Abstract: Semiconductor power devices with improved electrical characteristics are disclosed including rectifying contacts on a specially prepared semiconductor surface with little or no additional exposure to other chemical treatments, with oxide passivation and edge termination at a face of the semiconductor substrate adjacent to and surrounding the power device. The edge termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize a portion of the substrate face and preferably self-aligned to the device. The passivated, edge-terminated devices exhibit improved characteristics relative to passivated devices with characteristics approaching those of the native semiconductor with the additional advantages of passivation protection. Methods for making and using the devices are also disclosed.

Abstract: Visible-blind UV detectors are disclosed comprising an active layer of ZnSTe alloy. The Te composition can be varied to provide good lattice matching depending on the nature of the substrate (eg Si, GaP or GaAs) and a novel structure is provided to give high quantum efficiency. The invention also discloses UV detectors with an active layer of pure ZnS and with an active layer of ZnSSe.

Abstract: In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate.

Abstract: A semiconductor imaging device is disclosed. The device includes a substrate having at least first and second surfaces opposing each other, and a circuit layer. The substrate is doped to exhibit a first conductivity type. The substrate includes a conducting layer, a region, and a plurality of doped regions. The conducting layer includes a first type dopants incorporated near the first surface. The region includes a heavily doped area within the substrate near the second surface. The plurality of doped regions includes a second type dopants formed on the second surface. The circuit layer is formed over the second surface to provide gate contacts to and readout circuits for the plurality of doped regions. The readout circuit provides readout of optical signals from pixels.

Abstract: A voltage-controlled, wavelenght-selective photodetector includes comprising a double diode having a counter-polarized Si-Schottky diode and a SiGe PIN diode. The short-wave portion (&lgr;<0.9 &mgr;m) of the light entering the detector through a window generates electron-hole pairs in the Si-Schottky diode, while the longer-wave portion (1 &mgr;m<&lgr;<2 &mgr;m) passes through the substrate and is absorbed in the epitaxially deposited SiGe superlattice or the quantum well diode. The photocurrents of both detectors flow in physically opposite directions and subtract from each other, resulting in a wavelength-dependent operational sign of the photocurrent. The level of the bias voltage applied determines whether the photocurrent of the Si-Schottky diode or the photocurrent of the Si/Ge PIN diode determines the spectrum.

Abstract: A circuit includes a substrate having a dielectric layer with a first surface and a second surface. A conductive layer is formed on the first surface. A beveled via is formed in a dielectric layer of the substrate. The via has a first opening of a first width in the first surface, and a second opening of a second width in the second surface, the second width being greater than the first width. A conductive plug is connected to the conductive layer. The plug is formed in the via and extends from adjacent the first opening toward the second opening, and terminates adjacent the second opening at a plug interface surface. A conductive solder ball is connected to the plug interface surface and extends to protrude from the second surface.

Abstract: A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer has a high enough barrier for the cold side to only allow “hot” electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level of the anode, they lose energy to the lattice, thus heating the lattice at the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.

Abstract: A solar cell includes a substrate carrier for current generating photoactive layers that include at least one front layer and one layer toward the substrate of different polarities, a front contact, at least one back contact and an integral protective diode which has a polarity opposite the solar cell integrated in and disposed on a front side of the solar cell and including at least one diode semiconductor layer. A tunnel diode extends between the photoactive layers and a region of the substrate toward the front, the tunnel diode being recessed adjacent the protective diode. The region of the substrate toward the front, or a layer toward the front applied to or formed by the front, together with a photoactive layer of corresponding polarity toward the front, make up the at least one diode semiconductor layer of the protective diode.

Abstract: A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

Abstract: A bumped semiconductor device contact structure is disclosed including at least one non-planar contact pad having a plurality of projections extending therefrom for contacting at least one solder ball of a bumped integrated circuit (IC) device, such as a bumped die and a bumped packaged IC device. The projections are arranged to make electrical contact with the solder balls of a bumped IC device without substantially deforming the solder ball. Accordingly, reflow of solder balls to reform the solder balls is not necessary with the contact pad of the present invention. Such a contact pad may be provided on various testing equipment such as probes and the like and may be used for both temporary and permanent connections. Also disclosed is an improved method of forming the contact pads by etching and deposition.

