident light from a light collecting section for collecting external light disposed thereon; a second sheet-like member having a second connection terminal to be connected to the first connection terminal provided thereon; a conductive bonding portion made of a conductive material and bonded with the first connection terminal; and a bonding wire connecting the conductive bonding portion and the second connection terminal, wherein the bonding wire is disposed along the plane of the first sheet-like member such that reflected light from the bonding wire does not impinge on the light receiving surface.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: April 28, 2015
    Assignee: Sony Corporation
    Inventors: Toshiaki Iwafuchi, Masahiko Shimizu
  • Patent number: 9018726
    Abstract: The photodiode has a p-type doped region (2) and an n-type doped region (3) in a semiconductor body (1), and a pn junction (4) between the p-type doped region and the n-type doped region. The semiconductor body has a cavity (5) such that the pn junction (4) has a distance (d) of at most 30 ?m from the bottom of the cavity (7).
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: April 28, 2015
    Assignee: ams AG
    Inventors: Jochen Kraft, Ingrid Jonak-Auer, Rainer Minixhofer, Jordi Teva, Herbert Truppe
  • Patent number: 8994135
    Abstract: A photodiode array PDA1 is provided with a substrate S wherein a plurality of photodetecting channels CH have an n-type semiconductor layer 32. The photodiode array PDA1 is provided with a p? type semiconductor layer 33 formed on the n-type semiconductor layer 32, resistors 24 provided for the respective photodetecting channels CH and each having one end portion connected to a signal conducting wire 23, and an n-type separating portion 40 formed between the plurality of photodetecting channels CH. The p? type semiconductor layer 33 forms pn junctions at an interface to the n-type semiconductor layer 32 and has a plurality of multiplication regions AM for avalanche multiplication of carriers generated with incidence of detection target light, corresponding to the respective photodetecting channels. An irregular asperity 10 is formed in a surface of the n-type semiconductor layer 32 and the surface is optically exposed.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: March 31, 2015
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kazuhisa Yamamura, Akira Sakamoto, Terumasa Nagano, Yoshitaka Ishikawa, Satoshi Kawai
  • Patent number: 8981510
    Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: March 17, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Keng-Yu Chou, Wen-De Wang, Pao-Tung Chen
  • Publication number: 20150069565
    Abstract: A novel germanium (Ge) photodetector is disclosed, containing a stripe layer including Ge, a substrate supporting the stripe layer, and P and N regions, which are located inside the substrate and near opposite sides of the stripe. The stripe layer containing Ge for light absorption is operated in a slow-light mode by adding combinations of a gradual taper indent structure and a periodic indent structure to reduce light scatterings and to control light group velocity inside the stripe. Due to the slower light traveling velocity inside the stripe, the absorption coefficient of the stripe containing Ge is upgraded to be 1 to 2 orders of magnitude larger than that of a traditional bulk Ge at L band, and so the absorption coefficient reaches more than 1 dB/?m at the wavelength of 1600 nm.
    Type: Application
    Filed: January 17, 2014
    Publication date: March 12, 2015
    Inventor: Yun-Chung Na
  • Patent number: 8975717
    Abstract: A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
    Type: Grant
    Filed: April 14, 2014
    Date of Patent: March 10, 2015
    Assignee: SunPower Corporation
    Inventor: David D. Smith
  • Patent number: 8957491
    Abstract: An optical sensor, according to an embodiment of the present invention, includes a photodetector region and a plurality of slats over the photodetector region. In an embodiment, the slats are made up of a plurality of metal layers connected in a stacked configuration with a plurality of metal columns. The metal columns can be made of metal vias, metal contacts and/or metal plugs. In an embodiment, the slats are angled relative to a surface of the photodetector region, wherein the angling of the slats is achieved by the metal layers being laterally offset relative to one another and/or metal columns being laterally offset relative to one another. In an alternative embodiment, the slats are made of an opaque polymer material, such as an opaque photoresist.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: February 17, 2015
    Assignee: Intersil Americas LLC
    Inventor: Francois Hebert
  • Patent number: 8957490
    Abstract: Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: February 17, 2015
    Assignee: Infineon Technologies Dresden GmbH
    Inventor: Thoralf Kautzsch
  • Patent number: 8948561
    Abstract: A waveguide is provided on which an electromagnetic wave impinges, the electromagnetic wave having a wavelength ? included in a given interval ?? of interest centered on a ?centr. The waveguide comprises a film defining a surface on a plane on which the electromagnetic waves are apt to impinge, having a thickness in a direction substantially perpendicular to the surface, the film being realized in a material having a first refractive index; a plurality of scatterers being randomly distributed in two directions in at least a portion of the surface of the film, the scatterers having a substantially constant cross section along said substantially perpendicular direction. The scatterers are realized in a material having a second refractive index lower than the first refractive index, wherein the wavelength of the incident electromagnetic waves is comprised between 0.