Abstract: An electrode structure of an HIP infrared detector. A HIP infrared comprises a p-type silicon substrate which has an exposed guard ring, an exposed region of the silicon substrate encompassed by the guard ring, and a silicon oxide layer covering a part of the guard ring and the silicon substrate. On the silicon substrate, a photosensitive alloy layer comprises an amorphous photosensitive alloy layer on the silicon oxide layer, and a single crystalline photosensitive alloy layer on both the part of the silicon substrate encompassed by the guard ring and the guard ring. An electrode to electrically connects the silicon substrate via the photosensitive alloy layer. Moreover, the HIP infrared further comprises a p+ Ohmic contact in the silicon substrate and another electrode to contact with the p+ Ohmic contact.

Abstract: A method of manufacturing a PIN (positive-intrinsic-negative) diode structure includes depositing an insulation or dielectric layer over the bottom PIN diode electrodes, prior to depositing the PIN semiconductor layers. The insulation layer results in a PIN diode structure with reduced leakage current, reduced RIE (reactive ion etching) chamber contamination, the reduction or elimination of post RIE processing, improved yields, and/or expands the potential materials that may be used for the bottom electrode. A corresponding PIN diode structure is also disclosed. The resulting PIN diode structures may be used in, for example, LCD (liquid crystal display) and solid state imager applications.

Abstract: A near-field scanning optical microscope uses short-circuit current or open-circuit voltage signals from a photosensor to generate and display an image of an object. The photosensor includes two pairs of Schottky-barrier contacts positioned on the photosensor's semiconductor surface along two orthogonal axes. Together the contact pairs define a gap, within which the object to be viewed is placed. When the microscope scans a beam of light over the gap, the photosensor produces two signals, each of which indicates the position of the light beam between one of the contact pairs. The microscope includes a computer that receives the signals from the photosensor during two scans, one conducted without the object on the surface of the photosensor (the “background” scan), and the other conducted with the object in place (the “object” scan).

Abstract: Tin oxide nanoparticles were produced with tin in a variety of oxidation states. In particular, nanoparticles of single phase, crystalline SnO2 were produced. Preferred tin oxide nanoparticles have an average diameter from about 5 nm to about 100 nm with an extremely narrow distribution of particle diameters. The tin oxide nanoparticles can be produced in significant quantities using a laser pyrolysis apparatus. Nanoparticles produced by laser pyrolysis can be subjected to further processing to change the properties of the particles without destroying the nanoscale size of the particles. The nanoscale tin oxide particles are useful for the production of transparent electrodes for use in flat panel displays.

Abstract: A photosensitive element may be formed by an upper layer which is sensitive to visible light and a lower layer which is sensitive to infrared radiation. By making the upper device infrared transparent, the upper device can detect visible light while the lower device detects infrared radiation in one single detector. In some embodiments a plurality of pixels may be provided, only some of which contain both the first and second layers.

Abstract: A metal-semiconductor-metal photodetector including an absorbent layer, a barrier layer of greater forbidden band energy on which there are deposited Schottky electrodes and a transition layer of graded composition, the photodetector including a doping plane situated in the vicinity of the join between the absorbent layer and the transition layer of graded composition.

Abstract: The invention concerns the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n.sup.- /n.sup.+ -GaN and AlGaN structures grown over sapphire substrates. Mesa geometry devices of different active areas were fabricated and characterized for spectral responsitivity, speed and noise characteristics. The invention also concerns the fabrication and characterization of an 8.times.8 Schottky barrier photodiode array on GaN with a pixel size of 200 .mu.m by 200 .mu.m.

Abstract: A composite-layer semiconductor device includes a gate above a host substrate, an n++ contact layer above the gate, and source and drain ohmic contacts applied to the n++ contact layer. The source and drain ohmic contacts define a central gate location which is recessed through the n++ contact layer toward the gate. The source and drain ohmic contacts create a barrier to chemical etching so that a current path below the central gate location can be incrementally recessed in repeated steps to precisely tailor the operating mode of the device for depletion or enhancement applications. The composite-layer semiconductor device is fabricated by depositing a gate on an n++ contact layer above a semi-insulating substrate. The semi-insulating substrate and gate are flipped onto an epoxy layer on the host substrate so that the gate is secured to the epoxy layer and the semi-insulating substrate presents an exposed backside. A portion of the exposed backside is removed.

Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.

Abstract: A compound semiconductor transistor has a structure in which a first insulating film is formed only under a overhang of a gate electrode an upper part of which is formed widely, and a second insulating film for threshold voltage adjustment is formed on the side of a gate electrode and the first insulating film.

Abstract: A structure for providing direct feedback of power emitted by a surface emitting light emitting device and the subsequent optical power control of the device is disclosed. In a preferred embodiment, an array of vertical cavity surface emitting lasers emit light having a wavelength which is partially detected by an array of photodetectors. The semi-transparent photodetectors array has an absorption coefficient which is relatively small at the wavelength of light emitted by the lasers. Most of the emitted light will be transmitted through the detectors while a small insignificant fraction in magnitude is absorbed and converted to photocurrent for monitoring the output power of the devices. The structure of the device of the present disclosure is simple, readily fabricated through uncomplicated techniques and of materials which do not effect the beam characteristics of the surface emitting devices.

Abstract: An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the same integrated circuit. For this optical-electronic integrated circuit, the photo detection circuit is made by a metal-semiconductor-metal process. A current is generated when the photo detection circuit is impinged by photons.

Abstract: In a IR detector and a fabrication method thereof, the IR detector has a insulating thin film (3) made up of insulating material, many semiconductor layers (1) each having an island shape formed on the insulating thin film (3), a forward bias connection section (5) and a backward bias connection section (6) formed for each semiconductor layer (1) to be forward and backward biases to an external bias voltage, and a metal thin film (2) for electrically connecting the semiconductor layers (1) to each other through both the forward bias connection section and the backward bias connection section (5 and 6).

Abstract: A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer has a high enough barrier for the cold side to only allow "hot" electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level of the anode, they lose energy to the lattice, thus heating the lattice at the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.

Abstract: The invention relates to a photo sensitive electronic component based on amorphous silicon and its alloys, comprising two, in respect to each other antiserially arranged, p-i-n or n-i-p or Schottky-contact structures, in which in each case the active layers are arranged in the normal way in the direction of light incidence, whereby in the area of the first structure in the direction of light incidence, the charge carriers generated by blue light are collected for a first (V1) voltage; and in the area of the second structure in the direction of light incidence, the charge carriers generated by red or green light are collected for a second (V2) or a third (V3) voltage, and whereby at least one of the two intrinsically conducting layers is constructed from two partial layers. The object of creating better spectral selectivity is achieved in that in the partial layer (I) which is in front in the direction of light incidence, a higher product from charge carrier mobility and life-time (.mu.

Abstract: A wafer layout for a multi-channel device for improving the yield of operative devices comprises a semiconductor wafer and a plurality of semiconductor devices formed in the semiconductor wafer, each device comprising a consecutive series of impurity regions formed in the semiconductor wafer, the impurity regions being arranged consecutively without separation between the respective semiconductor devices, such that each of the semiconductor devices is indistinguishable from the others, without regard to defective devices, and a single semiconductor device comprising a plurality of consecutive impurity regions formed in the semiconductor wafer may be cut from the wafer by cutting therefrom any of the plurality of consecutive impurity regions formed therein. The invention is particularly useful for the fabrication of strip diodes and the like.

Abstract: A surface emitting semiconductor laser device is disclosed which comprises a substrate, a pair of reflector stacks for light-reflecting disposed above the substrate, surface emitting laser means having a quantum well area disposed between the pair of reflector stacks, a photodiode for monitoring/modulating a laser beam, and contacting means for ohmically contacting the surface emitting laser means and photodiode, wherein the pair of reflector stacks and the quantum well area between the stacks are deposited on the center of the substrate to form a mesa-type ridge structure, and a predetermined metal layer for constituting the photodiode is formed on both portions of the substrate beside a lower side of the mesa-type ridge structure. A fabricating process thereof can be simplified by forming the metal layer on the upper side of the device only with one-time metal depositing process.

Abstract: A solid-state infrared sensor using a Schottky barrier diode. The sensor has a first layer of a semiconductor of a first conductivity type and a second layer of a metal or a metal silicide and the first and second layer are joined to each other to form the Schottky barrier diode. Further, the sensor includes a third layer disposed in the depletion layer formed in the first layer out of contact with the Schottky junction interface. The third layer contains an impurity which is introduced for positioning an effective barrier formed in the depletion layer under an image force, closely to the junction interface. Intensity of an infrared radiation is detected using a multiple reflection effect of hot carriers.