    Type: Grant
    Filed: September 2, 2010
    Date of Patent: February 3, 2015
    Assignee: CNR—Consiglio Nazionale Delle Ricerche
    Inventors: Diederik Sybolt Wiersma, Francesco Riboli, Kevin Vynck, Matteo Burresi
  • Patent number: 8946758
    Abstract: An organic light emitting display device includes a substrate having a luminescent region and a non-luminescent region, an insulation layer on the substrate, a first electrode on the insulation layer, at least one light emitting structure on the first electrode, a second electrode on the light emitting structure, and at least one reflecting structure at one of the first electrode or the second electrode around the at least one light emitting structure. The reflecting structure may be configured to reflect light back toward the luminescent region.
    Type: Grant
    Filed: March 27, 2012
    Date of Patent: February 3, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Joon-Gu Lee, Won-Jong Kim, Ji-Young Choung, Jin-Baek Choi, Yeon-Hwa Lee, Young-Woo Song, Jong-Hyuk Lee
  • Patent number: 8941203
    Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: January 27, 2015
    Assignee: Raytheon Company
    Inventors: Justin Gordon Adams Wehner, Edward Peter Gordon Smith
  • Patent number: 8940573
    Abstract: A method of manufacturing a semiconductor light-receiving element includes: forming a semiconductor layer structure having a one-conductivity-type semiconductor layer having a first conduction type located on a side of light incidence, an opposite-conductivity-type semiconductor layer having a second conduction type opposite to the first conduction type, and a light-absorbing layer between the one-conductivity-type semiconductor layer and the opposite-conductivity type semiconductor layer, the opposite-conductivity-type semiconductor layer having a structure in which a first semiconductor layer comprised of a binary mixed crystal, a second semiconductor layer comprised of a three-or-more-element mixed crystal, and a third semiconductor layer comprised of a three-or-more-element mixed crystal having an energy gap smaller than that of the second semiconductor layer are laminated in this order from the light incidence side; forming a metal film that is in contact with the third semiconductor layer; and performin
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: January 27, 2015
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Yuji Koyama
  • Patent number: 8937363
    Abstract: A solid-state imaging device includes a photoelectric conversion film which is interposed between two transparent electrodes outside a semiconductor substrate, wherein a film surface of the photoelectric conversion film is provided so as to incline with respect to a front surface of the semiconductor substrate.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: January 20, 2015
    Assignee: Sony Corporation
    Inventors: Masashi Nakazawa, Tomoyuki Hirano
  • Patent number: 8933525
    Abstract: The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.
    Type: Grant
    Filed: May 31, 2010
    Date of Patent: January 13, 2015
    Assignee: Q-Cells SE
    Inventors: Peter Engelhart, Robert Seguin, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
  • Publication number: 20150001665
    Abstract: Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art.
    Type: Application
    Filed: June 28, 2013
    Publication date: January 1, 2015
    Inventor: Thoralf Kautzsch
  • Patent number: 8921964
    Abstract: An image sensor for low light cameras including a plurality of image pixels, each including: a photodiode layer; an oxide layer; a metal layer; a first microlens layer for focusing an incident light onto the photodiode layer; and a second microlens layer formed on top of the first microlens layer for generating a collimated light from a sharp-angled light from a low light camera and illuminating said collimated light to the first microlens layer to be focused on the photodiode layer.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: December 30, 2014
    Assignee: Arecont Vision, LLC.
    Inventor: Sri Rama Prasanna Pavani
  • Patent number: 8912616
    Abstract: A photodiode device including a photosensitive diffusion junction within a single layer. The photodiode device further includes a resonant grating located within the single layer. The photosensitive diffusion junction is located within the resonant grating.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: December 16, 2014
    Assignee: International Business Machines Corporaion
    Inventors: Matthias Fertig, Thomas Morf, Nkolaj Moll, Martin Kreissig, Karl-Heinz Brenner, Maximilian Auer
  • Patent number: 8901696
    Abstract: A solid-state imaging device includes: photoelectric conversion units disposed in the form of matrix in an imaging region and a peripheral region around the imaging region; transfer electrodes provided on a side of the photoelectric conversion units arranged in the vertical direction of the matrix; and first-layer wirings and second-layer wirings in a multi-layer wiring structure disposed to connect the transfer electrodes in the horizontal direction of the matrix, wherein the first-layer wirings and the second-layer wirings are provided as light-shielding patterns for covering the photoelectric conversion units in the peripheral region.
    Type: Grant
    Filed: August 9, 2011
    Date of Patent: December 2, 2014
    Assignee: Sony Corporation
    Inventors: Masashi Takami, Ryoma Yoshinaga, Akira Furukawa
  • Patent number: 8889464
    Abstract: A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.
    Type: Grant
    Filed: May 9, 2013
    Date of Patent: November 18, 2014
    Assignee: LG Electronics Inc.
    Inventors: Mann Yi, Jeonghyo Kwon, Seongeun Lee, Taeyoung Kwon