Abstract: A metal-semiconductor-metal (MSM) photodetector, specifically a new, improved low noise device is disclosed. The disclosed device is a MSM photodiode in which the cathode and anode are made of different materials with optimal Schottky barrier heights. One of these materials is chosen to provide a high ratio of Schottky barrier height to hole transport and the other to provide a high ratio of Schottky barrier height to electron transport. The disclosed MSM photodetector is designed to allow each Schottky barrier to be individually optimized to the point that a wide bandgap Schottky barrier enhancement layer and its associated heterointerface may become unnecessary. Elimination of the charge buildup at the heterointerface enhances carrier extraction resulting in photodetectors with elevated quantum efficiency and enhanced bandwidths.

Abstract: A pad for providing an electrical connection to a liquid crystal display (LCD) includes a first indium tin oxide (ITO) layer provided on a surface of an insulative substrate. At least one metal layer is provided on the first ITO layer and a second ITO layer, in turn, is disposed on the metal layer so that the metal layer is effectively embedded in ITO material. The metal layer is thus shielded from humidity effects and the resulting pad has improved conductivity and reduced signal propagation delay. A recessed portion may be provided in a top surface of the pad so that a spherical conductor spreading during a subsequent bonding process is prevented. The metal layer may be fabricated in the same step that the gate layer of a TFT is formed, and the second ITO layer may be formed concurrently with a pixel electrode of the LCD.

Abstract: A photoresponsive material comprises molecular or polymeric semiconductors in which photogeneration of separated charge carriers proceeds substantially via an intermediate stage of a triplet exciton, where the generation of the triplet exciton may be facilitated by the presence of elements of high atomic number, and in which the generation of separated charges from the intermediate triplet excited states is facilitated by the presence of at least two semiconductive components, one of which is of high electron affinity and able to accept electrons, and the other of which is of low ionisation potential and therefore able to accept positive charge carriers, the difference between the electron affinity of the former and the ionisation potential of the latter being sufficiently low so as to allow the ionisation of a triplet exciton which is present on either of the two aforementioned semiconductive components or on a third component.

Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Abstract: Efficiency of a photoelectric conversion device is increased by inducing a surface plasmon also on a metallic electrode located on the side of the device where light is incident. Incident He-Ne laser light is refracted by a semicylindrical lens and is incident on a magnesium fluoride layer and an Al electrode. The surface plasmon is absorbed by a copper phthalocyanine layer to give a photoelectric current between the Al electrode and an Ag electrode.

Abstract: A vertical structure Schottky contact photodiode has a narrow bandgap InGaAs light absorbing layer cladded front and back with InAlAs current blocking layers having metal contacts formed thereon. As compared to single-side MSM photodiodes, with interdigitated electrodes lying in a single plane, response time is improved due to reduced spacing between the electrodes. Response time is also improved since capacitance is reduced due to inherently low doping levels in the semiconductor material. Laterally offset finger electrodes are made light reflective to increase the production of carriers in the InGaAs absorption layer.

Abstract: Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+ doping spike and the Schottky image force. The p+ doping spikes were grown by molecular beam epitaxy at 450 degrees Celsius using elemental boron as the dopant source, with doping concentrations ranging from 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+ spikes.

Abstract: An optoelectronic device based on a conduction constriction through which charge carriers pass ballistically. The constriction has a cross-sectional area of 2 square microns or less and a thickness D and is made of doped semiconductor material with a carrier mobility .mu.. The thickness D is selected to be near to a characteristic path length D.sub.mes defined by D.sup.2.sub.mes =(h/2e)*.mu. where h is Planck's constant and e the elementary charge. The device can be used as a heterodyne radiation detector for detecting radiation in the frequency range between 3 GHz and 3 THz and is capable of detecting signals with a power of less than 10.sup.-14 watts in room temperature operation. The device can also be operated as the front end of a spectrometer. Other applications of the device include use as a high frequency AC current source or oscillator for microelectronics, for instance in the 100 to 500 GHz range.

Abstract: A photovoltaic element produced from a product resulting from decomposition of a silicon polymer having an organic substituent of the group consisting of a hydrocarbon group, a halogenated hydrocarbon group, and a silyl group R.sup.3 R.sup.4 R.sup.5 Si- (wherein R.sup.3 -R.sup.5 each are identical or different, including C.sub.1 -C.sub.8 alkyl groups and C.sub.6 -C.sub.10 aryl groups). The inventive photovoltaic element is substantially pollution-free and capable of quantity production at a relatively large unit size.

Abstract: Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance.

Abstract: Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance.

Abstract: A photovoltaic cell comprising a plurality of film layers, at least one of the layers being a semiconductor film of amorphous, hydrogenated carbon. The preferred embodiment comprises a plurality of semiconductor films sandwiched together in layers, every three layers forming a PIN junction. All films are made of amorphous, hydrogenated carbon and vary only by dopant levels within each PIN junction. There are variations in bandgap from one PIN junction to the next in order that the photovoltaic effect in each PIN junction will be caused by a different portion of the spectrum of light.

Abstract: An optical FET includes one or more light-responsive diodes stacked on the gate. Each diode includes a planar (horizontal) junction. The number of diodes is chosen to achieve a desired gate to source potential difference. An electrical connection connects the diode(s) to the source of the FET.

Abstract: Silicon-VLSI-compatible photodetectors, in the form of a metal-semiconductor-metal photodetector (MSM-PD) or a lateral p-i-n photodetector (LPIN-PD), are disclosed embodying interdigitated metallic electrodes on a silicon surface. The electrodes of the MSM-PD have a moderate to high electron and hole barrier height to silicon, for forming the Schottky barriers, and are fabricated so as to be recessed in the surface semiconducting layer of silicon through the use of self-aligned metallization either by selective deposition or by selective reaction and etching, in a manner similar to the SALICIDE concept. Fabrication is begun by coating the exposed Si surface of a substrate with a transparent oxide film, such that the Si/oxide interface exhibits low surface recombination velocity.

Abstract: A spatial light modulation device, in which at least a photoconductor structure and a light modulator have a multilayer structure. In this spatial light modulation device, the photoconductor structure has a plurality of pixel portions and avalanche multiplication of charges generated by light incident on each of the pixel portions is performed therein and charges obtained as a result of the avalanche multiplication are stored in the pixel portions. Thus, this spatial light modulation device has high sensibility.

Abstract: A monolithic opto-coupler employing silicon-insulator technology in which at least two p-type silicon islands disposed on said insulating layer and a light emitting diode having enhanced light emitting efficiency is formed on one of said islands. The enhanced light emitting diode is either of the type having the surface of said p-type silicon island being electrochemically etched to provide a porous silicon layer, having carbon implanted in damaged silicon, or having an amorphous silicon-carbide layer. A silicon diode detector is formed on the other island(s) and a reflective layer is disposed over the light-emitting diode and the detectors for coupling light generated in the light emitting diode to the silicon diode detector.

Abstract: A metal-semiconductor-metal (MSM) photodetector in a silicon substrate. An insulating layer overlies the silicon substrate. An active layer is carried on the insulating layer and is separated from the silicon substrate. The active layer has an active layer thickness. Interdigitated fingers are carried on the active layer. The interdigitated fingers develop a potential therebetween related to incident radiation. Spacing between the interdigitated fingers is related to thickness of the active layer.

Abstract: A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a Schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydrogenated amorphous silicon film.

Abstract: An electron wave interference device includes a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, channel means for propagating electrons from the source electrode to the drain electrode and a gate electrode provided on a halfway portion of the channel means between the source electrode and the drain electrode for dividing the channel means into plural channels solely in the halfway portion of the channel means. A positional relationship between the channel means and the gate electrode is set so that a depletion layer is extended under the gate electrode toward the channel means by applying a given voltage to the gate electrode. The depletion layer extended through the channel means forms an island which inhibits the propagation of electrons in the channel means and thus divides the channel means into the plural channels.

Abstract: A light emitting diode including a carrier injection layer of semiconductor material, such as diamond, and a light emitting layer of electroluminescent organic material, such as PPV, positioned to form a diode junction therebetween. The semiconductor material being selected to have a wider bandgap than the organic material and the materials being further selected to minimize the discontinuities at the junction which would cause energy spikes.

Abstract: An electromagnetic wave detector comprises a stack of quantum wells included between an ohmic contact and a rectifier junction which may be a barrier (Al.sub.y Ga.sub.1-y As) with a forbidden band width that is greater than that of the barriers of the quantum wells.

Abstract: A method and structure are provided for internal photoemission detection. At least one groove (30a) is formed in a side of a semiconductor layer (32). A silicide film (58) is formed in each groove (30a) over the semiconductor layer (32). A metal contact region (44) is electrically coupled to the silicide film (58) such that a voltage at the metal contact region (44) indicates an intensity of radiation incident on the structure (28).